CN205139762U - Linear difference hall voltage generator of tiling structure - Google Patents
Linear difference hall voltage generator of tiling structure Download PDFInfo
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- CN205139762U CN205139762U CN201521004024.0U CN201521004024U CN205139762U CN 205139762 U CN205139762 U CN 205139762U CN 201521004024 U CN201521004024 U CN 201521004024U CN 205139762 U CN205139762 U CN 205139762U
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- hall
- voltage generator
- semiconductor chip
- voltage
- differential amplifier
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Abstract
The utility model relates to a linear difference hall voltage generator of tiling structure, its first hall semiconductor wafer and second hall semiconductor wafer who just tightly faces on the base plate including the tiling, two semiconductor wafer's specification and electricity nature homogeneous phase are same, first hall semiconductor wafer and second hall semiconductor wafer are reverse to concatenate in constant current source power supply loop, a difference amplifier is connected to first hall semiconductor wafer's voltage output end, the 2nd difference amplifier is connected to second hall semiconductor wafer's voltage output end, a difference amplifier's output and the 2nd difference amplifier's output are connected to the 3rd difference amplifier. The utility model has the advantages of circuit structure is simple, convenient to use, the system is stable and measurement accuracy is high.
Description
Technical field
The utility model relates to Hall element field, specifically a kind of linear differential Hall voltage generator of tile arrangement.
Background technology
Current sensor generally adopts ferromagnet and linear hall element to design, and because the voltage of influence of temperature change Hall element exports, current sensor needs to carry out complicated temperature compensation and linearity correction.The method of indemnifying measure and linearity correction is a lot, is summed up and is roughly divided into the compensation of circuit compensation, software compensation and multi-sensor fusion technology.Though these technical methods to a certain degree improve stability and the measuring accuracy of sensor, implementation method is complicated, and cost is high, precision is low, and the self-characteristic not making full use of Hall element realizes self compensation and corrects.
Circuit compensation technology generally uses temperature sensor sampling environment temperature, carries out temperature compensation and linearity correction by signal processing circuit.For dissimilar semiconductor devices, temperature characterisitic is difficult to ensure consistance, may cause undercompensation or over-compensation, although improve the measuring accuracy of sensor, have also been introduced the undesired signal irrelevant with tested electric current simultaneously.
Software compensation method carries out temperature compensation and linearity correction by application software to sensor, eliminate circuit compensation, but software compensation is pointed, higher to the coherence request of current sensor, is difficult to ensure unification.Sensor itself does not have a compensate function, does not have a versatility.
Multi-sensor fusion technology penalty method is more complicated, by current sensor and temperature sensor associated working, obtains electric current and temperature information, carries out numerical value fusion, revise in real time and be compensated measurement data by application software; Also there is the shortcoming of software compensation.
In sum, these compensation methodes are complicated and be difficult to ensure measuring accuracy, document " complementary combinations of linear hall element and differential type application thereof; instrument and meter for automation 2010.04 " proposes the differential applications technology of linear hall element, differential technique is utilized effectively to inhibit temperature drift and common mode interference, patent CN200920028862.X utilizes a kind of differential Hall unit of this this technical design, simplifies the indemnifying measure of current sensor; Inventor and by this component design patent CN200920239770.6 differential Hall current sensor, significantly improve the performance of sensor.Analyze and find, what this assembly adopted is overlay structure, and the size of assembly is two Hall element thickness, when designing for current sensor, ferromagnetic air gap must be caused to strengthen, cause magnetic resistance to increase, and reduces the sensitivity of current sensor.Therefore, the utility model designs a kind of linear differential Hall voltage generator of tile arrangement, temperature drift and common mode interference can not only be suppressed from signal source, ferromagnetic air gap can also be reduced, be conducive to the linearity of raising current sensor, sensitivity and measuring accuracy, simplification is compensated and corrective action, optimal design, to reduce costs, all there is important using value.
Utility model content
The technical problems to be solved in the utility model is to provide that a kind of circuit structure is simple, easy to use, system stability and the linear differential Hall voltage generator of the high tile arrangement of measuring accuracy.
For solving the problems of the technologies described above, the design feature of the linear differential Hall voltage generator of tile arrangement of the present utility model comprises being laid on substrate and the first Hall semiconductor chip be close to and the second Hall semiconductor chip, the specification of two semiconductor chips is all identical with electrical properties, first Hall semiconductor chip and the second Hall semiconductor chip are oppositely serially connected in constant current source power supply loop, the voltage output end of the first Hall semiconductor chip connects the first differential amplifier, the voltage output end of the second Hall semiconductor chip connects the second differential amplifier, the output terminal of the first differential amplifier and the output terminal of the second differential amplifier are connected to the 3rd differential amplifier.
Voltage generator housing is provided with the positive power terminal be connected with positive supply, the negative power source terminal be connected with negative supply, ground terminal and voltage generator lead-out terminal; Described constant current source power supply loop is formed by positive supply ground connection after constant current source, and three differential amplifiers drive by positive supply and negative supply, and voltage generator lead-out terminal is drawn by the output terminal of the 3rd differential amplifier.
Two semiconductor chips are rectangular sheet, and two rectangular sheets are positioned at same plane and size is identical with thickness, the spacing≤1mm at two rectangular sheet edges.
The beneficial effects of the utility model are: two Hall semiconductor chips are oppositely connected in series, its working current is identical, direction is contrary, the output polarity of its two Hall voltage generators formed is contrary, output voltage has difference mode signal feature, after amplifying, ask poor mode output signal voltage with voltage, there is Differential Characteristics.Output due to voltage generator has difference output feature, voltage generator self can suppress common-mode signal and temperature drift, there is the feature of self compensation and linearity correction, improve output linearity degree, ensure that stability and the measuring accuracy of signal processing system.Meanwhile, two semiconductor chips adopt the structure tiled at same plane, and thickness is identical with existing one chip hall sensing unit, and voltage generator adopts the structure of four pins, and convenient repacking, is more suitable for using on current sensor.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail:
Fig. 1 is electrical block diagram of the present utility model;
Fig. 2 is casing packing structure schematic diagram of the present utility model.
Embodiment
With reference to accompanying drawing, the linear differential Hall voltage generator of this tile arrangement comprises and to be laid on substrate and the specification of the first Hall semiconductor chip 11 be close to and the second Hall semiconductor chip 12, two semiconductor chips is all identical with electrical properties.First Hall semiconductor chip 11 and the second Hall semiconductor chip 12 are oppositely serially connected in constant current source power supply loop, the voltage output end of the first Hall semiconductor chip 11 connects the first differential amplifier 14, the output terminal of output terminal and the second differential amplifier 15 that the voltage output end of the second Hall semiconductor chip 12 connects the second differential amplifier 15, first differential amplifier 14 is connected to the 3rd differential amplifier 16.Voltage generator housing is provided with the positive power terminal be connected with positive supply VCC, the negative power source terminal be connected with negative supply VSS, ground terminal GND and voltage generator lead-out terminal.Constant current source power supply loop is formed by positive supply VCC ground connection after constant current source 13, and three differential amplifiers drive by positive supply and negative supply, and voltage generator lead-out terminal is drawn by the output terminal of the 3rd differential amplifier.
In the utility model, two semiconductor chips are rectangular sheet, and two rectangular sheets are positioned at same plane and size is identical with thickness, and meanwhile, the center distance as far as possible between reduction two rectangular sheet, gets edge spacing≤1mm.Two semiconductor chips adopt the structure tiled at same plane, and thickness is identical with existing one chip hall sensing unit, and voltage generator adopts the structure of four pins, and convenient repacking, is more suitable for using on current sensor.
Two Hall semiconductor chips are oppositely connected in series, and its working current is identical, and direction is contrary, the output polarity of its two Hall voltage generators formed is contrary, output voltage has difference mode signal feature, asks poor mode output signal voltage, have Differential Characteristics after amplifying with voltage.Output due to voltage generator has difference output feature, voltage generator self can suppress common-mode signal and temperature drift, there is the feature of self compensation and linearity correction, improve output linearity degree, ensure that stability and the measuring accuracy of signal processing system.
The left-half of Fig. 1 is Hall voltage generator schematic diagram in the utility model.In figure, the electrical properties of two semiconductor chips 11,12 is identical, and dimensional parameters is identical; 13 is constant current source, and VCC is positive supply; B be act on 11,12 magnetic induction density, ⊙ represents direction; If the working current flowing through 11,12 is I, the obvious size of current of 11,12 is equal, and direction is contrary; 11, the space structure of 12 be tiling, at grade symmetrical, its spacing is enough little, can be considered that their magnetic induction density of effect is equal; 11 Hall voltages exported are U1, and 12 Hall voltages exported are U2.
Right half part in Fig. 1 is the schematic diagram of differential amplifier in the utility model.In figure, A1, A2, A3 represent operational amplifier, and R1-R12 is resistance, and wherein A1 and R1, R2, R3, R4 form the first differential amplifier 14, connect the output of the first Hall semiconductor chip, and input voltage is U1, output voltage is U3; A2 and R5, R6, R7, R8 form the second differential amplifier 15, connect the output of the second Hall semiconductor chip, and input voltage is U2, output voltage is U4; The parameter of these two differential amplifiers is identical, if the gain of the two is K1; A3 and R9, R10, R11, R12 form the 3rd differential amplifier 16, and its input connects A1, A2 respectively and exports, and input voltage is U3, U4, and output voltage is UO, if its gain is K2; VCC is positive supply, and VSS is negative supply.
Fig. 2 is encapsulation schematic diagram of the present utility model, and in figure, pin 1 is work positive supply VCC, and pin 2 is output voltage UO, and pin 3 is power supply ground GND, and pin 4 is negative supply VSS; Sensor thickness after encapsulation is as the thickness of same Hall element.
Quantitative test is carried out to the effect that the utility model brings below, first analyze the voltage output characteristics of two Hall semiconductor chips.Voltage generator is made up of two panels Hall semiconductor chip, and Hall semiconductor chip is called for short Hall voltage generator or Hall element, and its output voltage is directly proportional to magnetic induction density B.If the parameter of two Hall elements is identical, its working current equal and opposite in direction, direction is contrary, and the Hall voltage coefficient of Hall element is KH, and according to Hall effect, two Hall element output characteristics can be expressed as:
U
1＝+K
HB(1)
U
2＝-K
HB(2)
When the temperature is changed, Hall element will produce temperature drift, if the temperature drift voltage that temperature causes is Ut, formula (1), formula (2) can be modified to:
U
1＝U
t+K
HB(3)
U
2＝U
t-K
HB(4)
Formula (3) and formula (4) show, if the working current equal and opposite in direction that the Hall element of two same natures passes through, direction is contrary, when being in same magnetic field, temperature drift polarity of voltage is not with changes of magnetic field, the polarity of Hall voltage is contrary, and namely temperature drift voltage U t belongs to common-mode signal, and signal voltage KHB belongs to difference mode signal.
Below output characteristics of the present utility model is analyzed.The differential amplifier that reference Fig. 1, A1 are formed is for amplifying U1, and the differential amplifier that A2 is formed is for amplifying U2, if the gain of A1, A2 is K1, according to formula 3, formula 4, then the output voltage of A1, A2 is not:
U
3＝K
1U
t+K
1K
HB(5)
U
4＝K
1U
t-K
1K
HB(6)
The differential amplifier that the output of A1, A2 is formed through A3 carries out differential amplification, if the gain of A3 is K2, according to formula (5), formula (6), output voltage is U
o=U
3-U
4.
U
O＝2K
1K
2K
HB(7)
Because K1, K2, KH are constant, make K=2K
1k
2k
h, then formula 7 can be rewritten as
U
O＝KB(8)
From formula (7), the output of voltage generator has curbed temperature drift voltage U t, and the output voltage after two Hall element differential amplification is the twice of single hall element output voltage, has doubled the sensitivity of measuring; From formula (8), the output voltage of voltage generator is only relevant with magnetic induction density, and UO and B is directly proportional, and has nothing to do, significantly improve the linearity, effectively inhibit temperature drift on the impact of sensor with temperature drift.
For encapsulating structure of the present utility model, with reference to Fig. 2, the Hall voltage generator of tile arrangement and differential amplifier circuit are encapsulated in same encapsulating housing.Wherein, pin 1 is work positive supply VCC, and pin 2 is output voltage UO, and pin 3 is power supply ground GND, and pin 4 is negative supply VSS.Because Hall element adopts tile arrangement, the voltage generator thickness after encapsulation is identical with the package thickness of existing single Hall element.
The output characteristics optimizing voltage generator of the present utility model, has inexpensive, simple, practical feature.Differential type amplifies the advantage exporting and have and suppress common mode interference, reduce temperature drift, increase signal amplitude, voltage generator has the characteristic of temperature self-compensation and linearity correction, can default temperature compensation measure, for simplifying circuit design, the stability improving measuring system and signal processing system and measuring accuracy, there is realistic meaning; The package thickness of voltage generator reduces, and is more suitable for practical application.
In sum, the utility model is not limited to above-mentioned embodiment.Those skilled in the art, under the prerequisite not departing from spirit and scope of the present utility model, can do some changes and modification.Protection domain of the present utility model should be as the criterion with claim of the present utility model.
Claims (3)
1. the linear differential Hall voltage generator of a tile arrangement, it is characterized in that comprising and be laid on substrate and the first Hall semiconductor chip (11) be close to and the second Hall semiconductor chip (12), the specification of two semiconductor chips is all identical with electrical properties, first Hall semiconductor chip (11) and the second Hall semiconductor chip (12) are oppositely serially connected in constant current source power supply loop, the voltage output end of the first Hall semiconductor chip (11) connects the first differential amplifier (14), the voltage output end of the second Hall semiconductor chip (12) connects the second differential amplifier (15), the output terminal of the first differential amplifier (14) and the output terminal of the second differential amplifier (15) are connected to the 3rd differential amplifier (16).
2. the linear differential Hall voltage generator of tile arrangement as claimed in claim 1, is characterized in that voltage generator housing being provided with the positive power terminal be connected with positive supply (VCC), the negative power source terminal be connected with negative supply (VSS), ground terminal (GND) and voltage generator lead-out terminal; Described constant current source power supply loop is formed by positive supply (VCC) ground connection after constant current source (13), and three differential amplifiers drive by positive supply and negative supply, and voltage generator lead-out terminal is drawn by the output terminal of the 3rd differential amplifier.
3. the linear differential Hall voltage generator of tile arrangement as claimed in claim 1 or 2, it is characterized in that two semiconductor chips are rectangular sheet, two rectangular sheets are positioned at same plane and size is identical with thickness, the spacing≤1mm at two rectangular sheet edges.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521004024.0U CN205139762U (en) | 2015-12-04 | 2015-12-04 | Linear difference hall voltage generator of tiling structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521004024.0U CN205139762U (en) | 2015-12-04 | 2015-12-04 | Linear difference hall voltage generator of tiling structure |
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| CN205139762U true CN205139762U (en) | 2016-04-06 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018036210A1 (en) * | 2016-08-26 | 2018-03-01 | 深圳市前海安测信息技术有限公司 | Apparatus and method for precision measurement of micro signals from biosensors |
| WO2018036211A1 (en) * | 2016-08-26 | 2018-03-01 | 深圳市前海安测信息技术有限公司 | Temperature drift compensation apparatus and method for measuring micro signals |
| WO2018036209A1 (en) * | 2016-08-26 | 2018-03-01 | 深圳市前海安测信息技术有限公司 | Apparatus and method for multistage amplification of micro signals from biosensors |
| CN109150124A (en) * | 2018-10-17 | 2019-01-04 | 湖南科技学院 | A kind of four Hall element displacement measurement differential amplifier circuits |
| CN112447693A (en) * | 2019-09-03 | 2021-03-05 | 联发科技股份有限公司 | Semiconductor device with a plurality of semiconductor chips |
-
2015
- 2015-12-04 CN CN201521004024.0U patent/CN205139762U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018036210A1 (en) * | 2016-08-26 | 2018-03-01 | 深圳市前海安测信息技术有限公司 | Apparatus and method for precision measurement of micro signals from biosensors |
| WO2018036211A1 (en) * | 2016-08-26 | 2018-03-01 | 深圳市前海安测信息技术有限公司 | Temperature drift compensation apparatus and method for measuring micro signals |
| WO2018036209A1 (en) * | 2016-08-26 | 2018-03-01 | 深圳市前海安测信息技术有限公司 | Apparatus and method for multistage amplification of micro signals from biosensors |
| CN109150124A (en) * | 2018-10-17 | 2019-01-04 | 湖南科技学院 | A kind of four Hall element displacement measurement differential amplifier circuits |
| CN112447693A (en) * | 2019-09-03 | 2021-03-05 | 联发科技股份有限公司 | Semiconductor device with a plurality of semiconductor chips |
| US11942399B2 (en) | 2019-09-03 | 2024-03-26 | Mediatek Inc. | Semiconductor devices having a serial power system |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160406 Termination date: 20161204 |