CN1872662A - Nano line cluster of titanium silicide prepared by chemical vapor deposition under normal pressure, and preparation method - Google Patents
Nano line cluster of titanium silicide prepared by chemical vapor deposition under normal pressure, and preparation method Download PDFInfo
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- CN1872662A CN1872662A CN 200610050486 CN200610050486A CN1872662A CN 1872662 A CN1872662 A CN 1872662A CN 200610050486 CN200610050486 CN 200610050486 CN 200610050486 A CN200610050486 A CN 200610050486A CN 1872662 A CN1872662 A CN 1872662A
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- nano line
- line cluster
- ticl
- nano
- titanium silicide
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- 229910021341 titanium silicide Inorganic materials 0.000 title claims abstract description 23
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract 3
- 238000002360 preparation method Methods 0.000 title claims description 29
- 239000002070 nanowire Substances 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 36
- 239000011521 glass Substances 0.000 claims abstract description 14
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 14
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910008484 TiSi Inorganic materials 0.000 claims description 33
- 239000007789 gas Substances 0.000 claims description 26
- 239000010936 titanium Substances 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 19
- 239000012495 reaction gas Substances 0.000 claims description 18
- 238000009413 insulation Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 239000000376 reactant Substances 0.000 claims description 3
- 239000002912 waste gas Substances 0.000 claims description 3
- 239000003085 diluting agent Substances 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims description 2
- 239000002243 precursor Substances 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 230000035484 reaction time Effects 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 229910003074 TiCl4 Inorganic materials 0.000 abstract 1
- 238000007865 diluting Methods 0.000 abstract 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 abstract 1
- 230000001143 conditioned effect Effects 0.000 description 16
- 238000004062 sedimentation Methods 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000002003 electron diffraction Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
Abstract
A titanium silicide nanowire cluster prepared by ordinary-pressure CVD method features that multiple nanowires are parallelly grown on one end segment of a nanowire. Its preparing process includes such steps as providing SiH4, TiCl4 and N2 as diluting and protecting gas, generating metallic silicide film layer on glass substrate, and generating high-density silicide nanowire clusters.
Description
Technical field
The present invention relates to the technology of preparing of nano line cluster of titanium silicide, especially relate to nano line cluster of titanium silicide of a kind of aumospheric pressure cvd method preparation and preparation method thereof.
Background technology
Along with the development of microelectric technique, the preparation of nano wire has in recent years caused extensive attention, and nano wire has a wide range of applications as the basic module in nanoelectronic and the optoelectronic fabrication techniques.The application of nano material in semiconductor technology can obtain higher device density, and this is that conventional semiconductor technology is incomparable.But nano wire is because its too small size makes itself and being connected with contacting of other material produce difficulty.And nano line cluster can obtain the high device density of nano material, can produce good connection and contact again.Nano line cluster is the set of nano wire, can obtain higher device density, and forms arrayed naturally, has good field emission property easily to produce good connection and contact.Therefore, nano line cluster had both kept the advantage of nano wire, had overcome the shortcoming of nano wire again, was with a wide range of applications.
Metal silicide is widely used in modern semiconductor technology in the middle of the manufacturing of the door, source/drain electrode of metal-oxide semiconductor (MOS) (MOS) device, mos field effect transistor (MOSFET), dynamic RAM (DRAM) among the ULSI and interconnected, Ohmic contact.Along with constantly reducing of device size in microelectric technique, the metal silicide nano-wire of many one dimension sizes has prepared.He etc. have prepared CoSi
2Nano wire, Chen etc. have prepared ErSi
2Nano wire, Lee etc. have been prepared the NiSi nano wire, and Luo etc. have prepared Pt
6Si
5Nano wire, Ragana etc. have been prepared extension rare metal silicide nano wire, but the preparation of metal silicide nano-wire bunch do not appear in the newspapers, and above-mentioned these nano wires all form by physical gas-phase deposite method, mainly are sputtering methods.This method yields poorly to the requirement height of equipment.
