CN204793611U

CN204793611U - TO -CAN encapsulates semiconductor laser

Info

Publication number: CN204793611U
Application number: CN201520521443.5U
Authority: CN
Inventors: 李林森; 鲁杰; 肖黎明
Original assignee: Wuan Opline Opto-Electronics Technology Corp
Current assignee: Wuhan Huajing Microlink Technology Co ltd
Priority date: 2015-07-17
Filing date: 2015-07-17
Publication date: 2015-11-18
Anticipated expiration: 2025-07-17

Abstract

The utility model provides a TO -CAN encapsulates semiconductor laser, include: TO tube socket, semiconductor laser chip, back of the body light detector chip, pin and heat sink piece, heat sink piece sets up in the upper surface of TO tube socket, and on the TO tube socket was fixed in in the pin insulation, upper end salient in the upper surface of TO tube socket of pin, semiconductor laser chip were fixed in heat sink block list face, were connected with the brace table at the salient of a pin in the upper portion of TO tube socket upper surface, and back of the body light detector chip sets up on the brace table to be in the below of semiconductor laser chip. The utility model discloses a to carry on the back light detector install the chip and on the brace table that integrative design is connected with the pin, save independent detection chip cushion, practice thrift cushion material cost, and save out -of -the -way light detector chip and rather than a gold wire bonding technology between the cushion, simplified gold wire bonding technology, practice thrift bonded gold wire cost to the stability of laser instrument product has been improved.

Description

A kind of TO-CAN encapsulated semiconductor laser

Technical field

The utility model relates to laser technology field, relates to a kind of TO-CAN encapsulated semiconductor laser more specifically.

Background technology

TO encapsulates, i.e. TransistorOutline or Through-hole encapsulation technology, belongs to the encapsulating structure of coaxial type optical transmitting component, and it is encapsulated by original widely used transistor device and develops, industrially comparative maturity.It is little that TO encapsulates parasitic parameter, and technique is simple, and cost is low, flexible and convenient to use, and the LD encapsulation of current below 10G speed is main adopts TO encapsulation.In LD encapsulation, TO shell inner space is little, and only has four lead-in wires, does not install Thermal Electric Cooler (TEC), cost also has great advantage.

It is little that TO-CAN encapsulated semiconductor laser has volume, and energy consumption is low, and the life-span is long, need not freeze, simple and reliable process, is applicable to the advantages such as large-scale production, is widely used in optical fiber communication and Fibre Optical Sensor.Current TO-CAN encapsulated semiconductor laser mainly adopts TO56 to encapsulate, and wavelength has 1310nm, 1490nm, 1550nm etc.Typical TO-CAN encapsulated semiconductor laser has structure as shown in Figure 1, comprise TO base 1, semiconductor laser chip 2, back light detector chip 3, laser chip cushion block 4, detection chip cushion block 5, bonding gold wire 6, pin 7 and heat sink piece 8, in actual production process, first detection chip cushion block 5 elargol is needed to be affixed on TO base 1, then back light detector chip 3 is affixed on detection chip cushion block 5, then entirety is placed in baking oven and toasts elargol is solidified, thus reach the object of fixing back light detector, after this laser chip cushion block 4 and semiconductor laser chip 2 eutectic in the side of heat sink piece 8, after semiconductor laser chip 2 and back light detector chip 3 fixedly complete, need to carry out bonding with spun gold, thus the electrode realizing chip is drawn.Concrete back light detector chip 3 generally adopts photodiode chip and PD chip, semiconductor laser chip 2 generally adopts laser diode chip and LD chip, four pins 7 are through TO base 1, when carrying out gold wire bonding, two electrodes of PD chip, wherein a pole needs to be connected with pin Pin2 bonding, another pole needs to be connected with pin Pin3 bonding, here pin Pin2 and TO base paste the position of PD is electric isolution, in order to realize pin Pin2 in conventional package, the connection of Pin3 and PD, a detection chip cushion block and twice gold wire bonding is adopted to realize, can find out in this traditional TO-CAN encapsulated semiconductor laser from accompanying drawing 1, PD chip as back light detector passes through twice gold wire bonding and pin Pin2, Pin3 connects.After gold wire bonding completes, through burn-in test, this laser just can be used in optical fiber communication or Fibre Optical Sensor.

Above-mentioned encapsulation scheme and process are the main flows that current TO in the industry encapsulates, and also experienced by the test of engineer applied, have certain advantage and reasonability.But it is this as in the TO-CAN encapsulated semiconductor laser of industry main flow, with the structure that corresponding pin carries out being connected, following familiar lacunas is existed by twice gold wire bonding for the PD chip as back light detector: twice gold wire bonding is adopted to PD chip, cause bonding operation technique relatively complicated, and the application increased high cost spun gold, improve the cost of overall laser to a certain extent, reduce market competition advantage; And PD chip is needed to arrange detection chip cushion block specially install, not only complicated mounting process, and the fixing use elargol of detection chip cushion block and TO base, have the caducous risk of appearance, directly affects the quality stability of laser product.Therefore existing TO-CAN encapsulated semiconductor laser also exists certain defect in the configuration aspects that arranges of back light detector chip, still has improvable leeway.

Utility model content

The utility model is based on above-mentioned prior art problem, by long-term innovation experimental study, carry out innovating improving to this traditional TO-CAN encapsulated semiconductor laser, especially carried out innovating improving to the structure that arranges of wherein back light detector chip, by back light detector chip being installed on the brace table that is connected with pin Integral design, not only eliminate the setting of independent backlight detection chip cushion block, save cushion block Material Cost, and achieve chip be directly connected with the electrical of pin by being electrically directly connected of back light detector chip and brace table, eliminate a gold wire bonding technique between back light detector chip and its cushion block, simplify gold wire bonding operating procedure, and saved bonding gold wire cost, can not be come off with the brace table of pin Integral design risk simultaneously, improve stability in use and the market competitiveness of laser product.

It is as follows that the utility model solves the problems of the technologies described above taked technical scheme:

A kind of TO-CAN encapsulated semiconductor laser, comprise: TO base 1, semiconductor laser chip 2, back light detector chip 3, heat sink piece 8 and some pins 7, described heat sink piece 8 upper surface being arranged at described TO base 1, described semiconductor laser chip 2 is fixedly installed on the surface of described heat sink piece 8, described pin 7 insulation is fixed on described TO base 1, and the upper surface that the upper end of pin protrudes from described TO base 1 is arranged, a pin is connected with brace table 9 wherein, one end of described brace table is connected to the top protruding from TO base 1 upper surface of this pin, the other end extends to the below of semiconductor laser chip 2, described back light detector chip 3 is arranged on described brace table, and be in the below of described semiconductor laser chip 2.

Further according to TO-CAN encapsulated semiconductor laser described in the utility model, wherein be electrically connected at the electrode with back light detector chip and be connected with described brace table 9 on a pin of the vertical projected position of back light detector chip, and described brace table 9 integrally extends to form from the top protruding from TO base 1 upper surface of described pin, and be in same current potential with described pin.

Further according to TO-CAN encapsulated semiconductor laser described in the utility model, wherein said heat sink piece 8 upper surface being integrally formed at described TO base 1, described heat sink piece of 8 entirety have halfpace structure, comprise surface, outer, inner wall surface and surface, connection outer and the side surface of inner wall surface, described inner wall surface is perpendicular to the upper surface of described TO base 1.

Further according to TO-CAN encapsulated semiconductor laser described in the utility model, surface, wherein said outer is the face of cylinder, and described inner wall surface and side surface are plane, and the height of described heat sink piece is between 1.3mm-1.5mm.

Further according to TO-CAN encapsulated semiconductor laser described in the utility model, wherein also include laser chip cushion block 4, described laser chip cushion block 4 is fixedly installed in the inner wall surface of described heat sink piece 8, and described semiconductor laser chip 2 is fixedly installed on the surface of described laser chip cushion block 4.

Further according to TO-CAN encapsulated semiconductor laser described in the utility model, wherein said semiconductor laser chip 2 is LD chip, described back light detector chip 3 is PD chip, described LD chip eutectic is welded on the surface of described laser chip cushion block 4, described PD chip is fixed on described brace table 9 by conductive silver glue, two electrodes of described LD chip are electrically connected at wherein on two pins by bonding gold wire 6, an electrode of described PD chip is electrically connected at a pin by brace table 9, another electrode of described PD chip is electrically connected on another pin by bonding gold wire 6.

Further according to TO-CAN encapsulated semiconductor laser described in the utility model, the two-way bright dipping of wherein said LD chip and operation wavelength are at 1310nm or 1550nm.

Further according to TO-CAN encapsulated semiconductor laser described in the utility model, wherein said TO base 1 has circular configuration, described semiconductor laser chip 2 is on the circle central axis of TO base 1, and described back light detector chip 3 is in immediately below described semiconductor laser chip 2.

Further according to TO-CAN encapsulated semiconductor laser described in the utility model, wherein said TO base 1 is provided with manhole, described pin is fixed in described manhole by glass fixed bed 10 insulation through after described manhole.

Further according to TO-CAN encapsulated semiconductor laser described in the utility model, wherein said brace table 9 has rectangular structure, and width is at 0.4mm to 0.9mm, and length is at 1.0mm-1.6mm, and thickness is at 0.2mm-0.6mm.

At least following technique effect can be reached by the technical solution of the utility model:

1), the arrange structure of the utility model to back light detector chip in traditional TO-CAN encapsulated semiconductor laser has carried out innovating improving, by arranging its brace table on one of them connection pin of back light detector chip, eliminate the Material Cost of standalone probe chip cushion block, completely avoid the risk that conventional detection chip cushion block easily comes off, improve the stability of product;

2) on the brace table that what, the utility model was initiated be installed on back light detector chip is connected with pin Integral design, and achieve back light detector chip be directly connected with the electrical of corresponding pin by being electrically directly connected of back light detector chip and brace table, eliminate a gold wire bonding technique between back light detector chip and its cushion block, simplify gold wire bonding operating procedure, and save bonding gold wire cost;

3), TO-CAN encapsulated semiconductor laser described in the utility model belongs to the great innovation improvement to current TO-CAN encapsulated semiconductor laser, and compare with traditional TO encapsulated semiconductor laser, its external structure size and circuit pin can keep completely the same, new product will be used to impact to client, its improving technique and application can be good at matching with conventional package, thus laser described in the utility model is in reduction packaging technology, reduce material cost, to improve the quality of products and the aspect such as stability all has unique advantage, represent the brand-new developing direction of TO-CAN encapsulated semiconductor laser, there is wide marketing application prospect.

Accompanying drawing explanation

Accompanying drawing 1 is the structural representation of traditional TO-CAN encapsulated semiconductor laser.

Accompanying drawing 2 is the perspective view of TO-CAN encapsulated semiconductor laser described in the utility model.

Accompanying drawing 3 is the plan structure schematic diagram of accompanying drawing 2.

Accompanying drawing 4 is the structural representation of brace table in TO-CAN encapsulated semiconductor laser described in the utility model.

In figure, the implication of each Reference numeral is as follows:

1-TO base, 2-semiconductor laser chip, 3-back light detector chip, 4-laser chip cushion block, 5-detection chip cushion block, 6-bonding gold wire, 7-pin, 8-is heat sink piece, 9-brace table, 10-glass fixed bed.

Embodiment

Below in conjunction with accompanying drawing, the technical solution of the utility model is described in detail, to enable those skilled in the art clearly understand the utility model, but does not therefore limit protection range of the present utility model.

TO-CAN encapsulated semiconductor laser is as current widely used communication light source device, its structure is in continuous optimized development, the utility model is just based on long-term innovation experimental study, a kind of TO-CAN encapsulated semiconductor laser of brand new is proposed, substantially improve the combination property of TO-CAN encapsulated semiconductor laser, as shown in Figure 2, TO-CAN encapsulated semiconductor laser described in the utility model comprises TO base 1, semiconductor laser chip 2, back light detector chip 3, laser chip cushion block 4, bonding gold wire 6, pin 7, heat sink piece 8 and brace table 9, described TO base 1 is as the pedestal of whole laser, preferably there is circular configuration, heat sink piece 8 of sector structure is vertically equipped with at the upper surface of TO base 1, the structure of described heat sink piece 8 is preferably similar to a halfpace, surface, outer is the face of cylinder, inner wall surface is plane, the connection face of cylinder, outer and the interplanar side surface of inwall are also plane.The height of described heat sink piece is between 1.3mm-1.5mm, and preferred heights is 1.4mm, the described heat sink piece of iron work that heat conductivility can be adopted good, preferably also can to form as one structure with TO base 1.Be fixedly installed laser chip cushion block 4 the inner wall surface of described heat sink piece 8, described laser chip cushion block 4 weld, bonding or be integrally formed in the inner wall surface of heat sink piece 8.The surface of described laser chip cushion block 4 is fixed with semiconductor laser chip 2, described semiconductor laser chip 2 is laser diode chip and LD chip preferably, the preferred eutectic of described LD chip is welded in the surface of laser chip cushion block 4, eutectic welding is also metal alloy solder, refer to that eutectic discloses the phenomenon occurring to fuse for brilliant thing at relatively low temperature, eutectic alloy directly changes to liquid state from solid-state, and without the plastic stage, here alloy melting temperature claims eutectic temperature, the utility model eutectic material used is gold-tin alloy, its fusion temp is between 270 degree to 320 degree, adopt eutectic welding manner not only can ensure that LD chip is very firmly fixed on laser chip cushion block 4, and can ensure that LD chip is in fixed positions ideal very accurately, preferred in TO-CAN encapsulated semiconductor laser described in the utility model, on the central axis that LD chip is in circular TO base 1 (on circle central axis), LD chip light-emitting face can be, but not limited to be positioned in the focus of the lens optical system be fixed on TO base.Described LD chip is connected on corresponding pin by gold wire bonding technical battery after eutectic completes, the electrode that bonding gold wire two ends are connected to LD chip (can refer to accompanying drawing 1 with the corresponding pin protruding from TO base surface, omit the bonding gold wire of the LD chip of identical setting in fig 2), gold wire bonding temperature controls at about 120 degree, and gold wire bonding tension intensity is greater than 5 grams.Described pin 7 is arranged through TO base 1, concrete at least comprises 3 pins, just comprise semiconductor laser chip 2, negative pin and back light detector chip 3 are just, negative pin, on described TO base 1, some manholes (preferred size is diameter 1mm) are offered corresponding to each pin, each pin is through being fixed in the manhole of TO base 1 after the manhole of TO base, and ensure to be electrically insulated between each pin 7 and TO base, the preferred glass fixed bed 10 being sealed with insulation between pin 7 and the manhole inwall of TO base 1, thus while each pin is firmly secured on TO base, ensure each pin and be all that relative electricity is every vertical between TO base and miscellaneous part.Each pin is as Pin1, Pin2 and Pin3 is arranged around the center of circle of described TO base 1, and the upper surface that the upper end of each pin protrudes