CN1796956A - Dimesize dynamic piezoresistance, pressure sensor, and manufacturing method - Google Patents
Dimesize dynamic piezoresistance, pressure sensor, and manufacturing method Download PDFInfo
- Publication number
- CN1796956A CN1796956A CN 200410103083 CN200410103083A CN1796956A CN 1796956 A CN1796956 A CN 1796956A CN 200410103083 CN200410103083 CN 200410103083 CN 200410103083 A CN200410103083 A CN 200410103083A CN 1796956 A CN1796956 A CN 1796956A
- Authority
- CN
- China
- Prior art keywords
- sensor
- chip
- pressure
- presser
- presser sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
The invention is a method for manufacturing a micro dynamic pressure resistance pressure sensor, using MEMS silicon micromachining method to manufacture a micro pressure sensitive chip of an E-type silicon cup force sensitive structure; the back of the chip is welded with Pyrex or GG-17 glass ring plate to form a pressure sensitive component; the naked surface of the glass ring is pasted at the upper end of the a ceramic pipe provided with spline groove on the circumferential surface, which are provided with silver baking electrode; the lead of the pressure sensitive component is an inner lead welded on an inner pressure soldered dot on the right side of the chip, and the other end of the inner lead is welded to the upper end of the silver baking electrode, the outer lead is welded to the lower end of the silver baking electrode; the pressure sensitive component is put in the outer pipe of the sensor and seal-boned with the outer pipe; the top of the sensor is welded with a top cover, and a small hole is made in the center of the top cover corresponding the chip; a micro cable drawing out the outer lead is fixed by injection component with a micro air pipe connected with back pressure cavity of the chip and then they are bonded to the bottom end of the outer pipe of the sensor; and the manufactured sensor has very strong light resistance and electromagnetic interference resistance and prevents destructive impacts.
Description
Technical field
The present invention relates to a kind of Dimesize dynamic piezoresistance, pressure sensor and manufacture method thereof, be particularly related to a kind of Dimesize dynamic piezoresistance, pressure sensor and manufacture method thereof, be specially adapted to the dynamic pressure measurement in the aerodynamics test (being commonly called as wind tunnel test) based on MEMS (Micro Electro Mechanical System) silicon body micromachining technology.
Background technology
The making that the silicon body micromachining technology of MEMS (Micro Electro Mechanical System) technology is used for piezoresistance, pressure sensor starts from the later stage seventies 20th century, utilize the piezoresistive effect of silicon, with planar integrated circuit technology certain crystal orientation on silicon chip, the strain detecting voltage dependent resistor (VDR) that certain position is made into methods such as oxide-diffused or ion implantation doping, photoetching, and interconnection constitutes test Hui Sidun strain bridge.Use the double-sided alignment photoetching, silicon 3 D processing technologys such as the anisotropic etch of silicon, the power sensitive film structure that silicon substrate is made into periphery fixed is to replace traditional mechanical lapping processing silicon cup technology.The silicon piezoresistive pressure sensor that the above-mentioned silicon body of this usefulness micromachined technology is made has dwindled chip size, thereby has made the physical dimension of sensor narrow down to φ below 12 when having kept silicon piezoresistive pressure sensor lower range, high sensitivity advantage.
The eighties, U.S. Kulite company, Endevco company etc. utilized this technology, have made the various micro-miniature piezo-resistive sensors of external diameter φ 2-φ 5 to the nineties, and they are used for the aerodynamics test in a large number.
In order to reduce size as far as possible, Kulite company has adopted C type plane film force sensing structure; In order to improve the linearity and the frequency response under the lower range, Endevco company has adopted the twin islet membrane structure, and they all have merits and demerits separately.
In order to realize the switching of microencapsulated and internal lead, they have adopted different separately internal conversion part structures.
When being used for aerodynamic studies, generally require sensor that high Dynamic response is arranged, little chip size is to obtain high Dynamic response first will consider, second what will consider is that the encapsulation of sensor can not form tube chamber, must the presser sensor diaphragm directly in the face of meeting to pressure.The chip of the microsensor of Kulite company has little radial dimension, therefore natural frequency originally is high, but owing to want the front to meet medium, and the medium effect of dust, the influence of photechic effect, have to block a thin calotte that is equipped with array hole with laser when making the Kulite encapsulating products in the place ahead in silicon chip front, and for the ventilation but again the dust protection particle high speed strike the weakest, the easy thin film center place that breaks up, these array holes are commonly called the M type or the S type is distributed in film side along the outer district, and this protection will have a strong impact on uses Dynamic response.
Summary of the invention
In order to address the above problem, the invention provides a kind of based on the MEMS technology can be used for aerodynamics test have lower range, highly sensitive, anti-interference, good Dimesize dynamic piezoresistance, pressure sensor and a manufacture method thereof of wind tunnel test test dynamic property by force.
The present invention for the technical scheme that solves its technical matters and adopt is: a kind of manufacture method of Dimesize dynamic piezoresistance, pressure sensor may further comprise the steps:
1) make the micro pressure sensitive chip with MEMS silicon body micro-machining, this presser sensor chip is miniature E type silicon cup power sensing structure;
2) this presser sensor chip back side welds together with the Pyrex or the GG-17 glass ring plate of static bonding process and optical polish, forms the presser sensor assembly, to strengthen the anti-package strength of this chip;
3) the glass ring exposed surface of this presser sensor assembly is bonded in the porcelain tube upper surface that outer peripheral face is provided with many splines with silicon rubber bonder, is provided with the roasting silver electrode in this spline;
4) to draw be that pressure welding point is welded to the other end of this spun gold internal lead the upper end of this roasting silver electrode with the gold wire bonder spun gold internal lead of burn-oning with microminiature welder in this chip front side to the electricity of the quick resistance bridge of power of this presser sensor assembly;
5) with microminiature welder outer lead is welded to the lower end of this roasting silver electrode, realizes that the lead-in wire switching draws;
6) the presser sensor assembly that will have a spline porcelain tube is packed in the thin-wall stainless steel or kovar alloy pipe as the sensor outer tube, with epoxy adhesive or silicone rubber adhesive with this porcelain tube and this sensor outer tube seal bond;
7) this sensor outer tube top is with top cover of method for laser welding welding, and this top cover central part that should top, presser sensor chip front is provided with an aperture;
8) mini cable that will draw this outer lead is fixed with injection-moulded component with the miniature wireway that cuts down that the back pressure cavity that is communicated with this presser sensor chip, realization and this sensor sheet flatten weighing apparatus, is bonded to this sensor outer tube bottom with epoxide-resin glue again.
Further improvement as Dimesize dynamic piezoresistance, pressure sensor manufacture method of the present invention: this presser sensor chip front is coated with SiO
2Layer and Si
3N
4Layer and central island that film portion that the back side is surrounded by the hard frame of this chip edge and this thin film center leave is partly formed, this central island is coated with SiO
2Layer, the hard frame in this edge is coated with SiO
2Layer and Si
3N
4Layer, this film exposes silicon layer, and the part of the positive corresponding E type central island of this presser sensor chip has the metallization aluminium lamination of vacuum coating or sputter to cover.
Further improvement as Dimesize dynamic piezoresistance, pressure sensor manufacture method of the present invention: this presser sensor chip is of a size of 1.5 * 1.5, film dimensions is 1.0 * 1.0, central island is of a size of 0.7 * 0.7, this chip Diagonal Dimension is less than 2.0, be welded to diameter phi 2.5～φ 2.8 with static bonding process, endoporus φ 0.5～φ 0.8, on the Pyrex of thickness 1～2 or the GG-17 glass ring, this spline porcelain tube external diameter is Φ 2.5-2.8, endoporus Φ 0.5-1, and this porcelain tube outer peripheral face is provided with 4-5 bar keyway, groove width 0.5～0.6, groove depth 0.4～0.6, the external diameter φ 3～φ 3.5 of this sensor outer tube, internal diameter φ 2.4～φ 3.
Further improvement as Dimesize dynamic piezoresistance, pressure sensor manufacture method of the present invention: the cementing agent of gluing between this presser sensor assembly and this spline porcelain tube, use the silicon rubber cementing agent at this transducer range during less than 600Kpa, range is greater than 1MPa modified rubber epoxy adhesive.
