CN1805027A - High power 650nm semiconductor laser for digital multi-purpose optical disks and manufacturing method - Google Patents
High power 650nm semiconductor laser for digital multi-purpose optical disks and manufacturing method Download PDFInfo
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- CN1805027A CN1805027A CNA2005100042433A CN200510004243A CN1805027A CN 1805027 A CN1805027 A CN 1805027A CN A2005100042433 A CNA2005100042433 A CN A2005100042433A CN 200510004243 A CN200510004243 A CN 200510004243A CN 1805027 A CN1805027 A CN 1805027A
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Abstract
The invention relates to a digital multi-function disc used large power 650nm semiconductor laser, which comprises a substrate used to do laser material structure external growth, a buffer layer on the substrate, a N type cladding on the buffer layer to limit the leakage of the loading unit, an active region layer on the cladding, a first P type cladding on the active region layer to limit the leakage of the loading unit, a current barrier layer on the P type cladding to barriers the current spread to reduce the current leakage, a second P type cladding on the current barrier layer and the first P type cladding to limit the leakage of the loading unit, a basaltic layer on the second P type cladding, an electrode touching layer on the basaltic layer, a double groove structure on the electrode touching layer, the basaltic layer and the second P type cladding which adopts etching bath to etch the three grooves, and a silicon nitride oxide layer on the electrode touching layer which covers the double grooves.
Description
Technical field
The present invention relates to the structural design of high-power 650nm semiconductor laser, and corresponding devices technology production process.Exactly, according to the practical situations of 650nm semiconductor laser, for realize that it is high-power under fundamental transverse mode, low-power consumption condition (0～70mW) output services, a kind of digital versatile disc that we proposed are with high-power 650nm semiconductor laser:
1, slab waveguide structure and corresponding technology method for making in semiconductor laser structure---the secondary epitaxy double channel;
2, solving the method for light catastrophe damage---constant source Zn diffusion of contaminants induces quantum well mixing to make non-absorbing window.
Background technology
Can repeat erasable digital versatile disc (Digital Versatile Disk-Random AccessMemory, abbreviation DVD-RAM) be the product that the optical information technology develops rapidly with high-power 650nm semiconductor laser, a kind of important photoelectric device that is applied in the optical information memory technology.The twentieth century end, our society has entered the information revolution epoch, in the face of " the digital huge beast " of growing with each passing day, pressing forward in a crowd, this impels people constantly to pursue advanced more infotech: the information transmission technology that high speed is stable and the information storage technology of ultra-high capacity.The semiconductor red laser is exactly under this situation, is familiar with research by people and constantly is applied in the middle of the optical information memory technology.At first, the red light semiconductor laser technology of the 780nm wave band of the last more than ten years maturation of eighties of last century has been brought a kind of optical information memory technology---the splendidness of CD technology.Yet only the CD cd side of hundreds of megabyte is to more and more huger " digital huge beast " for stature, and it is thin and unable to become gradually.The red light semiconductor laser technological direction maturation of 650nm wave band subsequently, a kind of optical information memory technology of high power capacity---DVD (Digital Verasital Disc) technology has occurred.The memory space of DVD CD is 7-30 a times more than of CD CD.Along with the maturation of DVD technology with popularize, the DVD CD also just writes (DVD-R) and erasable (DVD-RAM) direction from read-only (DVD-ROM) to single to be developed.Because the requirement on its technology is used especially is written into the laser output power of having relatively high expectations when wiping at CD, makes people carry out the research to high-power 650nm red light semiconductor laser inevitably.
DVD-RAM in actual design is made, considers many application factors with high-power 650nm semiconductor laser, and its technical indicator all has specific requirement:
One, wavelength stabilization 650nm, fundamental transverse mode output
No matter be CD-DA (CD) or video disc (VCD, DVD), though also canned data based on the different various CDs (as magneto-optic disk, phase change disc) of principle, it is maximum that the information density that writes down for making reaches, the hot spot that focuses on through optical system should be as far as possible little, and the minimum light spot diameter that can reach is:
So by following formula as seen high density information write with readout in, the optical maser wavelength of required light source will be lacked as far as possible and will be stablized; For ease of the needs of optical system focusing, laser will have high as far as possible beam quality and as far as possible little light beam astigmatism simultaneously.Under the pressure of the former requirement, people select the suitable compound semiconductor material usually, and make suitable quantum well, make wavelength reduce to 650nm (AlGaInP/GaInP compound semiconductor materials) from 780nm (AlGaAs/GaAs compound semiconductor materials).And for the latter, optical waveguide reasonable in design obtains strict fundamental transverse mode output (being the single mode output services), will effectively improve output beam quality and reduce astigmatism.At present, people's multiselect ridge waveguide, the ridged selection of dimension is suitable can to obtain good single mode output laser beam.
Two, bigger laser power
For the DVD-RAM CD player, laser output power is an important parameter.When writing information, the medium that the effect of laser beam is to heat on the magneto-optic card reaches Curie point (～200 ℃), so that Kerr effect takes place down in the outside magnetic field effect; Or the material on the phase transformation card by amorphous phase to crystal transition.The magneto-optic card is heated to the continuous power laser that Curie point needs 8mW approximately under the rotating speed of 2400r/min.Optical system transfer efficiency from laser instrument to cd side is got classical value 50%, and then laser instrument needs the continuous power output of 16mW at least.Simultaneously for satisfying the Writing power of desired all CD media of international markization tissue (ISO), and consider factor desired power surplus such as the nonideal transfer efficiency of optical head; CD media is to the trend of the sensitiveer and CD of the absorption of infrared light to higher rotating speed development in addition, and it is suitable that the output power that laser output power is designed to 50～70mW is only.
Yet this edge-emitting laser that is applied to DVD-RAM will satisfy the output of basic mode single mode, and this just makes the output laser power of 50mW only concentrate on about 0.8 μ m
2Face area on.Thereby the optical energy density at this area place is high, and (CatastrophicOptical Damage COD), makes laser instrument thoroughly damage to be easy to produce light catastrophe damage.So-called COD is that irreversible physical injury has taken place laser cavity surface.The method that solves COD has:
1, large-optical-cavity structure, conical cavity structure, but the difficult requirement of satisfying basic mode output of these structures;
2, band injection region window structure, but its making is difficult, cost is also higher, and than the destructible laser structure;
3, chemical passivation, but the needed medicine toxicity of passivation is very big, and practicality is also little;
4, method at present commonly used be the non-absorbing window structure (Nonabsording Window, NAW), its manufacture craft is convenient and simple; Can improve the COD threshold value preferably in conjunction with the laser cavity surface coating technique.
Three, low-power consumption
The high power laser that is applied to DVD-RAM will be faced the consumer, and low-power consumption is unavoidable must considering a problem.The threshold current of laser instrument is at 40～80mA, and working current is also the smaller the better.
Summary of the invention
The objective of the invention is to, provide a kind of digital versatile disc with high-power 650nm semiconductor laser and preparation method thereof, have low threshold current, working current, (50～70mW), fundamental transverse mode output guarantees high beam quality to stable output power.
A kind of digital versatile disc of the present invention is characterized in that with high-power 650nm semiconductor laser, comprising:
One substrate, this substrate are used for carrying out the epitaxial growth of laser material structure thereon, and substrate is the N-gallium arsenic of (100) face, and (100) are towards＜111〉the A face has a drift angle;
One cushion, this cushion is produced on the substrate, to alleviate the lattice mismatch of substrate and following layer of material;
One N type covering, this N type covering is produced on the cushion, and limiting carrier leaks;
One active region layer, this active region layer is produced on the covering;
One the one P type covering, a P type covering is produced on the active region layer, and limiting carrier leaks;
One current barrier layer, this current barrier layer are produced on the P type covering, and the block current flow diffusion is leaked to reduce electric current, improves the electric light transformation efficiency;
One the 2nd P type covering, the 2nd P type covering are produced on a current barrier layer and the P type covering, and limiting carrier leaks;
One transition bed, this transition bed are produced on the 2nd P type covering;
One contact electrode layer, this contact electrode layer is produced on the transition bed;
One double channel, this double channel structure are formed in contact electrode layer, transition bed, the 2nd P type covering, adopt corrosive liquid to etch dark and this raceway groove of three layers;
One silicon oxynitride layer, this silicon oxynitride layer is produced on the contact electrode layer, and covers double channel.
