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CN113745131B - Multilayer epitaxy process and linear platform equipment thereof - Google Patents

Multilayer epitaxy process and linear platform equipment thereof Download PDF

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Publication number
CN113745131B
CN113745131B CN202111011630.5A CN202111011630A CN113745131B CN 113745131 B CN113745131 B CN 113745131B CN 202111011630 A CN202111011630 A CN 202111011630A CN 113745131 B CN113745131 B CN 113745131B
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silicon carbide
wafer
reaction
hydrogen
reaction chambers
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CN113745131A (en
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三重野文健
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Gu Yingsu Technology Hefei Co ltd
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Gu Yingsu Technology Hefei Co ltd
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/025—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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Abstract

The invention provides a multilayer epitaxial process linear platform device, which comprises a robot vacuum lock capable of moving horizontally or vertically; a plurality of reaction chambers are arranged at two sides of the robot vacuum lock; the reaction chamber is provided with a heater, and the robot vacuum lock can put in or take out wafers from the reaction chamber. The invention improves the throughput, is suitable for carrying out the process steps of doping, depositing and the like on a plurality of layers, and can better control the process quality.

Description

Multilayer epitaxy process and linear platform equipment thereof
Technical Field
The invention relates to the field of semiconductor processes and equipment, in particular to a multilayer epitaxial process and linear platform equipment thereof.
Background
The reaction chambers for silicon and silicon carbide are conceptually identical, differing in growth temperature and additive gas as a carbon source.
From the history of the epitaxial process of silicon, the equipment mainly comprises three types: early reaction devices using radio frequency heating, reaction devices using infrared lamps, and single blade type high speed rotation reaction devices using resistance heating, which have appeared in recent years. Whichever reaction apparatus, its basic structure includes: a quartz cavity with a gas inlet and a gas outlet, a wafer tray and a heating device.
One specific conventional silicon epitaxial reactor is provided with a silicon carbide-coated graphite heater, a silicon carbide-coated graphite gas diffuser, and vertical gas diffusion passages, as disclosed in japanese patent laid-open No. 63-222427, using the concept of single wafer processing. Referring to fig. 1, fig. 1 is a schematic diagram of sho 63-222427. In the figure, the bell jar 6 forms a reaction cavity, the supporting tray 1a is used for placing a heated object 7, namely a wafer, and meanwhile, the supporting tray 1a is provided with a conductive part 2 for heating the wafer, and the conductive part 2 is sequentially connected with the electrode 3, the control circuit 4 and the heating power supply 5 to form a heating circuit. The reaction apparatus of fig. 1 can only perform very slow autodoping due to the concept of monolithic processing.
Similarly, the silicon carbide epitaxial reaction devices on the market at present are not various in types and are not ideal in performance parameters. The problem is mainly characterized by low throughput, and the processing efficiency of the silicon carbide epitaxial reaction device on the market at present is generally in the range of 1500-2500 wafers with a W/M of 10 microns in epitaxial growth thickness.
The automatic doping control is poor, and multiple doping control on a thinner epitaxial layer is particularly difficult. There are approximately 7000 defects per cubic centimeter in the silicon carbide substrate. These defects are mainly basal plane dislocations Basal Plane Dislocation (BPD), which are typically generated when silicon carbide ingots are formed using the sublimation growth method.
After the growth of the crystal, the crystal ingot is cut into a silicon carbide substrate, and then the surface of the silicon carbide substrate is polished by a grinding process. During the slicing process and the grinding process, small scratches are generated on the surface. Chemical Mechanical Polishing (CMP) processes also produce small scratches as the last polishing process.
After the epitaxy process, the surface of the epitaxial layer also has about 6000 defects per cubic centimeter, as 7000 defects per cubic centimeter already exist in the silicon carbide substrate.
Therefore, it is an urgent problem to provide a high-throughput low-defect multi-layer epitaxy process and a linear platform device thereof.
Disclosure of Invention
The present invention has been made in view of the above problems, and an object of the present invention is to provide a multi-layered epitaxial linear stage apparatus for high throughput capable of reducing defects in epitaxial processes.
