CN113644152B - 一种薄化晶硅电池组件 - Google Patents
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- 229910052593 corundum Inorganic materials 0.000 description 1
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Abstract
本发明公开了一种薄化晶硅电池组件，本发明的电池组件包括抗反射玻璃、EVA薄膜、电池片组、TPT薄膜和铝框，所述的抗反射玻璃设置在EVA薄膜上方，EVA薄膜设置在电池片组上方，电池片组设置在TPT薄膜上方，所述的抗反射玻璃、EVA薄膜、电池片组、TPT薄膜通过铝框包围，其中抗反射玻璃顶面低于铝框的顶面；所述的电池片组由多个薄化晶硅电池串接组成；发明结构简单，提高了输出功率，尤其在光照入射角0‑30度范围内具有明显提高输出功率的效果。本发明对晶硅电池未来走向薄化以及薄化晶硅电池组件功率提升提供了有意义的指导。
Description
技术领域
本发明涉及电池领域，具体涉及一种薄化晶硅电池组件。
背景技术
晶硅太阳能电池以地壳原材料储量丰富、无毒性、器件高稳定性等独特优势占据了全球光伏市场95％份额。目前，晶硅光伏行业主流产品是PERC电池，采用的硅片典型厚度180微米左右。根据国际光伏技术路线图预测，商业晶硅PERC电池将走向薄片化。在接下来七年内，晶硅厚度逐步减小到150微米。其收益是达到降低电池的成本，这是因为晶硅材料的成本占据了电池成本的65％之高。对应光伏太阳的应用，通常是采用组件形式，即，由多个单片电池组成。然而，采用目前商业电池技术方案，电池片的薄化会引起电池转换效率以及电池组件的输出功率的减小，不利于实现高性价比。
发明内容
本发明针对现有技术的不足，提出了一种提高薄化晶硅电池组件输出功率方法。
一种薄化晶硅电池组件，所述的电池组件包括抗反射玻璃、EVA薄膜、电池片组、TPT薄膜和铝框，所述的抗反射玻璃设置在EVA薄膜上方，EVA薄膜设置在电池片组上方，电池片组设置在TPT薄膜上方，所述的抗反射玻璃、EVA薄膜、电池片组、TPT薄膜通过铝框包围，其中抗反射玻璃顶面低于铝框的顶面；所述的电池片组由多个薄化晶硅电池串接组成；
每个薄化晶硅电池从上到下依次包括第一SiNx薄膜、SiO2钝化薄膜、p型单晶硅片、Al2O3薄膜、第二SiNx薄膜和SiOx薄膜；所述的p型单晶硅片上表面织构化，且p型单晶硅形成n+发射极，得到p-n结，其中n+发射极的掺杂浓度为(1.0±0.2)×1018/cm3，p型单晶硅片背面采用激光打孔，并在孔内形成p+局部背表面场，并设置铝金属触点；p型单晶硅片上表面设有选择性发射结，发射结上设有金属电极；所述的第一SiNx薄膜厚度为60-75纳米、SiO2钝化薄膜厚度为8-10纳米、p型单晶硅片厚度为100-150微米、Al2O3薄膜厚度为8-10纳米、第二SiNx薄膜厚度为30-40纳米，SiOx薄膜厚度为80-250纳米。
作为优选，所述的薄化晶硅电池还包括第一SiOx薄膜；其中第一SiOx薄膜设置在第一SiNx薄膜上方；所述的第一SiOx薄膜厚度为40-45纳米。
作为优选，所述抗反射玻璃厚度为2.2mm，其中抗反射层厚度110nm。
作为优选，所述的EVA薄膜厚度为0.45mm。
作为优选，所述的铝框的垂直截面为L型，其中竖直部分长度为4cm，宽度为1.1cm，水平部分宽度为0.2cm，水平部分长度为3cm；其中抗反射玻璃厚度顶面距离铝框的顶面的高度为0.3cm。
