CN113783535A - Bias circuit applied to radio frequency power amplifier - Google Patents
Bias circuit applied to radio frequency power amplifier Download PDFInfo
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- CN113783535A CN113783535A CN202111119576.6A CN202111119576A CN113783535A CN 113783535 A CN113783535 A CN 113783535A CN 202111119576 A CN202111119576 A CN 202111119576A CN 113783535 A CN113783535 A CN 113783535A
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- 230000001105 regulatory effect Effects 0.000 claims abstract description 10
- 230000033228 biological regulation Effects 0.000 claims description 7
- 230000035945 sensitivity Effects 0.000 abstract description 10
- 230000003068 static effect Effects 0.000 description 8
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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Abstract
The invention discloses a bias circuit applied to a radio frequency power amplifier, which comprises a dynamic current regulating circuit connected with the radio frequency power amplifier, a first resistor, a second resistor, a third resistor, a fourth resistor and a first capacitor, wherein the dynamic current regulating circuit comprises a first triode, a second triode, a third triode, a fourth triode, a first resistor, a second resistor, a third resistor, a fourth resistor and a first capacitor; the fourth resistor is connected with the external reference voltage, the first resistor and the third resistor, and the third resistor is connected with the fourth triode; the first resistor is connected with the first triode; the collector of the first triode is connected with the base electrode together, and the emitter of the first triode is connected with the fourth triode; the second resistor is connected with the external power supply voltage, the second triode and the third triode; the base electrodes of the first triode, the second triode and the third triode are connected together and connected with the first capacitor; the second triode is connected with the fourth triode; the third triode is connected with the radio frequency power amplifier. The scheme of the invention effectively inhibits the temperature drift performance of the radio frequency power amplifier, reduces the sensitivity of the radio frequency power amplifier to temperature change and improves the working stability.
Description
Technical Field
The invention relates to the field of radio frequency microwaves, in particular to a bias circuit applied to a radio frequency power amplifier.
Background
With the continuous development of mobile communication technology, new mobile communication systems (5G) put higher demands on data transmission rate, and high broadband modulation signals are required for data transmission, thereby increasing the difficulty of designing linear radio frequency power amplifiers.
When the radio frequency power amplifier works, the temperature of the amplifier gradually rises along with the advance of the working time of the power amplifier and the increase of a radio frequency input signal, the current of the amplifier is increased by a power tube in a circuit according to the physical characteristics (the temperature of a PN node rises, electrons in an emitting region are heated and excited, and the total number of drifting electrons increases along with the temperature rise), the working state of the amplifier is influenced, and the linearity of the amplifier is further influenced (the linearity is gradually reduced along with the change of the working state of a transistor). At this time, an additional current needs to be provided by the bias circuit to compensate, so as to improve the circuit linearity.
Referring to fig. 1, fig. 1 is a structural diagram of a bias circuit applied to a radio frequency power amplifier in the prior art, the structure is a mainstream scheme in the prior art, as shown in fig. 1, a static bias current of a transistor Q4 of a radio frequency path is provided by a transistor Q1, a transistor Q3, a resistor R1 and a ballast resistor R2, wherein a transistor Q1, a transistor Q3 and a resistor R1 form a current mirror, and compensation for temperature variation of the transistor Q4 is provided by a transistor Q1, a transistor Q2 cooperating with a ballast resistor R2; in addition, with the increase of the working time of the power amplifier and the input signal RF in, the temperature of the amplifier gradually rises, meanwhile, part of signals of a radio frequency path flow into a bias circuit through a ballast resistor R2, at the moment, part of radio frequency signals leaked to the bias circuit through the rectification function of the triode Q3 are converted into pulsating direct current signals, so that the current Ib of the triode Q3 and the triode Q4 rises, at the moment, the current flowing through the triode Q1, the triode Q2 and the triode Q3 is increased along with the influence of the rise of the temperature, the voltage drop is increased according to the constant resistance of ohm law, the voltage drop at two ends of the resistor R1 is increased, the voltage of a V node is reduced, and the current Ib of the triode Q4 is reduced, so that the compensation of the static bias current of the triode Q4 is realized.
In the scheme, the triode Q1, the triode Q3 and the resistor R1 form a current mirror structure to provide static current for the triode Q4, and the triode Q1 and the triode Q2 work in the same state to form a diode connection form of the triode so as to stabilize the voltage of a Vnode point and perform timely temperature compensation on the triode Q4; however, under the stable current multiplexing condition, it is necessary to ensure that the devices all operate at the same temperature, and due to the influences of process layout rules and different current densities of the radio frequency tube Q4 and the bias circuit tubes Q1, Q2 and Q3, in practical situations, the temperatures of the triode Q1, the triode Q2, the triode Q3 and the triode Q4 cannot be the same, and Vbe4+ I2R 2+ Vbe3 is Vnode, where Vbe4 is the voltage between the base and the emitter of the triode Q4, and Vbe3 is the voltage between the base and the emitter of the triode Q3; the static operating current I2 is influenced by the ballast resistor R2 and has very high sensitivity according to the formula. Therefore, although the current of the triode Q4 can be reduced by the above-mentioned conventional scheme, the temperature drift suppression performance of the bias circuit is poor, and the compensation amount is weak; the ballast resistor R2 has a high sensitivity to amplifier operating condition adjustment and temperature compensation, and affects the linear output of the amplifier.
Therefore, there is a need to provide an improved bias circuit applied to a radio frequency power amplifier to overcome the above-mentioned drawbacks.
Disclosure of Invention
The bias circuit applied to the radio frequency power amplifier effectively inhibits the temperature drift performance of the radio frequency power amplifier, reduces the sensitivity of the radio frequency power amplifier to temperature change, and improves the linearity and the working stability of the radio frequency power amplifier.
In order to achieve the above object, the present invention provides a bias circuit applied to a radio frequency power amplifier, which includes a dynamic current adjusting circuit connected to the radio frequency power amplifier, wherein the dynamic current adjusting circuit dynamically adjusts an input current of the radio frequency power amplifier; the dynamic current regulating circuit comprises a first triode, a second triode, a third triode, a fourth triode, a first resistor, a second resistor, a third resistor, a fourth resistor and a first capacitor; one end of the fourth resistor is connected with an external reference voltage, the other end of the fourth resistor is connected with one end of the first resistor and one end of the third resistor, and the other end of the third resistor is connected with a collector electrode of a fourth triode; the other end of the first resistor is connected with a collector of the first triode; the collector electrode of the first triode is connected with the base electrode, the emitter electrode of the first triode is connected with the collector electrode of the fourth triode, and the emitter electrode of the fourth triode is grounded; one end of the second resistor is connected with the external power voltage, and the other end of the second resistor is connected with the collector electrode of the second triode and the collector electrode of the third triode; the base electrodes of the first triode, the second triode and the third triode are connected together and are connected with one end of the first capacitor, and the other end of the first capacitor is grounded; the emitting electrode of the second triode is connected with the base electrode of the fourth triode; and the emitter of the third triode is connected with the radio frequency power amplifier.
Preferably, a ballast resistor is disposed on each of the triodes.
Preferably, the dynamic current regulating circuit further comprises a first ballast resistor, a second ballast resistor, a third ballast resistor and a fourth ballast resistor; one end of the first ballast resistor is connected with an emitting electrode of the first triode, and the other end of the first ballast resistor is connected with a collector electrode of the fourth triode; one end of the second ballast resistor is connected with the emitting electrode of the second triode, and the other end of the second ballast resistor is connected with the base electrode of the fourth triode; one end of the third ballast resistor is connected with an emitting electrode of the third triode, and the other end of the third ballast resistor is connected with the radio frequency power amplifier; one end of the fourth ballast resistor is connected with the emitting electrode of the fourth triode, and the other end of the fourth ballast resistor is grounded.
Preferably, the bias circuit applied to the rf power amplifier further includes a high-pass filter, and the high-pass filter is connected to the emitter of the third transistor.
Preferably, the high-pass filter includes a second capacitor and a fifth resistor, one end of the second capacitor is connected to the emitter of the third triode, the other end of the second capacitor is connected to one end of the fifth resistor, and the other end of the fifth resistor is grounded.
Compared with the prior art, the bias circuit applied to the radio frequency power amplifier can dynamically adjust the quiescent current of the radio frequency power amplifier according to the temperature change through the dynamic current adjusting circuit, so that the temperature drift performance of the radio frequency power amplifier is inhibited, the sensitivity of the radio frequency power amplifier to the temperature change is reduced, the problem of working state drift of the radio frequency power amplifier under the condition of temperature change is compensated, and the linearity of the radio frequency power amplifier is further improved.
The invention will become more apparent from the following description when taken in conjunction with the accompanying drawings, which illustrate embodiments of the invention.
Drawings
Fig. 1 is a circuit diagram of a bias circuit applied to a radio frequency power amplifier in the prior art.
Fig. 2 is a circuit diagram of a bias circuit applied to a radio frequency power amplifier according to the present invention.
Fig. 3 is a graph comparing the temperature variation curves of the solution of the present invention and the prior art solution.
Detailed Description
Embodiments of the present invention will now be described with reference to the drawings, wherein like element numerals represent like elements. As described above, the present invention provides a bias circuit applied to a radio frequency power amplifier, which effectively improves the linearity and the stability of the operation of the radio frequency power amplifier.
Referring to fig. 2, fig. 2 is a circuit diagram of a bias circuit applied to a radio frequency power amplifier according to the present invention; as shown in the figure, the bias circuit applied to the rf power amplifier of the present invention is characterized by comprising a dynamic current adjusting circuit connected to the rf power amplifier, wherein the dynamic current adjusting circuit dynamically adjusts the input current of the rf power amplifier. Specifically, the dynamic current regulation circuit comprises a first triode Q1, a second triode Q2, a third triode Q3, a fourth triode Q4, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4 and a first capacitor C1; one end of the fourth resistor R4 is connected to an external reference voltage Vref, so that the external reference voltage Vref is input to the dynamic current regulation circuit, the other end of the fourth resistor R4 is connected to one ends of the first resistor R1 and the third resistor R3, and the other end of the third resistor R3 is connected to a collector of the fourth triode Q4; the other end of the first resistor R1 is connected with the collector of the first triode Q1; the collector electrode of the first triode Q1 is commonly connected with the base electrode, the emitter electrode of the first triode Q1 is connected with the collector electrode of the fourth triode Q4, and the emitter electrode of the fourth triode Q4 is grounded; one end of the second resistor R2 is connected to an external power supply voltage VCC, so that the external power supply voltage VCC is input to the dynamic current regulation circuit through the second resistor R2 to provide a working voltage for the dynamic current regulation circuit; the other end of the second resistor R2 is connected with the collector of a second triode Q2 and the collector of a third triode R3; the base electrodes of the first triode Q1, the second triode Q2 and the third triode Q3 are connected together and are connected with one end of the first capacitor C1, and the other end of the first capacitor C1 is grounded; the emitter of the second triode Q2 is connected with the base of a fourth triode Q4; the emitter of the third triode Q3 is connected with the radio frequency power amplifier.
In the dynamic current regulation circuit, as the rf power amplifier starts to operate, the temperatures of the first transistor Q1, the second transistor Q2, the third transistor Q3 and the fourth transistor Q4 will rise with the rise of the temperature of the rf power amplifier (as is well known, the temperature of the rf power transistor Q5 gradually rises with the increase of the input power, so that the ambient temperature of the whole rf power amplifier rises, which in turn causes the temperature of the first transistor Q1, the second transistor Q2, the third transistor Q3 and the fourth transistor Q4 to rise), that is, the transistors generate a positive feedback effect current rise, at this time, the current I4 is I1+ I3, the current of the first transistor Q1 and the third transistor Q3 increases, and the current I1 increases with the current of the first transistor Q1 and the current of the third transistor Q3 increases; meanwhile, the currents of the second triode Q2 and the fourth triode Q4 are also increased, and at the moment, the currents of the second triode Q2 and the fourth triode Q4 of the current I3 are increased and increased; according to ohm's law, because Vnode is Vref-I4R 4, I4 is I1+ I3, and von is Vref- (I1+ I3) R4, as the currents I1 and I3 rise, the resistance of the fourth resistor R4 is unchanged, the voltage drop across the fourth resistor R4 increases, and the voltage of the node Vnode decreases as the voltage drop across the fourth resistor R4 increases, so that the quiescent operating current of the triode Q5 of the radio frequency power amplifier is reduced, and the compensation is realized for the triode Q5 serving as the amplifier; the sensitivity of the radio frequency power amplifier to temperature change is reduced, and the linearity of the amplifier is improved.
In addition, as a preferred embodiment of the present invention, a ballast resistor is provided in each of the transistors, and specifically, the dynamic current regulation circuit further includes a first ballast resistor R6, a second ballast resistor R7, a third ballast resistor R8, and a fourth ballast resistor R9. One end of the first ballast resistor R6 is connected with the emitter of the first triode Q1, and the other end thereof is connected with the collector of the fourth triode Q4; the temperature of the first triode Q1 is increased along with the increase of the temperature of the working environment, and the current is increased, so that the voltage at two ends of the first ballast resistor R6 is increased, the voltage between the base electrode and the emitter of the first triode Q1 is reduced, the base electrode current is reduced, the current fluctuation of the current I1 is further reduced, the voltage sensitivity of the node V node is reduced, and the negative feedback effect is realized. One end of the second ballast resistor R7 is connected to the emitter of the second transistor Q2, and the other end thereof is connected to the base of the fourth transistor Q4, so as to serve as a ballast resistor for the second transistor Q2. One end of the third ballast resistor R8 is connected with the emitter of the third triode Q3, and the other end thereof is connected with the radio frequency power amplifier; the temperature of the third triode Q3 increases with the increase of the temperature of the working environment, the current increases, and at this time, the voltage across the third ballast resistor R8 increases, so that the voltage between the base and the emitter of the third triode Q3 decreases, the base current decreases, and further the current of the third ballast resistor R8 decreases, thereby compensating the current of the triode Q5 serving as an amplifier. One end of the fourth ballast resistor R9 is connected to the emitter of the fourth transistor Q4, and the other end is grounded to serve as the ballast resistor of the fourth transistor Q4, while the other end of the second ballast resistor R7 is connected to the base of the fourth transistor Q4, so that the base current of the fourth transistor Q4 is reduced, the current fluctuation of the current I3 is reduced, and the voltage sensitivity of the node V node is reduced.
In another preferred embodiment of the present invention, the bias circuit applied to the rf power amplifier further includes a high-pass filter, and the high-pass filter is connected to an emitter of the third transistor Q3 to perform high-frequency filtering for the bias circuit. Specifically, the high-pass filter includes a second capacitor C2 and a fifth resistor R5, one end of the second capacitor C2 is connected to the emitter of the third transistor Q3, the other end of the second capacitor C2 is connected to one end of the fifth resistor R5, and the other end of the fifth resistor R5 is grounded. When the radio-frequency signal is too large and enters the bias circuit through the ballast resistor R8, according to the characteristics of a high-pass filter and low high-frequency reactance, redundant radio-frequency power is introduced into an analog ground through the high-pass filters C2 and R5, the fluctuation amplitude of the output current of the third triode Q3 caused by the increase of the radio-frequency power is reduced, the influence of the ballast resistor R8 on temperature change is further reduced, stable bias current is provided for the triode Q5 serving as the amplifier, and the linearity of the amplifier is improved.
In the working process of the circuit, the first triode Q1 is equivalent to a voltage stabilizing diode, the Vonde voltage of the compensation node changes along with the multiplexing of the two currents I1 and I3, and the multiplexing of the two currents I1 and I3 simultaneously compensates the sensitivity of the fourth triode Q4 to the temperature. The whole current multiplexing process of the dynamic current regulating circuit realizes dynamic stable negative feedback on the triode Q5 of the radio frequency amplifier (the bias current I8 is dynamically regulated by the dynamic current regulating circuit, the effect of the triode Q5 that is increased along with the increase of the input power and the current increase of the temperature is compensated), and the problem of the working state drift of the amplifier under the condition of temperature change is compensated.
Referring to fig. 3, fig. 3 is a graph comparing the temperature variation curves of the present invention and the prior art. It can be seen from the figure that the prior scheme of the transistor Q5 as an amplifier under different temperature conditions is compared with the scheme of the invention: the bias circuit (shown by a dotted line in fig. 3) in the existing scheme has weak compensation on the static working current of the triode Q5, the static working current of the triode Q5 increases along with the increase of the temperature, the variation amplitude is severe, the temperature T rises from-35 ℃ to 115 ℃, and the ICC current increases from 67mA to 121 mA; according to the bias circuit (shown by a solid line in fig. 3), the compensation of the static working current of the triode Q5 is strong, the change of the static working current of the triode Q5 along with the increase of the temperature is small, the temperature T is increased from-35 ℃ to 115 ℃, the ICC current is changed from 81mA to 80mA (the highest point is 84mA), and the current change is within 4 mA; therefore, as can be seen from the comparison of fig. 3, the bias circuit applied to the rf power amplifier of the present invention effectively suppresses the temperature drift performance of the rf power amplifier, reduces the sensitivity of the rf power amplifier to temperature changes, and improves the linearity and the operational stability of the rf power amplifier.
The present invention has been described in connection with the preferred embodiments, but the present invention is not limited to the embodiments disclosed above, and is intended to cover various modifications, equivalent combinations, which are made in accordance with the spirit of the present invention.
Claims (5)
1. A bias circuit applied to a radio frequency power amplifier is characterized by comprising a dynamic current regulating circuit connected with the radio frequency power amplifier, wherein the dynamic current regulating circuit dynamically regulates the input current of the radio frequency power amplifier; the dynamic current regulating circuit comprises a first triode, a second triode, a third triode, a fourth triode, a first resistor, a second resistor, a third resistor, a fourth resistor and a first capacitor; one end of the fourth resistor is connected with an external reference voltage, the other end of the fourth resistor is connected with one end of the first resistor and one end of the third resistor, and the other end of the third resistor is connected with a collector electrode of a fourth triode; the other end of the first resistor is connected with a collector of the first triode; the collector electrode of the first triode is connected with the base electrode, the emitter electrode of the first triode is connected with the collector electrode of the fourth triode, and the emitter electrode of the fourth triode is grounded; one end of the second resistor is connected with the external power voltage, and the other end of the second resistor is connected with the collector electrode of the second triode and the collector electrode of the third triode; the base electrodes of the first triode, the second triode and the third triode are connected together and are connected with one end of the first capacitor, and the other end of the first capacitor is grounded; the emitting electrode of the second triode is connected with the base electrode of the fourth triode; and the emitter of the third triode is connected with the radio frequency power amplifier.
2. The bias circuit for a radio frequency power amplifier as claimed in claim 1, wherein a ballast resistor is disposed on each of said transistors.
3. The bias circuit for a radio frequency power amplifier according to claim 2, wherein said dynamic current regulation circuit further comprises a first ballast resistor, a second ballast resistor, a third ballast resistor and a fourth ballast resistor; one end of the first ballast resistor is connected with an emitting electrode of the first triode, and the other end of the first ballast resistor is connected with a collector electrode of the fourth triode; one end of the second ballast resistor is connected with the emitting electrode of the second triode, and the other end of the second ballast resistor is connected with the base electrode of the fourth triode; one end of the third ballast resistor is connected with an emitting electrode of the third triode, and the other end of the third ballast resistor is connected with the radio frequency power amplifier; one end of the fourth ballast resistor is connected with the emitting electrode of the fourth triode, and the other end of the fourth ballast resistor is grounded.
4. The bias circuit for a radio frequency power amplifier of claim 2, further comprising a high pass filter coupled to an emitter of the third transistor.
5. The bias circuit applied to the radio frequency power amplifier as claimed in claim 4, wherein the high pass filter comprises a second capacitor and a fifth resistor, one end of the second capacitor is connected to the emitter of the third transistor, the other end of the second capacitor is connected to one end of the fifth resistor, and the other end of the fifth resistor is grounded.
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| CN202111119576.6A CN113783535A (en) | 2021-09-24 | 2021-09-24 | Bias circuit applied to radio frequency power amplifier |
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| CN202111119576.6A CN113783535A (en) | 2021-09-24 | 2021-09-24 | Bias circuit applied to radio frequency power amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023103742A1 (en) * | 2021-12-07 | 2023-06-15 | 深圳飞骧科技股份有限公司 | Gaas-based hbt process mmic mobile radio frequency power amplifier and linearizing bias circuit |
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2021
- 2021-09-24 CN CN202111119576.6A patent/CN113783535A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023103742A1 (en) * | 2021-12-07 | 2023-06-15 | 深圳飞骧科技股份有限公司 | Gaas-based hbt process mmic mobile radio frequency power amplifier and linearizing bias circuit |
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