Wherein etch the interior bar raceway groove of wide 4 μ m at current barrier layer.
Wide 5 μ m of the raceway groove of double channel wherein, two raceway grooves reach the 2nd P type covering on the current barrier layer deeply at a distance of 10 μ m.
Wherein the material with current barrier layer is an aluminium indium phosphorus, and the energy gap of aluminium indium phosphate material is bigger, is again simultaneously that the N type mixes, and forms reverse P-N knot, and diffusion has big barrier effect to electric current.
A kind of digital versatile disc of the present invention is characterized in that with the method for making of high-power 650nm semiconductor laser, comprises the steps:
Step 1: get a substrate, epitaxial growth buffer, N type covering, active area, a P type covering, current barrier layer, etch stop layer, gallium arsenic protective seam successively on this substrate;
Step 2: on gallium arsenic protective seam, vertically erode away a bar shaped;
Step 3: bar raceway groove on current barrier layer, making by lithography;
Step 4: erode the gallium arsenic protective seam on the current barrier layer;
Step 5: at the 2nd P type covering of current barrier layer epitaxial growth successively, transition bed, contact electrode layer;
Step 6:, the two ends of spreading mask layer are etched two horizontal bar shapeds at contact electrode layer growth diffusion mask layer;
Step 7: developing zinc oxide layer on diffusion mask layer and contact electrode layer;
Step 8: zinc oxide film as zinc diffuse source, is spread;
Step 9: will spread mask layer and zinc oxide film erodes;
Step 10: adopt wet method of carving to make the double channel of block current flow diffusion;
Step 11: on double channel and contact electrode layer, make electric current diffusion mask layer, eroding away electrode pattern between two double channels on the electric current diffusion mask layer.
Wherein etch the interior bar raceway groove of wide 4 μ m at current barrier layer.
Wide 5 μ m of the raceway groove of double channel wherein, two raceway grooves reach the 2nd P type covering on the current barrier layer deeply at a distance of 10 μ m.
Wherein the material with current barrier layer is an aluminium indium phosphorus, and the energy gap of aluminium indium phosphate material is bigger, is again simultaneously that the N type mixes, and forms reverse P-N knot, and diffusion has big barrier effect to electric current.
Description of drawings
For further specifying concrete technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after, wherein:
Fig. 1 is epitaxial structure synoptic diagram of laser instrument;
Fig. 2 is after finishing interior slab waveguide structure fabrication, laser instrument secondary extension structure synoptic diagram;
Fig. 3 is the zinc source making synoptic diagram that constant source open pipe selectivity expands zinc;
Fig. 4 is the double channel synoptic diagram of block current flow diffusion in the laser structure;
Fig. 5 is the complete laser device structural representation of electrodeless layer;
Fig. 6 is laser instrument layers of material and waveguiding structure synoptic diagram.
Embodiment
Consult Fig. 5 and Fig. 6, a kind of digital versatile disc of the present invention comprises with high-power 650nm semiconductor laser:
One substrate 9, this substrate 9 are used for carrying out the epitaxial growth of laser material structure thereon, and substrate is the N-gallium arsenic of (100) face, and (100) are towards＜111〉the A face has a drift angle;
One cushion 8, this cushion are produced on the substrate 9, to alleviate the lattice mismatch of substrate 9 and following layer of material;
One N type covering 7, this N type covering 7 is produced on the cushion 8, and limiting carrier leaks;
One active region layer 6, this active region layer are produced on the covering 7;
One the one P type covering, 5, the one P type coverings 5 are produced on the active region layer 6, and limiting carrier leaks;
One current barrier layer 4, this current barrier layer 4 are produced on the P type covering 5, and the block current flow diffusion is leaked to reduce electric current, improves the electric light transformation efficiency; Wherein on current barrier layer 4, etch the interior bar raceway groove 41 of wide 4 μ m; The material of this current barrier layer 4 is an aluminium indium phosphorus, and the energy gap of aluminium indium phosphate material is bigger, is again simultaneously that the N type mixes, and forms reverse P-N knot, and diffusion has big barrier effect to electric current;
One the 2nd P type covering, 3, the two P type coverings 3 are produced on a current barrier layer 4 and the P type covering 5, and limiting carrier leaks;
One transition bed 2, this transition bed are produced on the 2nd P type covering 3;
One contact electrode layer 1, this contact electrode layer 1 is produced on the transition bed 2;
One double channel a, this double channel a structure is formed in contact electrode layer 1, transition bed 2, the 2nd P type covering 3, adopts corrosive liquid to etch dark and this raceway groove of three layers;
One silicon oxynitride layer 05, this silicon oxynitride layer 05 is produced on the contact electrode layer 1, and covers double channel a; Wide 5 μ m of the raceway groove of double channel a wherein, two raceway grooves reach the 2nd P type covering 3 on the current barrier layer 4 deeply at a distance of 10 μ m.
