CN1975397A - Tungstic acid thin film air-sensitive sensor surface modifying method - Google Patents
Tungstic acid thin film air-sensitive sensor surface modifying method Download PDFInfo
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- CN1975397A CN1975397A CN 200610130491 CN200610130491A CN1975397A CN 1975397 A CN1975397 A CN 1975397A CN 200610130491 CN200610130491 CN 200610130491 CN 200610130491 A CN200610130491 A CN 200610130491A CN 1975397 A CN1975397 A CN 1975397A
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Abstract
The invention discloses a surface modification method of the tungstic oxide film gas sensor. The process includes: cleaning the Al203 base sheet; spurting the interdigital electrode on the base sheet in the magnetron sputtering device using the platinum as the target and the argon gas as the working gas; spurting the tungstic oxide film on the base sheet with the interdigital electrode using the tungsten as the target and the argon, oxygen as the working gas; spurting the metal layer on the film using the Ti, Ni, Mo, Va, Platinum, Aurum or Pd as the target material and the argon gas as the working gas; heat process to the metal layer in air and get the surface modifying gas sensor. The film is uniform and high purity which is good adhesion to the base bottom and the parameter is easy to control. The gas sensor has the low working temperature and good selectivity, also the response and recovery time are shot.
Description
Technical field
The present invention relates to a kind of surface modifying method of gas-sensitive WO 3 film sensor, belong to the gas sensor technology.
Background technology
In commercial production and daily life, people have used gas sensor that poisonous gas and inflammable and explosive property gas are detected widely, to guarantee to produce the safety with life.Thereby also more and more higher to the requirement of gas sensor, this certainly will promote the development of high sensitivity, high reliability, high selectivity gas sensor.In numerous gas sensitives, WO
3Show one's talent with its excellent gas-sensitive property and high stability.People have carried out twenties years the research of WO 3 film, but great majority research just begins to carry out the research of gas-sensitive property recent years at performances such as its electrochromism, photochromic, galvanochemistry.Tungstic acid is a kind of n N-type semiconductor N material, when it is exposed to tested gas (NOx, H
2, CO, NH
3, C
2H
5OH) in the time of in, the oxygen that adsorbs from air is in the forbidden band of tungstic acid material as a kind of acceptor state of electronics, and the reaction of gas on its surface caused the variation of acceptor state in the part surface coverage, thereby caused the variation of conductivity.The research of gas-sensitive WO 3 film sensor at present is in the ascendant, but no matter adopting sol-gal process, vacuum vapor deposition method still is the tungstic acid air-sensitive film that sputtering method prepares, and all equally facing to following problem: 1) working temperature is too high, and it is to NO
2Working temperature is 200～250 ℃, to H
2Working temperature is 300～350 ℃, is 300～350 ℃ to the CO working temperature, to NH
3Working temperature is 250～350 ℃, to C
2H
5OH gas working temperature is 300～350 ℃; 2) poor selectivity, in the time of 250～350 ℃, approaching to the sensitivity of above-mentioned gas; 3) response/release time long, reach 5 minutes/20 minutes.These problems are perplexing the researcher of various countries always, and the present invention makes these problems all obtain in various degree solution and improvement.
Summary of the invention
The surface modifying method that the purpose of this invention is to provide a kind of gas-sensitive WO 3 film sensor, the WO 3 film sensor that adopts this method to make have excellent gas-sensitive property.
The present invention is realized that by the following technical programs a kind of surface modifying method of gas-sensitive WO 3 film sensor is characterized in that comprising following process:
1) with thickness is the Al of 350～400 μ m
2O
3Substrate carries out ultrasonic cleaning with acetone, through deionized water rinsing, and then uses the absolute ethyl alcohol ultrasonic cleaning, again through deionized water rinsing, and dry for standby;
2) obtaining Al through the step 1) cleaning
2O
3Substrate surface is close to interdigital platinum electrode mask, again substrate is placed the vacuum chamber of DPS-III type ultrahigh vacuum subtend target magnetic control sputtering equipment, adopting quality purity is that 99.95% metal platinum is as target, quality purity be 99.999% argon gas as working gas, and with the base vacuum degree less than 4.0 * 10
-4Pa, sputter operating air pressure are 1.0～2.0Pa, and sputtering power is 70W～80W, sputtering time 5～8 minutes, the argon gas flow is 25ml/min, and the operating conditions that substrate temperature is 25 ℃ obtains the interdigital platinum electrode that thickness is 0.1 μ m～0.3 μ m to substrate sputter platinum.
3) with step 2) Al that interdigital platinum electrode is arranged that makes
2O
3Substrate places the vacuum chamber of DPS-III type ultrahigh vacuum subtend target magnetic control sputtering equipment, adopting quality purity is that 99.995% tungsten is as target, quality purity be 99.999% argon gas and quality purity be 99.995% oxygen as working gas, with the base vacuum degree less than 2 * 10
-4Pa, the sputter operating air pressure is 0.5～2.0Pa, sputtering power is 170～250W, sputtering time 5～90 minutes, argon gas, oxygen gas flow are respectively 35ml/min and 15ml/min or 25ml/min and 25ml/min, 25～300 ℃ of substrate temperatures are for process conditions obtain the WO 3 film layer that thickness is 0.04 μ m～0.6 μ m to the substrate sputter tungsten that interdigital platinum electrode is arranged.
4) step 3) is prepared the vacuum chamber that the gained film sample places DPS-III type ultrahigh vacuum subtend target magnetic control sputtering equipment, adopt quality purity to be 99.995% titanium, nickel, molybdenum or vanadium metal respectively or adopt quality purity to be 99.95% platinum, gold or palladium noble metal respectively as target, quality purity be 99.999% argon gas as working gas, with the base vacuum degree less than 2 * 10
-4Pa, the sputter operating air pressure is 0.5～2.0Pa, sputtering power is 40～250W, sputtering time 10s～30min, the argon gas flow is 20～30ml/min, 25～300 ℃ of substrate temperatures have sputter on the substrate of WO 3 film layer to sputter for process conditions, obtaining thickness is the metal level of titanium, nickel, molybdenum, vanadium, platinum, gold or the palladium of 0.04 μ m～0.1 μ m.
5) step 4) is prepared the gained film sample and put into high-temperature heater, in dry air, be heated to 300～600 ℃, thermal treatment 3～8 hours.Thereby obtain gas-sensitive WO 3 film sensor through modification.
The invention has the advantages that the WO 3 film thickness that adopts magnetically controlled sputter method to obtain is even, purity is high, tack is good between film and the substrate, and the diameter of particle that constitutes film is more even, realizes the nanoparticle film easily, easy control of process conditions.The metal level of the titanium oxide layer on WO 3 film surface, nickel oxide layer, molybdenum oxide layer, vanadium oxide layer or platinum, gold, palladium is significantly improved the air-sensitive performance of WO 3 film, the working temperature of gas-sensitive WO 3 film sensor has been reduced reach 80 ℃; Improved its selectivity, when working temperature is 120 ℃, only to NO
2Has susceptibility; And accelerated its response/release time, reached 10 seconds/40 seconds.
Description of drawings
Fig. 1 is the gas-sensitive WO 3 film sensor structural representation with method preparation of the present invention.
Among the figure: 1 is Al
2O
3Substrate, 2 is the WO 3 film layer, and 3 is interdigital platinum electrode, and 4 is metal oxide layer or metal level;
Fig. 2 is the vertical view of Fig. 1.
Fig. 3 is 1.5 * 10 for embodiment 1 prepared gas-sensitive WO 3 film sensor in volume fraction
-5The NO of %
2The graph of relation of medium sensitivity and working temperature.
Among the figure: curve 1 is that the titanium sputtering time is the performance curve of the gas-sensitive WO 3 film sensor of 20min, curve 2 is that the titanium sputtering time is the performance curve of the gas-sensitive WO 3 film sensor of 10min, curve 3 is that the titanium sputtering time is the performance curve of the gas-sensitive WO 3 film sensor of 30min, and the performance curve of the gas-sensitive WO 3 film sensor of surface modification treatment is not passed through in curve 4 expressions;
Fig. 4 is that embodiment 2 prepared gas-sensitive WO 3 film sensors are when working temperature is 120 ℃, to NO
2, H
2S, CO, NH
3And C
2H
5The sensitivity histogram of OH gas;
Fig. 5 is 5 * 10 for embodiment 6 prepared gas-sensitive WO 3 film sensors in volume fraction
-5The NH of %
3In response/release time curve map.
Among the figure: curve 1 is the performance curve that does not pass through the gas-sensitive WO 3 film sensor of surface modification treatment, and curve 2 is that the platinum sputtering time is the performance curve of the gas-sensitive WO 3 film sensor of 10s;
Embodiment
1) adopting thickness is 350 μ m, long 2.5cm, the Al of wide 1.0cm
2O
3Ceramic substrate carried out ultrasonic cleaning 10 minutes with acetone, through deionized water rinsing, and then with absolute ethyl alcohol ultrasonic cleaning 10 minutes, again through deionized water rinsing, 50 ℃ of dry for standby; 2) Al after oven dry
2O
3Ceramic substrate tightens and sticks the interdigital mask of iron that thickness is 100 μ m.The Al of mask will be posted
2O
3Substrate places the vacuum chamber of DPS-III type ultrahigh vacuum subtend target magnetic control sputtering equipment, with quality purity is that 99.95% metal platinum is as target, quality purity be 99.999% argon gas as working gas, the concrete steps of magnetron sputtering are: take out back of the body end vacuum to 2.5 * 10
-4Pa, argon gas flow are 25ml/min, and the sputter operating air pressure is 2.0Pa, and sputtering power is 80W, sputtering time 7 minutes, and 25 ℃ of substrate temperatures obtain interdigital platinum electrode.3) with the above-mentioned Al that is shaped on interdigital platinum electrode
2O
3Substrate places the vacuum chamber of DPS-III type ultrahigh vacuum subtend target magnetic control sputtering equipment, with quality purity is that 99.995% tungsten is as target, quality purity be 99.999% argon gas and quality purity be 99.995% oxygen as working gas, the concrete steps of magnetron sputtering are: take out back of the body end vacuum to 1.0 * 10
-4Pa, argon gas and oxygen flow are respectively 35ml/min and 15ml/min, and the sputter operating air pressure is 1.0Pa, and sputtering power is 200W, sputtering time 30 minutes, 25 ℃ of substrate temperatures, obtaining thickness is the WO 3 film layer of 0.15 μ m.4) above-mentioned WO 3 film sample is placed the vacuum chamber of DPS-III type ultrahigh vacuum subtend target magnetic control sputtering equipment, with quality purity is that 99.995% titanium is as target, quality purity be 99.999% argon gas as working gas, be 1.5 * 10 with the base vacuum degree
-4Pa, sputter operating air pressure are 1.0Pa, and sputtering power is 170W, and sputtering time 10min, argon gas flow are 25ml/min, and 25 ℃ of substrate temperatures have sputtered titanium on the substrate of WO 3 film layer to sputter for process conditions; 5) the WO 3 film sample that above-mentioned gained is coated with titanium is put into high-temperature heater, is heated to 400 ℃ in dry air, thermal treatment 3 hours.Obtain the titanium oxide layer that thickness is 0.03 μ m at the tungstic acid laminar surface.Thereby obtain the gas-sensitive WO 3 film sensor of modification.The above-mentioned gas-sensitive WO 3 film sensor that makes is carried out sensitivity test, gas-sensitive WO 3 film sensor is placed static distribution test macro, to system's heating, temperature range is 80～350 ℃, and feeding volume fraction is 1.5 * 10
-5The NO of %
2Gas, the resistance value of tungstic acid air-sensitive film before and after record gas feeds, the sensitivity that obtains is Rg/Ra, and wherein Rg is the resistance value in the gas, and Ra is airborne resistance value.The relation curve of sensitivity and working temperature is shown in curve among Fig. 32, the sensitivity of the gas-sensitive WO 3 film sensor of process surface modification treatment and working temperature relation curve 4 do not compare together, and the working temperature of gas-sensitive WO 3 film sensor has reduced by 80 ℃.
Present embodiment is similar to embodiment 1, and difference is: the sputtering time of Titanium is 20min in the step 4), obtains the titanium oxide layer that thickness is 0.06 μ m at the tungstic acid laminar surface.The gas-sensitive WO 3 film sensor that makes is carried out sensitivity test, and the relation curve of sensitivity and working temperature is shown in curve among Fig. 31.As can be seen from Figure 3, not only the working temperature of gas-sensitive WO 3 film sensor reduces greatly, and sensitivity increases substantially.
Embodiment 3
Present embodiment is similar to embodiment 1, and difference is: the sputter operating air pressure of titanium is 0.5Pa in the step 4), and sputtering time is 15min, and the argon gas flow is 22ml/min, obtains the titanium oxide layer that thickness is 0.04 μ m at the tungstic acid laminar surface.
Present embodiment is similar to embodiment 1, difference is: adopting quality purity in the step 4) is that 99.995% nickel is as target, the sputter operating air pressure is 0.5Pa, sputtering power is 50W, sputtering time is 30s, the argon gas flow is 22ml/min, obtains the nickel oxide layer that thickness is 0.06 μ m at the tungstic acid laminar surface.
