CN1601949B - Dielectric film type dense wavelength division multiplexer filter - Google Patents
Dielectric film type dense wavelength division multiplexer filter Download PDFInfo
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- CN1601949B CN1601949B CN031574912A CN03157491A CN1601949B CN 1601949 B CN1601949 B CN 1601949B CN 031574912 A CN031574912 A CN 031574912A CN 03157491 A CN03157491 A CN 03157491A CN 1601949 B CN1601949 B CN 1601949B
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- air
- division multiplexer
- filter
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- sub
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims abstract description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 13
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- 239000006117 anti-reflective coating Substances 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims 2
- 238000004891 communication Methods 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000005540 biological transmission Effects 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000001659 ion-beam spectroscopy Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 241000283973 Oryctolagus cuniculus Species 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 210000005069 ears Anatomy 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
A dielectric film type dense wavelength division multiplexing filter has a structure that: Sub/(HL)N1H8L(HL) 8HL(HL)N2H6L(HL)9HL(HL)9H4L(HL)9HL(HL)8H2L(HL) 8H0.404H1.21L/Air, wherein H is tantalum pentoxide Ta2O5L is silicon dioxide SiO2The coefficient N1 of the dielectric film layer is 8-11, and the coefficient N2 is 9-11; the other structure of the invention is as follows: Sub/(HL)N3H6L(HL)8HL(HL)9H6L(HL)N4HL(HL)9H4L(HL)9HL(HL)8H2L(HL)8H0.404H1.21L/Air, wherein H is Ta2O5Tantalum pentoxide, L being silicon dioxide SiO2The coefficient N3 of the dielectric film layer is 8-12, and the coefficient N4 is 9-11. The invention provides a filter with excellent performance for the wavelength division multiplexer with the channel spacing of 50GHz by reasonably designing the structure of the dielectric film type dense wavelength division multiplexer filter and correctly controlling the thickness of the film layer, and simultaneously reduces the communication cost.
Description
Technical field
The present invention relates to a kind of dense wave division multiplexer filter, relate in particular to a kind of improvement of medium membranous type dense wave division multiplexer filter construction.
Background technology
Dense wave division multiplexer spare is the core component of wavelength-division multiplex system, and its characteristic quality has determined the performance of whole system to a great extent.According to the manufacture method difference, dense wave division multiplexer spare can be divided into several types, and medium membranous type dense wave division multiplexer is wherein a kind of.Such dense wave division multiplexer utilizes the filter action of multilayer film to carry out multiplexing and demultiplexing, so the dielectric film filter is its most basic element.The passband of filter and resistance band have determined the wave-length coverage of multipling channel, promptly influence smallest passage at interval, and smallest passage are the important factor in order of the maximum multiplexing way of decision dense wavelength division system at interval.Say that in principle the multiplexing number that dense wavelength division multiplexing system allows is high more, communications cost is low more.Therefore, make the broadband filter of function admirable, the multiplexing number for improving wavelength-division multiplex system seems important unusually.
In the prior art, the medium membranous type wave-division multiplexer filter that has the whole bag of tricks to make, as " all-optical network " (Zhang Baofu etc., the People's Telecon Publishing House, 2000.1) disclosed a kind of multilayer dielectricity membranous type wavelength division multiplexer, be to utilize two refractive indexes to be the excellent lens that gradation type distributes to constitute a parallel light path, within the excellent lens of two 1/4 pitches of parallel light path, insert the beam split deielectric-coating, constitute filter.This filter is elementary wavelength division multiplexer, can only realize the interval width that 200GHZ is following.In 100GHZ and the design of 200GHZ wavelength division multiplexing filter sheet structure, adopt three chamber filters more.As if design Sub/ (HL)
6H6L (HL)
144L (LH)
146L (HL)
6H/air, spectral characteristic part accompanying drawing 7.There is ripple in its spectral filtering free transmission range, promptly usually said rabbit ears effect, the transition portion steepness in cut-off wavelength district of this kind design simultaneously and passband district is not enough, influences unlike signal isolation (exist train of signal around).In addition, can also utilize photoperiod grating, Bragg grating to constitute broadband filter, the Bragg-grating structure dense wave division multiplexer is in the laboratory research stage at present, can't practicality and industrialization.Yet, reduce passband at interval owing to need make full use of existing cable, increase multiplexing number, the broadband filter of wavelength division multiplexer of therefore making function admirable is more and more difficult.
Summary of the invention
Technology of the present invention is dealt with problems and is: overcome the deficiencies in the prior art, a kind of medium membranous type dense wave division multiplexer filter that can increase port number, broadband and function admirable is provided.
One of technical solution of the present invention is: a kind of medium membranous type close wave-division multiplexer filter, and its structure is:
Sub/(HL)
N1H8L(HL)
8HL(HL)
N2H6L(HL)
9HL(HL)
9H4L(HL)
9HL(HL)
8H2L(HL)
8H0.404H1.21L/Air
In the formula, Sub is a baseplate material, and Air is the incident medium air, deielectric-coating rete coefficient N1=8～11, and N2=9～11, H is Ta
2O
5(tantalum pentoxide), L are SiO
2(silicon dioxide), the antireflection film layer structure of 0.404H1.21L for being added with by air one end, the antireflective coating layer material has adopted and main film structure same material, and promptly H is tantalum pentoxide Ta
2O
5, L is silicon dioxide SiO
2, this two-layer further raising filter transmission passband transmitance reduces to insert loss, makes the interior transmissison characteristic of passband more level and smooth.
The optical thickness of H and L is respectively (1/4) λ
0(λ
0=1550nm).
Two of technical solution of the present invention is: a kind of medium membranous type dense wave division multiplexer filter plate, and its structure is;
Sub/(HL)
N3H6L(HL)
8HL(HL)
9H6L(HL)
N4HL(HL)
9H4L(HL)
9HL(HL)
8H2L(HL)
8H0.404H1.21L/Air
In the formula, Sub is a baseplate material, and Air is the incident medium air, and H is Ta
2O
5(tantalum pentoxide), L are SiO
2(silicon dioxide), deielectric-coating rete coefficient N3=8～12, N4=9～11, the 0.404H1.21L layer is the antireflective coating structure, and the antireflective coating layer material has adopted and main film structure same material, and promptly H is tantalum pentoxide Ta
2O
5, L is silicon dioxide SiO
2This two-layer further raising filter transmission passband transmitance reduces to insert loss, makes the interior transmissison characteristic of passband more level and smooth.
The optical thickness of H and L is respectively (1/4) λ
0(λ
0=1550nm).
The advantage that the present invention compared with prior art has is as follows:
1. structure of the present invention is four chambeies, and existing structure is three chambeies;
2. the rectangle of four chamber filters with better filter pass band improved the passband effect, reduced the insertion loss;
3. structure of the present invention has added outer antireflective coating, and it is level and smooth to make filter see through passband, eliminates the rabbit ears effect of existing structure.
4. by medium membranous type dense wave division multiplexer filter is carried out reasonable structural design, and controlling diaphragm layer thickness correctly, for channel spacing for the wavelength division multiplexer of 50GHz provides a kind of filter of function admirable, reduced communications cost simultaneously.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention 1;
Fig. 2 is the characteristic curve of the embodiment of the invention 1;
Fig. 3 is the structural representation of the embodiment of the invention 2;
Fig. 4 is the characteristic curve of the embodiment of the invention 2;
Fig. 5 is the structural representation of the embodiment of the invention 3;
Fig. 6 is the characteristic curve of the embodiment of the invention 3.
Fig. 7 is existing three chamber filter design spectral transmittances.
Embodiment
The embodiment of the invention 1 is a kind of band pass filter of full deielectric-coating, its structure as shown in Figure 1, this filter is alternately formed by high index with than the two media material of low-refraction, high index dielectric material H is Ta
2O
5(tantalum pentoxide), its refractive index n
H=2.05～2.06; L is SiO than the low refractive index dielectric material
2(silicon dioxide), its refractive index n
L=1.46.The optical thickness of H and L is respectively (1/4) λ
0, λ
0Be the centre wavelength of filter, as λ
0=1550nm.This full dielectric filter is identical with the Fabry-Perot Lopa Nationality etalon with dielectric reflection film basically, therefore, analysis to Fabry-Perot Lopa Nationality filter also is applicable to the situation of full dielectric filter, calculates channel spacing and passband half-width so utilize Fabry-Perot Lopa Nationality filter characteristic to analyze formula.Because the simple transmission curve of medium Fabry-Perot Lopa Nationality filter entirely is not a desired shapes, therefore designs a kind of structure and be:
Sub/ (HL)
8H8L (HL)
8HL (HL)
9H6L (HL)
9HL (HL)
9H4L (HL)
9HL (HL)
8H2L (HL)
8The full deielectric-coating filter of H0.404H1.21L/Air, wherein H is Ta
2O
5(tantalum pentoxide), L are SiO
2(silicon dioxide), N
1=8, N
2=9, by correct controlling diaphragm layer thickness, obtain desirable characteristic curve at last as shown in Figure 2, its passband half-width 2 Δ λ=0.72nm, the channel of corresponding dense wave division multiplexer is interior every Δ f=50GHz.
This filter Veeco/Ion Tech.Inc SPECTOR of company coating machine, adopt ion beam sputtering technology, substrate high speed rotating, velocity of rotation: 1200 commentaries on classics/min, the thicknesses of layers monitoring good LASER Light Source of light source monochromaticjty, light source monochromaticjty Δ λ/λ＜1/10000.The signal to noise ratio of light signal is better than 10
5All thicknesses of layers adopt transmission mode once to monitor and finish.
As shown in Figure 3, the embodiment of the invention 2 also is a full medium band pass filter, and its structure is:
Sub/(HL)
11H8L(HL)
8HL(HL)
9H6L(HL)
9HL(HL)
9H4L(HL)
9HL(HL)
8H2L(HL)
8H0.404H1.21L/Air
In the formula, H is Ta
2O
5(tantalum pentoxide), L are SiO
2(silicon dioxide), N
1=11, N
2=9, H and L have (1/4) λ respectively
0Optical thickness, λ
0Be the centre wavelength of filter, λ
0=1550nm.The characteristic curve of filter as shown in Figure 4, its passband half-width 2 Δ λ=0.72nm, in the channel of corresponding dense wave division multiplexer every Δ f=50GHz.
This filter Veeco/Ion Tech.Inc SPECTOR of company coating machine, adopt ion beam sputtering technology, substrate high speed rotating, velocity of rotation: 1200 commentaries on classics/min, the thicknesses of layers monitoring good LASER Light Source of light source monochromaticjty, light source monochromaticjty Δ λ/λ＜1/10000.The signal to noise ratio of light signal is better than 10
5All thicknesses of layers adopt transmission mode once to monitor and finish.
As shown in Figure 5, the structure of the embodiment of the invention 3 is:
Sub/(HL)
8H6L(HL)
8HL(HL)
9H6L(HL)
9HL(HL)
9H4L(HL)
9HL(HL)
8H2L(HL)
8H0.404H1.21L/Air
In the formula, H is Ta
2O
5(tantalum pentoxide), N
1=8, N
2=9 filters, L are SiO
2(silicon dioxide), the optical thickness of H and L are respectively (1/4) λ
0, λ
0Be the centre wavelength of filter, the characteristic curve of filter as shown in Figure 6, passband half-width 2 Δ λ=0.72nm, in the channel of corresponding dense wave division multiplexer every Δ f=50GHz.This filter Veeco/Ion Tech.Inc SPECTOR of company coating machine, adopt ion beam sputtering technology, substrate high speed rotating, velocity of rotation: 1200 commentaries on classics/min, the thicknesses of layers monitoring good LASER Light Source of light source monochromaticjty, light source monochromaticjty Δ λ/λ＜1/10000.The signal to noise ratio of light signal is better than 10
5All thicknesses of layers adopt transmission mode once to monitor and finish.
Claims (4)
1. medium membranous type dense wave division multiplexer filter, it is characterized in that: the structure of media coating is:
Sub/(HL)
N1H8L(HL)
8HL(HL)
N2H6L(HL)
9HL(HL)
9H4L(HL)
9HL(HL)
8H2L(HL)
8H0.404H1.21L/Air
In the formula, H is tantalum pentoxide Ta
2O
5, L is silicon dioxide SiO
2, the antireflection film layer knot of 0.404H1.21L for being added with by air one end, Sub is a baseplate material, and Air is the incident medium air, and deielectric-coating rete coefficient N1=8～11, N2=9～11 are corresponding medium membrane stack periodicity.
2. medium membranous type dense wave division multiplexer filter according to claim 1 is characterized in that: described antireflective coating layer material has adopted and main film structure same material, and promptly H is tantalum pentoxide Ta
2O
5, L is silicon dioxide SiO
2
3. medium membranous type dense wave division multiplexer filter, it is characterized in that: the structure of media coating is:
Sub/(HL)
N3H6L(HL)
8HL(HL)
9H6L(HL)
N4HL(HL)
9H4L(HL)
9HL(HL)
8H2L(HL)
8H0.404H1.21L/Air
In the formula, H is Ta
2O
5Tantalum pentoxide, L are SiO
2Silicon dioxide, the antireflection film layer structure of 0.404H1.21L for being added with by air one end, Sub is a baseplate material, and Air is the incident medium air, and deielectric-coating rete coefficient N1=8～11, N2=9～11 are corresponding medium membrane stack periodicity.
4. medium membranous type dense wave division multiplexer filter according to claim 3 is characterized in that: described antireflective coating layer material has adopted and main film structure same material, and promptly H is tantalum pentoxide Ta
2O
5, L is silicon dioxide SiO
2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN031574912A CN1601949B (en) | 2003-09-23 | 2003-09-23 | Dielectric film type dense wavelength division multiplexer filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN031574912A CN1601949B (en) | 2003-09-23 | 2003-09-23 | Dielectric film type dense wavelength division multiplexer filter |
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| Publication Number | Publication Date |
|---|---|
| CN1601949A CN1601949A (en) | 2005-03-30 |
| CN1601949B true CN1601949B (en) | 2010-04-14 |
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|---|---|---|---|
| CN031574912A Expired - Fee Related CN1601949B (en) | 2003-09-23 | 2003-09-23 | Dielectric film type dense wavelength division multiplexer filter |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100386655C (en) * | 2005-10-27 | 2008-05-07 | 亚洲光学股份有限公司 | Three-way optical filter |
| CN112130244B (en) * | 2020-09-29 | 2022-07-19 | 苏州众为光电有限公司 | Ultra-steep broadband optical filter compatible with multiple wavelengths |
| CN113376748B (en) * | 2021-06-17 | 2022-08-02 | 中国科学院半导体研究所 | Composite wave-splitting device of integrated silicon-based Bragg reflector and preparation method thereof |
| CN114959619B (en) * | 2022-06-16 | 2024-01-23 | 安徽信息工程学院 | Optical filter with high signal-to-noise ratio and preparation method and application thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5770270A (en) * | 1997-04-03 | 1998-06-23 | Research Electro-Optics, Inc. | Protective and/or reflectivity enhancement of noble metal |
| CN1406015A (en) * | 2001-08-13 | 2003-03-26 | 鸿富锦精密工业（深圳）有限公司 | Deposition system of close wave-division multiplexer filter |
| CN1417617A (en) * | 2001-11-01 | 2003-05-14 | 鸿富锦精密工业（深圳）有限公司 | Intelligent film filter |
-
2003
- 2003-09-23 CN CN031574912A patent/CN1601949B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5770270A (en) * | 1997-04-03 | 1998-06-23 | Research Electro-Optics, Inc. | Protective and/or reflectivity enhancement of noble metal |
| CN1406015A (en) * | 2001-08-13 | 2003-03-26 | 鸿富锦精密工业（深圳）有限公司 | Deposition system of close wave-division multiplexer filter |
| CN1417617A (en) * | 2001-11-01 | 2003-05-14 | 鸿富锦精密工业（深圳）有限公司 | Intelligent film filter |
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|---|---|
| CN1601949A (en) | 2005-03-30 |
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