CN204538172U - A kind of substrate integration wave-guide chamber with multiple response - Google Patents
A kind of substrate integration wave-guide chamber with multiple response Download PDFInfo
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- CN204538172U CN204538172U CN201520291905.9U CN201520291905U CN204538172U CN 204538172 U CN204538172 U CN 204538172U CN 201520291905 U CN201520291905 U CN 201520291905U CN 204538172 U CN204538172 U CN 204538172U
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Abstract
The utility model discloses a kind of substrate integration wave-guide chamber with multiple response, its structure comprises substrate integration wave-guide chamber, perturbation disposed thereon and input/output end port, described substrate integration wave-guide chamber is by the various combination of perturbation and input/output end port, generate the response of multifrequency nature, multiple transmission zero just can be introduced at lower sideband respectively or simultaneously in single chamber, the filter formed after cascade, the devices such as duplexer can obtain enough flexible design degree, precipitous sideband characteristic, good belt resistance inhibitor system, and structure is simple, design easily, adopt similar structure just can obtain and adopt all unapproachable performance of various structures in the past.
Description
Technical field
The utility model relates to substrate integrated waveguide technology field, particularly a kind of substrate integration wave-guide chamber with multiple response being applied to the design of microwave and millimeter wave device circuitry.
Background technology
Resonator is the basic composition unit of numerous microwave and millimeter wave circuit devcies such as filter, duplexer, multiplexer, and the performance of resonator has important impact to the final every characteristic forming device.Resonator based on metal waveguide has the advantage such as high q-factor, high power capacity, but its cost is high, bulky, and is difficult to integrated; Resonator cost based on the planar circuit technology such as microstrip line, co-planar waveguide is low, volume is little, and is easy to integrated, but there is the problems such as Q value is lower, radiation, crosstalk, and the higher problem of frequency is more serious; Resonator based on substrate integration wave-guide then effectively combines both advantage, has excellent electrical characteristics concurrently, is easy to the advantage such as Planar integration and low cost.
Existing substrate integration wave-guide resonator is in band while superior performance, but there is many deficiencies in its band external characteristic, be difficult at band outer introducing sufficient amount and flexible and changeable transmission zero, be unfavorable for the raising of the performances such as the device such as filter, duplexer sideband, stopband, isolation.Even if existing technology can realize available transmission zero at lower sideband, also all have that design is complicated, transmission zero number is less, cannot by problems such as single structure realizations.
Utility model content
For solving Problems existing in above-mentioned background technology, the purpose of this utility model is to provide a kind of substrate integration wave-guide chamber with multiple response, use similar structure can introduce multiple transmission zero controlled flexibly at lower sideband, while the superior band internal characteristic of acquisition, significantly improve the performances such as the device such as filter, duplexer sideband, stopband, isolation, and reduce structure complexity and design difficulty.
For achieving the above object, the technical solution of the utility model is as follows:
A kind of substrate integration wave-guide chamber with multiple response, its structure comprises substrate integration wave-guide chamber, perturbation disposed thereon and input/output end port, described substrate integration wave-guide chamber, by the various combination of perturbation and input/output end port, generates the response of at least three kinds of characteristics.
Preferably, described substrate integration wave-guide chamber is being arranged on the dielectric substrate in substrate integration wave-guide by structure that the array of upper and lower surface metal and metal throuth hole surrounds jointly.
Preferably, described substrate integration wave-guide cavity shape is set to square, circular or polygon.
Preferably, described perturbation is set to single through hole or multiple through hole, and described through hole is concentrated or scattering device, and described shape of through holes is set to circular or square.
Preferably, described input/output end port is set to microstrip line construction, coplanar waveguide structure or substrate integrated wave guide structure.
Preferably, described input/output end port is set to orthogonal placement or angle presentation placement.
Preferably, described metal throuth hole can be substituted by metallic channel.
Pass through technique scheme, the utility model provides a kind of substrate integration wave-guide chamber with multiple response, by the various combination of perturbation and input/output end port, generate the response of multifrequency nature, multiple transmission zero just can be introduced at lower sideband respectively or simultaneously in single chamber, the devices such as the filter formed after cascade, duplexer can obtain enough flexible design degree, precipitous sideband characteristic, good belt resistance inhibitor system, and structure is simple, design is easy, adopts similar structure just can obtain and adopts all unapproachable performance of various structures in the past.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below.
