CN204083976U - Direct-light type LED backlight module - Google Patents
Direct-light type LED backlight module Download PDFInfo
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- CN204083976U CN204083976U CN201420297499.2U CN201420297499U CN204083976U CN 204083976 U CN204083976 U CN 204083976U CN 201420297499 U CN201420297499 U CN 201420297499U CN 204083976 U CN204083976 U CN 204083976U
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Abstract
Direct-light type LED backlight module, comprises the backboard being provided with encapsulation cavity, and arrange backlight in encapsulation cavity, described encapsulation cavity top is provided with diffuser plate, and the plane that described diffuser plate is relative with described backlight is incidence surface; Described backlight is the LED flip chip that multiple interval is arranged in bottom cavity, described LED flip chip is packaged on substrate, distance H between the light-emitting area of described LED flip chip and the incidence surface of described diffuser plate and between the distance L between adjacent LED flip-chip light emitting central point meet: L≤2H*tan α, wherein, α is that chip light energy launches axial angle, and tan represents arctangent operation.The utility model LED flip chip is as backlight, just effectively even light mixing can be realized by adjustment LED flip chip spacing and the distance between flip-chip light emitting surface and diffuser plate, without the need to using optics of astigmatism device, achieving the ultrathin of backlight module, reducing manufacturing cost.
Description
Technical field
The utility model belongs to technical field of liquid crystal display equipment, particularly relates to a kind of down straight aphototropism mode set adopting LED flip chip.
Background technology
Liquid crystal indicator (LCD, Liquid Crystal Display) has that fuselage is thin, power saving, the many merits such as radiationless, be widely used.Liquid crystal indicator major part on existing market is backlight liquid crystal indicator, and it comprises liquid crystal panel and backlight module.Because LCDs itself is not luminous, therefore, backlight module (backlight module) is one of key component of LCD, the light source that the function of backlight module is to provide enough brightness and is evenly distributed, and makes display can normal show image.The operation principle of liquid crystal panel places liquid crystal molecule in the middle of the glass substrate that two panels is parallel, there is the tiny electric wire of many vertical and levels in the middle of two panels glass substrate, change direction by whether being energized to control liquid crystal molecule, the light refraction of backlight module is out produced picture.
Existing LED backlight is cold-cathode tube CCFL and LED mainly, and backlight module is divided into side entrance back module and down straight aphototropism mode set two kinds according to the difference of light source incidence position.Down straight aphototropism mode set is arranged in below liquid crystal panel by backlight such as CCFL cathode fluorescent lamp or LED, and direct forming surface light source is supplied to liquid crystal panel.Compared with CCFL backlight, the advantage of LED backlight is that color reducibility is good, low energy consumption, extra long life, fast response time, material is without environmental hazard and better electricity optics control performance etc., especially, after employing red-green-blue LED, its color reducibility is far above CCFL backlight.In the long run, RGB three primary color LED backlight is the most promising in LCD backlight technology.
But the light energy distribution due to the direct bright dipping of LED is lambert's type, light energy concentrates in axial low-angle, directly the LED of this luminous intensity distribution is placed on the Uniform Illumination that lower panels is difficult to realize on panel.The direct-light type LED backlight module of conventional liquid crystal, in order to realize the Uniform Illumination on panel, is generally taked the mode of the distance increased between astigmatism plate and LED light source, but is too increased the thickness of module while increasing this distance, be unfavorable for the development of ultrathin.
The more settling mode of another kind of use increases optics of astigmatism device, and such as between LED light source and astigmatism plate, surface increases a secondary optical lens, and the light sent in order to scattering LED light source realizes the object of mixed light to reach.But secondary optical lens itself will occupy certain thickness, also restriction will to a certain degree be defined to the ultrathin of backlight module.In addition, between existing secondary optical lens and LED, there is certain matching problem, if namely mate bad between the two, will directly affect the effect quality of even light mixing.
Utility model content
The purpose of this utility model is to provide a kind of down straight aphototropism mode set adopting flip chip technology (fct) (Flip-chip), while effectively realizing even light mixing, simplifies structure, reduces manufacturing cost.
To achieve these goals, the utility model takes following technical solution:
Direct-light type LED backlight module, comprises the backboard being provided with encapsulation cavity, and arrange backlight in encapsulation cavity, described encapsulation cavity top is provided with diffuser plate, and the plane that described diffuser plate is relative with described backlight is incidence surface; Described backlight is the LED flip chip that multiple interval is arranged in bottom cavity, described LED flip chip is packaged on substrate, distance H between the light-emitting area of described LED flip chip and the incidence surface of described diffuser plate and between the distance L between adjacent LED flip-chip light emitting central point meet: L≤2H*tan α, wherein, α is that chip light energy launches axial angle, and tan represents arctangent operation.
Further, the distance H between the light-emitting area of described LED flip chip and the incidence surface of described diffuser plate is less than 1mm.
Further, it is 20 degree that described chip light energy launches axial angle α, and the distance H between the light-emitting area of LED flip chip and the incidence surface of diffuser plate is 0.75mm, and the distance between adjacent LED flip-chip light emitting central point is less than 0.540mm.
Further, the distance L between described adjacent LED flip-chip light emitting central point is 125 ~ 500 μm, and LED flip chip light-emitting area is 0.01 ~ 0.15 square millimeter.
Further, the madial wall of described encapsulation cavity is provided with the side reflector layer that one deck is made up of highly reflective material.
Further, described surface surface is provided with the end luminescent layer be made up of highly reflective material.
Further, described substrate is the diapire of described encapsulation cavity.
Further, described backboard is nontransparent silicon backboard or ceramic backboard or nontransparent organic plastics backboard.
Further, described backboard is aluminium backboard or copper backboard.
Further, described encapsulation cavity bottom surface is formed with alumina insulation heat-conducting layer, the PCB circuit of LED flip chip is arranged on alumina insulation heat-conducting layer, and LED flip chip to be mounted on above alumina insulation heat-conducting layer and and to be electrically connected between PCB circuit.
From above technical scheme, the utility model adopts flip LED chips technology, packaged LED flip chip array in backboard encapsulation cavity, by rationally arranging the spacing of adjacent LED flip-chip and the distance between flip-chip light emitting face and diffuser plate, make LED flip chip be projected to diffuser plate incidence surface hot spot to overlap, effectively realize even light mixing not adopting in optics of astigmatism device situation, also can reduce manufacturing cost at the ultrathin realizing backlight module simultaneously.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment, simple introduction is done below by the accompanying drawing used required in embodiment or description of the prior art, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of the utility model embodiment 1;
Fig. 2 is the schematic diagram of the LED flip chip of embodiment 1;
Fig. 3 is the structural representation of the utility model embodiment 2;
Fig. 4 is the structural representation of the utility model embodiment 3;
Fig. 5 is the structural representation of the utility model embodiment 4.
Detailed description of the invention
Embodiment 1
As shown in Figure 1, direct-light type LED backlight module of the present utility model comprises backboard 1, backboard 1 is provided with encapsulation cavity 1a, and the LED flip chip 2 as backlight is arranged in encapsulation cavity 1a.Backboard 1 top is provided with diffuser plate 3, and diffuser plate 3 is positioned at the top of LED flip chip 2, and the plane that diffuser plate 3 is relative with LED flip chip 2 is incidence surface 3a.
Simultaneously with reference to Fig. 2, LED flip chip 2 of the present utility model comprises substrate 20, is formed at n type semiconductor layer 21, multiple quantum well layer 22, p type semiconductor layer 23, current-diffusion layer 24 on substrate 20 successively, and forms with p type semiconductor layer 23 P electrode 25 that is electrically connected and form with n type semiconductor layer 21 N electrode 26 be electrically connected.The substrate 20 of the present embodiment is sapphire, also can, according to process requirements, select other to be applicable to the substrate of LED flip chip manufacture, such as SiC, ZnS, ZnO or GaAs substrate.LED flip chip 2 is packaged on substrate 4, and substrate 4 is arranged on the bottom surface of encapsulation cavity 1a of backboard 1, substrate 4 is printed with the PCB circuit be electrically connected with LED flip chip.Substrate 4 is formed with P electrode layer 40, P electrode layer 40 is formed with N electrode layer 41, be formed with insulating barrier 42 between P electrode layer 40 and N electrode layer 41, P electrode layer 40 and N electrode layer 41 are kept apart by insulating barrier 42.P electrode layer 40 is exposed in the position of corresponding flip-chip P electrode 25, P electrode layer 40 is formed the P electrode pad 43 of corresponding P electrode 25, N electrode layer 41 is formed the N electrode pad 44 of corresponding N electrode 26, P electrode 25 is connected by soldered ball with P electrode pad 43, N electrode 26 is connected by soldered ball with N electrode pad 44, thus forms electrical connection.The material of substrate 4 can be silicon chip, pottery, wiring board or metallic plate.
With reference to Fig. 1, multiple LED flip chip 2 interval is arranged in the encapsulation cavity 1a of backboard 1, distance between the light-emitting area (i.e. substrate 20) of LED flip chip 2 and the incidence surface 3a of diffuser plate 3 is H, distance between adjacent LED flip-chip 2 centre of luminescence point is L, for guaranteeing that LED flip chip is projected to diffuser plate incidence surface hot spot and overlaps, realize uniform mixed light, distance H between the light-emitting area of LED flip chip 2 of the present utility model and the incidence surface of diffuser plate 3 and meeting the following conditions between the distance L between adjacent LED flip-chip 2 centre of luminescence point: L≤2H*tan α, wherein α is that chip light energy launches axial angle, tan represents arctangent operation.For needing the backlight module realizing ultrathin, H is less than 1mm.
The light energy of launching due to LED chip is mainly distributed within the certain angle centered by light source optical axis, preferably, it is 20 degree that the present embodiment chip light energy launches axial angle α, distance H between the light-emitting area of LED flip chip 2 and the incidence surface of diffuser plate 3 is 0.75mm, then the distance between adjacent LED flip-chip 2 centre of luminescence point is less than 0.540mm.Further, the distance between adjacent LED flip-chip 2 centre of luminescence point can be set to 125 ~ 500 μm, and LED flip chip light-emitting area is 0.01 ~ 0.15 square millimeter.LED flip chip is fixed on substrate by face-down bonding and forms LED flip chip array, the spacing adopting ultrasonic etc. to be welded and fixed mode to control between LED flip chip.
Embodiment 2
As shown in Figure 3, the place that the present embodiment is different from embodiment 1 is: the madial wall of the encapsulation cavity 1a of backboard 1 is provided with the side reflector layer 1-1 that one deck is made up of highly reflective material.Simultaneously, the end luminescent layer 1-2 be made up of highly reflective material equally is preferably set at substrate 4 overhead surface, side reflector layer 1-1 and end reflector layer 1-2 makes encapsulation cavity 1a form one to reflect chamber, the light directly not arriving cavity top diffuser plate 3 that small part is sent by backlight arrives the incidence surface of diffuser plate by the reflection of side reflector layer 1-1 and end reflector layer 1-2, the luminous efficiency of further raising backlight module.The optical films such as the diffuser plate 3 arranged at encapsulation cavity top and blast rete 5, can be converted into required Luminance Distribution by uniform illuminance.
Embodiment 3
As shown in Figure 4, as different from Example 1, the PCB circuit of the present embodiment is by the silk-screen of prior art, the modes such as etching are directly arranged on the encapsulation cavity 1a bottom surface (wall) of backboard 1, LED flip chip is electrically connected with the PCB circuit on encapsulation cavity 1a bottom surface, can substrate be omitted thus, be about to the diapire of encapsulation cavity as substrate.Substrate due to PCB circuit needs to occupy certain space and possesses certain thickness, PCB circuit is directly printed on encapsulation cavity bottom surface by the present embodiment, omit substrate, contribute to the further ultrathin of backlight module, reduce costs simultaneously, and reduce and can LED flip chip conduct heat to the heat dissipation path of backboard, make the optimization of backlight module radiating effect.The backboard 1 of the present embodiment is made up of the insulative inorganic material such as nontransparent silicon or pottery or nontransparent organic plastics.
