CN113736142B - Semiconductor packaging material or substrate material - Google Patents
Semiconductor packaging material or substrate material Download PDFInfo
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- CN113736142B CN113736142B CN202111021555.0A CN202111021555A CN113736142B CN 113736142 B CN113736142 B CN 113736142B CN 202111021555 A CN202111021555 A CN 202111021555A CN 113736142 B CN113736142 B CN 113736142B
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
- C08K7/16—Solid spheres
- C08K7/18—Solid spheres inorganic
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
- C08K9/06—Ingredients treated with organic substances with silicon-containing compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention provides a preparation method of a semiconductor packaging material or a substrate material, which comprises the steps of providing spherical or amorphous polysiloxane, heating the polysiloxane until the organic components in the polysiloxane particles are substantially completely oxidized in an oxidizing gas atmosphere to a temperature between 600 ℃ and 800 ℃ for heat treatment so as to enable the surface of the powder to be a compact silicon oxide layer, and simultaneously enabling the organic components in the heat treatment powder to be thermally decomposed into carbon elements; calcining to obtain black spherical or amorphous silica filler, wherein the calcining temperature is more than 800 ℃ and less than 1100 ℃ so as to condense residual silicon hydroxyl; the black spherical or amorphous silicon oxide filler is tightly filled and graded in the resin to form the semiconductor packaging material or the substrate material. The black spherical or amorphous silicon oxide can be directly made into grey or black semiconductor packaging material or substrate material, thereby fundamentally solving the problems of conductivity and difficult laser processing of silicon dioxide caused by introducing acetylene black for dyeing.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a preparation method of a semiconductor packaging material or a substrate material, the semiconductor packaging material or the substrate material obtained by the preparation method and application thereof.
Background
In the packaging process of the back-end process of the semiconductor, packaging materials such as plastic packaging materials, surface mount adhesives, bottom filling materials, chip carrier plates and the like are needed. In addition, when passive elements, semiconductor elements, electroacoustic devices, display devices, optical devices, radio frequency devices, and the like are assembled into devices, high-density interconnection boards (high density inerconnect, HDI), high-frequency high-speed boards, mother boards, and the like are also used. These packaging materials and circuit boards are generally mainly composed of an organic polymer such as epoxy resin and a filler, wherein the filler is mainly angular or spherical silica, and the main function of the filler is to reduce the thermal expansion coefficient of the organic polymer. In order to reduce the viscosity of the filler and improve the filling rate, the existing filler adopts spherical silicon dioxide for compact filling grading.
For the above semiconductor encapsulation material or substrate material, it is generally necessary to add a pigment to dye it in gray or black. The reasons for the need to dye the semiconductor package material or substrate material in gray or black are 1) to facilitate laser printing on the component, 2) to reduce photo-aging, improve durability, 3) to facilitate laser drilling, 4) to reduce light reflection, 5) to reduce lot-to-lot color variation, etc. As the general pigment contains conductive ions, only acetylene black can be suitable as the pigment. However, acetylene black is an electron conductor, and therefore it is necessary to highly disperse acetylene black to a size smaller than the metal interval of the semiconductor element to prevent short-circuiting. However, as the packing density of semiconductor elements becomes higher, the risk of short circuit caused by acetylene black becomes larger.
Disclosure of Invention
In order to solve the problems of easy short circuit caused by acetylene black dyeing and difficult laser processing of silicon dioxide in the prior art, the invention aims to provide a preparation method of a semiconductor packaging material or substrate material, the semiconductor packaging material or substrate material obtained by the preparation method and application thereof.
The invention provides a preparation method of a semiconductor packaging material or a substrate material, which comprises the following steps: s1, providing a spherical or amorphous polysiloxane comprising T units, wherein T units = R 1 SiO 3 -，R 1 A hydrocarbyl group of carbon atoms 1 to 16 independently selectable or a hydrogen atom; s2, in an oxidizing gas atmosphere, heating the polysiloxane particles to 600-800 ℃ until the organic components in the polysiloxane particles are substantially completely oxidized, so that a compact silicon oxide layer is formed on the surface of the powder, and simultaneously, thermally decomposing the organic components in the heat-treated powder into carbon elements; s3, calcining to obtain black spherical or amorphous silicon oxide filler, wherein the calcining temperature is more than 800 ℃ and less than 1100 ℃ so as to condense the residual silicon hydroxyl; and S4, tightly filling and grading the black spherical or amorphous silicon oxide filler in resin to form a semiconductor packaging material or a substrate material.
