CN1845287A - Surface conducting field emission electronic source device with convergent characteristic - Google Patents
Surface conducting field emission electronic source device with convergent characteristic Download PDFInfo
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- CN1845287A CN1845287A CN 200610042560 CN200610042560A CN1845287A CN 1845287 A CN1845287 A CN 1845287A CN 200610042560 CN200610042560 CN 200610042560 CN 200610042560 A CN200610042560 A CN 200610042560A CN 1845287 A CN1845287 A CN 1845287A
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Abstract
The disclosed surface-conductive field-emission electron source device with convergence feature comprises a substrate with an inverted-T shaped or I-shaped grid, a cathode and an insulating layer, and an opposite anode fixed in a vacuum cavity. Wherein, arranging the grid between the insulating layer and the substrate, showing the grid through a hole to circle by the cathode; arranging an electron emission layer between the cathode and the insulating layer, and adding a layer of cathode between the emission layer and the insulating layer to form a sandwich cathode, as well as an electron scattering layer between the cathode and shown grid. This invention needs simple technique and low drive voltage, and has well electron convergence performance.
Description
Technical field
The present invention relates to a kind of device that utilizes field-causing electron emission (being called for short an emission) phenomenon electron gain bundle in vacuum environment---a surface conductive field emission electronic source device of the characteristic of converging had
Background technology
Common field emission electronic source device is to utilize the electronics (an emission phenomenon) of overflowing from solid material surface under strong External Electrical Field, and the electric field that utilizes grid, anode to apply is realized the electronic device of functions such as emission, modulation and the acceleration of electronics is luminous to obtain, the higher-order of oscillation, X ray.At present existing multiple field emission electronic source device structure is as metal or semiconductor microactuator point+circular hole grid (being called for short little sharp type), surface conductive type (SED type), metal-insulating barrier-metal (abbreviation mim type), metal-insulating barrier-semiconductor (MOS type) etc.In the structure of little sharp type, the negative electrode of emitting electrons is positioned at the center of circular hole grid; Negative electrode is relative with anode in the surface conductive type; The complete covered cathode of grid in MIM or the MOS structure.All electronic source device structures all respectively have pluses and minuses, and as the efficient height that little sharp type has emitting electrons, driving voltage is low relatively, but have the shortcoming of electron beam divergence, complicated process of preparation; Surface conductive type (SED type) has that driving voltage is low, the simple advantage of preparation technology, also has electron beam divergence, inefficient shortcoming simultaneously; The electron source of MIM or MOS type structure has that driving voltage is low, electron beam divergence is little, but efficient is low, and technological requirement is than higher shortcoming.
Summary of the invention
The purpose of this invention is to provide a kind of surface conductive field emission electronic source device, to remedy the deficiency of prior art with the characteristic of converging.
Basic design of the present invention is by changing the electrode structure of field emitting electronic source in the past, make the negative electrode all around gate of emitting electrons, thereby make and to converge to grid, to solve the problem of the electron beam divergence of surface conductive type (SED type) and little sharp type field emitting electronic source in the past from the electronics of cathode emission.Promptly utilize rational electrode structure to realize the self-aggregation of electron beam.
The present invention is the improvement to existing SED type and little sharp type feds, it comprises the substrate with negative electrode and two or more electrodes of grid, and relative with this substrate at regular intervals being parallel to each other or relative conductive substrate or wire, rod etc. (as anode) and contained and be fixed in the vacuum tank and corresponding power supply V
1And V
2, it is characterized in that cathode loop is around the grid (in a vacuum) that exposes or reveal on the substrate with negative electrode and control grid, make from the electronics of cathode emission, in the gate electrode motion process, focused on by cathode electrode itself again, thereby reduce dispersing of electron beam.Basic functional principle of the present invention: promptly under the effect of the forward voltage of grid 2, the electronics that emits from the electron emission layer 4 that links to each other with negative electrode 3 moves to grid quickening; Portions of electronics is arranged simultaneously to high-voltage anode 1 motion.Be subjected to the effect of grid simultaneously to high-voltage anode 1 ELECTRON OF MOTION.Since expose in a vacuum grid by cathode loop around, the feasible effect that not only is subjected to grid 2 to high-voltage anode 1 ELECTRON OF MOTION, also be subjected to simultaneously the restriction of negative electrode 1 itself, thereby make electronics converge, promptly solved the problem of electron beam divergence to the grid center.