本发明相对于现有技术具有的效果：本发明结构简单，提高了输出功率，尤其在光照入射角0-30度范围内具有明显提高输出功率的效果。本发明对晶硅电池未来走向薄化以及薄化晶硅电池组件功率提升提供了有意义的指导。
附图说明
图1是本发明电池结构示意图；
图2为薄化晶硅电池组件示意图；
图3为薄化晶硅电池组件与铝框的关系图；
图4为72片薄化晶硅电池组件电路图；
图5为模拟计算得到的薄化晶硅电池组件I-V图；
图6为模拟的薄化晶硅电池组件传统结构设计和本新设计结构的输出功率随光入射角的依赖关系。
具体实施方式
如图2所示，一种薄化晶硅电池组件，所述的电池组件包括抗反射玻璃、EVA薄膜、电池片组、TPT薄膜和铝框，所述的抗反射玻璃设置在EVA薄膜上方，EVA薄膜设置在电池片组上方，电池片组设置在TPT薄膜上方，所述的抗反射玻璃、EVA薄膜、电池片组、TPT薄膜通过铝框包围，其中抗反射玻璃顶面低于铝框的顶面；所述的电池片组由多个薄化晶硅电池串接组成；所述的铝框的垂直截面为L型，其中竖直部分长度为4cm，宽度为1.1cm，水平部分宽度为0.2cm，水平部分长度为3cm；其中抗反射玻璃厚度顶面距离铝框的顶面的高度为0.3cm。所述抗反射玻璃厚度为2.2mm，其中抗反射层厚度110nm；所述的EVA薄膜厚度为0.45mm。如图3中参数为Wf＝1.1cm,Zf＝4cm，Zl＝0.3cm，Wb＝1.9cm,Zb＝0.2cm。
如图1所示，每个薄化晶硅电池从上到下依次包括第一SiOx薄膜、第一SiNx薄膜、SiO2钝化薄膜、p型单晶硅片、Al2O3薄膜、第二SiNx薄膜和第二SiOx薄膜；所述的p型单晶硅片上表面织构化，且p型单晶硅形成n+发射极，得到p-n结，其中n+
发射极的掺杂浓度为(1.0±0.2)×1018/cm3，p型单晶硅片背面采用激光打孔，并在孔内形成p+局部背表面场，并设置铝金属触点；p型单晶硅片上表面设有选择性发射结，发射结上设有金属电极；所述的第一SiNx薄膜厚度为60-75纳米、SiO2钝化薄膜厚度为8-10纳米、p型单晶硅片厚度为100-150微米、Al2O3薄膜厚度为8-10纳米、第二SiNx薄膜厚度为30-40纳米，SiOx薄膜厚度为80-250纳米。
对组件性能的模拟计算，采用和结合了行业内高可信度的两种商用科学计算软件Quokka3和SunsolveTM。Quokka3被用来计算单个电池片的光伏参数，包括短路电路密度、开路电压、填充因子、转换效率。Quokka数值求解了准中性硅器件中一维/二维/三维稳态载流子输运问题。它使用所谓的“导电边界”来解释在近表面区域(例如扩散或逆温层)增加的横向电导率，从而模拟大多数硅太阳能电池器件，没有明显的一般性损失。
SunsolveTM被用来计算电池组件的I-V特性及输出功率。该方法是基于光线跟踪计算。在目前的计算中，我们设定了每个计算包包括5000个光线，每次运行5×106光线,每个光线反弹10000次。这些参数设置确保模了拟结果的高可靠性。
通过模拟计算，得到的本发明电池组件I-V特征如图5。太阳每天东起西落。对于固定的电池组件，不同太阳光射角度，产生的输出功率也不同。因此，我们也模拟计算了电池组件输出功率随光入射角的依赖关系，见图6，包括传统电池结构设计和本新设计结构两种。通过对比，一方面，可以看到，在射入角为0度时，传统设计和新设计两种组件产生的输出功率最高，分别为376瓦和390瓦。此时，新设计组件的输出功率比传统设计组件输出功率提高了14瓦。表明了本新结构设计在提升输出功率方面的有效性。另一方面，从图6上看出，随着入射角的增大，两种组件的输出功率均呈现减小的趋势。而且，两种组件的输出功率差也逐渐减小，主要的差别体现在入射角0-30度范围内。这表明，本发明设计组件在光照入射角0-30度范围内具有明显提高输出功率的效果。本发明对晶硅电池未来走向薄化以及薄化晶硅电池组件功率提升提供了有意义的指导。