Embodiment 4
As shown in Figure 5, as different from Example 4, backboard 1 is by aluminium, and the conductive metallic materials such as copper are made, and such as, the backboard base material of the present embodiment is metal aluminum based material, and cavity 1a bottom surface is formed with alumina insulation heat-conducting layer 6 in encapsulation.Controlling the PCB circuit of LED flip chip is arranged on alumina insulation heat-conducting layer 6, and LED flip chip to be mounted on above this alumina insulation heat-conducting layer and and to be electrically connected between PCB circuit.
Become evenly to make light after diffuser plate, unanimously, the exiting surface of diffuser plate can arrange scattering micro-structural, carries out scattering to the light that LED flip chip sends, and this scattering microstructure aspects is zigzag or wavy shaped configuration.Diffuser plate can be mixed with scattering particles by one or more in polymethyl methacrylate, Merlon, polystyrene and form, and aforementioned scatter particle is silica (SiO2) or titanium dioxide (TiO2) particle.
Because traditional backlight module is made up of packaged LED lamp bead, LED lamp bead generally includes several LEDs chip, lead frame, heat dispersion substrate and transparent sealing, size is large, limit the spacing adjustment of backlight luminous point, the utility model utilizes the flip LED chips of flip chip technology arrangement interval arrangement in the encapsulation cavity of backboard, formation high density arrays distributes, by spacing between adjustment LED flip chip and and distance between LED flip chip light-emitting area and diffuser plate, make LED flip chip be projected to diffuser plate incidence surface hot spot to overlap, even light mixing is realized not adopting in optics of astigmatism device situation on diffuser plate incidence surface, realize the ultrathin of backlight module simultaneously.
LED flip chip can only include monochromatic LED flip-chip, also can be the dual-colored LED flip-chip comprised based on ruddiness and green glow chip, or based on adding LED flip chip that is amber or purple outside the three-color LED flip-chip of ruddiness, green glow and blue chip.Wherein red light chips can be made up of GaAs, GaInP or the InGaN material with high In ingredient.Blue green light chip is then made up by chip technology of III-V material.The substrate of blue led flip-chip applies respective color fluorescent material by modes such as wafer-level packaging technique or electrophoresis processes and forms transmitting blue light, ruddiness, green glow.
In this description, various piece adopts the mode of going forward one by one to describe, and what each some importance illustrated is the difference with other parts, between various piece same or similar part mutually see.It is form disclosed in embodiment that syntagmatic between each parts has more than, and to the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field is realized or uses the utility model.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein when not departing from spirit or scope of the present utility model, can realize in other embodiments.Therefore, the utility model can not be restricted to embodiment illustrated herein, but will meet the most wide region consistent with principle disclosed herein and features of novelty.
Claims (10)
1. direct-light type LED backlight module, comprises the backboard being provided with encapsulation cavity, and arrange backlight in encapsulation cavity, described encapsulation cavity top is provided with diffuser plate, and the plane that described diffuser plate is relative with described backlight is incidence surface;
It is characterized in that:
Described backlight is the LED flip chip that multiple interval is arranged in bottom cavity, described LED flip chip is packaged on substrate, distance H between the light-emitting area of described LED flip chip and the incidence surface of described diffuser plate and between the distance L between adjacent LED flip-chip light emitting central point meet: L≤2H*tan α, wherein, α is that chip light energy launches axial angle, and tan represents arctangent operation.
2. direct-light type LED backlight module as claimed in claim 1, is characterized in that: the distance H between the light-emitting area of described LED flip chip and the incidence surface of described diffuser plate is less than 1mm.
3. direct-light type LED backlight module as claimed in claim 1 or 2, it is characterized in that: it is 20 degree that described chip light energy launches axial angle α, distance H between the light-emitting area of LED flip chip and the incidence surface of diffuser plate is 0.75mm, and the distance between adjacent LED flip-chip light emitting central point is less than 0.540mm.
4. direct-light type LED backlight module as claimed in claim 1 or 2, is characterized in that: the distance L between described adjacent LED flip-chip light emitting central point is 125 ~ 500 μm, and LED flip chip light-emitting area is 0.01 ~ 0.15 square millimeter.
5. direct-light type LED backlight module as claimed in claim 1, is characterized in that: the madial wall of described encapsulation cavity is provided with the side reflector layer that one deck is made up of highly reflective material.
6. direct-light type LED backlight module as claimed in claim 1, is characterized in that: described surface surface is provided with the end luminescent layer be made up of highly reflective material.
7. direct-light type LED backlight module as claimed in claim 1, is characterized in that: described substrate is the diapire of described encapsulation cavity.
8. direct-light type LED backlight module screen as claimed in claim 7, is characterized in that: described backboard is nontransparent silicon backboard or ceramic backboard or nontransparent organic plastics backboard.
9. direct-light type LED backlight module screen as claimed in claim 7, is characterized in that: described backboard is aluminium backboard or copper backboard.
10. the direct-light type LED backlight module screen as described in claim 7 or 8 or 9, it is characterized in that: described encapsulation cavity bottom surface is formed with alumina insulation heat-conducting layer, the PCB circuit of LED flip chip is arranged on alumina insulation heat-conducting layer, and LED flip chip to be mounted on above alumina insulation heat-conducting layer and and to be electrically connected between PCB circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420297499.2U CN204083976U (en) | 2014-06-05 | 2014-06-05 | Direct-light type LED backlight module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420297499.2U CN204083976U (en) | 2014-06-05 | 2014-06-05 | Direct-light type LED backlight module |
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| Publication Number | Publication Date |
|---|---|
| CN204083976U true CN204083976U (en) | 2015-01-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420297499.2U Expired - Fee Related CN204083976U (en) | 2014-06-05 | 2014-06-05 | Direct-light type LED backlight module |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107894679A (en) * | 2017-12-29 | 2018-04-10 | 西安智盛锐芯半导体科技有限公司 | Backlight module and liquid crystal display device |
| CN108051951A (en) * | 2017-12-29 | 2018-05-18 | 西安智盛锐芯半导体科技有限公司 | LED light source, backlight module and liquid crystal display device |
| CN111752045A (en) * | 2020-07-15 | 2020-10-09 | 武汉华星光电技术有限公司 | Backlight module and display device |
| CN111781772A (en) * | 2020-07-16 | 2020-10-16 | 东莞市中麒光电技术有限公司 | LED backlight source, LED backlight module and preparation method |
| CN115576134A (en) * | 2022-09-14 | 2023-01-06 | 惠科股份有限公司 | Display module and display device |
-
2014
- 2014-06-05 CN CN201420297499.2U patent/CN204083976U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107894679A (en) * | 2017-12-29 | 2018-04-10 | 西安智盛锐芯半导体科技有限公司 | Backlight module and liquid crystal display device |
| CN108051951A (en) * | 2017-12-29 | 2018-05-18 | 西安智盛锐芯半导体科技有限公司 | LED light source, backlight module and liquid crystal display device |
| CN107894679B (en) * | 2017-12-29 | 2023-01-10 | 苏州九骏电子科技有限公司 | Backlight module and liquid crystal display device |
| CN111752045A (en) * | 2020-07-15 | 2020-10-09 | 武汉华星光电技术有限公司 | Backlight module and display device |
| CN111781772A (en) * | 2020-07-16 | 2020-10-16 | 东莞市中麒光电技术有限公司 | LED backlight source, LED backlight module and preparation method |
| CN115576134A (en) * | 2022-09-14 | 2023-01-06 | 惠科股份有限公司 | Display module and display device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191127 Address after: 519000 Guangdong city of Zhuhai province high tech Zone Tangjiawan town Jinfeng Road No. 1 office building on the third floor Room 301 Patentee after: ELEC-TECH INTERNATIONAL CO.,LTD. Address before: 519085 Guangdong city of Zhuhai Province town Jinfeng Road No. 1 Patentee before: ELEC-TECH INTERNATIONAL Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 519000 Guangdong city of Zhuhai province high tech Zone Tangjiawan town Jinfeng Road No. 1 office building on the third floor Room 301 Patentee after: Zhuhai Leishi Lighting Co.,Ltd. Address before: 519000 Guangdong city of Zhuhai province high tech Zone Tangjiawan town Jinfeng Road No. 1 office building on the third floor Room 301 Patentee before: ELEC-TECH INTERNATIONAL Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150107 |
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| CF01 | Termination of patent right due to non-payment of annual fee |