The Dimesize dynamic piezoresistance, pressure sensor of the described Dimesize dynamic piezoresistance, pressure sensor manufacture method of a kind of usefulness manufacturing is characterized in that:
1) two sides covers SiO respectively
2Layer and Si
3N
4The presser sensor chip back side of the miniature E type silicon cup power sensing structure design of layer partly is made up of the hard frame of this chip edge film portion that surrounds and the central island that this thin film center leaves, and this central island is coated with SiO
2Layer, the hard frame in this edge is coated with SiO
2Layer and Si
3N
4Layer, this film exposes silicon layer;
2) this presser sensor chip back side is welded with the Pyrex or the GG-17 glass ring plate of optical polish, forms the presser sensor assembly;
3) the glass ring exposed surface of this presser sensor assembly bonds to the porcelain tube upper surface that outer peripheral face is provided with many splines, is provided with the roasting silver electrode in this spline;
4) to draw be that pressure welding point is welded to the other end of this spun gold internal lead the upper end of this roasting silver electrode with the gold wire bonder spun gold internal lead of burn-oning with microminiature welder in this chip front side to the electricity of the quick resistance bridge of power of this presser sensor assembly;
5) solder joint of this spline lower end is welded to outer lead, and the switching that realizes going between is drawn;
6) this presser sensor assembly that has a spline porcelain tube is packed in the thin-wall stainless steel or kovar alloy pipe as the sensor outer tube, this porcelain tube and this sensor outer tube seal bond;
7) top cover of this sensor outer tube top welding is provided with an aperture to this top cover central part that should top, presser sensor chip front;
8) will draw the mini cable of this outer lead and be communicated with this presser sensor chip back pressure cavity, realize that flattening the miniature wireway that cuts down that weighs with this sensor sheet is fixed in injection-moulded component, this injection-moulded component this sensor outer tube bottom that is sealing adhesive.
Further improve as Dimesize dynamic piezoresistance, pressure sensor of the present invention, the part of the positive corresponding E type central island of this presser sensor chip is coated with the metallization aluminium lamination.
Further improve as Dimesize dynamic piezoresistance, pressure sensor of the present invention, presser sensor chip is of a size of 1.5 * 1.5, film dimensions is 1.0 * 1.0, central island is of a size of 0.7 * 0.7, this chip Diagonal Dimension is less than 2.0, this Pyrex or GG-17 glass ring diameter phi 2.5～φ 2.8, endoporus φ 0.5～φ 0.8, on the thickness 1～2, less than 0.5, the orifice size of this top cover central part is φ 0.6～φ 0.8 apart from this top cover in this chip top, and this spline porcelain tube external diameter is Φ 2.5-2.8, endoporus Φ 0.5-1, this porcelain tube outer peripheral face is provided with 4-5 bar keyway, groove width 0.5～0.6, groove depth 0.4～0.6, the external diameter φ 3～φ 3.5 of this sensor outer tube, internal diameter φ 2.4～φ 3.
Further improve as Dimesize dynamic piezoresistance, pressure sensor of the present invention, the film thickness of corresponding pressure range 10,30,50,100,400,600,1000Pa is 10,15,20,25,30,35,40 μ m.
The invention has the beneficial effects as follows:
1) since this presser sensor chip front from piezometric surface less than 1, be that typical standard flushes package design, fully guaranteed the Dynamic response characteristic of sensor, satisfy the response frequency of aerodynamics testing requirements fully;
2) top cap central bore of this pressure transducer over against relative thicker central island rather than the film portion of this presser sensor chip, thereby have very outstanding anti-light interference and can protect the destructiveness bump of the grit that splashes when being used for the test of detonation class.
3) front of this presser sensor chip central island district part has the metallization aluminium lamination of vacuum coating or sputter to cover, and has improved its anti-electromagnetic interference performance and anti-light dirt interference capability in use;
4) adopt island film compound mechanics structural design to solve the problem of lower range sensitivity;
5) owing to adopt silver-colored porcelain tube of roasting and wireway, the interior outer lead switching of this sensor and the measurement of back pressure cavity and communication of test environment atmosphere or differential pressure have been realized.
