CN113643842A - Doped tunneling type back silver, preparation method thereof and PERC battery comprising doped tunneling type back silver - Google Patents
Doped tunneling type back silver, preparation method thereof and PERC battery comprising doped tunneling type back silver Download PDFInfo
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- CN113643842A CN113643842A CN202110900811.7A CN202110900811A CN113643842A CN 113643842 A CN113643842 A CN 113643842A CN 202110900811 A CN202110900811 A CN 202110900811A CN 113643842 A CN113643842 A CN 113643842A
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- 229910052709 silver Inorganic materials 0.000 title claims abstract description 73
- 239000004332 silver Substances 0.000 title claims abstract description 73
- 230000005641 tunneling Effects 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title abstract description 7
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title abstract description 7
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title abstract description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 136
- 239000000843 powder Substances 0.000 claims abstract description 115
- 239000002245 particle Substances 0.000 claims abstract description 41
- 239000011521 glass Substances 0.000 claims abstract description 38
- 239000011347 resin Substances 0.000 claims abstract description 33
- 229920005989 resin Polymers 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 239000000654 additive Substances 0.000 claims abstract description 25
- 230000000996 additive effect Effects 0.000 claims abstract description 23
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 23
- 239000000956 alloy Substances 0.000 claims abstract description 23
- 239000002904 solvent Substances 0.000 claims abstract description 22
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910000521 B alloy Inorganic materials 0.000 claims abstract description 9
- 229910000676 Si alloy Inorganic materials 0.000 claims abstract description 9
- DJPURDPSZFLWGC-UHFFFAOYSA-N alumanylidyneborane Chemical compound [Al]#B DJPURDPSZFLWGC-UHFFFAOYSA-N 0.000 claims abstract description 9
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910000846 In alloy Inorganic materials 0.000 claims abstract description 6
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims abstract description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 11
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 11
- 239000005751 Copper oxide Substances 0.000 claims description 11
- 239000004952 Polyamide Substances 0.000 claims description 11
- 229910000431 copper oxide Inorganic materials 0.000 claims description 11
- 229910000464 lead oxide Inorganic materials 0.000 claims description 11
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 11
- 229920002647 polyamide Polymers 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 229910052714 tellurium Inorganic materials 0.000 claims description 11
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 11
- 238000002156 mixing Methods 0.000 claims description 10
- 238000003756 stirring Methods 0.000 claims description 10
- 239000001856 Ethyl cellulose Substances 0.000 claims description 9
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 9
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 9
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 9
- 229920001249 ethyl cellulose Polymers 0.000 claims description 9
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 9
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 7
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims description 7
- 239000004925 Acrylic resin Substances 0.000 claims description 7
- 229920000178 Acrylic resin Polymers 0.000 claims description 7
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 7
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 7
- 238000009835 boiling Methods 0.000 claims description 7
- 229910052810 boron oxide Inorganic materials 0.000 claims description 7
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 7
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 7
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 7
- 239000005011 phenolic resin Substances 0.000 claims description 7
- 229920001568 phenolic resin Polymers 0.000 claims description 7
- 229940116411 terpineol Drugs 0.000 claims description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 7
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- IFPMZBBHBZQTOV-UHFFFAOYSA-N 1,3,5-trinitro-2-(2,4,6-trinitrophenyl)-4-[2,4,6-trinitro-3-(2,4,6-trinitrophenyl)phenyl]benzene Chemical compound [O-][N+](=O)C1=CC([N+](=O)[O-])=CC([N+]([O-])=O)=C1C1=C([N+]([O-])=O)C=C([N+]([O-])=O)C(C=2C(=C(C=3C(=CC(=CC=3[N+]([O-])=O)[N+]([O-])=O)[N+]([O-])=O)C(=CC=2[N+]([O-])=O)[N+]([O-])=O)[N+]([O-])=O)=C1[N+]([O-])=O IFPMZBBHBZQTOV-UHFFFAOYSA-N 0.000 claims description 5
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 5
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 229920006217 cellulose acetate butyrate Polymers 0.000 claims description 5
- 150000002148 esters Chemical class 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 5
- 238000005096 rolling process Methods 0.000 claims description 5
- 238000007873 sieving Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 3
- XNRNVYYTHRPBDD-UHFFFAOYSA-N [Si][Ag] Chemical compound [Si][Ag] XNRNVYYTHRPBDD-UHFFFAOYSA-N 0.000 abstract description 2
- 230000008569 process Effects 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract 1
- -1 silver-aluminum Chemical compound 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910001152 Bi alloy Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- CCXYPVYRAOXCHB-UHFFFAOYSA-N bismuth silver Chemical compound [Ag].[Bi] CCXYPVYRAOXCHB-UHFFFAOYSA-N 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 241000409201 Luina Species 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- UZQSJWBBQOJUOT-UHFFFAOYSA-N alumane;lanthanum Chemical compound [AlH3].[La] UZQSJWBBQOJUOT-UHFFFAOYSA-N 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Inorganic Chemistry (AREA)
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- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- General Physics & Mathematics (AREA)
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Abstract
The invention belongs to the technical field of solar cells, and particularly relates to a tunneling-doped back silver, a preparation method thereof and a PERC cell comprising the tunneling-doped back silver, wherein the tunneling-doped back silver is composed of the following components in parts by weight: 50-70% of silver powder, wherein the silver powder consists of spherical silver powder and/or flake silver powder; 0.1-3.0% of trivalent metal powder and/or alloy powder, wherein the metal powder is one or more of boron powder, aluminum powder and indium powder, and the alloy powder is one or more of aluminum-silicon alloy powder, aluminum-boron alloy powder and aluminum-indium alloy powder; the particle size of the trivalent metal powder and the alloy powder is less than 3 mu m; 1-3% of glass powder, wherein the average particle size is 0.5-2.0 mu m, and the softening point is 450-550 ℃; 25-50% of organic carrier, including resin and solvent; 0.1-2% of additive. According to the invention, the substrate silicon is doped in the process of etching the silicon nitride and the tunneling channel is formed, so that the back silver has silver-silicon conductivity, the series resistance Rs is obviously reduced, the fill factor FF is increased, and the conversion efficiency is improved.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a doped tunneling back silver, a preparation method thereof and a PERC cell comprising the doped tunneling back silver.
Background
The improvement of the conversion efficiency is always the development direction of the solar cell, and the improvement effect of the back silver of the PERC solar cell at present is actually to reduce the damage of the back silver to a passivation layer, but does not generate efficiency gain.
For example, the publication No. CN111028976B discloses a back silver paste for an all-aluminum back field solar cell, which comprises the following raw materials of high-activity silver powder, silver-X alloy powder, bismuth powder, glass powder and an organic carrier in parts by weight, wherein the addition amount of the high-activity silver powder added into the back silver paste for the all-aluminum back field solar cell is 20-40 parts, compared with the content of the silver powder added into the conventional silver paste for the all-aluminum back field, the use amount of the silver powder is greatly reduced, the production cost is reduced, the problem that the use amount of the high-activity silver powder is reduced in a paste system to reduce the tensile force and the electrical property is solved by adding the silver-bismuth alloy, the tensile force of the solar cell using the silver-bismuth alloy powder is more than 3N, the photoelectric conversion efficiency is 19-20%, wherein the use of the silver-bismuth alloy powder has low melting point, and bismuth water melted during sintering at 270 ℃ enters into silver-aluminum gaps to form an intermediate barrier layer, the formation of silver-aluminum alloy is prevented, thereby improving solderability.
Also disclosed is an electrode paste in contact with an N-type solar cell p + emitter, as disclosed in publication No. CN112562883A, which relates to the technical field of photovoltaic cells. The electrode slurry comprises the following components in parts by weight: 80-90 parts of conductive silver powder, 0.5-3 parts of aluminum powder, 3-8 parts of glass powder, 0.1-2 parts of lanthanum-aluminum alloy powder or lanthanum-ytterbium-aluminum alloy powder, 6-10 parts of organic carrier and 0-2 parts of auxiliary agent. By selecting the components and the proportion, the conversion efficiency of the prepared slurry can exceed 23.5 percent after the slurry is applied to the N-type solar cell.