To achieve this object, the present invention provides a multi-layered epitaxial process linear stage apparatus with a robotic vacuum lock that can be moved horizontally or vertically; the reaction chambers are arranged at two sides of the moving direction of the vacuum lock of the robot; the reaction chamber is provided with a heater, and the robot vacuum lock can put in or take out wafers from the reaction chamber.
The reaction cavity is provided with a stainless steel cavity shell of a water cooling device, the top of the shell is provided with a source gas inlet, the source gas is introduced into a wafer right below through a gas diffuser, and the inner wall of the cavity is formed by graphite coated with silicon carbide; a resistance heater formed by graphite coated by silicon carbide is arranged below the gas diffuser, and is discharged from the gas outlet hole at the bottom of the reaction cavity through a vertical gas flow channel formed at the periphery of the heater.
The heater is provided with a concave part for placing a wafer, the concave part is provided with a plurality of holes, and the ejector pins can move up and down through the holes so as to hold up or lower the wafer. The shape of the heater is cylindrical, the inside of the heater is provided with a cavity, the top of the heater is thinner, the resistance is larger, the heating efficiency is high, the outer wall of the lower part is thicker, the resistance is smaller, and the heating can be restrained.
The number of reaction chambers may be added horizontally or vertically.
The robot vacuum lock is internally provided with a mechanical arm which is provided with a shaft, the shaft is controlled by a vertical controller and a horizontal controller, and a wafer can be placed into any one of the reaction chambers or taken out from any one of the reaction chambers. The vertical controller controls the shaft to move up and down so as to align with a wafer inlet and outlet passage of any one reaction cavity; the horizontal controller can control the shaft to rotate, so that the mechanical arm is aligned to the wafer inlet and outlet passage; the horizontal controller can also drive the shaft to horizontally displace, so that the mechanical arm can enter and exit the reaction cavity to put in or take out the wafer.
Preferably, the forefront chamber arranged on each side is a pretreatment chamber, and the silicon carbide wafer is pretreated under the condition of reducing pressure of chlorine trifluoride to remove defects, wherein the treatment temperature is 1000-1700 ℃. Arranged at the second position on each side is a resurfacing chamber depressurized to less than and near 80 torr at 1700 to 2200 degrees celsius, hydrogen or helium or argon or nitrogen being introduced from the chamber top and chamber sidewalls.
It is another object of the present invention to provide a multi-layer epitaxy process with good autodoping control for high throughput. In order to achieve the purpose, the invention provides a multi-layer epitaxial process, multi-step silicon carbide epitaxial growth is carried out in a plurality of reaction chambers, the reaction chambers are sequentially arranged, the first reaction chamber is pretreated, and the other reaction chambers are respectively subjected to epitaxial growth once.
Wherein the pretreated atmosphere is hydrogen or hydrogen chloride. The pretreatment is that the silicon carbide wafer is pretreated under the condition of reducing pressure of chlorine trifluoride to remove defects, and the treatment temperature is 1000-1700 ℃.
Further, the reaction chambers are arranged at two sides of the wafer cassette vacuum lock in two rows. In the multi-step epitaxial growth process in the reaction chambers, the idle reaction chambers adopt hydrogen chloride and hydrogen, or one or more of chlorine trifluoride and hydrogen, argon and helium, or one or more of hydrogen chloride and chlorine trifluoride and hydrogen, argon and helium, and the reaction chambers are cleaned by a dry method according to one of the above formulas. The epitaxial process is one of silicon carbide or gallium nitride or silicon germanium. The pretreatment atmosphere is hydrogen or hydrogen chloride. After pretreatment the wafer was processed in a subsequent reaction chamber for 18 minutes, wherein epitaxial growth was carried out for 15 minutes. In each reaction cavity for epitaxy, the source gas consists of silane, propane, hydrogen and nitrogen; the reaction temperature is 1350-1650 ℃ and the pressure is 20-120 torr; the silane gas flow rate is 300-700sccm (milliliter per minute under standard conditions), the propane gas flow rate is 100-500sccm (milliliter per minute under standard conditions), the hydrogen gas flow rate is 50-250slm (liter per minute under standard conditions), and the nitrogen gas flow rate is 10-50sccm (milliliter per minute under standard conditions).
