CN1697573A - Method for preparing coat type exothermic material of semiconductor impedance - Google Patents
Method for preparing coat type exothermic material of semiconductor impedance Download PDFInfo
- Publication number
- CN1697573A CN1697573A CN 200410037734 CN200410037734A CN1697573A CN 1697573 A CN1697573 A CN 1697573A CN 200410037734 CN200410037734 CN 200410037734 CN 200410037734 A CN200410037734 A CN 200410037734A CN 1697573 A CN1697573 A CN 1697573A
- Authority
- CN
- China
- Prior art keywords
- exothermic material
- coating
- impedance
- semiconductor impedance
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Surface Heating Bodies (AREA)
- Resistance Heating (AREA)
Abstract
The preparation method includes steps: according to needed ratio, mixing high temp resistant resin and Nano ceramics powder evenly; coating the mixture on cleaned high conductive metal surface; through warming and air drying, forming a high temperature resistant and withstanding high voltage insulating layer; next, a layer of semiconductor impedance heating material composed of high temperature resistant resin, semiconductor metal powder, powdery water glass, Nano ceramics powder, high conductive metal powder and metal carbon powder is coated on the said insulating layer, and metal wire is printed; then, through warming and air drying, forming a semiconductor heating layer; finally, coating a insulating layer on the said heating layer, warming and air drying the added insulating layer. Current makes surface on media in class of high conductive metal generate heat. The semiconductor impedance heating material is a directive heating material in a high efficiency.
Description
Technical field
The preparation method of the relevant a kind of high efficiency cloth of coating-type semiconductor impedance exothermic material of the present invention and the raw material of this material are formed.
Background technology
The electrothermal film technology of prior art, it mainly is semiconductor conductive powder and lead oxide with graphite powder, silica, gasification magnesium, silica, mutual blend composition one electrically-conducting paint of the inorganic film forming agent of the multiple oxide of boron oxide and water-miscible organic solvent, the semiconductor electrically-conducting paint that modulation is appropriate, with spraying or printing treatment, directly electrically-conducting paint is sprayed to through cleaning, drying wellhandled dielectric surface, dry through the baking of high temperature again, and handle around knot through high temperature, make the Electric radiant Heating Film raw material constitute the microcosmic energising network of overlap joint in the surface of medium, supply evenly heating.
Though the electrothermal film technology of prior art has the effect of heating, the shortcoming that its tool is following:
1, the electrothermal film technology of prior art, it is the very thin Electric radiant Heating Film of a thickness, therefore, its thermal source produces and only becomes planar conduction, so its efficiency of heating surface is not good.
2, the electrothermal film technology of prior art only can be used for non-conductive class (nonmetal character conduction) and resistant to elevated temperatures medium such as pottery and glass, therefore, make that the efficiency of heating surface is not good, temperature increase slowly and power consumption.
3, the electrothermal film technology of prior art only can be used in non-conductive class and resistant to elevated temperatures medium such as pottery and glass, and therefore, its scope of application is restricted and can't be used in the surface of the high high conduction metal species medium of heat conduction efficiency.
Summary of the invention
In order to reach aforesaid purpose, the present invention develops a kind of preparation method of high efficiency cloth of coating-type semiconductor impedance exothermic material and the composition of this material feedstock.Especially refer to add 40 weight portion left and right sides nano-ceramic powder blendings evenly with 100 weight portion left and right sides fire resistant resins, again it is coated high conduction metal medium surface through clean, through heat air-dry after and form a high temperature resistant and high-tension insulating barrier, be coated with layer of semiconductor impedance exothermic material on this insulation top layer again, this semiconductor impedance exothermic material contains fire resistant resin 25-35%, partly lead metal powder 12-17%, powdery waterglass 12-17%, nanometer porcelain powder 14-20%, height is led metal powder, metal oxide semiconductor and metal carbon dust account for altogether always than 20-24% (all in total weight).
Preferred described semiconductor impedance exothermic material contains fire resistant resin 30%, partly lead metal powder 15%, powdery waterglass 15%, nanometer porcelain powder 18%, height leads metal powder and metal carbon dust composition 22% (all in total weight), these compositions mutually evenly blending form.
Then print metal wire; heat air-dry back forms the semiconductor heating layer; the surface add again cover an insulating barrier heat air-dry as the protection; can be by printing metal wire institute electrical conduction current; make the surface of aforementioned high conduction metal species medium produce heat, become the direct-fired cloth of coating-type semiconductor of high efficiency impedance exothermic material.
The inventive method has following advantage:
1, its semiconductor heating layer has certain thickness, thus thermal source be produced as a three-dimensional kenel rather than laminar, and then make electric heating conversion efficiency height and firing rate fast.
Oxygen does not burn when 2, heating.
3, area of heating surface temperature is even.
4, can process with body surface arbitrarily.
5, can distribute ultrared energy.
6, because of process is coated with a special insulating barrier, and can be used in low-melting high conduction metal species medium, have the good electric current that effectively blocks calandria that reaches of the efficiency of heating surface to reach high conduction metal species medium, and then reach the effect of saving the energy.
7, do not need high temperature to burn, so do not make heat medium produce physical change.
Description of drawings
Fig. 1 for the present invention with the heat conduction efficiency high conduction metal species medium three-dimensional exploded view that carries out application faster;
Fig. 2 is the surface treatment flow chart of the present invention before high conduction metal species dielectric surface application insulating barrier;
Fig. 3 is an application flow chart of the present invention;
Fig. 4 is the flow chart that two kinds of different modes of the present invention are handled.
The figure number part:
1 cleans the surface of high conduction metal species medium, makes the high conduction metal species dielectric surface must not residual greasy dirt and suspended particulates; 10 semiconductor impedance exothermic materials; 101 metal wires; 11 ungrease treatments; 12 chemical surface milled processed; 13 washings; 14 neutralisation treatment; 15 low-temperature electrolytic anodized; 16 washings for the second time; 17 seal processing; 18 hot-water soaks; 19 oven dry; 2 in high conduction metal species dielectric surface use gluing machine or printing treatment, and the heat resistance paint that will contain the porcelain powder evenly is attached to the surface of high conduction metal species medium; 3 use about 400 degrees centigrade high temperature to toast 30 minutes continuously, become a surface of insulating layer after the cooling; 4 utilize gluing machine or printing treatment, and semiconductor impedance exothermic material is printed on the surface of insulating layer; 5 use about 350 degrees centigrade high temperature to toast 30 minutes continuously, and semiconductor impedance exothermic material evenly is attached on the aforementioned dielectric laminar surface; 6 print metal wire on this semiconductor impedance exothermic material layer uses about 350 degrees centigrade high temperature to toast 30 minutes continuously, and metal wire is attached on the semiconductor impedance exothermic material surface; 7 utilize gluing machine or printing treatment, and the heat resistance paint that will contain the porcelain powder evenly is attached to the surface of semiconductor impedance exothermic material, the only firing point of remaining metal wire; 8 use about 350 degrees centigrade high temperature to toast 30 minutes continuously, make the heat resistance paint that contains the porcelain powder evenly be attached to the surface of semiconductor impedance exothermic material after the cooling; 9 insulating barriers; A high conduction metal species medium.
Embodiment
See also Fig. 1 and shown in Figure 3, the present invention be with heat conduction efficiency faster high conduction metal species medium A carry out application, aforesaid semiconductor impedance exothermic material 10 is coated tool conductivity and low-melting high conduction metal species medium A, on the surface as aluminum or aluminum alloy class medium, the problem that makes its melting for the conduction of avoiding power supply and excess temperature, method of the present invention is before coating or printing this semiconductor impedance exothermic material 10, then needing to carry out insulating barrier 9 at this high conduction metal species medium A surface handles, this insulating barrier 9 also adopts the mode of coating or printing to be attached to the surface of high conduction metal species medium A, but before coating or printing, its first step then should clean the surface of high conduction metal species medium A earlier, make high conduction metal species medium A surface must not carry out the surface treatment of residual greasy dirt and suspended particulates, second step is to use gluing machine or printing treatment on high conduction metal species medium A surface, the heat resistance paint that will contain the porcelain powder evenly is attached to the surface of high conduction metal species medium A, third step uses about 400 degrees centigrade high temperature to toast 30 minutes continuously, become insulating barrier 9 surfaces after the cooling, the 4th step is utilized gluing machine or printing treatment, semiconductor impedance exothermic material 10 is printed on insulating barrier 9 surfaces, the 5th step uses about 350 degrees centigrade high temperature to toast 30 minutes continuously, semiconductor impedance exothermic material 10 evenly is attached on aforementioned dielectric layer 9 surface, the 6th step is printed metal wire 101 and is used the baking 30 minutes continuously of about 350 degrees centigrade high temperature on 10 layers of this semiconductor impedance exothermic materials, metal wire 101 is attached on semiconductor impedance exothermic material 10 surfaces, the 7th step is utilized gluing machine or printing treatment, the heat resistance paint that will contain the porcelain powder evenly is attached to the surface of semiconductor impedance exothermic material 10, the firing point of only remaining metal wire 101, the 8th step uses about 350 degrees centigrade high temperature to toast 30 minutes continuously, make the heat resistance paint that contains the porcelain powder evenly be attached to the surface of semiconductor impedance exothermic material 10 after the cooling, and then form an insulating barrier 9 in outermost layer.
Aforementioned first step cleans the surface of high conduction metal species medium A, make the high conduction metal species medium A surface must not residual greasy dirt and the surface treatment of suspended particulates, its program of making the anodized insulation layer comprises: carry out ungrease treatment 11 earlier, carry out chemical surface milled processed 12 again, washing 13, neutralisation treatment 14, low-temperature electrolytic anodized 15, for the second time wash 16, seal and handle 17, hot-water soak 18 and dry 19 programs (as shown in Figure 2), as use gluing machine or printing treatment, when the insulating barrier 9 that will contain fire resistant resin and nano-ceramic powder is attached to high conduction metal species medium A surperficial, need to handle with sandblast processing or other mode that can remove remained on surface greasy dirt and suspended particulates earlier, and, aforesaid low-temperature electrolytic anodized 15 will form an oxide-film in high conduction metal species medium A surface, it also has insulation and resistant to elevated temperatures effect, therefore, the program of this low-temperature electrolytic anodized 15 can select to handle or give up this program according to actual needs, when if high conduction metal species medium A forms the insulating barrier 9 of an oxide-film through low-temperature electrolytic anodized 15 in the surface, then can not need prior to this high temperature resistant and high-tension insulating barrier 9 of high conduction metal species medium A surface coated, and direct coating semiconductor impedance exothermic material 10 (as shown in Figure 4), and, another handling procedure of the present invention also can in when high conduction metal species medium A through low-temperature electrolytic anodized 15 and in high conduction metal species medium A surface form one have the oxide-film of insulation and high temperature resistant effect after, can directly on this oxide-film, print (or attaching) metal wire 101, and then be coated with this semiconductor impedance exothermic material 10, be coated with this insulating barrier 9 in outermost layer more at last.
Therefore, with regard to the explanation of aforesaid handling procedure, the present invention can roughly classify as two simple handling procedures (as shown in Figure 4):
1, high conduction metal species medium A is carried out low-temperature electrolytic anodized 15, make its surface directly form the oxide-film of tool insulation and high-temperature resistant result, coating semiconductor impedance exothermic material 10 thereon in regular turn again, print metal wire 101 and utilize gluing machine or printing treatment, the heat resistance paint that will contain the porcelain powder evenly is attached to the surface of aforementioned exothermic material, the firing point 7 of only remaining metal wire 101.
2, with the surface of high conduction metal species medium A, handle earlier or other can remove the remained on surface greasy dirt and after the grain that suspends handles to sandblast, use gluing machine or printing treatment on high conduction metal species medium A surface, the heat resistance paint that will contain the porcelain powder evenly is attached to the surface of high conduction metal species medium, coating semiconductor impedance exothermic material 10 thereon in regular turn again, print metal wire 101 and utilize gluing machine or printing treatment, the high temperature lacquer that will contain the porcelain powder evenly is attached to the surface of aforementioned exothermic material, the firing point of only remaining metal wire 101.
The composition of aforementioned high efficiency cloth of coating-type semiconductor impedance exothermic material 10 of the present invention, it mainly is the high-temperature resin 30% with percentage by weight, partly lead metal powder 15%, powdery waterglass 15%, nanometer porcelain powder 18%, height is led metal powder, metal oxide semiconductor and metal carbon dust, (according to the ratio of required impedance allotment), account for altogether always than 22%, the air-dry electric heating impedance layer that becomes of heating, semiconductor impedance exothermic material 10 is coated the surface of high conduction metal species medium A in the mode of coating, and then by the surface heating of electric current to this high conduction metal species medium A, obtain the direct-fired cloth of coating-type semiconductor of high efficiency impedance exothermic material 10, high-temperature resin tool is wherein strengthened the characteristic of surface mount, metal oxide semiconductor has the effect of conduction impedance, utilize waterglass to make aforesaid semiconductor metal oxide homogenizing again, simultaneously in wherein adding nanometer porcelain powder with as the insulation material of semiconductor impedance exothermic material 10 and can distribute and reach ultrared energy, effect with fast lifting temperature, and height is wherein led the effect of metal powder as good conductive, and the metal carbon dust is as hindering the conducting coefficient, the effect of its impedance of balance, and the percentage by weight of aforementioned each material can be increased and decreased according to actual needs.
In sum, semiconductor impedance exothermic material of the present invention can be used in low-melting high conduction metal species medium, has the good electric current that effectively blocks calandria that reaches of the efficiency of heating surface and reaches high conduction metal species medium, and then reach the effect of saving the energy.
Claims (10)
1, a kind of preparation method of high efficiency cloth of coating-type semiconductor impedance exothermic material is characterized in that:
It mainly is even according to the blending of the ratio of need with fire resistant resin and nano-ceramic powder; again it is coated high conduction metal species dielectric surface through clean; through heat air-dry after and form a high temperature resistant and high-tension insulating barrier; on this insulation top layer, be coated with one deck again with fire resistant resin; partly lead metal powder; powdery waterglass; nanometer porcelain powder; height leads metal powder and metal carbon dust composition is concocted the semiconductor impedance exothermic material that forms mutually and printed metal wire; heat air-dry back forms the semiconductor heating layer; the surface add again cover an insulating barrier heat air-dry as the protection; and then, produce the direct-fired cloth of coating-type semiconductor of high efficiency impedance exothermic material by printing of the surface heating of metal wire conduction to this high conduction metal species medium.
2, the preparation method of high efficiency cloth of coating-type semiconductor impedance exothermic material as claimed in claim 1 is characterized in that:
The first step adopts the mode of coating or printing insulating barrier to be attached to the surface of high conduction metal species medium, before coating or the printing, then should clean the surface of high conduction metal species medium earlier, second step is to use gluing machine or printing treatment at high conduction metal species dielectric surface, the heat resistance paint that will contain the porcelain powder evenly is attached to the surface of high conduction metal species medium, third step uses 400 degrees centigrade high temperature to toast 30 minutes continuously, become a surface of insulating layer after the cooling, the 4th step is utilized gluing machine or printing treatment, semiconductor impedance exothermic material is printed on the surface of insulating layer, the 5th step uses 350 degrees centigrade high temperature to toast 30 minutes continuously, semiconductor impedance exothermic material evenly is attached on the aforementioned dielectric laminar surface, the 6th step is printed metal wire and is used 350 degrees centigrade high temperature to toast 30 minutes continuously on this semiconductor impedance exothermic material layer, metal wire is attached on the semiconductor impedance exothermic material surface, the 7th step is utilized gluing machine or printing treatment, the heat resistance paint that will contain the porcelain powder evenly is attached to the surface of semiconductor impedance exothermic material, the firing point of remaining metal wire only, the 8th step uses 350 degrees centigrade high temperature to toast 30 minutes continuously, make the heat resistance paint that contains the porcelain powder evenly be attached to the surface of semiconductor impedance exothermic material after the cooling, and then form an insulating barrier in outermost layer.
3, the preparation method of high efficiency cloth of coating-type semiconductor impedance exothermic material as claimed in claim 1, it is characterized in that: also can on high conduction metal species medium, carry out the low-temperature electrolytic anodized, and after high conduction metal species dielectric surface formation one has the oxide-film of insulation and high temperature resistant effect, directly on this oxide-film, print or the attaching metal wire, and then be coated with this semiconductor impedance exothermic material, be coated with this insulating barrier in outermost layer more at last.
4, the manufacture method of high efficiency cloth of coating-type semiconductor impedance exothermic material as claimed in claim 1 is characterized in that: semiconductor impedance exothermic material wherein can be attached to high conduction metal species dielectric surface by press printing.
5, the manufacture method of high efficiency cloth of coating-type semiconductor impedance exothermic material as claimed in claim 1 is characterized in that: high temperature resistant and high-tension insulating barrier wherein can be attached to high conduction metal species dielectric surface by press printing.
6, the preparation method of high efficiency cloth of coating-type semiconductor impedance exothermic material as claimed in claim 3 is characterized in that, it is made anodized insulation layer program and comprises:
Carry out earlier ungrease treatment, again carry out chemical surface milled processed, washing, neutralisation treatment, low-temperature electrolytic anodized, wash, seal for the second time processing, hot-water soak and drying procedure.
7, the preparation method of high efficiency cloth of coating-type semiconductor impedance exothermic material as claimed in claim 1 or 2, it is characterized in that: as using gluing machine or printing treatment, when the insulating barrier that will contain fire resistant resin and nano-ceramic powder is attached to high conduction metal species medium surperficial, need to handle with sandblasting earlier or other mode that can remove remained on surface greasy dirt and suspended particulates be handled.
8, the preparation method of high efficiency cloth of coating-type semiconductor impedance exothermic material as claimed in claim 6 is characterized in that: the program of this low-temperature electrolytic anodized can select to handle or give up this program according to actual needs.
9, the preparation method of high efficiency cloth of coating-type semiconductor impedance exothermic material as claimed in claim 1 or 2, it is characterized in that the raw material of the semiconductor impedance exothermic material that wherein is coated with is composed as follows: by weight percentage for fire resistant resin 25-35%, partly lead metal powder 12-17%, powdery waterglass 12-17%, nanometer porcelain powder 14-20%, height is led metal powder, metal oxide semiconductor and metal carbon dust and is accounted for altogether always than 20-24%.
With aforementioned each material evenly blending in the mode of coating with its surface of coating high conduction metal species medium, the air-dry electric heating impedance layer that promptly becomes of heating.
10, the preparation method of high efficiency cloth of coating-type semiconductor impedance exothermic material as claimed in claim 9 is characterized in that: the percentage by weight of each composition material is fire resistant resin 30%, partly lead metal powder 15%, powdery waterglass 15%, nanometer porcelain powder 18%, height leads metal powder, metal oxide semiconductor and metal carbon dust and accounts for altogether always than 22%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410037734 CN1697573A (en) | 2004-05-10 | 2004-05-10 | Method for preparing coat type exothermic material of semiconductor impedance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410037734 CN1697573A (en) | 2004-05-10 | 2004-05-10 | Method for preparing coat type exothermic material of semiconductor impedance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1697573A true CN1697573A (en) | 2005-11-16 |
Family
ID=35350051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410037734 Pending CN1697573A (en) | 2004-05-10 | 2004-05-10 | Method for preparing coat type exothermic material of semiconductor impedance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1697573A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010009669A1 (en) * | 2008-07-23 | 2010-01-28 | Advanced Materials Enterprises Co., Ltd | Medical warming system with nano-thickness heating element |
| CN105676811A (en) * | 2016-01-08 | 2016-06-15 | 沛顿科技（深圳）有限公司 | Full-automatic monitoring method for baking memory chip |
| CN112929997A (en) * | 2019-12-06 | 2021-06-08 | 周哲明 | Electrothermal film |
-
2004
- 2004-05-10 CN CN 200410037734 patent/CN1697573A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010009669A1 (en) * | 2008-07-23 | 2010-01-28 | Advanced Materials Enterprises Co., Ltd | Medical warming system with nano-thickness heating element |
| CN102105120B (en) * | 2008-07-23 | 2012-11-28 | 高新材料企业有限公司 | Medical warming system with nano-thickness heating element |
| CN105676811A (en) * | 2016-01-08 | 2016-06-15 | 沛顿科技（深圳）有限公司 | Full-automatic monitoring method for baking memory chip |
| CN112929997A (en) * | 2019-12-06 | 2021-06-08 | 周哲明 | Electrothermal film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4808490A (en) | Plasma sprayed film resistor heater | |
| CN107454691B (en) | Heating body | |
| JPH07211505A (en) | Apparatus and method for manufacturing high- temperature conductive resistance coating, medium and article | |
| CN109362133A (en) | Multi-purpose large-power density temperature high performance high Electric radiant Heating Film manufacturing process | |
| CN1106850A (en) | Electrothermal paint | |
| CN111511049A (en) | Heating plate and manufacturing method thereof | |
| KR20220132957A (en) | Composition for heating material, planar heating composite and making method for preparing the same | |
| CN1697573A (en) | Method for preparing coat type exothermic material of semiconductor impedance | |
| RU55241U1 (en) | HEATING ELEMENT | |
| CN102208377A (en) | Radiating unit with antioxidant nano-film and deposition method of antioxidant nano-film | |
| CN106686772A (en) | Making method of high-temperature transparent electrothermal film | |
| CN104926371A (en) | Silicon steam corrosion resistant coating and preparation method thereof | |
| CN112996153A (en) | Graphene heating plate and preparation method and application thereof | |
| CN103333538B (en) | A kind of thermal treatment non-oxidation protective cover and coating method | |
| CN1044746A (en) | A kind of binding type electrically-heating body and manufacturing technology thereof | |
| CN102685943B (en) | Nanometer material electrothermal film | |
| JP2628519B2 (en) | Method for producing electron-electrothermal conversion material and electron-electrothermal conversion material | |
| CN203057553U (en) | Transparent heat-emission film | |
| TW200532029A (en) | Method for high efficiency coating-type semiconductor impedance heating material and composition therefrom | |
| CN2053418U (en) | Binding-type electrically exothermic body | |
| US6835673B1 (en) | Semiconductor impedance thermal film processing process | |
| CN1091566C (en) | Red infrared radiation electrothermal film and its prodn. method | |
| CN1024978C (en) | Method for manufacturing semiconductor heating element | |
| CN1148997C (en) | Electrothermal membrane heating body and its mfg. method | |
| CN1107492A (en) | Electrothermal high-temp. paint |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |