CN1870277A - Matrix substrate of active device - Google Patents
Matrix substrate of active device Download PDFInfo
- Publication number
- CN1870277A CN1870277A CN 200610087885 CN200610087885A CN1870277A CN 1870277 A CN1870277 A CN 1870277A CN 200610087885 CN200610087885 CN 200610087885 CN 200610087885 A CN200610087885 A CN 200610087885A CN 1870277 A CN1870277 A CN 1870277A
- Authority
- CN
- China
- Prior art keywords
- active device
- matrix substrate
- pixel
- those
- sub
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011159 matrix material Substances 0.000 title claims abstract description 115
- 239000000758 substrate Substances 0.000 title claims description 134
- 238000009826 distribution Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 230000005611 electricity Effects 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 description 24
- 239000010408 film Substances 0.000 description 23
- 230000012447 hatching Effects 0.000 description 20
- 238000000034 method Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 230000008901 benefit Effects 0.000 description 7
- 239000003086 colorant Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000007306 turnover Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 208000020564 Eye injury Diseases 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
A matrix base plate of active device is prepared as setting scan wiring and data wiring on base plate to define out multiple triangle-arranged pixel region, configuring sub pixel unit corresponding to pixel region on base plate and connecting them to scan wiring and data wiring in electricity way, configuring two data wirings between pixel regions corresponding to any two adjacent sub pixel units at the same side as the same scan wirings being electric-connected and setting active device and pixel electrode on each sub pixel unit.
Description
Technical field
The present invention relates to a kind of matrix substrate of active device, and be particularly related to a kind of matrix substrate of active device that can improve the display quality of display panels.
Background technology
In order to cooperate modern life pattern, it is frivolous that the volume of video or image device day by day is tending towards.Though traditional cathode ray tube (cathode ray tube; CRT) display still has its advantage, but because the structure in its internal electron chamber, make the volume of cathode-ray tube display seem huge and take up space, and in the cathode-ray tube display output image, can produce radiation, cause problems such as eye injury.Therefore, flat-panel monitor (the flat paneldisplay that cooperates photoelectric technology and semiconductor fabrication to be developed; FPD), LCD for example becomes the main flow of display product gradually.
Figure 1A illustrates a kind of top view of conventional film transistor matrix substrate, and Figure 1B illustrates film transistor matrix substrate among Figure 1A along the generalized section of hatching a-b.Please be simultaneously with reference to Figure 1A and Figure 1B, conventional film transistor matrix substrate 100 comprises a glass substrate 110, plurality of scanning wirings 120, many data wirings 130 and a plurality of sub-pixel unit 140.Wherein, scan wiring 120, data wiring 130 and sub-pixel unit 140 all are disposed on the substrate 110.Sub-pixel unit 140 is electrical connected with corresponding scan wiring 120 and data wiring 130, and each sub-pixel unit 140 comprises a thin-film transistor 142 and a transparency conductive electrode (indium tin oxide (indium tin oxide for example; ITO)) 144.Thin-film transistor 142 is electrical connected with corresponding scan wiring 120 and data wiring 130, and 144 of transparency conductive electrodes are electrical connected with thin-film transistor 142.
It should be noted that, when film transistor matrix substrate 100 and a colored optical filtering substrates (not illustrating) to group, and inject liquid crystal (not illustrating) with after forming a display panels (not illustrating), in the same row of film transistor matrix substrate 100, any three adjacent subpixels unit 140 are in regular turn corresponding to the colored filter film of the different colours on the colored optical filtering substrates.Lift row, these three adjacent subpixels unit 140 are respectively in regular turn corresponding to the colored filter film of red R, green G, blue B.When display panels display frame, the light that passes these three sub-pixel unit 140 can pass through liquid crystal earlier, and then filters through the colored filter film of different colours, to form ruddiness, green glow, blue light.The light of these three kinds of colors can the decision color that the user saw after colour mixture.
Traditional display panels, the mode of the vertical bar shape commonly used of the color in the colored filter film (not illustrating) of sub-pixel unit 140 correspondences is arranged, as shown in Figure 1A, this kind arrangement mode spatial resolution (spatial resolution) in the horizontal direction is lower.Because the color of the sub-pixel unit 140 pairing colored filter film of same delegation (vertical direction) is identical, and in same row (horizontal direction) sub-pixel unit 140, the sub-pixel unit 140 of corresponding same color (for example being red, green or blue) is to repeat in the cycle to be provided with the spacing length of 3 sub-pixel unit 140, therefore causes lines to fold line (Moirestripes) easily.In addition, when showing complete white picture, blue craspedodrome pixel cell 140 is serially connected, and can make that color seems can be special black, this be with human eye in optical receiver more insensitive relevant to blueness.
Fig. 2 A illustrates the top view of conventional a kind of film transistor matrix substrate, and Fig. 2 B illustrates film transistor matrix substrate among Fig. 2 A along the generalized section of hatching a-b.Please be simultaneously with reference to Fig. 2 A and Fig. 2 B, if the sub-pixel unit 240 of the colored filter film of corresponding red R, green G, blue B is arranged in triangle (delta) mode, shown in Fig. 2 A, can address the above problem, and obtain better image and show, yet corresponding thin-film transistor 242 is arranged and is also needed to change together, makes the type of drive (shown in Figure 1A) of originally single data wiring 130 control solid colors change over comparatively complicated type of drive such as same data wiring 230 two kinds of colors of control (shown in Fig. 2 A).
In addition, between transparency conductive electrode 244 and data wiring 230, have parasitic capacitance C
Pd(parasitic capacitance between pixel and data line) produces.When the distance between transparency conductive electrode 244 and the data wiring 230 is too near, can allow C
PdBecome big, make pixel be presented at data wiring 230 conversion unlike signals the time be interfered, and produce crosstalk effect (cross-talk), influence display quality.If between data wiring 230 and transparency conductive electrode 244, add the insulating barrier (insulator layer) (not illustrating) of a low-k (dielectricconstant), can reduce C
PdEffect, this insulating barrier comprises inorganic material, organic material or color filter film etc., can allow transparency conductive electrode 244 step up data wiring 230 and the increase aperture opening ratio.Fig. 2 C illustrates the capacity effect schematic diagram of the single sub-pixel unit among Fig. 2 A.Please refer to Fig. 2 C, as shown in Fig. 2 C, suppose the transparency conductive electrode 244 of a sub-pixel unit 240 and the data wiring 230 generation parasitic capacitance C on its left side (n-1 bar)
Pd', produce parasitic capacitance C with its right (n bar) data wiring 230
Pd, it is parasitic capacitance C that the electric charge that whole transparency conductive electrode 244 stores is subjected to total parasitic capacitance of data wiring 230
Pd' add parasitic capacitance C
PdInfluence.If collocation point counter-rotating (dot inversion) drives with row counter-rotating (column inversion) mode, promptly on same scan wiring 220, the voltage that the 230 same times of adjacent data distribution are sent is opposite with the positive negativity of pressure reduction of public electrode (commonline).Can make parasitic capacitance C
Pd' and parasitic capacitance C
PdSum total diminish because of positive negativity offsets.
Step up in transparency conductive electrode 244 on high aperture (high apertureratio) technology of (overlay) data wiring 230, influence left and right sides parasitic capacitance C
Pd' and parasitic capacitance C
PdThe principal element of difference value be the size that transparency conductive electrode 244 is stepped up data wiring 230 areas.Though the area that can make the right and left transparency conductive electrode 244 step up data wiring 230 when mask design equates.But on actual process, because the influence of the precision of board exposure aligning all can have so-called lap skew (overlay shift), easier generation in large size panel between layer and the layer.When the lap skew (overlay shift) of transparency conductive electrode that technology produced 244 and data wiring 230 greatly too the time, can make parasitic capacitance C
PdWith parasitic capacitance C
Pd' value differ too much, cause total parasitic capacitance value to increase, and have influence on the display quality of pixel.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of drive pattern of simplifying the active device matrix of rounded projections arranged, make it drive same color with same data wiring; The lap skew (overlay shift) that can prevent from simultaneously to make pixel electrode and data wiring because of technological factor is greatly the time, and the right and left parasitic capacitance that causes has big difference and causes problem such as crosstalk effect.
Based on above-mentioned purpose or other purpose, the present invention proposes a kind of matrix substrate of active device, and it comprises a substrate, plurality of scanning wirings, many data wirings and a plurality of sub-pixel unit.Scan wiring and data wiring all are disposed on the substrate, and wherein these scan wirings and data wiring define a plurality of pixel regions that are triangularly arranged on substrate.This data wiring cooperates the peripheral turnover of pixel region, and the turning point of odd number bar data wiring and even number bar data wiring is symmetry or is mirror image (symmetry or mirror) that the while, single data wiring was responsible for the driving of solid color.Sub-pixel unit corresponds respectively to these pixel regions and is disposed on the substrate, and be electrical connected with corresponding scan wiring and data wiring, between the pairing pixel region of wantonly two adjacent sub-pixel unit of the same side on the same horizontal sweep distribution, dispose two data wirings, the voltage that this two same times of data wiring are sent, opposite with the positive negativity of pressure reduction of public electrode (common line), promptly adopt a counter-rotating (dot inversion) or row counter-rotating (column inversion).And each sub-pixel unit comprises an active device and a pixel electrode.Active device is electrical connected with corresponding scan wiring and data wiring.Pixel electrode and active device are electrical connected, and the pixel region by the sub-pixel unit correspondence extends to these data wiring tops outward, wherein be electrical connected, and be positioned at distance between the pixel electrode of wantonly two adjacent sub-pixel unit of this scan wiring the same side less than the beeline of adjacent data wiring closet with the same scan distribution.
According to the described matrix substrate of active device of the preferred embodiment of the present invention, wherein these pixel electrodes for example are the honeycomb electrode.
According to the described matrix substrate of active device of the preferred embodiment of the present invention, wherein these pixel electrodes for example are rectangular electrode.
According to the described matrix substrate of active device of the preferred embodiment of the present invention, wherein each pixel electrode has two and lays respectively at reference line both sides and electrode connected to one another partly, and these electrodes partly are symmetrical in reference line.
According to the described matrix substrate of active device of the preferred embodiment of the present invention, wherein these electrodes for example are trapezoidal partly.
According to the described matrix substrate of active device of the preferred embodiment of the present invention, wherein these electrodes for example are parallelogram partly.
According to the described matrix substrate of active device of the preferred embodiment of the present invention, for example more comprise a low dielectric constant material layer, its dielectric constant of this material (dielectric constant) is disposed on the substrate less than 7, and wherein low dielectric constant material layer is disposed between pixel electrode and the data wiring.
In sum, in matrix substrate of active device of the present invention, be electrical connected with same scan wiring, and be triangularly arranged, can make the display panels made from matrix substrate of active device of the present invention obtain better display quality for any three sub-pixel unit adjacent one another are.In addition, consider the accurate process shifts amount that produces of photoetching equipment contraposition, can when mask design, the value of process shifts amount be counted, make the distance between the pixel electrode of the wantonly two adjacent sub-pixel unit that are positioned at scan wiring the same side after the process shifts, still can be less than the beeline of adjacent data wiring closet, so can the fixed pixel electrode and the overlapping area of data wiring.The driving of collocation point counter-rotating (dot inversion) and row counter-rotating (column inversion) can make the size of total parasitic capacitance value reduce to minimum.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A illustrates the top view of a conventional film transistor matrix substrate.
Figure 1B illustrates film transistor matrix substrate among Figure 1A along the generalized section of hatching a-b.
Fig. 2 A illustrates the top view of conventional another kind of film transistor matrix substrate.
Fig. 2 B illustrates film transistor matrix substrate among Fig. 2 A along the generalized section of hatching a-b.
Fig. 2 C illustrates the capacity effect schematic diagram of the single sub-pixel unit among Fig. 2 A.
Fig. 3 A illustrates the top view of the matrix substrate of active device of first embodiment of the invention.
Fig. 3 B and Fig. 3 C illustrate matrix substrate of active device among Fig. 3 A respectively along the generalized section of hatching a-b and hatching c-d.
Fig. 3 D illustrates the top view of another kind of matrix substrate of active device.
Fig. 3 E illustrates the drive circuit figure schematic diagram of the active device matrix that is triangularly arranged among Fig. 3 D.
Fig. 4 A illustrates the top view of the matrix substrate of active device of second embodiment of the invention.
Fig. 4 B and Fig. 4 C illustrate matrix substrate of active device among Fig. 4 A respectively along the generalized section of hatching a-b and hatching c-d.
Fig. 5 A illustrates the top view of the matrix substrate of active device of third embodiment of the invention.
Fig. 5 B and Fig. 5 C illustrate matrix substrate of active device among Fig. 5 A respectively along the generalized section of hatching a-b and hatching c-d.
Fig. 6 A illustrates the top view of the matrix substrate of active device of fourth embodiment of the invention.
Fig. 6 B and Fig. 6 C illustrate matrix substrate of active device among Fig. 6 A respectively along the generalized section of hatching a-b and hatching c-d.The simple symbol explanation
100,200: film transistor matrix substrate
110,210: glass substrate
120,220,320: scan wiring
130,230,330,430,530,630: data wiring
140,240,340,340 ', 440,540,640: sub-pixel unit
142,242: thin-film transistor
144,244: transparency conductive electrode
300,300 ', 400,500,600: matrix substrate of active device
310: substrate
342: active device
344,344 ', 444,544,644: pixel electrode
350,450,550,650: pixel region
360: low dielectric constant material layer
544a, 544b, 644a, 644b: electrode partly
544c, 644c: reference line
Embodiment
First embodiment
Fig. 3 A illustrates the top view of the matrix substrate of active device of first embodiment of the invention, and Fig. 3 B and Fig. 3 C illustrate matrix substrate of active device among Fig. 3 A respectively along the generalized section of hatching a-b and hatching c-d.Please be simultaneously with reference to Fig. 3 A to Fig. 3 C, the matrix substrate of active device 300 of present embodiment comprises a substrate 310, plurality of scanning wirings 320, many data wirings 330 and a plurality of sub-pixel unit 340.Below will be described further at the relative position of substrate 310, scan wiring 320, data wiring 330 and sub-pixel unit 340, thin bilge construction and material.
Illustrate as Fig. 3 A, each sub-pixel unit 340 comprises an active device 342 and a pixel electrode 344.Wherein, active device 342 is electrical connected with corresponding scan wiring 320 and data wiring 330, and this active device 342 for example is a thin-film transistor or other has the switching device (tri-polar switching device) of three terminals.Pixel electrode 344 is electrical connected with active device 342, this pixel electrode 344 for example is a transparency electrode (transmissive electrode), reflecting electrode (reflectiveelectrode) or half-transmitting and half-reflecting electrode (transflective electrode), and the material of pixel electrode 344 can be indium tin oxide, indium-zinc oxide (indium zinc oxide; IZO), metal or other transparent or opaque electric conducting material.In addition, pixel electrode 344 is extended on the data wiring 330 outward by the pixel region 350 of sub-pixel unit 340 correspondences, wherein and same scan distribution 320 is electrical connected and be spaced a distance d between wantonly two adjacent pixel electrodes 344 of these scan wiring 320 the same sides
1, this distance is less than the beeline d of 330 of adjacent data distributions
2In other words,, the data wiring 330 of this pixel electrode 344 the most close is arranged respectively at the right and left of each pixel electrode 344, and the overlap data wiring 330 of these two these pixel electrodes 344 the most close of this pixel electrode 344.More specifically, can to make pixel electrode 344 the right and lefts overlap onto the area of data wiring 330 identical in the design of matrix substrate of active device 300.
In the present embodiment, the sub-pixel unit 340 of same odd column is driven by odd number bar data wiring 330, and 340 of the sub-pixel unit of same even column are driven by even number bar data wiring 330.Fig. 3 A shows n bar to the n+5 bar data wiring 330 of matrix substrate of active device 300, and the m that has also shown matrix substrate of active device 300 is listed as to the part sub-pixel unit 340 of m+2 row, and n wherein, m for example are all odd number.Hold above-mentionedly, m in Fig. 3 A row are driven by n bar, n+2 bar and n+4 bar data wiring 330 respectively with the sub-pixel unit 340 of m+2 row; The sub-pixel unit 340 of the m+1 row in Fig. 3 A is driven by n+1 bar and n+3 bar data wiring 330 respectively.In another embodiment, the sub-pixel unit 340 of same odd column is driven by even number bar data wiring 330, and 340 of the sub-pixel unit of same even column are driven by odd number bar data wiring 330.Yet sub-pixel unit 340 does not limit above-mentioned method with the layout (layout) of data wiring 330.In addition, the advantage relevant for the matrix substrate of active device 300 of present embodiment will be specified in down.
The pixel region 350 that is triangularly arranged owing to sub-pixel unit 340 correspondences is configured on the substrate 310, so the sub-pixel unit 340 of matrix substrate of active device 300 also is triangularly arranged.When active device matrix base plate 300 and a colored optical filtering substrates (not illustrating) to group, and inject liquid crystal (not illustrating) with after forming a display panels (not illustrating), in matrix substrate of active device 300, any three the adjacent subpixels unit 340 that are electrical connected with same scan wiring 320 not only are triangularly arranged, and correspond respectively to the colored filter film of the different colours on the colored optical filtering substrates, for example the colored filter film of red R, green G, blue B.When the display panels display frame made with matrix substrate of active device 300, the light that appears from the colored filter film of the red R of correspondence, green G, blue B is colour mixture more equably, and therefore the display panels made from matrix substrate of active device 300 has better display quality.
In the present embodiment, pixel electrode 344 is the honeycomb electrode for example, and is the shape that cooperates pixel electrode 344, and 330 of data wirings bend along with the edge of pixel electrode 344.Because the data wiring 330 of overlapping this pixel electrode 344 the most close of the right and left each several part of each pixel electrode 344, so all have parasitic capacitance C between the data wiring 330 of each sub-pixel unit 340 and the right and left
PdProduce.Because the area of the right and left overlapped data distribution 330 of this pixel electrode 344 is identical, so the parasitic capacitance value between the data wiring 330 of each sub-pixel unit 340 and the right and left can balance.
More specifically, present embodiment utilizes the turnover of symmetric form data wiring 330, a kind of new rounded projections arranged matrix is provided, because new its 340 of adjacent two sub-pixel unit that are positioned at scan wiring 320 the same sides of rounded projections arranged matrix have the data wiring 330 of two control unlike signals to pass through, and the pixel electrode 344 of two adjacent sub-pixel unit 340 is crossed over the data wiring 330 near one's own side respectively, consider the accurate process shifts amount that produces of photoetching equipment contraposition, can when mask design, the value of process shifts amount be counted, make between the two adjacent pixel electrodes 344 apart from d
1After the process shifts still less than between two data wirings 330 apart from d
2, with reference to figure 3C, can make the overlapping area of pixel electrode and data electrode constant, so the right and left parasitic capacitance C
PdWith parasitic capacitance C
Pd' size can be close, can not change because the skew of the lap between technology (overlay shift).When cooperating employing point counter-rotating (dot inversion), row counter-rotating type of drive such as (column inversion) with matrix substrate of active device 300, that is, the data wiring 330 that odd number is capable applies the voltage (with respect to public electrode) of positive polarity, when the data wiring 330 of odd-numbered line applies the voltage of negative polarity, so, the effect of the parasitic capacitance on sub-pixel unit 340 both sides can be cancelled out each other, and therefore can reduce crosstalk effect (cross talk).
Be noted that, though present embodiment is the honeycomb electrode with pixel electrode 344, and being made as display panels with matrix substrate of active device 300 describes, but the pixel electrode 344 of matrix substrate of active device 300 of the present invention is not defined as the honeycomb electrode, and matrix substrate of active device 300 is not defined for the making display panels yet.In other words, the pixel electrode 344 of matrix substrate of active device 300 of the present invention can be the electrode of other shape according to different demands, and matrix substrate of active device of the present invention 300 also can be used for making other display floater.
Fig. 3 D illustrates the top view of another kind of matrix substrate of active device, and it is the variation of the matrix substrate of active device 300 of Fig. 3 A.Please refer to Fig. 3 D, matrix substrate of active device 300 ' and aforementioned matrix substrate of active device 300 are similar, and difference is: in matrix substrate of active device 300 ', pixel electrode 344 ' does not cover data wiring 330.Fig. 3 E illustrates the drive circuit figure schematic diagram of the active device matrix that is triangularly arranged among Fig. 3 D.Please refer to Fig. 3 D, in matrix substrate of active device 300 ', pixel electrode 344 ' utilizes the turnover of symmetric form data wiring 330, and a kind of new rounded projections arranged matrix is provided, and this rounded projections arranged matrix can be with the driving of single kind of color of comparatively simple single data wiring 330 controls.
Second embodiment
Fig. 4 A illustrates the top view of the matrix substrate of active device of second embodiment of the invention, and Fig. 4 B and Fig. 4 C illustrate matrix substrate of active device among Fig. 4 A respectively along the generalized section of hatching a-b and hatching c-d.Please be simultaneously with reference to Fig. 4 A to Fig. 4 C, the matrix substrate of active device 300 of the matrix substrate of active device 400 and first embodiment is similar, main difference part is that the pixel electrode 444 of present embodiment is rectangular electrode, and 430 of data wirings bend along with the shape of pixel electrode 444, with the pixel region 450 of definition rectangle.
Hold above-mentionedly, the advantage of the matrix substrate of active device 400 of present embodiment is identical with the matrix substrate of active device 300 of first embodiment, so no longer repeat at this.
In addition, also the pixel electrode 444 of matrix substrate of active device 400 can be made not cover into the pattern of data wiring 430, to form another kind of new matrix substrate of active device (not illustrating).In this matrix substrate of active device, can utilize the driving of single kind of color of single data wiring 430 controls.
The 3rd embodiment
Fig. 5 A illustrates the top view of the matrix substrate of active device of third embodiment of the invention, and Fig. 5 B and Fig. 5 C illustrate matrix substrate of active device among Fig. 5 A respectively along the generalized section of hatching a-b and hatching c-d.Please be simultaneously with reference to Fig. 5 A to Fig. 5 C, the matrix substrate of active device 300 of the matrix substrate of active device 500 and first embodiment is similar, main difference part is that the pixel electrode 544 of present embodiment can be defined out and lays respectively at reference line 544c both sides and electrode connected to one another partly 544a, 544b, and these two electrodes partly 544a, 544b are symmetrical in reference line 544c.Wherein these two electrodes partly 544a, 544b be trapezoidal, and 530 of data wirings bend along with the shape of pixel electrode 544, with the pixel region 550 of definition shield shape.
Hold above-mentionedly, the advantage of the matrix substrate of active device 500 of present embodiment is identical with the matrix substrate of active device 300 of first embodiment, so no longer repeat at this.In addition, also the pixel electrode 544 of matrix substrate of active device 500 can be made not cover into the figure of data wiring 530, to form another kind of new matrix substrate of active device (not illustrating).In this matrix substrate of active device, can utilize the driving of single kind of color of single data wiring 530 controls.
Be noted that partly 544a, 544b are not defined as trapezoidal two electrodes of the pixel electrode 544 of present embodiment.Partly 544a, 544b can be the electrode of other shape according to different demands to two electrodes of the pixel electrode 544 of matrix substrate of active device 500 of the present invention.
The 4th embodiment
Fig. 6 A illustrates the top view of the matrix substrate of active device of fourth embodiment of the invention, and Fig. 6 B and Fig. 6 C illustrate matrix substrate of active device among Fig. 6 A respectively along the generalized section of hatching a-b and hatching c-d.Please be simultaneously with reference to Fig. 6 A to Fig. 6 C, the matrix substrate of active device 500 of the matrix substrate of active device 600 and first embodiment is similar, main difference part is that pixel electrode 644 definables of present embodiment go out two electrodes partly 644a, 644b, it is symmetrical in reference line 644c, and be parallelogram, and 630 of data wirings bend along with the shape of pixel electrode 644, with the pixel region 650 of definition Hili dart (boomerang) shape.
Hold above-mentionedly, the advantage of the matrix substrate of active device 600 of present embodiment is identical with the matrix substrate of active device 300 of first embodiment, so no longer repeat at this.
As previous embodiment, the pixel electrode 644 of matrix substrate of active device 600 then can form a kind of matrix substrate of active device (not illustrating) that utilizes the driving of single kind of color of single data wiring 630 controls if make not cover the pattern of data wiring 630 into.
In sum, have following advantage at least at matrix substrate of active device of the present invention:
One, can to make pixel electrode the right and left cover the area of data wiring identical in the design of matrix substrate of active device of the present invention, can not change area coverage in technologic skew because of data wiring layer and transparency conducting layer.Therefore when producing matrix substrate of active device of the present invention, the process shifts amount nargin (process window) between pixel electrode and data wiring is preferable.
Two, in matrix substrate of active device of the present invention, therefore pixel electrode the right and left data wiring of all overlapping can increase the aperture opening ratio (aperture ratio) of the display panels made from matrix substrate of active device of the present invention.
Three, in matrix substrate of active device of the present invention, be electrical connected with same scan wiring and adjacent any three sub-pixel unit are triangularly arranged, can make the display panels made from matrix substrate of active device of the present invention obtain better display quality.
Four, matrix substrate of active device of the present invention can comprise an advanced low-k materials (low-k material) layer, this dielectric insulation layer comprises inorganic material, organic material or color filter film etc., its dielectric constant (dielectric constant) is less than 7, and be disposed between pixel electrode and the data wiring, the capacitance of parasitic capacitance is between the two reduced, the influence the when store charge on the minimizing transparency electrode is subjected to data wiring conveying signal.
Five, in matrix substrate of active device of the present invention, when transparency conductive electrode cover data distribution, the parasitic capacitance value that can control between the data wiring of each pixel electrode and the right and left is identical, after type of drive such as points of engagement counter-rotating, row counter-rotating, can allow total parasitic capacitance reach minimum because of positive-negative polarity subtracts each other.
Though the present invention discloses as above with preferred embodiment; right its is not in order to qualification the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (11)
1. matrix substrate of active device comprises:
Substrate;
Plurality of scanning wirings is disposed on this substrate;
Many data wirings are disposed on this substrate, and wherein those scan wirings and those data wirings define a plurality of pixel regions that are delta arrangement on this substrate; And
A plurality of sub-pixel unit, correspond respectively to those pixel regions and be disposed on this substrate, and be electrical connected with corresponding scan wiring and data wiring, wherein and the same scan distribution is electrical connected and dispose two data wirings between the pairing pixel region of wantonly two adjacent sub-pixel unit of this scan wiring the same side, and each sub-pixel unit comprises:
Active device is electrical connected with corresponding scan wiring and data wiring; And
Pixel electrode is electrical connected with this active device, and being somebody's turn to do by this sub-pixel unit correspondence
Pixel region extends to those data wiring tops outward.
2. matrix substrate of active device as claimed in claim 1, wherein those pixel electrodes are the honeycomb electrode.
3. matrix substrate of active device as claimed in claim 1, wherein those pixel electrodes are rectangular electrode.
4. matrix substrate of active device as claimed in claim 1, wherein each those pixel electrode has two and lays respectively at reference line both sides and electrode connected to one another partly, and those electrodes partly are symmetrical in this reference line.
5. matrix substrate of active device as claimed in claim 4, wherein those electrodes partly are trapezoidal.
6. matrix substrate of active device as claimed in claim 4, wherein those electrodes partly are parallelogram.
7. matrix substrate of active device as claimed in claim 1, also comprise low dielectric constant material layer, the dielectric constant of this low dielectric constant material layer is disposed on this substrate less than 7, and wherein this low dielectric constant material layer is disposed between those pixel electrodes and those data wirings.
8. matrix substrate of active device as claimed in claim 1, wherein the sub-pixel unit of same odd column is driven by those odd number bar data wirings, and the sub-pixel unit of same even column is driven by those even number bar data wirings.
9. matrix substrate of active device as claimed in claim 1, wherein the sub-pixel unit of same odd column is driven by those even number bar data wirings, and the sub-pixel unit of same even column is driven by those odd number bar data wirings.
10. matrix substrate of active device as claimed in claim 1, wherein corresponding those sub-pixel unit that drive of the data wire in those data wirings only show a kind of color.
11. matrix substrate of active device as claimed in claim 1, wherein and the same scan distribution is electrical connected and the distance between the pixel electrode of the wantonly two adjacent sub-pixel unit of this scan wiring the same side less than the beeline between the adjacent data distribution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100878859A CN100405605C (en) | 2006-05-26 | 2006-05-26 | Matrix substrate of active device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100878859A CN100405605C (en) | 2006-05-26 | 2006-05-26 | Matrix substrate of active device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1870277A true CN1870277A (en) | 2006-11-29 |
| CN100405605C CN100405605C (en) | 2008-07-23 |
Family
ID=37443875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100878859A Expired - Fee Related CN100405605C (en) | 2006-05-26 | 2006-05-26 | Matrix substrate of active device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100405605C (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102213887A (en) * | 2011-07-06 | 2011-10-12 | 南京中电熊猫液晶显示科技有限公司 | Basic pixel structure of liquid crystal display |
| CN101893792B (en) * | 2009-05-20 | 2012-03-21 | 联咏科技股份有限公司 | Liquid crystal display panel and display device |
| US8164605B2 (en) | 2009-05-11 | 2012-04-24 | Novatek Microelectronics Corp. | Liquid crystal display panel and display devices |
| CN102981334A (en) * | 2012-11-27 | 2013-03-20 | 深圳市华星光电技术有限公司 | Liquid crystal display device, array substrate of liquid crystal display device, and manufacturing method of array substrate |
| CN103985738A (en) * | 2014-05-08 | 2014-08-13 | 京东方科技集团股份有限公司 | Pixel structure and display device |
| CN104483794A (en) * | 2014-12-29 | 2015-04-01 | 上海天马微电子有限公司 | Array substrate, display panel, driving method of display panel and display device |
| WO2015109784A1 (en) * | 2014-01-26 | 2015-07-30 | 京东方科技集团股份有限公司 | Pixel array and driving method therefor, display panel, and display device |
| CN106530971A (en) * | 2016-11-29 | 2017-03-22 | 京东方科技集团股份有限公司 | Manufacturing method of display substrate, display substrate and display device |
| CN109634009A (en) * | 2018-12-29 | 2019-04-16 | 惠科股份有限公司 | Display panel and display device |
| CN110021238A (en) * | 2018-01-10 | 2019-07-16 | 佳能株式会社 | Show equipment and picture pick-up device |
| CN110506308A (en) * | 2017-03-30 | 2019-11-26 | 夏普株式会社 | Display device |
| CN112051692A (en) * | 2020-05-30 | 2020-12-08 | 京东方科技集团股份有限公司 | Display substrate, driving method and maintenance method thereof, display panel and display device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1104339A (en) * | 1993-12-20 | 1995-06-28 | 株式会社金星社 | Active matrix liquid crystal display panel |
| KR100280874B1 (en) * | 1997-09-12 | 2001-02-01 | 구본준 | LCD panel |
| CN1332448C (en) * | 2002-12-03 | 2007-08-15 | 友达光电股份有限公司 | Active organic light-emitting diode pixel arrangement and method for making same |
| US20050062692A1 (en) * | 2003-09-22 | 2005-03-24 | Shin-Tai Lo | Current driving apparatus and method for active matrix OLED |
-
2006
- 2006-05-26 CN CNB2006100878859A patent/CN100405605C/en not_active Expired - Fee Related
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8164605B2 (en) | 2009-05-11 | 2012-04-24 | Novatek Microelectronics Corp. | Liquid crystal display panel and display devices |
| CN101893792B (en) * | 2009-05-20 | 2012-03-21 | 联咏科技股份有限公司 | Liquid crystal display panel and display device |
| CN102213887A (en) * | 2011-07-06 | 2011-10-12 | 南京中电熊猫液晶显示科技有限公司 | Basic pixel structure of liquid crystal display |
| CN102981334A (en) * | 2012-11-27 | 2013-03-20 | 深圳市华星光电技术有限公司 | Liquid crystal display device, array substrate of liquid crystal display device, and manufacturing method of array substrate |
| WO2014082321A1 (en) * | 2012-11-27 | 2014-06-05 | 深圳市华星光电技术有限公司 | Liquid crystal display device and array substrate thereof, and method for manufacturing array substrate |
| WO2015109784A1 (en) * | 2014-01-26 | 2015-07-30 | 京东方科技集团股份有限公司 | Pixel array and driving method therefor, display panel, and display device |
| US9734795B2 (en) | 2014-01-26 | 2017-08-15 | Boe Technology Group Co. Ltd. | Pixel array and driving method thereof, display panel and display device |
| WO2015169077A1 (en) * | 2014-05-08 | 2015-11-12 | 京东方科技集团股份有限公司 | Pixel structure and display device |
| CN103985738B (en) * | 2014-05-08 | 2015-06-17 | 京东方科技集团股份有限公司 | Pixel structure and display device |
| US9812512B2 (en) | 2014-05-08 | 2017-11-07 | Boe Technology Group Co., Ltd. | Pixel structure and display apparatus |
| CN103985738A (en) * | 2014-05-08 | 2014-08-13 | 京东方科技集团股份有限公司 | Pixel structure and display device |
| CN104483794A (en) * | 2014-12-29 | 2015-04-01 | 上海天马微电子有限公司 | Array substrate, display panel, driving method of display panel and display device |
| CN104483794B (en) * | 2014-12-29 | 2017-06-13 | 上海天马微电子有限公司 | Array substrate, display panel, driving method of display panel and display device |
| CN106530971A (en) * | 2016-11-29 | 2017-03-22 | 京东方科技集团股份有限公司 | Manufacturing method of display substrate, display substrate and display device |
| CN106530971B (en) * | 2016-11-29 | 2019-02-22 | 京东方科技集团股份有限公司 | A kind of production method of display base plate, display base plate and display device |
| US10396130B2 (en) | 2016-11-29 | 2019-08-27 | Boe Technology Group Co., Ltd. | Display substrate including sub-electrodes having trapezium shape and method for manufacturing the same |
| CN110506308A (en) * | 2017-03-30 | 2019-11-26 | 夏普株式会社 | Display device |
| CN110506308B (en) * | 2017-03-30 | 2021-07-23 | 夏普株式会社 | Display device |
| CN110021238A (en) * | 2018-01-10 | 2019-07-16 | 佳能株式会社 | Show equipment and picture pick-up device |
| US10985216B2 (en) | 2018-01-10 | 2021-04-20 | Canon Kabushiki Kaisha | Display apparatus and imaging apparatus |
| CN109634009A (en) * | 2018-12-29 | 2019-04-16 | 惠科股份有限公司 | Display panel and display device |
| CN112051692A (en) * | 2020-05-30 | 2020-12-08 | 京东方科技集团股份有限公司 | Display substrate, driving method and maintenance method thereof, display panel and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100405605C (en) | 2008-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1870277A (en) | Matrix substrate of active device | |
| US10423025B2 (en) | Curved display panel, curved display apparatus, and fabricating method thereof | |
| US20220320146A1 (en) | Display panel, manufacturing method thereof, and display device | |
| CN112445038B (en) | Display panel and display device | |
| CN1530724A (en) | Four-colour liquid-crystal displaying device and panel therefor | |
| CN1573491A (en) | Thin film transistor array panel and liquid crystal display including the panel | |
| CN1912717A (en) | Liquid crystal display device | |
| CN100573292C (en) | Display panels and the method for making its subtend substrate | |
| KR20100019601A (en) | Display device | |
| CN1956200A (en) | Thin film transistor array panel | |
| CN1648757A (en) | Active matrix substrate and display device | |
| CN101063783A (en) | Reflection type liquid crystal display apparatus and substrate for reflection type liquid crystal display | |
| CN1704829A (en) | Liquid crystal display with wide viewing angle | |
| US9436043B2 (en) | Array substrate and liquid crystal display panel | |
| CN1232871C (en) | Liquid crystal display apparatus | |
| US20210165292A1 (en) | Display panel and display apparatus using same | |
| CN1278174C (en) | Pixel arrangement of the thin film transistor LCD | |
| CN1831601A (en) | Manufacturing method of liquid crystal display | |
| CN100412670C (en) | Pixel structure and liquid crystal panel | |
| US7518686B2 (en) | Liquid crystal display | |
| US11294248B2 (en) | Display panel and display device | |
| CN1558285A (en) | Active type array liquid crystal display | |
| CN100343743C (en) | LCD laser repairing method and structure | |
| CN1612026A (en) | Film diode plate and its mfg. method | |
| CN115016185B (en) | Display panel and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080723 |