CN1402310A - Cheminomechanical grinding method - Google Patents
Cheminomechanical grinding method Download PDFInfo
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- CN1402310A CN1402310A CN 02140151 CN02140151A CN1402310A CN 1402310 A CN1402310 A CN 1402310A CN 02140151 CN02140151 CN 02140151 CN 02140151 A CN02140151 A CN 02140151A CN 1402310 A CN1402310 A CN 1402310A
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- cmp
- acid
- barrier layer
- chemical assistant
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
A chemicomechanical grinding method is characterized by that a chemical assistant is added to the grinding liquid for barrier layer for becoming it to the grinding liquid for metal layer, so it can remove both barrier layer and metal layer.
Description
The present invention relates to the method for a kind of manufacture of semiconductor, particularly a kind of cmp.
In the processing procedure of ultra-large type integrated circuit (VLSI), cmp (chemical mechanicalpolishing, CMP) can provide the comprehensive planarization of crystal column surface (global planarization), especially after manufacture of semiconductor entered sub-micron (sub-micron) field, chemical mechanical milling method is an indispensable process technique especially.
Chemical mechanical milling method is common in copper damascene (Damascene) processing procedure, and is one of most important key technology in the copper damascene processing procedure.The cmp processing procedure of copper comprises the removal step of copper metal layer and the removal step of barrier layer (barrier).Because the material character of metal level and barrier layer has very big difference, so general copper CMP processing procedure can apply to 2 to 3 kinds of lapping liquids (slurry).Because the character of various lapping liquids and pH-value is different, in the process of conversion lapping liquid, the problem that often has grinding pad (polishing pad) to clean and clean incomplete pH-value concussion (pHshock) of deriving because of grinding pad, this not only makes the CMP processing procedure become comparatively difficult, even can cause the defective of element.
Therefore, the invention provides a kind of chemical and mechanical grinding method, it can reduce the step of cleaning grinding pad, simplifies the cmp processing procedure, and can avoid the pH-value concussion (pH shock) of lapping liquid, and the problems such as element defective that therefore caused.
For realizing purpose of the present invention, the invention provides a kind of method of cmp, it is in the cmp processing procedure, lapping liquid base fluid (slurry base) is provided, and add chemical assistant (reagent) in the mode of on-the-spot (in situ), form grinding liquid for metal layer, so that metal level is ground.After removing metal level, stop to add chemical assistant, single to grind base fluid grinding removal barrier layer.Wherein grinding base fluid is the barrier layer lapping liquid, and chemical assistant is made up of oxidant (oxidizers), chelating agent (chelatingagents) and acid-base buffer (pH buffer solution).
The present invention adds chemical assistant in the barrier layer lapping liquid, make the barrier layer lapping liquid become grinding liquid for metal layer, therefore in the cmp processing procedure, can whether adjust the character of lapping liquid by means of the interpolation of chemical assistant, to remove metal level and barrier layer respectively.So can remove from and know the required complicated step of cleaning grinding pad in the lapping liquid transfer process, and can avoid impacting because of the soda acid that uses different lapping liquids to produce, and the problems such as element defective that therefore caused.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, hereinafter the spy enumerates preferred embodiment, and conjunction with figs., is described in detail below:
The accompanying drawing summary
Fig. 1 and Fig. 2 illustrate a kind of flow chart of chemical and mechanical grinding method according to the preferred embodiment of the invention.
The graphical indicia explanation:
100: work-table of chemicomechanical grinding mill
101: grinding table
102: grinding pad
104: wafer
106: wafer carrier (wafer carrier)
108: the first lapping liquid feed tubes (first slurry delivery pipe)
110: the second lapping liquid feed tubes (second slurry delivery pipe)
112: the direction of rotation of wafer carrier
Preferred embodiment
See also Fig. 1 and Fig. 2, it is the flow chart of a kind of chemical and mechanical grinding method of the preferred embodiment of the present invention.
Please consult Fig. 1 earlier, in a preferred embodiment of the invention, work-table of chemicomechanical grinding mill 100 comprises grinding table 101, grinding pad 102, wafer carrier 106, the first lapping liquid feed tube 108 and second feed tube 110, wherein wafer carrier 106 is that wafer 104 is fixed, and wafer 104 is pressed on the grinding pad 102.When carrying out the cmp processing procedure, lapping liquid feed tube 108 and 110 can be sprayed at lapping liquid on the grinding pad 102 earlier, and wafer carrier 106 meetings of fixing wafer 104 be used the surface of grinding wafer 104 with 112 rotations of certain direction.Work-table of chemicomechanical grinding mill in the present embodiment only is the usefulness as convenient explanation, in fact, is the effect that realizes that the present invention declared, can use the chemical grinding board of any kind of, is not only to be defined in the work-table of chemicomechanical grinding mill described in the present embodiment.
In the present embodiment, be formed with metal level (not shown) on the wafer 104, its material for example is aluminium (aluminun), tungsten (tungsten) or copper (copper) etc., and the metal level below is formed with barrier layer (not shown), its material for example is titanium (Ti), titanium nitride (TiN), tantalum (Ta) or tantalum nitride (TaN).
As shown in Figure 1, during metal level on grinding wafer 104, the first lapping liquid feed tube 108 can spray and grind base fluid (slurry base) on grinding pad 102, and the second lapping liquid feed tube 110 also can spray chemical assistant (reagent) on grinding pad 102, grind base fluid and chemical assistant mixing formation grinding liquid for metal layer this moment, in order to grind the metal level on the wafer 104.
Above-mentioned grinding base fluid for example is business-like barrier layer lapping liquid.And chemical assistant is made up of oxidant, chelating agent and acid-base buffer.Wherein oxidant can be KIO
3, H
2O
2, Fe (NO
3)
3Or Al
2(SO
5)
3Deng, it can become metal ion with burning.Chelating agent can be amino carboxylic acid (aminocarboxylic acid), dicarboxylic acids (dicarboxylic acid), hydroxycarboxylic acid (hydroxycarboxlicacid), polyamines class (polyamines), amine alcohols (aminoalcohol), or the salt of deriving of above-mentioned classes of compounds, this chelating agent can form soluble compound with metal ion.Wherein, amino carboxylic acid is for example EDTA (ethylenediaminetetra-acetic acid) and HEDTA (hydoxyethylethylenediaminetri-acetic acid); Dicarboxylic acids is for example oxalic acid (oxalic acid), malonic acid (malonic acid), succinic acid (succinic acid), maleic acid (maleic acid), fumaric acid (fumaric acid) and phthalic acid (phthalic acid); Hydroxycarboxylic acid is for example tartaric acid (tartaric acid), citric acid (citric acid), malic acid (malic acid) and glucuronic acid (gluconic acid); The polyamines class for example is ethylenediamine (ethylenediamine) and triethylenediamine (triethylene-diamine); And the amine alcohols is for example TEA (triethanol-amine).Acid-base buffer is for example phosphate buffer solution (phosphate buffr saline), its can be when grinding the pH-value of stable metal layer lapping liquid.Generally speaking, grind base fluid with after chemical assistant mixes, its pH value changes smaller or equal to 2, and preferably the variation of pH value is smaller or equal to 1.
As shown in Figure 2, after the metal level on the wafer 104 is removed, then carry out the cmp of barrier layer.This moment the first lapping liquid feed tube 108 still to continue to grind base fluid be that the barrier layer lapping liquid is sprayed on the grinding pad 102, the second lapping liquid feed tube 110 then stops to spray chemical assistant to grinding pad 102.The barrier layer lapping liquid that 100 of work-table of chemicomechanical grinding mill utilize the first lapping liquid feed tube 108 to be provided is removed the barrier layer on the wafer 104.
See also table 1, it represents in this implementation column that a kind of business-like barrier layer lapping liquid is adding before and after the above-mentioned chemical assistant, for the comparison of the grinding rate of copper metal layer and TaN barrier layer.
The different lapping liquids of table 1 are for the comparison of copper metal layer and TaN layer grinding rate
| Grind base fluid+chemical assistant | Grind base fluid |
| The grinding rate of copper metal layer | 3100 /minute | 350 /minute |
| The grinding rate of TaN layer | 930 /minute | 800 /minute |
As shown in table 1, do not add the grinding base fluid of chemical assistant, apparently higher than the grinding rate to copper metal layer, therefore grinding base fluid has the better grinding selectivity to the TaN barrier layer for the grinding rate of TaN barrier layer for it.After grinding base fluid adding chemical assistant, its grinding rate for copper metal layer significantly promotes (350 → 3100A/min), and being significantly higher than its grinding rate (930A/min) to the TaN barrier layer, the grinding base fluid that therefore is mixed with chemical assistant has the better grinding selectivity for copper metal layer.
According to the result of above-mentioned table 1,, can remove metal level and the barrier layer that is formed on the wafer effectively really with the method for cmp provided by the present invention.
According to the chemical and mechanical grinding method that is provided in the above embodiment of the present invention, be to utilize business-like barrier layer lapping liquid as grinding base fluid, whether adjust the character of lapping liquid by means of the interpolation of chemical assistant, with respectively in order to remove metal level and barrier layer, so can remove from and know the required complicated step of cleaning grinding pad in the lapping liquid transfer process, and can avoid impacting, and the problems such as element defective that therefore cause because of the soda acid that uses different lapping liquids to produce.
Though the present invention with preferred embodiment openly as above; right its is not in order to limit the present invention; those skilled in the art; under the situation that does not break away from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, thus protection scope of the present invention when with accompanying Claim the person of being defined be as the criterion.
Claims (27)
1. the method for a cmp comprises the following steps:
Substrate is provided, has been formed with metal level in this substrate, and this metal level below is formed with barrier layer;
Provide and grind base fluid and chemical assistant, in order to grind this metal level; And
Only provide this grinding base fluid, in order to grind this barrier layer;
Wherein this chemical assistant is made up of at least a oxidant and at least a chelating agent.
2. the method for cmp as claimed in claim 1, wherein the material of this metal level is selected from copper, aluminium and tungsten.
3. the method for cmp as claimed in claim 1, wherein the material of this barrier layer is selected from tantalum, tantalum nitride, titanium and titanium nitride.
4. the method for cmp as claimed in claim 1, wherein this grinding base fluid is the barrier layer lapping liquid.
5. the method for cmp as claimed in claim 1, wherein this oxidant is selected from KIO
3, H
2O
2, Fe (NO
3)
3And Al
2(SO
5)
3
6. the method for cmp as claimed in claim 1, wherein this chelating agent is selected from amino carboxylic acid, dicarboxylic acids, hydroxycarboxylic acid, polyamines class, amine alcohols and their salt derivative.
7. the method for cmp as claimed in claim 6, wherein this amino carboxylic acid is selected from the group that comprises EDTA and HEDTA at least.
8. the method for cmp as claimed in claim 6, wherein this dicarboxylic acids is selected from the group that comprises oxalic acid, malonic acid, succinic acid, maleic acid, fumaric acid and phthalic acid at least.
9. the method for cmp as claimed in claim 6, wherein this hydroxycarboxylic acid is selected from the group that comprises tartaric acid, citric acid, malic acid and glucuronic acid at least.
10. the method for cmp as claimed in claim 6, wherein this polyamines class is selected from the group that comprises ethylenediamine and triethylenediamine at least.
11. the method for cmp as claimed in claim 6, wherein this amine alcohols comprises TEA.
12. the method for cmp as claimed in claim 1 wherein should be ground base fluid with after chemical assistant mixes, its pH value difference is different from 2.
13. the method for cmp as claimed in claim 12 wherein should be ground base fluid with after chemical assistant mixes, its pH value difference is different from 1.
14. the method for cmp as claimed in claim 1, wherein this chemical assistant also comprises acid-base buffer.
15. the method for cmp as claimed in claim 1, wherein this acid-base buffer comprises phosphate buffer solution.
16. the method for a cmp includes the following step:
Substrate is provided, is formed with copper metal layer in this substrate, this copper metal layer below is formed with the tantalum nitride barrier layer;
Provide barrier layer lapping liquid and chemical assistant, in order to grind this copper metal layer; And
Only provide this barrier layer lapping liquid, in order to grind this tantalum nitride barrier layer;
Wherein this chemical assistant is made up of oxidant and chelating agent.
17. the method for cmp as claimed in claim 16, wherein this oxidant is selected from KIO
3, H
2O
2, Fe (NO
3)
3And Al
2(SO
5)
3
18. the method for cmp as claimed in claim 16, wherein this chelating agent is selected from amino carboxylic acid, dicarboxylic acids, hydroxycarboxylic acid, polyamines class, amine alcohols and their salt derivative.
19. the method for cmp as claimed in claim 18, wherein this amido carboxylic acid is selected from the group that comprises EDTA and HEDTA at least.
20. the method for cmp as claimed in claim 18, wherein this dicarboxylic acids is selected from the group that comprises oxalic acid, malonic acid, succinic acid, maleic acid, fumaric acid and phthalic acid at least.
21. the method for cmp as claimed in claim 18, wherein this hydroxycarboxylic acid is selected from the group that comprises tartaric acid, citric acid, malic acid and glucuronic acid at least.
22. the method for cmp as claimed in claim 18, wherein this polyamines class is to be selected from the group that comprises ethylenediamine and triethylenediamine at least.
23. the method for cmp as claimed in claim 18, wherein this amine alcohols comprises TEA.
24. the method for cmp as claimed in claim 16 wherein should be ground base fluid with after chemical assistant mixes, its pH value difference is different from 2.
25. the method for cmp as claimed in claim 24 wherein should be ground base fluid with after chemical assistant mixes, its pH value difference is different from 1.
26. the method for cmp as claimed in claim 16, wherein this chemical assistant also comprises acid-base buffer.
27. the method for cmp as claimed in claim 26, wherein this acid-base buffer comprises phosphate buffer solution.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US92242701A | 2001-08-03 | 2001-08-03 | |
| US09/922,427 | 2001-08-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1402310A true CN1402310A (en) | 2003-03-12 |
| CN1236478C CN1236478C (en) | 2006-01-11 |
Family
ID=25447026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02140151 Expired - Lifetime CN1236478C (en) | 2001-08-03 | 2002-07-04 | Cheminomechanical grinding method |
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|---|---|
| CN (1) | CN1236478C (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100363152C (en) * | 2004-03-23 | 2008-01-23 | 力晶半导体股份有限公司 | False making process and grinding pad regulating method for chemomechanical grinding process |
| CN100423202C (en) * | 2006-07-25 | 2008-10-01 | 河北工业大学 | Method for using special chelant for micro electronic |
| CN102157368A (en) * | 2010-02-11 | 2011-08-17 | 中芯国际集成电路制造(上海)有限公司 | Method for removing residues after chemical mechanical polishing |
| CN102044428B (en) * | 2009-10-13 | 2012-06-06 | 中芯国际集成电路制造(上海)有限公司 | Method for thinning wafer |
| JP2015189828A (en) * | 2014-03-27 | 2015-11-02 | 株式会社フジミインコーポレーテッド | polishing composition |
| CN114121647A (en) * | 2022-01-24 | 2022-03-01 | 澳芯集成电路技术(广东)有限公司 | Method for improving chemical mechanical polishing efficiency |
-
2002
- 2002-07-04 CN CN 02140151 patent/CN1236478C/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100363152C (en) * | 2004-03-23 | 2008-01-23 | 力晶半导体股份有限公司 | False making process and grinding pad regulating method for chemomechanical grinding process |
| CN100423202C (en) * | 2006-07-25 | 2008-10-01 | 河北工业大学 | Method for using special chelant for micro electronic |
| CN102044428B (en) * | 2009-10-13 | 2012-06-06 | 中芯国际集成电路制造(上海)有限公司 | Method for thinning wafer |
| CN102157368A (en) * | 2010-02-11 | 2011-08-17 | 中芯国际集成电路制造(上海)有限公司 | Method for removing residues after chemical mechanical polishing |
| JP2015189828A (en) * | 2014-03-27 | 2015-11-02 | 株式会社フジミインコーポレーテッド | polishing composition |
| CN114121647A (en) * | 2022-01-24 | 2022-03-01 | 澳芯集成电路技术(广东)有限公司 | Method for improving chemical mechanical polishing efficiency |
| CN114121647B (en) * | 2022-01-24 | 2022-04-22 | 澳芯集成电路技术(广东)有限公司 | Method for improving chemical mechanical polishing efficiency |
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| Publication number | Publication date |
|---|---|
| CN1236478C (en) | 2006-01-11 |
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Effective date of registration: 20180103 Address after: No. 88 Lianhua Avenue, Jinjiang City, Quanzhou, Fujian Patentee after: FUJIAN JINHUA INTEGRATED CIRCUIT Co.,Ltd. Address before: Hsinchu Science Park, Taiwan, China Patentee before: UNITED MICROELECTRONICS Corp. |
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Granted publication date: 20060111 |
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| CX01 | Expiry of patent term |