CN204481020U - Metallic packaging big current MOS half-bridge module - Google Patents
Metallic packaging big current MOS half-bridge module Download PDFInfo
- Publication number
- CN204481020U CN204481020U CN201520262708.4U CN201520262708U CN204481020U CN 204481020 U CN204481020 U CN 204481020U CN 201520262708 U CN201520262708 U CN 201520262708U CN 204481020 U CN204481020 U CN 204481020U
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- Prior art keywords
- copper
- esd protection
- big current
- ceramic substrate
- current
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000000919 ceramic Substances 0.000 claims abstract description 17
- 238000005245 sintering Methods 0.000 claims abstract description 15
- BLNMQJJBQZSYTO-UHFFFAOYSA-N copper molybdenum Chemical group [Cu][Mo][Cu] BLNMQJJBQZSYTO-UHFFFAOYSA-N 0.000 claims abstract description 13
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical group C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 5
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims abstract description 5
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical group [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000011224 oxide ceramic Substances 0.000 claims abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000003466 welding Methods 0.000 abstract description 2
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Metallic packaging big current MOS half-bridge module, comprise metal shell, ceramic substrate, metal transfer sheet and big current power MOS pipe chip, its special character is: described metal shell base plate is tungsten copper base plate, ceramic substrate is beryllium oxide ceramics substrate, metal transfer sheet is copper molybdenum copper sheet, described big current power MOS pipe chip sintering is on copper molybdenum copper sheet, on copper molybdenum copper sheet, welding forms grid current-limiting resistance and the bi-directional ESD protection diode of grid esd protection circuit, on a ceramic substrate sintering have adopt diameter be 2.9 millimeters-3.2 millimeters oxygen-free copper form High-current output outer lead, described big current power MOS pipe chip and grid esd protection circuit and High-current output outer lead adopt wire ultrasonic bonding to interconnect between Can inside point, screw is provided with in High-current output outer lead outer end.Beneficial effect is: can realize High-current output; Have esd protection function, perfect heat-dissipating, reliability is high, and burn-out resistance is strong, easy to use.
Description
Technical field
The utility model relates to a kind of power semiconductor modular, especially relates to a kind of metallic packaging big current MOS half-bridge module.
Background technology
The MOS half-bridge module of big current is generally based on plastic package structure, and salt fog resistance corrosive power is poor, and operating temperature range is generally at-40 DEG C ~+85 DEG C, and the total quality of product and reliability are all relatively low.And the current capacity of common metal package power MOS half-bridge module is generally poor, cannot compare favourably with the module product of similar plastic package structure.Simultaneously; because power MOS pipe belongs to electrostatic sensitivity device; and common plastics or metallic packaging MOS half-bridge module product are without electrostatic defending measure; therefore product very easily occurs that electrostatic breakdown was lost efficacy in assembling, transport and use procedure; in order to prevent power MOS pipe generation electrostatic breakdown, outside usual product needs in use, take electrostatic defending protective circuit.
Summary of the invention
The technical problems to be solved in the utility model is to provide the integrated ESD protection circuit in a kind of inside, possesses the metallic packaging big current MOS half-bridge module of High-current output ability.The metallic packaging big current MOS half-bridge module that the utility model relates to, comprise metal shell, the ceramic substrate of sintering on metal shell, sintering metal transfer sheet on a ceramic substrate, be located at the big current power MOS pipe chip on metal transfer sheet, its special character is: described metal shell base plate is tungsten copper base plate, ceramic substrate is beryllium oxide ceramics substrate, metal transfer sheet is copper molybdenum copper sheet, described big current power MOS pipe chip sintering is on copper molybdenum copper sheet, copper molybdenum copper sheet is welded with the grid current-limiting resistance and bi-directional ESD protection diode that form grid esd protection circuit, on a ceramic substrate sintering have adopt diameter be 2.9 millimeters-3.2 millimeters oxygen-free copper form High-current output outer lead, described big current power MOS pipe chip and grid esd protection circuit and High-current output outer lead adopt wire ultrasonic bonding to interconnect between Can inside point.
Further, be provided with screw in High-current output outer lead outer end, bolt can be adopted to crimp the external copper cash of mode, when preventing from adopting welding procedure to connect, the overheated open failure of tie point in High-current output process.
Further, described grid current-limiting resistance is Chip-R, and described bi-directional ESD protection diode is surface mount packages.
The beneficial effects of the utility model are:
1, metal transfer sheet adopts the High-current output outer lead that the oxygen-free copper that copper molybdenum copper sheet and employing are 2.9 millimeters-3.2 millimeters by diameter is formed, and ensure that the High-current output ability of product.
2, adopt grid current-limiting resistance and bi-directional ESD protection diode to constitute esd protection circuit, the three grades of requirements of electrostatic defending grade can be met.
