CN205004946U - IGBT active clamping protection circuit - Google Patents
IGBT active clamping protection circuit Download PDFInfo
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- CN205004946U CN205004946U CN201520802179.2U CN201520802179U CN205004946U CN 205004946 U CN205004946 U CN 205004946U CN 201520802179 U CN201520802179 U CN 201520802179U CN 205004946 U CN205004946 U CN 205004946U
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- igbt
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- diode
- voltage
- bipolar transistor
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Abstract
The utility model discloses a IGBT active clamping protection circuit is the partly of IGBT drive protection circuit, include insulated gate bipolar transistor IGBT and the promotion level of being connected with insulated gate bipolar transistor's gate leve, still include electric capacity clamp circuit, developments feedback circuit and static feedback circuit, insulated gate bipolar transistor's collecting electrode and the anodal of dc bus are connected, developments feedback circuit mainly suppresses the diode by a transient voltage, feedback capacitance and first diode constitute, static feedback circuit connects between the output of clamp capacitor and insulated gate bipolar transistor IGBT's gate leve, insulated gate bipolar transistor's shutoff voltage spike was less than the maximum permissible value of album emitter -base bandgap grading voltage when the assurance overflowed shutoff and short -circuit protection. This circuit can not only accurately vise the overvoltage, can also guarantee the developments and inactive balance of active circuit medium voltage, has that the loss is less, the response is fast, a simple structure, characteristics that the reliability is high, and the IGBT drive that can be applied to under the various operating modes is protected among the circuit design.
Description
Technical field
The utility model relates to a kind of tandem type high voltage converter, is specifically related to a kind of IGBT active clamp protection circuit of tandem type high voltage converter, belongs to electric and electronic technical field.
Background technology
Igbt (IGBT) is the advantage integrating power transistor (GTR) and power field effect pipe (MOSFET), have the advantages that to be easy to drive, peak current capacity turns off greatly, certainly, switching frequency is high, be widely used in high voltage, large-power occasions in recent years.
The turn-off protection of opening of IGBT is high voltage converter application design the very important point.In high-power applications occasions such as high voltage converters, there is larger stray inductance (tens to hundreds of nH) in main circuit (between DC capacitor to IGBT module).When IGBT turns off, collector current rate of descent is higher, namely there is higher di/dt, and induce electromotive force at stray inductance two ends, direction is consistent with DC bus-bar voltage, and is superimposed upon IGBT two ends together with DC bus.Thus make to produce very large surge voltage between IGBT collector electrode-emitter, even can, more than the specified collection emitter voltage of IGBT, IGBT be damaged.
Active clamp circuit is a kind of feedback circuit be added between IGBT collector electrode and gate pole, contains too high due to voltage spikes.The essence of active clamp circuit is a kind of negative feedback, and when the voltage being carried in IGBT two ends reaches threshold value, active clamp circuit action, circuit will feed back to IGBT grid, and gate voltage is elevated, and the high voltage on IGBT is limited.
In prior art, traditional active clamp protection circuit as shown in Figure 1.This circuit adopts the method for Transient Voltage Suppressor (TVS) active-clamp, and its principle is exactly that TVS is breakdown when collector potential is too high, electric current is had to flow to gate pole, gate potentials is able to lifting, thus makes cut-off current too not precipitous, and then reduces shutoff voltage spike.But traditional active clamp can only limit overvoltage, can not guarantee the balance of the dynamic and static state of voltage, and TVS pipe loss is also larger, its reliability is restricted.
As shown in Figure 2, be the active clamp circuit figure of another kind improvement.The electric current of TVS is introduced the prime promoting level by this circuit, is equivalent to the gain adding one-level to the electric current of TVS pipe, can reduces the electric current flowing through TVS pipe, improve the performance of this circuit.Simultaneously interior current feed circuit below, makes the dynamic property of circuit better, and the inflow gate pole that the electric current of TVS can be very fast, the response of circuit is faster.But the loss of TVS pipe is still very large in this circuit, and promotion level has larger time delay, and collector potential may be made not vise timely, and circuit effect is not very good, and the working point of active clamp circuit is still optimized not.
Utility model content
For above-mentioned deficiency; technical problem to be solved in the utility model is to provide a kind of IGBT active clamp protection circuit; this circuit accurately and timely can not only vise overvoltage; the balance of the dynamic and static state of voltage in source circuit can also be ensured; this circuit has the advantages that loss is less, response is fast, structure is simple, reliability is high, can be applicable in the IGBT Drive Protecting Circuit design under various operating mode.
