CN113903823A - Solar laminated cell module, preparation method thereof and photovoltaic system - Google Patents
Solar laminated cell module, preparation method thereof and photovoltaic system Download PDFInfo
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- CN113903823A CN113903823A CN202111138364.2A CN202111138364A CN113903823A CN 113903823 A CN113903823 A CN 113903823A CN 202111138364 A CN202111138364 A CN 202111138364A CN 113903823 A CN113903823 A CN 113903823A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
- H10F77/488—Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention is suitable for the technical field of solar cells, and provides a solar laminated cell module, a preparation method thereof and a photovoltaic system, wherein the solar laminated cell module comprises: the solar cell comprises a crystalline silicon bottom cell positioned at the bottom and a perovskite top cell superposed on the crystalline silicon bottom cell, wherein a plurality of spacers are uniformly distributed on a grid line of the crystalline silicon bottom cell, and the spacers are provided with a plurality of surfaces capable of reflecting and/or scattering sunlight. This solar energy tandem cell subassembly is through evenly spreading a plurality of spacers that can reflect or scatter the sunlight on the grid line of battery at the bottom of the crystalline silicon, in order to form evenly distributed's scattering or reflection array on the battery at the bottom of the crystalline silicon, the sunlight that can't generate electricity that will partly shines on the battery grid line at the bottom of the crystalline silicon is through reflection, the scattering is introduced on the silicon chip, promote the utilization ratio of battery at the bottom of the crystalline silicon to the sunlight, make the photoelectric conversion efficiency of battery at the bottom of the crystalline silicon obtain promoting, further improve solar energy tandem cell subassembly's final efficiency.
Description
Technical Field
The invention belongs to the field of solar cells, and particularly relates to a solar laminated cell module, a preparation method of the solar laminated cell module and a photovoltaic system.
Background
For a perovskite/crystalline silicon tandem cell, the top cell is composed of a perovskite cell with a wider band gap, mainly absorbing most of the solar energy in the visible light band, while the bottom cell is composed of a crystalline silicon cell, absorbing most of the infrared, near-infrared and small amount of visible light transmitted by the top cell. Common perovskite/crystalline silicon laminated cells can be structurally divided into two-end and four-end laminated cells. The four-terminal laminated cell has greater mass production potential because the top cell and the bottom cell do not need to follow the current matching principle and are prepared by simpler preparation process and wider material selection compared with the two-terminal cell.
Compared with a perovskite/crystalline silicon laminated cell at two ends, the four-end cell has the advantages that the transmission of light is blocked due to the addition of the transparent conducting layer, and the optical path is increased due to the gap between the top cell and the bottom cell, so that the crystalline silicon bottom cell cannot absorb sufficient sunlight. In addition, sunlight irradiated onto the front electrode grid line of the crystalline silicon bottom cell cannot be fully utilized, so that the light conversion efficiency of the bottom cell is low, and the final efficiency of the laminated cell is influenced.
Disclosure of Invention
The embodiment of the invention aims to provide a solar laminated cell module, and aims to solve the problems that the photoelectric conversion efficiency of a crystalline silicon bottom cell in the existing perovskite/crystalline silicon laminated cell module is low, and the efficiency of the solar laminated cell module is influenced.
The embodiment of the present invention is achieved by a solar tandem cell module, including: the solar cell comprises a crystalline silicon bottom cell positioned at the bottom and a perovskite top cell superposed on the crystalline silicon bottom cell, wherein a plurality of spacers are uniformly distributed on a grid line of the crystalline silicon bottom cell, and the spacers are provided with a plurality of surfaces capable of reflecting and/or scattering sunlight.
Further, the spacer is a spherical spacer or a polyhedral spacer composed of a plurality of polygons.
Further, the spacer is made of nano silica or an organic resin.
Further, the spherical spacer has a diameter of 10 to 20 μm.
Further, the crystalline silicon bottom cell comprises a PERC cell, an HJT cell or a TOPCon cell.
Further, the perovskite top battery comprises a first transparent conductive film layer, a hole transmission layer, a perovskite light absorption layer, an electron transmission layer and a second transparent conductive film layer from bottom to top.
Furthermore, a first groove for embedding the hole transport layer is formed in the first transparent conductive film layer, and a second groove which penetrates through the hole transport layer, the perovskite light absorption layer and the electron transport layer and is used for embedding the second transparent conductive film layer is formed in the first transparent conductive film layer; the hole transport layer, the perovskite light absorption layer and the electron transport layer are arranged in the first groove, and the hole transport layer, the perovskite light absorption layer and the electron transport layer are arranged in the second groove.
Further, the perovskite electric roof cell is a wide-bandgap semitransparent perovskite cell.
Another embodiment of the present invention is also directed to a method for manufacturing a solar stacked cell module, including:
manufacturing a crystalline silicon bottom battery;
uniformly spreading spacers on the grid lines of the crystalline silicon bottom cells;
manufacturing a perovskite roof battery;
and packaging the crystalline silicon bottom battery and the perovskite top battery.
Further, the step of uniformly spreading spacers on the gate line of the crystalline silicon bottom cell comprises the following steps:
covering a mask plate on the crystalline silicon bottom battery, and reserving a grid line of the crystalline silicon bottom battery;
introducing the spacer into an electrostatic gun by using high-purity nitrogen, and uniformly spreading the spacer on a grid line of the crystalline silicon bottom battery through an electrostatic gun port;
and taking down the mask plate, and collecting the spacers scattered on the mask plate into the electrostatic gun.
Further, the method of making a perovskite-roof battery includes the steps of:
depositing a first transparent conductive film layer on the transparent substrate layer;
cutting the first transparent conductive film layer by laser to form a first groove for embedding the hole transport layer;
depositing the hole transport layer on the first transparent conductive film layer;
preparing a perovskite light absorption layer on the hole transport layer;
coating an electron transport layer on the perovskite absorption layer;
cutting the electron transmission layer by laser to form a second groove which penetrates through the hole transmission layer, the perovskite light absorption layer and the electron transmission layer and is used for embedding the second transparent conductive film layer;
depositing a second transparent conductive film layer on the electron transport layer;
cutting the second transparent conductive film layer by laser to form a third groove which penetrates through the hole transmission layer, the perovskite light absorption layer, the electron transmission layer and the second transparent conductive film layer;
the perovskite roof battery is encapsulated.
Further, said packaging the perovskite-top battery further comprises:
covering the POE adhesive film on the second transparent conductive film layer, and coating butyl rubber on the periphery of the second transparent conductive film layer;
covering a glass substrate on the POE adhesive film;
and (3) packaging the perovskite top battery by adopting a laminating machine.
Further, the packaging the crystalline silicon bottom cell and the perovskite top cell further comprises:
coating butyl rubber on the peripheries of the crystalline silicon bottom battery and the perovskite top battery;
and (5) performing lamination packaging treatment by using a laminator.
Another embodiment of the present invention further provides a photovoltaic system, including the solar tandem cell module as described above.
According to the solar laminated cell module provided by the embodiment of the invention, the plurality of spacers capable of reflecting and/or scattering sunlight are uniformly distributed on the grid line of the crystalline silicon bottom cell to form the uniformly distributed scattering/reflecting array on the crystalline silicon bottom cell, and part of sunlight which is irradiated on the grid line of the crystalline silicon bottom cell and cannot generate electricity is introduced onto the silicon wafer through reflection and scattering, so that the utilization rate of the crystalline silicon bottom cell on the sunlight is improved, the photoelectric conversion efficiency of the crystalline silicon bottom cell is improved, and the final efficiency of the solar laminated cell module is further improved.
Drawings
Fig. 1 is a schematic structural diagram of a solar tandem cell module according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a spherical spacer distribution on a crystalline silicon based cell according to an embodiment of the present invention;
FIG. 3 is a schematic structural view of a perovskite roof battery provided by an embodiment of the invention;
fig. 4 is a flowchart of a method for manufacturing a solar tandem cell module according to an embodiment of the present invention.
The reference numbers illustrate:
1. a glass substrate;
10. a crystalline silicon bottom cell; 11. a main grid; 12. a secondary grid; 20. a spacer;
30. a perovskite roof battery; 31. a first transparent conductive film layer; 32. a hole transport layer; 33. a perovskite light-absorbing layer; 34. an electron transport layer; 35. a second transparent conductive film layer; 36. a first groove; 37. a second groove; 38. and a third groove.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
According to the invention, a plurality of spacers capable of reflecting and/or scattering sunlight are uniformly distributed on the grid line of the crystalline silicon bottom cell to form a uniformly distributed scattering/reflecting array on the crystalline silicon bottom cell, and part of sunlight which irradiates on the grid line of the crystalline silicon bottom cell and cannot generate electricity is introduced onto the silicon wafer through reflection and scattering, so that the utilization rate of the crystalline silicon bottom cell on the sunlight is improved, the photoelectric conversion efficiency of the crystalline silicon bottom cell is improved, and the final efficiency of the solar laminated cell assembly is further improved.
Example one
Referring to fig. 1 to fig. 3, which are schematic structural diagrams of a solar stacked cell device according to a first embodiment of the present invention, for convenience of description, only parts related to the embodiment of the present invention are shown, and the solar stacked cell device according to the embodiment of the present invention includes: a crystalline silicon bottom cell 10 positioned at the bottom and a perovskite top cell 30 positioned at the top, wherein a plurality of spacers 20 are uniformly distributed on the grid line of the crystalline silicon bottom cell 10, and the spacers 20 are provided with a plurality of surfaces capable of reflecting and/or scattering sunlight.
In the embodiment of the invention, the solar laminated cell module is a four-terminal perovskite crystalline silicon laminated cell, and the four-terminal perovskite crystalline silicon laminated cell is composed of a perovskite top cell 30 and a crystalline silicon bottom cell 10 consisting of a plurality of crystalline silicon cells. The plurality of crystalline silicon cells are arranged on the glass substrate and are subjected to series welding to form the crystalline silicon bottom cell 10. The front electrode of the crystalline silicon bottom cell 10 is provided with a plurality of parallel main grids 11 and auxiliary grids 12 vertically connected with the main grids 11.
Further, the spacer is a spherical spacer or a polyhedral spacer composed of a plurality of polygons.
In one embodiment of the present invention, the spacers 20 are spherical spacers uniformly dispersed on the gate line of the front electrode of the crystalline silicon bottom cell 10. The spherical spacers are uniformly distributed on the main grid 11 and the auxiliary grid 12 of the crystalline silicon bottom cell 10 to form a spherical sunlight reflecting/scattering array, sunlight which is irradiated on the grid line and cannot be utilized is introduced onto the silicon chip through the spherical sunlight reflecting/scattering array, and the utilization rate of the crystalline silicon bottom cell 10 to the sunlight is improved.
In another embodiment of the present invention, the spacer 20 is a polyhedral spacer composed of a plurality of polygons, which is a spherical spacer. For example, a polyhedral spherical spacer composed of a plurality of triangles; or a polyhedral spherical spacer composed of a plurality of pentagons; it may also be a diamond or other composition polyhedral spherical spacer.
In another embodiment of the present invention, the polyhedral spacer includes, but is not limited to, a tetrahedron, pentahedron, or hexahedron. The sunlight irradiated onto the grid lines is reflected and/or scattered by a plurality of planes of the polyhedron on the surface of the spacer 20, so that the utilization rate of the sunlight by the crystalline silicon bottom cell 10 is improved.
Further, the spacer 20 is made of nano silica or an organic resin. In the present embodiment, the spacer 20 is made of an organic resin. The spacer 20 is made of an organic resin, which has good scattering/reflecting properties, stable thermal oxidation properties, and good insulating properties.
Further, the spherical spacer has a diameter of 10 to 20 μm. In this embodiment, the diameter of the spherical spacer is 10 μm, and the spherical spacer does not exceed the grid lines, which does not affect the light absorption of the crystalline silicon bottom cell 10 on the one hand, and does not affect the light transmission of the perovskite top cell 30 on the other hand.
It is understood that in other embodiments, the diameter of the spherical spacer may be 12 or 15 μm, and the embodiment is not particularly limited.
According to the embodiment of the invention, a plurality of spacers capable of reflecting and/or scattering sunlight are uniformly distributed on the grid line of the crystalline silicon bottom cell to form a uniformly distributed scattering/reflecting array on the crystalline silicon bottom cell, and part of sunlight which is irradiated on the grid line of the crystalline silicon bottom cell and cannot generate electricity is introduced onto the silicon wafer through reflection and scattering, so that the utilization rate of the crystalline silicon bottom cell on the sunlight is improved, the photoelectric conversion efficiency of the crystalline silicon bottom cell is improved, and the final efficiency of the solar laminated cell assembly is further improved.
Further, the crystalline silicon bottom cell 10 is one of a PERC cell, an HJT cell, and a TOPCon cell. In the embodiment of the invention, a mass-produced single-crystal PERC battery is adopted as a bottom battery of the four-end perovskite/crystalline silicon laminated battery. Wherein the perovskite roof cell 30 used is a wide band gap semi-transparent perovskite cell.
Further, the perovskite-roof battery 30 includes, from bottom to top, a first transparent conductive film layer 31, a hole transport layer 32, a perovskite light absorption layer 33, an electron transport layer 34, and a second transparent conductive film layer 35.
In the present embodiment, the first transparent conductive film 31 is made of one of ITO tin-doped indium oxide, FTO fluorine-doped tin oxide, IWO tungsten-doped indium oxide, and ICO cerium-doped indium oxide. ITO is preferably used as a constituent material of the first transparent conductive film layer 31. Specifically, a first transparent conductive film layer 31 is deposited on the glass substrate 1. The hole transport layer 32 is formed of PTAA (poly [ bis (4-phenyl) (2, 4, 6-trimethyl)Phenyl) amines]) PEDOT: PSS (aqueous solution of high molecular polymer), Spiro-OMeTAD, Poly-TPD, NiOX、CuSCN、CuI、V2O5、MoO3Is made of one of the materials. In this example, an inorganic P-type semiconductor NiO was usedXIs a hole transport layer material.
The perovskite light absorption layer 33 is made of an organic-inorganic hybrid perovskite having a general formula ABX3. Wherein A is CH3NH3+(MA+)、CH(CH2)2At least one of + (FA +) and Cs +, B is Pb2+、Sn2+、Ge2+ wherein X is at least one of Cl-, Br-, I-. In the examples of the present invention, Cs is used0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3The prepared wide-band-gap semitransparent perovskite thin film material is used as a perovskite light absorption layer material.
The electron transport layer 34 is made of PCBM or TiO2、ZnO、SnO2H-PDI and F-PDI. In the present examples, SnO is preferred2The nanoparticles serve as a material for the electron transport layer 34.
The second transparent conductive film layer 35 is made of one material selected from ITO tin-doped indium oxide, FTO fluorine-doped tin oxide, IWO tungsten-doped indium oxide, and ICO cerium-doped indium oxide. In the embodiment of the present invention, it is preferable to use FTO as a constituent material of the second transparent conductive film layer 35.
Further, a first groove 36 for embedding the hole transport layer 32 is formed in the first transparent conductive film layer 13, and a second groove 37 for embedding the second transparent conductive film layer 35 is formed in each of the hole transport layer 32, the perovskite light absorption layer 33 and the electron transport layer 34; and a third groove 38 penetrating the hole transport layer 32, the perovskite light absorption layer 33, the electron transport layer 34 and the second transparent conductive film layer 35.
In the embodiment of the present invention, the second transparent conductive film layer 35 is covered with a POE adhesive film, and the POE adhesive film is covered with a glass back plate.