The polysiloxane of the present invention can form a dense silicon oxide layer in an atmosphere of 600-800 degrees in which oxygen is contained, thereby preventing oxygen from diffusing into the interior of polysiloxane particles. Thus, spherical silica particles containing an internal carbon element can be obtained.
Preferably, in step S2, the temperature is raised to between 600 and 800 degrees before the surface silica forms a dense layer and before substantially all of the organic components in the polysiloxane particles are oxidized.
Preferably, in step S2, the temperature is raised from room temperature to a temperature rise rate of between 600 ℃ and 800 ℃ at a rate of between 1 ℃ and 10 ℃ per minute. In particular, the rate of temperature increase may control the content of carbon element of the black spherical or amorphous silica filler obtained in step S3. Specifically, the faster the rate of temperature rise in step S2, the lower the whiteness of the black spherical or amorphous silica filler obtained in step S3.
Preferably, the whiteness of the black spherical or amorphous silica filler obtained in step S3 is <80%. In particular, the content of carbon element of the black spherical or amorphous silica filler obtained in step S3 may be characterized by whiteness of the powder, the higher the content of carbon element, the lower the whiteness. Specifically, the carbon content of 60-80% of the whiteness is about 0.06% -0.03%, and the carbon content is about more than 1% when the whiteness is less than 20%.
Preferably, in step S2, the oxidizing gas atmosphere is air.
Preferably, in step S2, the heat treatment temperature is between 650 degrees and 800 degrees.
Preferably, in step S3, the calcination gas atmosphere is a non-oxidizing gas atmosphere or an oxidizing gas atmosphere. In a preferred embodiment, the calcination is carried out in air or nitrogen. In a preferred embodiment, the calcination temperature is between 850 degrees and 1100 degrees.
Preferably, the polysiloxane further comprises Q units, D units and/or M units, wherein Q units = SiO 4 -, D unit=r 2 R 3 SiO 2 -, M unit=r 4 R 5 R 6 SiO-，R 2 ，R 3 ，R 4 ，R 5 ，R 6 Hydrocarbyl groups of 1 to 18 carbon atoms each independently of the others.
Preferably, the T unit raw material of the polysiloxane is a hydrocarbyl trialkoxysilane or a hydrocarbyl trichlorosilane, the Q unit raw material is at least one selected from the group consisting of tetraalkoxysilane, silicon tetrachloride and silicon dioxide, the D unit raw material is at least one selected from the group consisting of dialkyldialkoxysilane and dialkyldichlorosilane, and the M unit raw material is at least one selected from the group consisting of trialkylalkoxysilane, trialkylchlorosilane and hexahydrocarbyl disilazane.
Preferably, in step S4, coarse particles of 1 micron or more, 3 microns or more, 5 microns or more, 10 microns or more, 20 microns or more, 45 microns or more, 55 microns or more, or 75 microns or more in the black spherical or amorphous silica filler are removed using dry or wet sieving or inertial classification.
Preferably, in step S4, the black spherical or amorphous silica filler is tightly packed and graded in a resin as a main powder, a middle powder and/or a fine powder, respectively, to form a semiconductor encapsulation material or a substrate material. The "main powder" referred to herein refers to the powder of the large particle segments of the total filler filled in the resin, "intermediate powder" refers to the powder of the medium particle segments of the total filler filled in the resin, and "fine powder" refers to the powder of the small particle segments of the total filler filled in the resin. The terms "large particle segment", "medium particle segment" and "small particle segment" are used herein in a relative sense, and those skilled in the art will be familiar with how to select the particle size ranges of the individual segments specifically, and will not be described in detail herein. The respective volume percentages of the "main powder", "intermediate powder" and "fines" comprised by the total filler referred to herein are likewise well known to those skilled in the art. In a preferred embodiment, the primary powder comprises 70% by volume of the total filler, the secondary powder comprises 20% by volume of the total filler, and the fine powder comprises 10% by volume of the total filler. In the preferred grading process, the resin is first filled with "main powder", then with "intermediate powder", and finally with "fines". However, the grading process may also be completed by filling only the "middle powder" after filling the "main powder". Of course, the grading process may also be completed by filling only the "fine powder" after filling the "main powder".
Preferably, in step S4, the black spherical or amorphous silica filler is tightly packed and graded in a resin to form a semiconductor encapsulation material or a substrate material after being treated with a surface treatment agent. The reason why the surface treating agent is added is to improve the affinity of the interface between the black spherical or amorphous silica filler and the organic polymer resin. Wherein the treatment with the surface treating agent can be performed by a dry method or a wet method. Obviously, the surface treatment agent may be a silane coupling agent, a disilazane, a higher fatty acid, a surfactant, or the like. Preferably, the silane coupling agent is selected from silane coupling agents having a radical polymerization reaction, such as vinyl silane coupling agents and the like; a silane coupling agent that reacts with the epoxy resin, such as an epoxy silane coupling agent, an aminosilane coupling agent, etc.; and hydrocarbon silane coupling agents having high affinity for hydrophobic resins, such as dimethyldimethoxysilane, diphenyldimethoxysilane, phenylsilane coupling agents, long-chain alkylsilane coupling agents, and the like.
The invention also provides a semiconductor packaging material or a substrate material obtained by the preparation method.
The invention also provides an application of the semiconductor packaging material or the substrate material. Preferably, the semiconductor packaging material or substrate material can be used for plastic packaging material, surface mount adhesive, bottom filling material, chip carrier plate, circuit board or intermediate semi-finished product thereof. The plastic package material is a DIP package type plastic package material, an SMT package type plastic package material, MUF, FO-WLP and FCBGA plastic package material. Preferably, the circuit board is an HDI, high frequency high speed board, or motherboard.
According to the preparation method, the carbon element is contained in the inner part through the heat treatment of the step S2, the oxidation of the inner carbon element can be prevented by the outer surface compact layer under the high-temperature calcination of the step S3, the silicon hydroxyl is condensed by the high-temperature calcination of the step S3, the silicon hydroxyl content is reduced to reduce the dielectric constant and dielectric loss, the carbon element is contained in the black spherical or amorphous silicon oxide filler, and the black spherical or amorphous silicon oxide can be directly prepared into a gray or black semiconductor packaging material or a substrate material, so that the conductive problem caused by the introduction of acetylene black dyeing and the difficult laser processing problem of silicon dioxide are fundamentally solved.
Detailed Description
Preferred embodiments of the present invention are described in detail below.
The detection method involved in the following embodiment includes:
the average particle size is measured by a laser particle size distribution instrument LA-700 of HORIBA;
specific surface area was determined with FlowSorbIII2305 from SHIMADZU;
true specific gravity was determined with the belycno of microtracbl;
uranium and thorium content are measured by 7700X-type ICP-MS of Agilent, and the sample preparation method is that after 800 ℃ cauterization, hydrofluoric acid is used for full dissolution sample preparation;
the carbon content is measured by a CS-8810C carbon-sulfur analyzer of Sichuan Saensi;
whiteness is measured by a whiteness meter;
herein, "degrees" refers to "degrees celsius", i.e., degrees celsius;
herein, the average particle diameter refers to the volume average diameter of the particles.
Example 1
Placing deionized water with a certain weight part into a reaction kettle with a stirrer at room temperature, starting stirring, and adding methyltrimethoxysilane with a weight part of 80 and a small amount of acetic acid to adjust the pH to about 5. After methyltrimethoxysilane was dissolved, 25 parts by weight of 5% aqueous ammonia was added thereto and stirring was stopped after 10 seconds. Standing for 1 hr, filtering, and drying to obtain spherical polysiloxane. And (3) placing the polysiloxane powder into a muffle furnace for heat treatment and calcination. The analysis results of the samples are shown in Table 1 below.
