CN204819977U - Wire cut electrical discharge machining - Google Patents
Wire cut electrical discharge machining Download PDFInfo
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- CN204819977U CN204819977U CN201520569165.0U CN201520569165U CN204819977U CN 204819977 U CN204819977 U CN 204819977U CN 201520569165 U CN201520569165 U CN 201520569165U CN 204819977 U CN204819977 U CN 204819977U
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- discharge machining
- electrical discharge
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Abstract
The utility model relates to a technical field is made to the crystalline grain of refrigeration piece, and the name is a wire cut electrical discharge machining, wire cut electrical discharge machining, including the wire cut electrical discharge machining body, the wire cut electrical discharge machining body has the frame, is provided with fixture in the frame, and the line of cut is provided with rack -mounted cell through the station around the station in addition, has heating device around the cell, has the advantage that more can satisfy some special production needs, the line cutting method of semiconductor crystal bar, it is formed in the cutting of the enterprising column rule of wire cut electrical discharge machining by the crystal bar, wire cut electrical discharge machining includes the wire cut electrical discharge machining body, the wire cut electrical discharge machining body has the frame, be provided with fixture in the frame, fixture are preceding to be the station, be provided with rack -mounted cell around the station, there is heating device around the cell, the temperature of crystal bar and cell is 80 - 90 DEG C during the cutting crystal bar, it is lower to have the crystalline grain cost of producing, the qualification rate is higher, the advantage that product quality is better.
Description
Technical field
The utility model relates to the crystal grain manufacturing technology field of cooling component, particularly relates to a kind of wire cutting machine, also relates to the wire cutting method of semiconductor crystal bar.
Background technology
Semiconductor refrigeration member comprises porcelain plate and semiconductor grain, and semiconductor grain is welded on porcelain plate, and crystal grain is the structure of cuboid, and it is that semiconductor crystal bar cutting on line machine forms through Linear cut.
In prior art, wire cutting machine does not have heater, and the parts for processing at room temperature carry out, and can not meet the needs that some are produced.
In addition, in prior art, crystal bar cutting on line machine cuts, generally carries out at normal temperatures, the crystal grain that such cutting mode is produced has that yield rate is lower, the shortcoming of inferior quality, adds production cost, have impact on semiconductor refrigeration member productivity ratio and product quality.
Summary of the invention
The purpose of this utility model is exactly for above-mentioned shortcoming, provides a kind of wire cutting machine meeting some need of productions, also provides a kind of wire cutting method reducing production cost, improve product qualified rate, the better semiconductor crystal bar of cut quality.
Wire cutting machine technical scheme of the present utility model is achieved in that a kind of wire cutting machine, comprise wire cutting machine body, wire cutting machine body has frame, frame is provided with jig, it is station before jig, also have line of cut through station, it is characterized in that: be provided with rack-mounted cell around described station, around cell, have heater.
Say further, described cell is also provided with spray equipment.
Say further, described cell is also provided with protective gas conveying device.
The technical scheme of the wire cutting method of the utility model semiconductor crystal bar is achieved in that a kind of wire cutting method of semiconductor crystal bar, it is cut by the enterprising line of crystal bar cutting on line machine and forms, described wire cutting machine comprises wire cutting machine body, wire cutting machine body has frame, frame is provided with jig, it is station before jig, also has line of cut through station, it is characterized in that: around described station, be provided with rack-mounted cell, have heater around cell, during cutting crystal bar, the temperature of crystal bar and cell is 80-90 DEG C.
Preferably, described temperature is 85 DEG C.
Preferably, on crystal bar, glycerine or kerosene is coated with when cutting crystal bar.
Preferably, carbon dioxide is had when cutting crystal bar around crystal bar.
The beneficial effects of the utility model are:
Such wire cutting machine can meet the needs of some need of productions, and described cell is also provided with spray equipment, and described cell is also provided with protective gas conveying device, has the advantage that more can meet some special producing needs;
The wire cutting method of such semiconductor crystal bar has that the crystal grain cost produced is lower, qualification rate is higher, the better advantage of product quality; Described temperature is 85 DEG C, is coated with glycerine or kerosene when cutting crystal bar on crystal bar, having carbon dioxide, having the advantage of better effects if when cutting crystal bar around crystal bar.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of wire cutting machine of the present utility model.
Wherein: 1, frame 2, jig 3, station 4, line of cut 5, cell 6, heater 7, spray equipment 8, air transporting arrangement.
Detailed description of the invention
Below in conjunction with drawings and Examples, the utility model is described in further detail.
As shown in Figure 1, a kind of wire cutting machine, comprise wire cutting machine body, wire cutting machine body has frame 1, frame is provided with jig 2, is station 3 before jig, also has line of cut 4 through station, it is characterized in that: be provided with rack-mounted cell 5 around described station, around cell, have heater 6.
Say further, described cell is also provided with spray equipment 7.
Say further, described cell is also provided with protective gas conveying device 8.
When using this wire cutting machine, can be stuck on jig by processing component, heating devices heat, processing component is having uniform temperature and is cutting at stable temperature; Further, this wire cutting machine there is also mounted spray equipment, can meet when cutting, and sprays some liquid as required, be more conducive to cutting on the parts of processing; Further, this wire cutting machine there is also mounted protective gas conveying device, and can meet when cutting, workpiece operation in required protective gas environment, what such as have can filling CO 2, argon gas, methane etc., obtains better effect.
In order to the wire cutting method of this semiconductor crystal bar is better described, below in conjunction with embodiment further instruction.
Following examples use identical crystal bar, cut at identical wire cutting machine, make identical crystal grain.
Embodiment 1
Crystal bar cutting on line machine cuts, temperature room temperature 25 DEG C.
The qualification rate of product is 85%, and the edges and corners of qualified products---crystal grain are jagged, has sintering dizzy at crystal grain outer surface.
Embodiment 2
Crystal bar cutting on line machine cuts, utilizes the cell on wire cutting machine, little indoor are provided with heater, crystal bar and cell are all remained on 80 DEG C, cuts crystal bar.
The qualification rate of product is 91%, and the edges and corners of qualified products---crystal grain are jagged, and crystal grain has sintering dizzy outside.
Embodiment 3
Crystal bar cutting on line machine cuts, utilizes the cell on wire cutting machine, little indoor are provided with heater, crystal bar and cell are all remained on 90 DEG C, cuts crystal bar.
The qualification rate of product is 95%, and the edges and corners of qualified products---crystal grain are jagged, and crystal grain has sintering dizzy outside.
Embodiment 4
Crystal bar cutting on line machine cuts, utilizes the cell on wire cutting machine, little indoor are provided with heater, crystal bar and cell are all remained on 85 DEG C, cuts crystal bar.
The qualification rate of product is 97%, and the edges and corners of qualified products---crystal grain are jagged, and crystal grain has sintering dizzy outside.
Repeat the above embodiments, or on crystal bar, be coated with glycerine or kerosene when cutting crystal bar, or have carbon dioxide when cutting crystal bar around crystal bar.
Burr reduces, and crystal grain outer surface has sintering dizzy, and the minimizing that sintering is dizzy proves that the phenomenon that crystal grain composition changes reduces.
On crystal bar, be coated with glycerine or kerosene when cutting crystal bar simultaneously, and have carbon dioxide when cutting crystal bar around crystal bar.Burr reduces, crystal grain outer surface has the dizzy minimizing of sintering, better effects if.
The foregoing is only some embodiments of the present utility model, inventor has also done many similar experiments, lead to the same conclusion, aborning, the semiconductor refrigeration member that such welding crystal grain is produced significantly improves, the quality problems caused because of snapping only have 1%, than the raising 3 percentage points of directly welding.
Claims (3)
1. a wire cutting machine, comprises wire cutting machine body, and wire cutting machine body has frame, frame is provided with jig, is station before jig, also has line of cut through station, it is characterized in that: be provided with rack-mounted cell around described station, around cell, have heater.
2. wire cutting machine according to claim 1, is characterized in that: described cell is also provided with spray equipment.
3. wire cutting machine according to claim 1 and 2, is characterized in that: described cell is also provided with protective gas conveying device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520569165.0U CN204819977U (en) | 2015-08-02 | 2015-08-02 | Wire cut electrical discharge machining |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520569165.0U CN204819977U (en) | 2015-08-02 | 2015-08-02 | Wire cut electrical discharge machining |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204819977U true CN204819977U (en) | 2015-12-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201520569165.0U Active CN204819977U (en) | 2015-08-02 | 2015-08-02 | Wire cut electrical discharge machining |
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| CN (1) | CN204819977U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105058605A (en) * | 2015-08-02 | 2015-11-18 | 河南鸿昌电子有限公司 | Wire cutting machine and wire cutting method of semiconductor crystal bar |
-
2015
- 2015-08-02 CN CN201520569165.0U patent/CN204819977U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105058605A (en) * | 2015-08-02 | 2015-11-18 | 河南鸿昌电子有限公司 | Wire cutting machine and wire cutting method of semiconductor crystal bar |
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