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CN1920505B - Temperature sensor, thin film transistor array panel, liquid crystal display - Google Patents

Temperature sensor, thin film transistor array panel, liquid crystal display Download PDF

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Publication number
CN1920505B
CN1920505B CN2006100993306A CN200610099330A CN1920505B CN 1920505 B CN1920505 B CN 1920505B CN 2006100993306 A CN2006100993306 A CN 2006100993306A CN 200610099330 A CN200610099330 A CN 200610099330A CN 1920505 B CN1920505 B CN 1920505B
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CN
China
Prior art keywords
signal
temperature
line
voltage
lcd
Prior art date
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Expired - Fee Related
Application number
CN2006100993306A
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Chinese (zh)
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CN1920505A (en
Inventor
李起赞
朴允载
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Samsung Display Co Ltd
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Samsung Electronics Co Ltd
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Priority claimed from KR1020060002586A external-priority patent/KR20070074710A/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1920505A publication Critical patent/CN1920505A/en
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Publication of CN1920505B publication Critical patent/CN1920505B/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133382—Heating or cooling of liquid crystal cells other than for activation, e.g. circuits or arrangements for temperature control, stabilisation or uniform distribution over the cell
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/041—Temperature compensation
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Liquid Crystal Display Device Control (AREA)

Abstract

A temperature sensor for a display device is provided, which includes a substrate for the display devices, and a temperature sensing line formed on the substrate. The temperature sensing line is a conductor.

Description

Temperature sensor, thin-film transistor display panel, LCD
Related application
The present invention requires the right of priority in korean patent application 2005-0064147 number that Korea S Department of Intellectual Property submits to and the korean patent application submitted on January 10th, 2006 2006-0002586 number on July 15th, 2005, and its full content is hereby expressly incorporated by reference.
Technical field
The present invention relates to a kind of temperature sensor of display device, the thin-film transistor display panel that comprises temperature sensor and LCD of being used for.
Background technology
The display device that is used for the display of computing machine and televisor comprises self-emission display apparatus and luminous display unit not.Self-emission display apparatus comprises organic light emitting display (OLED), vacuum fluorescent display (VFD), field-emitter display (FED) and plasma panel display (PDP), and luminous display unit does not comprise LCD (LCD).Different with self-emitting display, active display does not need light source to come display image.
LCD comprises that being provided with the field sends a telegraph two panels of the utmost point, and liquid crystal (LC) layer that has intervenient each diversity of dielectric is sent a telegraph in the field.Send a telegraph the utmost point to the field voltage is provided, to produce electric field at LC layer two ends.Optical transmission rate by liquid crystal layer changes according to the intensity of the electric field that is generated, and this electric field can be by the Control of Voltage that applies.Therefore, the voltage that applies by adjusting shows desired images.
The light source that is used for LCD can be the lamp that is connected to LCD, perhaps can be environment light source, for example, and the sun.
Because the optical characteristics of the liquid crystal of LC layer changes according to temperature, so the reliability of the influence of temperature change LCD of LCD.For example, optical characteristics (for example, the viscosity of refractive index, specific inductive capacity, elasticity coefficient and liquid crystal) is inversely proportional to the heat energy of liquid crystal molecule, and along with its value of rising of liquid crystal temperature reduces.
Be installed in that LCD goes up or also change along with temperature with the operating characteristic of the integrated element of LCD.
Temperature sensor is arranged on the printed circuit board (PCB) (PCB) that a plurality of driving circuits are installed, to detect the temperature of LCD.Yet PCB is arranged on the back side of LCD usually, and it is provided with lamp and any other heat generating member.Temperature sensor is not arranged on the front of the LCD that is formed with the LC layer.Therefore, temperature sensor detects the temperature at the LCD back side with big temperature fluctuation.Very big by the difference of the temperature of detected temperature of temperature sensor and LC layer, and based on the LCD temperature compensation out of true of LC layer back temperature.
Another defective of said structure is that temperature sensor independently is installed on the PCB.This is independently installed has increased the design of LCD redundancy, thereby has increased production cost.
Summary of the invention
The objective of the invention is to solve the problem of conventional art.
In one aspect, the present invention is the temperature sensor that is used to have the display of substrate.This sensor comprises the temperature sensing line that forms on substrate, wherein, the temperature sensing line is an electric conductor.
On the other hand, the present invention is a thin-film transistor display panel, and it comprises substrate and and the thin film transistor (TFT) and the temperature sensing line that form on substrate.Thin film transistor (TFT) has gate electrode, source electrode and drain electrode.Formation temperature sense wire on the layer identical with gate electrode or source electrode and drain electrode.
On the other hand, the present invention is a LCD, the secondary signal line that it comprises pixel, is connected to first signal wire of pixel and is connected to pixel and intersects with first signal wire.LCD also comprises the temperature sensing line that separates with first and second signal wires, wherein, and formation temperature sense wire on the layer identical with first or secondary signal line.
On the other hand, the present invention is the driving circuit that is used to have the LCD of liquid crystal panel assembly.Driving circuit comprises digital variable resistance (DVR), is used to generate first voltage; Temperature sensing unit is connected to DVR and generates second voltage; And being total to voltage generator, it is connected to temperature sensing unit and generates the common-battery pressure based on second voltage with from the tertiary voltage that the liquid crystal panel assembly receives.
On the other hand, the present invention is control flicker system.Flashing control system comprises LCD, is provided with the liquid crystal panel assembly; Filming apparatus is used to take LCD; And electronic installation, be connected with filming apparatus with LCD.LCD comprises DVR, is used to generate first voltage; Temperature sensing unit is connected to DVR and generates second voltage; And be total to voltage generator, be connected to temperature sensing unit and generate the common-battery pressure based on second voltage with from the tertiary voltage that the liquid crystal panel assembly receives.
Description of drawings
By being described in detail with reference to the attached drawings its preferred embodiment, the present invention will be become apparent, wherein:
Fig. 1 is the block diagram according to the LCD of the embodiment of the invention;
Fig. 2 is the equivalent circuit diagram according to the pixel of the LCD of the embodiment of the invention;
Fig. 3 is the skeleton view according to the LCD of the embodiment of the invention;
Fig. 4 is the layout according to the tft array panel that is used for LCD of the embodiment of the invention;
Fig. 5 is the sectional view of the LCD shown in Figure 4 of V-V intercepting along the line;
Fig. 6 is VI-VI ' along the line-VI " sectional view of LCD shown in Figure 4 of intercepting;
Fig. 7 is the sectional view of the LCD shown in Figure 4 of VII-VII intercepting along the line;
Fig. 8 is the equivalent circuit diagram according to the temperature sensor of the embodiment of the invention;
Fig. 9 is with respect to the curve map according to the characteristic of the output voltage of the temperature variation of the temperature sensor of the embodiment of the invention;
Figure 10 is the block diagram of signal controller according to another embodiment of the present invention;
Figure 11 is the block diagram of LCD according to another embodiment of the present invention;
Figure 12 illustrates the flash adjustment system of LCD according to another embodiment of the present invention;
Figure 13 illustrates the block diagram of the flash adjustment system of LCD according to another embodiment of the present invention;
Figure 14 illustrates temperature sensing unit shown in Figure 13 and is total to the example of the circuit diagram of voltage generator;
Figure 15 illustrates based on the curve map of the resistance characteristic of the temperature of temperature sensor according to another embodiment of the present invention; And
Figure 16 a and 16b are the curve maps that the common-battery pressure of application of temperature compensation according to another embodiment of the present invention and not application of temperature compensation is shown.
Embodiment
Hereinafter, the present invention, the preferred embodiments of the present invention shown in it will more fully be described with reference to the accompanying drawings.Yet the present invention can implement with a lot of different forms, and is not limited to the embodiment described in the literary composition.
In the accompanying drawings, for the sake of clarity, enlarged the thickness in layer and zone.Identical label is represented components identical all the time.Should be appreciated that when mentioning element such as layer, film, zone, substrate or panel and " be positioned at " on another element, be meant that it is located immediately on another element, perhaps also may exist intervenient element.
The temperature sensor that is used for display device according to the embodiment of the invention, the thin-film transistor display panel that comprises temperature sensor and LCD will be described with reference to the drawings.
Fig. 1 is the block diagram according to the LCD of the embodiment of the invention, and Fig. 2 is the equivalent circuit diagram according to the pixel of the LCD of the embodiment of the invention, and Fig. 3 is the skeleton view according to the LCD of the embodiment of the invention.
With reference to figure 1, comprise LC panel assembly 300, gate drivers 400 and connected data driver 500, be connected to the grayscale voltage generator 800 of data driver 500 and the signal controller 600 of temperature sensing unit 50 and control said elements according to the LCD of the embodiment of the invention.
In structural drawing shown in Figure 2, LC panel assembly 300 comprises lower panel 100, upper panel 200 and intervenient LC layer 3.As Fig. 1 and Fig. 2, LC panel assembly 300 comprises many display signal line G 1-G nAnd D 1-D m, and a plurality of pixel PX of being connected with it and arranging with matrix form basically.
Display signal line G 1-G nAnd D 1-D mBe arranged on the lower panel 100, and comprise many gate lines G 1-G nWith many data line D 1-D mGate lines G 1-G nTransmission gating signal (being also referred to as sweep signal), and data line D 1-D mTransmission of data signals.Gate lines G 1-G nBasically extend upward and parallel to each other basically in first party, and data line D 1-D mBasically extend upward and parallel to each other basically in second party.First direction and second direction are perpendicular to one another basically.
Each pixel PX for example, is connected to i bar gate lines G i(i=1,2 ..., n) and j bar data line Dj (i=1,2 ..., m) pixel PX, include and be connected to signal wire G iAnd D jOn-off element Q.Each pixel PX also comprises LC capacitor C lc and the memory capacitance Cst that is connected to on-off element Q.If do not need, can ignore memory capacitance Cst.
On-off element Q (for example, TFT) is arranged on the lower panel 100, and has three terminals: be connected to gate lines G iControl end; Be connected to data line D jInput end; And the output terminal that is connected to LC capacitor C lc and memory capacitance Cst.
LC capacitor C lc comprises the pixel electrode that is arranged on the lower panel 100 191 and is arranged on common electrode 270 on the upper panel 200 as two terminals.Be arranged on LC layer 3 between two electrodes 191 and 270 as the dielectric layer of LC capacitor C lc.Pixel electrode 191 is connected to on-off element Q, and common electrode 270 is provided with common-battery pressure Vcom.Common electrode 270 covers the whole surface of upper panel 200.In certain embodiments, common electrode 270 can be arranged on the lower panel 100, and electrode 191 and 270 can be strip or band shape.
Memory capacitance Cst is the auxiliary capacitor that is used for LC capacitor C lc.Memory capacitance Cst comprises pixel electrode 191 and the independent data line (not shown) that is arranged on the lower panel 100.Signal wire is overlapping by insulator and pixel electrode 191 between signal wire and pixel electrode 191, and signal wire is provided with predetermined voltage (for example, common-battery is pressed Vcom).Alternatively, memory capacitance Cst comprises pixel electrode 191 and the adjacent gate polar curve that is known as first previous gate line (previous gate line).In this case, be gripped with insulator between first previous gate line and the pixel electrode 191.
Can realize colored the demonstration with multitude of different ways.A kind of implementation method requires space segmentation, and each pixel is represented a kind of primary colors uniquely thus, makes the spatial summation of pixel groups represent desired color.Another kind method wants seeking time to cut apart, and the different primary colors of each pixel order ground expression makes the temporal summation of primary colors be considered to desired color thus.Schematic group of primary colors comprises red, green and blue.Fig. 2 illustrates the example that the implementation space is cut apart, and wherein, each pixel includes the color filter 230 of expression primary colors in the zone of upper panel 200, and this color filter is arranged on the opposite of pixel electrode 191 with respect to the LC layer.Alternatively, color filter 230 can be arranged on the top of pixel electrode 191 on the lower panel 100 or below.
As shown in Figure 2, on upper panel 200, form photomask 220 (for example, being used to prevent the black matrix (black matrix) of light loss), and have corresponding to the opening in the zone of pixel electrode 191 or color filter 230.
On the outside surface of the panel 100 of panel assembly 300 and 200, be attached with a pair of polarizer (not shown) that is used to make light polarization.
Grayscale voltage generator 800 produces the two group grayscale voltages (or two group benchmark grayscale voltages) relevant with the transmissivity of pixel.One group of grayscale voltage presses Vcom to have positive pole with respect to common-battery, and another group grayscale voltage presses Vcom to have negative pole corresponding to common-battery.
Gate drivers 400 is connected to the gate lines G of panel assembly 300 1-G n, and synthetic gate-on voltage Von and grid cut-off voltage Voff, be used to be applied to gate lines G with generation 1-G nGating signal.
Data driver 500 is connected to the data line D of panel assembly 300 1-D m, and to data line D 1-D mApply the data voltage of choosing from grayscale voltage, this grayscale voltage is provided by grayscale voltage generator 800.If 800 of grayscale voltage generators provide the benchmark grayscale voltage (it is with opposite corresponding to the grayscale voltage of whole gray scales) of scheduled volume, data driver 500 is cut apart the benchmark grayscale voltage, to generate corresponding to the grayscale voltage of whole gray scales and choose data voltage from the grayscale voltage that generates.
Formation temperature sensing cell 50 on LC panel assembly 300, and comprise temperature sensor 51.Temperature sensor 51 generates the temperature sensing signal Vs corresponding to the temperature that senses, and sensing signal Vs is outputed to signal controller 600.
With reference to figure 3, LC panel assembly 300 is divided into viewing area DA and external zones PA.On the DA of viewing area, form LC layer 3.External zones PA is mainly along the edge setting of LC panel assembly 300, and covered by light shielding part 220.The temperature sensor 51 of temperature sensing unit 50 is installed on external zones PA.
As shown in Figure 3, on LC panel assembly 300, form four temperature sensors 51.In described specific embodiment, two temperature sensors 51 are installed along a side of LC panel assembly 300, and two temperature sensors 51 are installed along the not homonymy of LC panel assembly 300 in addition.Yet the present invention is the quantity and the position of limit temperature sensor 51 not.For example, can have, and temperature sensor 51 can differently be configured on the LC panel assembly 300, with the temperature of sensing LC panel assembly 300 greater or less than four temperature sensors 51.
Signal controller 600 is based on temperature sensing signal Vs control gate driver 400 and data driver 500 from temperature sensing unit 50.
Realize that each drive unit 400,500,600 and 800 can be used as integrated circuit (IC) chip that is installed on the panel assembly 300 and realizes, can be used as band and carry a packaging part (TCP) and be installed on the flexible printed circuit board and be attached to LC panel assembly 300, or be installed on the independent printed circuit board (PCB) (PCB).Alternatively, drive unit 400,500,600 and 800 can be along display signal line G 1-G nAnd D 1-D mQ is integrated in the LC panel assembly 300 with the TFT on-off element.Select as another kind, drive unit 400,500,600 and 800 can be used as the IC chip and realizes, and at least one in them or at least one circuit component that comprises in them can be realized in the outside of IC chip.
As mentioned above, LC panel assembly 300 comprises two panels 100 and 200, and the panel 100 with thin film transistor (TFT) is known as the tft array panel.Because the temperature sensor 51 of formation temperature sensing cell 50 on tft array panel 100, so will be with reference to the tft array panel 100 of figure 4 to Fig. 7 detailed descriptions according to the embodiment of the invention.
Fig. 4 is the layout according to the tft array panel that is used for LCD of the embodiment of the invention, Fig. 5 is the sectional view of the LCD shown in Figure 4 of V-V intercepting along the line, Fig. 6 is VI-VI ' along the line-VI " sectional view of LCD shown in Figure 4 of intercepting, and Fig. 7 is the sectional view of the LCD shown in Figure 4 of VII-VII intercepting along the line.
On by the insulated substrate of making such as the material of clear glass or plastic cement 110, form many gate lines 121, temperature sensing line 125 and many storage electrode lines 131.
Gate line 121 transmission gating signals, and extend upward in first party basically.Each bar in the gate line 121 includes a plurality of gate electrodes 124 and has large-area end 129, and this large tracts of land is used for contacting with other layer or external drive circuit.
The gate driver circuit (not shown) that is used to generate gating signal can be installed in flexible print circuit (FPC) film (not shown), and this gate driver circuit can be attached to substrate 110, is directly installed on the substrate 110, or is integrated in the substrate 110.Can extend gate line 121, to be connected to the driving circuit that is integrated in the substrate 10.
Temperature sensing line 125 is laterally extending with square-wave form basically.When the length of temperature sensing line 125 increased, temperature tolerance and temperature sensitivity also increased.
Temperature sensing line 125 comprises having large-area two ends 126 and 127, and this large tracts of land is used for contacting with other layer or external drive circuit on its each end.An end 126 is used as input end with received signal, and another end 127 is used as output terminal with output signal.
Provide predetermined voltage to storage electrode line 131, and each bar in the storage electrode line 131 all has the part with gate line 121 substantially parallel extensions.A plurality of storage electrode 133a and 133b stretch out from the part of the storage electrode line 131 that extends in parallel with gate line 121.In the storage electrode line 131 each all is arranged between two gate lines 121, and the part of the storage electrode line 131 that extends in parallel with gate line 121 in two adjacent gate polar curves 121 more close another.Each bar among storage electrode 133a and the 133b all has anchor portion and free end.The anchor portion of storage electrode 133b is very wide and be connected to the part of the storage electrode line 131 parallel with gate line 121.Fixing end has rectilinear branches (branch) and the branch of a curve from its extension.Yet the specific part of the storage electrode line 131 shown in it is not limited to the present invention, and storage electrode line 131 can have different shapes and arrangement.
Gate line 121, temperature sensing line 125 and storage electrode line 131 comprise two conducting films with different physical characteristicss.Two conducting films are lower film and the upper membrane that is arranged on the lower film.Lower film is preferably made by low resistivity metal, and this low resistivity metal comprises and contains Al metal (for example, Al or Al alloy), contains Ag metal (for example, Ag or Ag alloy) and contain Cu metal (for example, Cu or Cu alloy), is used to reduce signal delay or pressure drop.Upper membrane is preferably made by the material (for example, containing Mo metal (Mo or Mo alloy), Cr, Ta or Ti) that has with such as identical good physical, chemistry and contact characteristics of other material of tin indium oxide (ITO) or indium zinc oxide (IZO).The example combinations of two films is bottom Al (alloy) film and top Mo (alloy) film.
In Fig. 5,, represent bottom and upper membrane respectively by additional alphabetical p and q for gate electrode 124, temperature sensing line 125 and storage electrode line 131.
In certain embodiments, lower film is made by the excellent contact material, and upper membrane is made by low resistivity material.In this case, can remove upper membrane 129q and the end 126 of temperature sensing line 125 and 127 the upper membrane 126q and the 127q of the end 129 of gate line 121, to expose lower film 129p, 126p and 127p.In addition, gate line 121, temperature sensing line 125 and storage electrode line 131 can comprise the individual layer of preferably being made by above-mentioned material.Alternatively, gate line 121, temperature sensing line 125 and storage electrode line 131 can be made by other metal or conductors that are fit to by some.
The side of gate line 121, temperature sensing line 125 and storage electrode line 131 is with respect to the surface tilt of substrate 110, with the pitch angle of formation scope at about 30-80 degree.Preferably, form gate line 121, temperature sensing line 125 and storage electrode line 131 by sputter.
On gate line 121, temperature sensing line 125 and storage electrode line 131, form the gate insulator of preferably making 140 by silicon nitride (SiNx) or monox (SiOx).
Form a plurality of semiconductor tapes 151 (referring to Fig. 4) on gate insulator 140, it is preferably made by amorphous silicon hydride (being abbreviated as " a-Si ") or polysilicon.Semiconductor tape 151 with the vertical substantially direction of gate line 121 bearing of trends on extend, and near gate line 121 and storage electrode line 131, broaden.Therefore, semiconductor tape 151 covers large-area gate line 121 and storage electrode line 131.Each bar in the semiconductor tape 151 includes a plurality of projections (projection) 154 of stretching out to gate electrode 124.
On semiconductor tape 151, form a plurality of Ohmic contact bands 161 and island 165.Ohmic contact band 161 and island 165 preferably have the n+ hydrogenation a-Si of N type impurity (for example, phosphorus) to make by heavy doping, are perhaps made by silicide.Each Ohmic contact band 161 includes a plurality of projections 163, and projection 163 and Ohmic contact island 165 are positioned on the projection 154 of semiconductor tape 151 in couples.
The side of semiconductor tape 151 and Ohmic contact portion 161 and 165 surface tilt with respect to substrate 110 are to form the preferably pitch angle in about 30-80 degree scope.
On Ohmic contact portion 161,165 and gate insulator 140, form many data lines 171 and a plurality of drain electrode 175.
Although data line 171 and gate line 121 are electrically insulated from each other, data line 171 transmission of data signals and basic and semiconductor tape 151 extend abreast, to intersect with gate line 121.Every data line 171 also intersects with storage electrode line 131, and passes between storage electrode 133a and 133b.Every data line 171 includes multiple source electrode 173 and end 179.Source electrode 173 is partly overlapping and be crescent basically with gate electrode 124.End 179 has and is used for the large tracts of land that contacts with other layer or driving circuit.The data drive circuit (not shown) that is used to generate data-signal is installed on the fpc film (not shown), and this data drive circuit can be attached to substrate 110, is directly installed on the substrate 110, or is integrated in the substrate 110.Can extension data line 171, to be connected to the driving circuit that is integrated in the substrate 110.
Drain electrode 175 and data line 171 separate and are arranged on respect to gate electrode 124 opposite of source electrode 173.In the drain electrode 175 each includes wide end and narrow end.Wide end and storage electrode line 131 are overlapping, and narrow end is partly surrounded by source electrode 173.
The projection 154 of gate electrode 124, source electrode 173, drain electrode 175 and semiconductor tape 151 forms TFT.TFT has the raceway groove that forms in the projection 154 between source electrode 173 and drain electrode 175.
Data line 171 and drain electrode 175 are preferably made by refractory metal (for example, Cr, Mo, Ta, Ti or its alloy).Yet they can have the sandwich construction that comprises refractory metal film (not shown) and low-resistivity film (not shown).The example of sandwich construction is the double-decker that comprises bottom Cr/Mo (alloy) film and top Al (alloy) film; And three-decker with bottom Mo (alloy) film, middle Al (alloy) film and top Mo (alloy) film.Yet, be not limited to the present invention, can make data line 171 and drain electrode 175 by any suitable metal or conductor.
Data line 171 has the edge external form of inclination with drain electrode 175, makes the edge sidewall form the pitch angle of about 30-80 degree.
Can form data line 171 and drain electrode 175 by sputter.
Ohmic contact portion 161 and 165 between lower floor's semiconductor tape 151 and on cover between conductor 171 and 175, and reduce the contact resistance of interlayer.Although narrower than data line 171 at a lot of local semiconductor tapes 151, as mentioned above, they become wideer near gate line 121 and storage electrode line 131.Widening of semiconductor tape 151 helps to make surface smoothing, thereby reduced the possibility that gate line disconnects.In planimetric map, semiconductor tape 151 covers and data line 171 and drain electrode 175 and Ohmic contact portion of lower floor 161 and 165 essentially identical areas.Yet semiconductor tape 151 also comprises not the some parts that is covered by data line 171 and drain electrode 175, for example, and the part between source electrode 173 and drain electrode 175.
On the exposed portions serve of data line 171, drain electrode 175 and semiconductor tape 151, form passivation layer 180.Passivation layer 180 is preferably made by inorganic or organic insulator, and it can have smooth surface.The example of inorganic insulator comprises silicon nitride and monox.Organic insulator can have photonasty and less than about 4.0 specific inductive capacity.Passivation layer 180 can comprise the lower film of inorganic insulator and the upper membrane of organic insulator.The advantage of double membrane structure is that it makes passivation layer 180 have the insulation characterisitic of organic insulator, prevents that simultaneously the exposed portions serve of semiconductor tape 151 from being destroyed by organic insulator.
Passivation layer 180 has and is used for exposing respectively the end 179 of data line 171 and a plurality of contact holes 182 and 185 of drain electrode 175.Passivation layer 180 and gate insulator 140 have a plurality of contact holes.Contact hole 181 exposes the upper membrane 129q of the end 129 of gate line 121.Contact hole 186 and 187 exposes the end 126 of temperature sensing line 125 and 127 upper membrane 126q and 127q respectively.A plurality of contact hole 183a expose near the part of the storage electrode line 131 the anchor portion of storage electrode 133b, and a plurality of contact hole 183b exposes the rectilinear branches of the free end of storage electrode 133b.
On passivation layer 180, form a plurality of pixel electrodes 191, a plurality of cross-over connection (overpass) 83 of portion and a plurality of assisted parts 81,82,86 and 87 that contact.They are preferably made by transparent conductor (for example, ITO or IZO) or reflection conductor (for example, Ag, Al, Cr or its alloy).
Pixel electrode 191 is by contact hole 185 physics and be electrically connected to drain electrode 175, makes pixel electrode 191 receive the data voltage from drain electrode 175.According to the data voltage that receives, pixel electrode 191 and the common electrode 270 that is provided with the color filter panel 200 that common-battery presses produce electric field in liquid crystal layer.Electric field determines to be arranged on the orientation of liquid crystal molecule (not shown) in the liquid crystal layer 3 between two panels 100 and 200.Form the electric capacity that is called " liquid crystal capacitance " by pixel electrode 191 and common electrode 270, the voltage that it is applied by the back storage at TFT.
Pixel electrode 191 is overlapping with storage electrode line 131 and storage electrode 133a, 133b.Pixel electrode 191, connected drain electrode 175 and storage electrode line 131 form the additional capacitor that is called " memory capacitance ".Memory capacitance improves the store voltages capacity of liquid crystal capacitance.
Pixel electrode 191 is overlapping with adjacent gate lines 121, to improve the aperture ratio.
Contact assisted parts 81,82,86 and 87 is connected respectively to the end 126 and 127 and the end 179 of data line 171 of end 129, the temperature sensing line 125 of gate line 121 by contact hole 181,182,186 and 187.Contact assisted parts 81,82,86 and 87 protection ends 129,126,127 and 179, and improve end 129,126,127 and 179 and the adhesion of external device (ED).
Above gate line 121, form cross-over connection portion 83.Cross-over connection portion 83 be connected respectively to by contact hole 183a and 183b the exposed portions serve of storage electrode line 131 and storage electrode 133b free end expose rectilinear branches.Contact hole 183a and 183b are arranged on the two ends of one of gate line 121 relative to one another.The defective that storage electrode 133a and 133b and cross-over connection portion 83 can be used to repair gate line 121, data line 171 or TFT.
The temperature sensing line 125 that forms with gate line 121 is the resistance with the variable resistance that changes according to temperature.Therefore, temperature sensing line 125 is as temperature sensor 51.
Temperature sensing line 125 can form has about 2mm or littler width a and about 2mm or littler length b.In Fig. 4, mark " a " and " b ".
By sputter, utilize the metal formation temperature sense wire 125 identical with the metal that is used to form gate line 121.Because this metal has good surface stability, so the surface fracture of temperature sensing line 125 seldom occurs, and temperature sensing line 125 to produce the wrong possibility that reads very little.
Be illustrated in the temperature sensor shown in Fig. 4 to Fig. 7 by the equivalent circuit diagram shown in Fig. 8, it will be described in detail subsequently.
Fig. 8 is the equivalent circuit diagram according to the temperature sensor of the embodiment of the invention.
With reference to figure 8, temperature sensor 51 can be expressed as the resistance R s that is connected to driving voltage Vdd and be connected resistance R c between temperature sensor 51 and the earth terminal.Resistance R c is a fixed value resistance.
Provide driving voltage Vdd from the end 126 of temperature sensing line 125 to temperature sensor 51, and 127 outputs of the end by being connected to resistance R c are as the output signal Vout of temperature sensing signal Vs.
As shown in the formula, obtain output signal Vout
[equation 1]
Vout = Rc Rs + Rc Vdd
Rs is expressed as:
Rs = ρ L WD
And ρ is expressed as:
ρ＝ρ 0(1+αT)
Here, ρ is the resistivity of temperature sensing line 125, and W is the width of temperature sensing line 125, and L is the length of temperature sensing line 125, and D is the thickness of temperature sensing line 125.In addition, ρ 0For under predetermined temperature () resistivity for example, about 20 ℃, α is the temperature coefficient (TCR) of resistance, that is, expression is with respect to the coefficient of the resistance change of temperature variation, and T is a temperature.
The electricalresistivity 0With temperature coefficient α be constant predetermined value, width W, length L and thickness D are determined by design.
As a result, the resistance value of resistance R s changes based on temperature T.Therefore, the voltage of output signal Vout also changes based on temperature.
As mentioned above, when design temperature sense wire 125, the width W of limiting temperature sense wire 125, length L and thickness D, and according to these sizes characteristic of limiting temperature sense wire 125 at least in part.
When making temperature sensor 51, the electricalresistivity is shown below by Al, Cu, Pt, Cr or Mo 0With temperature coefficient α.
[form]
Metal ρ 0(10 -8Ωcm) α(10 -4/k)
Al 2.69 42.0
Cu 1.67 43.0
Pt 10.6 39.2
Cr 12.1 -
Mo 5 -
For good sensitivity and the stability that obtains temperature sensor 51, preferably, temperature coefficient α is big and stable.Temperature sensor 51 is preferably made by the metal that has with the linear electricalresistivity of temperature variation.
When the temperature sensing line 125 that temperature sensor 51 manufactured as Fig. 4 to Fig. 7, as described below, change according to temperature T from the output signal Vout of temperature sensor 51.
Fig. 9 is the temperature that arrives with the temperature sensor measurement according to the embodiment of the invention curve map as the output voltage of function.
Use has the curve map that double-deck temperature sensing line 125 produces Fig. 9.Lower film comprises Al, and upper membrane comprises Mo, and driving voltage Vdd is approximately 2V, and the resistance value of resistance R c is approximately 1.7K Ω.
As shown in Figure 9, output voltage V out approximately-10 ℃ to about 80 ℃ scope along with temperature linearity changes.Temperature sensor 51 with temperature sensing line 125 has the susceptibility of about 1.83 (mv/ ℃).Therefore, output voltage V out can handle (for example, by independently amplifier amplification) without external signal and directly use.
Temperature sensing line 125 can be formed by the layer identical with data line 171 or pixel electrode 191.Temperature sensing line 125 can have the three-decker that comprises bottom Mo (alloy) film, middle Al (alloy) film and top Mo (alloy) film.Yet, temperature sensing line 125 can use any metal with big temperature coefficient α, this metal produces consistent result at the two ends of different structure (run), and the electricalresistivity with linear change along with temperature T, and this metal can be used for temperature sensing line 125.
Below, will describe the operation of LCD in detail.
The input control signal that RGB picture signal R, G, B is provided and is used to control the demonstration of RGB picture signal R, G, B to signal controller 600 from the external graphics controller (not shown).Input control signal comprises vertical synchronizing signal Vsync, horizontal-drive signal Hsync, master clock signal MCLK and data enable signal DE.Signal controller 600 also receives the temperature sensing signal Vs from temperature sensing unit 50.
Signal controller 600 generates grid control signal CONT1 and data controlling signal CONT2, and handles picture signal R, G, B, is applicable to the operation of panel assembly 300 to make them based on input control signal.Subsequently, signal controller 600 provides grid control signal CONT1 to gate drivers 400, and provides picture signal DAT and the data controlling signal CONT2 that has handled to data driver 500.Signal controller 600 is based on temperature sensing signal control gate driver 400 and data driver 500.To describe the operation of signal controller 600 subsequently in detail.
Grid control signal CONT1 comprises and is used to indicate the scanning start signal STV that begins to scan and at least one to be used to control the clock signal of the output time of gate-on voltage Von.Grid control signal CONT1 also can comprise the output enable signal OE of the duration that is used to limit gate-on voltage Von.
Data controlling signal CONT2 comprises horizontal synchronization start signal STH that the data transmission that is used to notify one group of pixel begins, is used for indication to data line D 1-D mApply the load signal LOAD and the data clock signal HCLK of data voltage.Data controlling signal CONT2 also can comprise the reverse signal RVS (pressing Vcom with respect to common-battery) that is used for the reversal data polarity of voltage.
In response to the data controlling signal CONT2 from signal controller 600, data driver 500 receives the view data DAT bag from one group of pixel of signal controller 600.Data driver 500 converts view data DAT the analog data voltage chosen to and data voltage is applied to data line D from grayscale voltage 1-D m, this grayscale voltage is provided by grayscale voltage generator 800.
Gate drivers 400 is in response to the grid control signal CONT1 from signal controller 600, and Von is applied to gate lines G with gate-on voltage 1-G nIn response to being applied to gate lines G 1-G nGate-on voltage Von, open on-off element Q.Provide to pixel by the on-off element Q that opens and to be applied to data line D 1-D mData voltage.
Data voltage and common-battery press the difference table between the Vcom to be shown the voltage at LC capacitor C lc two ends, and it is known as pixel voltage sometimes.The orientation of LC molecule depends on the size of pixel voltage among the LC capacitor C lc, and the orientation of molecule has determined to pass the polarisation of light of LC layer 3.Polarizer is converted into transmittance with light polarization.
By being that unit repeats this process (represented by " 1H ", and equate with the one-period of horizontal cycle signal Hsync and data enable signal DE) with the horizontal cycle, gate-on voltage Von is offered whole gate lines G in turn in an image duration 1-G nTherefore, data voltage is applied to whole pixels.When a frame end next frame began, control was applied to the reverse control signal RVS of data driver 500, made the reversal of poles (being called as " frame counter-rotating ") of data voltage.Alternatively, also can control reverse control signal RVS, the polarity that make to flow into the data voltage of data line in a frame, reverse (for example, row counter-rotating and point reverse).Select the polarity of the data voltage in the packets of information of reversing (for example, row counter-rotating and some counter-rotating) as another.
As mentioned above, the operating characteristic of the element of driving circuit or liquid crystal changes on a large scale according to the temperature of LCD.Therefore, also need by considering to change next adjustment compensating operation on a large scale based on LCD.The example of compensating operation is the adjusting operation of DCC (dynamic capacitance compensation) and gate-on voltage Von size.
Because the characteristic of liquid crystal changes according to temperature, the response time of liquid crystal also changes thereupon.In the DCC control that is used for improving the liquid crystal response time, signal controller 600 is controlled DCC based on the temperature of being determined by temperature sensing signal Vs.
The threshold voltage of on-off element Q changes according to temperature.Therefore, signal controller 600 changes the size of the reference voltage that is used to generate gate-on voltage Von based on temperature.Thus, regulate gate-on voltage, make the cycle that changes with temperature during the on-off element Q of opening, suitably controlled.
In above-mentioned compensating operation, the DCC of signal controller 600 will be described with reference to Figure 10.
Figure 10 is the block diagram of signal controller according to another embodiment of the present invention.
With reference to Figure 10, signal controller 600 comprises frame memory 611, question blank unit 612 and signal output unit 613.Provide picture signal G to frame memory 611 for a frame of each pixel n(hereinafter, being called " present image signal ").Signal output unit 613 is connected to frame memory 611 and question blank unit 612, and provides temperature sensing signal Vs and present image signal to signal output unit.
Frame memory 611 applies picture signal G for the previous frame of pixel to question blank unit 612 and signal output unit 613 N-1(hereinafter, being called " previous picture signal ").The present image signal G that storage receives from external device (ED) n
Question blank unit 612 comprises a plurality of question blank LU1-LUp.The picture signal that each question blank LU1-LUp storage has been revised, this picture signal have based on previous picture signal G N-1With present image signal G nThe value that limits for the temperature sensing signal Vs of function.The picture signal of having revised is based on the experimental result of the difference between the temperature of considering LC panel assembly 300 and previous picture signal and the present image signal etc. and limited.Difference between picture signal of having revised and the previous picture signal is greater than the difference between present image signal before revising and the previous picture signal.
Below, will describe the operation of signal controller 600 in detail.
Signal controller 600 is determined temperature based on the temperature sensing signal Vs from temperature sensing unit 50, and chooses among the question blank LU1-Lup one according to the temperature of determining.For example, when the temperature of determining fell in first scope, signal output unit 613 can be chosen the first question blank LU1, and when the temperature of determining fell in the p scope, signal output unit 613 can be chosen p question blank LUp.
Signal output unit 613 is based on the present image signal G from the outside nWith previous picture signal G from frame memory 611 N-1Choose corresponding correction image signal.The correction image signal of selecting is applied to data driver 500 as picture signal DAT.
Therefore, it is bigger or littler than the size of the target data voltage that is defined as the present image signal to be applied to the size of data voltage of each pixel.Thus, can reduce and reach the required time quantum of desirable pixel voltage.
In certain embodiments, question blank can only be stored with respect to the previous picture signal of the predetermined quantity with predetermined space (hereinafter, be called " the previous picture signal of benchmark ") the correction image signal (hereinafter, be called " benchmark correction image signal ") and correspond respectively to the previous picture signal of benchmark predetermined quantity the correction image signal (hereinafter, be called " benchmark present image signal "), replace corresponding to previous picture signal G N-1With present image signal G nThe correction image signal.By using the interpolation of previous picture signal of benchmark and benchmark present image signal, calculate the picture signal that other have been revised.By doing like this, reduced the size of question blank.
Temperature sensor according to the embodiment of the invention can be used for plasma display (PDP) or organic light emitting display OLED and LCD, with the temperature of sensing display panel.
Because the semiconductor that uses metal rather than have a high light reaction is made temperature sensor, the present invention obtains stable temperature detection.Owing to do not use the semiconductor with high light reaction, the luminous effect when making temperature detection minimizes.
In the present invention, do not need to be used to block the independent photomask of incident light.Therefore, manufacturing process and the structure and the one-piece construction of temperature sensor have been simplified.
Because temperature sensor directly is integrated in the LC panel assembly with gate line and data line, thus by temperature sensor measurement to the temperature and the actual temperature of LC layer approaching substantially, thereby improved the precision of temperature compensation.Under the situation that does not increase considerably production cost, realized the raising of precision.
In addition, picture signal is applied to pixel based on the sensing temperature similar to LC layer temperature.Therefore, shorten the response time of liquid crystal, thereby improved the picture quality of display device.By temperature sensor directly is integrated in the LC panel assembly, owing to need on LCD, the outside not being installed by independent temperature sensor, so reduced production cost.
Because, therefore reduced owing to the error rate that incident light caused from the outside by the insensitive metal of light is made temperature sensor.Because do not need to be used to block the independent structure of incident light, therefore simplified the manufacturing process and the structure of temperature sensor.
In addition, as mentioned above,, therefore reduced the damaged and wrong probability that reads because use metal wire to make temperature sensor with surface of good stability.
The flash adjustment system of the said temperature sensor that uses another embodiment of the present invention will be described with reference to figures 11 to Figure 16 B.
Figure 11 is the block diagram of LCD according to another embodiment of the present invention, Figure 12 is used for the synoptic diagram of the flash adjustment system of LCD according to another embodiment of the present invention, Figure 13 illustrates the block diagram of the flash adjustment system of LCD according to another embodiment of the present invention, and Figure 14 illustrates the example of temperature sensing unit shown in Figure 13 and the circuit diagram that is total to voltage generator.
LCD shown in LCD shown in Figure 11 and Fig. 1 is basic identical, therefore will omit all unnecessary descriptions.Different with the LCD of Fig. 1, the LCD of present embodiment comprises common voltage generator 700 and the digital variable resistance (DVR) 750 that is used to generate common-battery pressure Vcom.Altogether voltage generator 700 is pressed Vcom to LC panel assembly 300 transmission common-batteries, and being used for provides and be connected with it to temperature sensing unit 50.Temperature sensor can be the part of temperature sensing unit 50 shown in Figure 3.That is, this part can provide temperature sensing signal Vs to signal controller, and remainder can be connected between DVR 750 and the common voltage generator 700.
DVR 750 generates the reference voltage that provides to temperature sensing unit 50 is provided based on being stored in value in its storer (not shown), and it can be an integrated circuit.
Voltage generator 700 produces common-battery based on the bucking voltage Vc from temperature sensing unit 50 and presses Vcom altogether, and reception is pressed Vcomf by the common-battery of LC panel assembly 300 outputs.In this case, the reference voltage V ref that is used for reducing the LCD flicker can be stored in the storer of DVR 750.
Referring to figs 12 to Figure 14, the flash adjustment system comprises LCD 11, filming apparatus 21 and computing machine 31 according to another embodiment of the present invention.
LCD 11 processes are used to test the final test of flicker, and are connected to computing machine 31.
Filming apparatus 21 also is connected to computing machine 31, and it takes a part or the whole screen of LCD 11 screens.Filming apparatus 21 is measured the brightness of screens, thereby is electric signal with the brightness transition that measures.In certain embodiments, electric signal can be the voltage that is transferred to computing machine 31.
Computing machine 31 is connected to the DVR 750 of LCD 11, and DVR 750 is according to the control signal CONT3 output reference voltage from computing machine 31.Computing machine 31 passes through I with DVR 750 2C interface interconnects each other.
Temperature sensing unit 50 comprises temperature sensor Rs shown in Fig. 8 and fixed value resistance Rc, and comprises the fixed value resistance R1 that is used to receive reference voltage V ref.In this case, it should be noted that the position of temperature sensor Rs and fixed value resistance Rc is opposite with the embodiment of Fig. 8 with respect to driving voltage Vdd in temperature sensing unit 50 and ground voltage GND.Locational this change causes the output voltage V out among Fig. 9 to become higher.
Voltage generator 700 can comprise operational amplifier OP altogether, and it can be a differential amplifier.The non-inverting input terminal (+) of operational amplifier OP is connected to node N.Inverting terminal (-) is connected to the feedback common-battery by resistance R 2 and presses Vcomf, and is connected to output terminal by resistance R 3.
Determine to be input to the voltage of the non-inverting input terminal of operational amplifier OP by superposition principle, that is, the voltage of node N, as follows.
[equation 2]
Vc = Rth 1 Rc + Rth 1 Vdd + Rth 2 R 1 + Rth 2 Vref
Here, Rth1 is for the resistance R 1 of 0V voltage Vref and the equivalent resistance of Rc, and Rth2 is for the resistance R s of 0V voltage Vdd and the equivalent resistance of Rc.
As mentioned above, voltage generator 700 produces common-battery pressure Vcom based on temperature-compensated voltage Vc rather than reference voltage V ref altogether, and this reference voltage V ref receives from DVR 750.
Therefore, although the characteristic of LCD 11 can change according to temperature, when considering this variation, can reduce the flicker of LCD 11.
Figure 15 illustrates to depend on the curve map of the resistance characteristic of the detected temperature of temperature sensor according to another embodiment of the present invention, and Figure 16 a and 16b illustrate the curve map that the common-battery that has and do not have temperature compensation is according to another embodiment of the present invention pressed respectively.
With reference to Figure 15, the resistance value of temperature sensor 51 and the linear ratio of the increase of temperature.
Therefore, because temperature sensor 51 has the resistance value Rt of the temperature T t of the LCD 11 when carrying out final test, and has the resistance value Rn of the temperature T n when using, so the increase of temperature during use will cause the increase of bucking voltage Vc for the user.As a result, shown in Figure 16 A, common-battery presses Vcom to increase.
The data voltage that is generated by data driver 500 also increases pro rata with temperature.Because in traditional device, it is the irrelevant constant of temperature with shown in Figure 16 B that existing common-battery is pressed, and therefore when temperature increases, may occur glimmering on LCD.
Yet according to the present invention, common-battery presses Vcom to increase along with temperature.Common-battery pressure Vcom is positioned at the center of data voltage, to prevent flicker.
Directly use output signal, and need not through signal Processing (for example, being amplified) by independent amplifier.
In addition, can accurately control the flicker of not expecting of depending on temperature by pressing based on the Signal Regulation common-battery that obtains from the serviceability temperature sensor.
Though describe the present invention in detail with reference to preferred embodiment, should be appreciated that the present invention is not limited to the disclosed embodiments, on the contrary, its covering is included in the purport and the various changes in the scope of claims and is equal to replacement.

Claims (4)

1. LCD comprises:
Pixel;
First signal wire is connected to described pixel;
The secondary signal line is connected to described pixel, and intersects with described first signal wire; And
The temperature sensing line separates with described first and second signal wires, and wherein said temperature sensing line is formed on the layer identical with described first signal wire or described secondary signal line,
Wherein said temperature sensing line comprises the first end that driving voltage is provided and the second end of output signal output, and
Wherein said the second end is connected to fixed value resistance, and described fixed value resistance is connected to earth terminal.
2. LCD according to claim 1 also comprises based on the signal controller from the demonstration of the described pixel of signal controlling of described temperature sensing line.
3. LCD according to claim 2 also comprises:
Data driver is used for converting the picture signal that is corrected from described signal controller to data-signal, described data-signal is applied to described first signal wire; And
Gate drivers, the gating signal that is used for being used to control described pixel is applied to described secondary signal line.
4. LCD according to claim 3, wherein, described signal controller receives the picture signal from external device (ED), and based on the described picture signal of previous picture signal correction, the picture signal that is corrected with output, and according to the correction from the described picture signal of signal change of described temperature sensing line.
CN2006100993306A 2005-07-15 2006-07-17 Temperature sensor, thin film transistor array panel, liquid crystal display Expired - Fee Related CN1920505B (en)

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