Description of drawings
Fig. 1 is the SiO that is coated with that the present invention relates to
2Layer and Si
3N
4The silicon chip structural representation of layer;
Fig. 2 is the chip structure synoptic diagram in the film district, photoetching island that the present invention relates to;
Fig. 3 is the chip structure synoptic diagram that the corrosion that the present invention relates to becomes E type silicon cup;
Fig. 4 is the chip structure synoptic diagram that the doping that the present invention relates to forms presser sensor resistance;
Fig. 5 is the chip structure synoptic diagram that the formation that the present invention relates to detects electric bridge;
Fig. 6 is the synoptic diagram that the electrostatic bonding silicon that the present invention relates to and Pyrex glass ring, glued glass ring and spline porcelain tube form sensing assembly and the switching of interior outer lead;
Fig. 7 is a structural representation of the present invention.
Fig. 1 to Fig. 7 is done following further specifying:
1-Si
3N
4Layer 9-mini cable
2-SiO
2Layer 10-roasting honeysuckle flower key porcelain tube
3-film 11-spun gold internal lead
4-edge hard frame 12-injection-moulded component
5-island 13-sensor outer tube
6-Pyrex glass ring plate 14-wireway
7-top cover 17-spline
The 18-outer lead
Embodiment
Adopt MEMS silicon body micromachined technology to make the micro pressure sensitive chip, the unit size of this chip is 1.5 * 1.5, sensitive diaphragm is of a size of 1.0 * 1.0, an island shape hard-core is stayed at the center of diaphragm, hard-core is of a size of 0.7 * 0.7, the quick detection distribution of resistance of power is on the film between the hard frame of hard-core and border, and the position is pressed the method design of E type sensitive chip and determined.Implementation step according to as Fig. 1 to realization shown in Figure 5:
Fig. 1 is that the twin polishing silicon chip of making flexible member covers the thick SiO of 1 μ m with traditional thermal oxidation technique earlier on the two sides in the processing of MEMS technology
2Layer 2, the LPCVD method with standard covers the thick Si of 3000A on the two sides again
3N
4Layer 1 is used the Twi-lithography technology, etches away the silicon chip back side and is equivalent to the Si on island 5 and film 3 positions from now on
3N
4The SiO of layer and membranous part position
2Layer keeps the SiO that the position, island covers
2Layer.
Fig. 3 carries out anisotropic etch with above-mentioned silicon chip silicon body micromachined technology by standard in the KOH corrosive liquid, owing to be reserved in the SiO at position, island
2The corrosion masking action of layer forms island---film composite elastic mechanics sensitive structure.
Fig. 4 is with dual surface lithography technology and ion implantation doping technology, on the island---the front ad-hoc location of film composite elastic chip is made into the force sensing resistance full-bridge.Above-mentioned not in detail the narration all be the integrated circuit technology of standard.
Fig. 5 is a quick chip of miniature power of having finished above-mentioned micromachined technology and silicon integrated circuit technology, its unit size is 1.5 * 1.5, be of a size of 1.0 * 1.0 as the elasticity sensitive thin film, non-linear for improving the mechanics that flat film large deflection causes under the lower range, be 0.7 * 0.7 in the size of the island in the centre of film.
At the described etching SiO of Fig. 2
2Layer and Si
3N
4During layer, the place between chip unit, the silicon slice pattern two sides etches the SiO that is equivalent to V-type graduation groove location simultaneously
2Layer and Si
3N
4Layer pattern.Therefore in the described anisotropic etch of Fig. 3, the graduation groove location of pros and cons respectively erodes away the V-type silicon groove that the degree of depth is 1/3 silicon wafer thickness, top rake corrosive attack because of right-angled intersection groove turning, eliminated the diagonal line of square unit chip, reduced the influence of Diagonal Dimension chip diameter and little encapsulation.