The silicon carbide may be 4H crystal form silicon carbide, the 4H crystal form silicon carbide may be grown from silane or propane, the carrier gas is hydrogen, the silicon source gas may be disilane or trisilane, and the carbon source gas may be ethane or propane. Or the silicon carbide may be 3C crystal form silicon carbide, the silicon source gas is silane, and the carbon source gas is propane. The 3C crystal form silicon carbide is grown on a silicon substrate.
Further, the method can also comprise one or more of a chemical vapor deposition process, an annealing process or an oxidation or nitridation process, and the source gas adopted comprises one or more of silane, dichlorosilane, hexachlorodisilane, nitrous oxide, nitric oxide, ammonia, oxygen, argon and helium. The chemical vapor deposition process is an atomic layer deposition technique. A multi-step doping process may also be included.
The silicon carbide epitaxial reaction device has the beneficial effects of solving the problem that the performance parameters of the existing silicon carbide epitaxial reaction device in the current market are not ideal. The throughput is high, the invention adopts a double-row multiple epitaxial layer linear reaction cavity, the growth rate is 1.5 microns per minute, and the throughput can reach 3600 sheets per month. In addition, the invention adopts pretreatment and surface finishing processes, thereby effectively reducing the internal defects of the wafer and improving the yield. The invention adopts multilayer epitaxial growth, is suitable for carrying out the process steps of doping, depositing and the like on a plurality of layers, and can better control the process quality.
In order to make the above objects, features and advantages of the present invention more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of the prior art;
FIG. 2 is a schematic diagram of a linear epitaxy apparatus of the present invention;
FIG. 3 is a schematic view of a longitudinal cross-sectional structure of a heater according to the present invention;
FIG. 4 is a schematic view showing the internal structure of the linear epitaxy apparatus of the present invention;
fig. 5 is a schematic view of another embodiment of the linear epitaxy apparatus of the present invention;
FIG. 6 is a schematic diagram of the process steps of one embodiment of the present invention;
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to be within the scope of the present invention.
The present invention is described in further detail below to enable those skilled in the art to practice the invention by reference to the specification.
Referring first to fig. 2, fig. 2 is a schematic structural diagram of a linear epitaxy apparatus of the present invention. As shown in fig. 2, the linear epitaxial device apparatus has a robotic vacuum lock 12, which robotic vacuum lock 12 is movable in the X-direction (input cassette line 13 to output cassette line 14) and Z-direction (i.e., vertical) in the figure. The two sides of the robot vacuum lock 12 are provided with a plurality of reaction chambers R which can be overlapped in the X direction and the Z direction.
The robot vacuum lock 12 removes wafers from the wafer cassette 15 and places the wafers into the reaction chamber R. The reaction chambers R are arranged along the X direction on both sides of the robot vacuum lock 12, and the robot vacuum lock 12 takes out wafers from the reaction chambers R and places them into another reaction chamber R until the end of the wafer is empty in the wafer cassette. The reaction chamber R is provided with a graphite heater coated with silicon carbide.
Several reaction chambers R are linearly arranged at both sides of the robot vacuum lock 12. The robotic vacuum lock 12 may extend horizontally or alternatively vertically. For example, reaction chambers R1 and R3 are provided on one side of the robot vacuum lock 12, and reaction chambers R2 and R4 are provided on the other side of the robot vacuum lock 12. At the end of the robot vacuum lock 12, another robot vacuum lock 12 having 2 reaction chambers (i.e., reaction chambers Rn, rn+1) may be added, whereby the number of robot vacuum locks 12 and corresponding reaction chambers R may be increased according to the optimization requirement of the throughput.
Referring to fig. 3, fig. 3 is a schematic longitudinal sectional view of a heater according to the present invention. As shown in fig. 3, one reaction chamber R has one resistance heater 31. The resistive heater 31 is cylindrical in shape and is composed of graphite coated with silicon carbide, and has a cavity 32 therein for connection to a power source. The top 34 of the resistance heater 31 is thin, has a large resistance, is high in heat generation efficiency, has a thick lower outer wall 35, has a small resistance, and can suppress heat generation. Therefore, the cross-sectional area of the bottom of the resistance heater 31 is maximum, and gradually becomes smaller from bottom to top. By this structure, heat generation is concentrated at the top 34 that is in contact with the wafer. The top 34 is provided with a recess 33. The recess 33 is used for placing a wafer. This recess 33 is provided with three holes 36. A spike 37 disposed in the cavity 32 may move up and down through the three holes 36 to lift or lower the wafer.