TABLE 1
| Deionized water weight part | Average particle size (micron) | Onset temperature (. Degree. C.) | Heat treatment temperature (DEG C)/heating rate (DEG C/min) | Heat treatment atmosphere | Calcination temperature (DEG C)/time (hours) | Whiteness (%) | |
| Example 1 | 1500 | 0.8 | Room temperature | 650/1 | Air-conditioner | 850/20 | 78 |
| Example 2 | 1100 | 1.2 | Room temperature | 700/3 | Air-conditioner | 950/12 | 60 |
| Example 3 | 800 | 3.0 | Room temperature | 800/5 | Air-conditioner | 1000/6 | 25 |
| Example 4 | 600 | 4.5 | Room temperature | 800/10 | Air-conditioner | 1100/4 | 18 |
。
Example 2
At room temperature, 1100 parts by weight of deionized water was placed in a reaction vessel with a stirrer, and 80 parts by weight of propyltrimethoxysilane and a small amount of acetic acid were added with stirring to adjust the pH to about 5. After the propyltrimethoxysilane was dissolved, 25 parts by weight of 5% aqueous ammonia was added thereto and the mixture was stirred for 10 seconds, followed by stopping the stirring. Standing for 1 hr, filtering, and drying to obtain spherical polysiloxane. And (3) placing the polysiloxane powder into a muffle furnace for heat treatment and calcination. The analysis results of the samples are shown in Table 2 below.
TABLE 2
| Average particle size (micron) | Onset temperature (. Degree. C.) | Heat treatment temperature (DEG C)/heating rate (DEG C)Dividing/separating | Heat treatment atmosphere | Calcination temperature (DEG C)/time (hours) | Whiteness (%) | |
| Example 5 | 0.6 | Room temperature | 650/10 | Air-conditioner | 850/20 | 35 |
。
Example 3
Putting 2500 parts by weight of 40-DEG deionized water into a reaction kettle with a stirrer, stirring, adding 80 parts by weight of methyltrimethoxysilane and a small amount of acetic acid, and adjusting the pH to about 5. After methyltrimethoxysilane was dissolved, 60 parts by weight of 5% aqueous ammonia was added thereto and stirring was stopped after 10 seconds. Standing for 1 hr, filtering, and drying to obtain spherical polysiloxane. And (3) placing the polysiloxane powder into a muffle furnace for heat treatment and calcination. The heat treatment atmosphere was a mixed gas in which the volume ratio of air and nitrogen was=1/1. The analysis results of the samples are shown in Table 3 below.
TABLE 3 Table 3
| Average particle size (micron) | Onset temperature (. Degree. C.) | Heat treatment temperature (DEG C)/heating rate (DEG C/min) | Heat treatment atmosphere | Calcination temperature (DEG C)/time (hours) | Whiteness (%) | |
| Example 6 | 0.15 | Room temperature | 700/10 | Air/nitrogen=1/1 (volume ratio) | 1000/10 | 80 |
。
Example 4
1500 parts by weight of deionized water were taken at room temperature, placed in a reaction kettle with a stirrer, stirring was started, 75 parts by weight of methyltrimethoxysilane and 25 parts by weight of tetraethoxysilane were added, and stirring was performed for 1 hour. The content of T units was 82.1%. After methyltrimethoxysilane and tetraethoxysilane were dissolved, 25 wt% of 5% aqueous ammonia was added thereto and stirring was stopped after 10 seconds, to obtain spherical polysiloxane. Drying to obtain spherical powder. And (3) placing the polysiloxane powder into a muffle furnace for heat treatment and calcination. The analysis results of the samples are shown in Table 4 below.
TABLE 4 Table 4
| Average particle size (micron) | Onset temperature (. Degree. C.) | Heat treatment temperature (DEG C)/heating rate (DEG C/min) | Heat treatment atmosphere | Calcination temperature (DEG C)/time (hours) | Whiteness (%) | |
| Example 7 | 0.6 | Room temperature | 650/10 | Air-conditioner | 1000/10 | 38 |
。
Example 5
600 parts by weight of deionized water was taken at room temperature, placed in a reaction kettle with a stirrer, stirring was started, 78 parts by weight of methyltrimethoxysilane and 2 parts by weight of dimethyldimethoxysilane were added and stirred for 1 hour. The T unit content was 97.2%. After methyltrimethoxysilane and dimethyldimethoxysilane were dissolved, 5 wt% of 5% aqueous ammonia was added thereto and stirring was stopped after 10 seconds, to obtain spherical polysiloxane. Drying to obtain spherical powder. And (3) placing the polysiloxane powder into a muffle furnace for heat treatment and calcination. The analysis results of the samples are shown in Table 5 below.
TABLE 5
| Average particle size (micron) | Onset temperature (. Degree. C.) | Heat treatment temperature (DEG C)/heating rate (DEG C/min) | Heat treatment atmosphere | Calcination temperature (DEG C)/time (hours) | Whiteness (%) | |
| Example 8 | 18 | Room temperature | 700/15 | Air-conditioner | 1100/20 | ～0 |
。
Example 6
Taking deionized water with a certain weight part at room temperature, putting the deionized water into a reaction kettle with a stirrer, starting stirring, adding methyltrimethoxysilane with 78 weight parts and propyltrimethoxysilane with 2 weight parts, and stirring for 1 hour. After methyltrimethoxysilane and propyltrimethoxysilane were dissolved, 25 parts by weight of 5% aqueous ammonia was added thereto and stirring was stopped after 10 seconds, to obtain spherical polysiloxane. Drying to obtain spherical powder. And (3) placing the polysiloxane powder into a muffle furnace for heat treatment and calcination. The analysis results of the samples are shown in Table 6 below.
TABLE 6
| Average particle size (micron) | Onset temperature (. Degree. C.) | Heat treatment temperature (DEG C)/heating rate (DEG C/min) | Heat treatment atmosphere | Calcination temperature (DEG C)/time (hours) | Whiteness (%) | |
| Example 9 | 4.2 | Room temperature | 700/15 | Air-conditioner | 1100/6 | 5 |
。
Example 7
Methyl trichlorosilane is put into water to generate amorphous polymethylsiloxane. And (5) performing sand grinding, filtering and drying to obtain amorphous powder. The amorphous polysiloxane powder is placed in a muffle furnace for heat treatment and calcination. The analysis results of the samples are shown in Table 7 below.
TABLE 7
| Average particle size (micron) | Onset temperature (. Degree. C.) | Heat treatment temperature (DEG C)/heating rate (DEG C/min) | Heat treatment atmosphere | Calcination temperature (DEG C)/time (hours) | Whiteness (%) | |
| Example 10 | 60 | Room temperature | 750/8 | Air-conditioner | 1100/6 | ～0 |
。
The uranium content of all example samples of examples 1 to 10 was less than 1ppb of thorium. It should be understood that the example samples obtained in examples 1-10 above may be surface treated. Specifically, a vinylsilane coupling agent, an epoxysilane coupling agent, a disilazane, and the like may be used for the treatment as needed. More than one type of treatment may be performed as needed.
It should be understood that the preparation method includes the use of dry or wet sieving or inertial classification to remove coarse particles of 1 micron or more, 3 microns or more, 5 microns or more, 10 microns or more, 20 microns or more, 45 microns or more, 55 microns or more, or 75 microns or more from the filler.
It should be appreciated that spherical silica fillers of different particle sizes are tightly packed graded in the resin to form a composite.
The foregoing description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and various modifications can be made to the above-described embodiment of the present invention. All simple, equivalent changes and modifications made in accordance with the claims and the specification of this application fall within the scope of the patent claims. The present invention is not described in detail in the conventional art.
Claims (7)
1. A method for preparing a semiconductor packaging material or a substrate material, comprising the steps of:
s1, providing a spherical or amorphous polysiloxane comprising T units, wherein T units = R 1 SiO 3 -，R 1 A hydrocarbyl group of carbon atoms 1 to 16 independently selectable or a hydrogen atom;
s2, under an oxidizing gas atmosphere, heating the powder surface from room temperature to 600-800 ℃ at a heating rate of 1-10 ℃ per minute before the organic components in the polysiloxane particles are substantially completely oxidized, so that a compact silicon oxide layer is formed on the powder surface, and simultaneously, thermally decomposing organic groups in the heat-treated powder into carbon elements;
s3, calcining to obtain black spherical or amorphous silica filler with whiteness of less than 80%, wherein the calcining temperature is more than 800 ℃ and less than 1100 ℃ so as to condense residual silicon hydroxyl;
and S4, tightly filling and grading the black spherical or amorphous silicon oxide filler in resin to form a semiconductor packaging material or a substrate material.
2. The method of claim 1, wherein the polysiloxane further comprises Q units, D units, and/or M units, wherein Q units = SiO 4 -, D unit=r 2 R 3 SiO 2 -, M unit=r 4 R 5 R 6 SiO-，R 2 ，R 3 ，R 4 ，R 5 ，R 6 Hydrocarbyl groups of 1 to 18 carbon atoms each independently of the others.
3. The method according to claim 2, wherein the polysiloxane has a T unit material selected from the group consisting of a hydrocarbyltrialkoxysilane and a hydrocarbyltrichlorosilane, a Q unit material selected from the group consisting of a tetraalkoxysilane, silicon tetrachloride and silicon dioxide, a D unit material selected from the group consisting of a dialkyldialkoxysilane and a dialkyldichlorosilane, and a M unit material selected from the group consisting of a trihydrocarbylalkoxysilane, a trihydrocarbylchlorosilane and a hexahydrocarbyldisilazane.
4. The production method according to claim 1 or 2, characterized in that coarse particles of 1 micron or more, 3 microns or more, 5 microns or more, 10 microns or more, 20 microns or more, 45 microns or more, 55 microns or more, or 75 microns or more in the black spherical or amorphous silica filler are removed in step S4 using sieving by dry or wet method or inertial classification.
5. The method according to claim 1 or 2, wherein in step S4, the black spherical or amorphous silica filler is treated with a surface treatment agent and then tightly packed and graded in a resin to form a semiconductor encapsulation material or a substrate material.
6. A semiconductor encapsulation material or substrate material obtainable by the method of any one of claims 1 to 5.
7. Use of a semiconductor packaging material or substrate material according to claim 6 for plastic packaging material, adhesive, underfill material, chip carrier, circuit board or intermediate semi-finished products thereof.
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Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1414481A (en) * | 1972-01-18 | 1975-11-19 | Mullard Ltd | Methods of producing phosphosilicate glass patterns |
| JPH09172009A (en) * | 1995-12-20 | 1997-06-30 | Toshiba Corp | Formation of insulating film and insulating film pattern |
| TWI420595B (en) * | 2010-03-29 | 2013-12-21 | Univ Nat Sun Yat Sen | Composite dielectric material doped with nanoparticle of rare earth metal oxide embedded in silicon dioxide showing colossal dielectric response and magnetodielectric effect and manufacturing method therefor |
| JP5655384B2 (en) * | 2010-06-10 | 2015-01-21 | 東レ株式会社 | Uneven substrate and manufacturing method thereof |
| US20170141007A1 (en) * | 2015-11-17 | 2017-05-18 | Advanced Semiconductor Engineering, Inc. | Filler compositions and underfill compositions and molding compounds including the same for preparing semiconductor packages |
| CN111868918B (en) * | 2018-09-03 | 2022-07-12 | 浙江三时纪新材科技有限公司 | Preparation method of semiconductor packaging material and semiconductor packaging material obtained by same |
| CN112236393B (en) * | 2020-02-17 | 2021-10-22 | 浙江三时纪新材科技有限公司 | Preparation method of spherical silicon dioxide powder filler, powder filler obtained by preparation method and application of powder filler |
| JP7401943B2 (en) * | 2020-02-17 | 2023-12-20 | 浙江三時紀新材科技有限公司 | Method for preparing spherical silica powder filler, powder filler obtained thereby and its use |
| WO2021163847A1 (en) * | 2020-02-17 | 2021-08-26 | 浙江三时纪新材科技有限公司 | Preparation method for spherical silica powder filler, powder filler obtained thereby and use thereof |
| CN111847464B (en) * | 2020-07-27 | 2023-07-21 | 湖北科技学院 | Radiation preparation method of nano silicon dioxide |
| CN112624126A (en) * | 2020-11-26 | 2021-04-09 | 浙江三时纪新材科技有限公司 | Preparation method of hollow silica powder filler, powder filler obtained by preparation method and application of powder filler |
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- 2022-08-03 WO PCT/CN2022/110053 patent/WO2023029865A1/en active Application Filing
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| Publication number | Publication date |
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| WO2023029865A1 (en) | 2023-03-09 |
| CN113736142A (en) | 2021-12-03 |
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