CN113764153B - Multilayer magnetic thin film device, preparation method thereof and magnetic memory - Google Patents
Multilayer magnetic thin film device, preparation method thereof and magnetic memory Download PDFInfo
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- CN113764153B CN113764153B CN202111040979.1A CN202111040979A CN113764153B CN 113764153 B CN113764153 B CN 113764153B CN 202111040979 A CN202111040979 A CN 202111040979A CN 113764153 B CN113764153 B CN 113764153B
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 186
- 239000010409 thin film Substances 0.000 title claims abstract description 34
- 230000015654 memory Effects 0.000 title claims abstract description 9
- 238000002360 preparation method Methods 0.000 title abstract description 4
- 239000010410 layer Substances 0.000 claims abstract description 144
- 230000008878 coupling Effects 0.000 claims abstract description 24
- 238000010168 coupling process Methods 0.000 claims abstract description 24
- 238000005859 coupling reaction Methods 0.000 claims abstract description 24
- 239000011229 interlayer Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 44
- 230000005294 ferromagnetic effect Effects 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 229910005916 GeTe2 Inorganic materials 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 6
- 239000000696 magnetic material Substances 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 230000003993 interaction Effects 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 238000004549 pulsed laser deposition Methods 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 238000012360 testing method Methods 0.000 description 8
- 230000002159 abnormal effect Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000003302 ferromagnetic material Substances 0.000 description 3
- 238000009813 interlayer exchange coupling reaction Methods 0.000 description 3
- 230000002547 anomalous effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- -1 transition metal chalcogenides Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
Abstract
The invention discloses a multilayer magnetic thin film device, a preparation method thereof and a magnetic memory, wherein the multilayer magnetic thin film device comprises the following structures which are sequentially arranged from bottom to top: a substrate, a first magnetic layer, a nonmagnetic layer, a second magnetic layer; the Curie temperature of the first magnetic layer is higher than that of the second magnetic layer; the nonmagnetic layer is configured to achieve interlayer exchange magnetic coupling between the first magnetic layer and the second magnetic layer.
Description
Technical Field
The invention relates to the technical field of magnetic memories, in particular to a multilayer magnetic thin film device, a preparation method thereof and a magnetic memory.
Background
In recent years, two-dimensional materials have been widely paid attention and studied due to their excellent dimensional characteristics. From the discovery of graphene in 2004, to transition metal chalcogenides, to the more recently emerging two-dimensional ferromagnetic materials, such as CrI 3、Cr2Ge2Te6、Fe3GeTe2, etc. These new low-dimensional materials with magnetism are the material basis for constructing new spintronics devices, and bring new hopes for the spintronics devices.
Compared with a two-dimensional semiconductor Crl 3 and a two-dimensional insulator Cr 2Ge2Te6, fe 3GeTe2 (FGT) serving as an intrinsic ferromagnetic metal material has larger intrinsic perpendicular magnetic anisotropy, higher Curie temperature (about 220K) and relatively better stability, is a very promising material capable of realizing room-temperature ferromagnetism through an interface, and has extremely high application potential.
However, the types of the two-dimensional materials with intrinsic magnetism prepared so far are still very limited, the Curie temperature of the known magnetic van der Waals materials such as Fe 3GeTe2、Cr2Ge2Te6 is far lower than the room temperature, and the air stability is poor, so that the future practical application of the two-dimensional materials is greatly limited.
Disclosure of Invention
In view of the above, the present invention provides a multilayer magnetic thin film device, a method for manufacturing the same, and a magnetic memory, so as to at least partially solve the above technical problems.
The embodiment of the invention provides a multilayer magnetic thin film device, which comprises the following structures from bottom to top: a substrate, a first magnetic layer, a nonmagnetic layer, a second magnetic layer; the Curie temperature of the first magnetic layer is higher than that of the second magnetic layer; the nonmagnetic layer is configured to achieve interlayer exchange magnetic coupling between the first magnetic layer and the second magnetic layer.
