CN1900363B - Scavenging solution and uses thereof - Google Patents
Scavenging solution and uses thereof Download PDFInfo
- Publication number
- CN1900363B CN1900363B CN200510027989.6A CN200510027989A CN1900363B CN 1900363 B CN1900363 B CN 1900363B CN 200510027989 A CN200510027989 A CN 200510027989A CN 1900363 B CN1900363 B CN 1900363B
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- China
- Prior art keywords
- scavenging solution
- water
- surplus
- molecular weight
- polyacrylic acid
- Prior art date
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- 230000002000 scavenging effect Effects 0.000 title claims abstract description 62
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 238000005260 corrosion Methods 0.000 claims abstract description 15
- 239000003112 inhibitor Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 32
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 23
- 229920002125 Sokalan® Polymers 0.000 claims description 14
- 239000004584 polyacrylic acid Substances 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 150000003839 salts Chemical class 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 4
- -1 nitrogen-containing heterocycle compound Chemical class 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000003002 pH adjusting agent Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 20
- 230000007797 corrosion Effects 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 5
- 230000007423 decrease Effects 0.000 abstract description 2
- 239000007769 metal material Substances 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 42
- 238000005498 polishing Methods 0.000 description 30
- 239000007788 liquid Substances 0.000 description 24
- 239000004372 Polyvinyl alcohol Substances 0.000 description 23
- 229920002451 polyvinyl alcohol Polymers 0.000 description 23
- 239000008367 deionised water Substances 0.000 description 21
- 229910021641 deionized water Inorganic materials 0.000 description 17
- 239000000126 substance Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000007334 copolymerization reaction Methods 0.000 description 3
- 150000001298 alcohols Chemical group 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 150000003217 pyrazoles Chemical class 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 231100000167 toxic agent Toxicity 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3757—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/16—Metals
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a kind of scavenging solution, it comprises at least one carrier, wherein also comprises a kind of anti-corrosion of metal inhibitor; The invention also discloses the purposes of described scavenging solution in clean metal substrate.Compared with typical scavenging solution, scavenging solution provided by the invention greatly reduces the extent of corrosion of metallic substance, thus tool has the following advantages: (1) makes the ratio of defects of metallic surface obviously decline; (2) Flatness of metallic surface is greatly improved; (3) improve the quality of products, additional income rate, (4) improve cleaning efficiency.
Description
Technical field
The present invention relates to a kind of scavenging solution and uses thereof, particularly relate to a kind of scavenging solution cleaning integrated circuit (IC) wafer.
Background technology
Typical scavenging solution mainly deionized water, superoxol and weak ammonias etc. in prior art, these scavenging solutions are mainly used in cleaning the debris in preorder technique.This preorder technique is such as: 1) CMP (Chemical Mechanical Polishing) process, and the metallic surface after chemically machinery polished can remain a small amount of polishing fluid; 2) etching goes high light resistance technique, also can remain high light blocking solution after this technique; 3) depositing operation and other techniques etc.After debris is wherein cleaned up, but the corrosion of metallic surface still exists.The corrosion of metallic surface can affect metallic surface Flatness, also makes defect level remain high, thus reduces product yield and earning rate.
Some scavenging solutions are disclosed, as US Patent No. 2004/0204329, US2003/0216270, US2004/0082180, US6147002, US6443814, US6719614, US6767409, US6482749 etc., it is all the using method about scavenging solution or scavenging solution.As the scavenging solution that the scavenging solution in patent US6147002 is about a kind of acidic aqueous solution, it also comprises the fluorine-containing material of 0.5 ~ 5 % by weight, and this scavenging solution is suitable for the ic component cleaning copper metallic semiconductor wafer.But the scavenging solution in above-mentioned patent, or containing toxicant, unfriendly to environment; Or the high not defect of cleaning efficiency; Or cleaning use range is narrow, the such as scavenging solution of US6443814 patent is merely able to the wafer cleaning copper-containing metal layer.
Summary of the invention
The object of the invention is, in order to solve the problem, to provide a kind of scavenging solution.
A kind of scavenging solution, it comprises at least one carrier, and it also comprises a kind of anti-corrosion of metal inhibitor.
Wherein, described anti-corrosion of metal inhibitor is preferably polycarboxylic acid and/or its salt.
Described polycarboxylic acid and/or its salt are preferably polyacrylic compounds and/or its salt.
Described polycarboxylic acid is preferably polyacrylic compounds, or be acrylic compounds and cinnamic copolymerization, or be the copolymerization of acrylic compounds and MALEIC ANHYDRIDE, or be the copolymerization of acrylic compounds and esters of acrylic acid, their molecular weight 2,000 ~ 1,000, between 000, preferably between 10000 ~ 500000.
Described polycarboxylic acid and/or its salt preferred formula I:
Formula I
Wherein, R
1, R
2be the alkyl that hydrogen atom or carbonatoms are less than 3 by oneself, R
3for H, K, Na or NH
4.
Described polyacrylic compounds and/or its salt more preferably polyacrylic acid, its molecular weight is preferably 10, and 000 ~ 30,000.
Scavenging solution of the present invention can also comprise pH adjusting agent.
Scavenging solution of the present invention also preferably comprises nitrogen-containing heterocycle compound, to improve cleaning performance further.
The preferred benzotriazole of described nitrogen-containing heterocycle compound, pyrazoles and/or imidazoles, more preferably benzotriazole.
Described carrier is preferably alcohols and/or water, and described alcohols can be glycerol.
In scavenging solution of the present invention, the mass concentration of this anti-corrosion of metal inhibitor is preferably 0.0001 ~ 20%, and this carrier is surplus.
Another object of the present invention is to provide the purposes of described scavenging solution in metal substrate, and described metal substrate is aluminium, copper, tantalum, tantalum nitride, titanium, titanium nitride, silver, gold, preferred aluminium.
Positive progressive effect of the present invention is: compared with typical scavenging solution, scavenging solution provided by the invention greatly reduces the extent of corrosion of metallic substance, thus tool has the following advantages: (1) makes the ratio of defects of metallic surface obviously decline; (2) Flatness of metallic surface is greatly improved; (3) improve the quality of products, additional income rate, (4) improve cleaning efficiency.
Accompanying drawing explanation
Figure 1A is scanning electronic microscope (SEM) figure of the metallic surface after using the cleaning of washed with de-ionized water liquid;
Figure 1B is the SEM figure of the metallic surface after using scavenging solution of the present invention cleaning;
Fig. 2 A is atomic force microscope (AFM) figure of the Metal Surface Roughness after using washed with de-ionized water;
Fig. 2 B is the atomic force microscope figure of the Metal Surface Roughness after using scavenging solution of the present invention cleaning;
Fig. 3 A is the Optical microscope dark field figure using deionized water to carry out the metallic aluminum surface after brushing cleaning, and the black matrix in figure is metallic aluminium, and white round dot is corrosion;
Fig. 3 B is the Optical microscope dark field figure using scavenging solution of the present invention to carry out the metallic aluminum surface after brushing cleaning.
Embodiment
Embodiment 1
To be aluminum metal surface after scavenging solution (pH=5.3) the cleaning chemical mechanical polishing liquid polishing of surplus containing 800ppm polyacrylic acid (molecular weight is 30,000) and water.(1) technique of chemical mechanical polishing liquid polished aluminum metal is: the rotating speed 100rpm of overdraft 1psi, polishing disk, rubbing head rotating speed 105rpm, scavenging solution flow velocity 200ml/min, scavenging period 1min; (2) and then respectively use deionized water and polyvinyl alcohol (PVA) round brush to scrub 1min with this clear Xian's liquid and PVA round brush to the aluminum metal surface on wafer, round brush rotating speed is 100rpm; (3) taking-up deionized water and PVA round brush scrub 1min again.Wash result is shown in Figure 1B.
Result shows, and compared with the wafer (as Figure 1A) using washed with de-ionized water liquid to clean, the ratio of defects of the metallic surface (as Figure 1B) after using scavenging solution of the present invention to clean obviously declines, and the Flatness of metallic surface improves.
Embodiment 2
To be aluminum metal surface after scavenging solution (pH=4.3) the cleaning chemical mechanical polishing liquid polishing of surplus containing 600ppm polyacrylic acid (molecular weight is 30,000), 500ppmBTA (azimidobenzene) and water.(1) technique of chemical mechanical polishing liquid polished aluminum metal is: the rotating speed 100rpm of overdraft 1psi, polishing disk, rubbing head rotating speed 105rpm, scavenging solution flow velocity 200ml/min, scavenging period 1min; (2) and then respectively use deionized water and polyvinyl alcohol (PVA) round brush to scrub 1min with this clear Xian's liquid and PVA round brush to the aluminum metal surface on wafer, round brush rotating speed is 100rpm; (3) taking-up deionized water and PVA round brush scrub 1min again.Wash result is shown in Fig. 2 B.
Result shows, the roughness doing wafer (as Fig. 2 A) surface of scavenging solution cleaning with deionized water is 3.72A, and the roughness using the metallic surface (as Fig. 2 B) after scavenging solution of the present invention cleaning is 3.00A, metallic surface spot corrosion obviously declines, and the roughness of metallic surface improves.
Embodiment 3
Will containing 1200ppm polyacrylic acid (molecular weight be 30,000), 500ppmBTA and water are the aluminum metal surface on the wafer after scavenging solution (pH=4.4) the cleaning chemical mechanical polishing liquid polishing of surplus.(1) technique of chemical mechanical polishing liquid polished aluminum metal is: the rotating speed 100rpm of overdraft 1psi, polishing disk, rubbing head rotating speed 105rpm, scavenging solution flow velocity 200ml/min; (2) and then respectively scrub 1min with this clear Xian's liquid and PVA round brush to the aluminum metal surface on wafer with deionized water and PVA round brush, round brush rotating speed is 100rpm; (3) 30min in ionized water is statically placed in after scrubbing; (4) taking-up deionized water and PVA round brush scrub 1min again.
Result shows: in step (2), employ the corrosion (see Fig. 3 A) that the clear Xian's liquid containing anti-corrosion of metal inhibitor of the present invention effectively can prevent metallic aluminium, and uses on the metallic aluminium of washed with de-ionized water and have a large amount of corrosion (see Fig. 3 B).
Embodiment 4
Will containing 1200ppm polyacrylic acid (molecular weight be 10,000), 500ppmBTA and water are the aluminum metal surface after the scavenging solution (pH=4.6) of surplus cleans chemical mechanical polishing liquid polishing.(1) technique of chemical mechanical polishing liquid polished aluminum metal is: the rotating speed 100rpm of overdraft 1psi, polishing disk, rubbing head rotating speed 105rpm, scavenging solution flow velocity 200ml/min, scavenging period 1min; (2) and then respectively scrub 1min with this clear Xian's liquid and PVA round brush to the aluminum metal surface on wafer with deionized water and PVA round brush, round brush rotating speed is 100rpm; (3) taking-up deionized water and PVA round brush scrub 1min again.
Embodiment 5
Will containing 25ppm polyacrylic acid (molecular weight be 30,000), 500ppmBTA and water are the aluminum metal surface after scavenging solution (pH=3.0) the cleaning chemical mechanical polishing liquid polishing of surplus.(1) technique of chemical mechanical polishing liquid polished aluminum metal is: rotating speed 100rpm, the rubbing head rotating speed 105rpm of overdraft 1psi, polishing disk, scavenging solution flow velocity 200ml/min, scavenging period 1min (2) and then scrub 1min with deionized water and PVA round brush and this clear Xian's liquid and PVA round brush to the aluminum metal surface on wafer respectively, and round brush rotating speed is 100rpm; (3) taking-up deionized water and PVA round brush scrub 1min again.
Embodiment 6
Will containing 10ppm polyacrylic acid (molecular weight be 10,000), 500ppmBTA and water are the copper metallic face after the scavenging solution (pH=3.0) of surplus cleans chemical mechanical polishing liquid polishing.(1) technique of chemical mechanical polishing liquid polish copper metal is: the rotating speed 100rpm of overdraft 1psi, polishing disk, rubbing head rotating speed 105rpm, scavenging solution flow velocity 200ml/min, scavenging period 1min; (2) and then respectively scrub 1min with this clear Xian's liquid and PVA round brush to the copper metallic face on wafer with deionized water and PVA round brush, round brush rotating speed is 100rpm; (3) taking-up deionized water and PVA round brush scrub 1min again.
Embodiment 7
Will containing 20% polyacrylic acid (molecular weight be 10,000), 500ppmBTA and water are the copper metallic face after the scavenging solution (pH=7.4) of surplus cleans chemical mechanical polishing liquid polishing.(1) technique of chemical mechanical polishing liquid polish copper metal is: the rotating speed 100rpm of overdraft 1psi, polishing disk, rubbing head rotating speed 105rpm, scavenging solution flow velocity 200ml/min, scavenging period 1min; (2) and then respectively scrub 1min with this clear Xian's liquid and PVA round brush to the copper metallic face on wafer with deionized water and PVA round brush, round brush rotating speed is 100rpm; (3) taking-up deionized water and PVA round brush scrub 1min again.
Claims (3)
1. a scavenging solution, it comprises at least one carrier, also comprises a kind of anti-corrosion of metal inhibitor, it is characterized in that, described anti-corrosion of metal inhibitor is polycarboxylic acid and/or its salt, and comprises a kind of nitrogen-containing heterocycle compound, and wherein said scavenging solution is specially the one of following formula:
Containing 800ppm molecular weight be 30,000 polyacrylic acid and water be the scavenging solution of surplus, its pH=5.3;
The polyacrylic acid, 500ppmBTA (azimidobenzene) and the water that are 30,000 containing 600ppm molecular weight are the scavenging solution of surplus, its pH=4.3;
Containing the polyacrylic acid that 1200ppm molecular weight is 30,000,500ppmBTA and water are the scavenging solution of surplus, its pH=4.4;
Containing the polyacrylic acid that 1200ppm molecular weight is 10,000,500ppmBTA and water are the scavenging solution of surplus, its pH=4.6;
Containing the polyacrylic acid that 25ppm molecular weight is 30,000,500ppmBTA and water are the scavenging solution of surplus, its pH=3.0;
Containing the polyacrylic acid that 10ppm molecular weight is 10,000,500ppmBTA and water are the scavenging solution of surplus, its pH=3.0.
