CN1326208C - Structure and making method of gallium nitride high electron mobility transistor - Google Patents
Structure and making method of gallium nitride high electron mobility transistor Download PDFInfo
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- CN1326208C CN1326208C CNB200410046195XA CN200410046195A CN1326208C CN 1326208 C CN1326208 C CN 1326208C CN B200410046195X A CNB200410046195X A CN B200410046195XA CN 200410046195 A CN200410046195 A CN 200410046195A CN 1326208 C CN1326208 C CN 1326208C
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Abstract
The present invention relates to a making method of a gallium nitride high electron mobility transistor, which is characterized in that the present invention comprises the following steps: a substrate is selected; an organic matter chemical vapor deposition method is adopted, a low temperature gallium nitride nucleating layer grows on the substrate, the substrate temperature rises, and a gallium nitride high resistance layer with no doping intention grows on a low temperature gallium nitride nucleating layer; the growth chamber pressure is changed, a high mobility gallium nitride layer with no doping intention grows on the gallium nitride high resistance layer with no doping intention; finally, an aluminum gallium nitrogen layer with no doping intention grows.
Description
Technical field
The invention belongs to technical field of semiconductors, be meant a kind of structure and manufacture method of GaN high electron mobility transistor especially.
Background technology
III-V family gallium nitride material owing to have unique physics, chemistry and mechanical performance, has great application prospect at photoelectron and microelectronic as typical case's representative of third generation semi-conducting material.Particularly GaN high electron mobility transistor has high temperature, high frequency, radiation hardness and powerful characteristics, can be operated under the harsh conditions, has broad application prospects in fields such as wireless telecommunications, aircraft, radar and high-temperature electronic devices.
The principle of High Electron Mobility Transistor is: since form heterojunction two kinds of materials can be with discontinuity, formed a triangle potential well at the intersection that can be with, captured a large amount of free carriers, thereby make charge carrier and ionized impurity apart, improved the mobility of material greatly.
Before the present invention, often the structure of the GaN high electron mobility transistor that adopts is: behind grown successively on the substrate low temperature gallium nitride nucleating layer and resistive formation, and the gallium aluminium nitrogen layer of grow doping.For the high electron mobility transistor structure that uses doped structure, mix and to reduce the integrality of material lattice, and cause the generation of ionized impurity, thereby reduce the quality of material, so the raising effect of its mobility is unsatisfactory.
Summary of the invention
The object of the present invention is to provide a kind of structure and manufacture method of GaN high electron mobility transistor, it is by the control growing condition, improvement as the structural design aspect of temperature, pressure and gallium nitride growth comes epitaxial growth to go out the GaN high electron mobility transistor structural material.The present invention has adopted the gallium aluminium nitrogen layer of a novel high mobility gallium nitride transition zone and non-doping to improve the mobility of material.High mobility gallium nitride transition zone provides a good passage for two-dimensional electron gas, the gallium aluminium nitrogen layer of non-doping utilizes the distinctive piezoelectric polarization effect of nitride to produce the two-dimensional electron gas of high concentration, and greatly reduced ionized impurity, thereby the mobility and the crystal mass of material have been improved.The present invention can obtain the GaN high electron mobility transistor structural material, has improved the evenness of material surface simultaneously.
The manufacture method of a kind of GaN high electron mobility transistor of the present invention is characterized in that, comprises the steps:
Select a substrate;
Adopt the metal-organic chemical vapor deposition equipment method, one deck low temperature gallium nitride nucleating layer of at first on substrate, growing, growth temperature is 500-600 ℃;
Growth is non-on low temperature gallium nitride nucleating layer then has a mind to the doped gallium nitride resistive formation;
Follow the non-high mobility gallium nitride layer of having a mind to mix of growth on non-doped gallium nitride resistive formation intentionally;
The non-gallium aluminium nitrogen layer of having a mind to mix of growing at last.
Wherein said substrate is sapphire or silicon or carborundum or GaLiO
3, ZnO.
The growth pressure of wherein said low temperature gallium nitride nucleating layer is 400-600torr, growth thickness 0.01-0.06 μ m.
The growth temperature of wherein said non-doped gallium nitride resistive formation intentionally is between 1000-1100 ℃, and growth pressure is 100-300torr, and growth thickness is 1-5 μ m.
The growth temperature of the wherein said non-high mobility gallium nitride layer of having a mind to mix is between 1000-1100 ℃, and growth pressure is about 400-600torr, and growth thickness is 0.1-0.3 μ m.
The growth temperature of the wherein said non-gallium aluminium nitrogen layer of having a mind to mix is between 1000-1100 ℃, and growth pressure is 100-300torr, and growth thickness is between 0.01-0.04 μ m, and the Al component is between 0.15-0.5.
The structure of a kind of GaN high electron mobility transistor of the present invention is characterized in that, comprising:
One substrate;
One low temperature gallium nitride nucleating layer, this layer low temperature gallium nitride nucleating layer be produced on substrate above;
One non-ly has a mind to the doped gallium nitride resistive formation, this is non-have a mind to doped gallium nitride resistive formation be produced on low temperature gallium nitride nucleating layer above;
The one non-high mobility gallium nitride layer of having a mind to mix, this is non-have a mind to mix the high mobility gallium nitride layer be produced on non-have a mind to the doped gallium nitride resistive formation above;
The one non-gallium aluminium nitrogen layer of having a mind to mix, this is non-have a mind to mix the gallium aluminium nitrogen layer be produced on the non-high mobility gallium nitride layer of having a mind to mix above.
Wherein said substrate is sapphire or silicon or carborundum or GaLiO
3, ZnO.
The thickness of the wherein non-high mobility gallium nitride layer of having a mind to mix is 0.01-0.06 μ m.
The growth temperature of the wherein non-high mobility gallium nitride layer of having a mind to mix between 1000-1100 ℃, growth pressure is about 400-600torr, growth thickness is 0.1-0.3 μ m.
Description of drawings
For further specifying content of the present invention, below in conjunction with embodiment the present invention is done a detailed description, wherein:
Fig. 1 is the structural representation of GaN high electron mobility transistor of the present invention;
Fig. 2 is that the mobility of GaN high electron mobility transistor structure of the present invention and carrier concentration are with the variation of temperature curve;
Fig. 3 is the surface roughness RMS test result of GaN high electron mobility transistor structure of the present invention.
Embodiment
Key of the present invention is by the control growing condition, comes epitaxial growth to go out GaN high electron mobility transistor as the optimization of the aspects such as structural design of temperature, pressure and gallium nitride growth.Adopted the gallium aluminium nitrogen layer of a novel high mobility gallium nitride transition zone and non-doping to improve the mobility of material.The effect of high mobility gallium nitride transition zone is to provide a good passage for two-dimensional electron gas.The gallium aluminium nitrogen layer of non-doping has utilized the distinctive piezoelectric polarization effect of nitride material to produce the two-dimensional electron gas of high concentration, owing to do not carry out modulation doping, can greatly reduce ionized impurity, thereby improve the mobility and the crystal mass of material.
See also shown in Figure 1ly, the manufacture method of a kind of GaN high electron mobility transistor of the present invention comprises the steps:
Select a substrate 10, the material of this substrate 10 is sapphire or silicon or carborundum or GaLiO
3, ZnO;
Adopt the metal-organic chemical vapor deposition equipment method, growth one deck low temperature gallium nitride nucleating layer 20 on substrate, the about 500-600 of growth temperature of this low temperature gallium nitride nucleating layer 20 ℃, the about 400-600torr of growth pressure, growth thickness 0.01-0.06 μ m;
Substrate 10 temperature are raise, the non-doped gallium nitride resistive formation 30 intentionally of growth on low temperature gallium nitride nucleating layer 20, the growth temperature of this non-doped gallium nitride resistive formation 30 intentionally is between 1000-1100 ℃, and growth pressure is 100-300torr, and growth thickness is 1-5 μ m; Change growth room's pressure, the non-high mobility gallium nitride layer 40 of having a mind to mix of growth on non-doped gallium nitride resistive formation 30 intentionally, this is non-has a mind to mix the growth temperature of high mobility gallium nitride layer 40 between 1000-1100 ℃, growth pressure is about 400-600torr, and growth thickness is 0.1-0.3 μ m;
The non-gallium aluminium nitrogen layer 50 of having a mind to mix of growing at last, this is non-has a mind to mix the growth temperature of gallium aluminium nitrogen layer 50 between 1000-1100 ℃, and growth pressure is 100-300torr, and growth thickness is between 0.01-0.04 μ m, and the A1 component is between 0.15-0.5.
Please consult shown in Figure 1ly again, the structure of a kind of GaN high electron mobility transistor of the present invention is characterized in that, comprising:
One substrate 10, the material of this substrate 10 are sapphire or silicon or carborundum or GaLiO
3, ZnO;
One low temperature gallium nitride nucleating layer 20, this layer low temperature gallium nitride nucleating layer 20 be produced on substrate 10 above;
One non-ly has a mind to doped gallium nitride resistive formation 30, this is non-have a mind to doped gallium nitride resistive formation 30 be produced on low temperature gallium nitride nucleating layer 20 above;
The one non-high mobility gallium nitride layer 40 of having a mind to mix, this is non-have a mind to mix high mobility gallium nitride layer 40 be produced on non-have a mind to doped gallium nitride resistive formation 30 above;
The one non-gallium aluminium nitrogen layer 50 of having a mind to mix, this is non-have a mind to mix gallium aluminium nitrogen layer 50 be produced on the non-high mobility gallium nitride layer 40 of having a mind to mix above.
The sample that is obtained by above step is carried out test analysis, prove that the new construction GaN high electron mobility transistor material that obtains with the method growth has very high mobility.The two-dimensional electron gas room temperature mobility of this material of alternating temperature HALL test proof is at 1000cm
2/ V.s-2000cm
2Between/the V.s, surface density is greater than 1.0 * 10
13Cm
-2, mobility is greater than 5000cm during 77K
2/ V.s, the two-dimensional electron gas surface density is greater than 1.0 * 10
13Cm
-2(Fig. 2); Atomic force microscope (AFM) method of testing confirms that this material surface roughness (RMS) is less than 0.2nm (Fig. 3).The present invention has reduced technology difficulty, has reduced processing step, has obtained the GaN high electron mobility transistor structural material.
Claims (10)
1. the manufacture method of a GaN high electron mobility transistor is characterized in that, comprises the steps:
Select a substrate;
Adopt the metal-organic chemical vapor deposition equipment method, one deck low temperature gallium nitride nucleating layer of at first on substrate, growing, growth temperature is 500-600 ℃;
Growth is non-on low temperature gallium nitride nucleating layer then has a mind to the doped gallium nitride resistive formation;
Follow the non-high mobility gallium nitride layer of having a mind to mix of growth on non-doped gallium nitride resistive formation intentionally;
The non-gallium aluminium nitrogen layer of having a mind to mix of growing at last.
2, the manufacture method of GaN high electron mobility transistor according to claim 1 is characterized in that, wherein said substrate is sapphire or silicon or carborundum or GaLiO
3, ZnO.
3, the manufacture method of GaN high electron mobility transistor according to claim 1 is characterized in that, the growth pressure of wherein said low temperature gallium nitride nucleating layer is 400-600torr, growth thickness 0.01-0.06 μ m.
4, the manufacture method of GaN high electron mobility transistor according to claim 1, it is characterized in that, the growth temperature of wherein said non-doped gallium nitride resistive formation intentionally is between 1000-1100 ℃, and growth pressure is 100-300torr, and growth thickness is 1-5 μ m.
5, the manufacture method of GaN high electron mobility transistor according to claim 1, it is characterized in that, the growth temperature of the wherein said non-high mobility gallium nitride layer of having a mind to mix is between 1000-1100 ℃, and growth pressure is about 400-600torr, and growth thickness is 0.1-0.3 μ m.
6, the manufacture method of GaN high electron mobility transistor according to claim 1, it is characterized in that, the growth temperature of the wherein said non-gallium aluminium nitrogen layer of having a mind to mix is between 1000-1100 ℃, growth pressure is 100-300torr, growth thickness is between 0.01-0.04 μ m, and the Al component is between 0.15-0.5.
7, a kind of structure of GaN high electron mobility transistor is characterized in that, comprising:
One substrate;
One low temperature gallium nitride nucleating layer, this layer low temperature gallium nitride nucleating layer be produced on substrate above;
One non-ly has a mind to the doped gallium nitride resistive formation, this is non-have a mind to doped gallium nitride resistive formation be produced on low temperature gallium nitride nucleating layer above;
The one non-high mobility gallium nitride layer of having a mind to mix, this is non-have a mind to mix the high mobility gallium nitride layer be produced on non-have a mind to the doped gallium nitride resistive formation above;
The one non-gallium aluminium nitrogen layer of having a mind to mix, this is non-have a mind to mix the gallium aluminium nitrogen layer be produced on the non-high mobility gallium nitride layer of having a mind to mix above.
8, the structure of GaN high electron mobility transistor according to claim 7 is characterized in that, wherein said substrate is sapphire or silicon or carborundum or GaLiO
3, ZnO.
9, the structure of GaN high electron mobility transistor according to claim 7 is characterized in that, the thickness of the wherein non-high mobility gallium nitride layer of having a mind to mix is 0.01-0.06 μ m.
10, the structure of GaN high electron mobility transistor according to claim 7, it is characterized in that, the growth temperature of the wherein non-high mobility gallium nitride layer of having a mind to mix between 1000-1100 ℃, growth pressure is about 400-600torr, growth thickness is 0.1-0.3 μ m.
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| CNB200410046195XA CN1326208C (en) | 2004-06-02 | 2004-06-02 | Structure and making method of gallium nitride high electron mobility transistor |
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| CNB200410046195XA CN1326208C (en) | 2004-06-02 | 2004-06-02 | Structure and making method of gallium nitride high electron mobility transistor |
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| CN1326208C true CN1326208C (en) | 2007-07-11 |
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| CN100452322C (en) * | 2006-01-18 | 2009-01-14 | 中国科学院半导体研究所 | Silion carbide substrate gallium nitride high electronic transport ratio transistor and producing method |
| JP5191221B2 (en) * | 2007-02-23 | 2013-05-08 | 株式会社エヌ・ティ・ティ・ドコモ | Low temperature receiver amplifier |
| CN101266999B (en) * | 2007-03-14 | 2010-05-19 | 中国科学院半导体研究所 | GaN dual heterogeneity node field effect transistor structure and its making method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002057158A (en) * | 2000-08-09 | 2002-02-22 | Sony Corp | Insulating nitride layer and its formation method, and semiconductor device and its manufacturing method |
| US6486502B1 (en) * | 1998-06-12 | 2002-11-26 | Cree, Inc. | Nitride based transistors on semi-insulating silicon carbide substrates |
| JP2003059948A (en) * | 2001-08-20 | 2003-02-28 | Sanken Electric Co Ltd | Semiconductor device and production method therefor |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6486502B1 (en) * | 1998-06-12 | 2002-11-26 | Cree, Inc. | Nitride based transistors on semi-insulating silicon carbide substrates |
| JP2002057158A (en) * | 2000-08-09 | 2002-02-22 | Sony Corp | Insulating nitride layer and its formation method, and semiconductor device and its manufacturing method |
| JP2003059948A (en) * | 2001-08-20 | 2003-02-28 | Sanken Electric Co Ltd | Semiconductor device and production method therefor |
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