from TO base is arranged, a pin wherein of the utility model innovation, preferably be connected to back light detector chip and be provided with brace table 9 on one of them pin Pin3 of back light detector chip, described brace table 9 is arranged at the position protruding from TO base upper surface of pin Pin3, as shown in Figure 2-4, the size of described brace table 9 is more flexible, if the support of sufficient intensity can be provided to back light detector chip 3 and size when being placed in TO base again can not and other location contacts of TO base, preferred described brace table entirety has rectangular structure, overall width is at 0.4mm to 0.9mm, entire length is at 1.0mm-1.6mm, thickness is 0.2mm-0.6mm, the leading section of preferred described brace table is formed as square structure, rearward end is formed as circular configuration, supporting surface width is preferably 0.5mm, 0.6mm, or 0.8mm, portion is formed with manhole to rounded back end, Pin3 pin is fixed in described manhole, square left hand edge is preferably 1.20mm to the size in the Pin3 pin center of circle, 1.25mm, or 1.30mm, brace table thickness is preferably 0.2mm, 0.3mm, or 0.4mm.Described brace table and pin are electrically connected, preferred described brace table is integrally formed at the top of pin, namely preferred by with want back light detector chip to be connected and one is extended in the part of outstanding TO base upper surface forms described brace table 9 near one of them pin Pin3 of back light detector chip, as shown in Figure 4.Described brace table 9 is fixed with back light detector chip 3, described back light detector chip 3 is photodiode chip and PD chip preferably, described PD chip is fixed on brace table 9 by conductive silver glue, described brace table extends to the below of laser chip cushion block 4 from pin Pin3 place, to ensure that described PD chip is in immediately below LD chip, as shown in Figure 3.By being wholely set described brace table with pin, and on brace table, paste back light detector chip, thus the detection chip cushion block that instead of in original encapsulating structure, brace table and pin are one simultaneously, belong to the some of pin Pin3, employing metal material makes and surface is coated with one deck thin gold reinforcement conduction outside, because pin and base and miscellaneous part electric isolution, therefore described brace table is not before carrying out gold wire bonding, also with TO base and the relative electric isolution of miscellaneous part, and when back light detector chip attach is on brace table, an electrode of described back light detector chip to be achieved with a pin by brace table and is electrically connected, such back light detector chip only needs to be connected with another one pin by a bonding gold wire, relative to conventional package scheme, not only eliminate detection chip cushion block, and eliminate a bonding gold wire, while reducing costs, ensure that the installation stability of back light detector chip.Described brace table can be arranged on any one pin of carrying out with the electrode of back light detector chip being connected, as being arranged on Pin1, Pin2 or the Pin3 in accompanying drawing 2, preferably near the pin that back light detector chip 3 electrode is arranged, for Pin3 in accompanying drawing 2.Described TO-CAN encapsulated semiconductor laser is when being energized, semiconductor laser chip is Emission Lasers under current drives, its wavelength can be 1310nm, 1550nm and other, the LD chip of described semiconductor laser chip preferably two-way bright dipping, the forward bright dipping of LD chip is outwards launched, back light detector chip (PD chip) is arranged at LD chip dorsad, its effect is the size of monitoring LD chip light emitting power, and its testing result is passed back external control circuit in real time, thus control feedback is provided, the luminescence of automatic adjustment LD chip is strong and weak, LD chip is worked continually and steadily and do not introduce error code in optical fiber communication and sensing.