The silicon sheet that is manufactured with hundreds of unit figures is divided, and forming the single length of side is 1.5, but four turnings do not have point near the garden profit, and diameter is less than 2 die.With it and diameter phi 2.5～φ 2.8, endoporus φ 0.5～φ 0.8, the Pyrex of thickness 1～2 or GG-17 glass ring plate 6 electrostatic bondings together, bonding voltage 1000-1200V, bonding temperature 300-320 ℃; With the interior pressure welding point in completed micro pressure sensitive chip front with the burn-on spun gold internal lead 11 of diameter of phi 40-50 μ m of gold wire bonder; And then with another side and a maximum outside diameter Φ 2.5-2.8 of glass ring plate, an end face of the silver-colored porcelain tube 10 of aluminium oxide spline 17 roastings of endoporus Φ 0.5-1 bonds together (look range and select different cementing agents for use); The spun gold internal lead other end of presser sensor chip is welded to the upper end of spline porcelain tube keyway roasting silver electrode with miniature temperature adjustment electric soldering iron; The mini cable 9 of outer lead 18 is welded to the lower end of spline porcelain tube roasting silver electrode.As shown in Figure 6.
Said modules is packed into as external diameter φ 3～φ 3.5, and in the thin-wall stainless steel or kovar alloy pipe of internal diameter φ 2.4～φ 3, it is big or little to look the product range, selects with epoxy adhesive or silicone rubber adhesive adhesive seal;
To be processed with φ 0.6-φ 0.8 center pit, the microsensor top cover 7 of thickness 0.2-0.4 is welded to thin-wall stainless steel or the kovar alloy pipe end face (near sensitive chip one end) of external diameter φ 3～φ 3.5 by laser welding method; With the injection-moulded component of fixedly outer lead and wireway fixedly outer lead and wireway and be bonded to thin-wall stainless steel or the other end of kovar alloy pipe (outer lead exit); Wireway is bonded to porcelain tube back pressure cavity exit, realizes the purpose that sensor back pressure cavity and test environment atmosphere are linked up.As shown in Figure 7.
The range of this microsensor is to be controlled by the film thickness of the quick chip of silicon power of micromachined, because the stress of the island structure of thin film center is concentrated effect, it can improve non-linear under the large deflection, and film can be very thin, when thickness was 10 μ m, the range of sensor was 10KPa; During thickness 15 μ m, transducer range is 30KPa; Range was 50KPa and 100KPa when thickness was 20 μ m and 25 μ m; Range was 400KPa when thickness was 30 μ m; Range was 600KPa when thickness was 35 μ m; Range was 1000KPa when thickness was 40 μ m.Film is finished with anisotropy rot etching technique and the thick four electrodes chemistry of accurate control corrosion device.
The sensitive chip of this sensor from sensor surface less than 1mm, be that typical standard flushes design, fully guaranteed the Dynamic response characteristic of sensor, this sensor of 100KPa is 250KHz through the natural frequency of the actual demarcation of shock tube, range is big more, frequency response is high more, can fully satisfy the response frequency that requires of aerodynamics test.
The entrance pressure mouth of this sensor is the center pit of top cover, it over against be the zone that there is thick island in the silicon microchip back side, therefore very outstanding anti-light interference, the security of particle collision in the anti-medium are arranged.
This sensor silicon chip front contact medium, the front of silicon central island district part have the metallization aluminium lamination of vacuum coating or sputter to cover, and have improved its anti-electromagnetic interference performance and anti-light dirt interference capability in use.
This sensor has been realized the interior outer lead switching of this sensor and the measurement of back pressure cavity and communication of test environment atmosphere or differential pressure owing to adopt silver-colored porcelain tube of roasting and wireway.
This sensor performance is good, stable, antijamming capability is strong, can be used for the purposes of the high sensitivity dynamic test in the aerodynamics test, and market outlook are preferably arranged.
