CN113659067A - Superconducting transition edge sensor, preparation method and micro energy device - Google Patents
Superconducting transition edge sensor, preparation method and micro energy device Download PDFInfo
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- 230000007704 transition Effects 0.000 title claims abstract description 52
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000010408 film Substances 0.000 claims abstract description 219
- 229910052751 metal Inorganic materials 0.000 claims abstract description 128
- 239000002184 metal Substances 0.000 claims abstract description 128
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000010409 thin film Substances 0.000 claims abstract description 35
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 42
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 42
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 25
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 20
- 229910052750 molybdenum Inorganic materials 0.000 claims description 18
- 239000011733 molybdenum Substances 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 13
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
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- 230000001276 controlling effect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 239000002887 superconductor Substances 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4413—Type
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Abstract
The invention provides a superconducting transition edge sensor, a preparation method and a micro energy device, wherein the preparation method of the superconducting transition edge sensor comprises the following steps: providing a substrate; forming a superconducting metal film on the upper surface of the substrate; forming a normal metal film on the upper surface of the superconducting metal film, wherein the thickness ratio of the superconducting metal film to the normal metal film is 1-10; the superconducting metal film and the normal metal film are formed in a vacuum chamber. By forming a superconducting metal thin film and a normal metal thin film on a substrate and maintaining the ratio of the thicknesses of the superconducting metal thin film and the normal metal thin film within a range of 1 to 10. By controlling the thickness ratio of the superconducting metal film to the normal metal film, the transition temperature Tc uniformity and the transition interval controllability of the TES are improved.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a superconducting transition edge sensor, a preparation method and a micro-energy device.
Background
Superconducting Transition Edge detectors (TES) use substances whose resistivity abruptly transitions to zero at temperatures below a certain value (Tc). This state is called the superconducting state, this class of materials is called superconductors, and Tc is called the transition temperature of the superconductor.
TES has extremely high sensitivity to temperature measurements and is commonly used to detect kinetic energy or energy of a single photon of a particle. The TES micro energy device utilizes a steep resistance-temperature relationship (hereinafter, the steep resistance-temperature relationship is referred to as "steepness") of the superconducting TES in the superconducting transition region to realize single photon detection. The superconducting TES micro-energy device has the characteristics of wide applicable wavelength range, easiness in developing a monolithic integration micro-energy device array, capability of realizing multiplexing reading of a detector array by using a superconducting quantum interference device (SQUID) amplifier and the like. Therefore, the superconducting TES micro-energy device is widely applied to high-sensitivity single photon detection and covers X-ray and gamma-ray bands. At present, the energy resolution of the superconducting TES micro-energy device in an X-ray band is 1-2 orders of magnitude higher than that of a common Si-based semiconductor detector.
The transition temperature Tc and the transition region of TES are two key factors affecting the micro-energy device. Especially for a micro-energy device array with a large number of elements, it is required that the Tc uniformity is good and the transition region is smooth. In order to make the array micro-energy device under the same bias voltage, the energy resolution difference between unit pixels is reduced. In the existing research, a normal metal dam is deposited on the edge of the double-layer superconducting film along the current direction, so that the superconducting film is prevented from generating superconducting short circuit at the edge, and the steepness of a superconducting transition region is effectively increased. However, the prior art has very limited characteristics for regulating the transition region and may introduce additional noise.
The inventor finds the problem that the transition temperature Tc uniformity and the transition interval controllability of the existing TES are poor in the process of implementing the technical scheme.
Disclosure of Invention
In order to solve the above problems, embodiments of the present invention provide a superconducting transition edge sensor, a method for manufacturing the same, and a micro-energy device.
In one aspect, an embodiment of the present invention provides a method for manufacturing a superconducting transition edge sensor, including:
providing a substrate;
forming a superconducting metal film on the upper surface of the substrate;
forming a normal metal film on the upper surface of the superconducting metal film, wherein the thickness ratio of the superconducting metal film to the normal metal film is 1-10;
the superconducting metal film and the normal metal film are formed in a vacuum chamber.
Optionally, the superconducting metal film at least comprises a molybdenum film, and the normal metal film at least comprises a copper film;
the thickness of the molybdenum film is 40nm-500nm, and the thickness of the normal metal film is 40nm-5000 nm.
Optionally, the superconducting metal film and the normal metal film are both formed by a magnetron sputtering method;
the magnetron sputtering power for forming the superconducting metal film is 50-500W, and the air pressure is 1-10 mTorr;
The magnetron sputtering power for forming the normal metal film is 50-500W, and the air pressure is 1-10 mTorr.
Optionally, the background vacuum degree in the vacuum chamber is less than 1 × 10-8Torr。
Optionally, the width of the superconducting metal film is smaller than that of the normal metal film, and the difference between the width of the superconducting metal film and the width of the normal metal film is greater than 0 micron and smaller than 10 microns;
and/or
The length range of the double-layer superconducting thin film formed by the superconducting metal thin film and the normal metal thin film is 20-200 um, the width range is 20-200 um, and the length-width ratio is 1-10;
the area of the double-layer superconducting film is 20um multiplied by 20um to 1mm multiplied by 1 mm.
Optionally, the superconducting transition critical temperature of the double-layer superconducting thin film formed by the superconducting metal thin film and the normal metal thin filmT cBetween 40 and 500 mK.
Optionally, the substrate includes a silicon wafer and silicon nitride films, and the silicon nitride films are located on the upper and lower surfaces of the silicon wafer;
the thickness of the silicon wafer is 300-500 um;
the thickness of the silicon nitride film is 100nm-1000nm, and the stress of the silicon nitride film is less than or equal to 300 MPa.
Optionally, the silicon nitride film on the upper surface of the silicon wafer is in a suspended film structure.
Optionally, a heat conducting groove is arranged on the silicon nitride film of the suspended membrane structure.
Optionally, a silicon oxide film is arranged between the silicon wafer and the silicon nitride film, the thickness of the silicon oxide film is 100nm-1000nm, and the stress of the silicon oxide film is less than or equal to 300 Mpa.
In a second aspect, embodiments of the present invention provide a superconducting transition edge sensor, including:
a substrate;
a superconducting metal thin film formed on an upper surface of the substrate;
a normal metal film formed on the upper surface of the superconducting metal film, wherein the ratio of the thickness of the superconducting metal film to the thickness of the normal metal film is 1-10.
In a third aspect, an embodiment of the present invention provides a TES micro-energy device, including the superconducting transition edge sensor according to the second aspect.
The superconducting transition edge sensor, the preparation method and the micro energy device provided by the invention have the beneficial effects that: the present invention forms a superconducting metal film and a normal metal film on a substrate, and keeps the ratio of the thickness of the superconducting metal film to the normal metal film within the range of 1-10. By controlling the thickness ratio of the superconducting metal film to the normal metal film, the transition temperature Tc uniformity and the transition interval controllability of the TES are improved.
The width of the superconducting metal film is smaller than that of the normal metal film to form an inscribed structure, and the transition temperature Tc uniformity and transition interval controllability of the TES are further improved by controlling the inscribed structure of the superconducting metal film and the normal metal film.
In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram illustrating a cross-sectional structure of a component in a superconducting transition edge sensor array according to an embodiment of the present invention;
FIG. 2 is a schematic diagram illustrating a top view of a component in a superconducting transition edge sensor array according to an embodiment of the present invention;
Fig. 3a to 3o are schematic structural diagrams illustrating steps in a method for manufacturing a superconducting transition edge sensor according to an embodiment of the present invention.
101-copper film, 102-molybdenum film, 1031-substrate upper surface silicon nitride film, 1032-substrate lower surface silicon nitride film, 1041-substrate upper surface silicon oxide film, 1042-substrate lower surface silicon oxide film, 105-silicon substrate, 106-cavity, 107-photoresist, 201-molybdenum wire, 202-connection of molybdenum wire and TES, 203-molybdenum-copper double-layer film TES, 204-current direction and 3-heat conduction groove.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Embodiments of the present application are set forth in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
It will be understood that when an element or layer is referred to as being "on" …, "adjacent to …," "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on …," "directly adjacent to …," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types and/or sections, these elements, components, regions, layers, doping types and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type or section from another element, component, region, layer, doping type or section. Thus, a first element, component, region, layer, doping type or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application; for example, the first doping type may be made the second doping type, and similarly, the second doping type may be made the first doping type; the first doping type and the second doping type are different doping types, for example, the first doping type may be P-type and the second doping type may be N-type, or the first doping type may be N-type and the second doping type may be P-type.
Spatial relationship terms such as "under …," "under …," "under …," "over …," "over," and the like may be used herein to describe the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below …" and "below …" can encompass both an orientation of up and down. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations) and the spatial descriptors used herein interpreted accordingly.
As used herein, the singular forms "a", "an" and "the" may include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises/comprising," "includes" or "including," etc., specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Also, in this specification, the term "and/or" includes any and all combinations of the associated listed items.
Embodiments of the application are described herein with reference to cross-sectional views that are schematic illustrations of idealized embodiments (and intermediate structures) of the application, such that variations from the shapes shown are to be expected due to, for example, manufacturing techniques and/or tolerances. Thus, embodiments of the present application should not be limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing techniques. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present application.
As shown in fig. 1, a superconducting transition edge sensor includes:
a substrate;
a superconducting metal thin film formed on an upper surface of the substrate;
a normal metal film formed on the upper surface of the superconducting metal film, the ratio of the thickness of the superconducting metal film to the thickness of the normal metal film being 1 to 10;
the superconducting metal film and the normal metal film are formed in a vacuum chamber.
The superconducting metal film is smaller than a width of the normal metal film in a width direction.
Optionally, the superconducting metal film at least comprises a molybdenum film, and the normal metal film at least comprises a copper film;
the thickness of the molybdenum film is 40nm-500nm, and the thickness of the normal metal film is 40nm-5000 nm.
Optionally, the superconducting metal film and the normal metal film are both formed by a magnetron sputtering method;
the magnetron sputtering power for forming the superconducting metal film is 50-500W, and the air pressure is 1-10 mTorr;
the magnetron sputtering power for forming the normal metal film is 50-500W, and the air pressure is 1-10 mTorr.
Optionally, the vacuum degree in the vacuum chamber is less than 1 × 10-8Torr。
Optionally, the width of the superconducting metal film is smaller than that of the normal metal film, and the difference between the width of the superconducting metal film and the width of the normal metal film is greater than 0 micron and smaller than 10 microns;
and/or
The length range of the double-layer superconducting thin film formed by the superconducting metal thin film and the normal metal thin film is 20-200 um, the width range is 20-200 um, and the length-width ratio is 1-10;
the area of the double-layer superconducting film is 20um multiplied by 20um to 1mm multiplied by 1 mm.
Optionally, the superconducting transition critical temperature of the double-layer superconducting thin film formed by the superconducting metal thin film and the normal metal thin filmT cBetween 40 and 500 mK.
Optionally, the substrate includes a silicon wafer and silicon nitride films, and the silicon nitride films are located on the upper and lower surfaces of the silicon wafer;
the thickness of the silicon wafer is 300-500 um;
The thickness of the silicon nitride film is 100nm-1000nm, and the stress of the silicon nitride film is less than or equal to 300 MPa.
Optionally, the silicon nitride film on the upper surface of the silicon wafer is in a suspended film structure. Suspended membrane structure as shown in fig. 1, a silicon nitride membrane is positioned over the cavity 106.
Optionally, a heat conducting groove 3 is disposed on the silicon nitride film of the suspended film structure.
Optionally, a silicon oxide film is arranged between the silicon wafer and the silicon nitride film, the thickness of the silicon oxide film is 100nm-1000nm, and the stress of the silicon oxide film is less than or equal to 300 Mpa.
In one embodiment, the substrate comprises a silicon wafer, a silicon oxide film positioned on the upper surface of the silicon wafer, a silicon nitride film positioned on the upper surface of the silicon oxide film, a silicon oxide film positioned on the lower surface of the silicon wafer, and a silicon nitride film positioned on the lower surface of the silicon oxide film.
Accordingly, the present application discloses a method for preparing a superconducting transition edge sensor, comprising:
providing a substrate;
forming a superconducting metal film on the upper surface of the substrate;
and forming a normal metal film on the upper surface of the superconducting metal film, wherein the thickness ratio of the superconducting metal film to the normal metal film is 1-10. By controlling the thickness ratio of the superconducting metal film to the normal metal film, the transition temperature of TES is controlled T cThe width and the steepness of a superconducting transition interval are determined by the structure of a double-layer film formed by the superconducting metal film and the normal metal film.
Optionally, the superconducting metal film at least comprises a molybdenum film, and the normal metal film at least comprises a copper film;
the thickness of the molybdenum film is 40nm-500nm, and the thickness of the normal metal film is 40nm-5000 nm.
Optionally, the superconducting metal film and the normal metal film are both formed by a magnetron sputtering method;
the magnetron sputtering power for forming the superconducting metal film is 50-500W, and the air pressure is 1-10 mTorr;
the magnetron sputtering power for forming the normal metal film is 50-500W, and the air pressure is 1-10 mTorr.
Optionally, the superconducting metal film and the normal metal film are formed in a vacuum chamber, and the vacuum degree in the vacuum chamber is less than 1 × 10-8Torr。
Optionally, the width of the superconducting metal film is smaller than that of the normal metal film, and the difference between the width of the superconducting metal film and the width of the normal metal film is greater than 0 micron and smaller than 10 microns; thereby forming the inscribed structure.
And/or
The length range of the double-layer superconducting thin film formed by the superconducting metal thin film and the normal metal thin film is 20-200 um, the width range is 20-200 um, and the length-width ratio is 1-10;
The area of the double-layer superconducting film is 20um multiplied by 20um to 1mm multiplied by 1 mm.
In this embodiment, the length is along the current direction, the width is perpendicular to the current direction, and the current direction is as shown in fig. 2.
Optionally, the superconducting transition critical temperature of the double-layer superconducting thin film formed by the superconducting metal thin film and the normal metal thin filmT cBetween 40 and 500 mK. Will be provided withT cControlling between 40mK and 500mK reduces electronic noise.
Optionally, the substrate includes a silicon wafer and silicon nitride films, and the silicon nitride films are located on the upper and lower surfaces of the silicon wafer;
the thickness of the silicon wafer is 300-500 um;
the thickness of the silicon nitride film is 100nm-1000nm, and the stress of the silicon nitride film is less than or equal to 300 MPa.
Optionally, the silicon nitride film on the upper surface of the silicon wafer is in a suspended film structure. The silicon chip is arranged on the upper surfaceThe area of the silicon nitride film is within 104um2-106um2Square, rectangular or circular.
Optionally, a heat conducting groove is arranged on the silicon nitride film of the suspended membrane structure.
Optionally, a silicon oxide film is arranged between the silicon wafer and the silicon nitride film, the thickness of the silicon oxide film is 100nm-1000nm, and the stress of the silicon oxide film is less than or equal to 300 Mpa.
The silicon oxide film on the upper surface of the silicon chip is an etching barrier layer.
As shown in FIG. 2, the width of the molybdenum wire ranges from 1um to 20um, and the thickness ranges from 40 nm to 500 nm.
In this embodiment, the thickness ratio of molybdenum to copper in the molybdenum-copper double-layer film is defined, so that the superconducting transition region of the molybdenum-copper double-layer film is sufficiently large and smooth, and the steepness of the transition region satisfies the temperature sensitivity
Between tens and hundreds, whereinTIt is the temperature that is set for the purpose,Ris a resistance.
Specifically, the superconducting transition edge sensor is fabricated as shown in FIGS. 3a to 3o,
a substrate is provided, as shown in fig. 3a, the substrate comprises a silicon wafer 105, a substrate upper surface silicon nitride film 1031, a substrate lower surface silicon nitride film 1032, a substrate upper surface silicon oxide film 1041 and a substrate lower surface silicon oxide film 1042. The silicon wafer 105 is monocrystalline silicon of 100um to 500um thickness;
placing the substrate in a vacuum chamber of a magnetron sputtering system, and pumping the vacuum chamber to 2 x 10 before film growth-8Torr below;
before film deposition, cleaning and activating the surface of the silicon nitride film 1031 on the upper surface of the substrate by adopting plasma;
as shown in fig. 3b, depositing a molybdenum film 102 on the upper surface of the silicon nitride film 1031 on the upper surface of the substrate, wherein pre-sputtering is performed for 3-5 minutes when the molybdenum film 102 is deposited;
as shown in fig. 3c, the deposition of the copper film 101 is performed after the molybdenum film deposition is completed.
As shown in fig. 3d, photoresist 107 is coated on the upper surface of the molybdenum-copper double-layer film to form a 1 st patterned mask layer, wherein the 1 st patterned mask layer is to cover the molybdenum-copper double-layer film TES, the molybdenum wire and the molybdenum bonding electrode;
as shown in fig. 3e, after the 1 st patterned mask layer is formed on the upper surface of the mo-cu double-layer film, a two-step dry etching method is used to remove the cu and mo thin film materials outside the first patterned mask layer, and obtain a mo etched-in structure. The first step may be to pattern the copper in areas other than the mask layer material for the first time using ion beam etching. The second step may employ XeF2And etching the molybdenum outside the copper area by using gas, and forming a molybdenum metal film etched structure.
As shown in fig. 3f, continuously spin-coating a photoresist 107 on the upper surface of the copper film, thereby forming a 2 nd patterned mask layer, wherein the 2 nd patterned mask layer covers the molybdenum-copper double-layer film TES;
as shown in fig. 3g, after the 2 nd patterned mask layer is formed, the copper thin film material on the molybdenum wire and the molybdenum bonding electrode is removed by a dry etching method for the copper thin film.
And then, etching the molybdenum film outside the copper film by taking the photoresist/copper film as a mask layer, and enabling the width of the molybdenum film to be smaller than that of the copper film to form an internal etching structure.
As shown in fig. 3h, photoresist 107 is continuously spin-coated on the copper film and the silicon nitride film to form a 3 rd patterned mask layer, wherein the 3 rd patterned mask layer exposes a non-device region in the unit pixel plane, and the device region is a TES region of the molybdenum-copper double-layer film;
as shown in fig. 3i, after the 3 rd patterned mask side is formed, the silicon nitride/silicon oxide in the exposed region is removed by a dry etching method, and a weak heat conduction trench is formed on the upper surface of the molybdenum-copper double-layer film TES.
As shown in fig. 3j, after the mo-cu double-layer film is patterned for the 3 rd time, a photoresist is continuously spin-coated on the mo-cu double-layer film TES layer to serve as a protection layer, and a photoresist is spin-coated on the silicon oxide dielectric layer film on the lower surface of the substrate of the mo-cu double-layer film TES device to form a 4 th patterned mask layer, wherein an exposed area of the 4 th patterned mask layer is a square window of 20um × 20um to 1000um × 1000 um.
As shown in fig. 3k to 3o, after the 4 th patterned mask layer is formed, the silicon nitride, the silicon oxide dielectric layer film, the silicon substrate material and the silicon oxide film of the upper surface dielectric layer in the lower surface window of the 4 th patterned mask layer exposure region are sequentially removed by a dry etching method, and the remaining silicon nitride film is retained as a support structure.
In addition, the embodiment also discloses a TES micro-energy device which comprises the superconducting transition edge sensor.
The above description is only an embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of changes or substitutions within the technical scope of the present invention, and the present invention shall be covered by the claims. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (12)
1. A method of making a superconducting transition edge sensor, comprising:
providing a substrate;
forming a superconducting metal film on the upper surface of the substrate;
forming a normal metal film on the upper surface of the superconducting metal film, wherein the thickness ratio of the superconducting metal film to the normal metal film is 1-10;
the superconducting metal film and the normal metal film are formed in a vacuum chamber.
2. The method of manufacturing a superconducting transition edge sensor according to claim 1, wherein the superconducting metal thin film includes at least a molybdenum thin film, and the normal metal thin film includes at least a copper thin film;
the thickness of the molybdenum film is 40nm-500nm, and the thickness of the normal metal film is 40nm-5000 nm.
3. The method of manufacturing a superconducting transition edge sensor according to claim 1 or 2,
the superconducting metal film and the normal metal film are both formed by a magnetron sputtering method;
the magnetron sputtering power for forming the superconducting metal film is 50-500W, and the air pressure is 1-10 mTorr;
the magnetron sputtering power for forming the normal metal film is 50-500W, and the air pressure is 1-10 mTorr.
4. The method of making a superconducting transition edge sensor according to claim 1 or 2, wherein a degree of vacuum within the vacuum chamber is less than 1 x 10-8Torr。
5. The method of manufacturing a superconducting transition edge sensor according to claim 1 or 2,
the width of the superconducting metal film is smaller than that of the normal metal film, and the difference between the width of the superconducting metal film and the width of the normal metal film is larger than 0 micrometer and smaller than 10 micrometers;
and/or
The length range of the double-layer superconducting thin film formed by the superconducting metal thin film and the normal metal thin film is 20-200 um, the width range is 20-200 um, and the length-width ratio is 1-10;
the area of the double-layer superconducting film is 20um multiplied by 20um to 1mm multiplied by 1 mm.
6. The method of manufacturing a superconducting transition edge sensor according to claim 1 or 2,
The superconducting transition critical temperature of the double-layer superconducting film formed by the superconducting metal film and the normal metal filmT cBetween 40 and 500 mK.
7. The method of manufacturing a superconducting transition edge sensor according to claim 1 or 2,
the substrate comprises a silicon wafer and silicon nitride films, wherein the silicon nitride films are positioned on the upper surface and the lower surface of the silicon wafer;
the thickness of the silicon wafer is 300-500 um;
the thickness of the silicon nitride film is 100nm-1000nm, and the stress of the silicon nitride film is less than or equal to 300 MPa.
8. The method of claim 7, wherein the silicon nitride film on the top surface of the silicon wafer is in a suspended film structure.
9. The method of manufacturing a superconducting transition edge sensor according to claim 8,
and a heat conduction groove is arranged on the silicon nitride film of the suspended film structure.
10. The method of claim 7, wherein a silicon oxide film is disposed between the silicon wafer and the silicon nitride film, the silicon oxide film has a thickness of 100nm to 1000nm, and the silicon oxide film has a stress of 300Mpa or less.
11. A superconducting transition edge sensor, comprising:
A substrate;
a superconducting metal thin film formed on an upper surface of the substrate;
a normal metal film formed on the upper surface of the superconducting metal film, wherein the ratio of the thickness of the superconducting metal film to the thickness of the normal metal film is 1-10.
12. A TES micro-energy device comprising the superconducting transition edge sensor of claim 11.
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| CN116313283A (en) * | 2022-12-31 | 2023-06-23 | 中国计量科学研究院 | Superconducting thin film, preparation method adopting glancing angle deposition and superconducting transition edge detector |
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