Wide 5 μ m of the raceway groove of double channel a wherein, two raceway grooves reach the 2nd P type covering 3 on the current barrier layer 4 deeply at a distance of 10 μ m.
Please in conjunction with consulting Fig. 1 to 6, a kind of digital versatile disc comprises the steps: with the method for making of high-power 650nm semiconductor laser
Step 1: get a substrate 9, epitaxial growth buffer 8, N type covering 7, active area 6, a P type covering 5, current barrier layer 4, etch stop layer 02, gallium arsenic protective seam 01 (Fig. 1) successively on this substrate 9;
Step 2: on gallium arsenic protective seam 01, vertically erode away a bar shaped;
Step 3: bar raceway groove 41 on current barrier layer 4, making by lithography; Wherein etch the interior bar raceway groove 41 of wide 4 μ m at current barrier layer 4, the material of this current barrier layer 4 is an aluminium indium phosphorus, and the energy gap of aluminium indium phosphate material is bigger, is again simultaneously that the N type mixes, form reverse P-N knot, diffusion has big barrier effect (Fig. 2) to electric current.
Step 4: erode the gallium arsenic protective seam 01 on the current barrier layer 4;
Step 5: at the 2nd P type covering 3 of current barrier layer 4 epitaxial growth successively, transition bed 2, contact electrode layer 1 (Fig. 3);
Step 6:, the two ends of spreading mask layer 03 are etched two horizontal bar shapeds 031 (Fig. 3) at contact electrode layer 1 growth diffusion mask layer 03;
Step 7: developing zinc oxide layer 04 (Fig. 4) on diffusion mask layer 03 and contact electrode layer 1:
Step 8: zinc oxide film 04 as zinc diffuse source, is spread;
Step 9: will spread mask layer 03 and zinc oxide film 04 erodes;
Step 10: adopt wet method of carving to make the double channel a of block current flow diffusion, the wide 5 μ m of the raceway groove of this double channel a, two raceway grooves reach the 2nd P type covering 3 (Fig. 5) on the current barrier layer 4 deeply at a distance of 10 μ m;
Step 11: on double channel a and contact electrode layer 1, make electric current diffusion mask layer 05, eroding away electrode pattern (Fig. 5) between the two double channel a on the electric current diffusion mask layer 05.
Below with reference to the concrete method for making of accompanying drawing detailed description according to the high-power 650nm semiconductor laser of the present invention structure, and the making of corresponding non-absorbing window.
1, the device architecture of laser instrument, consult Fig. 5, shown in Figure 6:
A kind of DVD-RAM of the present invention makes from its device architecture of high-power 650nm semiconductor laser, can be divided into two parts in detail:
The making of the interior slab waveguide structural semiconductor laser instrument of a, common power output
The making of b, non-absorbing window structure
2, DVD-RAM of the present invention is simple with high-power 650nm semiconductor laser manufacture craft, and dirigibility is big, and is easy to produce in enormous quantities.Processing step is as follows:
(1), an extension, see also Fig. 1.
Through an extension; on the GaAs substrate, once grow cushion N-GaInP layer 8; N type covering N-AlGaInP7; active area 6; P type covering P-AlGaInP5; current barrier layer N-AlInP4, protective seam GaAs01, the very thin corrosion barrier layer GaInP02 of growth one deck between protective seam GaAs01 and current barrier layer N-AlInP4, current barrier layer N-AlInP4 and P type covering P-AlGaInP5 simultaneously.
(2), the making of interior slab waveguide structure, secondary epitaxy, see also Fig. 2.
An epitaxial wafer is carried out photoetching corrosion to be handled.At first the cycle of making by lithography is 300 μ m, and bar is wide to be the fillet shape pattern of 4 μ m.With the photoresist is the selective etching mask layer, is that etchant solution erodes away a raceway groove to GaAs layer 01 with sulfuric acid, reaches adjacent 01 layer GaInP layer deeply; Removing photoresist then, do the selective etching mask layer with GaAs layer 01, is that etchant solution floats fast and wears the GaInP layer with very rare bromic acid, exposes following N-AlInP layer 5; Be the GaAs layer 01 that etchant solution erodes the top layer remainder with sulfuric acid once more, expose the GaInP layer; Doing the selective etching mask layer with the GaInP layer at last, is etchant solution bar raceway groove in the AlInP layer erodes away with weak sulfuric acid, realizes the making of slab waveguide in the laser instrument.An epitaxial wafer of handling is put into the MOCVD reacting furnace carry out secondary epitaxy, once grow P type covering P-AlGaInP3, transition bed P-GaInP2, contact electrode layer P-GaAs1.
(3), the making of non-absorbing window structure, see also Fig. 3.
The SiO of growth one deck densification on epitaxial wafer
xN
yLayer, making for 50 μ m money cycles by lithography perpendicular to interior bar channel direction then is the bar paten of 900 μ m, is the selective etching mask layer with the photoresist, removes the SiO in the bar shaped
xN
yLayer, the SiO after photoetching subsequently
xN
yThe certain thickness ZnO layer of growth on the figure.Under certain high temperature, the ZnO layer is as the diffuse source of Zn impurity, SiO
xN
yLayer makes Zn impurity selectively expand and goes into laser structure, to realize the making of non-absorbing window as selecting the diffusion mask layer.
In the making of non-absorbing window, the thickness of Zn diffuse source ZnO layer, diffusion temperature, diffusion time all will produce material impact to non-absorbing window usefulness, and the possibility of damage laser performance is all arranged diffusion temperature, diffusion time simultaneously improperly.Optimizing above Zn diffusion bar is this step key issue, and the present invention has realized optimal conditions.
(4), make the cleavage mark, see also Fig. 3.
With hydrochloric acid is that etchant solution erodes the ZnO layer, is that etchant solution corrodes GaAs layer 1 fast with sulfuric acid, makes it a shallow channel occur, as the mark of later cleavage; Erode SiO with the hydrofluorite etchant solution
xN
yLayer is clean the slice, thin piece surface treatment.
(5), make the double channel of block current flow diffusion, see also Fig. 4.
Etch two raceway grooves in interior slab waveguide structure both sides,, obtained channel shape preferably because the layers of material difference must be selected different corrosive liquids.The corrosion situation: be that etchant solution corroded P-GaAs layer, P-GaInP layer with bromic acid earlier, to the P-AlGaInP layer, etching time 5 seconds, 25 ℃ of corrosion temperatures; Using weak sulfuric acid then instead is that etchant solution slowly erodes to corrosion barrier layer GaInP layer, forms raceway groove.
(6), make electrode pattern, consult Fig. 5.
At the SiO that finishes growth one deck densification on the epitaxial wafer of double channel
xN
yLayer, as shown in Figure 5, the SiO in the white edge
xN
yLayer is eroded by the hydrofluorite etchant solution through photoetching, exposes contact electrode layer P-GaAs layer 1.
(7), other technologies
Device through P face and the making of N face electrode, cavity surface film coating, adorn technology such as heat sink, encapsulation, a complete laser device has just been finished.
Based on the application conditions among the DVD-RAM, the present invention proposes a kind of secondary epitaxy double channel laser with internal strips structure.As shown in Figure 5, this is a complete laser device structure.The present invention etches a raceway groove with the N-AlInP layer, and to realize the restriction to electric current, the waveguide of Xing Chenging is referred to as interior slab waveguide in this case.So-called waveguide briefly is exactly the passage of light wave propagation.Laser instrument with this waveguiding structure only needs secondary epitaxy to realize, makes simple.After complete laser structure is finished, respectively etch a raceway groove in interior slab waveguide both sides, see among Fig. 5 shown in a, and use SiO
xN
y(electrically insulating material) fills it, thereby further limited the diffusion of electric current.The distance 10 μ m of two raceway grooves, this is by electric current diffusion depth and width decision.
The light catastrophe damage (COD) that a principal element that influences the high power laser characteristic is a laser instrument.The present invention proposes to make the non-absorbing window structure to solve COD in face vicinity, chamber.The method for making of non-absorbing window structure has ion injection, diffusion of contaminants, the diffusion of inclusion-free room and induced with laser method.Consider the application of above method in actual production, and cost of manufacture, technology difficulty, the diffusion of contaminants method is a kind of perfect method.The present invention proposes a kind of method of constant source open pipe diffusion and makes the non-absorbing window structure.Consult shown in Figure 3ly, get ZnO layer 04 as diffuse source in the superficial growth of laser instrument epitaxial wafer, diffusion impurity is Zn.This method is disposable the finishing in the reacting furnace that be diffused in of the making of diffuse source and impurity, the simple easy operating of method, and be easy to large stretch of the making.
Non-absorbing window structure in the past is just to begin to make through delaying outside once at laser structure, this gives the secondary epitaxy of laser instrument so that the making of entire device structure has brought a lot of uncertain factors, for example secondary epitaxy is surperficial unclean, because cause surface damage, laser structure to destroy when impurity source making and diffusion of contaminants, this just greatly reduces the yield rate of laser instrument.Laser instrument of the present invention is in manufacturing process, the making of device architecture and the making of non-absorbing window are separate, the non-absorbing window structure is to finish latter made fully at laser structure, this just greatly reduces and the making of the non-absorbing window influence to laser structure, has improved the yield rate of device.
Claims (8)
1, a kind of digital versatile disc is characterized in that with high-power 650nm semiconductor laser, comprising:
One substrate, this substrate are used for carrying out the epitaxial growth of laser material structure thereon, and substrate is the N-gallium arsenic of (100) face, and (100) are towards＜111〉the A face has a drift angle;
One cushion, this cushion is produced on the substrate, to alleviate the lattice mismatch of substrate and following layer of material;
One N type covering, this N type covering is produced on the cushion, and limiting carrier leaks;
One active region layer, this active region layer is produced on the covering;
One the one P type covering, a P type covering is produced on the active region layer, and limiting carrier leaks;
One current barrier layer, this current barrier layer are produced on the P type covering, and the block current flow diffusion is leaked to reduce electric current, improves the electric light transformation efficiency;
One the 2nd P type covering, the 2nd P type covering are produced on a current barrier layer and the P type covering, and limiting carrier leaks;
One transition bed, this transition bed are produced on the 2nd P type covering;
One contact electrode layer, this contact electrode layer is produced on the transition bed;
One double channel, this double channel structure are formed in contact electrode layer, transition bed, the 2nd P type covering, adopt corrosive liquid to etch dark and this raceway groove of three layers;
One silicon oxynitride layer, this silicon oxynitride layer is produced on the contact electrode layer, and covers double channel.
2, digital versatile disc according to claim 1 is characterized in that with high-power 650nm semiconductor laser, wherein etches the interior bar raceway groove of wide 4 μ m at current barrier layer.
3, digital versatile disc according to claim 1 is characterized in that with high-power 650nm semiconductor laser, wide 5 μ m of the raceway groove of double channel wherein, and two raceway grooves reach the 2nd P type covering on the current barrier layer deeply at a distance of 10 μ m.
4, digital versatile disc according to claim 1 is with high-power 650nm semiconductor laser, it is characterized in that, wherein the material with current barrier layer is an aluminium indium phosphorus, the energy gap of aluminium indium phosphate material is bigger, simultaneously be again that the N type mixes, form reverse P-N knot, diffusion has big barrier effect to electric current.