The main performance index of product of the present invention is;
1, range: 0～10KPa, 30KPa, 50KPa, 100KPa, 400KPa, 600KPa, 1000KPa, output sensitivity: 15～100mV
2, physical dimension: external diameter φ 3～φ 3.5; Length 8～40
3, precision: 0.1%～0.5%FS
4, Dynamic response: 130～600KHz
5, time stability :≤0.1mV
6, temperature stability :≤5 * 10
-4/ ℃ FS
Claims (8)
1, a kind of manufacture method of Dimesize dynamic piezoresistance, pressure sensor is characterized in that may further comprise the steps:
1) make the micro pressure sensitive chip with MEMS silicon body micro-machining, this presser sensor chip is miniature E type silicon cup power sensing structure;
2) this presser sensor chip back side welds together with the Pyrex or the GG-17 glass ring plate (6) of static bonding process and optical polish, forms the presser sensor assembly, to strengthen the anti-package strength of this chip;
3) the glass ring exposed surface of this presser sensor assembly is bonded in porcelain tube (10) upper surface that outer peripheral face is provided with many splines (7) with silicon rubber bonder, is provided with the roasting silver electrode in this spline;
4) to draw be that pressure welding point is welded to the other end of this spun gold internal lead the upper end of this roasting silver electrode with the gold wire bonder spun gold internal lead (11) of burn-oning with microminiature welder in this chip front side to the electricity of the quick resistance bridge of power of this presser sensor assembly;
5) with microminiature welder outer lead (18) is welded to the lower end of this roasting silver electrode, realizes that the lead-in wire switching draws;
6) the presser sensor assembly that will have a spline porcelain tube is packed in the thin-wall stainless steel or kovar alloy pipe as sensor outer tube (13), with epoxy adhesive or silicone rubber adhesive with this porcelain tube and this sensor outer tube seal bond;
7) this sensor outer tube top is with a method for laser welding welding top cover (7), and this top cover central part that should top, presser sensor chip front is provided with an aperture;
8) will draw the mini cable (9) of this outer lead and be communicated with this presser sensor chip back pressure cavity, realize that the miniature wireway (14) that cuts down that flattens weighing apparatus with this sensor sheet fixes with injection-moulded component (12), be bonded to this sensor outer tube bottom with epoxide-resin glue again.
2, a kind of Dimesize dynamic piezoresistance, pressure sensor manufacture method as claimed in claim 1 is characterized in that, this presser sensor chip front is coated with SiO
2Layer (2) and Si
3N
4Central island (5) part that film (3) part that layer (1) and the back side are surrounded by the hard frame of this chip edge (4) and this thin film center leave is formed, and this central island is coated with SiO
2Layer, the hard frame in this border is coated with SiO
2Layer and Si
3N
4Layer, this film exposes silicon layer, and the part of the positive corresponding E type central island of this presser sensor chip has the metallization aluminium lamination of vacuum coating or sputter to cover.
3, a kind of Dimesize dynamic piezoresistance, pressure sensor manufacture method as claimed in claim 2, it is characterized in that, this presser sensor chip is 1.5 * 1.5, film is 1.0 * 1.0, central island is 0.7 * 0.7, this chip diagonal line is less than 2.0, is welded to diameter phi 2.5～φ 2.8 with static bonding process, endoporus φ 0.5～φ 0.8, on the Pyrex of thickness 1～2 or the GG-17 glass ring, this spline porcelain tube external diameter is Φ 2.5-2.8, endoporus Φ 0.5-1, and this porcelain tube outer peripheral face is provided with 4-5 bar keyway, groove width 0.5～0.6, groove depth 0.4～0.6, the external diameter φ 3～φ 3.5 of this sensor outer tube, internal diameter φ 2.4～φ 3
4, a kind of Dimesize dynamic piezoresistance, pressure sensor manufacture method as claimed in claim 1, it is characterized in that, the cementing agent of gluing between this presser sensor assembly and this spline porcelain tube, use the silicon rubber cementing agent at this transducer range during less than 600Kpa, range is greater than 1MPa modified rubber epoxy adhesive.
5, a kind of Dimesize dynamic piezoresistance, pressure sensor with right 1 described Dimesize dynamic piezoresistance, pressure sensor manufacture method manufacturing is characterized in that,
1) two sides covers SiO respectively
2Layer (2) and Si
3N
4The presser sensor chip back side of the miniature E type silicon cup power sensing structure design of layer (1) is made up of the hard frame of this chip edge (4) film (3) part that surrounds and central island (5) part that this thin film center leaves, and this central island is coated with SiO
2Layer, the hard frame in this border is coated with SiO
2Layer and Si
3N
4Layer, this film exposes silicon layer;
2) this presser sensor chip back side is welded with the Pyrex or the GG-17 glass ring plate (6) of optical polish, forms the presser sensor assembly;
3) the glass ring exposed surface of this presser sensor assembly bonds to porcelain tube (10) upper surface that outer peripheral face is provided with many splines (17), is provided with the roasting silver electrode in this spline;
4) to draw be that pressure welding point is welded to the other end of this spun gold internal lead the upper end of this roasting silver electrode with the gold wire bonder spun gold internal lead (11) of burn-oning with microminiature welder in this chip front side to the electricity of the quick resistance bridge of power of this presser sensor assembly;
5) solder joint of this spline lower end is welded to outer lead (18), and the switching that realizes going between is drawn;
6) this presser sensor assembly that has a spline porcelain tube is packed in the thin-wall stainless steel or kovar alloy pipe as sensor outer tube (13), this porcelain tube and this sensor outer tube seal bond;
7) this sensor outer tube top welding top cover (7) is provided with an aperture to this top cover central part that should top, presser sensor chip front;
8) will draw the mini cable (9) of this outer lead and be communicated with this presser sensor chip back pressure cavity, realize that flattening the miniature wireway (14) that cuts down that weighs with this sensor sheet is fixed in injection-moulded component (12), this injection-moulded component this sensor outer tube bottom that is sealing adhesive.
6, a kind of Dimesize dynamic piezoresistance, pressure sensor as claimed in claim 5 is characterized in that, the part of the positive corresponding E type central island of this presser sensor chip is coated with the metallization aluminium lamination.
7, as claim 5 or 6 described a kind of Dimesize dynamic piezoresistance, pressure sensors, it is characterized in that, presser sensor chip is 1.5 * 1.5, film is 1.0 * 1.0, central island is 0.7 * 0.7, this chip diagonal line is less than 2.0, this Pyrex or GG-17 glass ring diameter phi 2.5～φ 2.8, endoporus φ 0.5～φ 0.8, on the thickness 1～2, this chip top apart from this top cover less than 0.5, the aperture of this top cover central part is φ 0.6～φ 0.8, this spline porcelain tube external diameter is Φ 2.5-2.8, endoporus Φ 0.5-1, and this porcelain tube outer peripheral face is provided with 4-5 bar keyway, groove width 0.5～0.6, groove depth 0.4～0.6, the external diameter φ 3～φ 3.5 of this sensor outer tube, internal diameter φ 2.4～φ 3.
8, a kind of Dimesize dynamic piezoresistance, pressure sensor as claimed in claim 7 is characterized in that, the film thickness of corresponding pressure range 10,30,50,100,400,600,1000Pa is 10,15,20,25,30,35,40 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410103083 CN1796956A (en) | 2004-12-28 | 2004-12-28 | Dimesize dynamic piezoresistance, pressure sensor, and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410103083 CN1796956A (en) | 2004-12-28 | 2004-12-28 | Dimesize dynamic piezoresistance, pressure sensor, and manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1796956A true CN1796956A (en) | 2006-07-05 |
Family
ID=36818172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410103083 Pending CN1796956A (en) | 2004-12-28 | 2004-12-28 | Dimesize dynamic piezoresistance, pressure sensor, and manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1796956A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1945216B (en) * | 2006-11-03 | 2010-05-12 | 北京航空航天大学 | Three position integrated micro mechanical resonant beam system |
| CN101320081B (en) * | 2008-07-09 | 2010-08-11 | 东南大学 | Micro electro-mechanical system magnetic field sensor and measuring method |
| CN101988859A (en) * | 2009-07-31 | 2011-03-23 | 大陆汽车系统公司 | Low pressure sensor device with high accuracy and high sensitivity |
| CN102295262A (en) * | 2010-06-23 | 2011-12-28 | 昆山双桥传感器测控技术有限公司 | Miniature dynamic piezoresistive pressure sensor and manufacturing method for the same |
| CN102451952A (en) * | 2010-10-25 | 2012-05-16 | 北京卫星环境工程研究所 | Connection process of resistance type sensor and integrated circuit |
| CN102066891B (en) * | 2008-06-18 | 2012-09-05 | 高通Mems科技公司 | Pressure measurement using a mems device |
| CN103674397A (en) * | 2013-12-03 | 2014-03-26 | 新会康宇测控仪器仪表工程有限公司 | High-overload back pressure type absolute-pressure sensor module and manufacturing technology thereof |
| CN104236789A (en) * | 2014-09-24 | 2014-12-24 | 昆山超强光电设备有限公司 | Liquid pressure sensor |
-
2004
- 2004-12-28 CN CN 200410103083 patent/CN1796956A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1945216B (en) * | 2006-11-03 | 2010-05-12 | 北京航空航天大学 | Three position integrated micro mechanical resonant beam system |
| CN102066891B (en) * | 2008-06-18 | 2012-09-05 | 高通Mems科技公司 | Pressure measurement using a mems device |
| CN101320081B (en) * | 2008-07-09 | 2010-08-11 | 东南大学 | Micro electro-mechanical system magnetic field sensor and measuring method |
| CN101988859A (en) * | 2009-07-31 | 2011-03-23 | 大陆汽车系统公司 | Low pressure sensor device with high accuracy and high sensitivity |
| CN102295262A (en) * | 2010-06-23 | 2011-12-28 | 昆山双桥传感器测控技术有限公司 | Miniature dynamic piezoresistive pressure sensor and manufacturing method for the same |
| CN102451952A (en) * | 2010-10-25 | 2012-05-16 | 北京卫星环境工程研究所 | Connection process of resistance type sensor and integrated circuit |
| CN103674397A (en) * | 2013-12-03 | 2014-03-26 | 新会康宇测控仪器仪表工程有限公司 | High-overload back pressure type absolute-pressure sensor module and manufacturing technology thereof |
| CN103674397B (en) * | 2013-12-03 | 2016-04-20 | 新会康宇测控仪器仪表工程有限公司 | High overload back pressure type absolute pressure sensor module and manufacturing process thereof |
| CN104236789A (en) * | 2014-09-24 | 2014-12-24 | 昆山超强光电设备有限公司 | Liquid pressure sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102853950B (en) | Piezoresistive pressure sensor chip adopting face down bonding and preparing method thereof | |
| CN101356426B (en) | Low cost high-voltage sensor | |
| CN102183335B (en) | MEMS pressure sensor and preparation method thereof | |
| CN1244807C (en) | Micro dynamic piezoresistance pressure sensor and manufacturing method thereof | |
| CN103308717B (en) | Optical fiber Fabry-Perot acceleration sensor and manufacturing method thereof | |
| CN109238518B (en) | Micro-polar distance capacitance type force-sensitive sensor and manufacturing method thereof | |
| JPH10502449A (en) | Equipment for mounting absolute pressure sensors | |
| US20050186703A1 (en) | Method for packaging semiconductor chips and corresponding semiconductor chip system | |
| CN101248340A (en) | Pressure sensors and methods of making the same | |
| CN101825505B (en) | MEMS pressure sensitive chip and manufacturing method thereof | |
| CN111591952B (en) | MEMS piezoresistive pressure sensor and preparation method thereof | |
| CN102295262A (en) | Miniature dynamic piezoresistive pressure sensor and manufacturing method for the same | |
| CN1796956A (en) | Dimesize dynamic piezoresistance, pressure sensor, and manufacturing method | |
| CN103837289A (en) | Pressure sensor and manufacturing method thereof | |
| CN108254106A (en) | A kind of silicon silica glass silicon four-layer structure resonant mode MEMS pressure sensor preparation method | |
| CN213812675U (en) | High-temperature pressure sensor chip for realizing leadless package | |
| CN102494832B (en) | Micro-nano film pressure sensor based on transfer print technology and manufacture method thereof | |
| CN103674397B (en) | High overload back pressure type absolute pressure sensor module and manufacturing process thereof | |
| CN114061797B (en) | MEMS piezoresistive pressure sensor with double-bridge structure and preparation method thereof | |
| CN109580077B (en) | Pressure sensor structure and manufacturing method thereof | |
| CN110132395A (en) | A kind of MEMS vector hydrophone having overcurrent protection structure | |
| CN104677529A (en) | Chip structure of pressure gauge and manufacturing method of chip structure | |
| CN1193216C (en) | Capacitive force sensing sensor with tiny interpolar gap and its producing method | |
| CN1834602A (en) | Pressure resistance type high frequency dynamic low voltage sensor | |
| CN202869715U (en) | A piezoresistive pressure sensor chip welded by using flip-chip method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Open date: 20060705 |