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CN1477696A - 在晶粒表面形成结合粘性的晶圆处理方法 - Google Patents

在晶粒表面形成结合粘性的晶圆处理方法 Download PDF

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CN1477696A
CN1477696A CNA021304971A CN02130497A CN1477696A CN 1477696 A CN1477696 A CN 1477696A CN A021304971 A CNA021304971 A CN A021304971A CN 02130497 A CN02130497 A CN 02130497A CN 1477696 A CN1477696 A CN 1477696A
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colloid
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CN1298046C (zh
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林俊宏
黄国樑
陈光辉
周世文
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Chipmos Technologies Inc
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Chipmos Technologies Bermuda Ltd
Chipmos Technologies Inc
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Abstract

一种在晶粒表面形成结合粘性的晶圆处理方法，在晶圆的一表面印刷一层具两阶段特性[two stage]的胶体，之后预烤该晶圆，使该具两阶段特性[two stage]的胶体在常温达到固态不具流动性及粘性以供翻转或粘晶机吸附等加工，在切割成晶粒后，晶粒表面形成有热结合粘性，以粘贴至一基板，该基板可为另一晶粒、印刷电路板、陶瓷电路基板或导线架，以低成本高效率地广泛运用于晶片堆叠或各种封装时基板的粘贴。

Description

在晶粒表面形成结合粘性的晶圆处理方法
技术领域
本发明涉及晶圆在完成集成电路后的处理技术，特别是关于一种在晶粒表面形成结合粘性的晶圆处理方法。
背景技术
在半导体晶圆完成集成电路并切割成晶粒[die]，依封装型态的不同粘贴于各式各样的基板，如粘贴于另一晶粒以形成多晶片堆叠体、粘贴于一印刷电路板以进行球格阵列[Ball Grid Array]的封装或者是粘贴中导线架的晶垫或内引指以进行薄小外观封装[Thin Small OutlinePackage]或四方扁平封装[Quad Flat Package]，习用的晶粒粘着剂为液态热固性银胶(sliver Paste)或是聚亚发胺[polyimide]的固态粘性胶带。
在美国专利第2001/005935号专利中描述一种多晶片模组的组装方法，其先将较大晶片以粘晶机贴附于一基板，再将一较小晶片固定于该较大晶片上，而用以粘固较大晶片与较小晶片的粘着剂为一种液态热固性粘胶或是固态胶带，然而未能揭露粘着剂是先涂施于较小晶片或较大晶片以及粘晶与打线的顺序，实际上，若粘着剂为一种液态热固性粘胶，由于液态热固性粘胶在粘贴时仍具有流动性，故无法预先涂施于较小晶片[上晶片]且容易污染较大晶片[下晶片]的焊垫，同时若欲在较大晶片上印刷液态热固性粘胶时必须在打线之前，因为打线形成的焊线无法再放置网版，使得多晶片封装的加工限制相当多，若粘着剂为一种固态胶带，不但成本较高，在多晶片封装时，固态胶带具有双面粘性，一旦粘贴于较小晶片的下表面，即使得较小晶片具有粘性，如晶片翻转、移动或胶带的成形与定位，不适用于晶圆级的粘性处理，同时为了在每一颗晶片上粘附一胶带所需要的设备与花费时间，均不符成本。
发明内容
本发明的主要目的在于提供一种在晶粒表面形成结合粘性的晶圆处理方法，利用在晶圆上大面积印刷形成一具两阶段特性的粘胶，并预烤该具两阶段特性的粘胶使其达到固态不具有流动性及粘性[B-stage]，在切割后可得到大量复数个具有粘性的晶粒，以降低粘晶成本。
本发明的次一目的在于提供一种在晶粒表面形成结合粘性的晶圆处理方法，利用在晶图上印刷形成一具两阶段特性的粘胶，并预烤该具两阶段特性的粘胶使其在常温达到固态不具有流动性及粘性[B-stage]，在切割后可得到具有热结合粘性的晶粒，其具有良好的可加工性，以供各种型态的半导体封装制造。
为了达到上述的目的，依本发明的在晶粒表面形成结合粘性的晶圆处理方法，首先提供一完成集成电路的半导体晶圆，该晶圆具有一表面，其可为主动表面或非主动表面，在该晶圆的该表面均匀涂布一层具两阶段特性的胶体，如以网版印刷(screen printing)、钢版印刷(stencilPrinting)或离心涂布(spin coating)使该具两阶段性的胶体局部或完全涂布于该晶圆的该表面，较佳地，该具两阶段特性的胶体是局部涂布于该晶圆的该表面，以不覆盖晶圆的切割道或焊垫，之后预烤该晶圆，使该具两阶段特性的胶体在常温达到固态不具流动性及粘性[B-stage]，通常温度约125℃进行预烤1小时，此时，该具两阶段特性的胶体仍未热固化反应而具有热结合的粘性，以供翻转或粘晶机吸附等加工，在切割成晶粒后，得到表面形成有热结合粘性的晶粒，以粘贴至一基板，该基板可为另一晶粒、印刷电路板、陶瓷电路基板或导线架，以低成本高效率地广泛运用于晶片堆叠或各种封装时基板的粘贴。
附图说明
图1：本发明的在晶粒表面形成结合粘性的晶图处理方法的流程图；
图2：依本发明的在晶粒表面形成结合粘性的晶圆处理方法，所提供晶圆的正视图；
图3A至3F：依本发明的第一具体实施例，在晶粒表面形成结合粘性的晶圆处理方法中流程的截面示意图；
图4A至4F：依本发明的第二具体实施例，在晶粒表面形成结合粘性的晶圆处理方法中流程的截面示意图；
图5：依本发明的第三具体实施例，在晶粒表面形成结合粘性的晶圆处理方法中晶圆的非主动表面粘设于定位胶带以供切割的截面示意图；
图6：依本发明的第三具体实施例，在晶粒表面形成结合粘性的晶圆处理方法中已切割的晶粒粘设一导线架的截面示意图；及
图7：依本发明的第三具体实施例，在晶粒表面形成结合粘性的晶圆处理方法中已切割的晶粒应用于一封装结构的截面示意图。
具体实施方式
请参阅所附图式，本发明将列举以下的实施例说明：
如图1所示，本发明的在晶粒表面形成结合粘性的晶圆处理方法包含的主要步骤有：“提供晶圆”11、“涂布具两阶段特性的胶体”12、“预烤晶圆”13、“翻转晶圆”14及“切割晶圆”，其详述如下：
如图2及3A所示，首先在“提供晶圆”11的步骤中提供一晶圆110，该晶圆110具有一形成有集成电路与焊垫115的主动表面112(activesurface)、一对应的非主动表面111(inactive surface)及复数个未分离并而呈一体的晶粒113，其中焊垫115位于晶粒113的周边，在晶粒113四周为笔直的切割道114，依封装制程的需求，晶圆110欲形成粘性的表面可为主动表面112或非主动表面111，在本实施例中，若预定在晶圆110的非主动表面111形成粘性，则该非主动表面111朝上，然后，进行“涂布具两阶段特性的胶体”12的步骤，如图3B所示，以网版印刷(screen printing)、钢版印刷(stencil Printing)或离心涂布(spin coating)方法局部或完全涂布形成一种具两阶段特性(two stage或称为B-stage)的胶体130，其先在晶圆110的非主动表面111放置一网版121，再以刮刀122将该具流动性并具两阶段特性的胶体130印刷至该非主动表面111，在本实施例中，网版121覆盖晶圆110的切割道114，使得该具两阶段特性的胶体130局部印刷于该晶圆110的该非主动表面111而不覆盖切割道114，由于第一实施例中所形成具局部结合粘性的晶粒是供晶片堆叠，故印刷该具两阶段特性的胶体130的厚度约在5-6mil，具两阶段特性的胶体130在不同状态呈现不同特性，其包含有热固性聚合物，如聚亚酰胺[Polyimide]、聚喹啉[Polyquinolin]或苯环丁烯[benzocyclobutene]，以及能够溶解上述热固性树脂的溶剂，如丁内脂[butyrolactorne]与环戊酮[cyclopentanone]的混合溶剂或是1，3，5-三甲基苯〔mesitylene]等，由于该两阶段的胶体130在涂施时具有A阶段[A-stage]的特性，其呈液态并具有适当流动性，使得易于印刷成形。
然后，进行“预烤晶圆”13的步骤，如图3C所示，将晶圆110放置于一烤箱，加热至一适当温虔[约摄氏90-150℃]约一小时，以除去溶剂，此系针对含有环氧化合物的具两阶段特性的胶体130，不同的热固性聚合物应调整其适当的预烤温度及条件，使在晶圆110的非主动表面111上的具两阶段特性的胶体130形成一种不具流动性的干膜，较佳地，另执行一真空干燥加热，以完全去除溶剂，此时，在晶圆110的具两阶段特性的胶体130具有B阶段〔B-stage〕的特性，即在室温下成为不具有粘性的胶膜[Tg≥40℃，Tg为玻璃态转化温度(glass transition temperature)]，可供堆叠搬运或储放，有利于后续封装的加工，然而仍具有热结合[thermalbonding]的粘性。
接着，执行“翻转晶圆”14的步骤，如图3D所示，将晶圆110翻转，使得非主动表面111朝下并贴合至一定位胶带140，该定位胶带140为一种在切割晶圆时常用的晶粒定位胶带，如聚氯乙烯薄膜[polyvinyl chloridemembrane]，其上表面具有粘性并结合至一框架，此时，具两阶段特性的胶体130接触该定位胶带140且粘性由该定位胶带140提供，在固定晶圆110后，执行“切割晶圆”15的步骤，利用切晶机的切割刀具150沿切割道114切割晶圆110，以构成复数个具有热结合粘性的晶粒113，不但可低成本快速提供并可供各种封装使用，例如：如图3E所示，先将另一晶粒160粘固于一基板170，并打线将焊线162电性连接晶粒160的焊垫161至基板170，将该具有热结合粘性的晶粒113以粘晶机[die bonder]吸附起来并以该具两阶段特性的胶体130粘附至另一晶粒160，其热压合温度约120至170℃，仅需数秒的时间，甚至不到一秒即可完成一晶片堆叠体[如图3F所示]，较佳地，即便在粘合后该具两阶段特性的胶体130仍未完全热固化反应，然后，打线将焊线180电性连接晶粒113的焊垫115至基板170，本发明的在晶粒表面形成结合粘性的晶圆处理方法除了可供晶片堆叠粘结外，亦可供一般封装的粘晶结合，在“涂布具两阶段特性的胶体”12的步骤，以离心涂布或全面印刷方法完全涂布形成一层具两阶段特性的胶体于晶圆的非主动表面，并经预烤、翻转跟切割步骤后，得到多个在非主动表面具有热结合粘性的晶粒，以供粘合至一基板，由于具两阶段特性的胶体在预烤后不若习用的银胶般具有高流动。因此，基板的连接垫可更接近晶粒，使得基板的尺寸更进一步缩小，以适用于晶片尺寸封装[Chip Scale Package]。
为使了解本发明不局限晶圆的印刷表面，在第二具体实施例中，如图4A所示，首先提供一晶圆210，该晶圆210具有一形成有焊垫215[或凸块〕的主动表面211、一对应的非主动表面212及复数个晶粒213，其中焊垫215在对应晶粒213的中央位置，该主动表面211朝上，之后，如图4B所示，以网版印刷或钢版印刷方法形成一种具两阶段特性的胶体230于主动表面211，其先在晶圆210的主动表面211放置一网版221，再以刮刀222将该具流动性并具两阶段特性的胶体230印刷至该主动表面212，在本实施例中，网版221覆盖晶圆210的焊垫215，使得该具两阶段特性的胶体230局部印刷于该晶圆210的该主动表面212，其印刷该具两阶段特性的胶体230的厚度约在1-2mil。
然后，如图4C所示，预烤该晶圆210，使在晶圆210的主动表面211上的具两阶段特性的胶体230形成一种不具流动性的干膜，即在室温下成为不具有粘性[Tg≥40℃]的胶膜，可供堆叠搬运或储放，但仍具有热结合[thermal bonding]的粘性。接着，如图4D所示，将晶圆210翻转，使得主动表面211朝下并贴合至一定位胶带240，在固定晶圆210后，利用切割刀具250沿切割道214切割晶圆210，以构成复数个在主动表面211具有热结合粘性的晶粒213，不但可低成本快速提供并可供各种封装使用，例如：如图4E所示，将该具有热结合粘性的晶粒213以粘晶机吸附并以该具两阶段特性的胶体230粘附至一如印刷电路板260或陶瓷电路基板的基板，其热压合温度约120至175℃，仅需数秒的时间，即快速粘合至一基板，并经打线焊线262、压模封胶体263及结合焊球261后，建构成一球格阵列[BGA]的封装结构[如图4F所示]。
此外，在本发明的第三具体实施例中，其前段步骤如同第二具体实施例的图4A至4C，之后，如图5所示，在预烤该晶圆210后，直接以晶圆210的非主动表面212粘贴至一定位胶带240，其晶圆210的主动表面211朝上，在切割成个别的晶粒213后，如图6所示，吸附晶粒213至一载台272，再以一LOC[Lead-On-Chip]导线架的内引指271往下粘贴该具两阶段特性的胶体230，以结合晶片213与具有引脚270的导线架，在打线形成焊线274、压模形成封胶体273与导线架修剪成形之后，而制备一种薄小外观封装〔ThinSmall Outline Package〕或四方扁平封装[Quad Flat Package]的封装结构，如图7所示，因此，本发明的在晶粒表面形成结合粘性的晶圆处理方法可大量并低成本地制造具有热结合粘性的晶粒以供后段的封装制程。
虽然本发明已以较佳实施例揭露如上，然其并非用以限定本发明，任何熟悉此项技艺者，在不脱离本发明之精神和范围内，当可做些许更动与润饰，因此本发明之保护范围当视权利要求书范围所界定者为准。

Claims (9)

1、一种在晶粒表面形成结合粘性的晶圆处理方法，其特征是：其步骤包含有：
提供一晶圆，该晶圆具有一表面；
在该晶圆的该表面涂布一层流动性具两阶段特性的胶体；
预烤该晶圆，使该具两阶段特性的胶体不具流动性；及
切割该晶图，以构成具有结合粘性的晶粒。
2、如权利要求1所述的在晶粒表面形成结合粘性的晶圆处理方法，其特征是：在预烤该晶圆之后，翻转该晶圆，使该具两阶段特性的胶体接触至一定位胶带，以供切割。
3、如权利要求1所述的在晶粒表面形成结合粘性的晶圆处理方法，其特征是：以网版印刷、钢版印刷或离心涂布方法形成该具两阶段特性的胶体。
4、如权利要求1所述的在晶粒表面形成结合粘性的晶圆处理方法，其特征是：该晶圆的该表面为一非主动表面。
5、如权利要求4所述的在晶粒表面形成结合粘性的晶圆处理方法，其特征是：在“涂布一具两阶段特性的胶体”的步骤中，该具两阶段特性的胶体完全形成于该晶圆的该表面。
6、如权利要求1所述的在晶粒表面形成结合粘性的晶圆处理方法，其特征是：该晶圆的该表面为一主动表面。
7、如权利要求1或6所述的在晶粒表面形成结合粘性的晶圆处理方法，其特征是：在“涂布一具两阶段特性的胶体”的步骤中，该具两阶段特性的胶体是局部形成于该晶圆的该表面。
8、如权利要求7所述的在晶粒表面形成结合粘性的晶圆处理方法，其特征是：在“涂布一具两阶段特性的胶体”的步骤中，该具两阶段特性的胶体是不覆盖该晶圆的切割道或焊垫。
9、如权利要求1所述的在晶粒表面形成结合粘性的晶圆处理方法，其特征是：在“切割该晶圆”的步骤后，另包含的步骤有：吸附该晶粒并以该具两阶段特性的胶体粘附至一基板。
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CN112542423A (zh) * 2021-01-07 2021-03-23 扬州杰利半导体有限公司 一种半导体晶粒分离加工工艺
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CN112542423A (zh) * 2021-01-07 2021-03-23 扬州杰利半导体有限公司 一种半导体晶粒分离加工工艺
CN119673787A (zh) * 2024-12-10 2025-03-21 北京芯力技术创新中心有限公司 晶圆上芯粒堆叠方法及半导体器件

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