5, a kind of digital versatile disc is characterized in that with the method for making of high-power 650nm semiconductor laser, comprises the steps:
Step 1: get a substrate, epitaxial growth buffer, N type covering, active area, a P type covering, current barrier layer, etch stop layer, gallium arsenic protective seam successively on this substrate;
Step 2: on gallium arsenic protective seam, vertically erode away a bar shaped;
Step 3: bar raceway groove on current barrier layer, making by lithography;
Step 4: erode the gallium arsenic protective seam on the current barrier layer;
Step 5: at the 2nd P type covering of current barrier layer epitaxial growth successively, transition bed, contact electrode layer;
Step 6:, the two ends of spreading mask layer are etched two horizontal bar shapeds at contact electrode layer growth diffusion mask layer;
Step 7: developing zinc oxide layer on diffusion mask layer and contact electrode layer;
Step 8: zinc oxide film as zinc diffuse source, is spread;
Step 9: will spread mask layer and zinc oxide film erodes;
Step 10: adopt wet method of carving to make the double channel of block current flow diffusion;
Step 11: on double channel and contact electrode layer, make electric current diffusion mask layer, eroding away electrode pattern between two double channels on the electric current diffusion mask layer.
6, digital versatile disc according to claim 5 is characterized in that with the method for making of high-power 650nm semiconductor laser, wherein etches the interior bar raceway groove of wide 4 μ m at current barrier layer.
7, digital versatile disc according to claim 1 is characterized in that with the method for making of high-power 650nm semiconductor laser, wide 5 μ m of the raceway groove of double channel wherein, and two raceway grooves reach the 2nd P type covering on the current barrier layer deeply at a distance of 10 μ m.
8, digital versatile disc according to claim 1 is with the method for making of high-power 650nm semiconductor laser, it is characterized in that, wherein the material with current barrier layer is an aluminium indium phosphorus, the energy gap of aluminium indium phosphate material is bigger, simultaneously be again that the N type mixes, form reverse P-N knot, diffusion has big barrier effect to electric current.
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| CNA2005100042433A CN1805027A (en) | 2005-01-14 | 2005-01-14 | High power 650nm semiconductor laser for digital multi-purpose optical disks and manufacturing method |
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| CNA2005100042433A CN1805027A (en) | 2005-01-14 | 2005-01-14 | High power 650nm semiconductor laser for digital multi-purpose optical disks and manufacturing method |
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| CN102244367A (en) * | 2011-05-27 | 2011-11-16 | 北京大学 | Selected area polymer bonded-silicon-based mixing laser and manufacturing method thereof |
| CN102593717A (en) * | 2012-03-21 | 2012-07-18 | 中国工程物理研究院应用电子学研究所 | Semiconductor laser with ultrathin insulating layer and preparation method for semiconductor laser |
| CN106785910A (en) * | 2016-10-31 | 2017-05-31 | 武汉光迅科技股份有限公司 | A kind of buried structure laser and its manufacture method |
| CN107959225A (en) * | 2016-10-18 | 2018-04-24 | 青岛海信宽带多媒体技术有限公司 | The manufacture method of laser |
| CN109921277A (en) * | 2019-04-10 | 2019-06-21 | 苏州长光华芯光电技术有限公司 | Eliminate the method and semiconductor laser of semiconductor laser COMD |
| CN111092366A (en) * | 2018-10-23 | 2020-05-01 | 山东华光光电子股份有限公司 | Semiconductor laser with double-sided current limiting structure and preparation method |
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2005
- 2005-01-14 CN CNA2005100042433A patent/CN1805027A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102244367A (en) * | 2011-05-27 | 2011-11-16 | 北京大学 | Selected area polymer bonded-silicon-based mixing laser and manufacturing method thereof |
| CN102593717A (en) * | 2012-03-21 | 2012-07-18 | 中国工程物理研究院应用电子学研究所 | Semiconductor laser with ultrathin insulating layer and preparation method for semiconductor laser |
| CN107959225A (en) * | 2016-10-18 | 2018-04-24 | 青岛海信宽带多媒体技术有限公司 | The manufacture method of laser |
| CN106785910A (en) * | 2016-10-31 | 2017-05-31 | 武汉光迅科技股份有限公司 | A kind of buried structure laser and its manufacture method |
| CN111092366A (en) * | 2018-10-23 | 2020-05-01 | 山东华光光电子股份有限公司 | Semiconductor laser with double-sided current limiting structure and preparation method |
| CN109921277A (en) * | 2019-04-10 | 2019-06-21 | 苏州长光华芯光电技术有限公司 | Eliminate the method and semiconductor laser of semiconductor laser COMD |
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