Fig. 1 is the structural representation disclosed in the utility model embodiment;
Fig. 2, Fig. 3 are the geometric parameter schematic diagram disclosed in the utility model embodiment two and corresponding frequency response curve;
Fig. 4, Fig. 5 are the geometric parameter schematic diagram disclosed in the utility model embodiment three and corresponding frequency response curve;
Fig. 6, Fig. 7 are the geometric parameter schematic diagram disclosed in the utility model embodiment four and corresponding frequency response curve;
Fig. 8, Fig. 9 are the geometric parameter schematic diagram disclosed in the utility model embodiment five and corresponding frequency response curve;
Figure 10, Figure 11 are the geometric parameter schematic diagram disclosed in the utility model embodiment six and corresponding frequency response curve;
Figure 12, Figure 13 are the geometric parameter schematic diagram disclosed in the utility model embodiment seven and corresponding frequency response curve;
Figure 14, Figure 15 are the geometric parameter schematic diagram disclosed in the utility model embodiment eight and corresponding frequency response curve;
Figure 16, Figure 17 are the geometric parameter schematic diagram disclosed in the utility model embodiment nine and corresponding frequency response curve;
Figure 18, Figure 19 are the geometric parameter schematic diagram disclosed in the utility model embodiment ten and corresponding frequency response curve
Figure 20, Figure 21 are the geometric parameter schematic diagram disclosed in the utility model embodiment 11 and corresponding frequency response curve;
Figure 22, Figure 23 are the geometric parameter schematic diagram disclosed in the utility model embodiment 12 and corresponding frequency response curve;
Figure 24, Figure 25 are the geometric parameter schematic diagram disclosed in the utility model embodiment 13 and corresponding frequency response curve;
Figure 26, Figure 27 are the geometric parameter schematic diagram disclosed in the utility model embodiment 14 and corresponding frequency response curve.
In figure, number designation represents the title of parts:
1, substrate integration wave-guide chamber 2, perturbation
3, input/output end port 4, metal throuth hole
5, dielectric substrate
Embodiment
Below by specific embodiment, every advantage of the present utility model is described, the medium that each example adopts is Rogers 5880 sheet material of 0.508mm thickness, the through-hole diameter of composition through hole fence is 0.5mm, micro belt line width is 1.54mm, co-planar waveguide width is 1.47mm, and substrate integration wave-guide width is 5.5mm, and less circular perturbation diameter is 0.5mm, larger circular perturbation diameter is 1mm, and the square perturbation length of side is 0.5mm.
Embodiment one:
A kind of substrate integration wave-guide chamber with multiple response that the utility model provides, as shown in Figure 1, its structure comprises substrate integration wave-guide chamber 1, perturbation 2 disposed thereon and input/output end port 3, perturbation 2 is set to single through hole or multiple through hole, through hole is concentrated or scattering device, shape of through holes can be set to circular or square, or other shape that professional and technical personnel in the field are easy-to-use; Input/output end port 3 is set to microstrip line construction, coplanar waveguide structure or substrate integrated wave guide structure, or easy-to-use other of professional and technical personnel in the field is guided wave structure formed, and input/output end port 3 is set to orthogonal placement or angle presentation is placed.Substrate integration wave-guide chamber 1 is by structure that the array of upper and lower surface metal and metal throuth hole 4 surrounds jointly on the dielectric substrate 5 be arranged in substrate integration wave-guide, substrate integration wave-guide chamber 1 is by the various combination of perturbation 2 with input/output end port 3, generate the response of at least three kinds of characteristics, multiple transmission zero is introduced respectively or simultaneously at lower sideband, the shape in substrate integration wave-guide chamber 1 can be set to square, circular or polygon, or other shape that professional and technical personnel in the field are easy-to-use.
Embodiment two:
A kind of substrate integration wave-guide chamber with multiple response that the utility model provides, single substrate integration wave-guide chamber realizes multiple lower sideband transmission zero, as Fig. 2, shown in Fig. 3, adopt square substrate integrated waveguide chamber, input/output end port adopts the orthogonal thereto placement of microstrip line, port lines all departs from Central Symmetry position, for simplified design, port lines is put about chamber skew symmetry, a circular perturbation is had to be in symmetric position, 2 lower sideband transmission zeros and 1 upper sideband zero point is achieved eventually through chamber, single substrate integration wave-guide side, typical bimodulus resonance response is belonged in passband.
Embodiment three:
A kind of substrate integration wave-guide chamber with multiple response that the utility model provides, single substrate integration wave-guide chamber realizes multiple upper sideband transmission zero, as shown in Figure 4, Figure 5, adopt square substrate integrated waveguide chamber, input/output end port adopts the orthogonal thereto placement of microstrip line, and one of them port lines departs from Central Symmetry position, has the perturbation that circular, achieve 3 upper sideband transmission zeros eventually through chamber, single substrate integration wave-guide side, in passband, belong to typical bimodulus resonance response.
Embodiment four:
A kind of substrate integration wave-guide chamber with multiple response that the utility model provides, single substrate integration wave-guide chamber realizes accurate ellipse response, as shown in Figure 6, Figure 7, adopt square substrate integrated waveguide chamber, input/output end port adopts the orthogonal thereto placement of microstrip line, and one of them port lines departs from Central Symmetry position, has the perturbation that circular, achieve accurate ellipse response eventually through chamber, single substrate integration wave-guide side, in passband, belong to typical bimodulus resonance response.
Embodiment five:
A kind of substrate integration wave-guide chamber with multiple response that the utility model provides, single substrate integration wave-guide chamber realizes multiple lower sideband transmission zero, as shown in Figure 8, Figure 9, adopt circular substrate integrated waveguide chamber, input/output end port adopts microstrip line and presents certain angle, there is the perturbation that circular, achieve 2 lower sideband transmission zeros eventually through single substrate integration wave-guide cylindrical cavity, in passband, belong to typical bimodulus resonance response.
Embodiment six:
A kind of substrate integration wave-guide chamber with multiple response that the utility model provides, single substrate integration wave-guide chamber realizes multiple upper sideband transmission zero, as shown in Figure 10, Figure 11, adopt circular substrate integrated waveguide chamber, input/output end port adopts microstrip line and presents certain angle, there is the circular perturbation of two different sizes, achieve 2 upper sideband transmission zeros eventually through single substrate integration wave-guide cylindrical cavity, in passband, belong to typical bimodulus resonance response.
Embodiment seven:
A kind of substrate integration wave-guide chamber with multiple response that the utility model provides, single substrate integration wave-guide chamber realizes multiple upper sideband transmission zero, as shown in Figure 12 and Figure 13, adopt circular substrate integrated waveguide chamber, input/output end port adopts co-planar waveguide and presents certain angle, there is a circular perturbation, achieve accurate ellipse response eventually through single substrate integration wave-guide cylindrical cavity, in passband, belong to typical bimodulus resonance response.
Embodiment eight:
A kind of substrate integration wave-guide chamber with multiple response that the utility model provides, single substrate integration wave-guide chamber realizes multiple lower sideband transmission zero, as shown in Figure 14, Figure 15, adopt circular substrate integrated waveguide chamber, input/output end port adopts substrate integration wave-guide and presents certain angle, there is a circular perturbation, achieve 2 lower sideband transmission zeros eventually through single substrate integration wave-guide cylindrical cavity, in passband, belong to typical bimodulus resonance response.
Embodiment nine:
A kind of substrate integration wave-guide chamber with multiple response that the utility model provides, single substrate integration wave-guide chamber realizes accurate ellipse response, as shown in Figure 16, Figure 17, adopt circular substrate integrated waveguide chamber, input/output end port adopts substrate integration wave-guide and presents certain angle, there is the circular perturbation of two different sizes, achieve accurate ellipse response eventually through single substrate integration wave-guide cylindrical cavity, in passband, belong to typical bimodulus resonance response.
Embodiment ten:
A kind of substrate integration wave-guide chamber with multiple response that the utility model provides, single substrate integration wave-guide chamber realizes multiple lower sideband transmission zero, as shown in Figure 18, Figure 19, adopt octagon substrate integration wave-guide chamber, input/output end port adopts microstrip line and presents certain angle, there is a square perturbation, achieve 2 lower sideband transmission zeros eventually through single substrate integration wave-guide octagon chamber, in passband, belong to typical bimodulus resonance response.
Embodiment 11:
A kind of substrate integration wave-guide chamber with multiple response that the utility model provides, the filter of two substrate integration wave-guide chamber cascades has extremely precipitous lower side-band characteristic, as shown in Figure 20, Figure 21, the direct cascade in chamber, two substrate integration wave-guide sides, input/output end port adopts microstrip line to be parallel placement, there are 2 circular perturbations, achieve the filter with extremely precipitous lower side-band characteristic eventually through the chamber cascade of two substrate integration wave-guide sides, in passband, have 4 transmission poles.
Embodiment 12:
A kind of substrate integration wave-guide chamber with multiple response that the utility model provides, the filter of two substrate integration wave-guide chamber cascades has extremely precipitous upper sideband characteristic, as shown in Figure 22, Figure 23, chamber, two substrate integration wave-guide sides is by one section of substrate integration wave-guide cascade, input/output end port adopts microstrip line to be parallel placement, there are 2 circular perturbations, achieve the filter with extremely precipitous upper sideband characteristic eventually through the chamber cascade of two substrate integration wave-guide sides, in passband, have 4 transmission poles.
Embodiment 13:
A kind of substrate integration wave-guide chamber with multiple response that the utility model provides, the filter of two substrate integration wave-guide chamber cascades has accurate ellipse response, as shown in Figure 24, Figure 25, the direct cascade in chamber, two substrate integration wave-guide sides, input/output end port adopts microstrip line to be parallel placement, there are 2 circular perturbations, achieve the quasi-elliptic filters with precipitous lower sideband eventually through the chamber cascade of two substrate integration wave-guide sides.
Embodiment 14:
A kind of substrate integration wave-guide chamber with multiple response that the utility model provides, the duplexer of four substrate integration wave-guide chamber compositions has the advantageous characteristic such as precipitous lower sideband, high-isolation, as shown in Figure 26, Figure 27, its structure forms primarily of chamber, four substrate integration wave-guide sides, input/output end port adopts microstrip line to be parallel placement, there are 4 circular perturbations, the high channel of final realization has extremely precipitous lower side-band characteristic, low pass road has extremely precipitous upper sideband characteristic, and interchannel has very high isolation.
Metal throuth hole described in above-described embodiment can be substituted by metallic channel, and the utility model embodiment does not do any restriction.
A kind of substrate integration wave-guide chamber with multiple response disclosed in the utility model, by the various combination of perturbation and input/output end port, generate the response of multifrequency nature, multiple transmission zero just can be introduced at lower sideband respectively or simultaneously in single chamber, the devices such as the filter formed after cascade, duplexer can obtain enough flexible design degree, precipitous sideband characteristic, good belt resistance inhibitor system, and structure is simple, design is easy, adopts similar structure just can obtain and adopts all unapproachable performance of various structures in the past.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the utility model.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein when not departing from spirit or scope of the present utility model, can realize in other embodiments.Therefore, the utility model can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (7)
1. one kind has the substrate integration wave-guide chamber of multiple response, it is characterized in that: its structure comprises substrate integration wave-guide chamber (1), perturbation disposed thereon (2) and input/output end port (3), described substrate integration wave-guide chamber (1), by the various combination of perturbation (2) with input/output end port (3), generates the response of at least three kinds of characteristics.
2. a kind of substrate integration wave-guide chamber with multiple response according to claim 1, is characterized in that: described substrate integration wave-guide chamber (1) is being arranged on the dielectric substrate in substrate integration wave-guide (5) by structure that the array of upper and lower surface metal and metal throuth hole (4) surrounds jointly.
3. a kind of substrate integration wave-guide chamber with multiple response according to claim 2, is characterized in that: described substrate integration wave-guide chamber (1) shape is set to square, circular or polygon.
4. a kind of substrate integration wave-guide chamber with multiple response according to claim 2, it is characterized in that: described perturbation (2) is set to single through hole or multiple through hole, described through hole is concentrated or scattering device, and described shape of through holes is set to circular or square.
5. a kind of substrate integration wave-guide chamber with multiple response according to claim 2, is characterized in that: described input/output end port (3) is set to microstrip line construction, coplanar waveguide structure or substrate integrated wave guide structure.
6. a kind of substrate integration wave-guide chamber with multiple response according to claim 2, is characterized in that: described input/output end port (3) is set to orthogonal placement or angle presentation is placed.
7. a kind of substrate integration wave-guide chamber with multiple response according to any one of claim 2-6, is characterized in that: described metal throuth hole (4) can be substituted by metallic channel.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104810595A (en) * | 2015-05-06 | 2015-07-29 | 储鹏 | Substrate integrated waveguide cavity with several responses |
| CN112563702A (en) * | 2020-11-17 | 2021-03-26 | 杭州电子科技大学 | Miniaturized dual-mode filter based on HMSIW cavity and zero point adjusting method |
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2015
- 2015-05-06 CN CN201520291905.9U patent/CN204538172U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104810595A (en) * | 2015-05-06 | 2015-07-29 | 储鹏 | Substrate integrated waveguide cavity with several responses |
| CN112563702A (en) * | 2020-11-17 | 2021-03-26 | 杭州电子科技大学 | Miniaturized dual-mode filter based on HMSIW cavity and zero point adjusting method |
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Granted publication date: 20150805 Termination date: 20170506 |