CN1354526A - Light-emitting element wafer-covering package method and its structure - Google Patents
Light-emitting element wafer-covering package method and its structure Download PDFInfo
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- CN1354526A CN1354526A CN00132654A CN00132654A CN1354526A CN 1354526 A CN1354526 A CN 1354526A CN 00132654 A CN00132654 A CN 00132654A CN 00132654 A CN00132654 A CN 00132654A CN 1354526 A CN1354526 A CN 1354526A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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Abstract
The invention relates to a method and a structure for assembling compound crystal of lightening element. the positive and negative electrode of the lightening element of semiconductor is towards same surface. Proper leads pattern and joint pad is prepared on a bearing base plate. The element is adhered to the bearing base plate by conducting resin of textural anisotropy or solder with mode of direct wafer joint. The lightening element is crystallized and grows up on a transparent base plate, so the light emitted by the lightening element can penetrate through the transparent base plate. Metal lug or solder lug is preformed on positive or negative electrodes properly. The positive electrode is made of material with high refractive index in order to get more light.
Description
The present invention relates to a kind of semiconductor light-emitting elements (Light Emitting Divice; LED) Zu Zhuan method and structure thereof particularly relate to method and structure thereof that a kind of semiconductor light-emitting elements covers brilliant assembling (Flip-chip packaging).
The Manufacturing Technology Development of semiconductor light-emitting elements is rapid in recent years, and one of them great breakthrough is successfully made based on the light-emitting component of gallium nitride (GaN), makes in visible light wave range the light that sends blue region with light-emitting component become possibility.A kind of structure of the gallium nitride light-emitting element that is widely adopted, it is the crystallizing layer that on a sapphire (sapphire) substrate, forms gallium nitride, on the p of this crystallizing layer type and n N-type semiconductor N, be formed with a p (just) electrode and a n (bearing) electrode respectively, and this p electrode and this n electrode are towards with one side.Figure 1A, 1B illustrate a kind of known assemble method of this light-emitting component 1, with this n electrode 2 and this p electrode 3 up, and this sapphire substrate 4 down with a supporting body 5, for example, a lead frame combines.And then engage the mode of (wirebonding) with line, electrically connect the electrical connection terminal 6,7 of this electrode 2,3 and this supporting body 5 with metal wire 9 (the about 25 μ m of diameter).Last use high transparent resin (epoxy) 8 will finish this light-emitting component 1 that line engages again to seal (encapsulate), electrically reach the destruction that mechanical connection avoids being subjected to external environment between this light-emitting component 1 and this supporting body 5 to protect.
Yet in the mode that line engages light-emitting component is encapsulated, at lip-deep joint sheet (bonding pad) 10 diameters of light-emitting component 1 at least about 100 μ m.This is because in the process of online joint, the spherical end points 11 of this metal wire 9 can be crushed and make diameter become the three to four-fold of original metal wire 9 diameters.Therefore engage the assembling of carrying out light-emitting component with line, inevitably, can be because this joint sheet 10, and make light that light-emitting component produced be stopped and can't pass through.Even last light passes light-emitting component with other outlet, also can subtract greatly because of reflection and absorption intensity repeatedly.
Elsewhere, assembling mode with the line joint, this electrical connection terminal 6,7 on this supporting body 5 must take additional space, and connects electrode 2,3 and this electrical connection terminal 6,7 of these light-emitting components 1 with this metal wire 9, and formed wire loop (loop) also must occupy sizable space.Constantly towards the trend of miniaturization development, also be undoubtedly a kind of shortcoming for present light-emitting component.
Therefore the present invention is exactly in order to address the above problem, and proposes a kind of method and structure of new light-emitting component assembling.
Main purpose of the present invention is to provide a kind of method and structure thereof of light emitting element-crystal assembling, to solve the space that assembling mode was caused waste that line engages and the joint sheet problem that stops to light.
According to light-emitting component assembling method provided by the present invention, be particularly conducive to the miniaturization of light-emitting component, be applicable to the assembling of the light-emitting component that size and electrode spacing are minimum.
The object of the present invention is achieved like this: the method for a kind of light emitting element-crystal assembling is towards the semiconductor light-emitting elements with one side, with direct wafer (the Directchip Attach that fits with a p electrode and n electrode; DCA) mode is by an anisotropic conducting rubber (AnisotropicConductive Adhesive; ACA) or scolder (solder) and the bearing substrate that is pre-formed suitable wire pattern and joint sheet (bonding pad) combine.Can save line and engage the problem that metal wire and joint sheet caused in the assembling space waste and joint sheet stop light.Aforesaid light-emitting component, be at a transparency carrier, crystalline growth and light-emitting component, for example, crystalline growth on sapphire substrate and the light-emitting component of gallium nitride (GaN) series, the light that this light-emitting component produced can penetrate this transparency carrier and take out (EXTRACTION) whereby.And be pre-formed metal coupling or solder projection on the aforesaid positive and negative electrode through suitable design, can make in the process of assembling, to be difficult for being short-circuited (short) between this electrode.Aforesaid anisotropic conducting rubber can be liquid state, high viscosity liquid or solid, shaped.And aforementioned bearing substrate can be a printed circuit board (PCB), ceramic substrate or semiconductor substrate, and its material can be rigidity (AlN, AL
2O
3, BT, FR4, FR, Si etc.) or flexible (polyimides etc.).
According to the structure of a kind of light-emitting component of the present invention, be that the material of p electrode with high reflectance constituted, can help increasing the efficient that light-emitting component light takes out.In addition, on p electrode and n electrode, form metal coupling respectively, and this metal coupling is the highest face temperature that protrudes from this light-emitting component, help like this when electrically connecting the joint sheet of this electrode and this bearing substrate, be difficult for producing the short circuit (short) between the electrode with anisotropic conducting rubber (ACA).
And according to the structure of another kind of light-emitting component of the present invention, be directly on p electrode and n electrode, to form solder projection respectively, this solder projection is close on shape and size each other, and is symmetrical in the center of this light-emitting component.Help like this at melt back (reflow), make in this electrode and the process that the joint sheet of this bearing substrate engages, the rotation that is difficult for producing the short circuit of electrode or cause this light-emitting component, turn over the phenomenon of sticking up.
Below in conjunction with accompanying drawing shown in the embodiment, purpose of the present invention, structural feature and function thereof are described in further detail.
Figure 1A and Figure 1B are the schematic diagram that known a kind of light-emitting component line engages assembling;
Fig. 2 A～Fig. 2 C is the generalized section according to a kind of light emitting element-crystal assemble method of the present invention, and a light-emitting component combines with a bearing substrate by anisotropic conducting rubber (ACA);
Fig. 3 A～Fig. 3 C is the generalized section according to another kind of light emitting element-crystal assemble method of the present invention, and a light-emitting component combines with a bearing substrate by solder projection;
Fig. 4 is the structural profile schematic diagram according to a kind of light-emitting component of the present invention, and wherein this p electrode is formed with the material of high reflectance;
Fig. 5 is the structural profile schematic diagram according to another kind of light-emitting component of the present invention, wherein is formed with a transparent metal layer between this p electrode and this light-emitting component, and the crystallizing layer of this transparent metal and this light-emitting component has the good Ohmic contact characteristic.
With reference to Fig. 2 A～Fig. 2 C, it has illustrated use anisotropic conducting rubber (ACA) 30 and has covered brilliant assemble method with what a light-emitting component 20 and a bearing substrate 40 electrically engaged.
At first, shown in Fig. 2 A, a light-emitting component 20 is provided, this light-emitting component 20 is the semiconductor light-emitting elements that get for crystalline growth on a transparency carrier 21, for example, the serial light-emitting component of gallium nitride (GaN) of crystalline growth on a sapphire (sapphire) substrate.The size of this light-emitting component can be as small as below hundreds of μ m.Be formed with a p electrode 23 and a n electrode 24 on this crystallizing layer 22, this p electrode 23 and this n electrode 24 are the same one sides towards this light-emitting component.More satisfactory is, is formed with metal coupling 25 simultaneously respectively on this electrode 23,24, and the height of this metal coupling 25 is the highest face temperatures that protrude from this light-emitting component 20, for example, exceeds 2～100 μ m, and its matter material for example can be Ni/Au or Cr/CrCu/Cu.And the exposed part of this crystallizing layer 22 and this p electrode 23 can form an insulating barrier 26 and is covered, and can make like this in the process of assembling to be difficult for being short-circuited between the electrode 23,24.
Then, shown in Fig. 2 B, provide a bearing substrate 40, this bearing substrate 40 is pre-formed suitable lead (conductor) 41 and joint sheet (bonding pad) 42.And on this bearing substrate 40, cover with paint, lacquer, colour wash, etc. an anisotropic conducting rubber layer 30.This anisotropic conducting rubber layer 30 can print or the mode of rubberizing is coated appropriate location on this bearing substrate 40.
Then, shown in Fig. 2 C, the metal coupling 25 of this light-emitting component is aimed at this joint sheets 42 of this bearing substrates, with this light-emitting component 20 and this bearing substrate 40 pressing mutually, and this anisotropic conducting rubber layer 30 heated make its sclerosis (cure) with suitable pressure.Because the conducting particles (conductive particles) 31 in this anisotropic conducting rubber layer 30 makes this electrode 23,24 and corresponding this joint sheet 42 reach electric connection.This anisotropic conducting rubber layer 30 after the sclerosis also can protect this electrode 23,24 and this metal coupling 25 not to be subjected to outer border environment damage, and can reduce the ill effect that this light-emitting component 20 and this bearing substrate 40 do not match and caused because of thermal coefficient of expansion.
With reference to Fig. 3 A～Fig. 3 C, it has illustrated and has used scolder to cover brilliant assemble method with what a light-emitting component 50 and a bearing substrate 60 electrically engaged.
At first, as shown in Figure 3A, provide a light-emitting component 50, this light-emitting component 50 is the semiconductor light-emitting elements that get for crystalline growth on a transparency carrier 51, for example, and the serial light-emitting component of the gallium nitride of crystalline growth (GaN) on a sapphire substrate.The size of this light-emitting component can be as small as below hundreds of μ m.Be formed with a p electrode 53 and a n electrode 54 on this crystallizing layer 52, this p electrode 53 and this n electrode 54 are the same one sides towards this light-emitting component.Then, for example, form solder projection 55 in the mode of electroplating respectively on this p electrode 53 and this n electrode 54, the height of this solder projection 55 for example, exceeds about 2～100 μ m of these light-emitting component 50 highest face temperatures approximately.Diffuse into this electrode 53,54 for fear of scolder, more satisfactory is before this solder projection 55 forms, can be pre-formed bottom metal layer (Under Bump Metallurgy earlier on this electrode 53,54; UBM) 56.In addition, more satisfactory is, as far as possible the shape of this solder projection 55 and size is made similarly, and is symmetrical in the center of this light-emitting component 50, and half the distance of these solder projection 55 sizes of being separated by at least between this solder projection 55.Like this, can reduce in the process of melt back (reflow) light-emitting component rotate, turn over stick up and short circuit may.Also can form an insulating barrier 57 at the exposed part of this crystallizing layer 52 and this p electrode 53 is covered.
Then, shown in Fig. 3 B figure, provide a bearing substrate 60, this bearing substrate 60 is pre-formed suitable lead 61 and joint sheet 62.Be superimposed after this solder projection 55 of this light-emitting component being aimed at this joint sheets 62 of this bearing substrates.Carry out a melt back (reflow) process again, make this electrode 53,54 reach electric connection with corresponding this joint sheet 62 by this solder projection 55.
Then; shown in Fig. 3 C; between this light-emitting component 50 and this bearing substrate 60, insert primer 70; in order to protecting this electrode 53,54 and this solder projection 55 not to be subjected to the destruction of external environment, and reduce the ill effect that this light-emitting component 50 and this bearing substrate 60 do not match and caused because of thermal coefficient of expansion.
Take out efficient in order further to increase the light that covers brilliant assembling back light-emitting component, the p electrode of light-emitting component in the previous embodiment can select for use high reflective material to constitute.The p electrode 81 that illustrates a light-emitting component 80 as Fig. 4 is formed by the material of high reflectance, and the light down 90 that this light-emitting component 80 is produced can directly be reflected away by the reflective p electrode 81 of this height, thereby has increased the extraction efficiency of light.
The reflective p electrode 81 of this height also can be as shown in Figure 5, has the transparency conducting layer 82 of good ohmic characteristic (Ohmic characteristics) and combine with the crystallizing layer 83 of this light-emitting component 80 by one, so that this light-emitting component has luminous efficiency preferably.
The above only is the present invention's preferred embodiment wherein, is not to be used for limiting practical range of the present invention; All equal variation and modifications of being done according to claim protection range of the present invention are claim of the present invention and contain.
Claims (29)
1. the method for light emitting element-crystal assembling is characterized in that comprising at least the following step:
Provide a p electrode and n electrode towards same first-side light emitting device;
One bearing substrate that is pre-formed suitable wire pattern and joint sheet is provided;
On this bearing substrate, form an anisotropic conducting rubber layer;
With pressing behind this joint sheet of this this bearing substrate of electrode alignment of this light-emitting component; And
Heating makes this anisotropic conducting rubber sclerosis.
2. the method for light emitting element-crystal assembling as claimed in claim 1 is characterized in that this light-emitting component is the serial light-emitting component of gallium nitride (GaN) for crystalline growth on a sapphire substrate gets.
3. the method for light emitting element-crystal assembling as claimed in claim 2 is characterized in that this p electrode is made up of the reflective material of height.
4. the method for light emitting element-crystal as claimed in claim 3 assembling is characterized in that between the crystallizing layer of this p electrode and this light-emitting component, also is formed with one and the transparency conducting layer of this crystallizing layer tool good ohmic characteristic.
5. the method for light emitting element-crystal as claimed in claim 1 assembling is characterized in that also being formed with the metal coupling of the highest face temperature that protrudes from this light-emitting component on this p electrode and n electrode.
6. the method for light emitting element-crystal assembling as claimed in claim 5 is characterized in that this metal coupling protrudes from this light-emitting component highest face temperature 2～100 μ m.
7. the method for light emitting element-crystal assembling as claimed in claim 5 is characterized in that also comprising the following step: form an insulating barrier on this p electrode and n electrode, only expose this metal coupling.
8. the method for light emitting element-crystal assembling is characterized in that comprising at least the following step:
One p electrode and the same first-side light emitting device of n electrode south orientation are provided;
On this p electrode and n electrode, form solder projection;
One bearing substrate that is pre-formed suitable wire pattern and joint sheet is provided;
Be superimposed behind this joint sheet with this this carried base board of electrode alignment of this light-emitting component;
Make this electrode and this joint sheet reach electrically connect with a reflow process by this solder projection; And
Between this light-emitting component and this bearing substrate, insert primer.
9. the method for light emitting element-crystal assembling as claimed in claim 8 is characterized in that this light-emitting component is the serial light-emitting component of gallium nitride (GaN) for crystalline growth on a sapphire substrate gets.
10. the method for light emitting element-crystal look dress as claimed in claim 9 is characterized in that this p electrode is made up of the reflective material of height.
11. the method for light emitting element-crystal as claimed in claim 10 assembling is characterized in that between the crystallizing layer of this p electrode and this light-emitting component, also is formed with one and the transparency conducting layer of this crystallizing layer tool good ohmic characteristic.
12. the method for light emitting element-crystal assembling as claimed in claim 8 is characterized in that also being included in the step that forms bottom metal layer (UBM) on this p electrode and the n electrode.
13. the method for light emitting element-crystal assembling as claimed in claim 8 is characterized in that this solder projection protrudes from this light-emitting component highest face temperature 2～100 μ m.
14. the method for light emitting element-crystal as claimed in claim 13 assembling, shape and size are similar and be symmetrical in the center of this light-emitting component each other to it is characterized in that this solder projection.
15. the method for light emitting element-crystal assembling as claimed in claim 8 is characterized in that also comprising the following step: on this p electrode and n electrode, form an insulating barrier, only expose and this solder projection electrode in contact zone.
16. the structure of a light emitting element-crystal assembling is characterized in that comprising at least:
One p electrode and n electrode are towards same first-side light emitting device;
One is pre-formed the bearing substrate of suitable lead (conductor) pattern and joint sheet; And
One anisotropic conducting rubber (ACA) between this light-emitting component and this substrate, makes this electrode and this joint sheet reach electrically connect.
17. the structure of light emitting element-crystal assembling as claimed in claim 16 is characterized in that this light-emitting component is the serial light-emitting component of gallium nitride (GaN) for crystalline growth on a sapphire substrate gets.
18. the structure of light emitting element-crystal assembling as claimed in claim 17 is characterized in that this p electrode is made up of the material of high reflectance.
19. the structure of light emitting element-crystal as claimed in claim 18 assembling is characterized in that between the crystallizing layer of this p electrode and this light-emitting component, also is formed with one and the transparency conducting layer of this crystallizing layer tool good ohmic characteristic.
20. the structure of light emitting element-crystal assembling as claimed in claim 17 it is characterized in that also being formed with metal coupling on this p electrode and the n electrode, and this metal coupling is the highest face temperature that protrudes from this light-emitting component.
21. the structure of light emitting element-crystal assembling as claimed in claim 20 is characterized in that this metal coupling protrudes from this light-emitting component highest face temperature 2～100 μ m.
22. the structure of light emitting element-crystal assembling as claimed in claim 16 is characterized in that also being formed with an insulating barrier on this p electrode and the n electrode, and only exposes this metal coupling.
23. the structure of a light emitting element-crystal assembling is characterized in that comprising at least:
One p electrode and n electrode are towards same first-side light emitting device;
One is pre-formed carrying of suitable wire pattern and joint sheet holds substrate;
Solder projection between this p electrode and n electrode and its pairing this joint sheet, makes this electrode and this joint sheet reach electrically connect; And
One primer is filled between this light-emitting component and this substrate.
24. the structure of light emitting element-crystal assembling as claimed in claim 23 is characterized in that this light-emitting component is the serial light-emitting component of gallium nitride (GaN) for crystalline growth on a sapphire substrate gets.
25. the structure of light emitting element-crystal assembling as claimed in claim 24 is characterized in that this p electrode is formed by the material of high reflectance.
26. the structure of light emitting element-crystal as claimed in claim 25 assembling is characterized in that between the crystallizing layer of this p electrode and this light-emitting component, also is formed with one and the transparency conducting layer of this crystallizing layer tool good ohmic characteristic.
27. the structure of light emitting element-crystal as claimed in claim 23 assembling, it is characterized in that this solder projection each other shape, size is similar and be symmetrical in the center of this light-emitting component.
28. the structure of light emitting element-crystal assembling as claimed in claim 23 is characterized in that also having bottom metal layer between this solder projection and this p electrode and the n electrode.
29. the structure of light emitting element-crystal assembling as claimed in claim 23 is characterized in that also being formed with an insulating barrier on this p electrode and the n electrode, and only exposes this solder projection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN00132654A CN1354526A (en) | 2000-11-21 | 2000-11-21 | Light-emitting element wafer-covering package method and its structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN00132654A CN1354526A (en) | 2000-11-21 | 2000-11-21 | Light-emitting element wafer-covering package method and its structure |
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| CN1354526A true CN1354526A (en) | 2002-06-19 |
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| CN00132654A Pending CN1354526A (en) | 2000-11-21 | 2000-11-21 | Light-emitting element wafer-covering package method and its structure |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100359687C (en) * | 2002-06-28 | 2008-01-02 | 株式会社东芝 | Optical coupling semiconductor device and its mfg. method |
| CN100446201C (en) * | 2004-09-30 | 2008-12-24 | 株式会社瑞萨科技 | Manufacturing method of a semiconductor device |
| CN100445871C (en) * | 2004-10-28 | 2008-12-24 | 探微科技股份有限公司 | Wafer bonding method |
| CN102214779A (en) * | 2011-06-02 | 2011-10-12 | 晶科电子（广州）有限公司 | High-reliability light-emitting diode and manufacturing method thereof |
| CN102593023A (en) * | 2012-02-22 | 2012-07-18 | 苏州晶方半导体科技股份有限公司 | Bulge encapsulating structure and bulge encapsulating method |
| CN102651350A (en) * | 2011-02-25 | 2012-08-29 | 精材科技股份有限公司 | Wafer package |
| CN104979224A (en) * | 2014-04-04 | 2015-10-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | Device packaging interconnection method |
| WO2019179227A1 (en) * | 2018-03-22 | 2019-09-26 | 厦门市三安光电科技有限公司 | Micro light-emitting element and manufacturing method thereof |
| CN110635017A (en) * | 2019-08-09 | 2019-12-31 | 惠州市志金电子科技有限公司 | Miniature backlight substrate packaging method |
-
2000
- 2000-11-21 CN CN00132654A patent/CN1354526A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100359687C (en) * | 2002-06-28 | 2008-01-02 | 株式会社东芝 | Optical coupling semiconductor device and its mfg. method |
| CN100446201C (en) * | 2004-09-30 | 2008-12-24 | 株式会社瑞萨科技 | Manufacturing method of a semiconductor device |
| CN100445871C (en) * | 2004-10-28 | 2008-12-24 | 探微科技股份有限公司 | Wafer bonding method |
| CN102651350A (en) * | 2011-02-25 | 2012-08-29 | 精材科技股份有限公司 | Wafer package |
| CN102651350B (en) * | 2011-02-25 | 2015-01-28 | 精材科技股份有限公司 | Wafer package |
| CN102214779A (en) * | 2011-06-02 | 2011-10-12 | 晶科电子（广州）有限公司 | High-reliability light-emitting diode and manufacturing method thereof |
| CN102593023A (en) * | 2012-02-22 | 2012-07-18 | 苏州晶方半导体科技股份有限公司 | Bulge encapsulating structure and bulge encapsulating method |
| CN102593023B (en) * | 2012-02-22 | 2016-04-13 | 苏州晶方半导体科技股份有限公司 | Convex block package structure and projection method for packing |
| CN104979224A (en) * | 2014-04-04 | 2015-10-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | Device packaging interconnection method |
| CN104979224B (en) * | 2014-04-04 | 2017-10-20 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of device encapsulates interconnected method |
| WO2019179227A1 (en) * | 2018-03-22 | 2019-09-26 | 厦门市三安光电科技有限公司 | Micro light-emitting element and manufacturing method thereof |
| US11804584B2 (en) | 2018-03-22 | 2023-10-31 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Micro light-emitting element and device, and use and production method thereof |
| CN110635017A (en) * | 2019-08-09 | 2019-12-31 | 惠州市志金电子科技有限公司 | Miniature backlight substrate packaging method |
| CN110635017B (en) * | 2019-08-09 | 2021-07-09 | 惠州市志金电子科技有限公司 | Miniature backlight substrate packaging method |
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