CN113782462A - Method and equipment for measuring bonding strength of wafer - Google Patents
Method and equipment for measuring bonding strength of wafer Download PDFInfo
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- CN113782462A CN113782462A CN202110970420.2A CN202110970420A CN113782462A CN 113782462 A CN113782462 A CN 113782462A CN 202110970420 A CN202110970420 A CN 202110970420A CN 113782462 A CN113782462 A CN 113782462A
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000012360 testing method Methods 0.000 claims abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 28
- 238000005259 measurement Methods 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000001514 detection method Methods 0.000 claims description 12
- 238000012545 processing Methods 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 106
- 239000000463 material Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
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- 238000012935 Averaging Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
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- 230000007547 defect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
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- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
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- 239000000523 sample Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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Abstract
The embodiment of the application provides a method and equipment for testing wafer bonding strength, wherein the method comprises the following steps: forming a convex structure in a region to be detected on a first wafer; the raised structures have a first height; bonding a second wafer with the first wafer to form bubbles in the region to be detected; after the wafer is bonded, the protruding structure is provided with a second height in the region to be measured; the second height is less than the first height; measuring the diameter of the bubble; determining a height difference between the first height and the second height according to the diameter of the bubble; and determining the bonding strength of the wafer according to the height difference.
Description
Technical Field
The present application relates to the field of semiconductor manufacturing, and relates to, but is not limited to, a method and apparatus for measuring wafer bonding strength.
Background
In the field of wafer processing and manufacturing, when a wafer bonding process is performed, the bonding Strength (Bond Strength) of a wafer is a key parameter of a bonding machine. But this parameter of bond strength is difficult to measure due to the material and environmental effects of the bond. At present, the method for measuring the bonding strength of the wafer in the prior art has low measurement precision, so that the reliability of the measurement result is low.
Disclosure of Invention
In view of this, the embodiments of the present application provide a method and an apparatus for measuring wafer bonding strength.
In a first aspect, an embodiment of the present application provides a method for measuring a bonding strength of a wafer, where the method includes:
forming a convex structure in a region to be detected on a first wafer; the raised structures have a first height;
bonding a second wafer with the first wafer to form bubbles in the region to be detected; after the wafer is bonded, the protruding structure is provided with a second height in the region to be measured; the second height is less than the first height;
measuring the diameter of the bubble;
determining a height difference between the first height and the second height according to the diameter of the bubble;
and determining the bonding strength of the wafer according to the height difference.
In some embodiments, said determining wafer bonding strength from said height difference comprises: determining the wafer bonding strength according to the following formula:
γ＝Y×Δh
wherein γ is the wafer bonding strength, Y is the young's modulus of the wafer, and Δ h is the height difference.
In some embodiments, said measuring the diameter of said bubble comprises:
the diameter of the bubble is measured using ultrasonic scanning.
In some embodiments, said determining a difference in height between said first height and said second height based on a diameter of said bubble comprises:
determining the second height according to the diameter of the bubble;
determining the height difference based on a difference between the first height and the second height.
In some embodiments, said determining said second height from a diameter of said bubble comprises:
determining the second height according to the diameter and the proportionality coefficient of the bubble; wherein the proportionality coefficient is a ratio between a diameter of the bubble and the second height.
In some embodiments, the forming of the protruding structure in the region to be tested on the first wafer includes:
forming a forming layer having a first height on the first wafer;
covering a photoresist layer on a specific region on the forming layer; the specific area is an area corresponding to the area to be detected on the forming layer on the first wafer;
removing the formed layer outside the specific region;
and removing the photoresist layer on the specific area to form the protruding structure with a first height.
In some embodiments, the raised structures are posts.
On the other hand, the embodiment of the present application provides a test equipment of wafer bonding strength, the equipment includes:
the first bonding assembly is used for fixing a first wafer to be bonded;
the second bonding assembly is used for fixing a second wafer to be bonded; wherein the contact surface of the second bonding assembly and the second wafer is opposite to the contact surface of the first bonding assembly and the first wafer;
the protruding structure manufacturing assembly is used for forming a protruding structure with a first height in the region to be tested of the first bonding assembly; after the first wafer and the second wafer are bonded, forming bubbles in the region to be detected; the raised structure has a second height within the region to be measured;
the measuring assembly is positioned above the first bonding assembly and used for measuring the diameter of the bubble;
and the processing assembly is connected with the measuring assembly and used for determining the bonding strength of the wafer according to the diameter of the bubble.
In some embodiments, the measurement assembly comprises:
an ultrasonic detection unit for measuring the diameter of the bubble using ultrasonic scanning.
In some embodiments, the raised structure fabrication assembly comprises:
a deposition unit for forming a formation layer having a first height on the first wafer;
a photoresist unit for covering a photoresist layer on a specific region on the formation layer; the specific area is an area corresponding to the area to be detected on the forming layer on the first wafer;
a first cleaning unit for removing the formed layer outside the specific region;
and the second cleaning unit is used for removing the photoresist layer on the specific area.
The embodiment of the application provides a method and equipment for measuring wafer bonding strength. Therefore, the quantity of parameters to be measured is reduced, the measurement precision is greatly improved, and the reliability of the measurement result is improved.
Drawings
In the drawings, which are not necessarily drawn to scale, like reference numerals may describe similar components in different views. Like reference numerals having different letter suffixes may represent different examples of similar components. The drawings illustrate generally, by way of example, but not by way of limitation, various embodiments discussed herein.
Fig. 1 is a schematic flowchart of a method for measuring wafer bonding strength according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of an alternative structure of a bump structure before wafer bonding according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram illustrating an alternative structure of a post-wafer-bonding bump structure according to an embodiment of the present disclosure;
FIG. 4 is a schematic view of an alternative configuration of bubbles provided by embodiments of the present application;
FIG. 5 is a schematic diagram of a layered structure provided in an embodiment of the present disclosure;
FIG. 6 is a schematic structural diagram of a photoresist layer provided in an embodiment of the present application;
FIG. 7 is a schematic view of an alternative structure of a bump structure provided in an embodiment of the present application;
FIG. 8 is a schematic view of an alternative structure of a bump structure provided in an embodiment of the present application;
fig. 9 is a schematic view of a wafer bonding strength measuring apparatus according to an embodiment of the present disclosure.
Detailed Description
The present application will be described in further detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application. Also, the embodiments described below are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from these embodiments without inventive step, are within the scope of protection of the present invention.
In a first aspect, an embodiment of the present application provides a method for measuring a bonding strength of a wafer, as shown in fig. 1, the method includes:
s101, forming a protruding structure in a region to be detected on a first wafer; the raised structures have a first height;
step S102, bonding a second wafer with the first wafer to form bubbles in the area to be detected; after the wafer is bonded, the protruding structure is provided with a second height in the region to be measured; the second height is less than the first height;
step S103, measuring the diameter of the bubble;
step S104, determining the height difference between the first height and the second height according to the diameter of the bubble;
and S105, determining the bonding strength of the wafer according to the height difference.
The wafer is a silicon wafer used for manufacturing a silicon semiconductor circuit, and the raw material thereof is silicon. It should be noted that the region to be measured in the embodiment of the present application is located at any position on the surface to be bonded of the first wafer, for example, a circle center region, a circumference region, or any region between the circle center and the circumference, where the specific position is determined according to a position where the wafer bonding strength needs to be measured in an actual operation.
The protrusion structure refers to a protrusion on the first wafer, which is located in the region to be tested and does not damage the wafer, and the material for manufacturing the protrusion structure includes, but is not limited to, ethyl silicate (TEOS), silicon oxide (SiO), silicon nitride (SiN), silicon (Si), or the like. As shown in fig. 2, the surface to be bonded of the first wafer 210 is used as a reference plane, the protruding structure 211 has a first height H1, and the relevant parameters of the first height H1 can be set during the process of forming the protruding structure 211, so that the first height H1 is a known height. For example, a plurality of protruding structures may be formed on the first wafer and arranged in various regions of the surface of the first wafer. In practice, some areas of interest, such as areas with more concentrated defect stress, may be provided with a plurality of raised structures of different sizes and heights for measurement or window boundary detection.
Wafer bonding refers to the process of bonding two wafers, which are homogeneous or heterogeneous and have polished crystal faces, by means of chemical and physical actions, usually by using a wafer bonding machine. If there are raised particles at the wafer Bonding interface and the particles have a certain height, the Bonding interface will be lifted up to form an air gap, which is represented by the Bonding Bubble (referred to as Bubble) generally described above. In the embodiment of the present application, as shown in fig. 3, the protruding structures 211 are located on the surface of the first wafer 210 to be bonded, and therefore, bubbles 220 are formed in the region to be measured.
It should be noted that, in the region outside the region to be measured, the first wafer 210 and the second wafer 230 are tightly bonded, and due to the existence of the bonding force, the protruding structure 211 is deformed to change from the originally known first height H1 to the unknown second height H2. And the bonding force is a pressure such that the second height H2 is lower than the first height H1.
After bonding is completed, the diameter of the bubble can be measured by infrared detection or ultrasonic scanning, etc. In the embodiment of the present application, the diameter of the bubble refers to the length of a line segment from the boundary of one end of the bubble to the boundary of the corresponding other end, the line segment passing through the center of the convex structure. In the case of irregular bubbles, the average value of the diameters of the bubbles can be obtained by averaging a plurality of measurements, so that the error can be reduced and the accuracy can be improved.
In the embodiment of the application, the diameter of the bubble is known to determine the second height of the convex structure, and further, the height difference between the first height and the second height can be determined through simple numerical operation. The height difference here is a positive number, i.e. the height difference is equal to the absolute value of the difference between the first height and the second height.
And finally, determining the wafer bonding strength of the region to be measured according to the height difference. The method has the advantages that the number of parameters needing to be measured is small, and other data can be determined through known parameter values and relevant numerical value operation, so that the method can greatly improve the measurement precision, improve the reliability of the measurement result, is simple and easy to implement, can improve the detection efficiency, and reduce the operation steps in data processing and detection.
In some embodiments, said determining wafer bonding strength from said height difference comprises: determining the wafer bonding strength according to the following formula:
γ＝Y×Δh
wherein γ is the wafer bonding strength, Y is the young's modulus of the wafer, and Δ h is the height difference.
Young's modulus is a physical quantity describing the ability of a solid material to resist deformation, and is one of the elastic moduli. According to huke's law, the stress is proportional to the strain within the elastic limits of an object, the ratio being called the young's modulus of the material, its value depending only on the physical properties of the material itself. For example, the material of the first wafer and the second wafer is silicon, and the young's modulus of silicon is known as y (si) ═ 1.66 × 1012dyn/cm2. Therefore, the bonding strength of the wafer can be obtained only by determining the height difference, namely the difference between the first height and the second height of the protruding structure.
In some embodiments, as shown in fig. 4, the measuring the diameter D1 of the bubble 210 includes:
the diameter D1 of the bubble 210 is measured using ultrasonic scanning.
The principle of ultrasonic scanning is similar to the propagation of light in a medium, and the detection is performed by using the transmission and reflection of acoustic impedance of sound waves with frequency greater than 20000Hz in the medium. When bubbles appear at the bonding interface of the wafer, an interface between different media is formed between the bubbles and the wafer due to the existence of the bubbles, and the acoustic impedance of the interface is different. When the transmitted ultrasonic wave meets the interface, the reflection occurs, and the reflected energy is received by the ultrasonic probe. Because the bubble generates two interfaces at the first wafer and the second wafer respectively, the diameter of the bubble can be determined by the waveform and energy reflected by the two interfaces.
The diameter of the bubble refers to the average diameter of the bubble, and when the bubble is in a regular spherical shape, the diameter of the bubble is the diameter of the sphere; when the bubble is irregularly ellipsoidal, the diameter of the bubble may be an average of the diameters of the measured bubbles.
In the embodiment of the application, the diameter of the bubble can be measured for multiple times by adopting an ultrasonic scanning mode, so that the detection precision can be improved.
In some embodiments, said determining a difference in height between said first height and said second height based on a diameter of said bubble comprises:
determining the second height according to the diameter of the bubble;
determining the height difference based on a difference between the first height and the second height.
In the embodiment of the application, the first height refers to the height of the protruding structure before wafer bonding, and is a known height; the second height is the height of the bump structure after wafer bonding and is an unknown height. This is due to the pressure provided by the bonding of the wafer, which causes the projection structure to deform, resulting in the first height being unequal to the second height. The second height in this application can be determined by numerical calculation based on the diameter of the bubble, which is a parameter that does not need to be measured.
After the determination of the value of the second height, the difference in height, i.e. the difference between the first height and the second height, is determined using the numerical movement, wherein the difference takes a positive value.
According to the embodiment of the application, the height difference can be determined through numerical operation according to the diameter of the bubble obtained through measurement, so that the error is further reduced, and the reliability of the measurement result is improved.
In some embodiments, said determining said second height from a diameter of said bubble comprises:
determining the second height according to the diameter and the proportionality coefficient of the bubble; wherein the proportionality coefficient is a ratio between a diameter of the bubble and the second height.
In the field of wafer processing and manufacturing, the diameter of the bubble generated after wafer bonding and the height of the convex structure generating the bubble have a proportionality coefficient. In the present embodiment, the proportionality coefficient is approximately 2, i.e. the ratio of the diameter of the bubble to the second height of the protruding structure is 2: 1. When the diameter of the bubble is measured, the value may be divided by two to obtain a second height value.
The method for determining the second height is simple and convenient, and the detection efficiency can be increased within the acceptable error range.
In some embodiments, as shown in fig. 5 to 8, the forming of the protruding structure 211 in the region to be tested (not shown) on the first wafer 210 includes:
as shown in fig. 5, a forming layer 240 having a first height H1 is formed on the first wafer 210;
as shown in fig. 6, a photoresist layer 250 is coated on a specific region on the formation layer 240; the specific region is a region of the first wafer 210 corresponding to the region to be measured on the formation layer 240;
as shown in fig. 7, the formation layer 240 is removed outside the specific region;
as shown in fig. 8, the photoresist layer 250 on the specific region is removed, and the protruding structure 211 having the first height H1 is formed.
The forming layer in the embodiment of the present application refers to a material layer forming the protruding structure, and the material of the material layer is the same as that of the protruding structure, for example: ethyl silicate (TEOS), silicon oxide (SiO), silicon nitride (SiN), silicon (Si), or the like; the height of the first protrusion is the same as that of the first protrusion. Illustratively, the forming Layer having the first height may be formed by depositing a TEOS material on the first wafer by one of Chemical Vapor Deposition (CVD), Atomic Layer Deposition (ALD), Physical Vapor Deposition (PVD), or the like.
Then, the region to be measured on the first wafer is determined according to actual requirements, and a photoresist layer covers the corresponding specific region on the forming layer. The photoresist related to the embodiment of the application is a positive photoresist, and after the coating is exposed and developed, the exposed part can be dissolved. For example, the photoresist of a specific region where a protruding structure is to be formed is protected by a mask plate, so that other regions are dissolved by exposure to expose a formation layer outside the specific region. Here, the manner of removing the formation layer includes, but is not limited to, Plasma Etching (Plasma Etching), Wet Etching (Wet Etching), Chemical Mechanical polishing (cmp), or the like. In the embodiment of the application, a plasma etching process is adopted, and molecules or atoms on the surface of a formation layer outside a specific area are contacted with total active atoms of plasma and react by using higher pressure and lower radio frequency power, so that gaseous products are formed and leave the surface of a wafer.
Finally, the mask on the photoresist layer is removed, and the photoresist layer is removed by Photolithography (Photolithography), thereby obtaining the protrusion structure with the first height.
The protruding structure manufactured by the embodiment of the application can be used for forming the known first height, the wafer cannot be damaged, the quantity of measured parameters can be reduced, and the reliability of a measuring result is improved.
In some embodiments, the raised structures are posts.
In the embodiment of the application, the convex structures can be in the shapes of cylinders, prisms and the like. The raised structure of the cylinder not only meets certain rigidity, but also can form more regular bubbles, so that the error can be reduced when the diameter of the bubbles is measured subsequently, and the precision of data is improved.
As shown in fig. 9, an embodiment of the present application provides a device 900 for testing wafer bonding strength, the device including:
a first bonding assembly 300 for holding a first wafer to be bonded;
a second bonding assembly 400 for holding a second wafer to be bonded; wherein the second bonding assembly 400 is opposite the second wafer contact surface 410 and the first bonding assembly 300 is opposite the first wafer contact surface 310;
a bump structure manufacturing assembly 500 for forming a bump structure having a first height in the region to be tested of the first bonding assembly 300; after the first wafer and the second wafer are bonded, forming bubbles in the region to be detected; the raised structure has a second height within the region to be measured;
a measuring assembly 600 positioned above the first bonding assembly 300 for measuring the diameter of the bubble;
and the processing assembly 700 is connected with the measuring assembly 600 and used for determining the bonding strength of the wafer according to the diameter of the bubble.
The bonding assembly refers to a device that keeps a wafer to be bonded unchanged or not moving by using absorption, clamping, adhesion and the like, and performs a bonding operation, and includes, but is not limited to, a suction cup, a robot arm, a buckle and the like. In the embodiment of the application, the first bonding assembly may be a vacuum chuck, which is based on the principle that a vacuum device sucks the first wafer to generate negative pressure so as to fix the first wafer; the second key assembly may be a robot. When wafers are bonded, a first wafer and a second wafer need to be opposite to each other, so that the contact surface of the first bonding assembly and the first wafer is opposite to the contact surface of the second bonding assembly and the second wafer.
The bump structure manufacturing assembly in the embodiment of the application is used for manufacturing the bump structure with the first height on the first wafer, and the bump structure has certain rigidity. Due to the existence of the protruding structure, when the two wafers are bonded, the wafer in the region to be measured can be jacked up, so that bubbles are formed. On the other hand, during the bonding process, the two wafers are subjected to pressure and act on the bump structures to deform the bump structures, and the first height is changed into the corresponding second height.
After the bubbles on the area to be measured are formed, the diameters of the bubbles need to be measured by the measuring assembly. The measuring assembly may be an ultrasonic scanner or an infrared detector, etc.
After the diameter of the bubble is obtained by the component to be measured, the value is entered into the processing component. The processing assembly determines the height difference between the first height and the second height of the convex structure according to the diameter of the bubble, inputs the height difference into a corresponding processing unit, and calculates the height difference according to the following formula:
γ＝Y×Δh
wherein γ is the wafer bonding strength, Y is the young's modulus of the wafer, and Δ h is the height difference. And finally determining the wafer bonding strength of the region to be detected, and outputting a data result by an output unit of the processing assembly.
In some embodiments, the measurement assembly comprises:
an ultrasonic detection unit for measuring the diameter of the bubble using ultrasonic scanning.
In the embodiment of the application, the acoustic impedance of the sound wave with the frequency greater than 20000Hz in the medium is transmitted and reflected for detection, the sound wave is sent out by an ultrasonic detection unit in the measurement assembly, and the waveform and the energy reflected from the interface of the bubble and the wafer are received, so that the diameter of the bubble is determined.
In some embodiments, the raised structure fabrication assembly comprises:
a deposition unit for forming a formation layer having a first height on the first wafer;
a photoresist unit for covering a photoresist layer on a specific region on the formation layer; the specific area is an area corresponding to the area to be detected on the forming layer on the first wafer;
a first cleaning unit for removing the formed layer outside the specific region;
and the second cleaning unit is used for removing the photoresist layer on the specific area.
The deposition unit in the embodiment of the present application may deposit a material, such as but not limited to ethyl silicate, silicon oxide, silicon nitride, or silicon, the same as the protruding structure by any means of chemical vapor deposition, atomic layer deposition, or physical vapor deposition, to form a formation layer having a first height.
After the deposition unit stops working, the photoresist unit can coat positive photoresist on a specific area and is protected by a mask plate.
Then, the first cleaning unit may be a plasma etching unit, the exposed and developed photoresist is etched, and the layer formed outside the specific region is removed by plasma etching, leaving the protrusion structure and the photoresist above the protrusion structure.
Finally, the second cleaning unit needs to remove the remaining photoresist, and a photoetching unit can be adopted in the embodiment of the application, so that the photoresist above the protruding structure can be simply and conveniently removed.
It should be noted that the features disclosed in the several method or apparatus embodiments provided in the present application may be combined arbitrarily to obtain new method or apparatus embodiments without conflict.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A method for testing wafer bonding strength, the method comprising:
forming a convex structure in a region to be detected on a first wafer; the raised structures have a first height;
bonding a second wafer with the first wafer to form bubbles in the region to be detected; after the wafer is bonded, the protruding structure is provided with a second height in the region to be measured; the second height is less than the first height;
measuring the diameter of the bubble;
determining a height difference between the first height and the second height according to the diameter of the bubble;
and determining the bonding strength of the wafer according to the height difference.
2. The method of claim 1, wherein determining the wafer bonding strength from the height difference comprises: determining the wafer bonding strength according to the following formula:
γ＝Y×Δh
wherein γ is the wafer bonding strength, Y is the young's modulus of the wafer, and Δ h is the height difference.
3. The method of claim 1, wherein said measuring a diameter of said bubble comprises:
the diameter of the bubble is measured using ultrasonic scanning.
4. The method of claim 1, wherein determining the difference in height between the first height and the second height based on the diameter of the bubble comprises:
determining the second height according to the diameter of the bubble;
determining the height difference based on a difference between the first height and the second height.
5. The method of claim 4, wherein said determining the second height based on the diameter of the bubble comprises:
determining the second height according to the diameter and the proportionality coefficient of the bubble; wherein the proportionality coefficient is a ratio between a diameter of the bubble and the second height.
6. The method of claim 1, wherein forming a raised structure in the region to be tested on the first wafer comprises:
forming a forming layer having a first height on the first wafer;
covering a photoresist layer on a specific region on the forming layer; the specific area is an area corresponding to the area to be detected on the forming layer on the first wafer;
removing the formed layer outside the specific region;
and removing the photoresist layer on the specific area to form the protruding structure with a first height.
7. The method of claim 1, wherein the raised structures are posts.
8. An apparatus for testing wafer bonding strength, the apparatus comprising:
the first bonding assembly is used for fixing a first wafer to be bonded;
the second bonding assembly is used for fixing a second wafer to be bonded; wherein the contact surface of the second bonding assembly and the second wafer is opposite to the contact surface of the first bonding assembly and the first wafer;
the protruding structure manufacturing assembly is used for forming a protruding structure with a first height in the region to be tested of the first bonding assembly; after the first wafer and the second wafer are bonded, forming bubbles in the region to be detected; the raised structure has a second height within the region to be measured;
the measuring assembly is positioned above the first bonding assembly and used for measuring the diameter of the bubble;
and the processing assembly is connected with the measuring assembly and used for determining the bonding strength of the wafer according to the diameter of the bubble.
9. The apparatus of claim 8, wherein the measurement assembly comprises:
an ultrasonic detection unit for measuring the diameter of the bubble using ultrasonic scanning.
10. The apparatus of claim 8, wherein the raised structure fabrication assembly comprises:
a deposition unit for forming a formation layer having a first height on the first wafer;
a photoresist unit for covering a photoresist layer on a specific region on the formation layer; the specific area is an area corresponding to the area to be detected on the forming layer on the first wafer;
a first cleaning unit for removing the formed layer outside the specific region;
and the second cleaning unit is used for removing the photoresist layer on the specific area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110970420.2A CN113782462B (en) | 2021-08-23 | 2021-08-23 | Method and equipment for measuring bonding strength of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110970420.2A CN113782462B (en) | 2021-08-23 | 2021-08-23 | Method and equipment for measuring bonding strength of wafer |
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| Publication Number | Publication Date |
|---|---|
| CN113782462A true CN113782462A (en) | 2021-12-10 |
| CN113782462B CN113782462B (en) | 2024-06-07 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1628339A1 (en) * | 2004-08-19 | 2006-02-22 | S.O.I.Tec Silicon on Insulator Technologies | Heat treatment prior to bonding two wafers |
| US20080011096A1 (en) * | 2005-01-08 | 2008-01-17 | X-Fab Semiconductor Foundries Ag | Electrical Determination Of The Connection Quality Of A Bonded Wafer Connection |
| CN110349877A (en) * | 2019-07-12 | 2019-10-18 | 芯盟科技有限公司 | Detect the method and wafer bonding board of wafer bonding intensity |
| CN112687566A (en) * | 2020-12-25 | 2021-04-20 | 上海华力集成电路制造有限公司 | Method for measuring bonding strength in bonded wafer surface and method for forming bubble core |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1628339A1 (en) * | 2004-08-19 | 2006-02-22 | S.O.I.Tec Silicon on Insulator Technologies | Heat treatment prior to bonding two wafers |
| US20080011096A1 (en) * | 2005-01-08 | 2008-01-17 | X-Fab Semiconductor Foundries Ag | Electrical Determination Of The Connection Quality Of A Bonded Wafer Connection |
| CN110349877A (en) * | 2019-07-12 | 2019-10-18 | 芯盟科技有限公司 | Detect the method and wafer bonding board of wafer bonding intensity |
| CN112687566A (en) * | 2020-12-25 | 2021-04-20 | 上海华力集成电路制造有限公司 | Method for measuring bonding strength in bonded wafer surface and method for forming bubble core |
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