In the prior art, the silver back of the PERC solar cell does not essentially have any gain to the cell, and only damages the silicon nitride layer, so the efficiency is improved very limitedly.
Disclosure of Invention
In view of the above disadvantages, an object of the present invention is to provide a tunneling-doped back silver, a method for preparing the same, and a PERC cell comprising the same.
The invention provides the following technical scheme:
a doped tunneling type back silver comprises the following components in parts by weight:
50-70% of silver powder, wherein the silver powder consists of spherical silver powder and/or flake silver powder;
0.1-3.0% of trivalent metal powder and/or alloy powder, wherein the metal powder is one or more of boron powder, aluminum powder and indium powder, and the alloy powder is one or more of aluminum-silicon alloy powder, aluminum-boron alloy powder and aluminum-indium alloy powder; the particle size of the trivalent metal powder and the alloy powder is less than 3 mu m;
1-3% of glass powder, wherein the average particle size is 0.5-2.0 mu m, and the softening point is 450-550 ℃;
25-50% of organic carrier, including resin and solvent;
0.1-2% of additive.
The weight ratio of the spherical silver powder is 40-70%, the particle diameter is 0.3-1.0 mu m, the specific surface is 0.5-3.0 square meters per gram, and the tap density is 3.0-5.5 g/ml.
The weight ratio of the flake silver powder is 0-20%, the particle diameter is 1.0-3.0 mu m, the specific surface is 0.5-1.5 square meters per gram, and the tap density is 2.5-4.5 g/ml.
The glass powder comprises the following components in percentage by weight: 20-60% of lead oxide, 10-30% of silicon dioxide, 10-30% of copper oxide, 1-20% of manganese oxide, 1-10% of tellurium oxide, 0-20% of bismuth oxide, 0-20% of boron oxide, 0-10% of aluminum oxide, 0-10% of zinc oxide, 0-10% of chromium oxide and 0-10% of titanium oxide.
The resin accounts for 5-25% of the weight of the organic carrier, and the solvent accounts for 75-95% of the weight of the organic carrier.
The resin is one or more of ethyl cellulose, acrylic resin, PVB, CAB, rosin resin and phenolic resin; the solvent is one or more of butyl carbitol, butyl carbitol acetate, terpineol, alcohol ester dodeca and triethylene glycol monobutyl ether.
The additive is one or more of BYK-110, polyamide wax and span.
A preparation method of doped tunneling type back silver comprises the following steps:
s1, preparing silver powder; preparing spherical silver powder with the particle size of 0.3-1.0 mu m, the specific surface area of 0.5-3.0 square meters/g and the tap density of 3.0-5.5 g/ml; preparing flake silver powder with the particle size of 1.0-3.0 microns, the specific surface area of 0.5-1.5 square meters per gram and the tap density of 2.5-4.5 g/ml;
s2, preparing trivalent metal powder and alloy powder with good dispersibility, wherein the particle size of the trivalent metal powder and the alloy powder is smaller than 3 mu m, the metal powder is one or more of boron powder, aluminum powder and indium powder, and the alloy powder is one or more of aluminum-silicon alloy powder, aluminum-boron alloy powder and aluminum-indium alloy powder;
s3, preparing glass powder; the glass powder comprises the following components in percentage by weight: 20-60% of lead oxide, 10-30% of silicon dioxide, 10-30% of copper oxide, 1-20% of manganese oxide, 1-10% of tellurium oxide, 0-20% of bismuth oxide, 0-20% of boron oxide, 0-10% of aluminum oxide, 0-10% of zinc oxide, 0-10% of chromium oxide and 0-10% of titanium oxide; preparing glass powder with average particle size of 0.5-2.0 μm, softening point of 450-550 ℃ and high silver melting capability;
s4, preparing an organic carrier, mixing resin and a solvent, heating and stirring, wherein the boiling temperature is 60-80 ℃;
s5, preparing an additive; the additive is one or more of BYK-100, polyamide wax and span;
s6, mixing 50-70% of silver powder, 0.1-3.0% of trivalent metal powder and/or alloy powder, 1-3% of glass powder, 25-50% of organic carrier and 0.1-2% of additive, stirring and dispersing for 1-2 hours by using a double-planet stirrer, rolling for 3-10 times by using a three-roll grinder, and sieving by using a 300-600 mesh sieve to obtain the doped tunneling type back silver.
In S4, the resin accounts for 5-25% of the weight of the organic carrier, and the solvent accounts for 75-95% of the weight of the organic carrier; the resin is one or more of ethyl cellulose, acrylic resin, PVB, CAB, rosin resin and phenolic resin; the solvent is one or more of butyl carbitol, butyl carbitol acetate, terpineol, alcohol ester dodeca and triethylene glycol monobutyl ether.
A PERC battery comprises the doped tunneling type back silver.
The invention has the beneficial effects that:
the glass powder has low softening point and higher silver melting capacity, and a glass tunneling layer is formed between silver and silicon base after the glass powder is softened; trivalent metal powder and/or alloy powder with the grain diameter smaller than 3 microns is introduced, and the dispersion is good, so that the trivalent metal powder and/or the alloy powder can be doped into the silicon substrate under the action of the glass powder, and the silicon substrate is locally doped at the silver-back position. According to the invention, the substrate silicon is doped in the process of corroding the silicon nitride and the tunneling channel is formed, so that the back silver has silver-silicon conductivity, the series resistance Rs is obviously reduced, the fill factor FF is increased, and the conversion efficiency is improved.
Detailed Description
Example one
A doped tunneling type back silver comprises the following components in parts by weight:
50-70% of silver powder, wherein the silver powder consists of spherical silver powder and/or flake silver powder, the weight ratio of the spherical silver powder to the back silver is 40-70%, the particle size is 0.3-1.0 mu m, the specific surface is 0.5-3.0 square meters per gram, the tap density is 3.0-5.5 g/ml, the weight ratio of the flake silver powder to the back silver is 0-20%, the particle size is 1.0-3.0 mu m, the specific surface is 0.5-1.5 square meters per gram, and the tap density is 2.5-4.5 g/ml;
0.1-3.0% of trivalent metal powder and/or alloy powder, wherein the metal powder is one or more of boron powder, aluminum powder and indium powder, and the alloy powder is one or more of aluminum-silicon alloy powder, aluminum-boron alloy powder and aluminum-indium alloy powder; the particle size of the trivalent metal powder and the alloy powder is less than 3 mu m;
1-3% of glass powder, wherein the average particle size of the glass powder is 0.5-2.0 mu m, the softening point of the glass powder is 450-550 ℃, and the glass powder comprises the following components in percentage by weight: 20-60% of lead oxide, 10-30% of silicon dioxide, 10-30% of copper oxide, 1-20% of manganese oxide, 1-10% of tellurium oxide, 0-20% of bismuth oxide, 0-20% of boron oxide, 0-10% of aluminum oxide, 0-10% of zinc oxide, 0-10% of chromium oxide and 0-10% of titanium oxide;
the organic carrier comprises 25-50% of resin and solvent, wherein the resin accounts for 5-25% of the weight of the organic carrier, the solvent accounts for 75-95% of the weight of the organic carrier, the resin is one or more of ethyl cellulose, acrylic resin, PVB, CAB, rosin resin and phenolic resin, and the solvent is one or more of butyl carbitol, butyl carbitol acetate, terpineol, alcohol ester dodeca and triethylene glycol monobutyl ether;
0.1-2% of additive, wherein the additive is one or more of BYK-110, polyamide wax and span.
Example two
A doped tunneling type back silver comprises the following components in parts by weight:
60% of silver powder, wherein the weight ratio of the spherical silver powder to the back silver is 50%, the particle size is 0.7 mu m, the specific surface area is 2.0 square meters per gram, and the tap density is 3.0 g/ml; the weight ratio of the flake silver powder to the back silver is 10%, the particle size is 1.5 mu m, the specific surface is 1.0 square meter/g, and the tap density is 3.5 g/ml;
the trivalent metal powder is boron powder, the particle size is 1 mu m, and the trivalent metal powder has good dispersibility;
2% of glass powder, wherein 35% of lead oxide, 15% of silicon dioxide, 20% of copper oxide, 10% of manganese oxide, 5% of tellurium oxide, 5% of bismuth oxide, 6% of boron oxide, 2% of aluminum oxide and 2% of zinc oxide;
35% of organic carrier, and the boiling temperature is 70 ℃, wherein the ethyl cellulose accounts for 10%, the acrylic resin accounts for 2%, the alcohol ester accounts for 70%, and the butyl carbitol acetate accounts for 18%;
1% of additive, wherein BYK-1100.5% and span 0.5%.
EXAMPLE III
A doped tunneling type back silver comprises the following components in parts by weight:
50% of silver powder, 50% of spherical silver powder in the weight ratio of the back silver, 0.4 μm of particle size, 3.0 square meter per gram of specific surface, and 4.0g/ml of tap density; the weight ratio of the flaky silver powder to the back silver is 0 percent;
the trivalent metal powder is aluminum-silicon alloy powder, has the particle size of 2 mu m and has good dispersibility;
3% of glass powder, wherein the lead oxide accounts for 60%, the silicon dioxide accounts for 10%, the copper oxide accounts for 10%, the manganese oxide accounts for 4%, the tellurium oxide accounts for 6%, the chromium oxide accounts for 4%, and the titanium oxide accounts for 6%;
43% of organic carrier, and the decocting temperature is 60 ℃, wherein the CAB resin is 3%, the PVB resin is 12%, the terpineol is 60%, and the butyl carbitol acetate is 25%;
1% of additive, wherein BYK-1100.5% and 0.5% of polyamide wax.
Example four
A doped tunneling type back silver comprises the following components in parts by weight:
70 percent of silver powder, wherein the weight ratio of the spherical silver powder to the back silver is 50 percent, the particle size is 0.8 mu m, the specific surface is 1.5 square meters per gram, and the tap density is 4.5 g/ml; the weight ratio of the flake silver powder to the back silver is 20%, the particle size is 2.5 mu m, the specific surface is 0.7 square meter/g, and the tap density is 3.0 g/ml;
the trivalent metal powder is aluminum-boron alloy powder, the particle size is 0.5 mu m, and the dispersibility is good;
1% of glass powder, wherein 40% of lead oxide, 20% of silicon dioxide, 20% of copper oxide, 10% of tellurium oxide, 2% of aluminum oxide and 8% of bismuth oxide;
28% of organic carrier, and the boiling temperature is 80 ℃, wherein the rosin resin is 4%, the phenolic resin is 1%, the ethyl cellulose is 5%, the butyl carbitol acetate is 80%, and the butyl ether is 10%;
1% of additive, wherein, 0.5% of span and 0.5% of polyamide wax.
EXAMPLE five
A preparation method of doped tunneling type back silver comprises the following steps:
s1, preparing silver powder; spherical silver powder with the particle size of 0.7 mu m, the specific surface area of 2.0 square meters/g and the tap density of 3.0g/ml is prepared; preparing the flaky silver powder with the particle diameter of 1.5 mu m, the specific surface area of 1.0 square meter/g and the tap density of 3.5 g/ml;
s2, preparing trivalent boron powder with good dispersibility, wherein the particle size of the trivalent boron powder is 1 mu m;
s3, preparing glass powder; the glass powder comprises the following components in percentage by weight: 35% of lead oxide, 15% of silicon dioxide, 20% of copper oxide, 10% of manganese oxide, 5% of tellurium oxide, 5% of bismuth oxide, 6% of boron oxide, 2% of aluminum oxide and 2% of zinc oxide; preparing glass powder with average particle size of 0.5-2.0 μm, softening point of 450-550 ℃ and high silver melting capability;
s4, preparing an organic carrier, mixing the resin and the solvent, heating and stirring, wherein the boiling temperature is 70 ℃; the resin accounts for 5-25% of the weight of the organic carrier, and the solvent accounts for 75-95% of the weight of the organic carrier; 10% of ethyl cellulose, 2% of acrylic resin, 70% of alcohol ester and 18% of butyl carbitol acetate;
s5, preparing an additive; the additives are BYK-110 and span;
s6, mixing 60% of silver powder, 2% of trivalent boron powder, 2% of glass powder, 35% of organic carrier and 1% of additive, wherein the spherical silver powder accounts for 50% of the back silver by weight, the flake silver powder accounts for 10% of the back silver by weight, the BYK-110 accounts for 0.5% of the back silver by weight, the span accounts for 0.5% of the back silver by weight, stirring and dispersing for 1-2 hours by using a double-planet stirrer, rolling for 3-10 times by using a three-roll grinder, and sieving by using a 300-600-mesh sieve to obtain the doped tunneling type back silver.
