CN113675182B - Planar optical coupling device and method for manufacturing the same - Google Patents
Planar optical coupling device and method for manufacturing the same Download PDFInfo
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- CN113675182B CN113675182B CN202110777990.XA CN202110777990A CN113675182B CN 113675182 B CN113675182 B CN 113675182B CN 202110777990 A CN202110777990 A CN 202110777990A CN 113675182 B CN113675182 B CN 113675182B
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- 238000010168 coupling process Methods 0.000 title claims abstract description 39
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 39
- 230000003287 optical effect Effects 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims description 8
- 238000005538 encapsulation Methods 0.000 claims abstract description 12
- 238000004806 packaging method and process Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
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- 238000004020 luminiscence type Methods 0.000 abstract description 8
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 238000005253 cladding Methods 0.000 abstract description 2
- 238000002955 isolation Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H01L2933/0066—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a planar optical coupling device and a manufacturing method thereof. The insulating pad sets up on first base island, and the receipts optical chip sets up on the insulating pad, and light guide structure sets up on receiving optical chip, and the luminescence chip sets up on light guide structure, and first pin electric connection is in the positive pole of luminescence chip, and second pin electric connection is in the negative pole of luminescence chip, and first MOSFET chip sets up on first base island and electric connection is in receiving optical chip, and first MOSFET chip and insulating pad are the setting of separating, and encapsulation layer cladding luminescence chip and first MOSFET chip. Therefore, the light transmission efficiency can be effectively improved, and the working stability of the device under a high-voltage state is improved.
Description
Technical Field
The invention relates to the technical field of photoelectric couplers, in particular to a planar optical coupling device and a manufacturing method thereof.
Background
The optocoupler (opticalcoupler equipment), which is also called an optoisolator or an optocoupler, is a device for transmitting an electrical signal by using light as a medium, and generally packages a light emitting chip (such as a light emitting diode LED) and a light receiving chip (such as a photo-sensitive semiconductor tube and a photo-resistor) in the same housing. When the input end is powered on, the light emitting chip emits light, the light receiving chip receives the light to generate photocurrent, and the photocurrent flows out of the output end, so that 'electricity-light-electricity' control is realized. The photoelectric coupler using light as medium to couple the signal of input end to output end has the advantages of small volume, long service life, no contact, strong anti-interference capability, insulation between output and input, unidirectional signal transmission, etc. and can be widely used in digital circuits.
An optocoupler having a MOSFET function is paid more attention, and is often used in power management and the like, for example, as an internal optical relay applied to a charging pile, a transformer, and the like. The traditional photoelectric coupler with the MOSFET function mainly comprises an upper-lower opposite type and a planar type.
As shown in fig. 1, the light emitting chip 1 and the light receiving chip 2 of the vertical photoelectric coupler are respectively disposed at two ends of the upper and lower brackets, the MOSFET chip 3 is disposed in a non-light receiving area, and the light receiving chip 2 and the light emitting chip 1 are encapsulated and coated by using an inner plastic packaging adhesive with light transmittance, and the light emitting chip 1 and the light receiving chip 2 need to be coated by an inner plastic packaging adhesive with light transmittance not more than 25%, so that the light beam of the light emitting chip 1 is greatly reduced, the efficiency of the light receiving chip 2 is poor, and the overall performance of the product is reduced.
As shown in fig. 2, in the conventional planar optocoupler, a dummy support 5 (False Lead) is required between the two output pins 6, 7 to connect the island and the frame body, and otherwise a floating state may occur. Since MOSFET photocouplers are often operated at high voltage (250V-600V), the dummy support 5 between the two output pins is prone to high voltage end point flashovers, resulting in overall product functionality failure.
Accordingly, it is a primary objective of the present invention to provide a planar optical coupling device and a method for manufacturing the same, so as to solve the above-mentioned problems.
Disclosure of Invention
The invention aims to provide a planar optical coupling device and a manufacturing method thereof, which can effectively improve the light transmission efficiency and improve the working stability of the device under a high-voltage state.
To achieve at least one of the advantages and other advantages, an embodiment of the invention provides a planar optical coupling device, which includes a first substrate, an insulating pad, a light receiving chip, a light guiding structure, a light emitting chip, a first lead, a second lead, a first MOSFET chip and a packaging layer.
The insulating pad sets up on first base island, and the receipts optical chip sets up on the insulating pad, and light guide structure sets up on receiving optical chip, and the luminescence chip sets up on light guide structure, and first pin electric connection is in the positive pole of luminescence chip, and second pin electric connection is in the negative pole of luminescence chip, and first MOSFET chip sets up on first base island and electric connection is in receiving optical chip, and first MOSFET chip and insulating pad are the setting of separating, and encapsulation layer cladding luminescence chip and first MOSFET chip.
In some embodiments, the light guiding structure may be a light guiding glass or a light guiding plate.
In some embodiments, the encapsulation layer is made of an opaque material.
In some embodiments, the planar optical coupling device further includes a second base island and a second MOSFET chip, where the second base island is disposed apart from the first base island, and the second MOSFET chip is disposed on the second base island and electrically connected to the light receiving chip.
In some embodiments, the planar optical coupling device further includes a first bonding wire, a second bonding wire, a third bonding wire, a fourth bonding wire, a fifth bonding wire, a sixth bonding wire, and a seventh bonding wire, wherein two ends of the first bonding wire are respectively connected with the positive electrode of the light emitting chip and the first pin, two ends of the second bonding wire are respectively connected with the negative electrode of the light emitting chip and the second pin, two ends of the third bonding wire are respectively connected with the first base island and the source electrode of the first MOSFET chip, two ends of the fourth bonding wire are respectively connected with the first base island and the source electrode of the second MOSFET chip, two ends of the fifth bonding wire are respectively connected with the first base island and the light receiving chip, two ends of the sixth bonding wire are respectively connected with the gate electrode of the first MOSFET chip and the light receiving chip, and two ends of the seventh bonding wire are respectively connected with the gate electrode of the second MOSFET chip and the light receiving chip.
In some embodiments, the first bond wire, the second bond wire, the third bond wire, the fourth bond wire, the fifth bond wire, the sixth bond wire, and the seventh bond wire are gold wires.
To achieve at least one of the advantages and other advantages, still another embodiment of the present invention further provides a method of manufacturing a planar optical coupling device, including: placing a light receiving chip and a first MOSFET chip on a first base island; placing an insulating gasket between the light receiving chip and the first base island; a light guide structure and a light emitting chip are sequentially arranged above the light receiving chip; electrically connecting the first MOSFET chip with the light receiving chip; and (5) packaging.
Further, after the step of electrically connecting the first MOSFET chip and the light receiving chip, the method further includes the following steps: setting a second base island, wherein the second base island is arranged at a distance from the first base island; and placing a second MOSFET chip on the second base island, and electrically connecting the second MOSFET chip with the light receiving chip.
Therefore, by utilizing the planar optical coupling device and the manufacturing method thereof provided by the invention, compared with the traditional vertical type photoelectric coupler, the planar optical coupling device can effectively improve the light transmission efficiency through the design of the planar bracket; by means of the arrangement of the insulating gaskets, the light receiving chip and the first MOSFET chip are arranged on the same base island, compared with a traditional planar photoelectric coupler, the Isolation (Isolation) effect of the light receiving chip can be achieved, a false supporting part is not required to be arranged, the problem that a product is invalid under high-voltage operation is avoided, and the working stability of the product under the high-voltage state is guaranteed.
The foregoing description is only an overview of the present invention, and is intended to be implemented in accordance with the teachings of the present invention, as well as the preferred embodiments thereof, together with the following detailed description, given in conjunction with the accompanying drawings.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic cross-sectional structure of a conventional up-down pair optocoupler;
fig. 2 is a schematic plan view of a conventional planar photo coupler;
FIG. 3 is a schematic cross-sectional view of a planar light coupling device of the present invention;
FIG. 4 is a schematic plan view of a planar optical coupling device according to the present invention; and
fig. 5 is a flow chart of a method of manufacturing a planar optical coupling device according to the present invention.
Reference numerals:
10-planar optical coupling means; 11-a first island; 12-a second island; 14-insulating spacers; 16-a light receiving chip; 18-a light guiding structure; 20-a light emitting chip; 21-a first pin; 22-second pins; 31-a first MOSFET chip; 32-a second MOSFET chip; 40-packaging layer; 51-a first bonding wire; 52-a second bond wire; 53-a third bond wire; 54-fourth bond wire; 55-a fifth bonding wire; 56-sixth bond wire; 57-seventh bond wire; 60-output.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be understood that the terms "center," "lateral," "upper," "lower," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate describing the present invention and simplify the description, and do not indicate or imply that the devices or components referred to must have a specific orientation or be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more. In addition, the term "comprising" and any variations thereof are meant to be "at least inclusive".
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between the two components. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Referring to fig. 3 and 4, fig. 3 is a schematic cross-sectional structure of a planar optical coupling device 10 according to the present invention, and fig. 4 is a schematic plan structure of the planar optical coupling device 10 according to the present invention. Note that, in fig. 4, the encapsulation layer 40 is omitted to clearly express the illustration. To achieve at least one of the advantages and other advantages, an embodiment of the present invention provides a planar optical coupling device 10. As shown in the figure, the planar optical coupling device 10 includes a first base island 11, an insulating pad 14, a light receiving chip 16, a light guiding structure 18, a light emitting chip 20, a first lead 21, a second lead 22, a first MOSFET chip 31, and a package layer 40.
The insulating pad 14 is disposed on the first substrate 11, and is mainly used for insulating the light receiving chip 16 from the first substrate 11. The light receiving chip 16 is disposed on the insulating pad 14, and is configured to receive light emitted by the light emitting chip 20. The light guiding structure 18 is disposed on the light receiving chip 16, and is used for guiding the light emitted by the light emitting chip 20 to irradiate the light receiving chip 16. The light emitting chip 20 is disposed on the light guiding structure 18, the first lead 21 is electrically connected to the positive electrode of the light emitting chip 20, and the second lead 22 is electrically connected to the negative electrode of the light emitting chip 20. The first MOSFET chip 31 is disposed on the first base 11 and electrically connected to the light receiving chip 16, and after receiving the voltage output by the light receiving chip 16, the first MOSFET chip 31 converts the voltage into current, and then the output terminal 60 outputs the current, and can serve as a switch, thereby facilitating unidirectional conduction of the circuit. The first MOSFET chip 31 is spaced apart from the insulating pad 14, in other words, the first MOSFET chip 31 is spaced apart from the insulating pad 14 and the devices disposed on the insulating pad 14. The encapsulation layer 40 encapsulates the light emitting chip 20 and the first MOSFET chip 31, and plays roles of light blocking, protection, and the like.
The principle of operation of the planar light coupling device 10 is as follows: when the first pin 21 and the second pin 22 are energized, the light emitting chip 20 emits light, the light irradiates the light receiving chip 16 through the light guiding structure 18, the light receiving chip 16 converts energy of the received light into electric energy to generate a light voltage, and the light voltage is applied to the first MOSFET chip 31 to push the first MOSFET chip 31 to act, and then the output end 60 outputs current.
In one embodiment, as shown in FIG. 4, the planar light coupling device 10 further includes a second base island 12 and a second MOSFET chip 32. The second base island 12 is spaced apart from the first base island 11, in other words, a certain distance is provided between the first base island 11 and the second base island 12. The second MOSFET chip 32 is disposed on the second base island 12 and electrically connected to the light receiving chip 16, and the usage of the second MOSFET chip 32 is substantially the same as that of the first MOSFET chip 31, which is not described herein. By this arrangement of the second MOSFET chip 32, the planar optical coupling device 10 can have a bidirectional switching function.
Further, the elements of the planar light coupling device 10 may be electrically connected by bonding wires. Specifically, as shown in fig. 4, the planar optical coupling device 10 further includes a first bonding wire 51, a second bonding wire 52, a third bonding wire 53, a fourth bonding wire 54, a fifth bonding wire 55, a sixth bonding wire 56, and a seventh bonding wire 57. Both ends of the first bonding wire 51 are respectively connected to the positive electrode of the light emitting chip 20 and the first pin 21. Both ends of the second bonding wire 52 are respectively connected with the negative electrode of the light emitting chip 20 and the second pin 22. Both ends of the third bonding wire 53 are connected to the sources of the first base island 11 and the first MOSFET chip 31, respectively. Both ends of the fourth bonding wire 54 are connected to the sources of the first base island 11 and the second MOSFET chip 32, respectively. Both ends of the fifth bonding wire 55 are respectively connected to the first base island 11 and the light receiving chip 16.
Both ends of the sixth bonding wire 56 are connected to the gate of the first MOSFET chip 31 and the light receiving chip 16, respectively.
Both ends of the seventh bonding wire 57 are connected to the gate of the second MOSFET chip 32 and the light receiving chip 16, respectively. In one embodiment, each bonding wire may be a gold wire, which has good electrical conductivity. In an embodiment, the light receiving chip 16 has a plurality of gates and a source, and two ends of the fifth bonding wire 55 are respectively connected to the first base island 11 and the source of the light receiving chip 16, and serve as a ground wire, so as to improve safety; both ends of the sixth bonding wire 56 are respectively connected to the gate of the first MOSFET chip 31 and one gate of the light receiving chip 16 to drive the first MOSFET chip 31; both ends of the seventh bonding wire 57 are connected to the gate of the second MOSFET chip 32 and the other gate of the light receiving chip 16, respectively, to drive the second MOSFET chip 32. Through the multi-gate arrangement of the light receiving chip 16, the first MOSFET chip 31 and the second MOSFET chip 32 can be driven respectively to meet the use requirement.
The Gate is also called the G-pole (Gate) as a control pole. The Drain is also called the D-pole (Drain) as the supply electrode. The Source is also called the S-pole (Source) as the output pole.
Referring to fig. 5 in conjunction with fig. 3 and 4, fig. 5 is a flow chart illustrating a method for manufacturing the planar optical coupling device 10 according to the present invention. To achieve at least one of the advantages and other advantages, another embodiment of the present invention further provides a method for manufacturing the planar optical coupling device 10. As shown in the drawing, the method of manufacturing the planar optical coupling device 10 includes the steps of:
s100: placing a light receiving chip and a first MOSFET chip on a first base island;
s200: placing an insulating gasket between the light receiving chip and the first base island;
s300: a light guide structure and a light emitting chip are sequentially arranged above the light receiving chip;
s400: electrically connecting the first MOSFET chip with the light receiving chip;
s500: and (5) packaging.
Further, the insulating spacer 14 is spaced apart from the first MOSFET chip 31 in step S200. The following steps may be further included between step S400 and step S500: providing a second base island 12; next, the second MOSFET chip 32 is placed on the second base island 12, and the second MOSFET chip 32 is electrically connected to the light receiving chip 16. The second base island 12 is spaced apart from the first base island 11, in other words, a certain distance is provided between the first base island 11 and the second base island 12. In step S500, the encapsulation process may be performed by encapsulating the light emitting chip 20 and the first MOSFET chip 31 with the encapsulation layer 40.
In one embodiment, the electrical connection manner between the elements includes: two ends of the first bonding wire 51 are respectively connected with the anode of the light emitting chip 20 and the first pin 21; two ends of the second bonding wire 52 are respectively connected with the cathode of the light emitting chip 20 and the second pin 22; connecting the two ends of the third bonding wire 53 to the sources of the first base island 11 and the first MOSFET chip 31, respectively; connecting two ends of the fourth bonding wire 54 to the sources of the first base island 11 and the second MOSFET chip 32 respectively; connecting two ends of the fifth bonding wire 55 with the first base island 11 and the light receiving chip 16 respectively; two ends of the sixth bonding wire 56 are respectively connected with the grid electrode of the first MOSFET chip 31 and the light receiving chip 16; both ends of the seventh bonding wire 57 are connected to the gate of the second MOSFET chip 32 and the light receiving chip 16, respectively.
In any of the above embodiments, the light guiding structure 18 may be a light guiding glass or a light guiding plate, etc. to perform a good light guiding function. In any of the above embodiments, the encapsulation layer 40 may be made of an opaque material, so as to prevent the light emitted by the light emitting chip 20 from being scattered.
In summary, by using the planar optical coupling device 10 and the manufacturing method thereof provided by the present invention, the light transmission efficiency can be effectively improved compared to the conventional vertical-type optical-to-electrical coupler through the design of the planar support. By means of the arrangement of the insulating gasket 14, the light receiving chip 16 and the first MOSFET chip 31 are arranged on the same base island, compared with a traditional planar photoelectric coupler, the Isolation (Isolation) effect of the light receiving chip 16 can be achieved, a false supporting part is not required to be arranged, the problem that a product is invalid under high-voltage operation is avoided, and the working stability of the product under a high-voltage state is guaranteed.
Although terms such as MOSFET chip, optocoupler, island, etc. are used more herein, the possibility of using other terms is not precluded. These terms are used merely for convenience in describing and explaining the nature of the invention; they are to be interpreted as any additional limitation that is not inconsistent with the spirit of the present invention.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (10)
1. A planar light coupling device, the planar light coupling device comprising:
a first island;
the insulating gasket is arranged on the first base island;
the light receiving chip is arranged on the insulating gasket;
the light guide structure is arranged on the light receiving chip;
the light-emitting chip is arranged on the light guide structure;
the first pin is electrically connected to the positive electrode of the light-emitting chip;
the second pin is electrically connected to the negative electrode of the light-emitting chip;
the first MOSFET chip is arranged on the first base island and is electrically connected with the light receiving chip, and the first MOSFET chip and the insulating gasket are arranged in a spaced mode; and
and the packaging layer is used for coating the light-emitting chip and the first MOSFET chip.
2. The planar light coupling device as claimed in claim 1 wherein the light guiding structure is a light guiding glass or a light guiding plate.
3. The planar light coupling device as claimed in claim 1 wherein the encapsulation layer is made of an opaque material.
4. The planar lightcoupling device of claim 1, further comprising a second island and a second MOSFET die, the second island being spaced apart from the first island, the second MOSFET die being disposed on the second island and electrically connected to the light receiving die.
5. The planar light coupling device according to claim 4, further comprising a first bonding wire, a second bonding wire, a third bonding wire, a fourth bonding wire, a fifth bonding wire, a sixth bonding wire, and a seventh bonding wire, wherein two ends of the first bonding wire are respectively connected to the positive electrode of the light emitting chip and the first pin, two ends of the second bonding wire are respectively connected to the negative electrode of the light emitting chip and the second pin, two ends of the third bonding wire are respectively connected to the first island and the source electrode of the first MOSFET chip, two ends of the fourth bonding wire are respectively connected to the first island and the source electrode of the second MOSFET chip, two ends of the fifth bonding wire are respectively connected to the first island and the light receiving chip, two ends of the sixth bonding wire are respectively connected to the gate electrode of the first MOSFET chip and the light receiving chip, and two ends of the seventh bonding wire are respectively connected to the gate electrode of the second MOSFET chip and the light receiving chip.
6. The planar light coupling device according to claim 5, wherein the first bonding wire, the second bonding wire, the third bonding wire, the fourth bonding wire, the fifth bonding wire, the sixth bonding wire, and the seventh bonding wire are gold wires.
7. A method of manufacturing a planar optical coupling device, comprising the steps of:
placing a light receiving chip and a first MOSFET chip on a first base island;
placing an insulating gasket between the light receiving chip and the first base island;
a light guide structure and a light emitting chip are sequentially arranged above the light receiving chip;
electrically connecting the first MOSFET chip with the light receiving chip; and
and (5) packaging.
8. The method of manufacturing a planar light coupling device according to claim 7, further comprising, after the step of electrically connecting the first MOSFET chip to the light receiving chip, the steps of:
setting a second base island, wherein the second base island is arranged at a distance from the first base island;
and placing a second MOSFET chip on the second base island, and electrically connecting the second MOSFET chip with the light receiving chip.
9. The method of manufacturing a planar light coupling device according to claim 7, wherein the light guiding structure is a light guiding glass or a light guiding plate.
10. The method of manufacturing a planar light coupling device according to claim 7, wherein an encapsulation layer is formed after the encapsulation process, the encapsulation layer being made of an opaque material.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH11177120A (en) * | 1997-12-16 | 1999-07-02 | Toshiba Corp | Optical semiconductor device |
| CN104916729A (en) * | 2014-03-14 | 2015-09-16 | 株式会社东芝 | Photocoupler |
| CN107275436A (en) * | 2013-09-12 | 2017-10-20 | 株式会社东芝 | Installing component and photo-coupler |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6943378B2 (en) * | 2003-08-14 | 2005-09-13 | Agilent Technologies, Inc. | Opto-coupler |
| JP2020047778A (en) * | 2018-09-19 | 2020-03-26 | 株式会社東芝 | Optical coupling device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11177120A (en) * | 1997-12-16 | 1999-07-02 | Toshiba Corp | Optical semiconductor device |
| CN107275436A (en) * | 2013-09-12 | 2017-10-20 | 株式会社东芝 | Installing component and photo-coupler |
| CN104916729A (en) * | 2014-03-14 | 2015-09-16 | 株式会社东芝 | Photocoupler |
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