For solving the problem, the utility model is achieved through the following technical solutions:
A kind of IGBT active clamp protection circuit; it is a part for IGBT Drive Protecting Circuit; the promotion level comprising insulated gate bipolar transistor IGBT and be connected with the gate leve of igbt, also comprises capacitor-clamped circuit, dynamical feedback circuit and static feedback circuit, wherein
The collector electrode of described igbt is connected with the positive pole of DC bus, for controlling the break-make of inverter circuit;
Described capacitor-clamped circuit is formed primarily of clamp capacitor C1 and current-limiting resistance R3, and the input of clamp capacitor C1 is connected with the collector electrode of igbt, its output is electric after being connected with current-limiting resistance R3 is connected with the negative pole of DC bus-bar voltage;
Described dynamical feedback circuit is formed primarily of the first transient voltage suppressor diode TVS1, feedback capacity C2 and the first diode D1, the negative electrode of the first transient voltage suppressor diode TVS1 is connected with the output of clamp capacitor C1, its anode is connected with one end of feedback capacity C2 by a resistance R1, the other end of feedback capacity C2 is connected with the anode of the first diode D1, and the negative electrode of the first diode D1 is connected in the base stage of promotion level;
Between the output that described static feedback circuit is connected to clamp capacitor C1 and the gate leve of insulated gate bipolar transistor IGBT; for raising gate potentials; to ensure when overcurrent turn-off function and short-circuit protection, the shutoff voltage spike of insulated gate bipolar transistor IGBT penetrates the maximum permissible value of collecting voltage lower than collection.
In such scheme, described static feedback circuit is formed primarily of the second transient voltage suppressor diode TVS2 and the second diode D2, the negative electrode of the second transient voltage suppressor diode TVS2 be connected, its anode is connected with the anode of the second diode D2 after resistance R2, the negative electrode of the second diode D2 is connected on the gate pole of insulated gate bipolar transistor IGBT.
Above-mentioned IGBT active clamp protection circuit, also comprises a voltage source V
cCwith diode D3, voltage source V
cCpositive pole be connected with the negative electrode of diode D3, the anode of diode D3 is connected on the gate pole of insulated gate bipolar transistor IGBT.
In such scheme, described voltage source V
cCmagnitude of voltage can be 15V.
Compared with prior art, beneficial effect is:
1) the utility model not only prevents the effect of DC bus-bar voltage false triggering active clamp work effectively by the capacitor-clamped circuit arranged, and also reduces the quantity of transient voltage suppressor diode, and then reduces the loss of circuit;
2) time delay of whole drive circuit of the dynamical feedback circuit compensation of setting is passed through, not only reduce the gate pole velocity of discharge of igbt, also slow down the current variation speeds of its collector electrode, play the effect improving due to voltage spikes, and carry out dynamic adjustments by the rate of change feeding back shutoff voltage, response speed is faster;
3) the static feedback circuit by arranging, effectively can prevent IGBT under overcurrent turn-off function and short-circuit protection situation breakdown, substantially increase fail safe and the stability of circuit.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of traditional active clamp protection circuit.
Fig. 2 is the circuit diagram of the another kind of active clamp protection circuit improved.
Fig. 3 is the circuit diagram of this IGBT active clamp protection circuit.
Fig. 4 is a topological diagram of high voltage transducer power unit, and the utility model is applied in an example environment of H-bridge inverter circuit.
Number in the figure is: IGBT, igbt; C1, clamp capacitor; C2, feedback capacity; R1, R2 are resistance; R3, current-limiting resistance; TVS1, the first transient voltage diode; TVS2, the second transient voltage diode; D1, the first diode; D2, the second diode; D3, diode; V
cC, voltage source; V
dC+, DC bus positive voltage; V
dC-, DC bus negative voltage.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is further explained illustrates, but not in order to limit the utility model.
As shown in Figure 3; a kind of IGBT active clamp protection circuit; it is a part for IGBT Drive Protecting Circuit; the promotion level comprising insulated gate bipolar transistor IGBT and be connected with the gate leve of insulated gate bipolar transistor IGBT; also comprise capacitor-clamped circuit, dynamical feedback circuit and static feedback circuit, wherein
The collector electrode C of described insulated gate bipolar transistor IGBT is connected with the positive pole of DC bus-bar voltage, for controlling the break-make of inverter circuit; In the present embodiment, the magnitude of voltage of described DC bus is 1kV.
Described capacitor-clamped circuit is formed primarily of clamp capacitor C1 and current-limiting resistance R3, and the input of clamp capacitor C1 is connected with the collector electrode C of insulated gate bipolar transistor IGBT, its output is electric after being connected with current-limiting resistance R3 is connected with the negative pole of DC bus-bar voltage; Its Main Function is: be serially connected on the both positive and negative polarity of DC bus-bar voltage by capacitor-clamped circuit, make clamp capacitor C1 both end voltage clamper in DC bus-bar voltage, prevent the work of DC bus-bar voltage false triggering active clamp on the one hand, reduce the quantity of TVS pipe on the other hand, and then reduce the loss of circuit.