Therefore, the present invention includes grid, negative electrode and insulating barrier on the substrate, and anode at regular intervals on the other side, and the quilt containing is fixed in the vacuum cavity, it is characterized in that grid is positioned in the middle of insulating barrier and the substrate, and the grid that from insulating barrier, reveals by the hole by cathode loop around, between negative electrode and insulating barrier, be provided with one deck electron emission layer again.
If will reduce the operating voltage that is applied on the grid, can extend above-mentioned grid to surface of insulating layer, form the structure of inverted T-shaped grid, perhaps form be higher than " worker " shape grid structure of insulating barrier upper surface or put down in, be lower than " worker " shape grid structure of insulating barrier.Therefore, above-mentioned grid can be strip, inverted T-shaped or " worker " shape grid structure.
Further, between above-mentioned insulating barrier and electron emission layer, add one deck negative electrode again, make electron emission layer between two-layer negative electrode, form the interlayer negative electrode, to improve contacting of electron emission layer and negative electrode.
In order to improve the uniformity of emission and electronics thereof emission, can be provided with the electron scattering layer again at the surface of insulating layer between negative electrode and the grid that reveals.Electron emission layer can replace with the electronics scattering layer, to simplify technology.
In sum, the present invention efficiently solves the deficiency of the electron beam divergence of little sharp type and surface conductive type field emission electronic source device, and technology is simple, driving voltage is low, efficient is high.
Description of drawings
Fig. 1 is a basic structure schematic diagram of the present invention.
Fig. 2 is the structural representation of inverted T-shaped grid of the present invention.
Fig. 3 is the structural representation of " worker " of the present invention shape grid.
Fig. 4 is the structural representation of another kind of the present invention " worker " shape grid.
Fig. 5 is the basic structure schematic diagram of electron emission layer of the present invention between two-layer negative electrode.
Fig. 6 is the structural representation of another kind of electron emission layer of the present invention between two-layer negative electrode.
Fig. 7 has the basic structure schematic diagram of electron scattering layer for surface of insulating layer of the present invention.
Fig. 8 has the structural representation of electron scattering layer at surface of insulating layer for another kind of the present invention.
Fig. 9 is an array structure schematic diagram of the present invention.
Wherein: 1, anode; 2, grid; 3, negative electrode; 4, electron emission layer; 5, insulating barrier; 6, substrate;
7, vacuum cavity; 8, the electron scattering layer.V
1And V
2Be additional power source.
Embodiment
As Fig. 1, the present invention includes grid 2, negative electrode 3 and insulating barrier 5 on the substrate 6, and anode 1 at regular intervals on the other side, and be fixed in the vacuum cavity 7 and suitable power supplys by containing, it is middle with substrate 6 to it is characterized in that grid 2 is positioned at insulating barrier 5, and the grid 2 that from insulating barrier 5, reveals by the hole by negative electrode 3 around, be provided with an electron emission layer 4 between negative electrode 3 and the insulating barrier 5.
In order to reduce the operating voltage that is applied on the grid, from the insulating barrier circular hole, appear or the grid 2 that comes out can extend to the surface of insulating barrier 5, form the structure of inverted T-shaped grid, as Fig. 2; Perhaps form " worker " shape grid structure that is higher than insulating barrier 5, as shown in Figure 3.Therefore above-mentioned grid can be strip, inverted T-shaped or " worker " shape grid structure.
In order to reduce the probability that the electronics that emits from electron emission layer 4 is caught by grid 2, improve the emission effciency of electronics, grid among Fig. 3 can be extended to insulating barrier 5 surfaces down, or make the grid that extends out and insulating barrier on same plane, be that grid and insulating barrier are on same plane as shown in Figure 4.Therefore " worker " shape grid structure appears from circular hole or the height that comes out can be adjusted according to the concrete needs such as the grid operating voltage size of device.
Consider that electron emission layer 4 is bigger with the contact resistance of negative electrode 3, in order to reduce this contact resistance, can between insulating barrier in the structure shown in Figure 15 and electron emission layer 4, add one deck negative electrode again and (abbreviate negative electrode down as, negative electrode 3 on the relative electron emission layer 4 is last negative electrode), make electron emission layer between two-layer negative electrode, form the interlayer negative electrode of " sandwich " structure, therefore, one negative electrode is arranged, as shown in Figure 5 again between electron emission layer below the described negative electrode 3 and insulating barrier.The structure of its grid 2 also can have the structure among Fig. 1, Fig. 2, Fig. 3.
Equally, in order to improve the efficient of electronics emission, reduce the operating voltage that is applied on the grid, and simplify preparation technology, the electron emission layer 4 among Fig. 5 can cover the negative electrode (being the negative electrode between insulating barrier and the electron emission layer) of lower floor, as shown in Figure 6.Grid 2 equally wherein also can have the structure among Fig. 1, Fig. 2, Fig. 3.
In order to improve the uniformity of electronics emission, improve the current density of emission, can be provided with electron scattering layer 8 at the surface of insulating layer between negative electrode 3 and the grid that reveals 2, as Fig. 7.Electron scattering layer 8 mainly is a scattered electron, also can emitting electrons, so emission layer 4 can replace by electron scattering layer 8, and also electron scattering layer 8 can link to each other with negative electrode 3, grid 2, electron emission layer 4, also can not link to each other.Grid also can have the structure among Fig. 1, Fig. 2, Fig. 4; Negative electrode also can have the structure of Fig. 5, Fig. 6.Fig. 8 is the another kind of form with basic structure shown in Figure 7 of grid shown in Figure 4 and cathode construction, and this structure can improve the efficient of electronics emission.
Above multiple structure is repeated arrangement regularly, is prepared into array structure, promptly arranges the array structure of above-mentioned a plurality of arbitrary structures regularly in glass substrate 6 lip-deep insulating barriers 5, as Fig. 9.The grid of negative electrode and substrate surface can realize being similar to the X-Y matrix addressing of liquid crystal display.
Anode is a phosphor screen, also can be metallic plate, post, silk etc.And the material of preparation negative electrode and grid is metals such as aluminium, copper, nichrome, also can be the carbon element electric conducting material, perhaps the tin oxide transparent conductive materials such as (ITO) of indium doping.
Above-mentioned insulating barrier 5 can be oxide materials such as common silicon dioxide, alundum (Al or these a materials composite material mixed in certain proportion, also can be the organic-inorganic composite material.The thickness of insulating barrier depends on the characteristic of selected materials, and its scope is 0.01 micron to 500 microns.
Basic preparation technology of the present invention:
1, on glass substrate 6 surfaces, utilize common microelectronic technique (technology such as evaporation, deposition, photoetching, etching) method prepare thickness at 50 microns with interior grid 2;
2, on above-mentioned glass substrate with grid 2, utilize usual ways such as silk screen printing, spin coating, sputter to prepare insulating barrier 5; Utilize photoetching simultaneously or directly utilize the method for silk screen printing, in insulating barrier, form hole, part of grid pole 2 is therefrom revealed less than 1 millimeter;
3, after the preparation insulating barrier, utilize technologies such as common evaporation, printing, sputter, perhaps in conjunction with microelectronic techniques such as photoetching, around the grid hole that reveals, prepare electron emission layer 4, its thickness is advisable less than 1 millimeter;
4, on above-mentioned electron emission layer 4, utilize the microelectronic technique method of step 1, can make negative electrode 3 cover except the grid that comes out and neighbouring electron emission layer and insulating barrier; The thickness of negative electrode finally forms structure shown in Figure 1 less than 100 microns.
5, also can utilize the method for step 4, in preparation negative electrode 3, make grid 2 extend to surface of insulating layer (utilizing photoetching process to be easy to realize), and by cathode loop around, form the structure of formation inverted T-shaped grid shown in Figure 2, " worker " font grid perhaps shown in Figure 3.
6, before step 2, can utilize microelectronic technique (mainly being wet method or dry etching method), etching exposes the insulating barrier zone of grid selectively, utilizes " worker " font grid of the method preparation of step 5 then, forms grid structure shown in Figure 4.
7, after step 2, utilize step 6 and the prepared one deck negative electrode (promptly descending negative electrode) and " worker " font grid that utilize step 4, repeating step 3 preparation electron emission layers, step 4 prepare another layer negative electrode (going up negative electrode) then, form the electron source of negative electrode shown in Figure 5 and grid structure; Utilize microelectronic technique when the preparation electron emission layer, can make it cover negative electrode down, form cathode construction shown in Figure 6;
8, utilize step 5, step 3, step 4, and in conjunction with common microelectronic technique, preparation has the electron source of Fig. 1, Fig. 5, arbitrary cathode construction shown in Figure 6 and Fig. 1, Fig. 2, Fig. 3, arbitrary grid structure shown in Figure 4 respectively;
9, utilizing after above-mentioned steps preparation has the electron source of Fig. 1, Fig. 5, arbitrary cathode construction shown in Figure 6 and Fig. 1, Fig. 2, Fig. 3, arbitrary grid structure shown in Figure 4, utilizing that common microelectronic technique can (as between surface of insulating layer, negative electrode and the grid that reveals) prepares the electron scattering layer in the zone of appointment.The electron scattering layer can link to each other with negative electrode, grid, electron emission layer, also can not link to each other.For example, preparation has electron scattering layer 4 in the corresponding device with cathode construction shown in Figure 1, grid structure shown in Figure 3, forms structure shown in Figure 7; Preparation has electron scattering layer 4 in the corresponding device with cathode construction shown in Figure 1, grid structure shown in Figure 4, forms structure shown in Figure 8.
10, utilize common microelectronic technique that above-mentioned Fig. 1, Fig. 5, arbitrary cathode construction shown in Figure 6 and Fig. 1, Fig. 2, Fig. 3, the grid at substrate surface shown in Figure 4 are prepared into strip respectively, form strip negative electrode 3 and strip grid 2.Strip negative electrode 3 can be vertical mutually with strip grid 2 or becomes the angle of spending greater than 45 with the strip grid; Have above-mentioned field emission electron source structure at strip negative electrode 3 and strip grid 2 infalls, thereby can form array structure, as Fig. 9.Its width of strip negative electrode and grid can less than 10 millimeters, thickness can be less than 50 microns.
Claims (5)
1, a kind of surface conductive field emission electronic source device with the characteristic of converging, comprise grid (2), negative electrode (3) and insulating barrier (5) on the substrate (6), and anode at regular intervals on the other side (1), and the quilt containing is fixed in the vacuum cavity (7), it is middle with substrate (6) to it is characterized in that grid (2) is positioned at insulating barrier (5), and the grid (2) that from insulating barrier (5), reveals by the hole by negative electrode (3) around, be provided with an electron emission layer (4) between negative electrode (3) and the insulating barrier () 5.
2, the surface conductive field emission electronic source device with the characteristic of converging as claimed in claim 1 is characterized in that adding between above-mentioned insulating barrier (5) and the electron emission layer (4) one deck negative electrode (3) again and forms the interlayer negative electrode.
3, the surface conductive field emission electronic source device with the characteristic of converging as claimed in claim 1 is characterized in that there is electron scattering layer (8) on insulating barrier (5) surface between above-mentioned control grid (2) and the negative electrode (3).
4, the surface conductive field emission electronic source device with the characteristic of converging as claimed in claim 1 is characterized in that the described array structure of arranging above-mentioned a plurality of arbitrary structures in the lip-deep insulating barrier of glass substrate (6) (5) regularly.
5, the surface conductive field emission electronic source device with the characteristic of converging as claimed in claim 1 is characterized in that above-mentioned grid (2) can be inverted T-shaped or " worker " shape grid structure.
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| CN 200610042560 CN1845287A (en) | 2006-02-25 | 2006-02-25 | Surface conducting field emission electronic source device with convergent characteristic |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102262994A (en) * | 2011-06-21 | 2011-11-30 | 福州大学 | Oxide-nano-structure-based surface-conduction electron emission source and manufacturing method thereof |
| CN110767519A (en) * | 2019-10-21 | 2020-02-07 | 中国电子科技集团公司第十二研究所 | Field emission electron source structure and forming method thereof, electron source and microwave tube |
| CN112701021A (en) * | 2020-12-28 | 2021-04-23 | 国家纳米科学中心 | Structure and method for regulating and controlling cold cathode electron source side emission |
-
2006
- 2006-02-25 CN CN 200610042560 patent/CN1845287A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102262994A (en) * | 2011-06-21 | 2011-11-30 | 福州大学 | Oxide-nano-structure-based surface-conduction electron emission source and manufacturing method thereof |
| CN102262994B (en) * | 2011-06-21 | 2013-01-23 | 福州大学 | Oxide-nano-structure-based surface-conduction electron emission source and manufacturing method thereof |
| CN110767519A (en) * | 2019-10-21 | 2020-02-07 | 中国电子科技集团公司第十二研究所 | Field emission electron source structure and forming method thereof, electron source and microwave tube |
| CN110767519B (en) * | 2019-10-21 | 2022-03-04 | 中国电子科技集团公司第十二研究所 | Field emission electron source structure and forming method thereof, electron source and microwave tube |
| CN112701021A (en) * | 2020-12-28 | 2021-04-23 | 国家纳米科学中心 | Structure and method for regulating and controlling cold cathode electron source side emission |
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Open date: 20061011 |