Present embodiment is similar to embodiment 4, and difference is: sputtering time is 15s in the step 4), obtains the nickel oxide layer that thickness is 0.03 μ m at the tungstic acid laminar surface
Embodiment 6
Present embodiment is similar to embodiment 1, and difference is: adopt in the step 4) quality purity be 99.95% platinum as target, the sputter operating air pressure is 0.5Pa, sputtering power is 75W, sputtering time is 10s, the argon gas flow is 22ml/min.Obtain the platinum layer that thickness is 0.01 μ m at the tungstic acid laminar surface.Is 5 * 10 to the gained gas-sensitive WO 3 film sensor in volume fraction
-5The NH of %
3In carry out gas sensitivity test, working temperature is 240 ℃, sensitivity and reaction time relation curve are shown in curve among Fig. 52, the sensitivity of the gas-sensitive WO 3 film sensor of process surface modification treatment and reaction time relation curve 1 do not compare together, and all obviously shorten response/release time.
Embodiment 7
Present embodiment is similar to embodiment 6, and difference is: sputtering time is 20s in the step 4), obtains the platinum layer that thickness is 0.02 μ m at the tungstic acid laminar surface.
Embodiment 8
Present embodiment is similar to embodiment 6, and difference is: the sputter operating air pressure is 1Pa in the step 4), and sputtering time is 15s, obtains the platinum layer that thickness is 0.015 μ m at the tungstic acid laminar surface.
Claims (1)
1. the surface modifying method of a gas-sensitive WO 3 film sensor is characterized in that comprising following process:
1) with thickness is the Al of 350～400 μ m
2O
3Substrate carries out ultrasonic cleaning with acetone, through deionized water rinsing, and then uses the absolute ethyl alcohol ultrasonic cleaning, again through deionized water rinsing, and dry for standby;
2) obtaining Al through the step 1) cleaning
2O
3Substrate surface is close to interdigital platinum electrode mask, again substrate is placed the vacuum chamber of DPS-III type ultrahigh vacuum subtend target magnetic control sputtering equipment, adopting quality purity is that 99.95% metal platinum is as target, quality purity be 99.999% argon gas as working gas, and with the base vacuum degree less than 4.0 * 10
-4Pa, sputter operating air pressure are 1.0～2.0Pa, and sputtering power is 70W～80W, sputtering time 5～8 minutes, the argon gas flow is 25ml/min, and the operating conditions that substrate temperature is 25 ℃ obtains the interdigital platinum electrode that thickness is 0.1 μ m～0.3 μ m to substrate sputter platinum;
3) with step 2) Al that interdigital platinum electrode is arranged that makes
2O
3Substrate places the vacuum chamber of DPS-III type ultrahigh vacuum subtend target magnetic control sputtering equipment, adopting quality purity is that 99.995% tungsten is as target, quality purity be 99.999% argon gas and quality purity be 99.995% oxygen as working gas, with the base vacuum degree less than 2 * 10
-4Pa, the sputter operating air pressure is 0.5～2.0Pa, sputtering power is 170～250W, sputtering time 5～90 minutes, argon gas, oxygen gas flow are respectively 35ml/min and 15ml/min or 25ml/min and 25ml/min, 25～300 ℃ of substrate temperatures are for process conditions obtain the WO 3 film layer that thickness is 0.04 μ m～0.6 μ m to the substrate sputter tungsten that interdigital platinum electrode is arranged;
4) step 3) is prepared the vacuum chamber that the gained film sample places DPS-III type ultrahigh vacuum subtend target magnetic control sputtering equipment, adopt quality purity to be 99.995% titanium, nickel, molybdenum or vanadium metal respectively or adopt quality purity to be 99.95% platinum, gold or palladium noble metal respectively as target, quality purity be 99.999% argon gas as working gas, with the base vacuum degree less than 2 * 10
-4Pa, the sputter operating air pressure is 0.5～2.0Pa, sputtering power is 40～250W, sputtering time 10s～30min, the argon gas flow is 20～30ml/min, 25～300 ℃ of substrate temperatures have sputter on the substrate of WO 3 film layer to sputter for process conditions, obtaining thickness is the metal level of titanium, nickel, molybdenum, vanadium, platinum, gold or the palladium of 0.04 μ m～0.1 μ m;
5) step 4) is prepared the gained film sample and put into high-temperature heater, in dry air, be heated to 300～600 ℃, thermal treatment 3～8 hours, thus obtain gas-sensitive WO 3 film sensor through modification.
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| CNB2006101304917A CN100427939C (en) | 2006-12-21 | 2006-12-21 | Tungstic acid thin film air-sensitive sensor surface modifying method |
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| CNB2006101304917A CN100427939C (en) | 2006-12-21 | 2006-12-21 | Tungstic acid thin film air-sensitive sensor surface modifying method |
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| CN100427939C CN100427939C (en) | 2008-10-22 |
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