3, metal shell adopts tungsten copper base plate, and ceramic substrate adopts beryllium oxide ceramics substrate, and the features such as thermal conductivity is high, thermal matching is good that both have, make product have more superior heat dispersion and reliability level.
4, big current power MOS pipe chip welds with the sintering of copper molybdenum copper sheet, reduces the sintering voidage of chip, improves the burn-out resistance of product; Mode by combination forms full-bridge or three phase bridge circuit, easy to use.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Fig. 2 is the vertical view of Fig. 1 (removing pipe cap).
Fig. 3 is circuit theory diagrams of the present utility model.
In figure: 1-metal shell, 2-ceramic substrate, 3-copper molybdenum copper sheet, 4-big current power MOS pipe chip, 5-wire, 6-bi-directional ESD protection diode, 7-grid current-limiting resistance, 8-High-current output lead-in wire, 9-screw.
Embodiment
As shown in the figure, the utility model comprises metal shell 1, the ceramic substrate 2 of sintering on metal shell 1 and the metal transfer sheet of sintering on ceramic substrate 2, ceramic substrate 2 there is High-current output to go between 8 by high-temperature solder sintering, described metal transfer sheet adopts copper molybdenum copper sheet 3, copper molybdenum copper sheet 3 adopting solder sinter has big current power MOS pipe chip 4 and is welded with bi-directional ESD protection diode 6 and grid current-limiting resistance 7, described grid current-limiting resistance 7 is Chip-R, bi-directional ESD protection diode 6 is surface mount packages, described grid current-limiting resistance 7 and bi-directional ESD protection diode 6 form grid esd protection circuit, wherein the base plate of metal shell 1 is tungsten copper base plate, ceramic substrate 2 is beryllium oxide ceramics substrate, big current power MOS pipe chip 4 and gate protection circuit and High-current output go between and 8 in Can 1, adopt wire 5 to interconnect through ultrasonic bonding between position, screw 9 is provided with in High-current output 8 outer ends that go between.
These are only specific embodiment of the utility model, be not limited to the utility model, for a person skilled in the art, the utility model can have various modifications and variations.All within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.
Claims (3)
1. a metallic packaging big current MOS half-bridge module, comprise metal shell, the ceramic substrate of sintering on metal shell, sintering metal transfer sheet on a ceramic substrate, be located at the big current power MOS pipe chip on metal transfer sheet, it is characterized in that: described metal shell base plate is tungsten copper base plate, ceramic substrate is beryllium oxide ceramics substrate, metal transfer sheet is copper molybdenum copper sheet, described big current power MOS pipe chip sintering is on copper molybdenum copper sheet, copper molybdenum copper sheet is welded with the grid current-limiting resistance and bi-directional ESD protection diode that form grid esd protection circuit, on a ceramic substrate sintering have adopt diameter be 2.9 millimeters-3.2 millimeters oxygen-free copper form High-current output outer lead, described big current power MOS pipe chip and grid esd protection circuit and High-current output outer lead adopt wire ultrasonic bonding to interconnect between Can inside point.
2. metallic packaging big current MOS half-bridge module according to claim 1, is characterized in that: be provided with screw in High-current output outer lead outer end.
3. metallic packaging big current MOS half-bridge module according to claim 1, is characterized in that: described grid current-limiting resistance is Chip-R, and described bi-directional ESD protection diode is surface mount packages.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520262708.4U CN204481020U (en) | 2015-04-25 | 2015-04-25 | Metallic packaging big current MOS half-bridge module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520262708.4U CN204481020U (en) | 2015-04-25 | 2015-04-25 | Metallic packaging big current MOS half-bridge module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204481020U true CN204481020U (en) | 2015-07-15 |
Family
ID=53636796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520262708.4U Active CN204481020U (en) | 2015-04-25 | 2015-04-25 | Metallic packaging big current MOS half-bridge module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204481020U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461995A (en) * | 2018-03-22 | 2018-08-28 | 无锡工赢智能科技有限公司 | High current power MOS packaging systems |
-
2015
- 2015-04-25 CN CN201520262708.4U patent/CN204481020U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461995A (en) * | 2018-03-22 | 2018-08-28 | 无锡工赢智能科技有限公司 | High current power MOS packaging systems |
| CN108461995B (en) * | 2018-03-22 | 2023-09-26 | 无锡工赢智能科技有限公司 | High-current power MOS packaging device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 121000 No. 58, Songshan street, Taihe District, Jinzhou City, Liaoning Province Patentee after: Jinzhou Liaojing Electronic Technology Co.,Ltd. Address before: 121000 No. five, section 10, Renmin Street, Guta District, Liaoning, Jinzhou Patentee before: JINZHOU LIAOJING ELECTRONIC TECHNOLOGY CO.,LTD. |