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CN1326599A - 电压可调谐变抗器和包括这种变抗器的可调谐器件 - Google Patents

电压可调谐变抗器和包括这种变抗器的可调谐器件 Download PDF

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CN1326599A
CN1326599A CN99813275A CN99813275A CN1326599A CN 1326599 A CN1326599 A CN 1326599A CN 99813275 A CN99813275 A CN 99813275A CN 99813275 A CN99813275 A CN 99813275A CN 1326599 A CN1326599 A CN 1326599A
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varactor
dielectric constant
substrate
ferroelectric layer
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路易斯·森古塔
史蒂文·C·斯特沃尔
朱永飞
瑟纳斯·森古塔
鲁纳·H·丘
张虚白
安德雷·克泽勒夫
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BlackBerry RF Inc
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Paratek Microwave Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/18Phase-shifters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/201Filters for transverse electromagnetic waves
    • H01P1/2016Slot line filters; Fin line filters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/18Phase-shifters
    • H01P1/181Phase-shifters using ferroelectric devices

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  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
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Abstract

一种电压可调谐介电变抗器包括:一个基片,具有一个第一介电常数和带有大体平面表面;一个可调谐铁电层,定位在基片的大体平面表面上;及第一和第二电极,定位在相对着基片的大体平面表面的可调谐铁电层的一个表面上。第一和第二电极分离以在其之间形成一个间隙。该变抗器包括一个用来接收一个射频信号的输入和一个用来发送射频信号的输出。施加到电极上的一个偏置电压改变变抗器在其一个输入与一个输出之间的电容。也描述了包括该变抗器的移相器和滤波器。

Description

电压可调谐变抗器和包括 这种变抗器的可调谐器件
本申请要求1998年10月16日提交的美国临时专利申请No.60/104,504的利益。
本发明一般涉及室温电压可调谐变抗器和包括这种变抗器的可调谐器件。
相控阵列天线包括发射相控信号以形成一个无线电波束的大量元件。无线电信号能由各个天线元件的相对定相的主动操纵电子地控制。该电子束控制概念适用于发射机和接收机。相控阵列天线与其机械式对应天线相比就其速度、精度、及可靠性而论是优越的。用其电子扫描对应天线代替万向扫描天线能提供更迅速和准确的目标辨别。借助于一个相控阵列天线系统也能迅速和准确地进行复杂的跟踪练习。
可调节移相器用来控制在相控阵列天线中的波束。以前在该领域的天线包括在美国专利No.5,307,033、5,032,805、和5,561,407中的铁电移相器。这些移相器在一个铁电基片上包括一根或多根微波传输带线作为相位调制元件。通过改变基片上一个电场的强度,能改变铁电基片的电容率。当一个RF信号通过微波传输带线时,基片的电容率调谐导致相位移动。在这些专利中公开的微波传输带移相器由于铁电基片的高介电常数,具有高导体损耗和阻抗匹配问题的缺点。
未来通信将采用宽带跳频技术,从而在带上能传送大量数字数据。用于这些用途的一个关键元件是一个低成本快速作用可调谐滤波器。数字数据能按通过控制可调谐滤波器的电路确定的顺序在一个频带上分布或编码。这允许几个用户在一个公共频率范围上发射和接收。
变抗器能独立地利用,或者能集成到低成本可调谐滤波器中。这些变抗器和滤波器在无数商业和军事用途中,能用在多个频率范围下,包括高于L-带的频率。这些用途包括(a)用于无线局域网络系统的L-带(1-2GHz)可调谐滤波器、个人通信系统、及卫星通信系统,(b)用于对卫星通信和雷达系统的跳频的C-带(4-6GHz)变抗器和可调谐滤波器,(c)用在雷达系统中的X-带(9-12GHz)变抗器和滤波器,(d)用在卫星电视系统中的Ku-带(12-18GHz),及(e)用于卫星通信系统中的KA带可调谐滤波器。
当今使用的普通变抗器是硅和GaAs基二极管。这些变抗器的性能由电容比值Cmax/Cmin、频率范围和品质因数、或规定频率范围下的Q因数(1/tanδ)定义。对于用于频率高达2GHz的这些半导体变抗器的Q因数非常好。然而,在高于2GHz的频率下,这些变抗器的Q因数迅速变坏。事实上,在10GHz下,用于这些变抗器的Q因数通常只有约30。
已经描述了与一个超导元件相结合把一层薄膜铁电陶瓷用作一个电压可调谐元件的变抗器。例如,美国专利No.5,640,042公开了一种薄膜铁电变抗器,该变抗器具有一个载波基片层、一个沉积在基片上的高温超导层、一个沉积在金属层上的薄膜铁电层、及沉积在薄膜铁电层上且与调谐器件中的RF传输线相电气接触地放置的多个金属导电装置。使用与一个超导元件相结合的一个铁电元件的另一种可调谐电容器公开在美国专利No.5,721,194中。
有对这样的变抗器的需要,变抗器能在高于超导所必需的温度下和在高达10GHz和以上的频率下操作,同时保持高Q因数。另外,有对包括这样的变抗器的微波器件的需要。
一种电压可调谐介电变抗器包括:一个基片,具有一个第一介电常数和带有大体平面表面;一个可调谐铁电层,定位在基片的大体平面表面上,可调谐铁电层具有大于第一介电常数的一个第二介电常数;及第一和第二电极,定位在相对着基片的大体平面表面的可调谐铁电层的一个表面上。第一和第二电极分离以形成一个第一间隙。施加到电极上的一个偏置电压改变变抗器在其一个输入与一个输出之间的电容。
本发明也包容包括以上变抗器的移相器。这种移相器的一个实施例包括:一个环形(rat race)耦合器,带有一个RF输入和一个RF输出;第一和第二微波传输带,定位在环形耦合器上;一个第一反射终端,相邻第一微波传输带的一端定位;及一个第二反射终端,相邻第二微波传输带的一端定位,其中第一和第二反射终端每个包括可调谐变抗器之一。
这种移相器的另一个实施例包括:一个微波传输带,带有一个RF输入和一个RF输出;第一和第二径向短线,从微波传输带延伸;一个第一变抗器,定位在第一径向短线内;及一个第二变抗器,定位在第二径向短线内,其中第一和第二变抗器的每一个是以上可调谐变抗器之一。
本发明的平面铁电变抗器能用来在各种微波器件中、和在诸如可调谐滤波器之类的其他器件中产生相位移动。这里的器件在结构上是独特的,并且甚至在大于10GHz的频率下也呈现低的插入损耗。诸器件利用低损耗可调谐厚层或膜式介电元件。
当结合附图阅读时从最佳实施例的如下描述能得到本发明的充分理解,在附图中:
图1是按照本发明建造的一种平面电压可调谐介电变抗器的俯视图;
图2是沿线2-2得到的、图1的变抗器的剖视图;
图3a、3b和3c是曲线图,表明在各种操作频率和间隙宽度下按照本发明建造的电压可调谐介电变抗器的电容和损耗角正切;
图4是带有一个环形混合耦合器、包括按照本发明建造的变抗器的一种模拟反射终端移相器的俯视图;
图5是曲线图,表明在各种频率和偏置电压下由图4的移相器产生的相位移动;
图6是带有按照本发明建造的一种平面变抗器的加载线电路移相器的俯视图;
图7是图7的移相器的等效电路表示;
图8a、8b和8c是曲线图,表明用于图6的加载移相器的模拟性能数据;
图9是带有按照本发明建造的平面变抗器的翅片-线波导管可调谐滤波器的俯视图;及
图10是曲线图,表明对于图9的翅片-线可调谐滤波器的测量数据。
参照附图,图1和2是按照本发明建造的一种变抗器10的俯视和剖视图。变抗器10包括一个带有大体平面上表面14的基片12。一个可调谐铁电层16相邻基片的上表面定位。一对金属电极18和20定位在铁电层的顶部上。基片12由一种具有较低介电常数的材料组成,如MgO、氧化铝、LaAlO3、蓝宝石、或陶瓷。对本发明来说,低介电常数是小于约30的介电常数。可调谐铁电层16由一种具有从约20至约2000范围内的介电常数、且在约10V/μm的偏置电压下具有从约10%至约80%范围内的可调谐能力的材料组成。在该最佳实施例中,该层最好由钛酸钡锶(Barium-Strontium Titanate)BaxSr1-xTiO3(BSTO)、或BSTO合成陶瓷组成,其中x能在从零至一的范围内。这样的BSTO合成物的例子包括但不限于:BSTO-MgO、BSTO-MgAl2O4、BSTO-CaTiO3、BSTO-MgTiO3、BSTO-MgSrZrTiO6、及其组合。在一个最佳实施例中的可调谐层当经受典型直流偏置电压,例如范围从约5伏特至约300伏特的电压时,具有大于100的介电常数。一个宽度g的间隙22形成在电极18与20之间。必须优化间隙宽度,以便增大最大电容Cmax与最小电容Cmin的比值(Cmax/Cmin)并且增大器件的品质因数(Q)。该间隙的宽度对变抗器参数具有最大的影响。由在其下器件具有最大Cmax/Cmin和最小损耗角正切的宽度确定最佳宽度g。
一个可控制电压源24由线26和28连接到电极18和20上。该电压源用来向铁电层供给一个直流偏置电压,由此控制层的介电常数。变抗器也包括一个RF输入30和一个RF输出32。RF输入和输出通过焊接或粘结连接分别连接到电极18和20上。
在最佳实施例中,变抗器可以使用5-50μm的间隙宽度。铁电层的厚度在从约0.1μm至约20μm的范围内。一种密封胶34能定位在间隙中,并且能是具有高介电击穿强度以允许高电压施加而不会跨过间隙起弧的任何非传导材料。在最佳实施例中,密封胶能是环氧树脂或聚氨基甲酸乙酯。
强烈影响变抗器的设计的其他尺寸是图1中所示的间隙长度L。间隙长度L能通过改变电极的端部36和38的长度而调节。长度的变化对变抗器的电容具有强烈影响。对于该参数将优化间隙长度。一旦已经选择间隙宽度,电容就成为长度L的线性函数。对于希望的电容,能用经验、或经计算机模拟确定长度L。
可调谐铁电层的厚度对Cmax/Cmin也具有强烈影响。铁电层的最佳厚度由在其下最大Cmax/Cmin出现的厚度确定。图1和2的变抗器的铁电层能包括一种薄膜、厚膜、或厚层铁电材料,如钛酸钡锶BaxSr1-xTiO3(BSTO)、BSTO和各种氧化物、或具有各种添加掺杂物材料的BSTO合成物。所有这些材料呈现较低的损耗角正切。对于本描述来说,为了在从约1.0GHz至约10GHz的范围内的频率下操作,损耗角正切应在从约0.0001至约0.001的范围内。为了在从约10GHz至约20GHz的范围内的频率下操作,损耗角正切应在从约0.001至约0.01的范围内。为了在从约20GHz至约30GHz的范围内的频率下操作,损耗角正切应在从约0.005至约0.02的范围内。
电极可以以包含一个预定宽度间隙的任何几何尺寸或形状构造。对于本发明中公开的变抗器的电容操纵要求的电流典型地小于1μA。在该最佳实施例中,电极材料是金。然而,也可以使用其他导体,如铜、银或铝。金耐腐蚀,并且能容易地粘结到RF输入和输出上。铜提供高传导率,并且一般涂有用于粘结的金或用于焊接的镍。
图1和2表示一种电压可调谐平面变抗器,该变抗器在一种单层可调谐厚层、厚膜或薄膜电介质上以一个预定间隙距离带有一个平面电极。施加电压产生一个跨过可调谐电介质的间隙的电场,该电场产生变抗器电容的整体变化。间隙的宽度能在从5至50μm的范围内,这取决于性能要求。变抗器也能集成到无数可调谐器件中,如联系变抗器通常使用的那些器件中。
本发明电压可调谐介电变抗器的最佳实施例当在从约1GHz至约40GHz的范围内的频率下操作时,具有在从约50至约10,000范围内的Q因数。对于10和20μm的间隙距离在3、10和20GHz下测量的变抗器的电容(为pF)和损耗因数(tanδ)表示在图3a、3b和3c中。基基于表示在图3a、3b和3c中的数据,用于变抗器的Q近拟如下:在3GHz下为200,在10GHz下为80,在20GHz下为45-55。作为比较,用于GaAS半导体二极管变抗器的典型Q如下:在2GHz下为175,在10GHz下为35,及更高频率下要小得多。因此在大于或等于10GHz的频率下,本发明的变抗器具有好得多的Q因数。
图4表示用在1.8至1.9GHz的操作范围内带有按照本发明建造的变抗器的一种移相器40的俯视图。移相器40包括一个环形耦合器42、两个反射终端44、46及连接到图1中所示而没有表示在图4中的变抗器上的一个偏置电路。反射终端的每一个包括图1和2的一个铁电变抗器、和一个电感器48、50的串联组合。两个直流块52和54分别安装在环形耦合器的输入56和输出58的臂上。直流块可以按照已知技术建造,如通过使用一个安装具有高电容的电容器的表面或一个分布通带滤波器。
在施加变抗器偏置电压0至300伏特直流的范围内,实现对于图4的移相器的试验结果,如图5中所示。品质因数是约110,在1.8至1.9GHz的频率范围上的相对相位移动误差小于3%。移相器的插入损耗是约1.0dB,这包括与金属膜中的误匹配和损耗有关的0.5dB。器件的操作温度是300°K。
图6是基于一个加载线62微波传输带电路的一种10GHz移相器60的俯视图。两个平面铁电变抗器10包括在线62的间隙64、66中。一个RF信号分别经50欧姆微波传输带68和70输入和输出。中心微波传输带在该例子中具有40欧姆阻抗。四分之一波长径向短线72、74、76和78用作阻抗匹配。变抗器由经接触垫80和导线82施加的直流偏压调谐。两个直流块84和86类似于在图4中讨论的那些。图6的移相器的等效电路,没有直流块,表示在图7中。插入损耗的计算值(S21)、反射系数(S11)及对于变抗器电容在从0.4pF至0.8 pF范围内器件的相位移动(ΔΦ)表示在图8a、8b和8c中。对于图6移相器的品质因数在约0.5GHz的频率范围上是180deg/dB。该器件适于其中相位移动要求小于100deg的用途。
图9是带有基于在一个矩形波导管中的对称翅片线的四个铁电变抗器的一种可调谐滤波器88的俯视图。在本发明的该实施例中,通过把几个铁电变抗器安装在一个翅片线波导管上在室温下实现一种电气可调谐滤波器。翅片线构造包括在波导管96的中心处沿其纵向轴线放置的具有0.2mm厚度的三个铜箔板90、92和94。带有短端翅片线谐振器98和100的两块侧板由于与波导管接触而接地。中心板92对于来自波导管的直流电压用云母102和104绝缘,并且用来把控制电压(Ub)施加到可调谐介电变抗器106、108、110和112上。可调谐铁电变抗器焊接于在板90与92之间的翅片线变抗器的端部中。凸缘114和116支撑诸块板。图9的滤波器的频率响应表示在图10中。在调谐AF-0.8GHz(-4%)的频率范围中,滤波器表现出不大于0.9dB的插入损耗(L0)和在L0级下的Δf/f-2.0%的带宽。对于中心频率的反射系数对于调谐范围的任何点不大于20dB。包含在调谐ΔF频率范围内的滤波器的频带Δf的数量是约ΔF/Δf=2。注意偏置电压越高,滤波器的可能调谐越大。
通过利用预定尺寸的低损耗(tanδ<0.02)电介质的独特用途,本发明提供一种超过半导体变抗器的高频(>3GHz)性能的高频大功率变抗器。在本发明中也实现了把这些变抗器应用于可调谐器件中。描述了变抗器在移相器和可调谐滤波器中的特定用途的几个例子。本发明具有多种实际用途,并且公开器件的多种其他修改对于熟悉本专业的技术人员是显然的,而不脱离本发明的精神和范围。另外,本发明的可调谐介电变抗器已经增大了RF功率处理能力,并且降低了功率消耗和成本。
本发明提供能用在室温电压可调谐器件中的电压可调谐厚层、厚膜、薄膜变抗器,这些器件有滤波器、移相器、电压控制振荡器、延迟线、及可调谐谐振器、或其任何组合。为变抗器提供的例子是翅片线可调谐滤波器和移相器。翅片滤波器包括两个或多个变抗器,并且基于在一个矩形波导管中的一根对称翅片线。示范移相器包含带有混合耦合器的反射终端和有平面变抗器并入的加载线电路。示范移相器能在2、10、20、和30GHz的频率下操作。
尽管根据当前是其最佳实施例的例子已经描述了本发明,但能进行这样的实施例的各种修改,而不脱离由权利要求书定义的本发明的范围。

Claims (19)

1.一种电压可调谐介电变抗器,包括:
一个基片,具有一个第一介电常数和带有大体一个平面表面;
一个可调谐铁电层,定位在基片的大体平面表面上,可调谐铁电层具有大于所述第一介电常数的一个第二介电常数;及
第一和第二电极,定位在相对着基片的大体平面表面的可调谐铁电层的一个表面上,所述第一和第二电极分离以在其之间形成一个间隙。
2.根据权利要求1所述的电压可调谐介电变抗器,进一步包括:
在所述间隙中的一种绝缘材料。
3.根据权利要求1所述的电压可调谐介电变抗器,其中可调谐铁电层具有大于约100的介电常数。
4.根据权利要求1所述的电压可调谐介电变抗器,其中基片具有小于约30的介电常数。
5.根据权利要求1所述的电压可调谐介电变抗器,其中可调谐铁电层具有从约20至约2000范围内的介电常数、和在约10V/μm的偏置电压下从约10%至约80%范围内的可调谐能力。
6.根据权利要求1所述的电压可调谐介电变抗器,其中基片包括如下组的一种:MgO、氧化铝、LaAlO3、蓝宝石、和陶瓷。
7.根据权利要求1所述的电压可调谐介电变抗器,其中可调谐铁电层包括如下之一:
一层可调谐铁电厚膜;
一层可调谐铁电厚层陶瓷;及
一层可调谐铁电薄膜。
8.根据权利要求1所述的电压可调谐介电变抗器,其中可调谐铁电包括一个RF输入和一个RF输出以便在一个第一方向经可调谐铁电层通过一个RF信号,及其中间隙在基本上垂直于第一方向的第二方向延伸。
9.一种反射终端移相器,包括:
一个环形耦合器,带有一个RF输入和一个RF输出;
第一和第二短线,定位在所述环形耦合器上;
一个第一反射终端,相邻所述第一短线的一端定位;及
一个第二反射终端,相邻所述第二短线的一端定位;
其中所述第一反射终端和所述第二反射终端的每一个包括一个可调谐变抗器,该可调谐变抗器包括:一个基片,具有一个第一介电常数和带有大体平面表面;一个可调谐铁电层,定位在基片的大体平面表面上,可调谐铁电层具有大于所述第一介电常数的一个第二介电常数;及第一和第二电极,定位在相对着基片的大体平面表面的可调谐铁电层的一个表面上,所述第一和第二电极分离以在其之间形成一个间隙。
10.根据权利要求9所述的反射终端移相器,其中可调谐铁电层具有大于约100的介电常数。
11.根据权利要求9所述的反射终端移相器,其中基片具有小于约30的介电常数。
12.根据权利要求9所述的反射终端移相器,其中所述第一反射终端和所述第二反射终端的每一个进一步包括一个与所述变抗器电气串联的电感器。
13.根据权利要求9所述的反射终端移相器,进一步包括:
第一和第二直流块,所述第一直流块定位在所述RF输入中,而所述第二直流块定位在所述RF输出中。
14.一种加载线移相器,包括:
一个微波传输带,带有一个RF输入和一个RF输出;
第一和第二径向短线,从所述微波传输带延伸;
一个第一变抗器,定位在所述第一径向短线中;及
一个第二变抗器,定位在所述第二径向短线中;
其中所述第一变抗器和所述第二变抗器的每一个包括:一个基片,具有一个第一介电常数和带有大体平面表面;一个可调谐铁电层,定位在基片的大体平面表面上,可调谐铁电层具有大于所述第一介电常数的一个第二介电常数;及第一和第二电极,定位在相对着基片的大体平面表面的可调谐铁电层的一个表面上,所述第一和第二电极分离以在其之间形成一个间隙。
15.根据权利要求14所述的加载线移相器,其中可调谐铁电层具有大于约100的介电常数。
16.根据权利要求14所述的加载线移相器,其中基片具有小于约30的介电常数。
17.一种可调谐翅片线滤波器,包括:
一个矩形波导管;
三块导电板,沿波导管的一个纵向轴线定位,其中所述导电板之一与所述波导管绝缘;
两块侧板,具有短端翅片线谐振器,并且接地到波导管上;及
多个变抗器,所述变抗器之一电气耦合到翅片线谐振器的每一个上;
其中可调谐变抗器包括:一个基片,具有一个第一介电常数和带有大体平面表面;一个可调谐铁电层,定位在基片的大体平面表面上,可调谐铁电层具有大于所述第一介电常数的一个第二介电常数;及第一和第二电极,定位在相对着基片的大体平面表面的可调谐铁电层的一个表面上,所述第一和第二电极分离以在其之间形成一个间隙。
18.根据权利要求17所述的可调谐翅片线滤波器,其中可调谐铁电层具有大于约100的介电常数。
19.根据权利要求17所述的可调谐翅片线滤波器,其中基片具有小于约30的介电常数。
CN99813275A 1998-10-16 1999-10-15 电压可调谐变抗器和包括这种变抗器的可调谐器件 Pending CN1326599A (zh)

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WO2000024079A1 (en) 2000-04-27
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CA2346856A1 (en) 2000-04-27
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