2. scavenging solution according to claim 1, characterized by further comprising pH adjusting agent.
3. the purposes of scavenging solution in metal substrate as claimed in claim 1, is characterized in that described metal substrate is aluminium, copper, tantalum, titanium, silver or golden.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200510027989.6A CN1900363B (en) | 2005-07-21 | 2005-07-21 | Scavenging solution and uses thereof |
| PCT/CN2006/001701 WO2007009364A1 (en) | 2005-07-21 | 2006-07-17 | Washing solution and the use of it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200510027989.6A CN1900363B (en) | 2005-07-21 | 2005-07-21 | Scavenging solution and uses thereof |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012105755386A Division CN103060831A (en) | 2005-07-21 | 2005-07-21 | Cleaning liquid and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1900363A CN1900363A (en) | 2007-01-24 |
| CN1900363B true CN1900363B (en) | 2016-01-13 |
Family
ID=37656342
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200510027989.6A Active CN1900363B (en) | 2005-07-21 | 2005-07-21 | Scavenging solution and uses thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN1900363B (en) |
| WO (1) | WO2007009364A1 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101290482A (en) * | 2007-04-19 | 2008-10-22 | 安集微电子（上海）有限公司 | Cleaning fluid for cleaning plasma etching residue |
| CN101412950A (en) * | 2007-10-19 | 2009-04-22 | 安集微电子（上海）有限公司 | Cleaning liquid for plasma etching residue |
| CN101424887A (en) * | 2007-11-02 | 2009-05-06 | 安集微电子（上海）有限公司 | Semiconductor wafer metal substrate web corrosion prevention liquid and its use method |
| CN101842747B (en) * | 2007-11-02 | 2012-07-25 | 安集微电子（上海）有限公司 | Corrosion inhibitor for semiconductor chip metal substrate and use method thereof |
| CN101614971B (en) * | 2008-06-27 | 2013-06-12 | 安集微电子（上海）有限公司 | Photoresist cleaning agent |
| CN102296294B (en) * | 2010-06-25 | 2016-01-20 | 安集微电子（上海）有限公司 | A kind of metal corrosion protection solution and application thereof |
| CN103882444A (en) * | 2012-12-19 | 2014-06-25 | 安集微电子（上海）有限公司 | Cleaning fluid and its application |
| CN104894575A (en) * | 2015-05-27 | 2015-09-09 | 南京科技职业学院 | Degreasing agent for chemical equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1086521A (en) * | 1992-10-08 | 1994-05-11 | 罗姆和哈斯公司 | The polymer composition of chain combination |
| CN1221810A (en) * | 1997-11-28 | 1999-07-07 | 日本电气株式会社 | Method for cleaning substrate and cleaning solution |
| US6350560B1 (en) * | 2000-08-07 | 2002-02-26 | Shipley Company, L.L.C. | Rinse composition |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6297336B1 (en) * | 1998-07-02 | 2001-10-02 | Nippon Shokubai Co., Ltd. | Detergent builder, production process therefor, and poly(meth)acrylic acid (or salt) polymer and use thereof |
| JP2001185516A (en) * | 1999-12-24 | 2001-07-06 | Kao Corp | Abrasive assistant |
| TW575660B (en) * | 2001-09-07 | 2004-02-11 | Dai Ichi Kogyo Seiyaku Co Ltd | Nonflammable water-based cutting fluid composition and nonflammable water-based cutting fluid |
| CN1242039C (en) * | 2003-09-29 | 2006-02-15 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor wafer cleaning liquid and cleaning method |
-
2005
- 2005-07-21 CN CN200510027989.6A patent/CN1900363B/en active Active
-
2006
- 2006-07-17 WO PCT/CN2006/001701 patent/WO2007009364A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1086521A (en) * | 1992-10-08 | 1994-05-11 | 罗姆和哈斯公司 | The polymer composition of chain combination |
| CN1221810A (en) * | 1997-11-28 | 1999-07-07 | 日本电气株式会社 | Method for cleaning substrate and cleaning solution |
| US6350560B1 (en) * | 2000-08-07 | 2002-02-26 | Shipley Company, L.L.C. | Rinse composition |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007009364A1 (en) | 2007-01-25 |
| CN1900363A (en) | 2007-01-24 |
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