According to the solar laminated cell module provided by the embodiment of the invention, the plurality of spacers capable of reflecting and/or scattering sunlight are uniformly distributed on the main grid and the auxiliary grid of the front electrode of the crystalline silicon bottom cell to form the uniformly distributed scattering/reflecting array on the crystalline silicon bottom cell, and part of sunlight which irradiates on the grid line of the crystalline silicon bottom cell and cannot generate electricity is introduced onto the silicon chip through reflection and scattering, so that the utilization rate of the crystalline silicon bottom cell on the sunlight is improved, the photoelectric conversion efficiency of the crystalline silicon bottom cell is improved, and the final efficiency of the solar laminated cell module is further improved.
Example two
Referring to fig. 4, which is a schematic flow chart of a method for manufacturing a solar stacked cell module according to a second embodiment of the present invention, for convenience of description, only a portion related to the embodiment of the present invention is shown, and the method for manufacturing a solar stacked cell module according to the previous embodiment includes:
step S11, manufacturing a crystalline silicon bottom cell 10;
in the embodiment of the invention, a mass-produced single crystal PERC battery is preferably used as a bottom battery of the four-terminal perovskite/crystalline silicon laminated battery. The crystalline silicon bottom cell 10 of the solar laminated cell module consists of a plurality of crystalline silicon cells. In other embodiments, the silicon-based bottom cell may also be an hjt (heterojunction with Intrinsic thin) cell or a topcon (tunnel Oxide Passivated contact) cell. The process for manufacturing the crystalline silicon bottom cell belongs to the prior art and is not described in detail in the embodiment.
Specifically, a plurality of crystalline silicon cells are arranged on a glass substrate and series-welded to form the crystalline silicon bottom cell 10. The front electrode of the crystalline silicon bottom cell 10 is provided with a plurality of parallel main grids 11 and auxiliary grids 12 vertically connected with the main grids 11.
Step S21, uniformly spreading the spacers 20 on the gate lines of the crystalline silicon bottom cell 10;
in the embodiment of the present invention, the spacer 20 is a spherical spacer, the spherical spacer is uniformly distributed on the grid line of the front electrode of the crystalline silicon bottom cell 10, and the front electrode of the crystalline silicon bottom cell 10 is provided with a plurality of parallel main grids 11 and a sub-grid 12 vertically connected with the plurality of main grids 11. The spacers 20 are uniformly dispersed on the main grids 11 and the sub-grids 12 of the crystalline silicon bottom cell 10, forming a spherical solar light reflection/scattering array.
Further, the step of uniformly spreading the spacers 20 on the gate line of the crystalline silicon bottom cell comprises the steps of:
covering a mask plate on the crystalline silicon bottom battery 10, and reserving a grid line position of the crystalline silicon bottom battery 10;
introducing the spacer 20 into an electrostatic gun through high-purity nitrogen, and uniformly spreading the spacer 20 on a grid line of the crystalline silicon bottom battery 10 through an electrostatic gun mouth;
the reticle is removed and the spacers 20 scattered on the reticle are collected into the electrostatic gun.
In the embodiment of the invention, the mask plate is a metal mask plate. A plurality of high-reflectivity spherical spacers made of silicone resin, wherein the spherical spacers have a diameter of 10 μm, are prepared in advance. And (3) introducing a plurality of spherical spacers prepared in advance into the electrostatic gun through high-purity nitrogen, and spraying the spherical spacers through a nozzle of the electrostatic gun. The electrostatic spherical spacers are uniformly distributed on the main grid 11 and the auxiliary grid 12 of the crystal silicon bottom cell 10 due to the principle that like poles repel each other, so that the spherical spacer reflection/scattering array is formed.
And finally, taking down the mask plate, and collecting the spherical spacers scattered on the mask plate into the electrostatic gun for the next laminated battery.
Step S31, manufacturing the perovskite roof battery 30;
as shown in fig. 3, in an embodiment of the present invention, the fabrication of the perovskite-roof battery 30 includes the steps of:
step 1: depositing a first transparent conductive film layer 31 on the glass substrate 1;
in the embodiment of the present invention, before depositing the first transparent conductive film layer 31 on the conductive glass substrate 1, the glass substrate 1 is first cleaned. Specifically, ITO conductive glass with high transmittance is used as a transparent conductive substrate, firstly, dust-free paper is dipped in ethanol to wipe the surface of the ITO substrate, then, the ITO substrate is sequentially subjected to ultrasonic cleaning for 15-20 minutes by using a cleaning agent, deionized water, acetone and ethanol, and finally, the ITO substrate is dried in a ventilation oven. The ITO conductive glass is manufactured by coating a layer of indium tin oxide (commonly called ITO) film on the basis of sodium-calcium-based or silicon-boron-based substrate glass by a magnetron sputtering method.
Step 2: cutting the first transparent conductive film layer 31 by laser to form a first groove 36 for embedding the hole transport layer 32;
in the embodiment of the invention, laser scribing and cutting are performed on the first transparent conductive film layer 31 by using laser with the wavelength of 900-1200nm to form the laser scribing first groove 36. The cutting is preferably performed with a laser having a wavelength of 1064 nm.
And step 3: cleaning the first transparent conductive film layer 31;
in the embodiment of the invention, the cut first transparent conductive film layer 31 is cleaned. Specifically, cleaning with cleaning agent, deionized water, acetone and ethanol by ultrasonic cleaning for 15-20 min, drying in a ventilated oven, and introducing O3And (4) performing UV (ozone and ultraviolet oxidation technology) treatment for 20 minutes to finish cleaning.
And 4, step 4: depositing a hole transport layer 32 on the first transparent conductive film layer 31;
in the embodiment of the invention, a layer of NiO with the thickness of about 80-100nm is deposited on the first transparent conductive film layer 31 by a magnetron sputtering methodXA film. The method for monitoring and controlling sputtering is the prior art, and the embodiment is not described in detail.
And 5: preparing a perovskite light absorption layer 33 on the hole transport layer 32;
in the present example, first, Cs was performed0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3Preparation of precursor solution, FAI: PbI2：MABr：PbBr2According to the following steps: 1.1: 0.2: adding the mixture into DMF/DMSO mixture solution at a volume ratio of 4:1 according to a chemical ratio of 0.2 until the solution concentration is 1mol/L to prepare a first solution. Wherein DMF is N, N-dimethylformamide and DMSO is dimethyl sulfoxide.
A second solution was prepared by adding CsI to DMSO solvent to a solution concentration of 1.5 mol/L. And mixing the first solution and the second solution in a ratio of 11: 1, and mixing fullyForming Cs after stirring evenly0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3A precursor liquid.
Secondly, preparing the perovskite thin film by adopting a slot-die slit coating method, and annealing for 60 minutes at 100 ℃ after coating to complete the preparation of the perovskite light absorption layer. In the embodiment of the present invention, the slot-die slot coating method is the prior art, and the embodiment will not be described in detail.
Step 6: coating an electron transport layer 34 on the perovskite light absorption layer 33;
in the examples of the present invention, SnO2The nano particles and deionized water are dissolved in a volume ratio of 1:5, and then coated on the perovskite thin film by adopting a slot-die slit coating method, and the electron transmission layer 34 with the thickness of about 100nm is prepared after annealing at 150 ℃.
And 7: cutting the electron transport layer 34 by laser to form a second groove 37 penetrating through the hole transport layer 32, the perovskite light absorption layer 33 and the electron transport layer 34 and allowing the second transparent conductive film layer 35 to be embedded;
in the embodiment of the invention, laser scribing and cutting are performed on the electron transport layer 34 by using laser with the wavelength of 400-700nm to form the second groove 37 penetrating through the hole transport layer 32, the perovskite light absorption layer 33 and the electron transport layer 34 and used for embedding the second transparent conductive film layer 35. Dicing is preferably performed using a laser with a wavelength of 532 nm.
And 8: depositing a second transparent conductive film layer 35 on the electron transport layer 34;
in the embodiment of the present invention, FTO (conductive glass is fluorine-doped SnO2 conductive glass (SnO2: F), abbreviated as FTO) with a work function more matched with that of the electron transport layer 34 is selected as a material of the second transparent conductive film layer. And depositing an FTO transparent conductive film electrode on the electron transmission layer 34 by adopting a magnetron sputtering method, wherein the thickness of the electrode is about 60 nm.
And step 9: a third groove 38 penetrating the hole transport layer 32, the perovskite light absorption layer 33, the electron transport layer 34, and the second transparent conductive film layer 35 is formed on the second transparent conductive film layer 35 by laser cutting.
In the embodiment of the invention, laser scribing and cutting are carried out on the second transparent conductive film layer 35 by adopting laser with the wavelength of 1064nm, a third groove 38 which penetrates through the hole transport layer 32, the perovskite light absorption layer 33, the electron transport layer 34 and the second transparent conductive film layer 35 is formed, and the prepared perovskite battery is divided into a plurality of sub batteries which are connected in series.
Step 10: perovskite top battery 30 package
In the embodiment of the invention, the second transparent conductive film layer 35 is covered with a POE adhesive film, then butyl rubber for packaging is coated on the periphery of the POE adhesive film, finally a glass back plate is covered on the POE adhesive film, and the perovskite roof battery 30 is packaged by using a laminator, so that the preparation of the perovskite roof battery 30 is completed.
Step S41, the crystalline silicon bottom cell 10 and the perovskite top cell 30 are packaged.
In the present embodiment, the fabricated perovskite top cell 30 is placed on the crystalline silicon bottom cell 10 on which the spherical reflection/scattering array has been dispersed;
coating butyl rubber on the peripheries of the crystalline silicon bottom battery 10 and the perovskite top battery 30;
and performing lamination packaging treatment by using a laminator to obtain the solar laminated cell module of the embodiment of the invention.
In the embodiment of the invention, compared with the existing four-end perovskite and crystalline silicon laminated cell module, the solar laminated cell module prepared by the preparation method provided by the embodiment of the invention has the advantages that a plurality of spacers capable of reflecting and/or scattering sunlight are uniformly distributed on the grid line of the crystalline silicon bottom cell to form a uniformly distributed scattering/reflecting array on the crystalline silicon bottom cell, part of sunlight which is irradiated on the grid line of the crystalline silicon bottom cell and cannot generate electricity is introduced onto a silicon wafer through reflection and scattering, the utilization rate of the crystalline silicon bottom cell on the sunlight is improved, the photoelectric conversion efficiency of the crystalline silicon bottom cell is improved, and the final efficiency of the solar laminated cell module is further improved.
EXAMPLE III
The third embodiment of the invention also provides a photovoltaic system, which comprises the solar laminated cell module.
The photovoltaic system in this embodiment, a plurality of spacers that can reflect and/or scatter sunlight are evenly distributed on the grid line of the cell at the bottom of the crystalline silicon to form evenly distributed scattering/reflection arrays on the cell at the bottom of the crystalline silicon, and the sunlight that can not generate electricity and partially irradiates on the grid line of the cell at the bottom of the crystalline silicon is introduced onto the silicon wafer through reflection and scattering, so that the utilization rate of the cell at the bottom of the crystalline silicon to the sunlight is improved, the photoelectric conversion efficiency of the cell at the bottom of the crystalline silicon is improved, and the power of the photovoltaic system is further improved.
According to the solar laminated cell module, the plurality of spacers capable of reflecting and/or scattering sunlight are uniformly distributed on the grid line of the crystalline silicon bottom cell to form the uniformly distributed scattering/reflecting array on the crystalline silicon bottom cell, and part of sunlight which irradiates on the grid line of the crystalline silicon bottom cell and cannot generate electricity is introduced onto the silicon chip through reflection and scattering, so that the utilization rate of the crystalline silicon bottom cell on the sunlight is improved, the photoelectric conversion efficiency of the crystalline silicon bottom cell is improved, and the final efficiency of the solar laminated cell module is further improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (14)
1. A solar laminated cell module comprises a crystalline silicon bottom cell positioned at the bottom and a perovskite top cell superposed on the crystalline silicon bottom cell, and is characterized in that a plurality of spacers are uniformly distributed on grid lines of the crystalline silicon bottom cell, and the spacers are provided with a plurality of surfaces capable of reflecting and/or scattering sunlight.
2. The solar laminated cell module as claimed in claim 1, wherein the spacer is a spherical spacer or a polyhedral spacer composed of a plurality of polygons.
3. The solar laminated cell module as claimed in claim 1, wherein the spacer is made of nano silica or an organic resin.
4. The solar laminated cell module as claimed in claim 2, wherein the spherical spacer has a diameter of 10 to 20 μm.
5. The solar cell stack assembly of claim 1, wherein the crystalline silicon bottom cell is a PERC cell, an HJT cell, or a topocon.
6. The solar laminated cell module of claim 1, wherein the perovskite top cell comprises, from bottom to top, a first transparent conductive film layer, a hole transport layer, a perovskite light absorption layer, an electron transport layer, and a second transparent conductive film layer.
7. The solar laminate cell assembly of claim 6,
the first transparent conductive film layer is provided with a first groove for embedding the hole transport layer, and a second groove which penetrates through the hole transport layer, the perovskite light absorption layer and the electron transport layer and is used for embedding the second transparent conductive film layer;
the hole transport layer, the perovskite light absorption layer and the electron transport layer are arranged in the first groove, and the hole transport layer, the perovskite light absorption layer and the electron transport layer are arranged in the second groove.
8. The solar laminate cell assembly of claim 1 wherein the perovskite top cell is a wide band gap semi-transparent perovskite cell.
9. A method for manufacturing a solar laminated cell module according to any one of claims 1 to 8, the method comprising the steps of:
manufacturing a crystalline silicon bottom battery;
uniformly spreading spacers on the grid lines of the crystalline silicon bottom cells;
manufacturing a perovskite roof battery;
and packaging the crystalline silicon bottom battery and the perovskite top battery.
10. The method of claim 9, wherein the step of uniformly spreading the spacers on the gate line of the crystalline silicon bottom cell comprises the steps of:
covering a mask plate on the crystalline silicon bottom battery, and reserving a grid line of the crystalline silicon bottom battery;
introducing the spacer into an electrostatic gun by using high-purity nitrogen, and uniformly spreading the spacer on a grid line of the crystalline silicon bottom battery through an electrostatic gun port;
and taking down the mask plate, and collecting the spacers scattered on the mask plate into the electrostatic gun.
11. The method of manufacturing a solar laminate cell module according to claim 9, wherein the method of fabricating a perovskite top cell comprises the steps of:
depositing a first transparent conductive film layer on the transparent substrate layer;
cutting the first transparent conductive film layer by laser to form a first groove for embedding the hole transport layer;
depositing the hole transport layer on the first transparent conductive film layer;
preparing a perovskite light absorption layer on the hole transport layer;
coating an electron transport layer on the perovskite absorption layer;
cutting the electron transmission layer by laser to form a second groove which penetrates through the hole transmission layer, the perovskite light absorption layer and the electron transmission layer and is used for embedding the second transparent conductive film layer;
depositing a second transparent conductive film layer on the electron transport layer;
cutting the second transparent conductive film layer by laser to form a third groove which penetrates through the hole transmission layer, the perovskite light absorption layer, the electron transmission layer and the second transparent conductive film layer;
the perovskite roof battery is encapsulated.
12. The method of fabricating a solar laminate cell module of claim 11, wherein encapsulating the perovskite top cell further comprises:
covering the POE adhesive film on the second transparent conductive film layer, and coating butyl rubber on the periphery of the second transparent conductive film layer;
covering a glass substrate on the POE adhesive film;
and (3) packaging the perovskite top battery by adopting a laminating machine.
13. The method of claim 9, wherein encapsulating the crystalline silicon bottom cell and the perovskite top cell further comprises:
coating butyl rubber on the peripheries of the crystalline silicon bottom battery and the perovskite top battery;
and (5) performing lamination packaging treatment by using a laminator.
14. A photovoltaic system comprising a solar laminate cell module according to claims 1 to 8.
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