CN204111923U - Polysilicon efficient silicon ingot seeding plate - Google Patents
Polysilicon efficient silicon ingot seeding plate Download PDFInfo
- Publication number
- CN204111923U CN204111923U CN201420515808.9U CN201420515808U CN204111923U CN 204111923 U CN204111923 U CN 204111923U CN 201420515808 U CN201420515808 U CN 201420515808U CN 204111923 U CN204111923 U CN 204111923U
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- CN
- China
- Prior art keywords
- silicon
- seeding plate
- plate core
- particle
- seeding
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000010899 nucleation Methods 0.000 title claims abstract description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 40
- 239000010703 silicon Substances 0.000 title claims abstract description 40
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 21
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 19
- 239000002245 particle Substances 0.000 claims abstract description 54
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000011247 coating layer Substances 0.000 claims abstract description 18
- 239000000725 suspension Substances 0.000 abstract description 14
- 239000003795 chemical substances by application Substances 0.000 abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 9
- 239000013078 crystal Substances 0.000 abstract description 8
- 230000006911 nucleation Effects 0.000 abstract description 8
- 230000002269 spontaneous effect Effects 0.000 abstract description 6
- 238000003756 stirring Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000001816 cooling Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- 229910052786 argon Inorganic materials 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 4
- 238000005266 casting Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a kind of polysilicon efficient silicon ingot seeding plate, solve existing silicon crystal spontaneous nucleation seeding plate and easily cause heterogeneous nucleation and the low problem of nucleus quality.Comprise the seeding plate core (1) that silicon purity is greater than 99.99999%; seeding plate core (1) to be the length of side be 125 millimeters or the length of side is the square of 156 millimeters; the outside surface of seeding plate core (1) is bonded with the bonding coating layer (2) of silicon carbide particle or silicon nitride particle, and the silicon carbide particle in bonding coating layer (2) or the particle diameter of silicon nitride particle are less than or equal to 0.003 millimeter.The silicon carbide particle chosen is put in agitator together with pure water and tackiness agent and stirs 15-20 minute, make the silicon carbide particle paste suspension body that density is greater than 2.33 grams/cubic centimeter, seeding plate core (1) is put into suspension liquid to carry out coated, then dries and burns cooling.Be specially adapted to produce in crucible in the production process of the efficient silicon ingot of polysilicon.
Description
Technical field
The present invention relates to the seeding plate of the efficient silicon ingot of a kind of polysilicon, particularly the seeding plate and preparation method thereof of the efficient silicon ingot of a kind of polysilicon used in high efficient crucible, is applicable to photovoltaic industry casting ingot process link.
Background technology
Polycrystalline silicon casting ingot process link is in the front end of photovoltaic industry industrial chain, plays conclusive effect to production links such as follow-up silicon chip, cell pieces.Polycrystalline silicon ingot casting is generally the method adopting directional freeze, the silicon material that will be loaded in quartz crucible by electrically heated fusing, recycles certain processing method forming core, long crystalline substance from crucible bottom, finally forms the polycrystal silicon ingot met the demands.At present, the forming core method of efficient silicon ingot mainly contains two kinds, first method utilizes the unfused silicon material being laid on crucible bottom to carry out forming core, namely forming core is carried out with silicon crystal spontaneous nucleation seeding particle, the determination of non-melted silicon material height of laying in crucible bottom depends on manual operation, there is the shortcoming of consistence difference, silicon ingot must expect that rate is low, and cost is high; Second method utilizes the polymorphic structure of crucible bottom to carry out forming core, and crucible bottom polymorphic structure easily causes the sticky crucible in bottom, and there is the problem of returns subsequent disposal difficulty.
Summary of the invention
The invention provides a kind of polysilicon efficient silicon ingot seeding plate, solve existing silicon crystal spontaneous nucleation seeding particle and easily cause heterogeneous nucleation and the low technical problem of nucleus quality.
The present invention solves above technical problem by the following technical programs:
A kind of polysilicon efficient silicon ingot seeding plate; comprise the seeding plate core that silicon purity is greater than 99.99999%; seeding plate core to be the length of side the be square plate core of 125 millimeters or the length of side are the square plate core of 156 millimeters; the outside surface of seeding plate core is bonded with the bonding coating layer of silicon carbide particle or silicon nitride particle, and the silicon carbide particle in bonding coating layer or the particle diameter of silicon nitride particle are less than or equal to 0.003 millimeter.
The volume of seeding plate core is 1:2-1:5 with the ratio of the volume of bonding coating layer.
A preparation method for polysilicon efficient silicon ingot seeding plate, comprises the following steps:
The first step, to choose the length of side that silicon purity is greater than 99.99999% be 125 millimeters or the length of side be 156 millimeters seeding plate core;
Second step, choose the silicon carbide particle that particle diameter is less than or equal to 0.003 millimeter;
3rd step, choose resistivity and be greater than the pure water of 18M Ω .cm and the metal content tackiness agent lower than 30ppma;
Put in agitator together with the pure water that 4th step, silicon carbide particle and the 3rd step chosen by second step are chosen and tackiness agent and stir 15-20 minute, make the silicon carbide particle paste suspension body that density is greater than 2.33 grams/cubic centimeter;
5th step, the seeding plate core the first step chosen are put in the silicon carbide particle paste suspension body that the 4th step obtains and are soaked 2-5 minute;
6th step, by soaked for the 5th step and the seeding plate core being coated with silicon carbide particle paste suspension layer is placed in argon gas atmosphere, dry burning and make its temperature reach 150-200 DEG C, and keep 10-30 minute; Then make it in argon gas atmosphere, naturally cool to room temperature;
7th step, the volume choosing seeding plate core are the finished product of 1:2-1:5 with the ratio of the volume of bonding coating layer, obtain polysilicon efficient silicon ingot seeding plate.
A preparation method for polysilicon efficient silicon ingot seeding plate, comprises the following steps:
The first step, to choose the length of side that silicon purity is greater than 99.99999% be 125 millimeters or the length of side be 156 millimeters seeding plate core;
Second step, choose the silicon nitride particle that particle diameter is less than or equal to 0.003 millimeter;
3rd step, choose resistivity and be greater than the pure water of 18M Ω .cm and the metal content tackiness agent lower than 30ppma;
Put in agitator together with the pure water that 4th step, silicon nitride particle and the 3rd step chosen by second step are chosen and tackiness agent and stir 15-20 minute, make the silicon nitride particle paste suspension body that density is greater than 2.33 grams/cubic centimeter;
5th step, the seeding plate core the first step chosen are put in the silicon nitride particle paste suspension body that the 4th step obtains and are soaked 2-5 minute;
6th step, by soaked for the 5th step and the seeding plate core being coated with silicon nitride particle paste suspension layer is placed in argon gas atmosphere, dry burning and make its temperature reach 150-200 DEG C, and keep 10-30 minute; Then make it in argon gas atmosphere, naturally cool to room temperature;
7th step, the volume choosing seeding plate core are the finished product of 1:2-1:5 with the ratio of the volume of bonding coating layer, obtain polysilicon efficient silicon ingot seeding plate.
Seeding plate of the present invention provides controlled nucleating center for silicon crystal non-spontaneous forming core, and guides the heterogeneous nucleation of silicon crystal, reaches the effect producing good uniformity and the high high-quality nucleus of consistence, for the production of follow-up high-quality cell piece lays the foundation.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in detail:
A kind of polysilicon efficient silicon ingot seeding particle; comprise the seeding plate core 1 that silicon purity is greater than 99.99999%; seeding plate core 1 to be the length of side the be square plate core of 125 millimeters or the length of side are the square plate core of 156 millimeters; the outside surface of seeding plate core 1 is bonded with the bonding coating layer 2 of silicon carbide particle or silicon nitride particle, and the silicon carbide particle in bonding coating layer 2 or the particle diameter of silicon nitride particle are less than or equal to 0.003 millimeter.
The volume of seeding plate core 1 is 1:2-1:5 with the ratio of the volume of bonding coating layer 2.Also laminated coating layer can be set.
A preparation method for polysilicon efficient silicon ingot seeding plate, comprises the following steps:
The first step, to choose the length of side that silicon purity is greater than 99.99999% be 125 millimeters or the length of side be 156 millimeters seeding plate core 1;
Second step, choose the silicon carbide particle that particle diameter is less than or equal to 0.003 millimeter;
3rd step, choose resistivity and be greater than the pure water of 18M Ω .cm and the metal content tackiness agent lower than 30ppma;
Put in agitator together with the pure water that 4th step, silicon carbide particle and the 3rd step chosen by second step are chosen and tackiness agent and stir 15-20 minute, make the silicon carbide particle paste suspension body that density is greater than 2.33 grams/cubic centimeter;
5th step, the seeding plate core 1 the first step chosen are put in the silicon carbide particle paste suspension body that the 4th step obtains and are soaked 2-5 minute;
6th step, by soaked for the 5th step and the seeding plate core 1 being coated with silicon carbide particle paste suspension layer is placed in argon gas atmosphere, dry burning and make its temperature reach 150-200 DEG C, and keep 10-30 minute; Then make it in argon gas atmosphere, naturally cool to room temperature;
7th step, the volume choosing seeding plate core 1 are the finished product of 1:2-1:5 with the ratio of the volume of bonding coating layer 2, obtain polysilicon efficient silicon ingot seeding plate.