Summary of the invention
For overcoming the shortcoming that physical gas-phase deposite method prepares metal silicide nano-wire, the object of the present invention is to provide nano line cluster of titanium silicide of a kind of aumospheric pressure cvd method (APCVD) preparation and preparation method thereof.The present invention has successfully prepared nano line cluster of titanium silicide by APCVD, this is a kind of completely new approach of growing metal silicide nano line cluster, this method both can be applicable to the preparation of various metal silicide nano-wires bunch, can be used for the preparation of various inorganic compound nano line clusters again.
The technical solution adopted for the present invention to solve the technical problems is as follows:
One, the nano line cluster of titanium silicide of aumospheric pressure cvd method preparation constitutes nano line cluster at the parallel many nano wires of growing of the head of single nano-wire one end.
Described nano line cluster is the set of many monocrystal nanowires, and the nano line cluster material is TiSi, Ti
5Si
3, TiSi
2
Described nano line cluster is 4～8 nano wires parallel to each other, and diameter is 10～20nm, long 0.1～2 μ m; Single nano-wire, its diameter are 20～50nm, and length is 0.3～5 μ m.
Two, the preparation method of the nano line cluster of titanium silicide of aumospheric pressure cvd method preparation, the step of this method is as follows:
1) reactant precursor is SiH
4And TiCl
4, with N
2Be diluent gas and protective atmosphere;
2) TiCl
4Constant temperature is at 30～60 ℃; TiCl
4Pipeline heat insulation to 40～70 ℃ of process;
3) by gas generator, use N
2Carry TiCl
4
4) SiH
4, TiCl
4And N
2Mix at mixing chamber; Each road gas equates that at the pressure of mixing chamber porch pressure remains between 111325～141325Pa;
5) molar concentration of each material in the overall reaction gas:
a)SiH
4：0.33～5％；
b)TiCl
4：0.33～1.67％；
C) SiH
4With TiCl
4Mol ratio: 1～3: 1;
6) depositing system pressure maintains between 81325～121325Pa;
7) the glass substrate temperature is between 690～750 ℃, mixed gas delivery is reacted to glass substrate, reaction time is 2～30 minutes, generate titanium silicide film layer and titanium silicide nano line earlier, pass through the method for the concentration of increase reacting gas then, on this metal silicide rete, form highdensity silicide nano line cluster;
8) waste gas is handled the back discharging through absorbing.
Described rete is Ti
5Si
3, TiSi
2Or Ti
5Si
3With TiSi
2Compound.
In view of this invention purpose is that reactant must be easily gasification, because could obtain big mass transfer ability under big vapour pressure with the quick and large-area nano line cluster of titanium silicide preparation of APCVD process implementing.SiH involved in the present invention
4-TiCl
4-N
2System APCVD can meet above-mentioned requirements fully as the basic technology route.
The present invention compares the beneficial effect that has with background technology:
1, be equipped with metal silicide nano-wire bunch with the APCVD legal system, this method is low for equipment requirements, but output is big, the efficient height.And existing physical gas-phase deposite method is not also prepared metal silicide nano-wire bunch;
2, this method is not used template and catalyst, fast a large amount of generations the nano line cluster of titanium silicide of monocrystalline;
3, by preparation condition is changed, can obtain the nano line cluster of various patterns;
4,, can obtain the nano line cluster of various chemical compositions by change to preparation feedback thing mol ratio.
Description of drawings
The structural principle schematic diagram of Fig. 1 nano line cluster of the present invention;
Fig. 2 nano line cluster growth of the present invention schematic diagram;
The transmission electron microscope figure and the electron diffraction diagram of the TiSi nano line cluster sample head of Fig. 3 preparation;
The scanning electron microscope diagram of the TiSi nano line cluster sample of Fig. 4 preparation;
The Ti of Fig. 5 preparation
5Si
3The transmission electron microscope figure and the electron diffraction diagram of nano line cluster;
The Ti of Fig. 6 preparation
5Si
3The transmission electron microscope figure and the electron diffraction diagram of nano line cluster;
The head high resolution transmission electron microscopy figure of the TiSi nano line cluster of Fig. 7 preparation.
Among the figure: 1, nano line cluster, 2, single nano-wire, 3, common glass substrates, 4, the titanium silicide rete, 5 nano line cluster of titanium silicide.
The specific embodiment
As shown in Figure 1, the present invention holds the row many nano wires of growing level with both hands at one of the head of single nano-wire 2 and constitutes nano line clusters 1.
Described nano line cluster 1 is the set of many monocrystal nanowires, and nano line cluster 1 material is TiSi, Ti
5Si
3, TiSi
2
Described nano line cluster 1 is 4～8 nano wires parallel to each other, and diameter is 10～20nm, long 0.1～2 μ m; Single nano-wire 2, its diameter are 20～50nm, and length is 0.3～5 μ m.
As shown in Figure 2, on common glass substrates 3, deposition one deck rete 4 forms nano line cluster of titanium silicide 5 then on this rete 4 earlier.
Described rete is Ti
5Si
3, TiSi
2Or Ti
5Si
3With TiSi
2Compound.
Be specific embodiments of the invention below:
Embodiment 1:
690 ℃ of reaction temperatures, TiCl
4Constant temperature is at 60 ℃, TiCl
4The pipeline heat insulation to 70 ℃ of process, conditioned reaction gas SiH
4With TiCl
4Mol ratio is 1: 1, SiH
4: 1.67%, TiCl
4: 1.67%, N
2: 96.66%, the pressure of each road gas in the mixing chamber porch is 111325Pa, depositing system pressure maintains 81325Pa, sedimentation time 2 minutes.Then, conditioned reaction gas concentration, wherein SiH
4: 2.5%, TiCl
4: 2.5%, N
2: 95%, the pressure of each road gas in the mixing chamber porch is 111325Pa, depositing system pressure maintains 81325Pa, sedimentation time 2 minutes.On glass substrate, form Ti
5Si
3Film and TiSi nano line cluster.Discharge after waste gas process dilute sodium hydroxide and the watery hydrochloric acid conventional treatment.The results are shown in subordinate list and Fig. 3.
Embodiment 2:
690 ℃ of reaction temperatures, TiCl
4Constant temperature is at 40 ℃, TiCl
4The pipeline heat insulation to 50 ℃ of process, conditioned reaction gas SiH
4With TiCl
4Mol ratio is 1: 1, SiH
4: 1%, TiCl
4: 1%, N
2: 98%, the pressure of each road gas in the mixing chamber porch is 111325Pa, depositing system pressure maintains 91325Pa, sedimentation time 3 minutes.Then, conditioned reaction gas concentration, wherein SiH
4: 2%, TiCl
4: 2%, N
2: 96%, the pressure of each road gas in the mixing chamber porch is 111325Pa, depositing system pressure maintains 91325Pa, sedimentation time 3 minutes.On glass substrate, form Ti
5Si
3Film and TiSi nano line cluster.The results are shown in subordinate list.
Embodiment 3:
690 ℃ of reaction temperatures, TiCl
4Constant temperature is at 30 ℃, TiCl
4The pipeline heat insulation to 40 ℃ of process, conditioned reaction gas SiH
4With TiCl
4Mol ratio is 1: 1, SiH
4: 1%, TiCl
4: 1%, N
2: 98%, the pressure of each road gas in the mixing chamber porch is 111325Pa, depositing system pressure maintains 101325Pa, sedimentation time 10 minutes.Then, conditioned reaction gas concentration, wherein SiH
4: 1.67%, TiCl
4: 1.67%, N
2: 96.66%, the pressure of each road gas in the mixing chamber porch is 111325Pa, depositing system pressure maintains 101325Pa, sedimentation time 20 minutes.On glass substrate, form Ti
5Si
3Film and TiSi nano line cluster.The results are shown in subordinate list and Fig. 4.
Embodiment 4:
700 ℃ of reaction temperatures, TiCl
4Constant temperature is at 40 ℃, TiCl
4The pipeline heat insulation to 50 ℃ of process, conditioned reaction gas SiH
4With TiCl
4Mol ratio is 2: 1, SiH
4: 1%, TiCl
4: 0.5%, N
2: 98.5%, the pressure of each road gas in the mixing chamber porch is 121325Pa, depositing system pressure maintains 115000Pa, sedimentation time 10 minutes.Then, conditioned reaction gas concentration, wherein SiH
4: 2%, TiCl
4: 1%, N
2: 97%, the pressure of each road gas in the mixing chamber porch is 121325Pa, depositing system pressure maintains 115000Pa, sedimentation time 5 minutes.On glass substrate, form Ti
5Si
3Film and Ti
5Si
3Nano line cluster.The results are shown in subordinate list and Fig. 5.
Embodiment 5:
700 ℃ of reaction temperatures, TiCl
4Constant temperature is at 60 ℃, TiCl
4The pipeline heat insulation to 70 ℃ of process, conditioned reaction gas SiH
4With TiCl
4Mol ratio is 3: 1, SiH
4: 1.5%, TiCl
4: 0.5%, N
2: 98%, the pressure of each road gas in the mixing chamber porch is 141325Pa, depositing system pressure maintains 121325Pa, deposits 1 minute.Then, conditioned reaction gas concentration, wherein SiH
4: 5%, TiCl
4: 1.67%, N
2: 93.33%, the pressure of each road gas in the mixing chamber porch is 141325Pa, and depositing system pressure maintains 121325Pa, and sedimentation time 1 minute forms TiSi on glass substrate
2Film and TiSi
2Nano line cluster.The results are shown in subordinate list.
Embodiment 6:
690 ℃ of reaction temperatures, TiCl
4Constant temperature is at 40 ℃, TiCl
4The pipeline heat insulation to 50 ℃ of process, conditioned reaction gas SiH
4With TiCl
4Mol ratio is 3: 1, SiH
4: 1.5%, TiCl
4: 1.5%, N
2: 97%, sedimentation time 1 minute, the pressure of each road gas in the mixing chamber porch is 131325Pa, depositing system pressure maintains 111325Pa.On glass substrate, form TiSi
2Film.Then, conditioned reaction gas SiH
4With TiCl
4Mol ratio is 1: 1, SiH
4: 1%, TiCl
4: 1%, N
2: 98%, sedimentation time 2 minutes, the pressure of each road gas in the mixing chamber porch is 131325Pa, depositing system pressure maintains 111325Pa.At last, conditioned reaction gas concentration, wherein SiH
4: 4.5%, TiCl
4: 1.5%, N
2: 94%, sedimentation time 5 minutes, the pressure of each road gas in the mixing chamber porch is 131325Pa, depositing system pressure maintains 111325Pa.At TiSi
2Form the TiSi nano line cluster on the film.The results are shown in subordinate list and Fig. 6.
Embodiment 7:
750 ℃ of reaction temperatures, TiCl
4Constant temperature is at 40 ℃, TiCl
4The pipeline heat insulation to 50 ℃ of process, conditioned reaction gas SiH
4With TiCl
4Mol ratio is 1: 1, SiH
4: 1.67%, TiCl
4: 1.67%, N
2: 96.66%, about 1 minute of sedimentation time, the pressure of each road gas in the mixing chamber porch is 131325Pa, depositing system pressure maintains 121325Pa.On glass substrate, form Ti
5Si
3Film.Then, conditioned reaction gas SiH
4With TiCl
4Mol ratio is 3: 1, SiH
4: 3%, TiCl
4: 1%, N
2: 96%, sedimentation time 2 minutes, the pressure of each road gas in the mixing chamber porch is 131325Pa, depositing system pressure maintains 121325Pa.At last, conditioned reaction gas concentration, wherein SiH
4: 5%, TiCl
4: 1.67%, N
2: 93.33%, sedimentation time 5 minutes, the pressure of each road gas in the mixing chamber porch is 131325Pa, depositing system pressure maintains 121325Pa.At Ti
5Si
3Form TiSi on the film
2Nano line cluster.The results are shown in subordinate list and Fig. 7.
Test result
The sign of subordinate list nano line cluster
| Example | Crystalline phase in the film | The chemical composition of nano line cluster | Nano line cluster atomic ratio Ti: Si | The nano wire of line bunch head (1) | Nano line cluster body (2) | ||
| Diameter (nm) | Length (μ m) | Diameter (nm) | Length (μ m) | ||||
| Example one | Ti 5Si 3 | TiSi | 1∶1.1 | 10 | 0.1～0.2 | 20～30 | 0.3～0.5 |
| Example two | Ti 5Si 3 | TiSi | 1∶1.12 | 10 | 0.15～0.2 | 20～30 | 2～3 |
| Example three | Ti 5Si 3 | TiSi | 1∶1.08 | 10 | 0.1 | 20～50 | 3～5 |
| Example four | Ti 5Si 3，TiSi 2 | Ti 5Si 3 | 1∶0.65 | 20 | 0.1～0.2 | 40 | 1 |
| Example five | TiSi 2 | TiSi 2 | 1∶2.1 | 10 | 0.1～0.2 | 30 | 0.3～0.5 |
| Example six | TiSi 2 | TiSi | 1∶1.2 | 20 | 1～2 | 20～40 | 1～2 |
| Example seven | Ti 5Si 3 | TiSi 2 | 1∶2.2 | 10 | 0.1～0.2 | 20～40 | 0.4～0.8 |
Crystalline phase is tested with X-ray diffractometer in the film.
The chemical composition of nano line cluster is by X-ray diffractometer and electronic diffraction test
The diameter of nano line cluster and length are by SEM and transmission electron microscope test.
Contained element and ratio thereof are tested by the X ray energy dispersive spectrometry.
Claims (5)
1, a kind of nano line cluster of titanium silicide of aumospheric pressure cvd method preparation is characterized in that: constitute nano line cluster (1) at the parallel many nano wires of growing of the head of single nano-wire (2) one ends.
2, according to the nano line cluster of titanium silicide of claim 1 an aumospheric pressure cvd method preparation, it is characterized in that: described nano line cluster (1) is the set of many monocrystal nanowires, and nano line cluster (1) material is TiSi, Ti
5Si
3, TiSi
2
3, the nano line cluster of titanium silicide of a kind of chemical vapour deposition technique preparation according to claim 2, it is characterized in that: described nano line cluster (1) is 4～8 nano wires parallel to each other, and diameter is 10～20nm, long 0.1～2 μ m; Single nano-wire (2), its diameter are 20～50nm, and length is 0.3～5 μ m.
4, a kind of preparation method of nano line cluster of titanium silicide of aumospheric pressure cvd method preparation is characterized in that the step of this method is as follows:
1) reactant precursor is SiH
4And TiCl
4, with N
2Be diluent gas and protective atmosphere;
2) TiCl
4Constant temperature is at 30～60 ℃; TiCl
4Pipeline heat insulation to 40～70 ℃ of process;
3) by gas generator, use N
2Carry TiCl
4
4) SiH
4, TiCl
4And N
2Mix at mixing chamber; Each road gas equates that at the pressure of mixing chamber porch pressure remains between 111325～141325Pa;
5) molar concentration of each material in the overall reaction gas:
a)SiH
4：0.33～5％；
b)TiCl
4：0.33～1.67％；
C) SiH
4With TiCl
4Mol ratio: 1～3: 1;
6) depositing system pressure maintains between 81325～121325Pa;
7) the glass substrate temperature is between 690～750 ℃, mixed gas delivery is reacted to glass substrate, and the reaction time is 2～30 minutes, generates titanium silicide film layer and titanium silicide nano line earlier, pass through the method for the concentration of increase reacting gas then, on this rete, form the silicide nano line cluster;
8) waste gas is handled the back discharging through absorbing.
5, the preparation method of the nano line cluster of titanium silicide of a kind of aumospheric pressure cvd method preparation according to claim 4, it is characterized in that: described rete is Ti
5Si
3, TiSi
2Or Ti
5Si
3With TiSi
2Compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610050486A CN1872662B (en) | 2006-04-24 | 2006-04-24 | Nano line cluster of titanium silicide prepared by chemical vapor deposition under normal pressure, and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610050486A CN1872662B (en) | 2006-04-24 | 2006-04-24 | Nano line cluster of titanium silicide prepared by chemical vapor deposition under normal pressure, and preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1872662A true CN1872662A (en) | 2006-12-06 |
| CN1872662B CN1872662B (en) | 2010-05-12 |
Family
ID=37483293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200610050486A Expired - Fee Related CN1872662B (en) | 2006-04-24 | 2006-04-24 | Nano line cluster of titanium silicide prepared by chemical vapor deposition under normal pressure, and preparation method |
Country Status (1)
| Country | Link |
|---|---|
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101252042B (en) * | 2008-03-07 | 2010-06-23 | 浙江大学 | Nanometer line bottom electrode and dielectric medium composite film of capacitor and preparing method thereof |
| EP2324487A1 (en) * | 2008-08-25 | 2011-05-25 | Trustees of Boston College | Methods of fabricating complex two-dimensional conductive silicides |
| US8216436B2 (en) | 2008-08-25 | 2012-07-10 | The Trustees Of Boston College | Hetero-nanostructures for solar energy conversions and methods of fabricating same |
| CN103160921A (en) * | 2012-10-25 | 2013-06-19 | 南昌大学 | Preparation method of silicon-doped titanium oxide nanowires with super-hydrophilic performance |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5856237A (en) * | 1997-10-20 | 1999-01-05 | Industrial Technology Research Institute | Insitu formation of TiSi2/TiN bi-layer structures using self-aligned nitridation treatment on underlying CVD-TiSi2 layer |
| CN1294098C (en) * | 2005-05-25 | 2007-01-10 | 浙江大学 | Titanium silicide coated glass with compound functions prepared by nitrogen protection under normal pressure and preparation method thereof |
-
2006
- 2006-04-24 CN CN200610050486A patent/CN1872662B/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101252042B (en) * | 2008-03-07 | 2010-06-23 | 浙江大学 | Nanometer line bottom electrode and dielectric medium composite film of capacitor and preparing method thereof |
| EP2324487A1 (en) * | 2008-08-25 | 2011-05-25 | Trustees of Boston College | Methods of fabricating complex two-dimensional conductive silicides |
| US8158254B2 (en) | 2008-08-25 | 2012-04-17 | The Trustees Of Boston College | Methods of fabricating complex two-dimensional conductive silicides |
| US8216436B2 (en) | 2008-08-25 | 2012-07-10 | The Trustees Of Boston College | Hetero-nanostructures for solar energy conversions and methods of fabricating same |
| EP2324487A4 (en) * | 2008-08-25 | 2014-07-02 | Trustees Boston College | Methods of fabricating complex two-dimensional conductive silicides |
| CN103160921A (en) * | 2012-10-25 | 2013-06-19 | 南昌大学 | Preparation method of silicon-doped titanium oxide nanowires with super-hydrophilic performance |
| CN103160921B (en) * | 2012-10-25 | 2015-10-28 | 南昌大学 | A kind of method preparing the silicon doping titanium oxide nano wire of super hydrophilicity |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1872662B (en) | 2010-05-12 |
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