CN1967773B - Etching method of ditch road device - Google Patents
Etching method of ditch road device Download PDFInfo
- Publication number
- CN1967773B CN1967773B CN200510110470A CN200510110470A CN1967773B CN 1967773 B CN1967773 B CN 1967773B CN 200510110470 A CN200510110470 A CN 200510110470A CN 200510110470 A CN200510110470 A CN 200510110470A CN 1967773 B CN1967773 B CN 1967773B
- Authority
- CN
- China
- Prior art keywords
- gas
- etching
- ditch road
- lithographic method
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
The invention relates to an etching method of groove element, which comprises that using plasma gas to wash the chamber; using plasma gas to remove natural oxide film; using plasma gas to etch base board. The invention can wash chamber without affecting device, to improve etching stability.
Description
Technical field
The present invention relates to a kind of process of semiconductor device, relate in particular to a kind of lithographic method of ditch road device.
Background technology
In the manufacturing process of POWER MOS (power metal oxide semiconductor apparatus), need to the darker raceway groove of base plate carving and corrosion (＞10000A), general dry etching method uses carbon tetrafluoride (CF
4), hydrogen bromide (HB
r), chlorine (CL
2), oxygen (O
2) four kinds of gases, mainly in two steps:
At first raceway groove is before etching, and preceding engineering can be left the position of wanting the ditch road, does not need the place of etching to cover with oxide-film, and the etching gas with plasma state carries out etching then, as depicted in figs. 1 and 2.
Second step mainly was the oxygen (O with plasma state
2)+carbon tetrafluoride (CF
4)+argon gas (Ar) carries out self-cleaning to cavity, to remove the product in the cavity.Wherein, self-cleaning is used for stablizing the cavity atmosphere, guarantees technology stability.
Yet, in fact after the first step is finished, whole etching process finishes in fact, the shape of raceway groove all forms, and this moment silicon chip also in cavity, so the self-cleaning in second step inevitably also can act on above the silicon chip, be full of the oxygen (O of plasma state this moment around the silicon chip except cavity
2), carbon tetrafluoride (CF
4) and argon gas (Ar) (as shown in Figure 3), can form very thin one deck product film in channel surface, and the surface is become coarse (as shown in Figure 4).Shape and silicon chip surface to device exert an influence, and influence the electrical parameter of entire device to the end.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of lithographic method of ditch road device, and it can reach can realize cavity is carried out self-cleaning, again the purpose that device is not exerted an influence.
For solving the problems of the technologies described above, the lithographic method of a kind of ditch road device of the present invention may further comprise the steps: the first step is wanting the position in ditch road to leave, not needing the place of etching to cover with oxide-film; Second step was that the gas with plasma state carries out self-cleaning to cavity; The 3rd step was to remove the product film that produces because of self-cleaning with plasma-state gas; The 4th step was the gas etching substrate with plasma state; After etching finished, the silicon chip of having carved was taken out of outside the chamber, and next piece silicon chip can clean after entering the chamber again.
The gas of the plasma state described in second step is oxygen+carbon tetrafluoride+argon gas.
The gas of the plasma state described in the 3rd step is oxygen+carbon tetrafluoride.
The gas of the plasma state described in the 4th step is carbon tetrafluoride+hydrogen bromide+chlorine+oxygen.
Main etching gas in the 4th step is hydrogen bromide.
Compare with prior art, the present invention has following beneficial effect: lithographic method of the present invention had both kept in the original recipe the stable etching of deep trench and the cleaning of assurance cavity environment, the influence that self-cleaning brings can be removed again, the stability of POWER MOS (power metal oxide semiconductor apparatus) deep trench etching can be improved.
Description of drawings
Fig. 1 is by the etching process schematic diagram 1 of existing lithographic method to raceway groove;
Fig. 2 is by the etching process schematic diagram 2 of existing lithographic method to raceway groove;
Fig. 3 is the schematic diagram of raceway groove when carrying out self-cleaning by existing lithographic method;
Fig. 4 is the schematic diagram of raceway groove after finishing by existing lithographic method self-cleaning;
Fig. 5 is the schematic diagram that carries out self-cleaning by lithographic method of the present invention;
Fig. 6 is the schematic diagram that carries out producing after the self-cleaning product film by lithographic method of the present invention;
Fig. 7 is the schematic diagram that carries out removing after the etching product film by lithographic method of the present invention.
Embodiment
The present invention is further detailed explanation below in conjunction with accompanying drawing.
As shown in Figure 5, raceway groove is before etching, and preceding engineering at first can be left the position of wanting the ditch road, does not need the place of etching to cover with oxide-film, and the gas with plasma state carries out self-cleaning then.
As shown in Figure 6,, carry out self-cleaning earlier, therefore before etching, will form that layer product film, carry out etching then if use lithographic method of the present invention.