A preparation method for polysilicon efficient silicon ingot seeding plate, comprises the following steps:
The first step, to choose the length of side that silicon purity is greater than 99.99999% be 125 millimeters or the length of side be 156 millimeters seeding plate core 1;
Second step, choose the silicon nitride particle that particle diameter is less than or equal to 0.003 millimeter;
3rd step, choose resistivity and be greater than the pure water of 18M Ω .cm and the metal content tackiness agent lower than 30ppma;
Put in agitator together with the pure water that 4th step, silicon nitride particle and the 3rd step chosen by second step are chosen and tackiness agent and stir 15-20 minute, make the silicon nitride particle paste suspension body that density is greater than 2.33 grams/cubic centimeter;
5th step, the seeding plate core 1 the first step chosen are put in the silicon nitride particle paste suspension body that the 4th step obtains and are soaked 2-5 minute;
6th step, by soaked for the 5th step and the seeding particle cores 1 being coated with silicon nitride particle paste suspension layer is placed in argon gas atmosphere, dry burning and make its temperature reach 150-200 DEG C, and keep 10-30 minute; Then make it in argon gas atmosphere, naturally cool to room temperature;
7th step, the volume choosing seeding plate core 1 are the finished product of 1:2-1:5 with the ratio of the volume of bonding coating layer 2, obtain polysilicon efficient silicon ingot seeding plate.
Silicon carbide particle in bonding coating layer 2 involved in the present invention or the particle diameter of silicon nitride particle are less than or equal to 0.003 millimeter; also the identical with crystalline silicon lattice parameter or close of other can be selected; and fusing point is higher than 1430 degrees Celsius, the particle that density is greater than 2.33 grams/cc.The most handy tackiness agent identical or close with crystalline silicon lattice parameter of tackiness agent involved in the present invention, the metal content of this tackiness agent will lower than 30ppma.Bonding coating layer involved in the present invention is not limited to 2 layers.
Seeding plate of the present invention has the physical property close with silicon materials; This seeding plate can effectively reduce the nucleating work needed for forming core, greatly enhances the ability of heterogeneous nucleation; This seeding plate provides controlled nucleating center for silicon crystal non-spontaneous forming core.The invention solves at present, current fine melt efficient silicon ingot early growth period seeding material embeds silicon crystal, causes the later stage to split the problem of ingot; Solve the long brilliant initial stage seed crystal fusing degree of the efficient silicon ingot of current fritting wayward, and the later stage must expect the problem that rate is low; Present invention reduces forming core condition, facilitate the mode of non-spontaneous forming core, solve in nucleation process due to the uncontrollable problem of forming core that the factor such as thermal field, crucible causes.
Claims (2)
1. a polysilicon efficient silicon ingot seeding plate; comprise the seeding plate core (1) that silicon purity is greater than 99.99999%; it is characterized in that; seeding plate core (1) to be the length of side the be square plate core of 125 millimeters or the length of side are the square plate core of 156 millimeters; the outside surface of seeding plate core (1) is bonded with the bonding coating layer (2) of silicon carbide particle or silicon nitride particle, and the silicon carbide particle in bonding coating layer (2) or the particle diameter of silicon nitride particle are less than or equal to 0.003 millimeter.
2. a kind of polysilicon according to claim 1 efficient silicon ingot seeding plate, is characterized in that, the volume of seeding plate core (1) is 1:2-1:5 with the ratio of the volume of bonding coating layer (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420515808.9U CN204111923U (en) | 2014-09-10 | 2014-09-10 | Polysilicon efficient silicon ingot seeding plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420515808.9U CN204111923U (en) | 2014-09-10 | 2014-09-10 | Polysilicon efficient silicon ingot seeding plate |
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| Publication Number | Publication Date |
|---|---|
| CN204111923U true CN204111923U (en) | 2015-01-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420515808.9U Expired - Lifetime CN204111923U (en) | 2014-09-10 | 2014-09-10 | Polysilicon efficient silicon ingot seeding plate |
Country Status (1)
| Country | Link |
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| CN (1) | CN204111923U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104152989A (en) * | 2014-09-10 | 2014-11-19 | 山西中电科新能源技术有限公司 | Polycrystalline-silicon high-efficiency silicon ingot seeding plate and preparation method thereof |
-
2014
- 2014-09-10 CN CN201420515808.9U patent/CN204111923U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104152989A (en) * | 2014-09-10 | 2014-11-19 | 山西中电科新能源技术有限公司 | Polycrystalline-silicon high-efficiency silicon ingot seeding plate and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20150121 |