Described dynamical feedback circuit is formed primarily of the first transient voltage suppressor diode TVS1, feedback capacity C2 and the first diode D1, the negative electrode of the first transient voltage suppressor diode TVS1 is connected with the output of clamp capacitor C1, its anode is connected with one end of feedback capacity C2 by a resistance R1, the other end of feedback capacity C2 is connected with the anode of the first diode D1, and the negative electrode of the first diode D1 is connected in the base stage of promotion level; Its Main Function is: as collector electrode C and the emitter voltage V of insulated gate bipolar transistor IGBT
cE>V
c1+ V
tVS1time, by dynamical feedback circuit again to gate pole charging, compensate the time delay of whole drive circuit.Therefore V
cEthe rate of change of voltage has directly reacted i
c2change, i
c2effect be equivalent to the velocity of discharge of gate pole reducing insulated gate bipolar transistor IGBT, slow down IGBT collector electrode i
cpace of change, thus improve due to voltage spikes.
Between the output that described static feedback circuit is connected to clamp capacitor C1 and the gate leve of insulated gate bipolar transistor IGBT; for raising gate potentials, during to ensure overcurrent turn-off function and short-circuit protection, the shutoff voltage spike of IGBT is lower than the maximum permissible value of collection emitter voltage.This static feedback circuit is specifically formed primarily of the second transient voltage suppressor diode TVS2 and the second diode D2, the negative electrode of the second transient voltage suppressor diode TVS2 be connected, its anode is connected with the anode of the second diode D2 after resistance R2, the negative electrode of the second diode D2 is connected on the gate pole of insulated gate bipolar transistor IGBT.
Above-mentioned IGBT active clamp protection circuit, also comprises a voltage source V
cCwith diode D3, voltage source V
cCpositive pole be connected with the negative electrode of diode D3, the anode of diode D3 is connected on the gate pole of insulated gate bipolar transistor IGBT.In the present embodiment, described voltage source V
cCmagnitude of voltage be 15V.Voltage source V
cCeffect be vise gate voltage, make gate pole surge voltage can not be too high, the effect of diode D3 be that conducting gate pole flows to voltage source V
cCelectric current, cut-ff voltage source V
cCto the electric current of gate pole, to avoid causing damage to IGBT.
The utility model is mainly used in the IGBT protection circuit of the high-power converters such as high voltage converter.Concrete, below the embodiment of this active clamp circuit is described in detail.
As shown in Figure 4, be a kind of topological circuit figure of high voltage transducer power unit.Form H-bridge inverter circuit according to topological diagram four IGBT, upper pipe IGBT is AU1 and AU2, and lower pipe IGBT is AD1 and AD2, the collector electrode C of upper pipe IGBT and the positive V of DC bus
dC+be connected, the emitter E of lower pipe IGBT and DC bus V
dC-be connected.
To be applied in pipe IGBT by circuit diagram as shown in Figure 3, be specially: clamp capacitor C1 one end will connect the collector electrode C of upper pipe IGBT, be equal to and be connected to DC bus positive voltage V
dC+, the other end is connected to DC bus negative voltage V by current-limiting resistance R3
dC-, the voltage of clamp capacitor C1 equals the voltage of DC bus.
When IGBT is in general operating mode, mainly dynamical feedback circuit carries out work.I.e. voltage V
cE>V
c1+ V
tVS1time, the first transient voltage suppressor diode TVS1 is breakdown, feedback capacity C
2on the electric current that flows through be i
c2=C
2× dV
cE/ dt, current i
c2flow into through the first diode D1 and promote level prime, make again to gate pole charging, thus ensure U
gEmaintain Miller level, compensate the time delay of whole drive circuit, be equivalent to the turn-off time that slow down IGBT, improve shutoff voltage spike.V
cEvoltage change ratio directly react i
c2change, i
c2effect be equivalent to and reduce the gate pole velocity of discharge, higher dV
cE/ dt more illustrates that this shutoff voltage spike can be higher, now current i
c2also larger, IGBT turn off delay time is just longer.Meanwhile, dV is passed through
cEthe rate of change of/dt regulates and controls dynamical feedback circuit working, is also a kind of for shutoff voltage V
cEone regulate and control in advance, make circuit have better service behaviour.
Concrete, according to actual working environment by calculating the parameter size regulating feedback capacity C2, circuit can be made to have suitable dynamic characteristic, and the first diode D1 is specially fast recovery diode, and effect is On current i
c2with the interference preventing promotion level prime electric current.
When IGBT is in overcurrent turn-off function or short-circuit protection, static feedback circuit working.Now V
cE>V
c1+ V
tVS2(it should be noted that, the withstand voltage U of transient voltage suppressor diode
tVS2>U
tVS1) the first transient voltage suppressor diode TVS1 is breakdown, current i
tVS2after resistance R2, flow through the second diode D2, finally arrive the gate pole of IGBT.This circuit is an interior current feed circuit, by i
tVS2directly feed back to gate pole, charge together with dynamical feedback circuit to gate pole, when special operation condition, gain is larger, response is better to make circuit.
Need specified otherwise, in high voltage transducer power unit, the shutoff voltage spike of upper pipe IGBT generally can be more severe.For lower pipe IGBT, as long as one end of clamp capacitor C1 in Fig. 3 is directly connected in the emitter E of IGBT, namely DC bus negative voltage V
dC-, its other end connects DC bus positive voltage V by current-limiting resistance R3
dC+.In fact clamp circuit still to connect between DC bus positive voltage and negative voltage and clamp capacitor voltage equals DC bus-bar voltage, therefore just the same in essence with IGBT dynamic active clamping protective circuit of the present utility model.
These are only and execution mode of the present utility model is described; be not limited to the utility model; for a person skilled in the art; all within spirit of the present utility model and principle; any amendment of doing, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.
Claims (3)
1. an IGBT active clamp protection circuit; it is a part for IGBT Drive Protecting Circuit; the promotion level comprising igbt (IGBT) and be connected with the gate leve of igbt (IGBT); it is characterized in that: also comprise capacitor-clamped circuit, dynamical feedback circuit and static feedback circuit, wherein
The collector electrode C of described igbt (IGBT) is connected with the positive pole of DC bus-bar voltage, for controlling the break-make of inverter circuit;
Described capacitor-clamped circuit is formed primarily of clamp capacitor (C1) and current-limiting resistance (R3), and the input of clamp capacitor (C1) is connected with the collector electrode C of igbt (IGBT), its output is electric after being connected with current-limiting resistance (R3) is connected with the negative pole of DC bus-bar voltage;
Described dynamical feedback circuit is formed primarily of the first transient voltage suppressor diode (TVS1), feedback capacity (C2) and the first diode (D1), the negative electrode of the first transient voltage suppressor diode (TVS1) is connected with the output of clamp capacitor (C1), its anode is connected with one end of feedback capacity (C2) by a resistance (R1), the other end of feedback capacity (C2) is connected with the anode of the first diode (D1), and the negative electrode of the first diode (D1) is connected in the base stage of promotion level;
Described static feedback circuit is connected between the output of clamp capacitor (C1) and the gate leve of igbt (IGBT); for raising gate potentials; during to ensure overcurrent turn-off function and short-circuit protection, the shutoff voltage spike of igbt (IGBT) is lower than the maximum permissible value collecting emitter voltage.
2. IGBT active clamp protection circuit according to claim 1; it is characterized in that: described static feedback circuit is formed primarily of the second transient voltage suppressor diode (TVS2) and the second diode (D2); the negative electrode of the second transient voltage suppressor diode (TVS2) be connected, its anode is connected with the anode of the second diode (D2) after resistance (R2), the negative electrode of the second diode (D2) is connected on the gate pole of igbt (IGBT).
3. IGBT active clamp protection circuit according to claim 1 and 2, is characterized in that: also comprise a voltage source (V
cC) and diode (D3), voltage source (V
cC) positive pole be connected with the negative electrode of diode (D3), the anode of diode (D3) is connected on the gate pole of igbt (IGBT).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520802179.2U CN205004946U (en) | 2015-10-16 | 2015-10-16 | IGBT active clamping protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520802179.2U CN205004946U (en) | 2015-10-16 | 2015-10-16 | IGBT active clamping protection circuit |
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| Publication Number | Publication Date |
|---|---|
| CN205004946U true CN205004946U (en) | 2016-01-27 |
Family
ID=55161816
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|---|---|---|---|
| CN201520802179.2U Expired - Fee Related CN205004946U (en) | 2015-10-16 | 2015-10-16 | IGBT active clamping protection circuit |
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| Country | Link |
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| CN (1) | CN205004946U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105186847A (en) * | 2015-10-16 | 2015-12-23 | 桂林电子科技大学 | IGBT active clamping protection circuit |
| CN112311374A (en) * | 2020-10-23 | 2021-02-02 | 华为技术有限公司 | Switching circuit |
| CN113615085A (en) * | 2019-03-18 | 2021-11-05 | 西门子股份公司 | Protection circuit for semiconductor switch |
-
2015
- 2015-10-16 CN CN201520802179.2U patent/CN205004946U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105186847A (en) * | 2015-10-16 | 2015-12-23 | 桂林电子科技大学 | IGBT active clamping protection circuit |
| CN113615085A (en) * | 2019-03-18 | 2021-11-05 | 西门子股份公司 | Protection circuit for semiconductor switch |
| CN112311374A (en) * | 2020-10-23 | 2021-02-02 | 华为技术有限公司 | Switching circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160127 Termination date: 20171016 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |