CN1897079A

CN1897079A - Electronic device, method of driving the same, electro-optical device, and electronic apparatus

Info

Publication number: CN1897079A
Application number: CNA2006101056654A
Authority: CN
Inventors: 宫泽贵士
Original assignee: Seiko Epson Corp
Current assignee: Seiko Epson Corp
Priority date: 2005-07-15
Filing date: 2006-07-17
Publication date: 2007-01-17
Also published as: JP2007025192A

Abstract

Each unit circuit U includes a driving transistor Tdr having a conductive state changed in accordance with a gate potential Vg and an electro-optical element 11 having a gradation corresponding to the conductive state. In an initialization period P1, a potential supply line 17 and a gate of the driving transistor Tdr are electrically connected after a first potential Vss is supplied to the potential supply line 17, whereby the gate potential Vg is initialized to the first potential Vss. In a write period P2 after passage of the initialization period P1, a data line 14 and a source and the gate of the driving transistor Tdr are electrically connected. In a drive period P3 after passage of the write period P2, the potential supply line 17 and the source of the driving transistor Tdr are electrically connected after a second potential Vdd different from the first potential Vss is supplied to the potential supply line 17. Therefore, initialization a gate of a driving transistor without complicating a configuration of each unit circuit can be realized.

Description

Electronic installation, its driving method, electro-optical device and electronic device

Technical field

The present invention relates to control the technology that Organic Light Emitting Diode (below be called " OLED (Organic LightEmitting Diode) "), liquid crystal cell, electrophoresis element, electricity cause the movement of various driven elements such as color display element (electrochromic), electronic emission element, resistive element.

Background technology

Utilize the electro-optical device various electronic installations such as (light-emitting devices) of OLED element to have and be arranged as planar a plurality of unit circuits.For example, the constituent parts circuit comprises: grid is set at the transistor (below be called " driving transistors ") of the current potential corresponding with data-signal; By the driven element that flows to the current drives of driving transistors according to grid potential (for example OLED element) (for example with reference to non-patent literature 1).As shown in figure 22, also propose in the structure (for example with reference to non-patent literature 1) that has transistor (below be called " drive control transistor ") Tr0 between driving transistors Tdr and the driven element 11.According to this structure, can be by the control of drive control transistor Tr0, during the 11 actual drivings of correct provisioning driven element (for example to during driven element 11 supplying electric currents).

[non-patent literature 1] " 51.4:Invited Paper:Modeling and Design of PolysiliconDrive Circuits for OLED Displays ", Simon W.-B.Tam, Tastsuya Shimoda, SID04 Digest, pp.1406-pp.1409

Summary of the invention

, for high precision or the rapid transistorized grid potential of controlling and driving, before the supply of data-signal, wish the grid of driving transistors is initialized as the regulation current potential that has nothing to do with data-signal (below be called " initialization current potential ").In order to realize this initialization, be necessary to stride the wiring that a plurality of unit circuits are formed for the constituent parts circuit is supplied with the initialization current potential, and the conducting of the grid that switches this wiring and driving transistors and non-conduction on-off element are set in the constituent parts circuit., in this structure, because there is the structure complicated of constituent parts circuit in appending of wiring and on-off element, and the problem of aperture opening ratio decline.At least one of concrete mode mode of the present invention is in view of such problem, and its purpose is, does not make the structure complicated of constituent parts circuit, just realizes the initialization of the grid of driving transistors.

In addition, in described structure, except driving transistors Tdr, also in the constituent parts circuit, form drive control transistor Tr0, also be necessary in the constituent parts circuit, to be formed for the wiring of controlling and driving oxide-semiconductor control transistors Tr0, have the problem of the complicated and aperture opening ratio decline that causes the unit circuit structure.A mode scheme of the present invention is effective for addressing this problem.Promptly according to this mode scheme, on one side can suppress the complicated of constituent parts circuit structure, Yi Bian control during the driving of driven element.

In order to solve this problem, electronic installation of the present invention comprises: many first wirings (for example first control line 121 of the sweep trace 12, particularly Fig. 2 of Fig. 1); With many first many second wirings (for example data line 14 of Fig. 1) of connecting up and intersecting; Many current potential supply lines; The a plurality of unit circuits that intersect corresponding configuration that connect up with many first wirings and many second; Select the selection circuit (for example scan line drive circuit 22 of Fig. 1) of many first wirings respectively; During respectively writing, many second wirings are supplied with the data supply circuit (for example data line drive circuit 24 of Fig. 1) of data-signal; And the voltage control circuit that many current potential supply lines is set at a plurality of current potentials; Each of a plurality of unit circuits comprises: have control terminal (grid) and the first terminal (side of source electrode and drain electrode) and second terminal (the opposing party of source electrode and drain electrode), and according to the current potential of control terminal, the driving transistors that the conducting state of the first terminal and second terminal changes; The driven element that drives according to the conducting state of driving transistors; The first terminal and second first on-off element (for example transistor Tr 1 of Fig. 2) that connects up of electrical connection driving transistors in during selecting the writing of first wiring corresponding with this unit circuit; And the control terminal that is electrically connected current potential supply line and driving transistors in during the initialization before the beginning during this writes, during the driving later of the warp during writing in the potential setting parts (for example transistor Tr 2 of Fig. 2 and transistor Tr 3) of second terminal of electrical connection current potential supply line and driving transistors.More specifically, voltage control circuit is supplied with first current potential (the first current potential Vss of embodiment 1) to a current potential supply line in during initialization, a current potential supply line is supplied with second current potential (second current potential Vdd of embodiment 1) different with first current potential in during driving.

According to this structure, be used for during driving the current potential supply line dual-purpose of second terminal feeding, second current potential of driving transistors for the control terminal of driving transistors being supplied with in during initialization the wiring of first current potential, so be used for the structure of the initialized key element of current potential of the control terminal of driving transistors is compared with other preparation, can simplify the structure of constituent parts circuit.

It should be noted that, in the present invention, the current potential supply line is supplied with first current potential at least during initialization, and at least during driving the current potential supply line is supplied with second current potential, in during in addition, the current potential supply line can be set at any one in first current potential and second current potential.In addition, during the initialization, write during and drive during need not be seamlessly continuous on time shaft, can have during each and be spaced.

In the mode mode of hope of the present invention, each of a plurality of unit circuits comprises first electrode that has on the control terminal that is connected driving transistors, maintain the capacity cell of second electrode of set potential at least during driving.According to this mode mode, the current potential of the control terminal of driving transistors is kept by capacity cell, so in adequate time length, stride required time span, can keep the driving condition (for example optical states of electrooptic element) of driven element.

Second electrode of more wishing capacity cell is connected in first different with described one first wiring in many first wirings wirings.According to this mode mode, the first wiring dual-purpose makes second electrode maintain the wiring of set potential at least during driving, so the structure that the wiring different with first wiring with handle is connected on second electrode is compared, can cut down wiring quantity., the structure that wiring different with first wiring is not connected on second electrode is got rid of outside scope of the present invention.

In the mode mode of hope, second electrode of capacity cell is connected in many first wirings in other first wirings of selecting before described one first wiring.According to this mode mode, have can fully guarantee second electrode maintain set potential during (selected promptly first be routed in next time till selected during) advantage.

In concrete mode mode of the present invention, the potential setting parts comprise: second terminal of described current potential supply line of electrical connection and driving transistors in during initialization and in during driving, and the second switch element (for example transistor Tr 2 of Fig. 2) of second terminal of the described current potential supply line of electrical isolation and driving transistors in during writing.According to this mode mode, the electrical connection (conducting or non-conduction) of second terminal that can be by easy structure control current potential supply line and driving transistors.

If describe in detail, the potential setting parts of constituent parts circuit comprise: be electrically connected the first terminal and the control terminal of driving transistors in during initialization, and the first terminal of electrical isolation driving transistors and the 3rd on-off element (for example transistor Tr 3 of Fig. 2) of control terminal in during driving.According to this mode mode, if second switch element and the 3rd on-off element become conducting state, the control terminal of current potential supply line and driving transistors just is electrically connected, and if the second switch element becomes conducting state, just be electrically connected second terminal of current potential supply line and driving transistors.If first on-off element and the 3rd on-off element become conducting state in during writing, the control terminal of driving transistors just is set at the current potential corresponding with the threshold voltage of data-signal and driving transistors.Therefore, the skew of the threshold voltage of energy compensation for drive transistor drives driven element with high precision under required state.

In other mode modes, each of a plurality of unit circuits comprises the 4th on-off element (for example transistor Tr 4 of Fig. 2) of the electrical connection of transistorized the first terminal of controlling and driving and driven element.According to this mode mode, can be according to the state of the 4th on-off element, control the driving of driven element reliably and stop.

In this mode mode, first on-off element is 2 different transistors of mutual conduction type with the 4th on-off element, described 2 transistorized grids and described one first public connection of wiring.According to this mode mode, first on-off element and the 4th on-off element are worked with complementing each other, thus be connected to different wirings on, compare with the structure of the signal controlling of different system, can cut down wiring quantity.

In the mode mode of hope of the present invention, many current potential supply lines intersect with many second wirings.According to this mode mode, be connected during the initialization of one the first constituent parts circuit (during promptly writing simultaneously arrive constituent parts circuit) in the wiring and in during driving, can be set at required current potential (first current potential or second current potential) to the current potential supply line reliably.

More than the electronic installation of Shuo Ming each mode mode utilizes in various electronic devices.The typical case of this electronic device is the instrument that electronic installation is utilized as display device.As this electronic device, a guy's computer and mobile phone etc.But, the purposes of electronic installation of the present invention is not limited to the demonstration of image.For example, on photoreceptor magnetic drum image carriers such as (durm), form the exposure device (photohead) of latent image, also can use electronic installation of the present invention as irradiation by light.

Driven element of the present invention comprises electrically driven (operated) whole key element.The typical case of this driven element is because the giving of electric energy, the electrooptic element (for example OLED element) that optical properties such as brightness and transmitance change.The present invention also is defined as electro-optical device special-purpose in the driving of electrooptic element.This electro-optical device comprises: the multi-strip scanning line; Many data lines that intersect with the multi-strip scanning line; Many current potential supply lines; A plurality of unit circuits of corresponding configuration with intersecting of multi-strip scanning line and many data lines; Select the scan line drive circuit of multi-strip scanning line respectively; Respectively many data lines are supplied with the data line drive circuit of data-signal in during respectively writing; And the voltage control circuit that many current potential supply lines is set at a plurality of current potentials; Each of a plurality of unit circuits comprises: have control terminal and the first terminal and second terminal, and according to the current potential of control terminal, the driving transistors that the conducting state of the first terminal and second terminal changes; The driven element that drives according to the conducting state of driving transistors; The first terminal of electrical connection driving transistors and first on-off element of data line in during the writing an of sweep trace in selecting the multi-strip scanning line; And be electrically connected the current potential supply line in described many current potential supply lines and the control terminal of driving transistors in during the initialization before the beginning during this writes, during the driving later of the warp during this writes in the potential setting parts of second terminal of the described current potential supply line of electrical connection and driving transistors.More specifically, voltage control circuit is supplied with first current potential to a current potential supply line in during initialization, a current potential supply line is supplied with second current potential different with first current potential in during driving.

According to this structure, be used for during driving the current potential supply line dual-purpose of second terminal feeding, second current potential of driving transistors for the control terminal of driving transistors being supplied with in during initialization the wiring of first current potential, so it is same with electronic installation of the present invention, be used for the structure of the initialized key element of current potential of the control terminal of driving transistors is compared with other preparation, can simplify the structure of constituent parts circuit.

In addition, the present invention also implements as the method that is used for drive electronics.Be that driving method of the present invention is the method for drive electronics, this electronic installation possesses unit circuit, this unit circuit comprises having control terminal and the first terminal and second terminal and the conducting state between the first terminal and second terminal changes according to the current potential of control terminal driving transistors, and the driven element that drives according to the conducting state of driving transistors, wherein: in during initialization, the current potential supply line is supplied with first current potential, be electrically connected the control terminal of current potential supply line and driving transistors in during this initialization, in during warp during initialization the writing later, be electrically connected the data line of supply data-signal and the first terminal of driving transistors, in during the driving during writing after the warp, the current potential supply line is supplied with second current potential different with first current potential, be electrically connected second terminal of current potential supply line and driving transistors in during driving, thereby drive driven element.Also can obtain effect and the effect identical by this method with electronic installation of the present invention.

Electronic installation of the present invention comprises: signal wire (for example data line 15 of Fig. 8); Voltage supply line; During writing signal wire is supplied with the data supply circuit (for example data line drive circuit 25 of Fig. 8) of data voltage (for

example embodiment

2 or 3 voltage Vdata); In at least a portion during writing, the voltage of voltage supply line is set at first voltage level, and after the warp during writing, makes the voltage control circuit of the change in voltage of voltage supply line for second voltage level different with first voltage level; And unit circuit, unit circuit comprises: have control terminal and the first terminal and second terminal, and according to the voltage of described control terminal, the driving transistors that the conducting state between the first terminal and second terminal changes; The driven element that drives according to the conducting state of driving transistors; Be electrically connected a side and signal wire in the first terminal and second terminal in during writing, thereby be situated between by the opposing party of the first terminal and second terminal, control terminal supplied with the voltage set parts (for

example embodiment embodiment

2 or 3 transistor Tr 1 and Tr2) of data voltage; And have first electrode that is connected on the control terminal and be connected the capacity cell of second electrode on the voltage supply line.

In this structure, during writing in, voltage supply line is set at after first voltage, the control terminal of driving transistors is set at the voltage corresponding with data voltage (for example corresponding with the threshold voltage of data voltage and driving transistors voltage).And, after the warp during writing, if the voltage of voltage supply line is set at second voltage different with first voltage, then owing to capacitive coupling (coupling) based on capacity cell, the voltage of control terminal partly changes according to the change of the voltage of voltage supply line, in view of the above, the conducting state of driving transistors be set at write during different states.Therefore, according to described electronic installation, the complicated relevant key element that does not need the on-off element that for example exists etc. and unit circuit between driving transistors and driven element is during writing and the driving condition of its other driven element in intermediate energy region during later (drive or stop).The for example driving that can be achieved as follows, in promptly during writing, control terminal is set at the voltage corresponding with data voltage, thereby the voltage of the first terminal becomes the voltage of the driving that stops driven element, after the warp during this writes, owing to the variation in voltage of voltage supply line, make the change in voltage of control terminal, thereby the voltage of the first terminal becomes the voltage that can drive driven element.In addition, in contrast, the also driving that can be achieved as follows drives driven element in promptly during writing, and at it through stopping later the driving of driven element.

According to described electronic installation, even not by specific transistorized the first terminal of element controlling and driving and the electrical connection between the driven element, also can distinguish the driving condition of driven element during writing and during writing through later, so wish it is the structure that between the first terminal of driving transistors and driven element, does not have on-off element.According to this mode mode, can realize the simplification of structure of unit circuit and the raising of aperture opening ratio.The structure of the key element of the electrical connection that is used to control both in existence between driving transistors and the driven element is not got rid of outside scope of the present invention.Promptly according to the present invention, Control of Voltage by control terminal, warp can be distinguished the driving condition of driven element later during writing and during writing, but, if from further difference being made clear, realize that the aim of the reliable control of driven element sets out, also can adopt the structure of the key element (on-off element) that between driving transistors and driven element, has the electrical connection that is used to control both.

In the mode mode of hope of the present invention, the warp of first electrode during writing becomes floating state later.According to this mode mode, the electric charge of first electrode later of the warp during preventing to write leaks, so can make the change in voltage of control terminal reliably with high precision according to the variation in voltage of voltage supply line.

In described electronic installation,, just drive driven element (embodiment mode 2 and embodiment 3) if the voltage level of the first terminal surpasses the assigned voltage level.More specifically, in the structure that driven element is adopted the element that comprises anode that is connected electrically on the first terminal and the negative electrode of supplying with fixed voltage (for example ground voltage), when the first terminal being supplied with the also high voltage levvl of voltage levvl than negative electrode, or when the first terminal supplied with the also high voltage levvl of additive value than the threshold voltage of the voltage levvl of negative electrode and driven element, be driven.In this mode mode,, then after the warp during writing, drive driven element, and in during writing, can stop or suppressing the driving of driven element if second voltage levvl is set at also higher than first voltage levvl.

For example in certain mode mode, be electrically connected first on-off element (for

example embodiment mode

2 or 3 transistor Tr 1) of second terminal and signal wire in during the voltage set parts is included in and writes, the additive value of the threshold voltage of data voltage and driving transistors is lower than the threshold voltage of driven element.According to this mode mode, the driving of the driven element in during stopping reliably writing.It should be noted that the concrete example of the manner mode is described as embodiment mode 2 (Figure 10) in the back.Further in other mode modes, be electrically connected first on-off element of the first terminal and signal wire in during the voltage set parts is included in and writes, data voltage is lower than the threshold voltage of driven element.According to this mode mode, the driving of the driven element in during stopping reliably writing.It should be noted that the concrete example of the manner mode is described as embodiment mode 3 (Figure 15) in the back.

In concrete mode mode of the present invention, the voltage set parts comprise side in control (in for example during writing the be electrically connected both) the first terminal and second terminal and signal wire electrical connection first on-off element and control the opposing party in the first terminal and second terminal and the second switch element of the electrical connection of control terminal (for

example embodiment mode

2 or 3 transistor Tr 2), first on-off element and second switch element are by single wiring signal supplied is controlled.According to this mode mode, can make data line and control terminal conducting reliably by first on-off element and second switch element.In addition, first on-off element and second switch element so compared by the structure of the indivedual controls of signal of different system with each on-off element, can be realized the reduction of wiring quantity and the simplification of control by single wiring signal supplied is controlled publicly.

In the mode mode of hope, be included in the 3rd on-off element that warp during writing is electrically connected later the supply lines (for example voltage supply line 17 of the power lead 181 of embodiment mode 2 and embodiment mode 3) of supplying with assigned voltage and second terminal (for

example embodiment mode

2 or 3 transistor Tr 3), first on-off element, second switch element and the 3rd on-off element are by single wiring signal supplied is controlled.According to this mode mode, after the warp during writing, second terminal of driving transistors is set at assigned voltage, so can stably keep the conducting state (driving condition of driven element) of driving transistors.First on-off element, second switch element and the 3rd on-off element so compared by the structure of the indivedual controls of signal of different system with each on-off element, can be realized the reduction of wiring quantity and the simplification of control by to single wiring signal supplied control.Have more, the 3rd on-off element is the transistor with first on-off element, second switch element different conduction-types.

In the mode mode of hope of the present invention, during being included in and writing, unit circuit before the voltage of control terminal is set at the reset components of the voltage levvl of regulation.According to this mode mode, control terminal is initialized as assigned voltage before during writing, so in during writing, can reliably and promptly be set at the voltage corresponding to control terminal with data voltage.Reset components is the on-off element (for example transistor Tr es of embodiment 2 or embodiment 3) that the electrical connection of the wiring of assigned voltage and control terminal is supplied with in control.

It should be noted that, become than setting height if represented the voltage of the first terminal for example, with regard to the driven element that drives, but in contrast, if it is lower than setting to adopt the voltage of the first terminal to become, with regard to the driven element that drives.More specifically, can adopt the driven element (for example Figure 17 or Figure 18) that comprises negative electrode that is connected electrically on the first terminal and the anode of supplying with fixed voltage (for example supply voltage).In this mode mode, same by making second voltage ratio, first voltage low with each above mode mode, after the warp during writing, drive driven element, stop or suppressing the driving of driven element in during writing.

Electronic installation of the present invention can utilize in various electronic devices.The typical case of this electronic device is the instrument that electronic installation is used as display device.As this electronic device, a guy's computer and mobile phone.The purposes of electronic installation of the present invention is not limited to the demonstration of image.For example, on image carriers such as photoreceptor magnetic drum, form the exposure device (photohead) of latent image, also can use electronic installation of the present invention as the irradiation that is used for by light.

Driven element of the present invention comprises electrically driven (operated) whole key element.The typical case of this driven element is because the giving of energy, the electrooptic element (for example OLED element) that optical properties such as brightness and transmitance change.The present invention also is defined as electro-optical device special-purpose in the driving of electrooptic element.This electro-optical device comprises: data line; Voltage supply line; During writing data line is supplied with the data line drive circuit of data voltage; In at least a portion during writing, the voltage of voltage supply line is set at first voltage level, and after the warp during writing, makes the voltage control circuit of the change in voltage of voltage supply line for second voltage level different with first voltage level; And unit circuit, unit circuit comprises: have control terminal and the first terminal and second terminal, and according to the voltage of control terminal, the driving transistors that the conducting state between the first terminal and second terminal changes; The electrooptic element that drives according to the conducting state of driving transistors; Be electrically connected a side and data line in the first terminal and second terminal in during writing, thereby be situated between, control terminal is supplied with the voltage set parts of data voltage by the opposing party in the first terminal and second terminal; And have first electrode that is connected on the control terminal and be connected the capacity cell of second electrode on the voltage supply line.According to this structure, also can produce effect and the effect same with electronic installation of the present invention.

In addition, the present invention also is defined as being used for the method for drive electronics.Promptly this driving method is the method for drive electronics, described electronic installation possesses unit circuit, this unit circuit comprises having control terminal and the first terminal and second terminal and the conducting state between described the first terminal and second terminal changes according to the voltage of control terminal driving transistors, and the driven element that drives according to the conducting state of described driving transistors, it is characterized in that: in during writing, signal wire is supplied with data voltage, and be electrically connected a side and signal wire in the first terminal and second terminal, by the opposing party in the first terminal and second terminal control terminal supplied with data voltage thereby be situated between; After the warp during writing, make the change in voltage ormal weight of control terminal, thereby set transistorized conducting state.More specifically, unit circuit comprises the capacity cell that has first electrode that is connected on the control terminal and be connected second electrode on the voltage supply line, in at least a portion during writing, the voltage of voltage supply line is set at first voltage level, during writing through after, make the change in voltage of voltage supply line be second voltage level different, thereby make the change in voltage of control terminal with first voltage level.According to this driving method, as electronic installation of the present invention is illustrated, the complicated relevant key element that does not need the on-off element that exists between driving transistors and the driven element etc. and unit circuit can be during writing and during writing be distinguished the driving condition (drive or stop) of driven element in during later.

Description of drawings

Following brief description accompanying drawing.

Fig. 1 is the block diagram of the electronic device construction of expression embodiment of the present invention 1.

Fig. 2 is the circuit diagram of the structure of a unit circuit of expression.

Fig. 3 is the sequential chart that is used to illustrate the action of electronic installation.

Fig. 4 is the circuit diagram of appearance of the unit circuit in during the expression initialization.

Fig. 5 is the circuit diagram of appearance of the unit circuit in during expression writes.

Fig. 6 is the circuit diagram of the appearance of the unit circuit in during expression drives.

Fig. 7 is expression and the circuit diagram of the structure of the unit circuit of the Comparative Examples of embodiment 1.

Fig. 8 is the block diagram of the electronic device construction of expression embodiment of the present invention 2.

Fig. 9 is the figure of the height of each voltage of utilizing in the electronic installation of expression.

Figure 10 is the circuit diagram of the structure of a unit circuit of expression.

Figure 11 is the sequential chart that is used to illustrate the action of electronic installation.

Figure 12 is the circuit diagram of appearance of the unit circuit in during the expression initialization.

Figure 13 is the circuit diagram of appearance of the unit circuit in during expression writes.

Figure 14 is the circuit diagram of the appearance of the unit circuit in during expression drives.

Figure 15 is the circuit diagram of structure of a unit circuit of expression embodiment of the present invention 3.

Figure 16 is the circuit diagram of the structure of the unit circuit in during expression the writing of embodiment 3.

Figure 17 is the circuit diagram of structure of the unit circuit of local expression variation.

Figure 18 is the circuit diagram of structure of the unit circuit of local expression variation.

Figure 19 is the stereographic map of the concrete mode of expression electronic device of the present invention.

Figure 20 is the stereographic map of the concrete mode of expression electronic device of the present invention.

Figure 21 is the stereographic map of the concrete mode of expression electronic device of the present invention.

Figure 22 is the circuit diagram of the structure of local expression unit circuit in the past.

The explanation of symbol.

The D-electronic installation; 10-element arrays portion; The 11-electrooptic element; The 12-sweep trace; 121-first control line; 122-second control line; 123-the 3rd control line; The 14-data line; 17-current potential supply line; The 22-scan line drive circuit; The 24-data line drive circuit; The 27-voltage control circuit; The Tdr-driving transistors; Tr1, Tr2, Tr3, Tr4-transistor; The Cs-capacity cell; Ya[i]-first control signal; Yb[i]-second control signal; Yc[i] the-the 3rd control signal; L[i]-current potential of current potential supply line; Vss-first current potential; Vdd-second current potential.

Embodiment

(A: embodiment 1)

Fig. 1 is the block diagram of the electronic device construction of expression embodiment of the present invention 1.Electronic installation D shown in Figure 1 is as the parts that are used for displayed image, the electro-optical device that adopts in various electronic devices comprises a plurality of unit circuit U is arranged as planar element arrays portion 10, is used to drive the voltage control circuit 27 that the scan line drive circuit 22 of constituent parts circuit U and data line drive circuit 24 and control offer the current potential of constituent parts circuit U.

As shown in Figure 1, in element arrays portion 10, be formed on m bar sweep trace 12 that directions X extends, the m bar current potential supply lines 17 that extend at directions X in pairs with each sweep trace 12, at the n bar data line 14 (m and n are natural numbers) that extends with the Y direction of directions X quadrature.The constituent parts circuit U be configured in sweep trace 12 and current potential supply line 17 to corresponding position of intersecting of data line 14.Therefore, the constituent parts circuit U be arranged as vertical m capable * horizontal n row rectangular.

Scan line drive circuit 22 is the circuit (in other words, selecting the circuit of a plurality of unit circuit U with the unit of going) that are used for selecting in order respectively a plurality of sweep traces 12.And data line drive circuit 24 generate be connected the sweep trace 12 that scan line drive circuit 22 selects on the corresponding respectively data-signal X[1 of 1 row (n) unit circuit U]～X[n], and export to each data line 14.During the sweep trace 12 of selecting i capable (i is the integer that satisfies 1≤i≤m), in (describe later write period P 2), offer the data-signal X[j of the data line 14 of j row (j is the integer that satisfies 1≤j≤n)] become with to belonging to the corresponding current potential Vdata of gray scale of the unit circuit U appointment that the capable j of i is listed as.The gray scale of constituent parts circuit U is specified by the gradation data of supplying with from the outside.

Voltage control circuit 27 is to be used for a plurality of current potential supply lines 17 are supplied with current potential L[1 respectively]～L[m] circuit.Current potential L[1]～L[m] respectively the side from the power supply potential of the power supply potential of low level side (below be called " first current potential ") Vss and high-order side (below be called " second current potential ") Vdd switch to the opposing party successively.

The concrete structure of constituent parts circuit U is described below with reference to Fig. 2.In Fig. 2, only diagram is positioned at a unit circuit U of the capable j row of i, but the other unit circuit U also is same structure.In addition, the transistorized conduction type of each of component unit circuit U can the suitable change from the mode of Fig. 2.

As shown in Figure 2, unit circuit U comprises the electrooptic element 11 that is inserted between current potential supply line 17 and the ground wire (current potential Vss).Electrooptic element 11 is the driven elements according to the luminous current drive-type of the brightness corresponding with the drive current Ie1 that offers it.The electrooptic element 11 of present embodiment is the OLED element that has the luminescent layer that is made of organic EL Material between anode and negative electrode.

As shown in Figure 2, in Fig. 1, for convenience, as 1 the wiring and in fact illustrated sweep trace 12 comprises 3 wirings (first control line 121, second control line 122, the 3rd control line 123).Each wiring is supplied with the signal of regulation from scan line drive circuit 22.Promptly first control line 121 that constitutes the capable sweep trace of i 12 is supplied with the first control signal Ya[i], second control line 122 with delegation is supplied with the second control signal Yb[i], the 3rd control line 123 with delegation is supplied with the 3rd control signal Yc[i].It should be noted that the action of the concrete waveform and the unit circuit U corresponding with it of each signal is described in the back.

As shown in Figure 2, insert the driving transistors Tdr of p channel type at the circuit of 11 anode from current potential supply line 17 to electrooptic element.Driving transistors Tdr is current potential (below be called " the grid potential ") Vg according to grid, and the conducting state of source electrode (S) and drain electrode (D) changes, thereby generates the parts of the drive current Ie1 corresponding with this grid potential Vg.Be conducting state (promptly with the grid potential Vg corresponding gray scale) driving of electrooptic element 11 according to driving transistors Tdr.

Between the drain electrode of driving transistors Tdr and data line 14, insert the transistor Tr 1 of the n channel type of both electrical connections (conducting and non-conduction) of control.The grid of transistor Tr 1 is connected on first control line 121.Therefore, the first control signal Ya[i] if high level, transistor Tr 1 just becomes conducting state, data-signal X[j] current potential Vdata be provided for the drain electrode of driving transistors Tdr, the first control signal Ya[i] if low level, the drain electrode of driving transistors Tdr just separates from data line 14 electricity.It should be noted that the current potential L[i of current potential supply line 17] be changed to the opposing party from the side of the first current potential Vss and the second current potential Vdd, so the drain electrode of driving transistors Tdr and source electrode on the meaning of strictness according to current potential L[i], change at any time., in the present embodiment, according to the current potential L[i of current potential supply line 17] height of current potential during the second current potential Vdd in (writing period P 2), stipulate drain electrode and the source electrode of driving transistors Tdr easily.

The first electrode E1 that on the grid of driving transistors Tdr, connects capacity cell Cs.This capacity cell Cs is the parts (in other words, being used to keep the parts of grid potential Vg) of the electric charge that is used to keep corresponding with the grid potential Vg of driving transistors Tdr.The second electrode E2 of capacity cell Cs is connected on adjacent lines first control line 121 that promptly (i-1) goes of this unit circuit U., the first electrode E2 of capacity cell Cs that belongs to the constituent parts circuit U of first row is connected with the regulation wiring that set potential is provided (omit and illustrate).It should be noted that, when keeping grid potential Vg by the grid capacitance of driving transistors Tdr and the stray capacitance that is connected the wiring on this grid, separate configurations capacity cell Cs not.

And between the capable current potential supply line 17 of the source electrode of driving transistors Tdr and i, connect the transistor Tr 2 of the n channel type of both electrical connections of control.The grid of this transistor Tr 2 is connected on second control line 122.Therefore, if the second control signal Yb[i] be high level, transistor Tr 2 just becomes conducting state, the source electrode of driving transistors Tdr and current potential supply line 17 are electrically connected, if and the second control signal Yb[i] be low level, transistor Tr 2 just becomes off-state, both electrical isolations.

And, between the grid of driving transistors Tdr and source electrode, insert the transistor Tr 3 of the n channel type of both electrical connections of control.The grid of this transistor Tr 3 is connected on the 3rd control line 123.Therefore, if the 3rd control signal Yc[i] change high level into, transistor Tr 3 just becomes conducting state, driving transistors Tdr is connected on the diode, if the 3rd control signal Yc[i] change low level into, transistor Tr 3 just becomes off-state, and the diode of removing driving transistors Tdr connects.If transistor Tr 2 and transistor Tr 3 both sides are changed conducting state into, the grid of driving transistors Tdr just is connected electrically on the current potential supply line 17.Promptly be used for grid potential Vg is set at the current potential L[i of current potential supply line 17] parts (potential setting parts) constitute by transistor Tr 2 and transistor Tr 3.

Between the anode of the drain electrode of driving transistors Tdr and electrooptic element 11, insert the transistor Tr 4 of the p channel type of both electrical connections of control.The grid of this transistor Tr 4 and transistor Tr 2 are connected on first control line 121 in the same manner.Therefore, as the first control signal Ya[i] when keeping low level, transistor Tr 4 becomes conducting state, can supply with drive current Ie1 to electrooptic element 11.And the first control signal Ya[i] when keeping high level, transistor Tr 4 becomes off-state, so the route of blocking drive current Ie1, electrooptic element 11 extinguishes.

Because transistor Tr 1 and transistor Tr 4 are opposite conduction types, so the supply by public signal (the first control signal Ya[i]), conducting state is separately switched with complementing each other.If promptly transistor Tr 1 is a conducting state, transistor Tr 4 just becomes off-state, if transistor Tr 1 is an off-state, transistor Tr 4 just becomes conducting state.When because transistor Tr 1 and transistor Tr 4 are when being identical conduction types, in order to control them, different wirings necessitate.And in the present embodiment, for the control of transistor Tr 1 and transistor Tr 4, wiring of dual-purpose (first control line 121) so pass through the reduction of wiring quantity, can be simplified the structure of electronic installation D.

Below, with reference to Fig. 3, the concrete waveform of each signal that utilizes among the electronic installation D is described.As shown in Figure 3, the first control signal Ya[1]～Ya[m] be the signal that in respectively writing period P 2, becomes high level successively.The i.e. first control signal Ya[i] in vertical scanning period (1F), write in the period P 2 at i, keep high level, and in during in addition, keep low level.The first control signal Ya[i] mean the selection that i is capable to the transformation of high level.

The second control signal Yb[i] as shown in Figure 3, be at the first control signal Ya[i] become before the beginning that writes period P 2 of high level during (below be called " during the initialization ") P1, this writes period P 2 during later among (below be called " during the driving ") P3, become high level, keep low level signal in (particularly writing period P 2) during other.And the 3rd control signal Yc[i] be at the first control signal Ya[i] become the writing in period P 2 and the initialization period P 1 before of high level, become high level, keep low level signal in (particularly driving period P 3) during other.It should be noted that, in the present embodiment, the terminal point of having represented respectively to write period P 2 to after the starting point that writes period P 2 during be the situation of initialization period P 1, but each initialization period P 1 and respectively write period P 2 can the empty standard width of a room in an old-style house every.Equally, respectively write period P 2 and each initialization period P 3 can the empty standard width of a room in an old-style house every and make structure described later.By in each initialization period P 1 with respectively write temporal interval is set between the period P 2, can be more reliably the grid potential Vg initialization of the driving transistors Tdr of each initialization period P 1.In addition, by respectively writing period P 2 and respectively driving the interval of the time that is provided with between the period P 3, can be set at the grid potential Vg that respectively writes period P 2 and data-signal X[j more reliably] corresponding current potential.

As shown in Figure 3, repeat the current potential L[i of the capable current potential supply line 17 of i] at the first control signal Ya[i] become high level write period P 2 midway constantly, be changed to the second current potential Vdd from the first current potential Vss, and after 3 warps of the driving period P after this writes period P 2, be changed to the circulation of the first current potential Vss from the second current potential Vdd.Therefore, the current potential L[i of the current potential supply line 17 that i is capable] stride between the whole district of initialization period P 1 and keep the first current potential Vss, and stride between the whole district that drives period P 3, keep the second current potential Vdd.

The concrete action of electronic installation D is described below with reference to Fig. 4～Fig. 6.Below be divided into initialization period P 1 and write period P 2 and driving period P 3, the action of the unit circuit U that belongs to the capable j row of i is described.

(a) initialization period P 1 (Fig. 4)

In initialization period P 1, the first control signal Ya[i] keep low level, so as shown in Figure 4, transistor Tr 1 is kept off-state, and transistor Tr 4 changes conducting state into.And in initialization period P 1, the second control signal Yb[i] and the 3rd control signal Yc[i] high level kept.Therefore, as shown in Figure 4, transistor Tr 2 and transistor Tr 3 both sides are changed conducting state into.In view of the above, the grid of driving transistors Tdr is electrically connected with current potential supply line 17.

And as shown in Figure 3 and Figure 4, in initialization period P 1, the current potential L[i of current potential supply line 17] maintain the first current potential Vss by voltage control circuit 27.Therefore, the grid potential Vg of driving transistors Tdr is set at the first current potential Vss.Promptly regardless of the electric charge of in capacity cell Cs, putting aside in the starting point of initialization period P 1 (no matter before write period P 2, according to data-signal X[j], the voltage that keeps in capacity cell Cs how), grid potential Vg is initialized as the first current potential Vss.

It should be noted that in initialization period P 1, transistor Tr 2 and transistor Tr 4 both sides become conducting state, form from current potential supply line 17 to electrooptic element 11 route., the current potential L[i of current potential supply line 17] keep identical current potential (the first current potential Vss) with the negative electrode of electrooptic element 11, so drive current Ie1 does not flow to electrooptic element 11.Therefore, in initialization period P 1, electrooptic element 11 is not luminous.

(b) write period P 2 (Fig. 5)

In writing period P 2, the second control signal Yb[i] change low level into.Therefore, as shown in Figure 5, transistor Tr 2 changes off-state into.Under the state that unit circuit U separates from current potential supply line 17 electricity, the current potential L[i of current potential supply line 17] change to the second current potential Vdd by voltage control circuit 27 from the first current potential Vss.

As shown in Figure 3, at the first control signal Ya[i] become the writing in the period P 2 of high level, the data-signal X[j of the data line 14 of j row] be set at the corresponding current potential Vdata of the gray scale of the unit circuit U that the j capable with belonging to i be listed as (in Fig. 3, be expressed as Vdata[i, j]).And in writing period P 2, the first control signal Ya[i] and the 3rd control signal Yc[i] both sides become high level, so as shown in Figure 4, transistor Tr 4 becomes off-state, and transistor Tr 1 and transistor Tr 3 become conducting state.Therefore, the grid of driving transistors Tdr is situated between by source electrode and drain electrode and the transistor Tr 1 of transistor Tr 3 and driving transistors Tdr, is electrically connected with data line 14.In view of the above, the grid potential Vg of driving transistors Tdr as shown in Figure 3, the current potential Vss that sets from initialization period P 1 rises, and is converged in data-signal X[j] current potential Vdata and the difference value (Vg=Vdata-Vth) of the threshold voltage vt h of driving transistors Tdr.Write the convergent time span that period P 2 is set at enough grid potential Vg.

(c) drive period P 3 (Fig. 6)

In driving period P 3, the first control signal Ya[i] become low level.Therefore, transistor Tr 1 changes off-state into, and in view of the above, unit circuit U separates from data line 14 electricity.In addition, transistor Tr 4 changes conducting state into.Further, by the 3rd control signal Yc[i] changing low level into, transistor Tr 3 becomes off-state.Therefore, the diode of driving transistors Tdr connects releasing.

And in driving period P 3, the second control signal Yb[i] become high level.Therefore, transistor Tr 2 changes conducting state into, and the source electrode of driving transistors Tdr is electrically connected with current potential supply line 17.Promptly in driving period P 3, formation from current potential supply line 17 via transistor Tr 2 and driving transistors Tdr and transistor Tr 4, to the route of the drive current Ie1 of electrooptic element 11, the source electrode of driving transistors Tdr is supplied with the current potential L[i of the current potential supply line 17 in this moment] i.e. the second current potential Vdd.

As shown in Figure 3, the first control signal Ya[i-1 of (i-1) row] keep certain level in capable the writing period P 2 and drive among period P 3 both sides of i.Therefore, write the grid potential Vg that sets in the period P 2 and in driving period P 3, stride between the whole district, maintain and data-signal X[j] corresponding current potential (Vdata-Vth).According to data-signal X[j] set the conducting state of driving transistors Tdr, thus the drive current Ie1 corresponding with current potential Vdata is provided for electrooptic element 11 from current potential supply line 17 via transistor Tr 2 and driving transistors Tdr and transistor Tr 4.And electrooptic element 11 is luminous with the brightness corresponding with drive current Ie1.

If supposition driving transistors Tdr is in saturation region operation now, the drive current Ie1 that then offers electrooptic element 11 in driving period P 3 is showed by following expression formula (1).It should be noted that " β " of expression formula (1) is the gain coefficient of driving transistors Tdr, " Vgs " is the voltage between grid-source of driving transistors Tdr.

Ie1＝(β/2)(Vgs-Vth) ²…(1)

In driving period P 3, grid potential Vg maintains and writes " Vdata-Vth " that sets in the period P 2, source electrode to driving transistors Tdr is situated between by transistor Tr 2 supply current potential L[i] (the second current potential Vdd), so voltage Vgs becomes " Vdd-(Vdata-Vth) ".If substitution it, then expression formula (1) is deformed into following expression formula (2).

Ie1＝(β/2)(Vdd-Vdata) ²…(2)

Be the threshold voltage vt h that drive current Ie1 does not exist with ... driving transistors Tdr.Therefore, according to present embodiment, the skew of the threshold voltage vt h of compensation constituent parts circuit U can make each electrooptic element 11 luminous with desirable brightness with high precision.

As mentioned above, in the present embodiment, the current potential L[i of current potential supply line 17] switch to the opposing party successively from the side of the first current potential Vss and the second current potential Vdd.And, at current potential L[i] be the first current potential Vss during at least a portion (initialization period P 1) in, the grid of driving transistors Tdr is connected with current potential supply line 17, thus grid potential Vg is initialized as the first current potential Vss.Therefore,, there is the structure complicated that does not make unit circuit U according to present embodiment, just can be the initialized advantage of grid potential Vg.If it is describe its effect in detail, then as described below.

As the structure that is used for grid potential Vg is initialized as the first current potential Vss, consider structure for example shown in Figure 7.In this structure, between the grid of set potential line 19 that maintains the first current potential Vss and driving transistors Tdr, insert transistor Tr 0.And, in initialization period P 1, make transistor Tr 0 be conducting state, be electrically connected the grid of set potential line 19 and driving transistors Tdr, thereby grid potential Vg is initialized as the first current potential Vss., in this structure, the wiring or the set potential line 19 that are necessary to dispose transistor Tr 0 and are used to control it, so the structure complicated of constituent parts circuit U, manufacturing cost rises, decrease in yield, and aperture opening ratio descends.According to present embodiment, need not dispose transistor Tr 0 or set potential line 19, so can effectively solve the problem in the structure of Fig. 7.

In the present embodiment, keep the second electrode E2 of the capacity cell Cs of grid potential Vg to be connected with first control line 121 of adjacent lines.Here, as the structure that is used to keep grid potential Vg, also consider the structure that the second electrode E2 of capacity cell Cs is electrically connected with current potential supply line 17., according to this structure, if be accompanied by the supply that drives the drive current Ie1 in the period P 3, the current potential L[i of current potential supply line 17] descend, the grid potential Vg of driving transistors Tdr also changes from desirable value (Vdata-Vth).And in the present embodiment, on first control line 121 of route that is not drive current Ie1, connect the second electrode E2, so can avoid the change of the grid potential Vg that the supply of drive current Ie1 causes.Therefore, can generate and data-signal X[j with high precision] the corresponding drive current Ie1 of current potential Vdata.

It should be noted that the junction of the second electrode E2 can be to converge to " Vdata-Vth " to the terminal point that drives period P 3 from grid potential Vg during writing period P 2, maintains the wiring of almost fixed current potential, is not limited to first control line 121 of adjacent lines.; as present embodiment; if as the wiring that is used for the second electrode E2 of capacity cell Cs is maintained the almost fixed current potential; the structure of dual-purpose first control line 121; then compare, have the advantage of the wiring quantity that can cut down electronic installation D with the structure that forms in addition outside each control line that is routed in of the junction that becomes the second electrode E2.In addition, in the present embodiment, the second electrode E2 of the capacity cell Cs of the constituent parts circuit U that i is capable is connected with first control line 121 of (i-1) row of selecting before.Therefore, compare with the structure that (i-1) row first control line 121 in addition is connected with the second electrode E2, grid potential Vg is set at and data-signal X[j] behind the corresponding current potential (Vdata-Vth), the second electrode E2 that can fully guarantee each row maintain set potential during.

It should be noted that, as present embodiment, when driving transistors Tdr is the p channel type, in writing period P 2, can provide noble potential (i.e. the second current potential Vdd) the second electrode E2.In this structure, if transistor Tr 1 is the p channel type, transistor Tr 4 is the n channel type, just can control each transistor equally with embodiment 1.

In addition, if in the capable initialization period P 1 of i, first control line 121 of (i-1) row is set at the first current potential Vss, and then the potential difference (PD) between the first electrode E1 and the second electrode E2 becomes 0, so might can't make capacity cell Cs keep the voltage of stipulating.Therefore, the first control signal Ya[i that first control line 121 is supplied with] low level can be set at different current potential with the first current potential Vss.

(B: variation)

Can increase various distortion in the embodiment described above.If it is represent the mode of concrete distortion, then as described below.It should be noted that, can each following mode of appropriate combination.

(1) variation 1

The concrete structure of unit circuit is not limited to the example of Fig. 2.For example in above mode, the representation unit circuit U comprises the structure of transistor Tr 2 and transistor Tr 3, but can be included in the gate turn-on that makes current potential supply line 17 and driving transistors Tdr in the initialization period P 1, and make the parts (potential setting parts) of the source electrode conducting of current potential supply line 17 and driving transistors Tdr in driving period P 3, concrete mode can be arbitrarily.

In above mode, expression transistor Tr 1 and transistor Tr 4 be by the structure of public signal (the first control signal Ya[i]) control, but also can be respectively by the structure of different signal controlling.Therefore, transistor Tr 1 can be identical conduction type with transistor Tr 4.In addition, can adopt the structure (drain electrode of driving transistors Tdr and electrooptic element 11 direct-connected structures) that does not dispose transistor Tr 4.

(2) variation 2

In above mode, the current potential L[i of the current potential supply line 17 in the expression initialization period P 1] be the situation of the first current potential Vss of the power supply potential of low level side, still the concrete level of the first current potential Vss can change arbitrarily., at the current potential L[i that in the initialization period P 1 grid of driving transistors Tdr is supplied with] shown in above mode, hope is that to make driving transistors Tdr be the level of conducting state.According to this structure, with the current potential L[i in the initialization period P 1] be set at that to make driving transistors Tdr be that the structure of the level of off-state is compared, the grid potential Vg of driving transistors Tdr is converged to and data-signal X[j] corresponding current potential (Vdata-Vth).

(3) variation 3

In above mode, as electrooptic element 11, enumerated the OLED element, but the electrooptic element that adopts in the electronic installation of the present invention is not limited thereto.For example replace the OLED element, can utilize inorganic EL element, field emission (FE) element, surface conduction type emission (SE:Surface-conduction Electron-emitter) element, ballistic electron emission (BS:Ballisticelectron Surface Emitting) element, LED various self-emission devices, electrophoresis element and electricity such as (Light Emitting Diode) to cause various electrooptic elements such as color display element.In addition, the present invention also can be applied in the sensing devices such as biochip.Driven element of the present invention is the notion that comprises by whole key elements of giving driving of electric energy, and electrooptic elements such as light-emitting component only are the examples of driven element.

(C: embodiment 2)

Fig. 8 is the block diagram of the electronic device construction of expression embodiment of the present invention 2.The electronic installation D of Fig. 8 is as the parts that are used for displayed image and at the electro-optical device that various electronic devices adopt, and comprises the voltage control circuit 27 that a plurality of unit circuit U are arranged as planar element arrays portion 10, are used to drive the scan line drive circuit 23 of constituent parts circuit U and data line drive circuit 25 and control the voltage that offers the constituent parts circuit U.

As shown in Figure 8, in element arrays portion 10, be formed on m bar sweep trace 13 that directions X extends, the m bar voltage supply lines 17 that extend at directions X in pairs with each sweep trace 13, at the n bar data line 15 (m and n are natural numbers) that extends with the Y direction of directions X quadrature.The constituent parts circuit U is configured in corresponding with intersecting of the group of sweep trace 13 and voltage supply line 17 and data line 15 position.Therefore, these unit circuits U be arranged as vertical m capable * matrix of horizontal n row.

Scan line drive circuit 23 is the circuit that are used for selecting successively with the order of regulation (the selecting a plurality of unit circuit U with the unit of going) of multi-strip scanning line 13.And data line drive circuit 25 generate be connected the sweep trace 13 that scan line drive circuit 23 selects on the corresponding respectively data-signal X[1 of 1 row (n) unit circuit U]～X[n], and export to each data line 15.During the sweep trace 13 of selecting i capable (i is the integer that satisfies 1≤i≤m), offer the data-signal X[j of the data line 15 of j row (j is the integer that satisfies 1≤j≤n)] be and voltage signal to the corresponding voltage Vdata of the gray scale of the unit circuit U appointment that belongs to the capable j row of i.The gray scale of constituent parts circuit U is specified by the gradation data of supplying with from the outside.

Voltage control circuit 27 is to the supply voltage of the supply voltage of the high-order sides of a plurality of unit circuit U public supplies (below be called " supply voltage ") Vdd and low level side (below be called " ground voltage ") Vss, and to many voltage supply lines 17 service voltage L[1 respectively]～L[m] circuit.The ground voltage Vss of present embodiment is the current potential that becomes the voltage reference of each one.

Fig. 9 is the figure of the height of each voltage of utilizing among the expression electronic installation D.As shown in Figure 9, L[1]～L[m] respectively the side from supply voltage Vdd and assigned voltage (below be called " writing voltage ") V0 switch to the opposing party successively.The voltage V0 that writes of present embodiment is a voltage than supply voltage Vdd only low " Δ V1 ".In addition, it is also lower than ground voltage Vss to write voltage V0.

The concrete structure of constituent parts circuit U is described below with reference to Figure 10.It should be noted that in Figure 10, only diagram is positioned at a unit circuit U of the capable j row of i, but the other unit circuit U also is same structure.In addition, the transistorized conduction type of each of component unit circuit U can the suitable change from the mode of Figure 10.

As shown in figure 10, in Fig. 8, for convenience, as 1 the wiring and in fact illustrated sweep trace 13 comprises 2 wirings (first control line 131, second control line 132).Respectively first control line 131, second control line 132 are supplied with signal from scan line drive circuit 23.Promptly first control line 131 that constitutes the capable sweep trace of i 13 is supplied with the first control signal Ya[i], second control line 132 with delegation is supplied with the second control signal Yb[i].In addition, the capable unit circuit U of i is situated between by the capable voltage supply line 17 service voltage L[i of i], and to the constituent parts circuit U via public power lead 181 supply line voltage Vdd.

As shown in figure 10, unit circuit U comprises electrooptic element 11, driving transistors Tdr, 4 transistors (Tr1, Tr2, Tr3, Tres) and capacity cell C.Wherein electrooptic element 11 is the key elements (driven element) that become the object of driving in electronic installation D.The electrooptic element 11 of present embodiment be according to the light-emitting component of the luminous current drives type of the electric current that its is supplied with (below be called " the drive current ") brightness that Ie1 is corresponding.As such electrooptic element 11, adopt the OLED element that between anode and negative electrode, has the luminescent layer that constitutes by organic EL (Electroluminescent) material.The negative electrode of the electrooptic element 11 of constituent parts circuit U is connected with the ground wire that ground voltage Vss is provided is public.Adding of the forward voltage of electrooptic element 11 by surpassing threshold voltage vt h_EL, luminous.

The driving transistors Tdr of Figure 10 (threshold voltage vt h_TR) is the transistor of n channel type that is used for the magnitude of current of controlling and driving electric current I e1.More specifically, driving transistors Tdr is according to the voltage of grid (below be called " grid voltage ") Vg, and the conducting state between source electrode and the drain electrode changes, thereby generates the drive current Ie1 of the current value corresponding with this grid voltage Vg.Therefore, electrooptic element 11 drives according to the conducting state (promptly corresponding with grid voltage Vg gray scale) of driving transistors Tdr.It should be noted that in the present embodiment, the drain electrode of driving transistors Tdr and source electrode voltage height separately changes in time, so on the meaning of strictness, drain electrode and the source electrode of driving transistors Tdr change at any time.; following; the conduction type of considering driving transistors Tdr is the n type; the height of voltage of each terminal of the driving transistors Tdr when by driving transistors Tdr electrooptic element 11 being supplied with drive currents perhaps is situated between; for explanation easily; the terminal of electrooptic element 11 1 sides of driving transistors Tdr is expressed as " source electrode ", and the terminal of its opposite side is expressed as " drain electrode ".

The source electrode of driving transistors Tdr directly is connected with the anode of electrooptic element 11.Promptly to the route of the drive current Ie1 of the anode of electrooptic element 11, there is not any on-off element at source electrode from driving transistors Tdr.Therefore, electrooptic element 11 is luminous because the voltage (being the anode voltage of electrooptic element 11) of the source electrode of driving transistors Tdr surpasses the threshold voltage vt h_EL of electrooptic element 11.It should be noted that, if select the characteristic of electrooptic element 11, thereby threshold voltage vt h_EL becomes below the threshold voltage vt h_TR of driving transistors Tdr, just can be data-signal X[j] the lower limit (for example corresponding voltage Vdata) of voltage Vdata with minimum gray scale be set at high voltage.

Transistor Tr 1 is the on-off element that is used for the drain electrode of controlling and driving transistor T dr and the electrical connection of data line 15 (conducting and non-conduction).Transistor Tr 2 is the on-off elements that are used for the electrical connection of the grid of controlling and driving transistor T dr and source electrode.In addition, transistor Tr 3 is the on-off elements that are used for the electrical connection of the drain electrode of controlling and driving transistor T dr and voltage supply line 17.

Transistor Tr 1, transistor Tr 2 and transistor Tr 3 grid separately and 131 public connections of first control line.And the conduction type of transistor Tr 1, transistor Tr 2 is n channel type, and the conduction type of transistor Tr 3 is p channel type.Therefore, transistor Tr 1, transistor Tr 2 and transistor Tr 3 are switched conducting state with complementing each other.If the i.e. first control signal Ya[i] be high level, then transistor Tr 1, transistor Tr 2 become conducting state, and transistor Tr 3 becomes off-state.And if the first control signal Ya[i] be low level, then transistor Tr 1, transistor Tr 2 become off-state, and transistor Tr 3 becomes conducting state.In the present embodiment, as mentioned above, 3 transistors (Tr1, Tr2, Tr3) are connected in the single wiring, by public signal (the first control signal Ya[i]) control, thus be connected to different wirings on, compare by the structure of the signal controlling of different system, can realize the reduction of wiring quantity and the simplification of control, in view of the above, aperture opening ratio improves, and yield rate is improved.

As shown in figure 10, the first electrode E1 that on the grid of driving transistors Tdr, connects capacity cell C.This capacity cell C is the parts (in other words, being used to keep the parts of grid voltage Vg) of the electric charge that is used to keep corresponding with the grid voltage Vg of driving transistors Tdr.The second electrode E2 of capacity cell C is connected on the voltage supply line 17.Between the grid of driving transistors Tdr and voltage supply line 17, have capacity cell C, so grid voltage Vg is subjected to the voltage L[i of voltage supply line 17] change influence and change.

The transistor Tr es of p channel type shown in Figure 10 is inserted between the grid and power lead 181 of driving transistors Tdr, is used to control the on-off element of both electrical connections.The grid of this transistor Tr es is connected on second control line 132.Therefore, if the second control signal Yb[i] be high level, transistor Tr es just becomes off-state, if the second control signal Yb[i] be low level, transistor Tr es just becomes conducting state, and grid voltage Vg is initialized as supply voltage Vdd.

The concrete waveform of each signal that utilizes among the electronic installation D is described below with reference to Figure 11.As shown in figure 11, the first control signal Ya[1]～Ya[m] be the signal that becomes high level each specified time limit among (below be called " during the writing ") P2 successively in each frame (1F).The i.e. first control signal Ya[i] in a frame i write in the period P 2, keep high level, and keep low level in during in addition.The first control signal Ya[i] the transformation to high level mean the selection that i is capable.And the second control signal Yb[i] as shown in figure 11, be at the first control signal Ya[i] become before the beginning that writes period P 2 of high level during become low level among (below be called " during the initialization ") P1, keep the signal of high level in during in addition.

In addition, the voltage L[i of the voltage supply line 17 that i is capable] at the first control signal Ya[i] become writing of high level and keep in period P 2 and the initialization period P 1 before and write voltage V0, keep supply voltage Vdd among (below be called driving during) P3 during later writing period P 2.If describe in detail, voltage L[i then] from the terminal point that writes period P 2 to the starting point of stipulated time through driving period P 3 later, rise to supply voltage Vdd from writing voltage V0, drop to once more at the terminal point that drives period P 3 and write voltage V0.It should be noted that initialization period P 1 and write between the period P 2, write period P 2 and drive between the period P 3 and the having or not of interval that drives between period P 3 and the initialization period P 1 is arbitrarily.If in initialization period P 1 with write the interval of the time that is provided with between the period P 2, just can be in initialization period P 1 more reliably the grid voltage Vg initialization of driving transistors Tdr.In addition, if, in writing period P 2, just can be adjusted into the level corresponding to grid voltage Vg reliably with voltage Vdata at the interval that writes the time that is provided with between period P 2 and the driving period P 3.

The concrete action of electronic installation D is described below with reference to Figure 12～Figure 14.Below divide into initialization period P 1, write period P 2 and drive period P 3, the action of the unit circuit U that belongs to the capable j row of i is described.

(a) initialization period P 1 (Figure 12)

In initialization period P 1, the second control signal Yb[i] change low level into, so as shown in figure 12, transistor Tr es keeps conducting state.Therefore, the grid of driving transistors Tdr and power lead 181 are electrically connected, and grid voltage Vg is initialized as supply voltage Vdd (promptly allowing driving transistors Tdr become the voltage of conducting state).Therefore, in initialization period P 1, the electric charge that is accumulated among the capacity cell C is initialised.In addition, in initialization period P 1, the voltage L[i of voltage supply line 17] be set at and write voltage V0, so being set at, the second electrode E2 of capacity cell C writes voltage V0.It should be noted that, in initialization period P 1, the first control signal Ya[i] keep high level, so transistor Tr 1 and transistor Tr 2 become off-state, transistor Tr 3 becomes conducting state, but the voltage L[i of voltage supply line 17] be set at and write voltage V0, so electrooptic element 11 is not supplied with drive current Ie1.

It should be noted that in the present embodiment, be set forth in the initialization period P 1, grid voltage Vg is initialized as the structure of supply voltage Vdd, but the voltage that uses in the initialization is not limited to supply voltage Vdd.For example can be initialized as voltage more than the threshold voltage vt h_TR of driving transistors Tdr to grid voltage Vg.Further, if the voltage that in the initialization period P 1 grid of driving transistors Tdr is added is set at the threshold voltage vt h_TR height than driving transistors Tdr, than the also low voltage of the threshold voltage vt h_EL of electrooptic element 11, in initialization period P 1 with write in the period P 2, drive current Ie1 flows to electrooptic element 11 (therefore, electrooptic element 11 is luminous hardly) hardly.

(2) write period P 2 (Figure 13)

In after initialization period P 1 warp, (writing period P 2 and drive period P 3), the second control signal Yb[i] keep high level, so as shown in figure 13, transistor Tr es keeps off-state.And in writing period P 2, the first control signal Ya[i] change high level into.Therefore, transistor Tr 3 becomes off-state, driving transistors Tdr and voltage supply line 17 electrical isolations.In addition, transistor Tr 1 changes conducting state into, thereby the drain electrode of driving transistors Tdr and data line 15 are electrically connected, and because transistor Tr 2 changes conducting state into, the source electrode of driving transistors Tdr is electrically connected (diode is connected) with grid.The grid that is driving transistors Tdr is electrically connected with data line 15 via the source electrode of transistor Tr 2 and driving transistors Tdr and drain electrode and transistor Tr 1.

Therefore, in writing period P 2, the grid voltage Vg of driving transistors Tdr as shown in figure 11, the supply voltage Vdd that sets from initialization period P 1 descends gradually, is converged in data-signal X[j] voltage Vdata and the additive value (Vg=Vdata+Vth_TR) of the threshold voltage vt h_TR of driving transistors Tdr.Write the convergent time span that period P 2 is set at enough grid voltage Vg.In writing period P 2, transistor Tr 2 becomes conducting state, thus the anode voltage of the source voltage of driving transistors Tdr or electrooptic element 11 equal grid voltage Vg (=Vdata+Vth_TR).

In the present embodiment, select data-signal X[j] voltage Vdata, thereby write grid voltage Vg (in other words, the anode voltage of the source electrode of driving transistors Tdr or electrooptic element 11) after the convergence in the period P 2 and become the voltage that makes (stopping to drive) that electrooptic element 11 extinguishes.More specifically, as shown in Figure 9, the scope of decision voltage Vdata (Vdata+Vth_TR≤Vth_EL), thus write grid voltage Vg in the period P 2 (=Vdata+Vth_TR) become the following voltage of threshold voltage vt h_EL.The additive value that is the threshold voltage vt h_TR of the maximal value (the voltage Vdata corresponding with the highest gray scale) of voltage Vdata and driving transistors Tdr becomes the magnitude of voltage that is substantially equal to threshold voltage vt h_EL (higher limit).And the additive value of the threshold voltage vt h_TR of the minimum value of voltage Vdata (promptly corresponding with minimum gray scale voltage Vdata) and driving transistors Tdr becomes and is substantially equal to the magnitude of voltage that writes voltage V0 (lower limit).

Thus, the forward voltage (grid voltage Vg) that is added in writing period P 2 on the electrooptic element 11 is no more than threshold voltage vt h_EL.Therefore, in writing period P 2, as using among Figure 13 shown in the arrow, electric current I O is in order from the first electrode E1 of capacity cell C, flow via the source electrode of transistor Tr 2 and driving transistors Tdr and drain electrode and transistor Tr 1, and shown in Figure 13 " X ", the anode of electrooptic element 11 is after the moment that becomes below the threshold voltage vt h_EL at least, and electric current does not flow to electrooptic element 11.As a result of, at least a portion that writes period P 2, the luminous of electrooptic element 11 stops.

(c) drive period P 3 (Figure 14)

If write period P 2 processes, the first control signal Ya[i] just change low level into, so as shown in figure 14, transistor Tr 2 becomes off-state.Therefore, the diode of driving transistors Tdr connects releasing.At this moment transistor Tr es also becomes conducting state, so the first electrode E1 (the perhaps grid of driving transistors Tdr) of capacity cell C becomes floating state in driving period P 3.In addition, by the low level first control signal Ya[i], transistor Tr 1 becomes off-state, and transistor Tr 3 becomes conducting state.Therefore, the junction of the drain electrode of driving transistors Tdr switches to voltage supply line 17 from data line 15.

As shown in figure 11, in the starting point that drives period P 3, voltage control circuit 27 makes voltage L[i] be changed to supply voltage Vdd from writing voltage V0.Now, the first electrode E1 of capacity cell C becomes floating state, so as Fig. 9 and shown in Figure 11, if be connected the only change " Δ V1=Vdd-V0 " of voltage (be voltage L[i]) of the second electrode E2 on the voltage supply line 17, because the capacitive coupling of capacity cell C, the voltage of the first electrode E1 (being grid voltage Vg) only rise " Δ V1 ".Therefore, as shown in figure 11, the grid voltage Vg in the driving period P 3 converges to the voltage " Δ V1+Vdata+Vth_TR " of beyond supply voltage Vdd.Set the conducting state of driving transistors Tdr thus according to voltage Vdata, thereby in driving period P 3, as shown in figure 14, corresponding with voltage Vdata drive current Ie1 offers electrooptic element 11 from power lead 181 via transistor Tr 3 and driving transistors Tdr.And electrooptic element 11 is luminous according to the brightness corresponding with drive current Ie1.

If supposition driving transistors Tdr is in saturation region operation now, then in driving period P 3, the drive current Ie1 that offers electrooptic element 11 is showed by following expression formula (1).It should be noted that " β " of expression formula (1) is the gain coefficient of driving transistors Tdr, " Vgs " is the voltage between grid-source of driving transistors Tdr.

Ie1＝(β/2)(Vgs-Vth_TR) ²…(1)

In driving period P 3, grid voltage Vg is a benchmark with ground voltage Vss, be converged in " Δ V1+Vdata+Vth_TR ", so the source voltage (being the forward voltage of electrooptic element 11) that drives the driving transistors Tdr in the period P 3 is if be " Von ", then voltage Vgs becomes " Δ V1+Vdata+Vth_TR-Von ".If substitution it, just be deformed into following expression formula " 2 ".It should be noted that voltage " Von " is the voltage according to the characteristic decision of electrooptic element 11.

Ie1＝(β/2)(ΔV1+Vdata-Von) ²…(2)

Be the threshold voltage vt h_TR that drive current Ie1 does not exist with ... driving transistors Tdr.Therefore, according to present embodiment, the skew of the threshold voltage vt h_TR of compensation constituent parts circuit U can make each electrooptic element 11 luminous with desirable brightness with high precision.

As mentioned above, in the present embodiment, what the source electrode of the anode of electrooptic element 11 and driving transistors Tdr and grid were electrically connected writes in the period P 2, the source voltage of driving transistors Tdr (grid voltage Vg) is set at the voltage of the threshold voltage vt h_EL that is lower than electrooptic element 11, in driving period P 3, by making this grid voltage Vg only change setting (Δ V1), thereby drive electrooptic element 11.Therefore, although between driving transistors Tdr and electrooptic element 11, there is not the on-off element of both electrical connections of control, also can be implemented in to write the luminous of electrooptic element 11 stopped, and in driving period P 3, make the luminous difference of electrooptic element 11.

; as each transistor (particularly driving transistors Tdr) that constitutes the constituent parts circuit U, can adopt material to use the so-called thin film transistor (TFT) of polysilicon, microcrystal silicon, monocrystalline silicon or non-crystalline silicon etc. or the transistor that forms by block (bulk) silicon to semiconductor layer.The actual transistor that uses in unit circuit U can suitably be selected according to purposes and the specification of light-emitting device D.

It should be noted that known: use the transistor of amorphous silicon, fixed consistently if flow through its sense of current, then threshold voltage vt h_TR changes in time.According to present embodiment, the electric current I O that in writing period P 2, flows through driving transistors Tdr from source electrode towards drain electrode, and the drive current Ie1 that in driving period P 3, flows through driving transistors Tdr from drain electrode towards source electrode.The sense of current that promptly flows through driving transistors Tdr changes in time, so according to present embodiment, even semiconductor layer can suppress the change of its threshold voltage vt h_TR for adopt the structure of the thin film transistor (TFT) that is made of amorphous silicon in driving transistors Tdr.

(D: embodiment 3)

The following describes the electronic installation D of embodiment of the present invention 3.It should be noted that,, give the symbol public, suitably omit explanation with Fig. 8 about key element same in the present embodiment with embodiment 2.

Figure 15 is the circuit diagram of structure of the unit circuit U of expression present embodiment 3.As shown in figure 15, the conduction type of the driving transistors Tdr of present embodiment is the p channel type.Electrooptic element 11 is connected in the drain electrode (D) of driving transistors Tdr.It should be noted that, same with embodiment 2, each terminal of driving transistors Tdr is changed into the opposing party from a side of source electrode and drain electrode, but in the present embodiment, for convenience of explanation, the terminal of electrooptic element 11 1 sides is called " drain electrode ", the terminal of its opposite side is called " source electrode ".

The transistor Tr 1 of the electrical connection of control unit circuit U and data line 15 is inserted between the drain electrode (therefore, the anode of electrooptic element 11) and data line 15 of driving transistors Tdr.In addition, be used for the transistor Tr 2 that driving transistors Tdr diode connects is inserted between the source electrode (S) and grid of driving transistors Tdr.Supply with ground voltage Vss from voltage control circuit 27 by 182 pairs of constituent parts circuit U of ground wire.Transistor Tr es is inserted between the grid of ground wire 182 and driving transistors Tdr.The structure of other key elements and embodiment 2 are same.

In the present embodiment, same with embodiment 2, by the second control signal Yb[i] in initialization period P 1, transistor Tr es becomes conducting state.In view of the above, grid voltage Vg is initialized as ground voltage Vss (promptly allowing driving transistors Tdr become the voltage of conducting state).Then, in writing period P 2, as shown in figure 16, the voltage L[i of voltage supply line 17] maintain ground voltage Vss, and transistor Tr es and transistor Tr 3 change off-state into, and transistor Tr 1 and transistor Tr 2 become conducting state.Therefore, the drain electrode of driving transistors Tdr and data line 15 are electrically connected by transistor Tr 1, and the source electrode of driving transistors Tdr is connected (diode connection) with grid by transistor Tr 2.In view of the above, grid voltage Vg converges to " Vdata-Vth_TR " in writing period P 2.

In the structure of Figure 15, between driving transistors Tdr and transistor Tr 1, connect the anode of electrooptic element 11, become data-signal X[j so write the anode voltage (drain voltage of driving transistors Tdr) of the electrooptic element 11 in the period P 2] voltage Vdata.Therefore, in the present embodiment, select data-signal X[j] voltage Vdata (Vdata≤Vth_EL), thus be no more than the threshold voltage vt h_EL of electrooptic element 11, in view of the above, the luminous of electrooptic element 11 that writes in the period P 2 stops.More specifically, selecting voltage Vdata, is lower limit thereby be converged in to write voltage V0, with threshold voltage vt h_EL be in the scope of higher limit (V0≤Vdata≤Vth_EL).

And at the starting point that drives period P 3, the voltage L[i of voltage supply line 17] only rise " Δ V2 " from ground voltage Vss, become supply voltage Vdd.By this voltage L[i] rising, grid voltage Vg converges to " Δ V2+Vdata-Vth_TR ".In addition, in driving period P 3, the voltage supply line 17 of service voltage Vdd and the source electrode of driving transistors Tdr are situated between and are electrically connected by transistor Tr 3, so the drive current Ie1 corresponding with grid voltage Vg offers electrooptic element 11 from voltage supply line 17 via driving transistors Tdr.In the present embodiment, also according to the threshold voltage vt h_TR of driving transistors Tdr decision drive current Ie1, so can suppress the brightness difference of the electrooptic element 11 that the skew of the threshold voltage vt h_TR of each driving transistors Tdr causes.

As mentioned above, in the present embodiment, voltage Vdata is set in the scope of the threshold voltage vt h_EL that is no more than electrooptic element 11.Therefore, same with embodiment 2, although be the structure that between driving transistors Tdr and electrooptic element 11, does not have on-off element, also can stop to write the luminous of electrooptic element in the period P 2 reliably.In addition, in the present embodiment, driving transistors Tdr is the p channel type, so compare mobility scale (Δ V2＜Δ V1) that can sup.G voltage Vg with the structure of the embodiment 2 of the driving transistors Tdr that adopts the n channel type.

It should be noted that, if begin electrooptic element 11 is supplied with drive current Ie1, at the voltage L[i of voltage supply line 17] in voltage just takes place descends., as present embodiment, driving transistors Tdr adopts the structure of p channel type, because the capacitive coupling of capacity cell C, the grid voltage Vg of driving transistors Tdr is drop-out voltage L[i only also] sloping portion.Promptly automatically perform the correction that the conducting state of driving transistors Tdr improves (with voltage L[i] decline corresponding, the correction that drive current Ie1 is increased).

(E: variation)

Can increase various distortion to each above mode.If it is represent the mode of concrete distortion, then as described below.It should be noted that, can each following mode of appropriate combination.

(1) variation 1

In

above embodiment

2 or 3, expression is connected the anode of electrooptic element 11 with driving transistors Tdr structure.In this structure, as implement as described in

mode

2 or 3, select voltage Vdata, thus write the electrooptic element 11 in the period P 2 anode voltage (in the embodiment 2, Vdata+Vth_TR, in the embodiment 3, Vdata) be lower than threshold voltage vt h_EL, thereby stop the driving of electrooptic element 11, and in driving period P 3, by making the voltage L[i of voltage supply line 17] rise, drive electrooptic element 11.And as Figure 17 and shown in Figure 180, the negative electrode of electrooptic element 11 is connected on the driving transistors Tdr, and the anode of each electrooptic element 11 is kept supply voltage Vdd.Figure 17 is the mode of the unit circuit U of embodiment 2 distortion, and Figure 18 is the mode of the unit circuit U of embodiment 3 distortion.

In these structures, the anode voltage that writes the electrooptic element 11 in the period P 2 maintains the above voltage of the difference " Vdd-Vth_EL " of supply voltage Vdd and threshold voltage vt h_EL (voltage that promptly allows the driving of electrooptic element 11 stop).For example in the structure of Figure 17, same with embodiment 2, the source voltage of driving transistors Tdr (being the cathode voltage of electrooptic element 11) in writing period P 2 for becoming " Vdata+Vth_TR ", so select data-signal X[j] the scope of voltage Vdata, thereby this voltage " Vdata+Vth_TR " becomes " Vdd-Vth_EL " above (Vdd-Vth_EL≤Vdata+Vth_TR).And in the structure of Figure 18, same with embodiment 3, the drain voltage of driving transistors Tdr in writing period P 2 for becoming " Vdata ", so the scope of decision voltage Vdata, thereby become " Vdd-Vth_EL≤Vdata ".

And in the structure of Figure 17 or Figure 18, after writing period P 2 warps (in the starting point that drives period P 3), voltage control circuit 27 makes the voltage L[i of voltage supply line 17] descend.Because this descends, the cathode voltage of electrooptic element 11 is set at the voltage that is lower than " Vdd-Vth_EL ", and as a result of, electrooptic element 11 is luminous in driving period P 3.As mentioned above, in this variation, also can produce effect and the effect same with described embodiment.

(2) variation 2

The concrete structure of unit circuit U is not limited to above example.For example can suitably change each transistorized conduction type.In addition, in described embodiment, enumerate to be included in writing period P 2, but also can omit transistor Tr es before the structure of the initialized transistor Tr es of grid voltage Vg.In described embodiment, enumerate transistor Tr 1 and transistor Tr 2 and transistor Tr 3 structure, but can adopt respectively structure by different signal controlling by public signal (the first control signal Ya[i]) control.Therefore, transistor Tr 1 can be identical conduction type with transistor Tr 2 and transistor Tr 3.

(3) variation 3

In above-described embodiment, enumerate the scope of selecting voltage Vdata, thus the structure that electrooptic element 11 extinguishes fully in writing period P 2, but in the present invention, might not be to write extinguishing fully in the period P 2.For example in embodiment 2, enumerated the scope of voltage Vdata has been chosen as satisfied " Vdata+Vth_TR≤Vth_EL ", thereby stop to write in the period P 2 structure fully to the current supply of electrooptic element 11, if but the brightness that writes the electrooptic element 11 in the period P 2 becomes unchallenged degree (being the degree that the observer almost can't discern) in the practicality as display device, the anode voltage " Vdata+Vth_TR " (Vdata in the embodiment 3) that then writes electrooptic element 11 in the period P 2 can surpass threshold voltage vt h_EL.Equally, in the structure of Figure 17, the cathode voltage of electrooptic element 11 " Vdata+Vth_TR " (voltage Vdata in the structure of Figure 18) can be lower than " Vdd-Vth_EL " in writing period P 2.In the present invention promptly, write the voltage that in the period P 2 electrooptic element 11 added and its voltage because the change of the voltage of voltage supply line 17 and different through later electrooptic element 11 being added.

(4) variation 4

In above mode, as electrooptic element 11, enumerated the OLED element, but the electrooptic element that adopts in the electronic installation of the present invention is not limited thereto.For example replace the OLED element, can utilize inorganic EL element, field emission (FE) element, surface conduction type emission (SE:Surface-conduction Electron-emitter) element, ballistic electron emission (BS:Ballisticelectron Surface Emitting) element, LED various self-emission devices, liquid crystal cell and electrophoresis elements such as (Light Emitting Diode) and electricity to cause various electrooptic elements such as color display element.In addition, the present invention also can be applied in the sensing devices such as biochip.Driven element of the present invention is the notion that comprises by giving of electric energy whole key elements of controlling (driving), and electrooptic elements such as light-emitting component only are the examples of driven element.

(F: application examples)

The following describes the electronic device that utilizes electronic installation of the present invention.Figure 19 is that expression is the stereographic map of the electronic installation D of the any-mode of above explanation as the structure that moves (portable) formula PC of display device use.PC 2000 has as the electronic installation D of display device and main part 2010.At main part 2010 power switch 2001 and keyboard 2002 are set.Among this electronic installation D, use the OLED element as electrooptic element 11, so can show that field angle is broad, the picture of easy observation.

Figure 20 represents the structure of mobile phone of the electronic installation D of application implementation mode.Mobile phone 3000 has a plurality of action buttons 3001 and scroll button 3002, as the electronic installation D of display device.By operation scroll button 3002, can make picture displayed rolling on electronic installation D.

Figure 21 represents the structure of the portable data assistance (PDA:Personal Digital Assistants) of the electronic installation D of application implementation mode.Portable data assistance 4000 has a plurality of action buttons 4001 and power switch 4002, as the electronic installation D of display device.If operating power switch 4002, various information such as address list and schedule just show on electronic installation D.

It should be noted that, as the electronic device of using electronic installation of the present invention, except the electronic device that Figure 19～Figure 21 represents, can also enumerate digital camera, TV, video camera, automobile navigation apparatus, pager, electronic notebook, Electronic Paper, desk top computer, word processor, workstation, videophone, POS terminal, printer, scanner, duplicating machine, video player, have the instrument of touch-screen etc.In addition, the purposes of electronic installation of the present invention is not limited to the demonstration of image.For example write in the image processing systems such as the printer of type and electronic copier at light, use according to the image that should form on recording materials such as paper the write head of photoreceptor exposure, but, also can utilize electronic installation of the present invention as this write head.Unit circuit of the present invention is the circuit (so-called image element circuit) that constitutes the pixel of display device except embodiment is such as described, also comprises the circuit that becomes langley in the image processing system.

Claims

1. the driving method of an electronic installation, this electronic installation possesses unit circuit, this unit circuit comprises: have control terminal and the first terminal and second terminal, and make the driving transistors of the conducting state variation between described the first terminal and described second terminal according to the current potential of described control terminal; With the driven element that drives according to the conducting state of described driving transistors,

During initialization the current potential supply line is supplied with first current potential, be electrically connected the described control terminal of described current potential supply line and described driving transistors in during described initialization;

During described initialization, in during the writing later, be electrically connected the data line of supplying with data-signal and the described the first terminal of described driving transistors;

During the driving during said write after the warp, described current potential supply line is supplied with second current potential different with described first current potential, be electrically connected described second terminal of described current potential supply line and described driving transistors in during described driving, thereby drive described driven element.

2. electronic installation,

Comprise:

Many first wirings;

With described many first many second wirings that wiring intersects;

Many current potential supply lines;

With described many first wirings and described many second a plurality of unit circuits that intersect corresponding configuration that connect up;

Select the selection circuit of many first wirings respectively;

During respectively writing, described many second wirings are supplied with the data supply circuit of data-signal respectively; And

Described many current potential supply lines are set at the voltage control circuit of a plurality of current potentials respectively;

Each of described a plurality of unit circuits comprises:

Driving transistors has control terminal and the first terminal and second terminal, and according to the current potential of described control terminal the conducting state of described the first terminal and described second terminal is changed;

Driven element is according to the conducting state driving of described driving transistors;

The described the first terminal and described second that is electrically connected described driving transistors in during first on-off element, the writing of one first wiring in selecting described many first wirings connects up; And

The potential setting parts, be electrically connected the current potential supply line in described many current potential supply lines and the described control terminal of described driving transistors in during the initialization during said write before the beginning, during said write through after described driving during in described second terminal of the described current potential supply line of electrical connection and described driving transistors.

3. electronic installation according to claim 2, wherein:

Described voltage control circuit during described initialization in, with the potential setting of a described current potential supply line is first current potential, during said write, in during the driving later, be second current potential different with described first current potential with the potential setting of a described current potential supply line.

4. electronic installation according to claim 2, wherein:

Each of described a plurality of unit circuits comprises capacity cell, its have on the described control terminal that is connected described driving transistors first electrode and at least during described driving in maintain second electrode of set potential.

5. electronic installation according to claim 4, wherein:

Described second electrode of described capacity cell is connected in different first wirings with described one first wiring in described many first wirings.

6. electronic installation according to claim 5, wherein:

Described second electrode of described capacity cell be connected in described many first wirings in described one first wiring before being right after in selected other first wirings.

7. electronic installation according to claim 2, wherein:

Described potential setting parts comprise the second switch element, its during described initialization in and during the described driving in described second terminal of electrical connection a described current potential supply line and described driving transistors, and described second terminal of the described current potential supply line of electrical isolation and described driving transistors in during said write.

8. electronic installation according to claim 7, wherein:

Described potential setting parts comprise the 3rd on-off element, its during described initialization in and during the said write in the described the first terminal and the described control terminal of the described driving transistors of electrical connection, and the described the first terminal and the described control terminal of the described driving transistors of electrical isolation in during described driving.

9. electronic installation according to claim 2, wherein:

Each of described a plurality of unit circuits comprises the described the first terminal of controlling described driving transistors and the 4th on-off element of the electrical connection between the described driven element.

10. electronic installation according to claim 9, wherein:

Described first on-off element is 2 different transistors of mutual conduction type with described the 4th on-off element, described 2 transistorized grids and described one first public connection of wiring.

11. electronic installation according to claim 2, wherein:

Described first current potential is that to make described driving transistors be the current potential of conducting state.

12. electronic installation according to claim 2, wherein:

Described many current potential supply lines intersect with described many second wirings.

13. an electronic device comprises any described electronic installation in the claim 2～11.

14. an electro-optical device,

Comprise:

The multi-strip scanning line;

Many data lines that intersect with described multi-strip scanning line;

Many current potential supply lines;

A plurality of unit circuits of corresponding configuration with intersecting of described multi-strip scanning line and described many data lines;

Select the scan line drive circuit of described multi-strip scanning line respectively;

During respectively writing described many data lines are supplied with the data line drive circuit of data-signal; And

Each of described a plurality of unit circuits comprises:

Electrooptic element is according to the conducting state driving of described driving transistors;

The described the first terminal and the described data line of the described driving transistors of electrical connection in during first on-off element, the writing an of sweep trace in selecting described multi-strip scanning line; And

The potential setting parts, be electrically connected the current potential supply line in described many current potential supply lines and the described control terminal of described driving transistors in during the initialization during this writes before the beginning, and during said write through after described driving during in described second terminal of the described current potential supply line of electrical connection and described driving transistors.

15. the driving method of an electronic installation, this electronic installation possesses unit circuit, this unit circuit comprises: have control terminal and the first terminal and second terminal, and make the driving transistors of the conducting state variation between described the first terminal and described second terminal according to the voltage of described control terminal; With the driven element that drives according to the conducting state of described driving transistors,

During writing signal wire is supplied with data voltage, and be electrically connected a side and described signal wire in described the first terminal and described second terminal, thereby the opposing party who is situated between by described the first terminal and described second terminal supplies with data voltage to described control terminal;

After warp during the said write, make the voltage of described control terminal only change ormal weight, thereby set the conducting state of described driving transistors.

16. the driving method of electronic installation according to claim 15, wherein:

Described unit circuit comprises capacity cell, and it has and is connected first electrode on the described control terminal and is connected second electrode on the voltage supply line;

In at least a portion during said write, the voltage of described voltage supply line is set at first voltage level;

After warp during the said write, make the change in voltage of described voltage supply line be second voltage level different, thereby make the change in voltage of described control terminal with described first voltage level.

17. an electronic installation,

Comprise:

Signal wire;

Voltage supply line;

The data supply circuit is supplied with data voltage to described signal wire in during writing;

Voltage control circuit, in at least a portion during said write, the voltage of described voltage supply line is set at first voltage level, and after warp during the said write, makes the change in voltage of described voltage supply line be second voltage level different with described first voltage level; And

Unit circuit;

Described unit circuit comprises:

Driving transistors has control terminal and the first terminal and second terminal, and according to the voltage of described control terminal the conducting state between described the first terminal and described second terminal is changed;

The voltage set parts, be electrically connected a side and described signal wire in described the first terminal and described second terminal at least a portion during said write, thereby be situated between by the opposing party of described the first terminal and described second terminal, described control terminal is supplied with data voltage; And

Capacity cell has first electrode that is connected on the described control terminal and second electrode that is connected on the described voltage supply line.

18. electronic installation according to claim 17, wherein:

Between described driving transistors and described driven element, there is not on-off element.

19. electronic installation according to claim 17, wherein:

Described first electrode warp during said write becomes floating state later.

20. electronic installation according to claim 17, wherein:

If the voltage level of described the first terminal surpasses prescribed voltage level, just drive described driven element;

Described second voltage level is also higher than described first voltage level.

21. electronic installation according to claim 20, wherein:

If the voltage level of described the first terminal surpasses the threshold voltage of described driven element, just drive described driven element;

Described voltage set parts comprises first on-off element, is electrically connected described second terminal and described signal wire in its at least a portion during said write;

The additive value of the threshold voltage of described data voltage and described driving transistors is lower than the threshold voltage of described driven element.

22. electronic installation according to claim 20, wherein:

If the voltage of described the first terminal surpasses the threshold voltage of described driven element, just drive described driven element;

Described voltage set parts comprises first on-off element, is electrically connected described the first terminal and described signal wire in its at least a portion during said write;

Data voltage is lower than the threshold voltage of described driven element.

23. electronic installation according to claim 17, wherein:

Comprise: first on-off element, it controls being electrically connected of a side and described signal wire in described the first terminal and described second terminal; With the second switch element, it controls being electrically connected of the opposing party and described control terminal in described the first terminal and described second terminal,

Described first on-off element and described second switch element are by single wiring signal supplied is controlled.

24. electronic installation according to claim 23, wherein:

Described driven element is connected on the described the first terminal of described driving transistors;

Described voltage set parts comprises the 3rd on-off element, and its warp during said write is electrically connected supply lines and described second terminal that voltage is set at the assigned voltage level later,

Described first on-off element, described second switch element and described the 3rd on-off element are by single wiring signal supplied is controlled.

25. electronic installation according to claim 17, wherein:

Described unit circuit comprises reset components, and it is set at prescribed voltage level with the voltage of described control terminal before during the said write.

26. electronic installation according to claim 17, wherein:

If the voltage level of described the first terminal is lower than prescribed voltage level, just drive described driven element;

Described first voltage of described second voltage ratio is also low.

27. electronic installation according to claim 17, wherein:

Described voltage supply line intersects with described signal wire.

28. an electronic device comprises any described electronic installation in the claim 17～27.

29. an electro-optical device,

Comprise:

Data line;

Voltage supply line;

Data line drive circuit is supplied with data voltage to described data line in during writing;

Unit circuit;

Described unit circuit comprises:

The voltage set parts, be electrically connected a side and described data line in described the first terminal and described second terminal at least a portion during said write, by the opposing party in described the first terminal and described second terminal described control terminal supplied with data voltage thereby be situated between; And