Consistent with conventional package of the external structure size of TO-CAN encapsulated semiconductor laser described in the utility model and interface, client can be convenient to use and do not need to improve circuit and external dimensions, added burden is not caused to client, especially for the TO56 encapsulated laser of extensive use, external dimensions can be constant.TO-CAN encapsulated semiconductor laser provided by the utility model, Material Cost has been saved by saving detection chip cushion block, decrease a cushion block technique for sticking and gold wire bonding technique simultaneously, greatly product cost can be reduced to the minimizing of spun gold application, and brace table and pin are whole, avoid the risk producing and come off, therefore described TO-CAN encapsulated semiconductor laser represents the developing direction of TO encapsulated semiconductor laser of future generation, can large-scale application among optical fiber communication and Fibre Optical Sensor.

Below be only that preferred implementation of the present utility model is described; the technical solution of the utility model is not limited to this; the any known distortion that those skilled in the art do on the basis that major technique of the present utility model is conceived all belongs to the claimed technology category of the utility model, and the concrete protection range of the utility model is as the criterion with the record of claims.

Claims

1. a TO-CAN encapsulated semiconductor laser, it is characterized in that, comprise: TO base (1), semiconductor laser chip (2), back light detector chip (3), heat sink piece (8) and some pins (7), described heat sink piece (8) are arranged at the upper surface of described TO base (1), described semiconductor laser chip (2) is fixedly installed on the surface of described heat sink piece (8), described pin (7) insulation is fixed on described TO base (1), and the upper surface that the upper end of pin protrudes from described TO base (1) is arranged, a pin is connected with brace table (9) wherein, one end of described brace table is connected to the top protruding from TO base (1) upper surface of this pin, the other end extends to the below of semiconductor laser chip (2), described back light detector chip (3) is arranged on described brace table, and be in the below of described semiconductor laser chip (2).

2. TO-CAN encapsulated semiconductor laser according to claim 1, it is characterized in that, be electrically connected at the electrode with back light detector chip and be connected with described brace table (9) on a pin of the vertical projected position of back light detector chip, and described brace table (9) integrally extends to form from the top protruding from TO base (1) upper surface of described pin, and be in same current potential with described pin.

3. TO-CAN encapsulated semiconductor laser according to claim 1, it is characterized in that, described heat sink piece (8) are integrally formed at the upper surface of described TO base (1), described heat sink piece of (8) entirety has halfpace structure, comprise surface, outer, inner wall surface and surface, connection outer and the side surface of inner wall surface, described inner wall surface is perpendicular to the upper surface of described TO base (1).

4. TO-CAN encapsulated semiconductor laser according to claim 3, is characterized in that, surface, described outer is the face of cylinder, and described inner wall surface and side surface are plane, and the height of described heat sink piece is between 1.3mm-1.5mm.

5. TO-CAN encapsulated semiconductor laser according to claim 3, it is characterized in that, also include laser chip cushion block (4), described laser chip cushion block (4) is fixedly installed in the inner wall surface of described heat sink piece (8), and described semiconductor laser chip (2) is fixedly installed on the surface of described laser chip cushion block (4).

6. TO-CAN encapsulated semiconductor laser according to claim 5, it is characterized in that, described semiconductor laser chip (2) is LD chip, described back light detector chip (3) is PD chip, described LD chip eutectic is welded on the surface of described laser chip cushion block (4), described PD chip is fixed on described brace table (9) by conductive silver glue, two electrodes of described LD chip are electrically connected at wherein on two pins by bonding gold wire (6), an electrode of described PD chip is electrically connected at a pin by brace table (9), another electrode of described PD chip is electrically connected on another pin by bonding gold wire (6).

7. TO-CAN encapsulated semiconductor laser according to claim 6, is characterized in that, the two-way bright dipping of described LD chip and operation wavelength are at 1310nm or 1550nm.

8. TO-CAN encapsulated semiconductor laser according to claim 1, it is characterized in that, described TO base (1) has circular configuration, described semiconductor laser chip (2) is on the circle central axis of TO base (1), and described back light detector chip (3) is in immediately below described semiconductor laser chip (2).

9. TO-CAN encapsulated semiconductor laser according to claim 1, is characterized in that, described TO base (1) is provided with manhole, and described pin is fixed in described manhole by glass fixed bed (10) insulation through after described manhole.

10. the TO-CAN encapsulated semiconductor laser according to any one of claim 1-9, it is characterized in that, described brace table (9) has rectangular structure, width is at 0.4mm to 0.9mm, and length is at 1.0mm-1.6mm, and thickness is at 0.2mm-0.6mm.