CN1963675B - Infiltrating type micro-image apparatus and process thereof - Google Patents
Infiltrating type micro-image apparatus and process thereof Download PDFInfo
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- CN1963675B CN1963675B CN 200510115212 CN200510115212A CN1963675B CN 1963675 B CN1963675 B CN 1963675B CN 200510115212 CN200510115212 CN 200510115212 CN 200510115212 A CN200510115212 A CN 200510115212A CN 1963675 B CN1963675 B CN 1963675B
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Abstract
This invention relates to one dipped micro image device and its process, which is applied in semiconductor process dipped micro image system, wherein, it provides one pair of crystal surface mobile lens element composed of one lens element and spray mouth and discharge element along lens element set, wherein, the spray and discharge element rolled around lens or to provide one selective spray mouth and discharge device composed of multiple alternating set.
Description
Technical field
The present invention relates to the little shadow technology in a kind of manufacture of semiconductor, particularly relate to a kind of submergence decline shadow equipment and processing procedure.
Background technology
Utilized by people for a long time as the general immersion optical technology of oil immersed type microtechnic (oil immersion microscopy).It normally utilizes a spot of oil plant to coat the micro-thing and the sample that will be amplified by high magnification, to reach the purpose that increases microcobjective numerical aperture (numerical aperture).Generally speaking, because dressing table and sample are to present static relatively state, so oil plant can remain on a suitable position.
In the photolithography in semiconductor technology,, utilize the technological actual numerical value aperture that is produced of liquid-immersed little shadow can be greater than 1 when when having adopted refractive index between projection camera lens and the wafer of being carved by figure greater than 1 liquid.Because bigger, and with wafer final camera lens vis-a-vis can be in liquid and in the non-air, so can reach numerical aperture greater than 1 with ray cast.When camera lens with ray cast in air the time, the internal reflection that may produce non-demand property at the interface between camera lens and the air.
Wavelength is that exposing to the sun of 193 nanometers (nanometer) penetrated the use that light helps the liquid-immersed shadow technology of declining, also or with have 157 nanometers or more the short wavelength expose to the sun penetrate light together arrange in pairs or groups use more suitable.Under the situation of using these wavelength, the photoresistance that protective cover film and warp were checked all can be had an effect.Camera lens that meets the requirements can not be too greatly or is too complicated, the suitable liquid of also must arranging in pairs or groups in addition.Because on semiconductor crystal wafer, utilizing the photolithography equipment of stepping repeat (step-and-repeat) that continuous exposure is carried out at a plurality of positions is to belong to a kind of dynamic routine, so the dressing table of semiconductor crystal wafer must remove to handle and hold flowing liquid.
Dressing table has two kinds of forms at least.When soaking pattern, crystal column surface can be in the state that immerses always.And when spray model, at one time down, the clean flow that has capacity is not necessarily whole crystal column surface to camera lens and wafer, between the space action immersing or fill.Concerning these two kinds of patterns, liquid how to deal carefully with outflow all is very important something.For instance, the liquid in flowing may cause atomic pollution, and one of them main source is exactly the bevel edge of wafer.Because the edge of wafer is via the conglobate polish process of wafer is formed, so can comprise a coarse relatively surface on the edge.Again because can't effectively control to the procedure operation of grinding wafer; Make some part of uneven surface itself; And be positioned on the uneven surface or near unnecessary material may resolve into the particulate structure easily, therefore must avoid again deposition (redeposition) phenomenon of these particulate materials on semiconductor crystal wafer critical surfaces (critical surface).
Therefore, a kind of immersion microlithography system that is applicable to semiconductor fabrication process must be provided.In submergence declines the field of shadow technology, the demand to this kind system is arranged, because of it can be in order to the direction of control flow, and then reduced atomic contamination phenomenon.
This shows that above-mentioned existing submergence declines the shadow technology on using, and obviously still has inconvenience and defective, and demands urgently further improving.In order to solve the submergence problem that shadow technology exists that declines; Relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly; But do not see always that for a long time suitable design is developed completion; And common product does not have appropriate structure to address the above problem, and this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found a kind of new submergence decline shadow equipment and processing procedure, just become the current industry utmost point to need improved target.