EXAMPLE six
A preparation method of doped tunneling type back silver comprises the following steps:
s1, preparing silver powder; spherical silver powder with the particle size of 0.4 mu m, the specific surface area of 3.0 square meters/g and the tap density of 4.0g/ml is prepared;
s2, preparing aluminum-silicon alloy powder with good dispersibility, wherein the particle size of the aluminum-silicon alloy powder is 2 mu m;
s3, preparing glass powder; the glass powder comprises the following components in percentage by weight: 60% of lead oxide, 10% of silicon dioxide, 10% of copper oxide, 4% of manganese oxide, 6% of tellurium oxide, 4% of chromium oxide and 6% of titanium oxide; preparing glass powder with average particle size of 0.5-2.0 μm, softening point of 450-550 ℃ and high silver melting capability;
s4, preparing an organic carrier, mixing the resin and the solvent, heating and stirring, wherein the boiling temperature is 60 ℃; the resin accounts for 5-25% of the weight of the organic carrier, and the solvent accounts for 75-95% of the weight of the organic carrier; 3% of CAB resin, 12% of PVB resin, 60% of terpineol and 25% of butyl carbitol acetate;
s5, preparing an additive; the additives are polyamide wax and BYK-110;
s6, mixing 50% of silver powder, 3% of trivalent boron powder, 3% of glass powder, 43% of organic carrier and 1% of additive, wherein the spherical silver powder accounts for 50% of the back silver by weight, the BYK-110 accounts for 0.5% of the back silver by weight, and the polyamide wax accounts for 0.5% of the back silver by weight, stirring and dispersing for 1-2 hours by using a double-planet stirrer, rolling for 3-10 times by using a three-roll grinder, and sieving by using a 300-600-mesh sieve to obtain the doped tunneling type back silver.
EXAMPLE seven
A preparation method of doped tunneling type back silver comprises the following steps:
s1, preparing silver powder; spherical silver powder with the particle size of 0.8 mu m, the specific surface area of 1.5 square meters/g and the tap density of 4.5g/ml is prepared; preparing the flaky silver powder with the particle diameter of 2.5 microns, the specific surface area of 0.7 square meter/g and the tap density of 3.0 g/ml;
s2, preparing aluminum boron alloy powder with good dispersibility, wherein the particle size of the trivalent boron powder is 0.5 mu m;
s3, preparing glass powder; the glass powder comprises the following components in percentage by weight: 40% of lead oxide, 20% of silicon dioxide, 20% of copper oxide, 10% of tellurium oxide, 2% of aluminum oxide and 8% of bismuth oxide; preparing glass powder with average particle size of 0.5-2.0 μm, softening point of 450-550 ℃ and high silver melting capability;
s4, preparing an organic carrier, mixing the resin and the solvent, heating and stirring, wherein the boiling temperature is 80 ℃; the resin accounts for 5-25% of the weight of the organic carrier, and the solvent accounts for 75-95% of the weight of the organic carrier; 4% of rosin resin, 1% of phenolic resin, 5% of ethyl cellulose, 80% of butyl carbitol acetate and 10% of butyl ether glycol;
s5, preparing an additive; the additive is polyamide wax and span;
s6, mixing 70% of silver powder, 1% of aluminum-boron alloy powder, 1% of glass powder, 28% of organic carrier and 1% of additive, wherein the spherical silver powder accounts for 50% of the back silver by weight, the flake silver powder accounts for 20% of the back silver by weight, the polyamide wax accounts for 0.5% of the back silver by weight, the span accounts for 0.5% of the back silver by weight, stirring and dispersing for 1-2 h by using a double-planet stirrer, rolling for 3-10 times by using a three-roll grinder, and sieving by using a 300-600-mesh sieve to obtain the doped tunneling type back silver.
Example eight
A PERC battery comprises the doped tunneling type back silver.
The conversion efficiency and welding tension test of the invention were carried out, wherein the back silver of the present scheme 1 was prepared from the formulation of example two and the preparation method of example five, the back silver of the present scheme 2 was prepared from the formulation of example three and the preparation method of example six, the back silver of the present scheme 3 was prepared from the formulation of example four and the preparation method of example seven, and the back silver produced by manufacturer a was selected as the comparative product. The following test results were obtained:
| Uoc | Isc | FF | Rs | Rsh | Eta | number of tablets | Welding tension | |
| Comparison product | 0.6895 | 18.222 | 80.68 | 1.38 | 869 | 22.98 | 200 | 5.7N |
| Scheme 1 | 0.6886 | 18.239 | 80.95 | 1.27 | 712 | 23.05 | 200 | 5.2N |
| Scheme 2 | 0.6881 | 18.242 | 80.97 | 1.26 | 657 | 23.04 | 200 | 5.0N |
| Scheme 3 | 0.6891 | 18.241 | 80.89 | 1.29 | 838 | 23.06 | 200 | 5.9N |
As can be seen from the table above, compared with a comparison product, the series resistance Rs is remarkably reduced, the filling factor FF is increased, and the conversion efficiency can be improved in the scheme 1-3.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The doped tunneling back silver is characterized by comprising the following components in parts by weight:
50-70% of silver powder, wherein the silver powder consists of spherical silver powder and/or flake silver powder;
0.1-3.0% of trivalent metal powder and/or alloy powder, wherein the metal powder is one or more of boron powder, aluminum powder and indium powder, and the alloy powder is one or more of aluminum-silicon alloy powder, aluminum-boron alloy powder and aluminum-indium alloy powder; the particle size of the trivalent metal powder and the alloy powder is less than 3 mu m;
1-3% of glass powder, wherein the average particle size is 0.5-2.0 mu m, and the softening point is 450-550 ℃;
25-50% of organic carrier, including resin and solvent;
0.1-2% of additive.
2. The doped tunneling-type back silver of claim 1, wherein: the weight ratio of the spherical silver powder is 40-70%, the particle diameter is 0.3-1.0 mu m, the specific surface is 0.5-3.0 square meters per gram, and the tap density is 3.0-5.5 g/ml.
3. The doped tunneling-type back silver of claim 2, wherein: the weight ratio of the flake silver powder is 0-20%, the particle diameter is 1.0-3.0 mu m, the specific surface is 0.5-1.5 square meters per gram, and the tap density is 2.5-4.5 g/ml.
4. The doped tunneling-type back silver of claim 1, wherein: the glass powder comprises the following components in percentage by weight: 20-60% of lead oxide, 10-30% of silicon dioxide, 10-30% of copper oxide, 1-20% of manganese oxide, 1-10% of tellurium oxide, 0-20% of bismuth oxide, 0-20% of boron oxide, 0-10% of aluminum oxide, 0-10% of zinc oxide, 0-10% of chromium oxide and 0-10% of titanium oxide.
5. The doped tunneling-type back silver of claim 1, wherein: the resin accounts for 5-25% of the weight of the organic carrier, and the solvent accounts for 75-95% of the weight of the organic carrier.
6. The doped tunneling-type back silver of claim 5, wherein: the resin is one or more of ethyl cellulose, acrylic resin, PVB, CAB, rosin resin and phenolic resin; the solvent is one or more of butyl carbitol, butyl carbitol acetate, terpineol, alcohol ester dodeca and triethylene glycol monobutyl ether.
7. The doped tunneling-type back silver of claim 1, wherein: the additive is one or more of BYK-110, polyamide wax and span.
8. The preparation method of the doped tunneling-type back silver as claimed in any one of claims 1 to 7, comprising the following steps:
s1, preparing silver powder; preparing spherical silver powder with the particle size of 0.3-1.0 mu m, the specific surface area of 0.5-3.0 square meters/g and the tap density of 3.0-5.5 g/ml; preparing flake silver powder with the particle size of 1.0-3.0 microns, the specific surface area of 0.5-1.5 square meters per gram and the tap density of 2.5-4.5 g/ml;
s2, preparing trivalent metal powder and alloy powder with good dispersibility, wherein the particle size of the trivalent metal powder and the alloy powder is smaller than 3 mu m, the metal powder is one or more of boron powder, aluminum powder and indium powder, and the alloy powder is one or more of aluminum-silicon alloy powder, aluminum-boron alloy powder and aluminum-indium alloy powder;
s3, preparing glass powder; the glass powder comprises the following components in percentage by weight: 20-60% of lead oxide, 10-30% of silicon dioxide, 10-30% of copper oxide, 1-20% of manganese oxide, 1-10% of tellurium oxide, 0-20% of bismuth oxide, 0-20% of boron oxide, 0-10% of aluminum oxide, 0-10% of zinc oxide, 0-10% of chromium oxide and 0-10% of titanium oxide; preparing glass powder with average particle size of 0.5-2.0 μm, softening point of 450-550 ℃ and high silver melting capability;
s4, preparing an organic carrier, mixing resin and a solvent, heating and stirring, wherein the boiling temperature is 60-80 ℃;
s5, preparing an additive; the additive is one or more of BYK-100, polyamide wax and span;
s6, mixing 50-70% of silver powder, 0.1-3.0% of trivalent metal powder and/or alloy powder, 1-3% of glass powder, 25-50% of organic carrier and 0.1-2% of additive, stirring and dispersing for 1-2 hours, rolling for 3-10 times, and sieving by using a 300-600 mesh sieve to obtain the doped tunneling type back silver.
9. The method for preparing doped tunneling-type back silver according to claim 8, wherein: in S4, the resin accounts for 5-25% of the weight of the organic carrier, and the solvent accounts for 75-95% of the weight of the organic carrier; the resin is one or more of ethyl cellulose, acrylic resin, PVB, CAB, rosin resin and phenolic resin; the solvent is one or more of butyl carbitol, butyl carbitol acetate, terpineol, alcohol ester dodeca and triethylene glycol monobutyl ether.
10. A PERC cell, characterized by: comprising a doped tunneling type back silver according to any one of claims 1-7.
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| CN114656154A (en) * | 2022-03-10 | 2022-06-24 | 四川东树新材料有限公司 | Glass powder, back silver paste for high-performance PERC battery and preparation method of back silver paste |
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| CN106782759A (en) * | 2017-01-18 | 2017-05-31 | 广州市儒兴科技开发有限公司 | A kind of back side silver paste for PERC crystal silicon solar energy batteries and preparation method thereof |
| CN112687420A (en) * | 2021-01-08 | 2021-04-20 | 南通天盛新能源股份有限公司 | Low-temperature sintered silver paste and preparation method thereof |
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| CN106782759A (en) * | 2017-01-18 | 2017-05-31 | 广州市儒兴科技开发有限公司 | A kind of back side silver paste for PERC crystal silicon solar energy batteries and preparation method thereof |
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| CN114656154A (en) * | 2022-03-10 | 2022-06-24 | 四川东树新材料有限公司 | Glass powder, back silver paste for high-performance PERC battery and preparation method of back silver paste |
| CN114656154B (en) * | 2022-03-10 | 2024-04-02 | 四川东树新材料有限公司 | Glass powder, high-performance rear silver paste for PERC battery and preparation method of rear silver paste |
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