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CN113913764B - 一种高迁移率透明导电氧化物薄膜及其制备方法 - Google Patents

一种高迁移率透明导电氧化物薄膜及其制备方法 Download PDF

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CN113913764B
CN113913764B CN202111156884.6A CN202111156884A CN113913764B CN 113913764 B CN113913764 B CN 113913764B CN 202111156884 A CN202111156884 A CN 202111156884A CN 113913764 B CN113913764 B CN 113913764B
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黄仕华
李林华
郝亚非
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Chuzhou Jietai New Energy Technology Co ltd
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Abstract

本发明公开了一种高迁移率透明导电氧化物薄膜及其制备方法，TCO薄膜生长采用反应射频磁控溅射法，在室温下生长碲与钪共掺杂的氧化铟TCO薄膜；溅射用靶材为铟靶、碲靶、钪靶，溅射工作气体为氩气，反应气体为氧气；在TCO薄膜生长之前，溅射室只通入氩气，对三靶进行15‑30分钟的预溅射，去除靶材表面吸附的杂质以及表面氧化物，当TCO薄膜开始生长时，氩气和氧气经过混气室充分混合以后进入溅射室，氩气与氧气的流量之比为50:1~20:1，溅射气压为0.1~0.4 Pa；铟靶溅射功率200 W，碲靶溅射功率为20~30 W，钪靶溅射功率为1~2 W；基底沉积温度为室温，溅射时间为10~20分钟。本发明获得的TCO薄膜中的载流子迁移率高、电阻率较低，同时光透过率也高。

Description

一种高迁移率透明导电氧化物薄膜及其制备方法
技术领域
本发明属于透明导电氧化物薄膜领域，涉及一种高载流子迁移率的透明导电氧化物薄膜及其制备方法。
背景技术
透明导电氧化物(TCO)薄膜具有光透过率高、导电性能优良等特点，在平板显示器、太阳能电池等领域有着广泛的应用。影响TCO薄膜的低电阻率和高光透过率的两个关键因素是载流子浓度和载流子迁移率，为了降低薄膜的电阻率，可以通过增加载流子浓度来实现，但载流子浓度的增加会引起寄生自由载流子吸收，从而降低薄膜的光透过率。增加TCO薄膜的迁移率也可以降低薄膜电阻率，但不会引起光透过率的减少，因此，提高薄膜的迁移率对于获得低电阻率和高光透过率的TCO薄膜非常关键。
材料的迁移率主要由包括声子和杂质在内的载流子散射过程决定，除此之外，还与薄膜内的晶界、位错等结构缺陷相关，而且，薄膜表面和界面的粗糙度也会对载流子进行散射。通过优化掺杂浓度以减少电离杂质和中性散射的影响，或优化材料结构以减少晶界散射，是目前同时获得高迁移率和低电阻率的主要方法。TCO薄膜中的高迁移率是由掺杂杂质的散射截面较低导致的，抑制了氧间隙的散射。在氧化镉(CdO)掺钇、镝、钪或铟等元素，可以抑制缺陷的散射，获得高迁移率的TCO薄膜，然而，镉的毒性阻碍了CdO基TCO薄膜的大规模产业化应用。
发明内容
本发明的目的是提供电阻率低、光学透过率高的氧化铟TCO薄膜，以及此种TCO薄膜的制备方法。
我们通过理论模拟计算发现，在氧化铟(In2O3)掺入碲(Te)元素，氧化铟的最低导带与碲掺杂的相关轨道发生相互重叠的几率很小，因此，碲掺杂的氧化铟中的电子受到掺入杂质原子的散射几率很低，电子的平均自由程时间较长，电子的有效质量较小且与载流子浓度的关联性较弱。另外，与80pm的锡离子(Sn4+)半径相比，97pm的碲离子(Te4+)半径更接近铟离子(In3+)半径(94pm)，从而碲掺杂大幅降低了掺杂原子引起的晶格应变。同时，碲掺杂降低了氧空位浓度，使得氧空位对杂质的散射较低。因此，碲掺杂的氧化铟TCO薄膜中的载流子迁移率高、电阻率较低，同时光透过率也高，这主要归功于碲掺杂剂和氧空位的低杂质散射。
此外，通过计算我们还发现，掺入少量的钪元素，由于钪原子具有较大的电子价态密度，导致氧化铟晶胞的费米能级升高，在费米能级附近形成新的电子占据态，从而降低了氧化铟晶胞的形成自由能，可以增加晶粒成核的几率，增大TCO薄膜中晶粒的尺寸，达到减少晶界散射的目的，提高了薄膜的迁移率。钪的掺杂还起到了一个作用，那就是阻止碲在薄膜后续的退火过程的析出。
在此基础上，本发明采用的技术方案是这样的：
一种高迁移率透明导电氧化物薄膜的制备方法，包括下述步骤：
1)清洗玻璃衬底：以普通玻璃为衬底，反复清洗干净后吹干；
2)TCO薄膜生长：采用反应射频磁控溅射法，在室温下生长碲与钪共掺杂的氧化铟TCO薄膜；溅射用靶材为铟靶、碲靶、钪靶，纯度均大于99.99％，溅射工作气体为氩气，反应气体为氧气，纯度均大于99.999％；溅射室的本底真空优于4×10-5Pa，靶材与样品之间距离为12～15cm；在TCO薄膜生长之前，溅射室只通入氩气，对三靶进行15-30分钟的预溅射，去除靶材表面吸附的杂质以及表面氧化物，当TCO薄膜开始生长时，氩气和氧气经过混气室充分混合以后进入溅射室，氩气与氧气的流量之比为50:1～20:1，溅射气压为0.1～0.4Pa；铟靶溅射功率200W，碲靶溅射功率为20～30W，钪靶溅射功率为1～2W；基底沉积温度为室温，溅射时间为10～20分钟；
3)退火处理：放入氢气氛围中在400～500℃温度下退火20～30分钟。
本发明的另一技术方案是通过以上方法制备得到的高迁移率透明导电氧化物薄膜。
本发明提出了在氧化铟中掺入适量的碲、钪，提高了TCO薄膜中载流子迁移率。采用反应磁控溅射的方法制备碲与钪共掺杂的氧化铟薄膜，然后在氢气氛围下进行退火处理，减少了薄膜中的缺陷密度。从而可获得电阻率低、光学透过率高的氧化铟TCO薄膜。
具体实施方式
1.玻璃衬底的清洗
以普通玻璃为衬底，首先采用去污粉清洗，之后用去离子水冲洗。其次，放入浓硫酸与双氧水的混合比例为2:1的溶液中浸泡10分钟，然后用去离子水反复冲洗干净，之后用酒精冲洗，最后氮气吹干。
2.TCO薄膜生长
采用反应射频磁控溅射(三靶共溅)方法，在室温下生长碲与钪共掺杂的氧化铟TCO薄膜。溅射用靶材为铟靶、碲靶、钪靶，纯度均大于99.99％，溅射工作气体为氩气，反应气体为氧气，纯度均大于99.999％。溅射室的本底真空优于4×10-5Pa，靶材与样品之间距离为12～15cm。在TCO薄膜生长之前，溅射室只通入氩气，对三靶进行15-30分钟的预溅射，去除靶材表面吸附的杂质以及表面氧化物。当TCO薄膜开始生长时，氩气和氧气经过混气室充分混合以后进入溅射室，氩气与氧气的流量之比为50:1～20:1，溅射气压为0.1～0.4Pa。铟靶溅射功率200W，碲靶溅射功率为20～30W，钪靶溅射功率为1～2W。基底沉积温度为室温，溅射时间为10～20分钟。
3.退火处理
在室温下生长的碲与钪共掺杂氧化铟TCO薄膜，随后放入氢气氛围中在400～500℃温度下退火20～30分钟。
4.薄膜性能测试分析
薄膜的厚度用台阶仪测量，方块电阻利用四探针测试仪测量,电导率通过薄膜厚度与方块电阻乘积得到。薄膜的透射率用分光光度计测量，迁移率采用范德堡法测量，并得到载流子浓度。

Claims (2)

1.一种高迁移率透明导电氧化物薄膜的制备方法，包括下述步骤：
1)清洗玻璃衬底：以普通玻璃为衬底，反复清洗干净后吹干；
2)TCO薄膜生长：采用反应射频磁控溅射法，在室温下生长碲与钪共掺杂的氧化铟TCO薄膜；溅射用靶材为铟靶、碲靶、钪靶，纯度均大于99.99％，溅射工作气体为氩气，反应气体为氧气，纯度均大于99.999％；溅射室的本底真空优于4×10-5Pa，靶材与样品之间距离为12～15cm；在TCO薄膜生长之前，溅射室只通入氩气，对三靶进行15-30分钟的预溅射，去除靶材表面吸附的杂质以及表面氧化物，当TCO薄膜开始生长时，氩气和氧气经过混气室充分混合以后进入溅射室，氩气与氧气的流量之比为50:1～20:1，溅射气压为0.1～0.4Pa；铟靶溅射功率200W，碲靶溅射功率为20～30W，钪靶溅射功率为1～2W；基底沉积温度为室温，溅射时间为10～20分钟；
3)退火处理：放入氢气氛围中在400～500℃温度下退火20～30分钟。
2.如权利要求1所述的方法所制备的高迁移率透明导电氧化物薄膜。
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