According to an embodiment of the present invention, the interlayer exchange magnetic coupling includes any one of ferromagnetic coupling and antiferromagnetic coupling.
According to an embodiment of the present invention, the first magnetic layer includes a three-dimensional magnetic material; the second magnetic layer comprises a two-dimensional ferromagnetic van der Waals material.
According to an embodiment of the present invention, the material of the first magnetic layer includes any one of Co, coFe, coP, fePt, coFeB.
According to an embodiment of the present invention, the material of the second magnetic layer includes any one of Fe 3GeTe2、Cr2Ge2Te6.
According to an embodiment of the present invention, the material of the nonmagnetic layer includes any one of a metal, a metal oxide, and an amorphous material.
According to an embodiment of the present invention, the metal includes any one of Ta, pt, ru, au, ag, cu; the metal oxide comprises any one of MgO and Al 2O3; the amorphous material includes NiP.
According to an embodiment of the present invention, the thickness of each of the first magnetic layer and the second magnetic layer is 0.5 to 5nm.
The embodiment of the invention also provides a method for preparing the multilayer magnetic thin film device, which comprises the following steps: providing a substrate; growing a first magnetic layer on the substrate; growing a nonmagnetic layer on the first magnetic layer; growing or transferring a stacked second magnetic layer on the nonmagnetic layer; interlayer exchange magnetic coupling is achieved between the first magnetic layer and the second magnetic layer by magnetic exchange interactions.
According to an embodiment of the present invention, the method for growing the first magnetic layer and/or the second magnetic layer includes any one of the following steps: physical vapor deposition, magnetron sputtering, molecular beam epitaxy, chemical vapor deposition, thermal evaporation, electron beam evaporation, pulsed laser deposition, atomic layer deposition.
The embodiment of the invention also provides a magnetic memory which comprises the multilayer magnetic thin film device.
According to the multilayer magnetic thin film device provided by the embodiment of the invention, the first magnetic layer with higher Curie temperature and the second magnetic layer with lower Curie temperature are subjected to interlayer exchange coupling through the non-magnetic layer, so that the Curie temperature of the multilayer magnetic thin film device is improved, and the multilayer magnetic thin film device has good perpendicular magnetic anisotropy.
Drawings
FIG. 1 schematically illustrates a cross-sectional structure of a multilayer magnetic thin film device in accordance with an embodiment of the present invention;
FIG. 2 schematically illustrates a schematic structure of a PCP/FGT multilayer film device that is subjected to an abnormal Hall test in an embodiment of the present invention;
fig. 3 schematically illustrates a graph of the results of an anomalous hall test performed on a multilayer magnetic thin film device in accordance with an embodiment of the invention.
Detailed Description
The present invention will be further described in detail below with reference to specific embodiments and with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the present invention more apparent.
The Curie temperature of the two-dimensional magnetic Van der Waals material is far lower than the room temperature, and the air stability is poor, so that the application range of the two-dimensional magnetic Van der Waals material is limited. In order to expand the application range of the two-dimensional magnetic van der Waals material, the invention needs to have good perpendicular magnetic anisotropy while ensuring that the Curie temperature of the two-dimensional ferromagnetic van der Waals material is higher than room temperature.
The embodiment of the invention provides a multilayer magnetic thin film device, which comprises the following structures from bottom to top: a substrate, a first magnetic layer, a nonmagnetic layer, a second magnetic layer; the Curie temperature of the first magnetic layer is higher than that of the second magnetic layer; the nonmagnetic layer is configured to achieve interlayer exchange magnetic coupling between the first magnetic layer and the second magnetic layer.
Fig. 1 schematically illustrates a structural diagram of a multilayer magnetic thin film device in an embodiment of the present invention.
As shown in fig. 1, the multilayer magnetic thin film device includes a substrate 1, a first magnetic layer 2, a nonmagnetic layer 3, and a second magnetic layer 4 in this order from bottom to top.
According to the embodiment of the invention, the Curie temperature of the first magnetic layer is higher than that of the second magnetic layer, the first magnetic layer and the second magnetic layer are ferromagnetic materials with good perpendicular magnetic anisotropy, and the ferromagnetic materials have perpendicular magnetic anisotropy, and the perpendicular magnetic anisotropy is the magnetic dissimilarity of the thin film planes perpendicular to the first magnetic layer and the second magnetic layer.
According to the embodiment of the invention, the nonmagnetic layer is arranged between the first magnetic layer and the second magnetic layer and is used for realizing interlayer exchange magnetic coupling between the first magnetic layer and the second magnetic layer, and the type and the strength of the interlayer exchange magnetic coupling can be selected by the type and the thickness of the material of the nonmagnetic layer.
According to the multilayer magnetic thin film device provided by the embodiment of the invention, the first magnetic layer with higher Curie temperature and the second magnetic layer with lower Curie temperature are subjected to interlayer exchange coupling through the non-magnetic layer, so that the Curie temperature of the multilayer magnetic thin film device is improved, and the multilayer magnetic thin film device has good perpendicular magnetic anisotropy.
According to an embodiment of the present invention, the interlayer exchange magnetic coupling includes any one of ferromagnetic coupling and antiferromagnetic coupling.
In the embodiment of the invention, different materials are selected as the nonmagnetic layers, so that the spin magnetic moment included angle of the 3d electrons of the adjacent atoms between the first magnetic layer and the second magnetic layer is zero, namely magnetic moments are arranged in parallel in the same direction, and ferromagnetic coupling is realized. Or the spin magnetic moment included angle of the 3d electrons of the adjacent atoms between the first magnetic layer and the second magnetic layer is 180 degrees, namely magnetic moments are arranged in anti-parallel, so that anti-ferromagnetic coupling is realized. One skilled in the art can achieve ferromagnetic coupling or antiferromagnetic coupling by selecting the material of the nonmagnetic layer according to the needs of the application.
According to an embodiment of the present invention, the first magnetic layer includes a three-dimensional magnetic material; the second magnetic layer comprises a two-dimensional ferromagnetic van der Waals material.
In the embodiment of the invention, the traditional three-dimensional magnetic metal Co and the two-dimensional ferromagnetic van der Waals material Fe3GeTe2 are combined, and the interaction between the two materials is utilized to achieve the aim of improving the Curie temperature of the Fe3GeTe2, so that the application of the ferromagnetic 3D/2D heterostructure in the field of spintronics at room temperature is possible, and a new physical paradigm is provided for the theory of a heterogeneous interface.
According to an embodiment of the present invention, the material of the first magnetic layer includes any one of Co, coFe, coP, fePt, coFeB. According to an embodiment of the present invention, the material of the first magnetic layer includes, but is not limited to Co, coFe, coP, fePt, coFeB.
According to an embodiment of the present invention, the material of the second magnetic layer includes any one of Fe 3GeTe2、Cr2Ge2Te6.
In the embodiment of the invention, the material of the first magnetic layer is a three-dimensional magnetic material with high Curie temperature, and the Curie temperature is higher than the room temperature and the perpendicular magnetic anisotropy is good through the material characteristics of the three-dimensional magnetic material, so that the material property of the second magnetic layer is influenced, and the Curie temperature of the two-dimensional ferromagnetic Van der Waals material is improved to be higher than the room temperature.
According to an embodiment of the present invention, the material of the nonmagnetic layer includes any one of a metal, a metal oxide, and an amorphous material.
According to an embodiment of the present invention, the metal includes any one of Ta, pt, ru, au, ag, cu; the metal oxide comprises any one of MgO and Al 2O3; the amorphous material includes NiP.
In the embodiment of the invention, the function of the nonmagnetic layer is to realize interlayer ferromagnetic coupling or antiferromagnetic coupling, so that the choice of the nonmagnetic layer material needs to be determined according to practical situations.
According to an embodiment of the present invention, the thickness of each of the first magnetic layer and the second magnetic layer is 0.5 to 5nm, for example: 0.5nm, 1nm, 2nm, 3nm, 4nm, 5nm.
In the embodiment of the invention, the first magnetic layer and the second magnetic layer both have perpendicular magnetic anisotropy, and the thinner the thickness of the magnetic layer is, the better the perpendicular magnetic anisotropy is. In order to achieve better interlayer exchange coupling, the thickness of the nonmagnetic layer is generally smaller than the thicknesses of the first magnetic layer and the second magnetic layer.
The embodiment of the invention also provides a method for preparing the multilayer magnetic thin film device, which comprises the following steps: providing a substrate; growing a first magnetic layer on the substrate; growing a nonmagnetic layer on the first magnetic layer; growing or transferring a stacked second magnetic layer on the nonmagnetic layer; interlayer exchange magnetic coupling is achieved between the first magnetic layer and the second magnetic layer by magnetic exchange interactions.
In the embodiment of the invention, the first magnetic layer, the nonmagnetic layer and the second magnetic layer are sequentially grown on the substrate by adopting a semiconductor process, and the process is simple. In the manufacturing process, the growth of the first magnetic layer and the second magnetic layer can be exchanged, namely, the second magnetic layer is grown first, the nonmagnetic layer is grown again, and the first magnetic layer is grown finally, so that the multilayer magnetic thin film device can be obtained.
According to an embodiment of the present invention, the method for growing the first magnetic layer and/or the second magnetic layer includes, but is not limited to, the following methods: physical vapor deposition, magnetron sputtering, molecular beam epitaxy, chemical vapor deposition, thermal evaporation, electron beam evaporation, pulsed laser deposition, atomic layer deposition.
The embodiment of the invention also provides a magnetic memory which comprises the multilayer magnetic thin film device.
The properties of the multilayer magnetic thin film device of the embodiment of the present invention were verified by the abnormal hall test as follows.
In the embodiment of the invention, three-dimensional magnetic metal Co is adopted as a first magnetic layer, two-dimensional ferromagnetic van der Waals material Fe 3GeTe2 is adopted as a second magnetic layer, metal Pt is adopted as a non-magnetic layer, the non-magnetic layer is prepared into a Ta/Pt/Co/Pt/Fe 3GeTe2 (PCP/FGT) multilayer film device, and FIG. 2 schematically shows a structure schematic diagram of the PCP/FGT multilayer film device for carrying out abnormal Hall test in the embodiment of the invention, and Si/SiO 2 layers, ta metal layers, pt metal layers, co metal layers, pt metal layers and Fe 3GeTe2 layers are sequentially arranged from bottom to top as shown in FIG. 2. In this embodiment, the metal layer is configured to be cross-shaped for convenience of abnormal hall test, but it should be noted that the typical configuration of the metal layer is not limited to the cross-shaped configuration in this embodiment by adopting the layered structure shown in fig. 1 of the present invention.
Abnormal hall testing was performed at 310K for PCP/FGT multilayer film devices and Ta/Pt/Co/Pt (PCP) multilayer film devices, respectively. Fig. 3 schematically illustrates a graph of the results of an anomalous hall test performed on a multi-layer magnetic thin film device in accordance with an embodiment of the invention, the test results are shown in fig. 3, wherein the typical rectangular R H hysteresis loop area of the PCP/FGT sample at 310K is greater than the hysteresis loop area of the PCP sample at 310K, and the hall resistance of the PCP/FGT sample is stabilized at 1.5 Ω, while the hall resistance of the PCP sample is only stabilized at 0.5 Ω, which clearly indicates that the PCP/FGT multi-layer thin film device has sufficient perpendicular magnetic anisotropy and has 100% out-of-plane remanence above room temperature.
The foregoing description of the embodiments has been provided for the purpose of illustrating the general principles of the invention, and is not meant to limit the invention thereto, but to limit the invention thereto, and any modifications, equivalents, improvements and equivalents thereof may be made without departing from the spirit and principles of the invention.
Claims (8)
1. A multilayer magnetic thin film device comprising the following structures, sequentially arranged from bottom to top: a substrate, a first magnetic layer, a nonmagnetic layer, a second magnetic layer;
The first magnetic layer has a higher curie temperature than the second magnetic layer;
The nonmagnetic layer is used for realizing interlayer exchange magnetic coupling between the first magnetic layer and the second magnetic layer;
wherein the first magnetic layer comprises a three-dimensional magnetic material; the second magnetic layer comprises a two-dimensional ferromagnetic van der Waals material;
The material of the first magnetic layer comprises any one of Co, coFe, coP, fePt, coFeB; the material of the second magnetic layer includes any one of Fe 3GeTe2、Cr2Ge2Te6.
2. The multilayer magnetic thin film device of claim 1, wherein the interlayer exchange magnetic coupling comprises any one of ferromagnetic coupling, antiferromagnetic coupling.
3. The multilayer magnetic thin film device of claim 1, wherein the material of the non-magnetic layer comprises any one of a metal, a metal oxide, an amorphous material.
4. The multilayer magnetic thin film device of claim 3, wherein the metal comprises any one of Ta, pt, ru, au, ag, cu; the metal oxide comprises any one of MgO and Al 2O3; the amorphous material includes NiP.
5. The multilayer magnetic thin film device of claim 1, wherein the thickness of the first magnetic layer and the second magnetic layer each comprises 0.5-5 nm.
6. A method of making the multilayer magnetic thin film device of any one of claims 1-5, comprising:
Providing a substrate;
Growing a first magnetic layer on the substrate;
Growing a nonmagnetic layer on the first magnetic layer;
Growing or transferring a stacked second magnetic layer on the nonmagnetic layer;
Interlayer exchange magnetic coupling is achieved between the first magnetic layer and the second magnetic layer through magnetic exchange interaction;
wherein the first magnetic layer comprises a three-dimensional magnetic material; the second magnetic layer comprises a two-dimensional ferromagnetic van der Waals material;
The material of the first magnetic layer comprises any one of Co, coFe, coP, fePt, coFeB; the material of the second magnetic layer includes any one of Fe 3GeTe2、Cr2Ge2Te6.
7. The method of claim 6, wherein the method of growing the first magnetic layer and/or the second magnetic layer comprises any one of:
Physical vapor deposition, magnetron sputtering, molecular beam epitaxy, chemical vapor deposition, thermal evaporation, electron beam evaporation, pulsed laser deposition, atomic layer deposition.
8. A magnetic memory comprising the multilayer magnetic thin film device of any one of claims 1 to 5.
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| CN202111040979.1A CN113764153B (en) | 2021-09-06 | 2021-09-06 | Multilayer magnetic thin film device, preparation method thereof and magnetic memory |
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| CN113764153B true CN113764153B (en) | 2024-07-23 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03230339A (en) * | 1990-02-05 | 1991-10-14 | Mitsubishi Electric Corp | Magneto-optical recording medium |
| CN102467914A (en) * | 2010-11-09 | 2012-05-23 | 日立环球储存科技荷兰有限公司 | Thermally-assisted recording patterned media magnetic recording disk driver |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5015901B2 (en) * | 2008-12-01 | 2012-09-05 | 昭和電工株式会社 | Thermally assisted magnetic recording medium and magnetic recording / reproducing apparatus |
| US8630060B2 (en) * | 2012-03-09 | 2014-01-14 | HGST Netherlands B.V. | Thermally enabled exchange coupled media for magnetic data recording |
| KR102310181B1 (en) * | 2019-10-14 | 2021-10-08 | 한국과학기술연구원 | Spin device including 2-dimentional magnetic material |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03230339A (en) * | 1990-02-05 | 1991-10-14 | Mitsubishi Electric Corp | Magneto-optical recording medium |
| CN102467914A (en) * | 2010-11-09 | 2012-05-23 | 日立环球储存科技荷兰有限公司 | Thermally-assisted recording patterned media magnetic recording disk driver |
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