CN1358690A - Method for prepairng TiB2-BN conductive composite material - Google Patents
Method for prepairng TiB2-BN conductive composite material Download PDFInfo
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- CN1358690A CN1358690A CN 01133505 CN01133505A CN1358690A CN 1358690 A CN1358690 A CN 1358690A CN 01133505 CN01133505 CN 01133505 CN 01133505 A CN01133505 A CN 01133505A CN 1358690 A CN1358690 A CN 1358690A
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Abstract
The conductive ceramic material with resistance to high temp., resistance to corrosion and resistance to thermal impact is made up conductive phase TiB2 (40-58 wt%), non-conductive phase BN (42-60 wt%), additive AlN (0-10 wt%) and SiC (0-5 wt%) and induction thermocompression sintering process or powered pressure sintering process at 1700-2000 deg.C. The main raw material TiB2 is prepared by combustion reduction and synthesis process (Patent Application No.01128497.8), it possesses higher sintering activity, so can greatly reduce sintering temp. Said invented composite material can be made into ceramic crucible for surface metallation of various materials and components, and features stable electric resistivity and long service life.
Description
Technical field
The invention belongs to ceramic composite and manufacturing process thereof.TiB particularly
2Ceramic composite.
Background technology
TiB
2Pottery is important new engineering material, has many important physics-chem characteristics, as high-melting-point, high-modulus, corrosion-resistant, high heat conduction, high conductivity etc., is with a wide range of applications.At TiB
2The middle BN that introduces regulates its resistivity and heat-shock resistance, can be made into novel conductivity ceramics matrix material, this conductivity ceramics matrix material can be widely used in various material surface metallization and surface modification, using in a large number aspect wrapping material, multilayer film electrical condenser and the teletron metallization, is the crucial consumptive material of vacuum evaporation industry.
TiB
2-BN composite ceramics can adopt reaction sintering to prepare.It is to be raw material with Ti+BN, forms TiB by pyroreaction
2+ BN.The main drawback of this technology is the difficult control of synthetic phase composite, and material structure is inhomogeneous, and therefore, the finished product rate is low, the specific conductivity instability, and anti-metal corrode is poor, and work-ing life is short.
Summary of the invention
Technical problem to be solved by this invention is: overcome the above-mentioned shortcoming of prior art, adopt the TiB of burning reduction synthesis technique preparation
2Be main raw material, be equipped with commercially available BN and additive A lN, SiC responds to hot pressed sintering or energising pressure sintering between 1700 ℃～2000 ℃, can form the high-density TiB of even structure
2-BN matrix material.This TiB
2-BN conductivity ceramics matrix material has stable specific conductivity, good anti-metal corrode.
The technical solution adopted for the present invention to solve the technical problems is: with TiO
2, B
2O
3, Mg powder uniform mixing and compression molding; place the self-spreading high-temperature synthesizing device (china national practical new-type patent: ZL93216816.7) of argon shield at normal temperatures and pressures; ignition, products of combustion obtain having high sintering activity after broken, pickling, fine TiB
2Powder (purity is greater than 98%, and granularity is less than 5 μ m), with itself and commercially available BN and additive A lN, SiC cooperates by a certain percentage, obtains to have highdensity TiB by induction hot pressed sintering or energising pressure sintering
2-BN conductivity ceramics matrix material.
The present invention is achieved in that
1. with TiO
2, B
2O
3With Mg powder uniform mixing and compression molding, (china national practical new-type patent: ZL93216816.7), ignition obtains products of combustion to place the self-spreading high-temperature synthesizing device of argon shield at normal temperatures and pressures.
TiO wherein
2Powder diameter should be less than 80 μ m, B
2O
3Powder diameter should be less than 120 μ m, and the Mg powder diameter should be less than 200 μ m.
The TiO of the synthetic usefulness of self propagating high temperature reduction
2, B
2O
3, its prescription of Mg powder stock is by weight percentage: TiO
2Be 27-29wt%, B
2O
3For 26-28wt%, Mg are 43-47wt%.
2.TiB
2The purification of ceramic, separation can realize according to following technology: products of combustion sieves after the ball mill fragmentation and obtains the powder of particle diameter less than 0.5mm; Powder is placed in the reactor, is pickling 1～10 hour under 20～80 ℃ of temperature in the hydrochloric acid of 0.5～2.0mol/l or the sulfuric acid in concentration, obtained product after filtration, oven dry, be the high-purity titanium diboride ceramic.
Synthetic high-purity Ti B after adopting synthetic (SHRS) technology of self propagating high temperature reduction in conjunction with chemical purification
2Ceramic, its composition is: Ti67-69wt%, B29-32wt%, O≤0.75wt%, N≤0.1wt%, Mg≤0.15wt%, median size is 5 μ m.
3. the TiB that the reduction synthesis technique that will burn prepares
2Micro mist (purity＞98%, particle diameter are less than 5 μ m) and commercially available BN (purity＞97%, particle diameter are less than 1 μ m) and additive A lN (purity＞97%, particle diameter are less than 1 μ m), SiC (purity＞97%, particle diameter are less than 1 μ m) thorough mixing, after the spraying drying, place induction hot pressing or energising plus-pressure furnace, the hot pressed sintering time is 2 hours, sintering temperature: 1700--2000 ℃, sintering pressure: 40Mpa.Behind the furnace cooling, can obtain density greater than 95% TiB
2-BN composite conducting material.
TiB wherein
2The prescription of micro mist, BN, AlN, SiC is by weight percentage:
TiB
2：40～60wt％ BN：40～60wt％ AlN：0～10wt％ SiC：0～5wt％
The present invention compares with traditional technology, TiB
2-BN matrix material has the product density height, and quality is good, stable conductivity, the good advantage of anti-metal corrode.
The conductivity ceramics matrix material that the present invention relates to can be made into ceramic crucible, is used for the surface metalation of various materials and parts, and it is stable to have resistivity, the characteristics of long service life.
Specific embodiments
TiB of the present invention
2Micropowder preparing process and specific embodiment, be 01128497 at application number, denomination of invention has detailed description in the application for a patent for invention of " the self propagating high temperature reduction synthesis process prepares the high-purity titanium diboride ceramic ", related in the following embodiments " burning reduction synthetic high-purity Ti B
2Powder " be TiB with the preparation of this inventive method
2Micro mist.
Embodiment 1:
At first with 42g burning reduction synthetic high-purity Ti B
2Powder (purity＞98%, particle diameter are less than 5 μ m), the commercially available BN of 58g (purity＞97%, particle diameter are less than 1 μ m) thorough mixing, after spray-dried, place the high-strength graphite mould, in the induction hot pressing furnace, carry out hot pressed sintering, the sintering process system is: sintering temperature: 2000 ℃, and pressure: 40MPa, sintering time 2 hours.Slowly cool off with stove behind the sintering, can obtain relative density greater than 95% TiB
2-BN conductivity ceramics matrix material.
Embodiment 2:
At first with 44g burning reduction synthetic high-purity Ti B
2Powder (purity＞98%, particle diameter are less than 5 μ m), the commercially available BN of 44g (purity＞97%, particle diameter are less than 1 μ m), 8gAlN (purity＞97%, particle diameter are less than 1 μ m), 4g SiC (purity＞97%, particle diameter are less than 1 μ m) thorough mixing, spray-dried after, place the high-strength graphite mould, in the energising plus-pressure furnace, carry out hot pressed sintering, the sintering process system is: sintering temperature: 1900 ℃, and pressure: 40MPa, sintering time 2 hours.Slowly cool off with stove behind the sintering, can obtain relative density greater than 95% TiB
2-BN conductivity ceramics matrix material.
Embodiment 3:
At first with 60g burning reduction synthetic high-purity Ti B
2Powder (purity＞98%, particle diameter are less than 5 μ m), the commercially available BN of 35g (purity＞97%, particle diameter are less than 1 μ m), 5gAlN (purity＞97%, particle diameter are less than 1 μ m) thorough mixing, after spray-dried, place the high-strength graphite mould, carry out hot pressed sintering in the induction hot pressing furnace, the sintering process system is: sintering temperature: 1800 ℃, pressure: 40MPa, sintering time 2 hours.Slowly cool off with stove behind the sintering, can obtain relative density greater than 95% TiB
2-BN conductivity ceramics matrix material.
Embodiment 4:
At first with 45g burning reduction synthetic high-purity Ti B
2Powder (purity＞98%, particle diameter are less than 5 μ m), the commercially available BN of 50g (purity＞97%, particle diameter are less than 1 μ m), 3gAlN (purity＞97%, particle diameter are less than 1 μ m), 2g SiC (purity＞97%, particle diameter are less than 1 μ m) thorough mixing, spray-dried after, place the high-strength graphite mould, in the energising plus-pressure furnace, carry out hot pressed sintering, the sintering process system is: sintering temperature: 1700 ℃, and pressure: 40MPa, sintering time 2 hours.Slowly cool off with stove behind the sintering, can obtain relative density greater than 95% TiB
2-BN conductivity ceramics matrix material.
Claims (1)
1. a conductivity ceramics matrix material is characterized in that the TiB with the preparation of burning reduction synthesis technique
2Micro mist (number of patent application: 01128497.8), commercially available BN (purity＞97%, particle diameter are less than 1 μ m), additive A lN (purity＞97%, particle diameter are less than 1 μ m) and SiC (purity＞97%, particle diameter are less than 1 μ m) thorough mixing after the spraying drying, place high-strength graphite, adopt induction hot pressed sintering or energising pressure sintering method sintering, the hot pressed sintering time is 2 hours, sintering temperature: 1700～2000 ℃, and sintering pressure: 40Mpa, behind the furnace cooling, can obtain density greater than 95% TiB
2-BN composite conducting material, wherein TiB
2, BN, AlN and SiC powder prescription be TiB by weight percentage
2: 40～60wt%; BN:40～60wt%; AlN:0～10wt%; SiC:0～5wt%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01133505 CN1358690A (en) | 2001-09-28 | 2001-09-28 | Method for prepairng TiB2-BN conductive composite material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01133505 CN1358690A (en) | 2001-09-28 | 2001-09-28 | Method for prepairng TiB2-BN conductive composite material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1358690A true CN1358690A (en) | 2002-07-17 |
Family
ID=4671869
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|---|---|---|---|
| CN 01133505 Pending CN1358690A (en) | 2001-09-28 | 2001-09-28 | Method for prepairng TiB2-BN conductive composite material |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101460649B (en) * | 2006-06-02 | 2010-12-08 | 株式会社丰田中央研究所 | Conductive corrosion-resistant material, and method for producing the same |
| US8034153B2 (en) | 2005-12-22 | 2011-10-11 | Momentive Performances Materials, Inc. | Wear resistant low friction coating composition, coated components, and method for coating thereof |
| CN102983015A (en) * | 2011-09-06 | 2013-03-20 | 施耐德电器工业公司 | Contact material comprising BN/TiB2 comprising multiphase ceramic materials and purpose thereof and breaker comprising the same |
| CN1922119B (en) * | 2004-02-20 | 2013-11-13 | 戴蒙得创新股份有限公司 | Sintered compact |
-
2001
- 2001-09-28 CN CN 01133505 patent/CN1358690A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1922119B (en) * | 2004-02-20 | 2013-11-13 | 戴蒙得创新股份有限公司 | Sintered compact |
| US8034153B2 (en) | 2005-12-22 | 2011-10-11 | Momentive Performances Materials, Inc. | Wear resistant low friction coating composition, coated components, and method for coating thereof |
| CN101037566B (en) * | 2005-12-22 | 2012-05-30 | 莫门蒂夫性能材料股份有限公司 | Wear-resistant low-friction coating composition, coated element, and method for producing said coating composition |
| CN101460649B (en) * | 2006-06-02 | 2010-12-08 | 株式会社丰田中央研究所 | Conductive corrosion-resistant material, and method for producing the same |
| CN102983015A (en) * | 2011-09-06 | 2013-03-20 | 施耐德电器工业公司 | Contact material comprising BN/TiB2 comprising multiphase ceramic materials and purpose thereof and breaker comprising the same |
| CN102983015B (en) * | 2011-09-06 | 2015-09-30 | 施耐德电器工业公司 | Comprise BN/TiB 2the contact material of diphase ceramic material, the purposes of contact material and the circuit breaker containing this contact material |
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