CN1285760C - PLasma enhanced chemical deposition method of low vapor-prossure compound - Google Patents
PLasma enhanced chemical deposition method of low vapor-prossure compound Download PDFInfo
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Abstract
本发明的设备通常为(a)闪蒸壳体(116),该壳体带有一单体雾化器(120),用于制备单体颗粒(122)、加热蒸发表面(124),用于从单体颗粒制备蒸发物、和蒸发物出口(128),联接于(b)辉光放电电极(204),该电板从蒸发物产生辉光放电等离子体,其中(c)衬底(104)靠近辉光放电等离子体,以便在其上接受和冷凝辉光放电等离子体。本发明的方法具有下列步骤:(a)闪蒸液体单体,在蒸发物出口形成蒸发物;(b)使蒸发物通过辉光放电电板,从蒸发物产生辉光放电单体等离子体;以及(c)将辉光放电单体等离子体低温冷凝于衬底上,并使辉光放电等离子体交联其上,其中由辉光放电等离子体中产生的自由基导致交联,并达到自固化。
The apparatus of the present invention is generally (a) a flash housing (116) with a monomer atomizer (120) for preparing monomer particles (122), a heated evaporation surface (124) for Evaporate is prepared from monomer particles, and an evaporite outlet (128), coupled to (b) a glow discharge electrode (204), which plate generates a glow discharge plasma from the evaporite, wherein (c) the substrate (104 ) in proximity to the glow discharge plasma for receiving and condensing the glow discharge plasma thereon. The method of the present invention has the following steps: (a) flashing the liquid monomer to form an evaporant at the evaporant outlet; (b) passing the evaporator through a glow discharge electric plate to generate a glow discharge monomer plasma from the evaporator; and (c) low-temperature condensing the glow discharge monomer plasma on the substrate, and crosslinking the glow discharge plasma thereon, wherein free radicals generated in the glow discharge plasma cause the crosslinking, and achieve self- solidified.
Description
本申请系1998年9月29日提交的,申请号为98809599.8,发明名称为“低蒸汽压化合物的等离子体增强化学沉积方法”的申请的分案申请。This application is a divisional application of the application filed on September 29, 1998 with the application number 98809599.8 and the title of the invention is "Plasma Enhanced Chemical Deposition Method for Low Vapor Pressure Compounds".
发明领域field of invention
本发明总的涉及一种制造等离子体聚合膜的方法。具体而言,本发明涉及用闪蒸的低蒸汽压化合物的原料源经等离子体增强化学沉积以制造等离子体聚合膜。本文所用术语“(甲基)丙烯酸的”系指“丙烯酸的或甲基丙烯酸的”。本文所用术语“低温冷凝”及其形态系指当气体与温度低于气体露点的表面接触时气相转变为液相的相变物理现象。The present invention generally relates to a method of making a plasma polymerized film. In particular, the invention relates to the production of plasma polymerized films by plasma enhanced chemical deposition from a source of flashed low vapor pressure compounds. The term "(meth)acrylic" as used herein means "acrylic or methacrylic". As used herein, the term "cryogenic condensation" and its morphology refer to the physical phenomenon of a phase change from a gas phase to a liquid phase when a gas comes into contact with a surface at a temperature below the dew point of the gas.
发明背景Background of the invention
等离子体增强化学蒸汽沉积(PECVD)的基本方法叙述于“薄膜过程”,由J.L.Vossen,W.Kern编,Academie Press,1978,部分IV,章IV-1无机化合物的等离子体沉积,章IV-2辉光放电聚合,本文引为参考。大致说来,辉光放电等离子体产生在平滑的或有尖突物的电极上。按照传统,气体入口将高蒸汽压单体气体引入等离子体区,在其中形成自由基,致使其随后与衬底撞击,单体中的一些自由基在衬底上发生化学键合或交联(固化)。高蒸汽压单体气体包括CH4、SiH4、C2H6、C2H2或从高蒸汽压液体中产生的气体,例如苯乙烯(87.4(30.8℃)下为10乇),环己环(60.4(15.8℃)下为100乇),四甲基二硅氧烷(82.9(28.3℃)下的1,3二氯四甲基二硅氧烷为10乇)和它们的组合,它们能用温和的可控加热蒸发。由于这些高蒸汽压单体气体不易在室温或升温下低温冷凝,依靠自由基对相关表面的化学键合代替低温冷凝会使沉积速度低(最大只有零点几微米/分)。由于相关衬底被等离子体蚀刻对此问题的缓解使之可与低温冷凝相竞争。较低蒸汽压物质不能用于PECVD,因为将较高分子量的单体加热到足以使其蒸发的温度时通常会在蒸发之前引起反应或者使气体的计量难于控制,这二者都是不可行的。The basic method of plasma-enhanced chemical vapor deposition (PECVD) is described in "Thin Film Processes", edited by JL Vossen, W. Kern, Academie Press, 1978, Part IV, Chapter IV-1 Plasma Deposition of Inorganic Compounds, Chapter IV-2 Glow discharge polymerization, incorporated herein by reference. Roughly speaking, glow discharge plasmas are generated on smooth or spiky electrodes. Traditionally, the gas inlet introduces a high vapor pressure monomer gas into the plasma region, where free radicals are formed, causing them to subsequently impinge on the substrate, where some of the free radicals in the monomer chemically bond or crosslink (cure ). High vapor pressure monomer gases include CH 4 , SiH 4 , C 2 H 6 , C 2 H 2 , or gases generated from high vapor pressure liquids, such as styrene (10 Torr at 87.4°F (30.8°C)), ring Hexane (100 Torr at 60.4°F (15.8°C), tetramethyldisiloxane (1,3 dichlorotetramethyldisiloxane at 82.9°F (28.3°C) at 10 Torr) and their Combined, they can be evaporated with gentle, controlled heat. Since these high vapor pressure monomer gases are not easy to condense at room temperature or elevated temperature, relying on the chemical bonding of free radicals to the relevant surface instead of low temperature condensation will result in a low deposition rate (only a few tenths of a micron/minute at most). The mitigation of this problem due to the relative substrate being etched by the plasma makes it competitive with cryogenic condensation. Lower vapor pressure species cannot be used for PECVD because heating higher molecular weight monomers to a temperature sufficient to vaporize them will often cause reactions prior to vaporization or make gas metering difficult to control, both of which are not feasible .
闪蒸方法叙述于美国专利4,954,371中,本文引为参考。这种基本方法亦称为聚合物多层(PML)闪蒸。大体上,一种可辐射聚合和/或可变联的材料在低于该材料的分解温度和聚合温度的温度下供入。该材料雾化为微滴,该微滴尺寸界于1-50微米。通常采用超声雾化器。微滴然后在真空下与其温度高于该材料沸点但其温度又低于引起热解的加热表面接触以被闪蒸。蒸汽低温冷凝在衬底上,然后辐射聚合或交联为很薄的聚合物层。The flash method is described in US Patent 4,954,371, incorporated herein by reference. This basic method is also known as polymer multilayer (PML) flashing. In general, a radiation polymerizable and/or linkable material is fed at a temperature below the decomposition temperature and polymerization temperature of the material. The material is atomized into droplets, the droplet size ranges from 1-50 microns. Ultrasonic nebulizers are usually used. The droplets are then flashed in contact under vacuum with a heated surface at a temperature above the boiling point of the material but below that which causes pyrolysis. The vapor is cryogenically condensed on the substrate and then radiation polymerized or crosslinked into very thin polymer layers.
该材料可包括基本单体或其混合物、交联剂和/或引发剂。闪蒸的缺点在于要求两个相连的步骤,低温冷凝后紧接固化或交联,而且两者在空间和时间上是分开的。The material may include base monomers or mixtures thereof, crosslinkers and/or initiators. The disadvantage of flash evaporation is that it requires two consecutive steps, low temperature condensation followed by curing or crosslinking, and the two are separated in space and time.
根据等离子体聚合膜制造的技术现状,PECVD和闪蒸或辉光放电等离子体沉积和闪蒸都未组合使用。但是据J.D.Affinito、M.E.Gross、C.A.Coronado和P.M.Martin在“聚合物电解质在柔性衬底上的真空沉积”中的报导,无机化合物辉光放电等离子体发生器已与低压气氛下(真空)的闪蒸组合用于衬底的等离子加工。文章发表于“第九届国际真空丝网涂复会议论文集”的全会报告中,1995.11.R.Baskin编,Baskin出版社1995,20-36页,并示于图1。在这个系统中,等离子体发生器100用于蚀刻移动衬底104的表面102,以便接受来自闪蒸106的单体气体流出物,单体气体在被蚀刻的表面102上低温冷凝,然后经过第一固化装置(未示),例如电子束或紫外辐射,以引发交联和固化。等离子体发生器100具有壳体108、气体入口110。气体可以是氧、氮、水或惰性气体如氩、或它们的组合。在其内部,电极112是平滑的或具有一个或多个尖突物114,电极112产生辉光放电并使气体形成等离子体,等离子体蚀刻表面102。闪蒸器106具有壳体116、单体入口118和雾化喷嘴120,例如超声雾化器。流经喷嘴120的物流被雾化为颗粒或微滴122,它们撞击加热表面124,颗粒或微滴122在其上闪蒸为气体,该气体流经一系列挡板126(可任选用)至出口128并在表面102上低温冷凝。虽然采用过其它的气流分布装置,但发现挡板126能够提供适宜的气流分布或均匀度,同时可使表面102易于放大。固化装置(未示)位于闪蒸器106的下游。According to the current state of the art in the manufacture of plasma polymerized films, neither PECVD nor flash evaporation nor glow discharge plasma deposition and flash evaporation are used in combination. However, according to J.D.Affinito, M.E.Gross, C.A.Coronado, and P.M.Martin's report in "Vacuum Deposition of Polymer Electrolyte on Flexible Substrate", inorganic compound glow discharge plasma generators have been combined with low-pressure atmosphere (vacuum) flash Steam combination is used for plasma processing of substrates. The article was published in the plenary report of the "Proceedings of the Ninth International Vacuum Screen Coating Conference", edited by R. Baskin on November 1995, Baskin Press 1995, pages 20-36, and shown in Figure 1. In this system, a plasma generator 100 is used to etch a
因此,这里需要一种制造等离子体聚合层的设备和方法,其速度快且能自固化,无需固化装置。这种设备和方法将特别有利于制造PML聚合物层。Therefore, there is a need for an apparatus and method for producing a plasma polymerized layer that is fast and self-curing without the need for a curing device. Such an apparatus and method would be particularly advantageous for the manufacture of PML polymer layers.
发明简述Brief description of the invention
本发明可从两方面来看,其(1)低蒸汽压单体材料用等离子体增强化学蒸汽沉积在衬底上的设备和方法,其(2)制造自固化聚合物层,特别是自固化PML聚合物层的设备和方法。从两方面来看,本发明是闪蒸和等离子体增强化学蒸汽沉积(PECVD)的组合,这种组合提供了一些出人意料的优点,它能在PECVD方法中应用低蒸汽压单体材料,并提供来自闪蒸方法的自固化,其沉积速率令人吃惊地快于标准PECVD的沉积速率。The present invention can be viewed from two aspects, its (1) apparatus and method for plasma-enhanced chemical vapor deposition of low vapor pressure monomeric materials on substrates, and its (2) manufacture of self-curing polymer layers, especially self-curing Apparatus and methods for PML polymer layers. Viewed in two aspects, the present invention is a combination of flash evaporation and plasma enhanced chemical vapor deposition (PECVD), which offers some unexpected advantages, it enables the use of low vapor pressure monomer materials in PECVD processes, and provides The deposition rate of self-curing from the flash method is surprisingly faster than that of standard PECVD.
一般说来,本发明的设备为(a)闪蒸壳体,其内部有用于制备单体颗粒的单体雾化器,用于将单体颗粒制成蒸汽的加热蒸发表面及蒸发物出口,(b)辉光放电电极,位于蒸发物出口下游,用于从蒸发物制备辉光放电等离子体,其中(c)衬底,它靠近辉光放电等离子体,用于接受辉光放电等离子体并使其衬底上低温冷凝。全部部件宜置于低压(真空)室中。In general, the apparatus of the present invention is (a) a flash shell with a monomer atomizer for preparing monomer particles, a heated evaporation surface for making monomer particles into vapor and an outlet for vaporization, (b) a glow discharge electrode, located downstream of the evaporant outlet, for producing a glow discharge plasma from the evaporant, wherein (c) a substrate, which is adjacent to the glow discharge plasma, for receiving the glow discharge plasma and cryogenic condensation on the substrate. All components should preferably be placed in a low pressure (vacuum) chamber.
本发明的方法具有如下步骤:(a)闪蒸液体单体,在蒸发物出口形成蒸发物;(b)使蒸发物通至辉光放电电极,将蒸发物制成辉光放电单体等离子体;和(c)辉光放电单体等离子体在衬底上低温冷凝,并使辉光放电等离子体在其上交联,其中辉光放电等离子体中产生的自由基导致交联,并达到自固化。The method of the present invention has the following steps: (a) flashing the liquid monomer to form an evaporate at the outlet of the evaporate; (b) passing the evaporate to the glow discharge electrode, and making the evaporate into a glow discharge monomer plasma and (c) low-temperature condensation of the glow discharge monomer plasma on the substrate and cross-linking of the glow discharge plasma thereon, wherein free radicals generated in the glow discharge plasma cause cross-linking and achieve self- solidify.
本发明的一个目的在于提供一种组合闪蒸与辉光放电等离子体沉积的设备和方法。It is an object of the present invention to provide an apparatus and method for combining flash evaporation and glow discharge plasma deposition.
本发明的一个目的在于提供一种制备自固化聚合物层的设备和方法。It is an object of the present invention to provide an apparatus and method for preparing a self-curing polymer layer.
本发明的另一目的在于提供一种制备自固化PML聚合物层的设备和方法。Another object of the present invention is to provide an apparatus and method for preparing a self-curing PML polymer layer.
本发明的还一目的在于提供一种低蒸汽压单体的PECVD沉积的设备和方法。Another object of the present invention is to provide a device and method for PECVD deposition of low vapor pressure monomers.
本发明的优点在于,它对衬底的移动方向是不敏感的,因为沉积的单体层是自固化的。在现有技术中,沉积的单体层需要辐射固化设备,以致衬底的移动应必须从沉积位置移向辐射设备。本发明的另一优点在于,可组合多层材料,例如,本文引作参考的美国专利5,547,508和5,396,644、5,260,095所列的多聚合物层-聚合物和金属的交替层和其它的层皆可用本发明在真空环境中制备。An advantage of the present invention is that it is insensitive to the direction of substrate movement, since the deposited monomer layer is self-curing. In the prior art, the deposited monomer layer requires radiation curing equipment, so that the movement of the substrate should have to be from the deposition position to the radiation equipment. Another advantage of the present invention is that multiple layers of materials can be combined, for example, multiple polymer layers - alternating layers of polymer and metal and others - listed in US Patents 5,547,508 and 5,396,644, 5,260,095, incorporated herein by reference. The invention is prepared in a vacuum environment.
本说明书结论部分具体和明确地对本发明的主题提出了权利要求,但是操作和编排方法两者及其其它优点和目的最好参阅下面的详细叙述结合附图来理解,其中相似的代码系指类似部件。The concluding part of the specification specifically and distinctly claims the subject matter of the invention, but both the method of operation and arrangement and its other advantages and objects are best understood by referring to the following detailed description in conjunction with the accompanying drawings, wherein like codes refer to like part.
附图描述Description of drawings
图1是现有技术中无机化合物辉光发电等离子体发生器与闪蒸相组合的剖面图。Fig. 1 is a cross-sectional view of an inorganic compound glow power generation plasma generator combined with flash evaporation in the prior art.
图2是本发明的闪蒸发和辉光放电等离子体沉积相组合的设备的剖面图。Fig. 2 is a cross-sectional view of the combined flash evaporation and glow discharge plasma deposition apparatus of the present invention.
图2a是本发明的设备的剖面端视图。Figure 2a is a cross-sectional end view of the apparatus of the present invention.
图3是本发明的以衬底作电极的剖面图。Fig. 3 is a cross-sectional view of the present invention using the substrate as an electrode.
优选实施方案描述DESCRIPTION OF THE PREFERRED EMBODIMENT
本发明的设备示于图2。本发明的设备和方法宜于在低压(真空)环境或室中实施。压力宜界于10-1乇-10-6乇。闪蒸器106拥有壳体116、单体入口118和雾化喷嘴120。经喷嘴120的物流雾化为颗粒或微滴122,颗粒或微滴122撞击加热表面124,并在其上颗粒或微滴闪蒸为气体或蒸发物,后者流经一系列挡板126至蒸发物出口128并低温冷凝在表面102上。防止在挡板126和其它内部构件表面上的低温冷凝的措施是将挡板126和其它内部构件表面加热到超过蒸发物的低温冷凝温度或其露点。虽然采用过其它的气流分布装置,但发现挡板126能提供适宜的气流分布和均匀度,同时易使表面102放大。蒸发物出口128将气体导向辉光放电电极204,使蒸发物生成辉光放电等离子体。在图2所示的实施方案中,辉光放电电极204置于辉光放电壳体200之中,壳体有蒸发物入口202,它靠近蒸发物出口128。在这个实施方案中,辉光放电壳体200和辉光放电电极204的温度保持在蒸发物露点以上。辉光放电等离子体流出辉光放电壳体200并在衬底104的表面102上低温冷凝。衬底104的温度宜保持在蒸发物露点以下,宜为室温或冷却至室温以下,以便提高低温冷凝速率。在这个实施方案中,衬底104是在移动,并可以是不导电的、导电的或经外加电压加上偏压,以便将带电粒子从辉光放电等离子体中引出。如果衬底104带偏压,它甚至可取代电极204,本身成为使单体气形成辉光放电等离子体的电极。基本上无偏压意味着未施加外电压,虽然可由于静电或由于与等离子体的相互作用会积累电荷。The apparatus of the present invention is shown in FIG. 2 . The apparatus and methods of the present invention are suitably practiced in a low pressure (vacuum) environment or chamber. The pressure is suitably ranged from 10 -1 Torr to 10 -6 Torr. The
辉光放电电极的一种优选形状示于图2a。在这个实施方案中,辉光放电电极204与衬底104是分开的,而且其形状使从蒸发物入口202来的物流基本上流经电极开口206。任何一种电极形状皆可用于形成辉光放电,但是电极204的优选形状不遮挡从出口202流出的蒸发物形成的等离子体,并且它相对于单体出口缝202和衬底104的对称关系提供在衬底宽度上蒸发物蒸汽流对等离子体的均匀性,同时横向宽度均匀性由衬底的移动来得到。A preferred shape of the glow discharge electrode is shown in Figure 2a. In this embodiment, the
电极204与衬底材104形成的空间是能使等离子体撞击在衬底上的间隙或距离。等离子体从电极延伸出的这段距离将取决于蒸发的物质、电极204/底材104的几何、电压和频率以及压力,其标准方式详细叙述于“气体中的放电”,F.M.Penning,Gordon and Breach Seience出版社,1965,并摘要载于“薄膜方法”,J.L.Vossen、W.Kern编,科学出版社,1978,Part II,Chapter II-1,“辉光放电溅射沉积”,本文将两者均引此为参考。The space formed by the
一种适于间歇操作的设备示于图3。在这个实施方案中,辉光放电电极204与部件300(衬底)足够靠近,以致部件300成了电极204的延伸或组成部分。此外,该部件温度低于露点,以使辉光放电等离子体在部件300上低温冷凝,从而以单体冷凝物涂复部件300并自固化为聚合物层。足够靠近可以是与之连接、靠在其上直接接触或用能使等离子体撞击衬底的间隙或距离。等离子体从电极延伸出的这段距离将取决于蒸发的物质、电极204/底材104的几何、电压和频率以及压力,其标准方式叙述于“气体中的放电”,F.M.Penning,Cordon and Breach出版社,1965,本文引为参考。衬底300在低温冷凝过程中可处于静止或移动中。移动包括旋转和平移,并可以用于控制其上低温冷凝的单体层的厚度和均匀度。由于低温冷凝发生很快,在毫秒和秒之间发生,部件可在涂复之后和在超过涂复温度限值之前卸出。A plant suitable for batch operation is shown in Figure 3. In this embodiment,
操作中,不管是作为在衬底上进行低蒸汽压单体材料的等离子体增强化学蒸汽沉积方法,或者是作为形成自固化聚合物层(特别是PML)方法,本发明的方法具有下列步骤:(a)闪蒸液体单体,在蒸发物出口形成蒸发物;(b)使蒸发物通过辉光放电电极使蒸发物形成辉光放电单体等离子体;和(c)将辉光放电单体等离子体低温冷凝在衬底上,并将辉光放电等离子体交联其上。辉光放电等离子体中产生的自由基导致交联,从而能实现自固化。In operation, whether as a method for plasma enhanced chemical vapor deposition of low vapor pressure monomeric materials on a substrate, or as a method for forming a self-curing polymer layer (particularly PML), the method of the present invention has the following steps: (a) flashing the liquid monomer to form an evaporant at the evaporant outlet; (b) passing the evaporant through the glow discharge electrode to cause the evaporant to form a glow discharge monomer plasma; and (c) passing the glow discharge monomer The plasma cryogenically condenses on the substrate and cross-links the glow discharge plasma. Free radicals generated in the glow discharge plasma lead to crosslinking, which enables self-curing.
闪蒸具有下列步骤:单体液体流入入口;单体液体经喷嘴雾化;和喷雾形成大量单体液体的单体颗粒。喷雾朝向在其上蒸发的加热蒸发表面,并通过蒸发物出口流出。The flash evaporation has the following steps: the monomer liquid flows into the inlet; the monomer liquid is atomized through the nozzle; and the monomer particles of the monomer liquid are sprayed to form a large amount. The spray is directed towards the heated evaporation surface on which it evaporates, and exits through the evaporation outlet.
该液体单体可以是任何液体单体。但是,优选的单体材料或液体在室温下具有低蒸汽压,以致它易于低温冷凝。单体材料的蒸汽压在83(28.3℃)下宜小于10乇,优选在83(28.3℃)下低于1乇,最优选在83(28.3℃)下低于10毫乇。对于同一化学族的单体,低蒸汽压的单体通常亦具有较高的分子量,并比较高蒸汽压、较低分子量的单体易于低温冷凝。液体单体包括但不限于丙烯酸单体例如三丙二醇二丙烯酸酯、四甘醇二丙烯酸酯、三丙二醇单丙烯酸酯、己内酯丙烯酸酯及其组合;甲基丙烯酸单体;及其组合。(甲基)丙烯酸单体特别适于制造分子掺杂聚合物(MDP),光发射聚合物(LEP)和光发射电化学电池(LEC)。The liquid monomer can be any liquid monomer. However, preferred monomeric materials or liquids have low vapor pressures at room temperature so that they readily cryogenically condense. The vapor pressure of the monomeric material is preferably less than 10 Torr at 83°F (28.3°C), preferably less than 1 Torr at 83°F (28.3°C), and most preferably less than 10 mTorr at 83°F (28.3°C). For monomers of the same chemical group, monomers with low vapor pressure usually have higher molecular weight, and are easier to condense at low temperatures than monomers with high vapor pressure and lower molecular weight. Liquid monomers include, but are not limited to, acrylic monomers such as tripropylene glycol diacrylate, tetraethylene glycol diacrylate, tripropylene glycol monoacrylate, caprolactone acrylate, and combinations thereof; methacrylic monomers; and combinations thereof. (Meth)acrylic monomers are particularly suitable for the manufacture of molecularly doped polymers (MDPs), light-emitting polymers (LEPs) and light-emitting electrochemical cells (LECs).
借助于采用闪蒸,单体很快蒸发,以致通常在从加热液体单体到蒸发温度之间发生的反应不再发生。此外,蒸发物供给速率严格地用进入闪蒸器106的进口118的液体单体的进料速率控制。By employing flash evaporation, the monomer evaporates so quickly that the reactions that normally occur between heating the liquid monomer to the evaporation temperature do not take place. In addition, the evaporant feed rate is strictly controlled by the feed rate of liquid monomer into the
除了从液体单体产生的蒸发物外,在闪蒸器106中可以加入附加气体,该气体通过蒸发物出口128上游的气体入口130加入,优选在加热表面124和最靠近加热表面124的第一块挡板126之间加入。附加气体可以是有机的或无机的,其目的包括但不限于镇流、反应及其组合。镇流系指提供足够的分子,以便在低蒸发流量下保持等离子体点火。反应系指生成不同于蒸发物的化合物的化学反应。镇流气体包括但不限于周期表VIII族元素,氢、氧、氮、氯、溴、多原子气体包括例如二氢化碳、一氧化碳、水蒸气及它们的组合。一个示例性的反应是将氧添加到六甲基二硅氧烷中以得到二氧化硅。In addition to the vapor produced from the liquid monomer, additional gas may be added to the
实施例1Example 1
曾经进行了一个实验,以论证示于图2和上面所述的本发明。采用四甘醇二丙烯酸酯作液体单体。加热表面的温度设定在约650(343℃)。液体单体经内径为0.032英寸的毛细管引入入口。超声雾化器喷嘴的内径为0.051英寸。聚合物层的沉积速率对25微米厚聚合物层而言为0.5m/min,对1微米厚的聚合物层而言为100m/min。目检固化的聚合物层未发现任何针孔或裂痕。An experiment was carried out to demonstrate the invention shown in Figure 2 and described above. Tetraethylene glycol diacrylate is used as liquid monomer. The temperature of the heated surface was set at about 650°F (343°C). Liquid monomer was introduced into the inlet via a 0.032 inch internal diameter capillary. The inner diameter of the ultrasonic atomizer nozzle is 0.051 inches. The deposition rate of the polymer layer was 0.5 m/min for a 25 micron thick polymer layer and 100 m/min for a 1 micron thick polymer layer. Visual inspection of the cured polymer layer did not reveal any pinholes or cracks.
结束语conclusion
尽管给出和叙述了本发明的优选实施方案,但对本专业技术人员来说,在不偏离本发明较宽的范围的前提下可作很多变更和修改。因此附录的权利要求试图概括在本发明的实质和范围内的所有这些变化和修改。While the preferred embodiment of the invention has been shown and described, many changes and modifications will occur to those skilled in the art without departing from the broader scope of the invention. The appended claims are therefore intended to cover all such changes and modifications as are within the true spirit and scope of this invention.
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US09/811,874 US6656537B2 (en) | 1997-09-29 | 2001-03-19 | Plasma enhanced chemical deposition with low vapor pressure compounds |
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