CN205029171U - Narrow linewidth excimer laser resonant cavity - Google Patents
Narrow linewidth excimer laser resonant cavity Download PDFInfo
- Publication number
- CN205029171U CN205029171U CN201520575379.9U CN201520575379U CN205029171U CN 205029171 U CN205029171 U CN 205029171U CN 201520575379 U CN201520575379 U CN 201520575379U CN 205029171 U CN205029171 U CN 205029171U
- Authority
- CN
- China
- Prior art keywords
- resonant cavity
- prism
- excimer laser
- cavity
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 claims abstract description 18
- 230000002349 favourable effect Effects 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Landscapes
- Lasers (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201520575379.9U CN205029171U (en) | 2015-08-03 | 2015-08-03 | Narrow linewidth excimer laser resonant cavity |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201520575379.9U CN205029171U (en) | 2015-08-03 | 2015-08-03 | Narrow linewidth excimer laser resonant cavity |
Publications (1)
Publication Number | Publication Date |
---|---|
CN205029171U true CN205029171U (en) | 2016-02-10 |
Family
ID=55261677
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201520575379.9U Active CN205029171U (en) | 2015-08-03 | 2015-08-03 | Narrow linewidth excimer laser resonant cavity |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN205029171U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109845054A (en) * | 2016-10-17 | 2019-06-04 | 西默有限公司 | Control to the spectral characteristic of pulsed light beam |
-
2015
- 2015-08-03 CN CN201520575379.9U patent/CN205029171U/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109845054A (en) * | 2016-10-17 | 2019-06-04 | 西默有限公司 | Control to the spectral characteristic of pulsed light beam |
CN109845054B (en) * | 2016-10-17 | 2022-03-15 | 西默有限公司 | Control of spectral characteristics of pulsed light beam |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN203103748U (en) | Fiber laser outputting laser light with dual wavelengths of 659.5nm and 1319nm | |
CN100379104C (en) | Laser diode array double-feedback external cavity laser | |
TW200627737A (en) | High power high pulse repetition rate gas discharge laser system bandwidth management | |
CN102981278B (en) | Laser linewidth based on isosceles right-angled triangular prism narrows and expands method and system | |
Ciapurin et al. | Spectral combining of high-power fiber laser beams using Bragg grating in PTR glass | |
US9435942B2 (en) | Method of optimizing multicore optical fiber and devices utilizing same | |
CN104133267A (en) | Method for manufacturing multi-wavelength volume bragg gratings | |
CN110989182A (en) | Beam combination light source device | |
CN201398012Y (en) | Semiconductor laser with pressed narrow line width and locked wave length | |
KR20110089130A (en) | Optical element, laser beam oscillation device and laser beam amplifying device | |
CN106461874B (en) | Array waveguide grating and tunable laser with the array waveguide grating | |
CN104090362B (en) | A kind of tunable flat-top arrowband type optical filter based on MEMS | |
CN205029171U (en) | Narrow linewidth excimer laser resonant cavity | |
CN105048262A (en) | Narrow-linewidth excimer laser with improved resonant cavity | |
CN203942144U (en) | A kind ofly improve the device that semiconductor laser spectrum closes light beams quality | |
CN102662287A (en) | Femtosecond pulse dispersion compensation device | |
CN110908129A (en) | Beam combining optical device | |
CN105048279A (en) | Semiconductor laser light source output device for alkali metal vapor laser device pumping | |
CN203117537U (en) | Laser-linewidth-reducing and beam-expanding device based on isosceles right triangular prisms | |
CN203135202U (en) | Narrow linewidth excimer laser | |
CN102323704B (en) | Dispersion accommodation device | |
US7751461B2 (en) | Linewidth-narrowed excimer laser cavity | |
CN104953466A (en) | Laser light source and design method thereof | |
CN2924866Y (en) | Laser diode array double-feedback external cavity laser | |
CN105071211A (en) | Dual-wavelength tunable laser apparatus based on external cavity structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200824 Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Address before: 100190, No. 19 West Fourth Ring Road, Beijing, Haidian District Patentee before: Aerospace Information Research Institute,Chinese Academy of Sciences Effective date of registration: 20200824 Address after: 100190, No. 19 West Fourth Ring Road, Beijing, Haidian District Patentee after: Aerospace Information Research Institute,Chinese Academy of Sciences Address before: 100094, No. 9 Deng Nan Road, Beijing, Haidian District Patentee before: Academy of Opto-Electronics, Chinese Academy of Sciences |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210315 Address after: 100176 building 10, 156 Jinghai 4th Road, Daxing Economic and Technological Development Zone, Beijing Patentee after: BEIJING RSLASER OPTO-ELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |