CN204696909U - A kind of IGBT module driving power - Google Patents
A kind of IGBT module driving power Download PDFInfo
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- CN204696909U CN204696909U CN201520419475.4U CN201520419475U CN204696909U CN 204696909 U CN204696909 U CN 204696909U CN 201520419475 U CN201520419475 U CN 201520419475U CN 204696909 U CN204696909 U CN 204696909U
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- power supply
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000003990 capacitor Substances 0.000 claims description 21
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000004804 winding Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
The utility model relates to a kind of IGBT module driving power, comprise power conversion circuit, transformer, two-way driving power, auxiliary low pressure power supply and feedback control unit, power conversion circuit is connected with the former limit parallel connection of transformer, again by metal-oxide-semiconductor M1 ground connection, the pwm pulses that feedback control unit produces controls the control end of metal-oxide-semiconductor M1, two-way driving power, auxiliary low pressure power supply is connected with the secondary of transformer, and auxiliary low pressure power supply exports the control end that the pwm pulses produced through feedback control unit controls metal-oxide-semiconductor M1.The technology difficulty reducing transformer reduces volume and the number of pins of transformer, adds creepage distance and electric clearance, simplifies PCB layout; Simplify the transformer device structure of IGBT driving power, the leakage inductance reducing transformer makes the consistency of 2 road driving voltage precision better.The functional reliability of effective raising IGBT, prevents from damaging IGBT module.
Description
Technical field
The utility model relates to a kind of frequency converter field, particularly a kind of IGBT module driving power.
Background technology
IGBT-insulated gate transistor is high by its operating voltage, and operating current is large, and switching frequency is high, the simple electronic power switch element having become medium-and-large-sized power inverter field at present and be most widely used of drive circuit.IGBT module is because of the multiple IGBT monomer of its enclosed inside, and volume is little, and power density is high, is easy to assemble the first-selection being more and more subject to transducer power element.As IGBT module in vehicle-mounted three phase full bridge frequency converter, generally all encapsulate and there are 2 or 6 IGBT monomers.
Current most drive integrated circult is all the mode adopting isolation drive, and in isolation, magnetic element is low because of its cost, reacts and is used in a large number soon.The driving power of IGBT module uses multichannel flyback topologies, and anti exciting converter input range is wide, simply therefore circuit uses extensively in IGBT module driving power.
Fig. 1 is the IGBT driving power of existing a pair 6, and a transformer drives and provides 6 IGBT driving powers.Because the reliable switch of each IGBT needs 2 road driving powers, wherein a road positive supply is open-minded for IGBT, and a road negative supply is used for reliable turn-off IGBT.6 minimum needs of IGBT, 4 groups of positive-negative powers, wherein one group of power supply uses 1 road winding, 2 transformer PIN, adds and at least needs 20 PIN for what feed back with winding transformer of excitation.Make the winding quantity of switching mode power supply transformer increase like this, complex process, volume is comparatively large, and number of pins is more thus cause electric clearance and creepage distance to reduce reliability reducing.Due to the circuit board in reality layout and walk this power supply in line process and be fixed on a place and cause and be vulnerable to interference and in safety, there is high-low pressure signal from the IGBT driving power supply line cabling away from power supply is longer simultaneously to interlock routing problem.Many powerful IGBT modules are had now only to encapsulate 2 IGBT monomers in addition so only need 2 road driving powers just to cause the waste of this driving power.
Flyback transformer leakage inductance is very large on output voltage impact, due to the complex structure of transformer, be difficult to the consistency of the leakage inductance ensureing transformer in process of production, the consistency of 4 groups of driving power output voltages reduced greatly, affects the reliability of the work of whole frequency converter.
Summary of the invention
The utility model is for existing IGBT driving power Problems existing, propose a kind of IGBT module driving power, a transformer is adopted to have 2 groups of outputs, and often organize output and there is centre tapped winding export 2 road positive-negative powers simultaneously, drive upper and lower bridge IGBT, make that the structure of transformer is simple, reliability is strong, the voltage accuracy improving driving power simultaneously, can be used in again in the frequency converter of only encapsulation 2 IGBT monomers in IGBT module and use flexibly.
The technical solution of the utility model is: a kind of IGBT module driving power, comprise power conversion circuit, transformer, two-way driving power, auxiliary low pressure power supply and feedback control unit, power conversion circuit is connected with the former limit parallel connection of transformer, again by metal-oxide-semiconductor M1 ground connection, the pwm pulses that feedback control unit produces controls the control end of metal-oxide-semiconductor M1, two-way driving power, auxiliary low pressure power supply is connected with the secondary of transformer, and auxiliary low pressure power supply exports the control end that the pwm pulses produced through feedback control unit controls metal-oxide-semiconductor M1.
Described two-way positive and negative driving power circuit, every road comprises two diodes, two filter capacitors and two load resistances, first filter capacitor and the parallel connection of the first load resistance, the positive pole of the first filter capacitor connects the first diode cathode, first diode anode is connected with the secondary first different name end pin of transformer, and the negative pole of the first filter capacitor connects the centre cap of transformer secondary first coil; Second filter capacitor and the parallel connection of the second load resistance, the negative pole of the second filter capacitor connects the second diode anode, second diode cathode is connected with the secondary second different name end pin of transformer, the centre cap of cathode connecting transformer secondary first coil of the second filter capacitor.
The beneficial effects of the utility model are: the utility model IGBT module driving power, and the technology difficulty reducing transformer reduces volume and the number of pins of transformer, adds creepage distance and electric clearance, simplifies PCB layout; Simplify the transformer device structure of IGBT driving power, the leakage inductance reducing transformer makes the consistency of 2 road driving voltage precision better.The functional reliability of effective raising IGBT, prevents from damaging IGBT module.
Accompanying drawing explanation
Fig. 1 is the circuit theory diagrams of IGBT driving power of the prior art;
Fig. 2 is utility model IGBT module driving power theory diagram;
Fig. 3 is the circuit theory diagrams of utility model IGBT module driving power.
Embodiment
IGBT module driving power theory diagram, comprises power conversion circuit as shown in Figure 2, transformer, two-way driving power, auxiliary low pressure power supply and feedback control unit; Described power conversion circuit is connected with the former limit of transformer, two-way driving power, and auxiliary low pressure power supply is connected with the secondary of transformer, and auxiliary low pressure power supply exports and feeds back to power conversion circuit through feedback control unit.
The circuit theory of the utility model IGBT module driving power is as follows as shown in Figure 3:
Power conversion circuit is connected with the former limit parallel connection of transformer, then by metal-oxide-semiconductor M1 ground connection, the pwm pulses that feedback control unit produces controls the control end of metal-oxide-semiconductor M1, and controller cut-offs, thus controls power conversion circuit input direct voltage.When M1 opens in transformer primary side storage power, when M1 turns off, the energy of storage is sent to the secondary of transformer, after rectifying and wave-filtering, obtains required voltage; The Voltage Feedback that FEEDBACK CONTROL chip gathers auxiliary low pressure power supply returns PWM control integration circuit chip UCC28C41, regulates the duty ratio of M1 to reach the object of stable two-way driving voltage.Two-way positive and negative driving power circuit: comprise diode D1, D2 filter capacitor C1, C3 load resistance R1, R2.
Diode D1 anode is connected with secondary different name end 1 pin of transformer, and positive pole and the load resistance R1 of negative electrode and filter capacitor C1 are connected.
Diode D2 anode is connected with secondary different name end 3 pin of transformer, and negative pole and the load resistance R2 of negative electrode and filter capacitor C3 are connected.
Positive pole, resistance R1, the resistance R2 of the Center tap pins 2 of transformer and the negative pole of filter capacitor C1, filter capacitor C3 are connected.
When former limit MOS M1 turns off, the Energy transfer that transformer stores is to the winding of secondary transformer.Lead up to: transformer N2a winding 1 pin → D1 → R1 → N2a winding 2 pin forms positive driving power, and electrochemical capacitor C1 reduces power supply ripple.
Separately lead up to: transformer N2b winding 2 pin → R2 → D2 forms negative driving power, and electrochemical capacitor C3 reduces power supply ripple.
Feedback voltage feeds back to control chip IC1, after control chip calculates control M1 duty ratio thus ensure the voltage magnitude of positive and negative driving power.Winding N3a, N3b operation principle is identical with N2a, N2b.
Claims (2)
1. an IGBT module driving power, it is characterized in that, comprise power conversion circuit, transformer, two-way driving power, auxiliary low pressure power supply and feedback control unit, power conversion circuit is connected with the former limit parallel connection of transformer, again by metal-oxide-semiconductor M1 ground connection, the pwm pulses that feedback control unit produces controls the control end of metal-oxide-semiconductor M1, two-way driving power, auxiliary low pressure power supply are connected with the secondary of transformer, and auxiliary low pressure power supply exports the control end that the pwm pulses produced through feedback control unit controls metal-oxide-semiconductor M1.
2. IGBT module driving power according to claim 1, it is characterized in that, described two-way positive and negative driving power circuit, every road comprises two diodes, two filter capacitors and two load resistances, the first filter capacitor and the parallel connection of the first load resistance, the positive pole of the first filter capacitor connects the first diode cathode, first diode anode is connected with the secondary first different name end pin of transformer, and the negative pole of the first filter capacitor connects the centre cap of transformer secondary first coil; Second filter capacitor and the parallel connection of the second load resistance, the negative pole of the second filter capacitor connects the second diode anode, second diode cathode is connected with the secondary second different name end pin of transformer, the centre cap of cathode connecting transformer secondary first coil of the second filter capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520419475.4U CN204696909U (en) | 2015-06-17 | 2015-06-17 | A kind of IGBT module driving power |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520419475.4U CN204696909U (en) | 2015-06-17 | 2015-06-17 | A kind of IGBT module driving power |
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| CN204696909U true CN204696909U (en) | 2015-10-07 |
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| CN201520419475.4U Active CN204696909U (en) | 2015-06-17 | 2015-06-17 | A kind of IGBT module driving power |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106849649A (en) * | 2016-12-29 | 2017-06-13 | 江苏中科君芯科技有限公司 | The IGBT driving power supplies topology of regulation can be independently set |
| CN107888054A (en) * | 2017-11-20 | 2018-04-06 | 山东超越数控电子股份有限公司 | A kind of design method of multichannel isolation circuit output driving power supply |
| CN108964646A (en) * | 2018-07-17 | 2018-12-07 | 武昌首义学院 | Function-integrated edge modulation IGBT/MOS driving system |
| CN111357179A (en) * | 2019-07-24 | 2020-06-30 | 深圳欣锐科技股份有限公司 | Bridge type silicon carbide field effect tube driving circuit |
-
2015
- 2015-06-17 CN CN201520419475.4U patent/CN204696909U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106849649A (en) * | 2016-12-29 | 2017-06-13 | 江苏中科君芯科技有限公司 | The IGBT driving power supplies topology of regulation can be independently set |
| CN107888054A (en) * | 2017-11-20 | 2018-04-06 | 山东超越数控电子股份有限公司 | A kind of design method of multichannel isolation circuit output driving power supply |
| CN108964646A (en) * | 2018-07-17 | 2018-12-07 | 武昌首义学院 | Function-integrated edge modulation IGBT/MOS driving system |
| CN108964646B (en) * | 2018-07-17 | 2022-05-13 | 武昌首义学院 | Function-integrated edge modulation IGBT/MOS driving system |
| CN111357179A (en) * | 2019-07-24 | 2020-06-30 | 深圳欣锐科技股份有限公司 | Bridge type silicon carbide field effect tube driving circuit |
| CN111357179B (en) * | 2019-07-24 | 2023-08-11 | 深圳欣锐科技股份有限公司 | Bridge type silicon carbide field effect transistor driving circuit |
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