The defective that the shadow technology exists because above-mentioned existing submergence declines; The inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge; And cooperate the utilization of scientific principle, actively study innovation, in the hope of founding a kind of new submergence decline shadow equipment and processing procedure; Can improve the general existing submergence shadow equipment that declines, make it have more practicality.Through constantly research, design, and after studying sample and improvement repeatedly, found out the present invention of true tool practical value finally.
Summary of the invention
The objective of the invention is to; Overcome the existing submergence defective that shadow equipment exists that declines; The shadow equipment and the submergence that a kind of new structure is provided declines; Technical matters to be solved is to make it can control semiconductor crystal wafer and between the camera lens near wafer, and the flow direction that is dispersed throughout the wafer periphery surface, thereby is suitable for practicality more.
Another object of the present invention is to; A kind of immersion micro-photographing process is provided; Technical matters to be solved is to make it can control semiconductor crystal wafer and between the camera lens near wafer, and the flow direction that is dispersed throughout the wafer periphery surface, thereby is suitable for practicality more.
The object of the invention and solve its technical matters and adopt following technical scheme to realize.A kind of photolithography equipment according to the present invention proposes is used for the semiconductor element processing procedure, and it has comprised a wafer dressing table, and this wafer dressing table is for carrying the semiconductor wafer; One camera lens, the bottom surface of this camera lens are configured in very the top near the horizontal surface of this semiconductor crystal wafer, in order on this semiconductor crystal wafer, flatly to move; And a liquid dispensing assembly, this liquid dispensing assembly be assemblied on this camera lens and can around this rotation of lens wherein liquid dispensing assembly comprise: a ring, and this ring engages with this camera lens around this camera lens and rotatability ground; One nozzle assembly, this nozzle assembly comprises a plurality of nozzles; An and drain assembly; This drain assembly comprises a plurality of osculums; Wherein those nozzles and those osculums are located among this ring and are formed the staggered a plurality of holes of ring-type, and wherein this liquid dispensing assembly can be a benchmark with this surface, is accompanied by this camera lens and moves; In order between the surface and this camera lens of this semiconductor crystal wafer, guide the particulate of one edge that a liquid drives this semiconductor crystal wafer outwardly away from surpassing this semiconductor crystal wafer along a required direction.
The object of the invention and solve its technical matters and also adopt following technical measures to come further to realize.
Aforesaid photolithography equipment, wherein said liquid distribution member comprise that at least a nozzle assembly and a drain assembly are disposed on this surface, and this drain assembly is discharged this liquid from this surface.
Aforesaid photolithography equipment; Wherein said liquid dispensing assembly extends around this camera lens; Around this camera lens, and comprise that a nozzle assembly comprises that a plurality of nozzles and a drain assembly comprise a plurality of osculums, be disposed at this camera lens also relative to each other on every side.
Aforesaid photolithography equipment, wherein said liquid dispensing assembly is around this rotation of lens, and comprises an at least one nozzle assembly and a drain assembly, is disposed at the part extended spot in abutting connection with this camera lens and this camera lens.
The object of the invention and solve its technical matters and also adopt following technical scheme to realize.A kind of immersion micro-photographing process according to the present invention's proposition; It may further comprise the steps: the camera lens in semiconductor wafer and the little shadow equipment is provided; Wherein this camera lens has that a liquid dispensing assembly engages with this camera lens and can be around this rotation of lens; This liquid dispensing assembly comprises a ring, a nozzle assembly and a drain assembly at least; This nozzle assembly and this drain assembly have a plurality of nozzles and a plurality of osculum respectively, and those nozzles and those osculums are located among this ring and are formed the staggered a plurality of holes of ring-type; Around this camera lens, rotate this nozzle assembly and this drain assembly, and start selected nozzle and osculum individually,, make the liquid between this flow direction this semiconductor crystal wafer of guiding and this camera lens to control a flow direction; And when this camera lens and this liquid dispensing assembly from the central horizontal of this semiconductor crystal wafer when moving to the edge on this semiconductor crystal wafer one surface; Liquid between this semiconductor wafer surface of this nozzle guide and this camera lens is flowed from this semiconductor crystal wafer, surpass this semiconductor crystal wafer outwardly with the particulate that drives this semiconductor die rounded edge.
The object of the invention and solve its technical matters and also adopt following technical measures to come further to realize.