As shown in Figure 7, if use lithographic method of the present invention, in etching process, the product film that produces because of self-cleaning can be removed.
The present invention is with respect to prior art, and its mode of mainly taking is the foremost that the self-cleaning step of final step is put into whole steps, promptly cleans earlier, etching again.Before etching, clean, just can not be influential to next step shape that just can form of silicon chip, lip-deep influence then can be removed in etching process.After etching finished, the silicon chip of having carved shifted out outside the chamber, and next piece silicon chip can clean after entering the chamber again, therefore also can guarantee the cleaning of cavity environment.
Except cleaning the change of order, so etching condition and no change are to not influence of etching process.
From above diagram, as can be seen, carry out etching again, can reach the purpose that etching zanjon and cavity clean simultaneously, self-cleaning is not exerted an influence to device by first self-cleaning.
Claims (5)
1. the lithographic method of a ditch road device is characterized in that, may further comprise the steps: the first step is wanting the position in ditch road to leave, not needing the place of etching to cover with oxide-film; Second step was that the gas with plasma state carries out self-cleaning to cavity; The 3rd step was to remove the product film that produces because of self-cleaning with plasma-state gas; The 4th step was the gas etching substrate with plasma state; After etching finished, the silicon chip of having carved was taken out of outside the chamber, and next piece silicon chip can clean after entering the chamber again.
2. the lithographic method of ditch road device as claimed in claim 1 is characterized in that, the gas of the plasma state described in second step is oxygen+carbon tetrafluoride+argon gas.
3. the lithographic method of ditch road device as claimed in claim 1 is characterized in that, the gas of the plasma state described in the 3rd step is oxygen+carbon tetrafluoride.
4. the lithographic method of ditch road device as claimed in claim 1 is characterized in that, the gas of the plasma state described in the 4th step is carbon tetrafluoride+hydrogen bromide+chlorine+oxygen.
5. the lithographic method of ditch road device as claimed in claim 1 is characterized in that, the main etching gas in the 4th step is hydrogen bromide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200510110470A CN1967773B (en) | 2005-11-17 | 2005-11-17 | Etching method of ditch road device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200510110470A CN1967773B (en) | 2005-11-17 | 2005-11-17 | Etching method of ditch road device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1967773A CN1967773A (en) | 2007-05-23 |
| CN1967773B true CN1967773B (en) | 2010-05-05 |
Family
ID=38076467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200510110470A Active CN1967773B (en) | 2005-11-17 | 2005-11-17 | Etching method of ditch road device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1967773B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109166857A (en) * | 2018-09-03 | 2019-01-08 | 长江存储科技有限责任公司 | Semiconductor structure and forming method thereof |
-
2005
- 2005-11-17 CN CN200510110470A patent/CN1967773B/en active Active
Non-Patent Citations (1)
| Title |
|---|
| JP特开2005-203409A 2005.07.28 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1967773A (en) | 2007-05-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW200636857A (en) | Low-pressure removal of photoresist and etch residue | |
| TW200516663A (en) | A method of in-situ damage removal - post O2 dry process | |
| EP1081751A3 (en) | Methods of pre-cleaning dielectric layers of substrates | |
| TW200737346A (en) | Sequential oxide removal using fluorine and hydrogen | |
| TW200631091A (en) | Low-rressure removal of photoresist and etch residue | |
| WO2008005630A3 (en) | Methods for minimizing mask undercuts and notches for plasma processing system | |
| WO2003030238A1 (en) | Processing method | |
| WO2004111727A3 (en) | Methods of removing photoresist from substrates | |
| KR101913676B1 (en) | Substrate processing method and storage medium | |
| CN107564803B (en) | Etching method, process equipment, thin film transistor device and manufacturing method thereof | |
| CN102446724B (en) | Method for manufacturing gate electrode | |
| MY149338A (en) | Notch stop pulsing process for plasma processing system | |
| CN103000520B (en) | The lithographic method of MOS areal gate side wall layer | |
| CN100468690C (en) | Method for reducing contact resistance in high depth ratio self alignment etching | |
| CN1967773B (en) | Etching method of ditch road device | |
| KR100890072B1 (en) | Method and apparatus for manufacturing semiconductor device, computer storage medium, and storage medium for storing the processing recipe | |
| TW200627543A (en) | Plasma etching method | |
| JPH04237125A (en) | Dry-etching method | |
| JP5642427B2 (en) | Plasma processing method | |
| CN101567313A (en) | Grid manufacturing method | |
| KR101711647B1 (en) | Method for dielectric material removal between conductive lines | |
| EP3667706A3 (en) | Partially removing a semiconductor wafer | |
| CN103177955B (en) | A kind of manufacturing method thereof realizing peelable sidewall | |
| CN102412133B (en) | Technological method for forming radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) | |
| AU2003296844A1 (en) | Process for improving the surface roughness of a semiconductor wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131219 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20131219 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |