CN1207786C - Semiconductor storage device and its making method - Google Patents
Semiconductor storage device and its making method Download PDFInfo
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- CN1207786C CN1207786C CNB021074275A CN02107427A CN1207786C CN 1207786 C CN1207786 C CN 1207786C CN B021074275 A CNB021074275 A CN B021074275A CN 02107427 A CN02107427 A CN 02107427A CN 1207786 C CN1207786 C CN 1207786C
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000003860 storage Methods 0.000 title claims description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 171
- 239000002184 metal Substances 0.000 claims abstract description 168
- 150000004767 nitrides Chemical class 0.000 claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 claims abstract description 32
- 239000010410 layer Substances 0.000 claims description 78
- 230000004888 barrier function Effects 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 30
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 24
- 239000011229 interlayer Substances 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 17
- 229910052707 ruthenium Inorganic materials 0.000 claims description 12
- 229910052741 iridium Inorganic materials 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 229910004121 SrRuO Inorganic materials 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- 238000003475 lamination Methods 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- 238000010276 construction Methods 0.000 claims description 4
- 239000012808 vapor phase Substances 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- 230000008021 deposition Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000005755 formation reaction Methods 0.000 description 16
- 238000000137 annealing Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
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- 238000001020 plasma etching Methods 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
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- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
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- FLDSMVTWEZKONL-AWEZNQCLSA-N 5,5-dimethyl-N-[(3S)-5-methyl-4-oxo-2,3-dihydro-1,5-benzoxazepin-3-yl]-1,4,7,8-tetrahydrooxepino[4,5-c]pyrazole-3-carboxamide Chemical compound CC1(CC2=C(NN=C2C(=O)N[C@@H]2C(N(C3=C(OC2)C=CC=C3)C)=O)CCO1)C FLDSMVTWEZKONL-AWEZNQCLSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
Provided is an arrangement for suppressing the stripping of a lower electrode of a ferroelectric capacitive element in a region above a plug during the deposition of a PZT film or subsequent heat treatment, and a method for manufacturing a semiconductor memory. A three-layer film of first metal, a metal nitride film and second metal is formed beneath the lower electrode of the ferroelectric capacitive element wherein the metal nitride film is composed of a nitride of the first or second metal.
Description
Technical field
The present invention relates to semiconductor storage and manufacture method thereof, particularly relate to the semiconductor memory and the manufacture method thereof that possess for strong dielectric capacity cell or high dielectric capacity cell and the memory cell transistor that keeps being formed on the memory on the Semiconductor substrate.
Background technology
In recent years, very active with strong dielectric film or high dielectric film as the technological development of the semiconductor memory of capacitor insulating film.The semiconductor memory utilization is formed on the polarized state of strong dielectric capacity cell on the Semiconductor substrate or high dielectric capacity cell or has or not charge storage information.
Fig. 9 be model utility the profile of existing memory unit is shown.As shown in Figure 9, in the surf zone of Semiconductor substrate (silicon substrate) 101, formation source, leakage diffusion layer 102 on Semiconductor substrate 101, form gate electrode 103 by gate insulating film, thus, become the field-effect transistor of memory cell transistor.Form bit line by the 1st metal line 105, be electrically connected by the diffusion layer 102 of the 1st plug (contact plug) 104 with field-effect transistor one side.
On field-effect transistor,, form by barrier layer 107, lower electrode 111, strong dielectric film (or high dielectric film) 112, upper electrode 113 formation capacity cells by interlayer dielectric, the 1st metal line the 105, the 1st plug 104.Lower electrode 111 is connected with the field-effect transistor the opposing party's on Semiconductor substrate 101 surfaces diffusion layer 102 by barrier layer the 107, the 2nd plug (patchplug) the 106, the 1st metal line the 105, the 1st plug 104.In the semiconductor storage of this spline structure, the holding concurrently gate electrode 103 of field-effect transistor of word line WL.In addition, in Fig. 9, interlayer dielectric 118 not difference show be formed on the Semiconductor substrate, the 1st metal line 105 be deposited in the 1st interlayer dielectric above it and be formed on the 1st interlayer dielectric, barrier layer 107 is deposited in the 2nd interlayer dielectric above it.
(height) dielectric film 112 is by PZT (PbZr by force
xTi
1-xO
3), SBT (SrBi
2Ta
2O
9) wait formation, open flat 11-317500 communique as the spy and form by CVD (chemical vapor-phase growing) etc. disclosed.
On capacity cell, formation is called electric capacity coverlay (being also referred to as " electric capacity covering dielectric film ") 115, and formation is as the 2nd metal line 116 of anode line on it.
(height) dielectric film forms in oxidizing atmosphere usually by force, also has, and after forming strong (height) dielectric film, in order to stablize strong dielectric film, need anneal under oxidizing atmosphere under many situations.For this reason, use platinum group metal or the IrO of Pt, Ir, Ru etc. as lower electrode 111 and upper electrode 113
2, RuO
2, SrRuO
3Deng electroconductive oxide.Barrier layer 107 for example the spy open record such as flat 8-236719 communique like that, use TiN usually, spread upward to prevent plug material.
As the 1st, the 2nd metal line 105,116 require it have easy microfabrication, with interlayer dielectric 118 with become the SiO of electric capacity coverlay 115
2Outstanding adhesiveness, low-resistivity are arranged, for example, used WSi
2, Ti, TiN, Al multilayer film.
On the 2nd metal line 116, form silicon nitride film (SiN with plasma CVD method
X) or silicon oxynitride film (SiO
XN
Y) as passivating film 117.In addition, also as specially open flat 7-245237 communique and put down in writing like that, the fatigue resistance of semiconductor memory data rewrite depends on to a great extent and constitutes and the material of the lower electrode 111 that joins of (height) dielectric film by force.As lower electrode 111 as employing Ir, Ru or IrO
2, RuO
2, SrRuO
3Deng electroconductive oxide, the data rewrite fatigue resistance just significantly improves.Therefore, use these materials as lower electrode 111.
Adopt Ir, Ru, IrO
2, RuO
2, SrRuO
3Deng the situation of electroconductive oxide as the lower electrode material under, for example special open that flat 6-326249 communique put down in writing like that, consider the adhesiveness of lower electrode material and Semiconductor substrate, the barrier layer is with TiN/Ti (Ti of lower floor, upper strata TiN), at the order lamination structure of strong (height) dielectric film of film forming on the multilayer film of barrier layer, lower electrode.
Summary of the invention
But, discoveries such as present inventor are on the Semiconductor substrate of having made plug (forming the Semiconductor substrate of plug on the surface at interlayer dielectric), form described multilayer film (order lamination the film of the barrier layer of TiN/Ti, lower electrode), when film forming strong dielectric film or high dielectric film, only the problem that hikes up is peeled off with regard to producing from its barrier layer TiN/Ti of lower floor in the zone on plug, lower electrode.
As an example, on the Semiconductor substrate of having made the W plug, form Ru/TiN/Ti as lower electrode/barrier layer structure, on it, at 430 ℃ of following growth PZT films of underlayer temperature, Figure 10 illustrates the image with sem observation PZT film section with the CVD method.Figure 11 is with the ideograph shown in the structurally associated company of the image shown in Figure 10 and Fig. 9.
With reference to Figure 10 and Figure 11, only can see that PZT/Ru peels off the appearance that hikes up from TiN on the zone on the W plug.Because PZT causes big stress, to peel off and hike up the thermodynamic relation that results between Semiconductor substrate, W plug, barrier layer, lower electrode and the PZT film, we infer to be to produce because the stress that PZT film 112 causes concentrates on the W plug 106.
And, the lower electrode on the W plug once hike up from the barrier layer, that the electric capacity of memory cell on this W plug becomes is bad, like this, the fabrication yield of semiconductor memory just descends.Also have, the corresponding degree (degree of bad connection) that hikes up from the barrier layer also makes the reliability decrease of device property.
Therefore, the problem that desire of the present invention solves provides the lower electrode that can be suppressed at zone on the plug from the hiking up of barrier layer, and improves the semiconductor storage and the manufacture method thereof of fabrication yield.
For solving above-mentioned problem, the invention provides a kind of semiconductor storage, it has the plug that reaches the interlayer dielectric surface that is located on the Semiconductor substrate that has formed active element, on described plug, by the barrier layer, lower electrode, capactive film and upper electrode that strong dielectric film or high dielectric film are formed form capacity cell by such order lamination, described barrier layer, above laminated construction haves three layers, at described plug surface or with the surperficial side that is connected of described interlayer dielectric the 1st metal film is arranged, in a side that is connected with described lower electrode the 2nd metal film is arranged, between described the 1st metal film and described the 2nd metal film, possesses the layer of metal nitride film at least.
Another kind of semiconductor storage provided by the invention, it possesses the capacity cell on Semiconductor substrate, and capacity cell has the lower electrode and the upper electrode of dielectric film, the described dielectric film of clamping; Described lower electrode is provided with barrier layer, described barrier layer and its lower floor and is electrically connected by conductive component below it, described barrier layer comprises at least from 3 layers that descend to begin to be followed successively by the 1st metal film, metal nitride film and the 2nd metal film.
For solving above-mentioned problem, the invention provides a kind of semiconductor storage manufacture method, as the operation that forms capacity cell on Semiconductor substrate, it comprises at least: at one end form on the other end of the conductive component that is connected with bottom the barrier layer operation, the operation that forms lower electrode on the described barrier layer, form the operation of dielectric film on the described lower electrode, the operation of formation upper electrode on described dielectric film; Wherein said barrier layer forms operation, comprises the operation of layer-by-layer growth the 1st metal film, metal nitride film, the 2nd metal film successively.
In addition, the present invention also provides a kind of semiconductor device, it possesses the capacity cell on substrate, capacity cell has dielectric film and dielectric film insertion mutual relative configuration, described lower electrode and upper electrode therebetween, with the face contact of the opposite side of face of the relative side of described dielectric film of described lower electrode, set the barrier layer, described barrier layer comprises the 1st metal film, metal nitride film, the 2nd metal film 3 layers at least.
Operation principle of the present invention and execution mode below are described.The application's inventors are for solving described problem, testing the brand-new rule that found that of self-criticism with keen determination repeatedly: the barrier layer under will the lower electrode of described (height) dielectric film by force is when comprising trilamellar membrane with the metal nitride film of Ti, the Ta etc. of metal clamping and constitute, just can effectively be suppressed at dielectric film (for example PZT) and lower electrode (Ir or Ru) hiking up from barrier film on the zone on the plug.
In the trilamellar membrane, the 2nd metal of the superiors plays and improves and the adhering effect of lower electrode.Being formed on the metal nitride film of the 2nd metal lower layer, is necessary to suppressing the diffusion of plug material and oxygen not only, and it also is necessary that the lower electrode in zone on the inhibition W plug is hiked up.Producing the experimental fact that hikes up when this can be by film forming PZT on Ru/Ti on described plug can verify.We suspect that hiking up of plug material diffusion couple lower electrode upward is also influential its reason.
Here, hike up iff the lower electrode that makes the 1st metal and metal nitride film lamination can not fully suppress zone on the plug.Produce when this can be by film forming PZT on Ru/Ti/TiN and describedly on plug, hike up this experimental fact checking.
For suppressing peeling off of lower electrode, be necessary further in the lower floor of this metal nitride film, to form the 1st metal, be necessary to form 3 tunics from lower floor's order lamination the 1st metal film, metal nitride film, the 2nd metal film.Metal nitride film is the nitride film of the 1st metal or the 2nd metal.
Our supposition of necessary reason of peeling off that the 1st metal pair suppresses lower electrode is because the crystallinity of metal nitride film is influenced by the crystalline of lower membrane more than it, and plays the effect that the stress of the 1st metal on plug is concentrated that relaxes.
3 tunics that constitute the barrier layer are preferably used 3 tunics (Ti/TiN/Ti) of Ti clamping TiN or with 3 tunics (Ta/TaN/Ta) of Ta clamping TaN.This is because the adhesiveness of Ti and Ta and Ir and Ru is outstanding.
Further, Ti, TiN, Ta and TaN be material commonly used in the LSI manufacturing process always, can utilize existing film-forming apparatus, this is in order to suppress the rising of semiconductor memory manufacturing price.
In addition, the upper electrode of strong (height) dielectric capacitance element and lower electrode are preferably with Ru or RuO
XFor main body constitutes.This is because Ru is unique element that can carry out microfabrication with chemical corrosion method in the platinum family element.
The generation frequency that lower electrode hikes up is also strong depends on strong (height) dielectric film-forming temperature.According to the present application person's etc. experiment, the film-forming temperature one of PZT surpasses 475 ℃, promptly uses 3 tunics also can see the phenomenon that lower electrode hikes up as barrier film.Therefore, strong (height) dielectric film-forming temperature be preferably in below 500 ℃, better below 475 ℃.
Semiconductor memory of the present invention is made of following each several part: have the plug that is formed on the interlayer dielectric on the Semiconductor substrate of having made transistor etc. and reaches this interlayer dielectric surface, on this plug from lower floor order stack layer growth barrier layer, lower electrode, the capacity cell of strong dielectric film or high dielectric film and upper electrode, in having the semiconductor storage of this capacity cell, lower electrode is by Ru, Ir or electroconductive oxide constitute, the barrier layer is made of the multilayer film more than at least 3 layers, the material that the barrier layer is connected with lower electrode is made of the 1st metal, the material that the barrier layer is connected with plug or interlayer dielectric is made of the 2nd metal, at least form the metal nitride films of one deck at the 1st metal and the 2nd intermetallic, this metal nitride films is made up of the nitride film of the 1st metal or the 2nd metal.
Description of drawings
Fig. 1 is the profile that the semiconductor memory cell structure of an embodiment of the present invention is shown.
Fig. 2 is the process profile that manufacture method one execution mode process sequence section of the present invention is shown.
Fig. 3 is the process profile that manufacture method one execution mode process sequence section of the present invention is shown.
Fig. 4 is the profile that one embodiment of the invention is shown.
Fig. 5 is the process profile that manufacture method one embodiment process sequence section of the present invention is shown.
Fig. 6 is the process profile that manufacture method one embodiment process sequence section of the present invention is shown.
Fig. 7 is the profile that the present invention the 2nd embodiment is shown.
Fig. 8 is the profile that the present invention the 3rd embodiment is shown.
Fig. 9 is the profile that existing memory is shown.
Figure 10 is the figure of the problem that must solve for explanation invention, is the image that the section with the lower electrode of the capacity cell of sem observation Semiconductor substrate and W plug obtains.
Figure 11 is the figure that model utility shows Figure 10 image.
Symbol description
1,101-Semiconductor substrate, 2,102-diffusion layer, 3,103-gate electrode, 4,104-the 1 plug, 5,105-the 1 metal line, 6,106-the 2 plug, 7,118-interlayer dielectric, 8-the 2 metal, the metal nitride film of 9-the 1 metal or the 2nd metal, 10-the 1 metal, 11,111-lower electrode, 12,112-strong (height) dielectric films, 13,113-upper electrode, 14-cap, 15-electric capacity coverlay, 16,116-the 2 metal line, 17,117-passivating film, 18-the 3 plug, 19,107-barrier layer.
Embodiment
Below, with reference to the description of drawings embodiments of the present invention.Fig. 1 illustrates the capacity cell in the semiconductor storage (semiconductor memory) that relates to an embodiment of the present invention and the fragmentary cross-sectional view of a memory cell transistor that is connected with this capacity cell.
This semiconductor memory has Semiconductor substrate 1, be located at memory cell transistor and the 1st metal line 5, strong dielectric capacity cell (perhaps high dielectric capacity cell) on this Semiconductor substrate 1, be located at the 2nd metal line 16 on the strong dielectric capacity cell (perhaps high dielectric capacity cell).In Fig. 1, though metal line shows 2 layers of wire structures of the 1st metal line the 5, the 2nd metal line 16,, being not limited to 2 layers of wire structures, metal line is which floor can.
Strong dielectric capacity cell (perhaps high dielectric capacity cell) comprises lower electrode 11, strong dielectric film (high dielectric film) 12, upper electrode 13.Upper electrode 13 is that main body constitutes with the platinum family element.
Strong dielectric film 12 is made up of PZT, PLZT, SBT etc.In addition, below just the strong dielectric capactive film is done an explanation as the strong dielectric capacity cell of capacity cell capactive film, for picture tantalum oxide Ta
2O
5Film, BST ((Ba, Sr) TiO
3) the high dielectric capacity cell of the high dielectric film that waits is suitable for too.
In the lower floor of lower electrode 11, connect and have the 2nd metal film 10, on the 2nd plug 6, connect and have the 1st metal film 8.
Between the 1st metal film 8 and the 2nd metal film 10, insert metal nitride film 9.In addition, between the 1st metal film 8 and the 2nd metal film 10, also can insert metal nitride film 9 metal in addition.The 2nd metal line 16 is connected with upper electrode 13 in contact hole.
Fig. 2 to Fig. 3 is the process profile for explanation an embodiment of the present invention manufacture method process sequence.With reference to Fig. 2 and Fig. 3, the manufacture method of present embodiment semiconductor memory is described.Form transistor, the 1st plug the 4, the 1st metal line 5 and the 2nd plug 6 with common MOS transistor operation.The 1st metal line 5 is that main body constitutes with AI.Formations such as the 1st plug the 4, the 2nd plug 6 usefulness W, polysilicon.On the 1st metal line 5, form the 2nd plug 6 backs, carry out planarization (with reference to Fig. 2 (a)) with CMP (Chemical Mechanical Polishing).
After the planarization, on the surface of interlayer dielectric 7, begin order from lower floor's one side and form the 1st metal film 8, metal nitride film the 9, the 2nd metal film 10 (with reference to Fig. 2 (b)).Use Ti, Ta as the 1st metal film the 8, the 2nd metal film 10.In addition, also can use Pt as the 2nd metal film 10.
Metal nitride film 9 is nitride of the metallic element of the 1st metal film 8 or the 2nd metal film 10.
Secondly, form lower electrode 11, formation strong dielectric film 12, upper electrode 13 (with reference to Fig. 2 (b)) on it.
As lower electrode 11 usefulness Ru, Ir or RuO
X, IrO
X, SrRuO
3Deng electroconductive oxide.
As strong dielectric film 12 in order to obtain under the normal temperature preferably PZT (PbZr of the necessary remnant polarization of non-volatile memory operation
XT
1-XO
3).Become the PZT film of strong dielectric film 12, form by sputtering method, sol-gal process, CVD method etc.Or PZLT ((Pb, La) (Zr, Ti) O
3), SrBi
2Ta
2O
9Deng also can.The film forming of strong dielectric 12 is being carried out below 500 ℃, is carrying out below 475 ℃ better.
As upper electrode 13 usefulness Ru, Ir or RuO
X, IrO
X, SrRuO
3Deng electroconductive oxide.With Ru or RuO
XConstitute for main body (principal component) under the situation of upper electrode 13, on upper electrode 13, be preferably formed as the cap of TiN etc.Ru and RuO
XDisappear with oxygen plasma treatment, and oxygen plasma treatment is to carry out for the photoresists of removing in the processing of capacity cell and use when forming the contacting of upper electrode.By the cap that TiN etc. is set on upper electrode 13 in case Ru, RuO during the block plasma treatment
XDisappearance.
After upper electrode 13 film forming, do mask etching upper electrode 13, strong dielectric film 12, lower electrode the 11, the 2nd metal 10, metal nitride film the 9, the 1st metal film 8 (with reference to Fig. 3 (c)) with photoresists.
Then, after dielectric films such as accumulation silicon oxide film are as electric capacity coverlay (also being called " electric capacity covering dielectric film ") 15, form the contact hole (with reference to Fig. 3 (d)) that leads to upper electrode 13.
Then, be that main body (principal component) forms (with reference to Fig. 3 (d)) as the 2nd metal line 16 usefulness WSi2, TiN, Al etc.
Further, on anode line 16, form passivating film 17 (with reference to Fig. 1).Form silicon nitride film (SiN as passivating film 17 usefulness plasma CVD methods
X) or silicon oxynitride film (SiO
XN
Y).
As adopt embodiments of the present invention, in strong (height) dielectric film film forming or in the annealing thereafter, can suppress the zone of lower electrode on plug and hike up.
Embodiment
Above-mentioned execution mode need be done more detailed description, describes with regard to embodiments of the invention with reference to accompanying drawing.
Fig. 4 illustrates the profile of the present invention the 1st embodiment.This semiconductor memory has Semiconductor substrate 1, be located at memory cell transistor and the 1st metal line 5, strong dielectric capacity cell on the Semiconductor substrate 1, be located at the 2nd metal line 16 on the strong dielectric capacity cell.
Comprise lower electrode 11, strong dielectric film 12, upper electrode 13 as strong dielectric capacity cell structure.Formation is as the Ti film of the 2nd metal (film) 10 below lower electrode 11, and formation is as the TiN film of metal nitride film 9 below the 2nd metal 10, and formation is as the Ti film of the 1st metal (film) 8 below it.
Manufacture method with regard to one embodiment of the invention describes.Fig. 5 to Fig. 6 illustrates the profile of one embodiment of the invention manufacture method master operation process sequence.With common Si semiconductor integrated circuit fabrication process (the LSI manufacturing process that comprises the layer of metal wiring layer at least), on Semiconductor substrate 1, make field-effect transistor, the 1st plug the 4, the 1st metal line 5.
On the 1st metal line 5, form the 2nd plug 6 (with reference to Fig. 5 (a)) that arrives with interlayer dielectric 7 surfaces of CMP method planarization.
The 1st metal line 5 constitutes from lower floor lamination Ti, TiN successively, Al, TiN.The 1st plug the 4, the 2nd plug 6 all is made of W in the present embodiment.
Then, on planarization interlayer dielectric 7, with sputtering method, film forming is as the Ti film of the 1st metal film 8, as the TiN film of metal nitride film 9, as the Ti film of the 2nd metal film 10 successively.Then, on the 2nd metal film 10, form Ru film (with reference to Fig. 5 (b)) as lower electrode 11 with sputtering method.
Then, on lower electrode 11, form strong dielectric film 12 (with reference to Fig. 5 (b)).Open the record of flat 11-317500 communique like that as the spy, the film forming of strong dielectric film 12 be with the CVD method, under 430 ℃ of underlayer temperatures, the PZT (PbZr of the formation about 200nm of thickness (nanometer)
0.45Ti
0.55O
3).
After the PZT film film forming,, in oxygen atmosphere, carry out about ten minutes annealing under 400 ℃ for improving the polarization characteristic of strong dielectric.The film forming of PZT and subsequent annealing are carried out in oxidizing atmosphere.
The film forming of strong dielectric film 12 and its annealing, mostly general as special opening flat 8-236719 communique puts down in writing is to carry out about 600 ℃.In this case, the 2nd plug 6 or the Ti that forms on it, TiN are oxidized, and the situation of 6 poor flows of lower electrode 11-the 2 plug takes place sometimes.
In the present embodiment, with CVD method film forming PZT film, owing to adopt the CVD method, underlayer temperature is the low temperature below 430 ℃, in the film forming and annealing operation of strong dielectric film 12, can not produce the 2nd plug 6 or the Ti that on it, forms, TiN oxidized, in the phenomenon of 6 poor flows of lower electrode 11-the 2 plug.
Once more, on strong dielectric film 12 with sputtering method form Ru successively as upper electrode 13, as the TiN of cap 14 (with reference to Fig. 5 (b)).Cap 14 (TiN) on upper electrode 13 is used to prevent the disappearance of Ru when carrying out oxygen plasma treatment removes the resist mask, and the resist mask is to use when the contact hole of electric capacity processing and formation and upper electrode 13.This is because the cause that Ru is etched with oxygen plasma treatment the time easily.
Then, by RIE method (Reactive Ion Etching) that cap 14, upper electrode 13 is graphical.Secondly, use the RIE method simultaneously with strong dielectric film 12, lower electrode the 11, the 2nd metal film 10, metal nitride film the 9, the 1st metal film 8 graphical (with reference to Fig. 6 (c)).
Then, as electric capacity coverlay 15 usefulness ozone (O
3) and TEOS (tetraethylorthosilicate) as source gas, by plasma CVD method, under 375 ℃ of underlayer temperatures, form SiO
2Film is formed the contact hole (with reference to Fig. 6 (d)) that reaches cap 14 by the RIE method.Be added in the damage on the strong dielectric film 12 when forming contact hole, after forming contact hole, in nitrogen atmosphere, under 400 ℃, carry out ten minutes annealing in order to remove.Then,, pile up TiN, Al, TiN successively,, formation anode line (with reference to Fig. 6 (d)) graphical with the RIE method with sputtering method as the 2nd metal line 16.
After the anode line graphization,, in nitrogen atmosphere, carry out ten minutes annealing under 400 ℃ for making strong dielectric polarization characteristic stabilisation.Further, on the 2nd metal line 16, use SiH
4, NH
3, N
2O makes unstrpped gas, forms the silicon oxynitride film (SiO of thickness 1 μ m (micron) under 300 ℃ of underlayer temperature, with plasma CVD method
XN
Y) as passivating film 17.
Below, the 2nd embodiment of the present invention is described.Fig. 7 is the figure that the formation of the present invention the 2nd embodiment is shown.
In the present embodiment, form 5 layers laminated construction Ti/TiN/Ti/TiN/Ti as the barrier layer.
As this embodiment, barrier layer clamping metal nitride film between the 2nd metal film (Ti) that is connected with lower electrode 11 and the 1st metal film (Ti) that is connected with plug 6 gets final product, and further, other metal of clamping also can.In this embodiment, between the 2nd metal film (Ti) and the 1st metal film (Ti) that is connected with plug, inserted the stack membrane of TiN/Ti/TiN.
Below, the 3rd embodiment of the present invention is described.Fig. 8 is the figure that the formation of the present invention the 3rd embodiment is shown.With reference to Fig. 8, in this embodiment, possesses Ta/TaN/Ta as the 2nd metal film 10/ metal nitride film 9/ the 1st metal film 8 laminated construction that become the barrier layer under the lower electrode 11.
Also have, in described each embodiment, being arranged on the 2nd metal line 16 that has formed contact hole on the electric capacity coverlay 15 is that cap 14 direct and on the upper electrode 13 is connected, but in this embodiment, do not adopt such structure, the 2nd metal line 16 is connected with cap 14 on the upper electrode 13 by the 3rd plug 18 that imbedding the switching hole that is located on the electric capacity coverlay 15.
In addition, as the barrier layer, outside structure shown in the described embodiment, also can be Ti/TaN/Ta, Ta/TaN/Ti, Pt/TiN/Ti, Pt/TaN/Ta, Pt/TaN/Ti etc. as the stromatolithic structure of the 2nd metal film/metal nitride film/the 1st metal film.Also can be Ru/O as upper electrode again,
2/ Ru, IrO
2/ Ir, SrRuO
3/ Ru etc.
In conjunction with above each embodiment the present invention has been described, but, the present invention is not limited only to the structure shown in the foregoing description, requires each to require in scope of invention in the patent application right, comprised certainly so long as the dealer that goes together with regard to getable various distortion, modification.
The effect of invention
As described above, adopt the present invention, have by the 1st gold medal owing to it as the barrier layer Belong at least 3-tier architecture of film, metal nitride film, the 2nd metal film composition, can be suppressed at electric capacity In the film film forming or thereafter annealing middle and lower part electrode the hiking up of zone on plug, can improve The fabrication yield of strong dielectric memory and device reliability.
Claims (26)
1. semiconductor storage, it has the plug that reaches the interlayer dielectric surface that is located on the Semiconductor substrate that has formed active element, on described plug, capactive film and the upper electrode be made up of barrier layer, lower electrode, strong dielectric film or high dielectric film form capacity cell by such order lamination, it is characterized in that:
Described barrier layer, the above laminated construction that haves three layers has the 1st metal film at described plug surface or with the surperficial side that is connected of described interlayer dielectric, in a side that is connected with described lower electrode the 2nd metal film is arranged,
Between described the 1st metal film and described the 2nd metal film, possesses the layer of metal nitride film at least.
2. semiconductor storage according to claim 1 is characterized in that:
Described metal nitride film is the nitride film of described the 1st metal or the 2nd metal.
3. semiconductor storage according to claim 1 and 2 is characterized in that:
Described lower electrode is included in the electroconductive oxide of the platinum family element that contains Ru and Ir and platinum family element at least.
4. semiconductor storage according to claim 1 and 2 is characterized in that:
The combination of described the 1st metal and described the 2nd metal is a kind of among Ti and Ti, Ti and Ta, Ta and Ti, Ta and the Ta at least.
5. semiconductor storage according to claim 1 is characterized in that:
Described the 2nd metal is made up of Pt, and described the 1st metal is made up of Ti or Ta.
6. semiconductor storage according to claim 5 is characterized in that:
Described metal nitride is TiN or TaN.
7. semiconductor storage according to claim 1 and 2 is characterized in that:
Described plug is to contain the plug as principal component with W.
8. semiconductor storage according to claim 1 is characterized in that:
Described capactive film forms with sputtering method or sol-gal process.
9. semiconductor storage according to claim 1 is characterized in that:
Described capactive film forms with the chemical vapor-phase growing method.
10. semiconductor storage according to claim 9 is characterized in that:
Described capactive film is to form under the film-forming temperature below 500 ℃.
11. semiconductor storage according to claim 9 is characterized in that:
Described capactive film is to form under the film-forming temperature below 475 ℃.
12. a semiconductor storage, it possesses the capacity cell on Semiconductor substrate, and capacity cell has the lower electrode and the upper electrode of dielectric film, the described dielectric film of clamping; Described lower electrode is provided with barrier layer, described barrier layer and its lower floor and is electrically connected by conductive component below it, it is characterized in that:
Described barrier layer comprises at least from 3 layers that descend to begin to be followed successively by the 1st metal film, metal nitride film and the 2nd metal film.
13. semiconductor storage according to claim 12 is characterized in that:
Described metal nitride film is made up of the nitride of the metallic element of the 1st metal film or the 2nd metal film.
14. semiconductor storage according to claim 12 is characterized in that:
The conductivity cap layer is set on described upper electrode as required, and described upper electrode is to be connected with the wiring layer on upper strata with the wiring layer contact on upper strata or by patchplug.
15. a semiconductor storage manufacture method, as the operation that forms capacity cell on Semiconductor substrate, it comprises at least:
At one end form on the other end of the conductive component that is connected with bottom the barrier layer operation,
On described barrier layer, form lower electrode operation,
On described lower electrode, form dielectric film operation,
On described dielectric film, form the operation of upper electrode; It is characterized in that:
Described barrier layer forms operation, comprises the operation of layer-by-layer growth the 1st metal film, metal nitride film, the 2nd metal film successively.
16. semiconductor storage manufacture method according to claim 15 is characterized in that:
The described other end of described conductive component reaches on the interlayer dielectric surface that is located on the described Semiconductor substrate, a described end of described conductive component extends on the conductive layer or described semiconductor substrate surface of lower floor,
On described interlayer dielectric surface, pile up described barrier layer, described lower electrode, described dielectric film and described upper electrode successively and form stack membrane, described stack membrane is graphical, make the capacity cell that described lower electrode is electrically connected by described barrier layer and described conductive component
The operation that forms described barrier layer comprises:
On described interlayer dielectric surface, become undermost described the 1st metal film in described barrier layer operation,
On described the 1st metal film, form described metal nitride film operation,
Formation becomes the operation of described the 2nd metal film of the described barrier layer the superiors.
17., it is characterized in that according to claim 15 or 16 described semiconductor storage manufacture methods:
Described metal nitride film is the nitride of the metallic element of the 1st metal film or the 2nd metal film.
18., it is characterized in that according to claim 15 or 16 described semiconductor storage manufacture methods:
Described the 2nd metal film, described metal nitride film, described the 1st metal film are
Ti、TiN、Ti、
Ti、TaN、Ta、
Ta、TaN、Ti、
Pt、TiN、Ti、
Pt、TaN、Ta、
In Pt, TaN, the Ti combination any.
19., it is characterized in that according to claim 15 or 16 described semiconductor storage manufacture methods:
Described lower electrode comprises Ru, Ir, Ru oxide, Ir oxide, SrRuO
3In at least a.
20. semiconductor storage manufacture method according to claim 16 is characterized in that:
The operation that forms described barrier layer comprises:
On the surface of described interlayer dielectric, form the 1st metal film operation,
On described the 1st metal film, form metal nitride film operation,
On described metal nitride film in accordance with regulations the combination stack metal film and the metal nitride film operation that forms laminated body,
On described laminated body, become the operation of the 2nd metal film of the described barrier layer the superiors.
21., it is characterized in that according to claim 15 or 16 described semiconductor storage manufacture methods:
Described conductive component contains W as principal component.
22., it is characterized in that according to claim 15 or 16 described semiconductor storage manufacture methods:
Described dielectric film is to form under the film-forming temperature below 500 ℃.
23., it is characterized in that according to claim 15 or 16 described semiconductor storage manufacture methods:
Described dielectric film is to form under the film-forming temperature below 475 ℃.
24., it is characterized in that according to claim 15 or 16 described semiconductor storage manufacture methods:
Described dielectric film is formed, is formed with the chemical vapor-phase growing method below 430 ℃ at underlayer temperature by the PZT film.
25., it is characterized in that according to claim 15 or 16 described semiconductor storage manufacture methods:
Described dielectric film forms with sputtering method or sol-gal process.
26. semiconductor device, it possesses the capacity cell on substrate, capacity cell has dielectric film and dielectric film insertion mutual relative configuration, described lower electrode and upper electrode therebetween, with the face contact of the opposite side of face of the relative side of described dielectric film of described lower electrode, set the barrier layer, it is characterized in that:
Described barrier layer comprises the 1st metal film, metal nitride film, the 2nd metal film 3 layers at least.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001075485A JP2002280523A (en) | 2001-03-16 | 2001-03-16 | Semiconductor memory and its manufacturing method |
| JP2001075485 | 2001-03-16 |
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|---|---|
| CN1375876A CN1375876A (en) | 2002-10-23 |
| CN1207786C true CN1207786C (en) | 2005-06-22 |
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|---|---|
| US (2) | US6730955B2 (en) |
| EP (1) | EP1241709A2 (en) |
| JP (1) | JP2002280523A (en) |
| KR (1) | KR20020073443A (en) |
| CN (1) | CN1207786C (en) |
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| GB2361244B (en) * | 2000-04-14 | 2004-02-11 | Trikon Holdings Ltd | A method of depositing dielectric |
| KR100481853B1 (en) * | 2002-07-26 | 2005-04-11 | 삼성전자주식회사 | Ferroelectric memory device having expanded plate lines and method of fabricating the same |
| KR100459733B1 (en) * | 2002-12-30 | 2004-12-03 | 삼성전자주식회사 | Interconnections having double story capping layer and method for forming the same |
| US20050070043A1 (en) * | 2003-09-30 | 2005-03-31 | Koji Yamakawa | Semiconductor device and method for manufacturing the same |
| JP2007036126A (en) * | 2005-07-29 | 2007-02-08 | Fujitsu Ltd | Semiconductor device and method for manufacturing the same |
| JP4617227B2 (en) * | 2005-09-01 | 2011-01-19 | 富士通セミコンダクター株式会社 | Ferroelectric memory device and manufacturing method thereof |
| US20080137262A1 (en) * | 2006-12-12 | 2008-06-12 | Texas Instruments Inc. | Methods and systems for capacitors |
| JP5621228B2 (en) * | 2009-08-27 | 2014-11-12 | 富士通株式会社 | Semiconductor device and manufacturing method thereof |
| JP5626010B2 (en) * | 2011-02-25 | 2014-11-19 | 富士通株式会社 | Semiconductor device, manufacturing method thereof, and power supply device |
| JP2012208294A (en) * | 2011-03-29 | 2012-10-25 | Seiko Epson Corp | Method for manufacturing electro-optic device, electro-optic device, projection-type display device, and electronic equipment |
| US9177826B2 (en) * | 2012-02-02 | 2015-11-03 | Globalfoundries Inc. | Methods of forming metal nitride materials |
| JP6380666B2 (en) | 2015-04-20 | 2018-08-29 | 富士電機株式会社 | Semiconductor device |
| CN106688104B (en) | 2015-04-20 | 2020-03-17 | 富士电机株式会社 | Semiconductor device with a plurality of semiconductor chips |
| CN105140199B (en) * | 2015-08-11 | 2018-06-29 | 上海华虹宏力半导体制造有限公司 | Top-level metallic membrane structure and aluminum manufacturing procedure process |
| DE102017210585B3 (en) * | 2017-06-23 | 2018-09-27 | Robert Bosch Gmbh | Bondpad layer system, gas sensor and method for producing a gas sensor |
| CN110112119B (en) | 2018-02-01 | 2021-02-09 | 联华电子股份有限公司 | Manufacturing method of bit line |
| KR102305342B1 (en) * | 2019-11-14 | 2021-09-24 | 울산과학기술원 | Nonvolatile ternary memory using two-dimensional ferroelectric material and device for manufacturing method thereof |
| CN112736198B (en) * | 2020-12-31 | 2023-06-02 | 上海集成电路装备材料产业创新中心有限公司 | Resistive random access memory and preparation method thereof |
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| JP2874512B2 (en) | 1993-05-13 | 1999-03-24 | 日本電気株式会社 | Thin film capacitor and method of manufacturing the same |
| JP3319869B2 (en) * | 1993-06-24 | 2002-09-03 | 三菱電機株式会社 | Semiconductor storage device and method of manufacturing the same |
| JPH07142597A (en) * | 1993-11-12 | 1995-06-02 | Mitsubishi Electric Corp | Semiconductor memory device and manufacture thereof |
| JP3461398B2 (en) | 1994-01-13 | 2003-10-27 | ローム株式会社 | Dielectric capacitor and method of manufacturing the same |
| KR0144932B1 (en) * | 1995-01-26 | 1998-07-01 | 김광호 | Capacitor of semiconductor device and manufacturing method thereof |
| JPH08236719A (en) | 1995-03-01 | 1996-09-13 | Hitachi Ltd | Platinum thin film and semiconductor device, and method of their fabrication |
| JP3417167B2 (en) * | 1995-09-29 | 2003-06-16 | ソニー株式会社 | Capacitor structure of semiconductor memory device and method of forming the same |
| JPH1041481A (en) * | 1996-07-18 | 1998-02-13 | Fujitsu Ltd | High dielectric capacitor and semiconductor device |
| JPH1056140A (en) * | 1996-08-08 | 1998-02-24 | Sharp Corp | Ferroelectric memory element and manufacturing method |
| JPH10242408A (en) * | 1996-12-26 | 1998-09-11 | Sony Corp | Dielectric capacitor, non-volatile memory and semiconductor device |
| KR100228355B1 (en) * | 1996-12-30 | 1999-11-01 | 김영환 | Manufacturing method for memory cell |
| JP3867283B2 (en) * | 1997-06-06 | 2007-01-10 | 日本テキサス・インスツルメンツ株式会社 | Ferroelectric capacitor manufacturing method and ferroelectric memory device manufacturing method |
| JP3319994B2 (en) * | 1997-09-29 | 2002-09-03 | シャープ株式会社 | Semiconductor storage element |
| JP3269528B2 (en) | 1998-03-04 | 2002-03-25 | 日本電気株式会社 | Semiconductor device having capacitive element and method of manufacturing the same |
| JPH11265984A (en) * | 1998-03-17 | 1999-09-28 | Sony Corp | Manufacture of semiconductor device |
| JP3109485B2 (en) * | 1998-08-03 | 2000-11-13 | 日本電気株式会社 | Vapor phase growth method of metal oxide dielectric film |
| JP3159257B2 (en) * | 1998-12-07 | 2001-04-23 | 日本電気株式会社 | Method for manufacturing semiconductor device |
| JP2000216359A (en) * | 1999-01-25 | 2000-08-04 | Toshiba Corp | Manufacture of semiconductor device |
| US6492222B1 (en) * | 1999-12-22 | 2002-12-10 | Texas Instruments Incorporated | Method of dry etching PZT capacitor stack to form high-density ferroelectric memory devices |
| JP2002203948A (en) * | 2001-01-05 | 2002-07-19 | Matsushita Electric Ind Co Ltd | Semiconductor device |
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2001
- 2001-03-16 JP JP2001075485A patent/JP2002280523A/en active Pending
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| Publication number | Publication date |
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| KR20020073443A (en) | 2002-09-26 |
| US20020132426A1 (en) | 2002-09-19 |
| EP1241709A2 (en) | 2002-09-18 |
| JP2002280523A (en) | 2002-09-27 |
| US20040079982A1 (en) | 2004-04-29 |
| CN1375876A (en) | 2002-10-23 |
| US6887752B2 (en) | 2005-05-03 |
| US6730955B2 (en) | 2004-05-04 |
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