电池片的连接分布如图4所示，布局为6列，每列12片；电池片横向和纵向间距分别是0.4cm和0.3cm；也适用于36、48、60片等各种片数及各种电池片分布组合。
Claims (5)
1.一种薄化晶硅电池组件，其特征在于：所述的电池组件在光照入射角0-30度范围内具有明显提高输出功率的效果，包括抗反射玻璃、EVA薄膜、电池片组、TPT薄膜和铝框，所述的抗反射玻璃设置在EVA薄膜上方，EVA薄膜设置在电池片组上方，电池片组设置在TPT薄膜上方，所述的抗反射玻璃、EVA薄膜、电池片组、TPT薄膜通过铝框包围，其中抗反射玻璃顶面低于铝框的顶面；所述的电池片组由多个薄化晶硅电池串接组成；
每个薄化晶硅电池从上到下依次包括第一SiNx薄膜、SiO2钝化薄膜、p型单晶硅片、Al2O3薄膜、第二SiNx薄膜和第一SiOx薄膜；所述的p型单晶硅片上表面织构化，且p型单晶硅形成n+发射极，得到p-n结，其中n+发射极的掺杂浓度为(1.0±0.2)×1018/cm3，p型单晶硅片背面采用激光打孔，并在孔内形成p+局部背表面场，并设置铝金属触点；p型单晶硅片上表面设有选择性发射结，发射结上设有金属电极；所述的第一SiNx薄膜厚度为60-75纳米、SiO2钝化薄膜厚度为8-10纳米、p型单晶硅片厚度为100-150米、Al2O3薄膜厚度为8-10纳米、第二SiNx薄膜厚度为30-40纳米，第一SiOx薄膜厚度为80-250纳米。
2.根据权利要求1所述的一种薄化晶硅电池组件，其特征在于：所述的薄化晶硅电池还包括第二SiOx薄膜；其中第二SiOx薄膜设置在第一SiNx薄膜上方；所述的第二SiOx薄膜厚度为40-45纳米。
3.根据权利要求1所述的一种薄化晶硅电池组件，其特征在于：所述抗反射玻璃厚度为2.2mm，其中抗反射层厚度110nm。
4.根据权利要求1所述的一种薄化晶硅电池组件，其特征在于：所述的EVA薄膜厚度为0.45mm。
5.根据权利要求1所述的一种薄化晶硅电池组件，其特征在于：所述的铝框的垂直截面为L型，其中竖直部分长度为4cm，宽度为1.1cm，水平部分宽度为0.2cm，水平部分长度为3cm；其中抗反射玻璃厚度顶面距离铝框的顶面的高度为0.3cm。
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| CN104505439A (zh) * | 2015-01-10 | 2015-04-08 | 复旦大学 | 一步完成扩散、表面钝化和减反射的太阳电池制备方法 |
| CN110112243A (zh) * | 2019-06-02 | 2019-08-09 | 苏州腾晖光伏技术有限公司 | 太阳能电池的背面钝化结构及其制备方法 |
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| CN104505439A (zh) * | 2015-01-10 | 2015-04-08 | 复旦大学 | 一步完成扩散、表面钝化和减反射的太阳电池制备方法 |
| CN110112243A (zh) * | 2019-06-02 | 2019-08-09 | 苏州腾晖光伏技术有限公司 | 太阳能电池的背面钝化结构及其制备方法 |
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