CN1750281A - Package structure of photoelectric semiconductor - Google Patents
Package structure of photoelectric semiconductor Download PDFInfo
- Publication number
- CN1750281A CN1750281A CNA2004100797602A CN200410079760A CN1750281A CN 1750281 A CN1750281 A CN 1750281A CN A2004100797602 A CNA2004100797602 A CN A2004100797602A CN 200410079760 A CN200410079760 A CN 200410079760A CN 1750281 A CN1750281 A CN 1750281A
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- China
- Prior art keywords
- heat conduction
- conduction body
- package structure
- lead foot
- photoelectric
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 238000004806 packaging method and process Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 35
- 230000005693 optoelectronics Effects 0.000 claims description 24
- 238000009413 insulation Methods 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000003292 glue Substances 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 230000037361 pathway Effects 0.000 claims description 4
- 229920003023 plastic Polymers 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 9
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 238000005538 encapsulation Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 3
- 230000005622 photoelectricity Effects 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000004100 electronic packaging Methods 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000010009 beating Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011469 building brick Substances 0.000 description 1
- 230000001149 cognitive effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
A packaging structure of a photoelectric semiconductor has the advantages of high heat conduction and formation at one run and more advanced than the known packaged structures, which mainly utilizes the method of formation at one run to improve the package intensity and heat conduction structure to prevent over heat of the wafer
Description
Technical field
The present invention relates to a kind of package structure of photoelectric semiconductor, have high heat conduction and integrated advantage, and it is not yielding, increase the yield and the quality of encapsulation, and when using the wafer package of light-emitting diode, reach the required package requirements of electronic wafer easily, and better, mainly utilize the method for one-body molded material to improve package strength and conductive structure and prevent that the photoelectricity wafer from spending the thermal impact electrooptical device life-span than known encapsulating structure.Mainly utilize the method to set up (as heat-conducting glue or metal-back) of Heat Conduction Material to improve the packaging body thermal conduction characteristic and one-body moldedly prevent the assembly cost waste; And it is better than known luminous element encapsulating structure.
Background technology
In packaging industrial, what attract attention is that optoelectronic semiconductor encapsulates, and light-emitting diode (LED) and optical sensor packaging industrial also are accompanied by light, thin, short, the little and H.D requirement of electronic product and more show important, and the trend that has half share with semiconductor packages is arranged.The encapsulation technology of LED or semiconductor packages industry is more weeded out the old and bring forth the new, as the 2 pin positions and the LED of 4 pin positions, especially the pin position that meet surface mount technology (SMT) specification requirement need in its encapsulating structure more also to represent better encapsulation; In like manner its encapsulation back finished product brightness also is important requirement.
As use popular cognitive, after the electronic packaging technology is meant and completes from semiconductor integrated circuit or light-emitting diode, be loaded among the on line structure with other electronic building brick mutual group, become an electronic product, to reach all processing procedures of particular design function.The main function of electronic packaging has four, is respectively that electric energy transmits (Power Distribution), signal transmits (SignalDistribution), heat leakage (Heat Dissipation) and supports (Protectionand Support) with protection.As be usually used in IC integrated circuit (IC) wafer encapsulation and LED encapsulation.
Please refer to shown in figure one, it is known package structure for LED 1a, flush type emitting body 10a with heat-conducting metal material 30a adhesive light-emitting diode wafer 20a at base cup face 40a (on base 50a), and can connect the encapsulation situation of lead foot 11a, during especially in the face of assembling, traditional package structure for LED 1a is in the face of difficult assembling degree problem and reflector problem, (but lens 12a focuses at point-like can to provide light reflection (as the reflector of flashlight) as reflector, cause diffusing light leak, the light leak that should loose has adverse effect to light focusing), when practical application, can influence the light source precision, and breakaway package (design that base 50a separates with flush type emitting body 10a) yield and assembling are also had negative effect.Therefore be necessary to develop a kind of assembling and concentrated next realistic application requirements of encapsulating structure of brightness of being beneficial to.
Therefore, for present on the market light-emitting diode, easily concentrate light source and tool property easy to assembly (being preferably one-body molded) is the important need of encapsulation process, the inventor reaches the demand through making great efforts to develop the present invention.
Summary of the invention
Main purpose of the present invention is to provide a kind of designs simplification, and can keep high light-emitting diode and the encapsulation structure of optical sensor of concentrating the light source quality, can be used for having the optoelectronic semiconductor (as light-emitting diode) with lens mutual encapsulation demand, low-cost high-quality encapsulation effect can be provided.
In order to achieve the above object, the invention provides a kind of is primary structure and the speciality combination that is easy to heat conduction with the conducting strip material with one-body molded shell and the bearing wafer device that do not have a reflector, cooperate conventional package processing procedure and the low peripheral equipment of processing procedure difficulty, each fabrication steps is combined develop the present invention.
The also available photoelectricity wafer of beating the naked brilliant packaged type of gold thread (or for other kind metal wire) or having encapsulated transparent adhesive tape of the present invention is used in addition, according to circumstances different embodiment can be arranged.
Structure of the present invention comprises: housing have heat conduction body and lead foot, and heat conduction body and lead foot is that electric insulation directly connects or is connected with the heat conduction body with insulation lead foot cover; The optoelectronic semiconductor structure is arranged on this heat conduction body interior one plane with Heat Conduction Material (can be heat-conducting glue or thermal conductive metal plate), for having semiconductor structure luminous or the light sensing ability; And lens devices, constitute by light transmissive material, be located on the heat conduction body, and towards optoelectronic semiconductor.Its middle shell is formed in one.
In order further to understand feature of the present invention and technology contents, see also following about detailed description of the present invention and accompanying drawing, but accompanying drawing only provide with reference to and explanation, be not to be used for the present invention is limited.
Description of drawings
Figure one: be the schematic diagram of known luminescence diode package structure;
Figure two A: be the schematic diagram of TV structure on the embodiment of the invention one;
Figure two B: be the schematic diagram of the embodiment of the invention one forward sight cross-section structure;
Figure two C: be the schematic diagram of the embodiment of the invention one side-looking structure;
Figure three A: be the schematic diagram of TV structure on the embodiment of the invention two;
Figure three B: be the schematic diagram of the embodiment of the invention two forward sight cross-section structures;
Figure three C: be the schematic diagram of the embodiment of the invention two side-looking structures;
Figure four A: be the schematic diagram of TV structure on the embodiment of the invention three;
Figure four B: be the schematic diagram of the embodiment of the invention three forward sight cross-section structures; And
Figure four C: be the schematic diagram of the embodiment of the invention three side-looking structures.
Symbol description in the accompanying drawing
Package structure for LED 1a flush type emitting body 10a
Lead foot 11a lens 12a
LED wafer 20a heat-conducting metal material 30a
Cup face 40a base 50a
Lead foot 14 insulation lead foot covers 16
Execution mode
Principle of the present invention improves to be removed at unnecessary part the light source quality for using lens focus in the mode of a bit, especially to the Optical devices of the regional high brightness of fixing a point (shining uniformly on paper or clearly imaging source is paid attention in the focusing of digital camera as scanner luminosity), and the present invention makes heat conduction efficiency be promoted also ease of assembly with integrated shell.
In addition the present invention also the naked brilliant packaged type of available draw crystal line (as figure two A and figure two B) or the photoelectricity wafer that encapsulated transparent adhesive tape use, according to circumstances different embodiment can be arranged.
Make narration to figure three C and figure four A to the optoelectronic semiconductor encapsulating structure of figure four C to figure two C and similar figure three A with reference to figure two A of the present invention at this; Housing 10, have heat conduction body 12 (material that can be metal, pottery or plastics is connected to housing 10 bottom surfaces with Heat Conduction Material such as thermal conductive metal plate or heat-conducting glue) and lead foot 14, and heat conduction body 12 and lead foot 14 connect directly for electric insulation or are connected with the heat conduction body with insulation lead foot cover 16 (can be pottery makes); Optoelectronic semiconductor structure 20 (can be plural pieces), be arranged on this heat conduction body interior one plane with conducting strip material 30 (can be heat-conducting glue or thermal conductive metal plate) and (be generally lens devices 40 focal zones), for having semiconductor structure luminous or the light sensing ability; And lens devices 40, for light transmissive material constitutes, be located on the heat conduction body 12, and towards optoelectronic semiconductor 20.Its middle shell is formed in one.
The present invention also has the following thin embodiment of portion to change: wherein optoelectronic semiconductor structure 20 can have the light transmission part and the wet contact (as common LED package) of pbz polymer packaging plastic, and base material 32 on this wet contact and the heat conduction body 12 inner planes (be connected with base material to do is communicated with the function of conducting electricity to an available conductive structure (prolong or be connected with conducting strip in addition as lead foot 14)) is electrically connected (circuit is connected), base material 32 (this base material 32 can have flange 34) is fixed in (this base material can replace thermally-conductive sheet material 30 and optoelectronic semiconductor structure 20 hot pressing connection mutually, maybe can see through 30 hot pressing of conducting strip material and connect) on the heat conduction body 12 inner planes; Wherein optoelectronic semiconductor 20 is light-emitting diode or optical sensor; Wherein heat conduction body 12 can be the polymer composite formation, and has Heat Conduction Material arrives the heat conduction body with the thermally conductive pathways that connects optoelectronic semiconductor structure 20 bottom surface (available metal sheet or heat-conducting glue); Wherein heat conduction body 12 can be the ceramic material formation, and has Heat Conduction Material arrives heat conduction body 12 with the thermally conductive pathways that connects optoelectronic semiconductor structure 20 bottom surface; Its middle shell 10 is a metal material; Wherein the optoelectronic semiconductor structure connects lead foot 14 (shown in figure two A or figure two B) to beat conductor wire (as metal wire); Wherein the conducting strip material can be thermal conductive metal plate or silica-based heat-conducting glue; Its middle shell can be metal-back, and the heat conduction body is that powder penetrates, and insulation lead foot cover encases lead foot and makes lead foot and heat conduction body electric insulation; Wherein base material can be the macromolecular material material, and the substrate of macromolecular material can bury resistance or inductance.Wherein the arrangement mode of optoelectronic semiconductor structure is uniformly distributed in (being the plane of lens devices 40 focal zones) on heat conduction body interior one specific plane.
Feature of the present invention and convenience are, the optically focused regional luminance is evenly reached with integrally formed mode (plastics are imbedded metal lead foot frame mode or imbedded metal lead foot frame mode with pottery or metal material) traditional reflector incomplete structure, make encapsulating structure be improved optical property and integrally formed reinforcement property easy to assembly, and it is low and little to traditional LED wafer packing producing line influence that cost is set.Therefore the present invention is provided with easily; And shell structure of the present invention is taken into account luminescent quality and easy to assembly; The present invention is little to the process sequence influence of conventional package program in addition, can dissolve in fully in the middle of the old canned program, and old encapsulation board does not need significantly to revise, and is to meet to make actual state and useful design.
The present invention has following advantage: (1) new processing procedure arranges easily, required standby price and the technology of newly adding Require neither big; (2) one-body molded assembleability is good; (3) conventional package equipment is still available; (4) send out The uniformity of light is good, can cooperate high-quality optical device.
In sum, the present invention is rare deisgn product in fact, has practicality on the industry, new Newness and creativeness meet the patent application main points fully, propose the application according to Patent Law, please know clearly Look into and grant accurate this case patent, to ensure designer's rights and interests.
Claims (12)
1, a kind of package structure of photoelectric semiconductor, it comprises:
Housing has heat conduction body and lead foot, and this housing is formed in one;
The optoelectronic semiconductor structure is arranged on heat conduction body interior one plane with the conducting strip material; And lens devices, constitute by light transmissive material.
2, package structure of photoelectric semiconductor shown in claim 1, wherein heat conduction body and lead foot are that electric insulation directly connects or is connected with the heat conduction body with insulation lead foot cover; And wherein the optoelectronic semiconductor structure is to have semiconductor structure luminous or the light sensing ability; Wherein lens devices is located on the heat conduction body, and towards this optoelectronic semiconductor.
3, package structure of photoelectric semiconductor shown in claim 1, wherein the optoelectronic semiconductor structure has the light transmission part and the wet contact of pbz polymer packaging plastic, and the base material electricity on this wet contact and heat conduction body interior one plane leads to and connects, and base material is fixed on heat conduction body interior one plane.
4, package structure of photoelectric semiconductor shown in claim 1, wherein optoelectronic semiconductor is light-emitting diode or OPTICAL SENSORS.
5, package structure of photoelectric semiconductor shown in claim 1, wherein the heat conduction body is that polymer composite constitutes, and has Heat Conduction Material arrives the heat conduction body with the thermally conductive pathways that connects this optoelectronic semiconductor structure bottom surface.
6, package structure of photoelectric semiconductor shown in claim 1, wherein the heat conduction body is constituted by ceramic material, and has Heat Conduction Material arrives the heat conduction body with the thermally conductive pathways that connects this optoelectronic semiconductor structure bottom surface.
7, package structure of photoelectric semiconductor shown in claim 1, its middle shell are metal material.
8, package structure of photoelectric semiconductor shown in claim 1, wherein the optoelectronic semiconductor structure connects lead foot to beat conductor wire.
9, package structure of photoelectric semiconductor shown in claim 1, wherein the conducting strip material is silica-based heat-conducting glue or thermal conductive metal plate.
10, package structure of photoelectric semiconductor shown in claim 1, its middle shell are metal-back, and the heat conduction body is that powder penetrates, and insulation lead foot cover encases lead foot and makes lead foot and heat conduction body electric insulation.
11, package structure of photoelectric semiconductor shown in claim 3, wherein base material is a macromolecular material, and the substrate of macromolecular material buries resistance or inductance.
12, package structure of photoelectric semiconductor shown in claim 1, wherein the arrangement mode of optoelectronic semiconductor structure is for being uniformly distributed on heat conduction body interior one specific plane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200410079760A CN100576582C (en) | 2004-09-17 | 2004-09-17 | Package structure of photoelectric semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200410079760A CN100576582C (en) | 2004-09-17 | 2004-09-17 | Package structure of photoelectric semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1750281A true CN1750281A (en) | 2006-03-22 |
| CN100576582C CN100576582C (en) | 2009-12-30 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200410079760A Expired - Lifetime CN100576582C (en) | 2004-09-17 | 2004-09-17 | Package structure of photoelectric semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100576582C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101369617B (en) * | 2007-08-13 | 2011-01-12 | 佰鸿工业股份有限公司 | LED device with high cooling property |
| CN109411549A (en) * | 2018-12-07 | 2019-03-01 | 苏州苏纳光电有限公司 | Opto chip encapsulating structure and packaging method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107343129B (en) | 2017-08-16 | 2020-07-24 | 中磊电子（苏州）有限公司 | Monitoring device |
-
2004
- 2004-09-17 CN CN200410079760A patent/CN100576582C/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101369617B (en) * | 2007-08-13 | 2011-01-12 | 佰鸿工业股份有限公司 | LED device with high cooling property |
| CN109411549A (en) * | 2018-12-07 | 2019-03-01 | 苏州苏纳光电有限公司 | Opto chip encapsulating structure and packaging method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100576582C (en) | 2009-12-30 |
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| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
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Granted publication date: 20091230 |