Referring to fig. 4, fig. 4 is a schematic diagram illustrating an internal structure of the linear epitaxy apparatus of the present invention. As shown in fig. 4, a source gas inlet 42 is provided at the top of a stainless steel chamber housing 41 having a water cooling device, and a reverse funnel-shaped gas diffuser 43 introduces the source gas into a wafer 44 directly below. The chamber inner wall 45 is composed of graphite coated with silicon carbide. Below the gas diffuser 43 is a resistive heater 31 of silicon carbide coated graphite. The resistive heater 31 has a wafer 44 placed on top. The gases hydrogen, helium and argon are discharged from the gas outlet holes 46 at the bottom of the reaction chamber R through vertical gas flow channels formed around the resistive heater 31.
Referring to fig. 5, fig. 5 is a schematic view of another embodiment of the linear epitaxy apparatus of the present invention. As shown in fig. 5, the reaction chambers R are arranged in pairs on both sides of the robot vacuum lock 12, and the robot vacuum lock 12 can transfer the wafer 44 into or out of the reaction chambers R. The robotic vacuum lock 12 may be moved horizontally or vertically. The number of reaction chambers R may be added horizontally or vertically. The robot vacuum lock 12 has a robot arm 51 therein, the robot arm 51 has a shaft 52, and the shaft 52 is controlled by a vertical controller 53 and a horizontal controller 54 outside the robot vacuum lock 12, so that the wafer 44 can be placed in any one of the reaction chambers R, and the wafer 44 can be taken out from any one of the reaction chambers R. The vertical controller 53 controls the up and down movement of the shaft 52 to align the wafer access port 55 of any one of the reaction chambers R. The horizontal controller 54 may control the rotation of the shaft 52 such that the robot arm 51 is aligned with the wafer access port 55. The horizontal controller 54 may also drive the shaft 52 to move horizontally, so that the robot arm 51 may move in and out of the reaction chamber R to insert or remove the wafer 44.
And carrying out multi-step epitaxial growth in the reaction chambers R, wherein the thickness of each epitaxial growth is less than 30 microns. In the whole process, the idle reaction chamber adopts one or more of hydrogen chloride and hydrogen, or chlorine trifluoride and hydrogen, argon and helium, or one or more of hydrogen chloride and chlorine trifluoride and hydrogen, argon and helium, and the reaction chamber is cleaned by a dry method according to one of the above formulas. Such an epitaxial processing apparatus may handle epitaxial processes of gallium nitride, silicon or silicon germanium other than silicon carbide.
Referring to fig. 6, fig. 6 is a schematic process flow diagram of an embodiment of the invention. The example of fig. 6 is a 135 micron epitaxial layer linear epitaxy process tool with dual pretreatment reaction chambers with a growth rate of 1.5 microns per minute. The productivity can reach 3600 sheets per month. The pretreatment chamber has a silicon carbide coated graphite heater. Chlorine trifluoride is introduced with or without hydrogen, nitrogen or argon. The silicon carbide wafer is pre-treated under reduced pressure of chlorine trifluoride to remove defects such as basal plane dislocation BPD (Basal Plane Dislocation) at a processing temperature of 1000 to 1700 degrees celsius. The fluoride ions are introduced through a remote plasma chamber. And oxygen is supplied, the source gases are perfluorocarbon and oxygen. The silicon carbide wafer is pretreated under reduced pressure at a pressure of less than approximately 3 torr and a treatment temperature of 500 to 1000 degrees celsius.
The silicon carbide anneal in the resurfacing chamber is performed at about 1700 to 2100 degrees celsius. Hydrogen or helium or argon or nitrogen is introduced from the chamber top and chamber side walls at reduced pressure to near but less than 50 torr. The surface conditioning chamber and the pretreatment chamber are connected, such as by a platen system and an epitaxial growth chamber.
In this example, there are 14 reaction chambers, which are divided into two rows of 7 reaction chambers. The wafer is loaded into a first pair of reaction chambers, namely reaction chambers 1 and 2, for pretreatment, and the atmosphere is hydrogen or hydrogen chloride. The wafers were then loaded into the reaction chambers 3, 4, respectively, for 18 minutes, wherein epitaxial growth was performed for 15 minutes. The wafers are then sequentially loaded into reaction chambers 5, 7, 9, 11, 13 and 6, 8, 10, 12, 14, respectively, for epitaxial processing. And finally, carrying out the wafer to finish the epitaxial treatment.
In the reaction chambers 3-14, the source gases are composed of silane, propane, hydrogen and nitrogen. Wherein the reaction temperature is 1350-1650 ℃ and the pressure is 20-120 torr. The silane gas flow rate is 300-700sccm (milliliter per minute under standard conditions), the propane gas flow rate is 100-500sccm (milliliter per minute under standard conditions), the hydrogen gas flow rate is 50-250slm (liter per minute under standard conditions), and the nitrogen gas flow rate is 10-50sccm (milliliter per minute under standard conditions).
In various embodiments of the present invention, a chemical vapor deposition process or an annealing process or an oxidation or nitridation process. Using common source gases, e.g. silane, dichlorosilane (SiH) 2 Cl 2 ) Hexachlorodisilane, nitrous oxide, nitric oxide, ammonia, oxygen, argon, helium. Chemical vapor deposition may use Atomic Layer Deposition (ALD) techniques. A multi-step doping process may also be included. The silicon carbide may be 4H crystal form silicon carbide, the 4H crystal form silicon carbide may be grown from silane or propane, the carrier gas is hydrogen, the silicon source gas may be disilane or trisilane, and the carbon source gas may be ethane or propane. Or the silicon carbide may be 3C crystal form silicon carbide, the silicon source gas is silane, and the carbon source gas is propane. The 3C crystal form silicon carbide is grown on a silicon substrate.
Although embodiments of the invention have been disclosed above, they are not limited to the use listed in the specification and embodiments. It can be applied to various fields suitable for the present invention. Additional modifications will readily occur to those skilled in the art. Therefore, the invention is not to be limited to the specific details and illustrations shown and described herein, without departing from the general concepts defined in the claims and their equivalents.

Claims (16)

1. The multilayer epitaxy process linear platform equipment is characterized by comprising a robot vacuum lock which moves horizontally or vertically; the reaction chambers are arranged at two sides of the moving direction of the vacuum lock of the robot; the reaction cavity is provided with a heater, and the robot vacuum lock can put in or take out wafers from the reaction cavity; one chamber arranged at the forefront of each side is a pretreatment chamber, and the silicon carbide wafer is pretreated under the condition of reducing pressure of chlorine trifluoride to remove defects, wherein the treatment temperature is 1000-1700 ℃; arrayed in the second position on each side is a resurfacing chamber depressurized to less than and near 80 torr at 1700 to 2200 degrees celsius, hydrogen or helium or argon or nitrogen being introduced from the chamber top and chamber sidewalls; the number of the reaction chambers on each side is added horizontally or vertically; the heater is provided with a concave part for placing a wafer, the concave part is provided with a plurality of holes, and the thimble moves up and down through the holes so as to hold up or lower the wafer; the robot vacuum lock can put in or take out wafers from the reaction cavity; performing multi-step silicon carbide epitaxial growth in a plurality of reaction chambers, wherein the reaction chambers are sequentially arranged, two rows of reaction chambers are arranged at two sides of a wafer box vacuum lock, the first reaction chamber in each row is subjected to pretreatment, the second reaction chamber is subjected to surface finishing treatment, and the other reaction chambers are subjected to epitaxial growth for one time; in the multi-step epitaxial growth process, the idle reaction chamber adopts one or more of hydrogen chloride and hydrogen, or chlorine trifluoride and hydrogen, argon and helium, or one or more of hydrogen chloride and chlorine trifluoride and hydrogen, argon and helium, and the reaction chamber is cleaned by a dry method according to one of the above formulas; the multi-step silicon carbide epitaxial growth further includes a multi-step doping process.
2. The multilayer epitaxy process linear platform device according to claim 1, wherein the reaction chamber is provided with a stainless steel chamber shell of a water cooling device, the top of the shell is provided with a source gas inlet, the source gas is introduced into a wafer right below through a gas diffuser, and the inner wall of the chamber is composed of graphite coated with silicon carbide; a resistance heater formed by graphite coated by silicon carbide is arranged below the gas diffuser, and is discharged from the gas outlet hole at the bottom of the reaction cavity through a vertical gas flow channel formed at the periphery of the heater.
3. The linear stage apparatus of claim 1, wherein the heater has a cylindrical shape with a cavity therein, a thin top, a high resistance, a high heat generation efficiency, a thick lower outer wall, and a low resistance, and is configured to suppress heat generation, such that heat generation is concentrated at the top in contact with the wafer.
4. The multi-layered epitaxial process linear stage apparatus of claim 1, wherein the robotic vacuum lock has a robotic arm therein, the robotic arm having an axis, the axis being controlled by a vertical controller and a horizontal controller to place a wafer into or remove a wafer from any one of the reaction chambers.
5. The multi-layered epitaxial process linear stage apparatus of claim 4, wherein the vertical controller controls the up and down motion of the shaft to align the wafer access of any one of the reaction chambers; the horizontal controller controls the shaft to rotate, so that the mechanical arm is aligned to the wafer inlet and outlet passage; the horizontal controller also drives the shaft to horizontally displace, so that the mechanical arm enters and exits the reaction cavity, and the wafer is put in or taken out.
6. The multilayer epitaxial process is characterized in that multi-step silicon carbide epitaxial growth is carried out in a plurality of reaction chambers, the reaction chambers are sequentially arranged, the first reaction chamber is subjected to pretreatment, the second reaction chamber is subjected to surface finishing treatment, and the other reaction chambers are respectively subjected to epitaxial growth once; the pretreatment is that the silicon carbide wafer is pretreated under the condition of reducing pressure of chlorine trifluoride to remove defects, and the treatment temperature is 1000-1700 ℃; the pretreated atmosphere is hydrogen or hydrogen chloride; in the multi-step epitaxial growth process in the reaction chambers, the idle reaction chambers adopt hydrogen chloride and hydrogen, or one or more of chlorine trifluoride and hydrogen, argon and helium, or one or more of hydrogen chloride and chlorine trifluoride and one or more of hydrogen, argon and helium, and the reaction chambers are cleaned by a dry method according to one of the above formulas; also included are multi-step doping processes.
7. The multilayer epitaxy process of claim 6, wherein said reaction chambers are arranged in two rows on either side of a wafer cassette vacuum lock.
8. The multilayer epitaxial process of claim 6 wherein the epitaxial process is one of silicon carbide or gallium nitride or silicon germanium.
9. The multilayer epitaxial process of claim 6 wherein the wafer is processed in a subsequent reaction chamber for 18 minutes after the pretreatment, wherein epitaxial growth occurs for 15 minutes.
10. The multilayer epitaxy process of claim 6, wherein in each reaction chamber in which epitaxy is performed, the source gas is composed of silane, propane, hydrogen, and nitrogen; the reaction temperature is 1350-1650 ℃ and the pressure is 20-120 torr; the flow rate of silane gas is 300-700sccm, the flow rate of propane gas is 100-500sccm, the flow rate of hydrogen gas is 50-250slm, and the flow rate of nitrogen gas is 10-50sccm.
11. The multilayer epitaxial process of claim 6 wherein the silicon carbide is
4H-form silicon carbide, the 4H-form silicon carbide is grown from silane or propane, and the carrier gas is hydrogen.
12. The multilayer epitaxial process of claim 6 wherein the silicon carbide is
Silicon carbide in the 4H crystal form, the silicon source gas is disilane or trisilane, and the carbon source gas is ethane or propane.
13. The multilayer epitaxial process of claim 6 wherein the silicon carbide is 3C crystal form silicon carbide, the silicon source gas is silane, and the carbon source gas is propane.
14. The multilayer epitaxial process of claim 13, wherein the 3C silicon carbide is grown on a silicon substrate.
15. The multilayer epitaxial process of claim 6, further comprising one or more of a chemical vapor deposition process or an annealing process or an oxidation or nitridation process step, wherein the source gas used comprises one or more of silane, dichlorosilane, hexachlorodisilane, nitrous oxide, nitric oxide, ammonia, oxygen, argon, helium.
16. The multilayer epitaxial process of claim 15, wherein the chemical vapor deposition process is an atomic layer deposition technique.
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