Aforesaid immersion micro-photographing process, it more comprises according to this semiconductor crystal wafer, moves the step of this camera lens and this liquid dispensing assembly simultaneously.
Aforesaid immersion micro-photographing process; Wherein said guiding step comprises the step of the first that this liquid to this semiconductor crystal wafer is provided; And after this moves step, more comprise along the step in a follow-up zone of flow direction guiding this liquid to this semiconductor crystal wafer.
Aforesaid immersion micro-photographing process, it comprises that more using an irradiate light to penetrate this camera lens makes public this semiconductor crystal wafer to scheme to carve this semiconductor crystal wafer, the step when between this semiconductor crystal wafer and this camera lens, disposing this liquid.
Aforesaid immersion micro-photographing process, wherein said guiding step comprise this camera lens of this liquid of guiding contact and one of this semiconductor crystal wafer surperficial step, with so that this liquid extends to this surface continuously from this camera lens.
The present invention compared with prior art has tangible advantage and beneficial effect.Can know by above technical scheme; A kind of immersion microlithography system that is applicable among the semiconductor fabrication process; It provides the lens assembly that moves with respect to crystal column surface, and has comprised that one fits together with lens assembly, the nozzle and the drain assembly that move along with lens assembly.Nozzle and drain assembly are around being configured in around the camera lens; And position each other is relative; Perhaps can provide one comprise a plurality of alternative nozzles and drainage equipment ring, be surrounded on around the camera lens with the mode of alternately arranging, wherein nozzle and drain assembly can rotate round camera lens.Wafer is carrying out figure when carving program, can some be immersed in the liquid that nozzle assembly provides at least, and the flow direction can be controlled via manipulating nozzles and drain assembly.Determined after the flow direction, be positioned at the flow diffluence outward always of semiconductor die rounded edge, and constantly particulate be washed into outside the wafer, alleviated the particulate contamination phenomenon of crystal round fringes.
By technique scheme; Decline shadow equipment and processing procedure can be controlled semiconductor crystal wafer and between the camera lens near wafer of submergence of the present invention; And the flow direction that is dispersed throughout the wafer periphery surface, determined after the flow direction, be positioned at the flow diffluence outward always of semiconductor die rounded edge; And constantly particulate is washed into outside the wafer, alleviated the particulate contamination phenomenon of crystal round fringes.
In sum, the submergence that the present invention is special decline shadow equipment and processing procedure, it has alleviated the particulate contamination phenomenon of crystal round fringes.It has above-mentioned many advantages and practical value; And in like product and method, do not see have similar structural design and method to publish or use and really genus innovation; No matter it all has bigger improvement on product structure, method or function, have large improvement technically, and produced handy and practical effect; And the more existing submergence shadow technology that declines has the multinomial effect of enhancement; Thereby being suitable for practicality more, and having the extensive value of industry, really is the new design of a novelty, progress, practicality.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention; Understand technological means of the present invention in order can more to know; And can implement according to the content of instructions, and for let of the present invention above-mentioned with other purposes, feature and advantage can be more obviously understandable, below special act preferred embodiment; And conjunction with figs., specify as follows.
Description of drawings
Figure 1A to Figure 1B has described camera lens and rotatable nozzle and the drain assembly of first embodiment according to the invention.
Fig. 2 has described the annular platform of alternative alternately nozzle of having of second embodiment according to the invention and osculum;
Fig. 3 has described first and second embodiment according to the invention, is dispersed throughout the flow subregion direction of semiconductor wafer surface.
Fig. 4 has described first embodiment according to the invention, the flow direction of being guided by camera lens and nozzle and drainage arrangement.
100: side-looking Figure 102: camera lens
104: base ring 106: nozzle assembly
108 drain assemblies 110: wafer
112: liquid 113: surface
114: overlook Figure 200: liquid dispensing assembly
202: ring 204: alternative nozzle
206: osculum 300: the flow pattern
302: index 304: block
306: semiconductor crystal wafer 308: edge
400: the location drawing 402: dummy index
404: center 406: real index
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention; Below in conjunction with accompanying drawing and preferred embodiment; To the submergence that proposes according to the present invention decline shadow equipment and its embodiment of processing procedure, structure, step, characteristic and effect thereof, specify as after.
The invention provides the immersion microlithography system and the method for the most of flow directions of a may command; This controlled range is finally, or maximum, between camera lens and the semiconductor crystal wafer; And start at the zone that spreads all over wafer periphery surface from camera lens, make the phenomenon of particulate contamination be minimized.Wherein, so-called " finally " camera lens means at figure and carves in the program of wafer, near and facing to the camera lens of crystal column surface.Between wafer and camera lens, can provide in order to produce the more liquid of high-res, because this kind liquid has the refractive index greater than 1, so can promote the numerical aperture of camera lens.In the middle of a preferred embodiment, this liquid all contacts with camera lens and wafer, and extends between camera lens and the wafer.
Seeing also shown in Figure 1A, is first embodiment according to the invention, is used for the photoresistance exposure equipment of semiconductor fabrication process, side-looking Figure 100 of the liquid immersion system of camera lens 102.Base ring 104 be surrounded on camera lens 102 around, can be around camera lens 102 rotation, and be mounted with the nozzle assembly 106 and the drain assembly 108 that can together be regarded as liquid dispensing apparatus.Wherein, nozzle assembly 106 can include a plurality of nozzles, and drain assembly 108 then can include a plurality of osculums that can liquid be extracted out from surface 113.In the present embodiment, the bottom surface of horizontal base ring 104 and camera lens 102 all is configured in very the top near horizontal surface (being the surface 113 of semiconductor crystal wafer 110).Interval region between these objects abrim refractive index greater than 1 liquid 112.Under some is used, can use deionized water (deionized water) to come, and under the application of other kinds, also can use the fluid that can not injure surface 113 to come as liquid 112 as liquid 112.At this moment, liquid 112 will be effectively the bottom surface of surface in contact 113 and camera lens 102 simultaneously, and make continuity ground between the two at it and extend.The rotating base ring 104 of tool makes the flow direction that is dispersed throughout on the wafer 110 become controllable.The direction control that is appreciated that flow in the middle of the natural characteristic of liquid only can be as far as possible controlled most flow direction wherein, and the uncontrollable flow direction to each drop of liquid.
Seeing also shown in Figure 1B, is the first embodiment of the invention that meets shown in 1A figure, is used for the photoresistance exposure equipment of semiconductor fabrication process, the liquid immersion system of camera lens 102 overlook Figure 114.Base ring 104 be looped around camera lens 102 around, can be around camera lens 102 rotation, and in abutting connection with the camera lens place around the nozzle assembly 106 and the drain assembly 108 that are loading relative to each other.The bottom surface of horizontal base ring 104 and camera lens 102 all is configured in very the top near semiconductor crystal wafer 110 horizontal surfaces.Liquid 112 can be filled in the interval region between these objects as stated.
See also shown in Figure 2ly, described the second embodiment of the present invention.The liquid dispensing assembly 200 that is comprising ring 202 wherein is docile and obedient preface and is alternately being carried alternative nozzle 204 and osculum 206 round camera lens 102 on ring 202.So arrange, can make flow determined what group specific nozzle to flow to how to organize the given row water hole from.In this mode, do not need the just may command flow directions that are dispersed throughout camera lens 102 surface and leave away of rotation of the hoop 202 from ring 202.In another embodiment, ring 202 also can so can provide another kind of control to be dispersed throughout the method for the flow of wafer 110 round camera lens 102 rotations.When flow is left when passing semiconductor crystal wafer 110 a part of, the light source that can help to penetrate camera lens 102 is to this a part of exposure effect, thereby produced figure and carve effect.Liquid can be effectively the bottom surface of surface in contact 113 and camera lens 102 simultaneously, and make continuity ground between the two at it and extend.In addition, nozzle 204 and osculum 206 are put by staggered in the present embodiment, and in other embodiment, the arrangement of other kinds can be arranged.
See also shown in Figure 3; First embodiment according to the invention or second embodiment have been described; Nozzle and osculum for rotatable base ring 104; Or the flow pattern 300 that is guided for the nozzle 204 of ring 202 and osculum 206, this flow pattern 300 is by a plurality of flow index 302 represented forming.Can see through suitably by the indicated flow direction of index that rotary nozzle and osculum guide, these can be according to aforesaid two embodiment, or the embodiment that the nozzle of other rings and freeing port have a specific activities mode reaches.
So far, can obviously find out in first and second embodiment of the present invention the effect of distributing nozzle group and osculum group.See also first embodiment shown in Figure 1A and Figure 1B; All devices that camera lens 102 is included; Like rotatable liquid allocation component, nozzle assembly 106 and the osculum assembly 108 of base ring 104, relevant with the size of arbitrary block 304 on the semiconductor crystal wafer 306.Camera lens 102 and the appendix nozzle/drainage arrangement on it can be with semiconductor crystal wafer 306 surperficial whole scanned; With in the photoresistance of pattern exposure on semiconductor crystal wafer 306, this program little shadow equipment of scanning repeat (scan-and-repeat) like ledex (stepper) capable of using is reached in order in proper order.In the middle of an embodiment, camera lens and nozzle/drainage arrangement are together done the parallel of essence facing to semiconductor crystal wafer 306 surfaces and are moved.Flow index 302 has indicated under the effect of selected nozzle and osculum, the flow direction that is produced with respect to semiconductor crystal wafer 306.Concerning the zone of wafer 300 peripheries, flow index 302 is all outwards indicated.Because the most possible source of particulate contamination is exactly the edge 308 at semiconductor crystal wafer 306, flow has benefit outwardly.Flow outwardly can be towards the edge 308 be removed particulates; Particulate is brought to the place above edge 308; Make particulate away from the active member that in semiconductor crystal wafer 306, is shaped; So that the cleaning action of continuation to be provided, but not as way in the past, have with particulate sweep from the edge 308 sweep semiconductor crystal wafer 306 surfaces risk.
See also shown in Figure 4ly, described the position example of camera lens when submergence exposure scanning semiconductor crystal wafer 306 in proper order.Camera lens 102 has carried nozzle assembly 106 and the drain assembly 108 among first embodiment, nozzle wherein and osculum connect around be arranged in camera lens 102 around, can be around camera lens 102 rotation, and along with camera lens 102 moves.Flow flows to the direction of osculum from nozzle generally can be identical with the direction shown in dummy index 402, opens from center 404 streams of semiconductor crystal wafer 306, flows to the edge 308 of semiconductor crystal wafer 306.In addition, in another embodiment, camera lens 102 and liquid dispensing assembly generally can move at 404 past edges 308 from the wafer center, strictly according to the facts shown in the index 406.Camera lens 102 and nozzle assembly can semiconductor crystal wafer 110 surface 113 for benchmark moves, and can carry out parallel in fact moving with surface 113.Any from semiconductor crystal wafer 306 surfaces or the contaminative particulate that scans out of semiconductor crystal wafer 306 edges 308, all can by towards and discharge edge 308.
Though device and method proposed by the invention provides a liquid-immersed exposure sources of preferable spray model; But the art of knowing this field all can be recognized; Penetrate in little shadow equipment of suitable light source of camera lens having suitable light source projection; The present invention capable of using provides the liquid immersion program that is executed in spray or soaks pattern, is formed at the semiconductor element on the wafer to scheme to carve.
The invention provides multiple various embodiment and example; In order to the different characteristics that realizes that the present invention had; In the middle of the particular example explanation of relevant elements and program all be for exposure the present invention that can be clear and definite; Therefore these explanations not can be considered the restriction that the present invention is done certainly only as example.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction; Though the present invention discloses as above with preferred embodiment; Yet be not in order to limiting the present invention, anyly be familiar with the professional and technical personnel, in not breaking away from technical scheme scope of the present invention; When the method for above-mentioned announcement capable of using and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations; But every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (9)
1. a photolithography equipment is used for the semiconductor element processing procedure, it is characterized in that it comprises:
One wafer dressing table, said wafer dressing table is for carrying the semiconductor wafer;
One camera lens, the bottom surface of said camera lens are configured in the top of the horizontal surface of very approaching said semiconductor crystal wafer, in order on said semiconductor crystal wafer, flatly to move; And
One liquid dispensing assembly, said liquid dispensing assembly are assemblied on the said camera lens and can be around said rotation of lens, and wherein said liquid dispensing assembly comprises:
One ring, and said ring engages with said camera lens around said camera lens and rotatability ground;
One nozzle assembly, said nozzle assembly comprises a plurality of nozzles; And
One drain assembly, said drain assembly comprises a plurality of osculums,
Wherein said a plurality of nozzle and said a plurality of osculum are located among the said ring and are formed the staggered a plurality of holes of ring-type,
And wherein said liquid dispensing assembly can be a benchmark with said horizontal surface; Being accompanied by said camera lens moves; In order between the said horizontal surface and said camera lens of said semiconductor crystal wafer, guide the particulate of one edge that a liquid drives said semiconductor crystal wafer outwardly away from surpassing said semiconductor crystal wafer along a required direction.
2. photolithography equipment according to claim 1 it is characterized in that wherein said nozzle assembly and said drain assembly are disposed on the said horizontal surface, and said drain assembly is discharged said liquid from said horizontal surface.
3. photolithography equipment according to claim 1 is characterized in that wherein said a plurality of nozzle and said a plurality of osculum are disposed at said camera lens also relative to each other on every side.
4. photolithography equipment according to claim 1 is characterized in that wherein said nozzle assembly and said drain assembly are disposed in abutting connection with the part extended spot of said camera lens and said camera lens.
5. immersion micro-photographing process is characterized in that it may further comprise the steps:
Camera lens in semiconductor wafer and the little shadow equipment is provided; Wherein said camera lens has that a liquid dispensing assembly engages with said camera lens and can be around said rotation of lens; Said liquid dispensing assembly comprises a ring, a nozzle assembly and a drain assembly at least; Said nozzle assembly and said drain assembly have a plurality of nozzles and a plurality of osculum respectively, and said a plurality of nozzle and said a plurality of osculum are located among the said ring and are formed the staggered a plurality of holes of ring-type;
Around said camera lens, rotate said nozzle assembly and said drain assembly, and start selected nozzle and osculum individually,, make said flow direction guide the liquid between said semiconductor crystal wafer and the said camera lens to control a flow direction; And
When said camera lens and said liquid dispensing assembly from the central horizontal of said semiconductor crystal wafer when moving to the edge on said semiconductor crystal wafer one surface; Liquid between said semiconductor wafer surface of said nozzle guide and the said camera lens is flowed from said semiconductor crystal wafer, surpass said semiconductor crystal wafer outwardly with the particulate that drives said semiconductor die rounded edge.
6. immersion micro-photographing process according to claim 5 is characterized in that it more comprises according to said semiconductor crystal wafer, moves the step of said camera lens and said liquid dispensing assembly simultaneously.
7. immersion micro-photographing process according to claim 6; It is characterized in that wherein said guiding step comprises the step of the first that said liquid to said semiconductor crystal wafer is provided; And after said mobile step, more comprise the step that guides a follow-up zone of said liquid to said semiconductor crystal wafer along a flow direction.
8. immersion micro-photographing process according to claim 5; It is characterized in that it comprises that more using an irradiate light to penetrate said camera lens makes public said semiconductor crystal wafer to scheme to carve said semiconductor crystal wafer, the step when between said semiconductor crystal wafer and said camera lens, disposing said liquid.
9. immersion micro-photographing process according to claim 5; It is characterized in that wherein said guiding step comprises that the said liquid of guiding contacts a surperficial step of said camera lens and said semiconductor crystal wafer, with so that said liquid extends to said surface continuously from said camera lens.
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| CN 200510115212 CN1963675B (en) | 2005-11-11 | 2005-11-11 | Infiltrating type micro-image apparatus and process thereof |
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| CN 200510115212 CN1963675B (en) | 2005-11-11 | 2005-11-11 | Infiltrating type micro-image apparatus and process thereof |
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| CN1963675B true CN1963675B (en) | 2012-12-05 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1550905A (en) * | 2003-05-13 | 2004-12-01 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| EP1494079A1 (en) * | 2003-06-27 | 2005-01-05 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1571697A1 (en) * | 2002-12-10 | 2005-09-07 | Nikon Corporation | Exposure system and device producing method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1571697A1 (en) * | 2002-12-10 | 2005-09-07 | Nikon Corporation | Exposure system and device producing method |
| CN1550905A (en) * | 2003-05-13 | 2004-12-01 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| EP1494079A1 (en) * | 2003-06-27 | 2005-01-05 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2004-320017A 2004.11.11 |
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