CN113632225A - Semiconductor device having stone support structure, method for manufacturing the same, method for manufacturing support sheet, and laminated film for forming support sheet - Google Patents
Semiconductor device having stone support structure, method for manufacturing the same, method for manufacturing support sheet, and laminated film for forming support sheet Download PDFInfo
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- CN113632225A CN113632225A CN201980094030.4A CN201980094030A CN113632225A CN 113632225 A CN113632225 A CN 113632225A CN 201980094030 A CN201980094030 A CN 201980094030A CN 113632225 A CN113632225 A CN 113632225A
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Die Bonding (AREA)
- Dicing (AREA)
- Adhesive Tapes (AREA)
Abstract
The invention discloses a method for manufacturing a support sheet, which is used in the manufacturing process of a semiconductor device with a stone support structure, wherein the semiconductor device comprises: a substrate; a first chip disposed on the substrate; a plurality of support sheets arranged on the substrate and around the first chip; and a second chip supported by a plurality of support sheets and configured to cover the first chip, the support sheets being manufactured by a method comprising: (A) a step of preparing a laminated film which comprises a base film, a pressure-sensitive adhesive layer, and a support sheet-forming film having a multilayer structure including at least a metal layer in this order; (B) forming a plurality of support sheets on the surface of the pressure-sensitive adhesive layer by singulating the support sheet-forming film; and (C) picking up the support sheet from the pressure-sensitive adhesive layer.
Description
Technical Field
The present disclosure relates to a method for manufacturing a support sheet used in a process for manufacturing a semiconductor device having a stone substrate structure, the method including: a substrate; a first chip disposed on the substrate; a plurality of support sheets arranged on the substrate and around the first chip; and a second chip supported by the plurality of support sheets and configured to cover the first chip. The present disclosure also relates to a semiconductor device having a stone substrate structure, a method for manufacturing the same, and a laminated film for forming a support sheet. In addition, a stone tomb (dolmen) is a kind of stone tomb, and includes a plurality of columnar stones and a plate-like rock placed thereon. In a semiconductor device having a stone support structure, the support chip corresponds to a "pillar stone" and the second chip corresponds to a "plate-like stone".
Background
In recent years, in the field of semiconductor devices, high integration, miniaturization, and high speed have been demanded. As one mode of a semiconductor device, a structure in which a semiconductor chip is stacked on a controller chip disposed on a substrate has been attracting attention. For example, patent document 1 discloses a semiconductor die assembly including a controller die and a memory die supported on the controller die by a support member. The semiconductor device 100 shown in fig. 1A of patent document 1 may be said to have a stone tomb structure. That is, the semiconductor assembly 100 includes a package substrate 102, a controller die 103 disposed on a surface of the package substrate 102, a memory die 106a and a memory die 106b disposed over the controller die 103, and a support member 130a and a support member 130b supporting the memory die 106 a.
Prior art documents
Patent document
Patent document 1: japanese patent laid-open publication No. 2017-515306
Disclosure of Invention
Technical problem to be solved by the invention
(1) A step of attaching a back grind tape (back grind tape) to a semiconductor wafer;
(2) a step of back-grinding the semiconductor wafer;
(3) a step of attaching a film (dicing die-bonding integral film) having a pressure-sensitive adhesive layer and an adhesive layer to the dicing ring and the back-polished semiconductor wafer disposed therein;
(4) peeling the back side polishing tape from the semiconductor wafer;
(5) a step of singulating the semiconductor wafer;
(6) and picking up the support sheet including the laminated body of the semiconductor chip and the adhesive sheet from the pressure-sensitive adhesive layer.
According to the studies by the present inventors, it has been found that the step of manufacturing a support chip can be simplified in the manufacturing process of a semiconductor device having a structure of a support chip by using a material (for example, a resin material) other than a semiconductor chip. However, when the supporting sheet is picked up from the pressure-sensitive adhesive layer using an apparatus for manufacturing a general semiconductor chip (e.g., a die bonder or the like), the supporting sheet as a pickup object sometimes cannot be efficiently picked up. One of the reasons for this is as follows: prior to the step of picking up the support sheet from the pressure-sensitive adhesive layer, the visibility of the support sheet by a camera attached to an apparatus such as a die bonder is insufficient.
Accordingly, the present disclosure provides a method of manufacturing a support sheet, which efficiently manufactures a support sheet having excellent visibility by a camera. The present disclosure also provides a semiconductor device having a stone substrate structure, a method for manufacturing the same, and a laminated film for forming a support sheet.
Means for solving the technical problem
One aspect of the present disclosure relates to a method for manufacturing a support sheet used in a process for manufacturing a semiconductor device having a stone support structure. The method for manufacturing the support sheet includes the following steps.
(A) A step of preparing a laminated film which comprises a base film, a pressure-sensitive adhesive layer, and a support sheet-forming film having a multilayer structure including at least a metal layer in this order;
(B) forming a plurality of support sheets on the surface of the pressure-sensitive adhesive layer by singulating the support sheet-forming film; and
(C) and picking up the support sheet from the pressure-sensitive adhesive layer.
According to the method for manufacturing a support sheet of one aspect of the present disclosure, the support sheet can be obtained by singulating the support sheet-forming film. Thus, the process for producing the support chip can be simplified as compared with a conventional production method using, as the support chip, a semiconductor material piece obtained by dicing a semiconductor wafer. That is, the above-described steps (1) to (6) are required in the past, and since the support sheet forming film does not include a semiconductor wafer, the steps (1), (2), and (4) relating to back grinding of the semiconductor wafer can be omitted. Further, since a semiconductor wafer which is expensive compared to a resin material is not used, the cost can be reduced.
Further, according to the method for manufacturing a support sheet according to one aspect of the present disclosure, a support sheet having excellent visibility by a camera can be efficiently manufactured in the step of picking up the support sheet from the pressure-sensitive adhesive layer. The reason why the visibility by the camera is improved is considered to be, for example: when the film for forming a support sheet is formed into a single sheet, the optical contrast is improved by the metal material of the metal layer contained in the support sheet and the resin material of the pressure-sensitive adhesive layer.
The method for manufacturing a support sheet according to the present disclosure may include a step of recognizing the position of the support sheet with a camera between the step (B) and the step (C).
(A) The pressure-sensitive adhesive layer of the laminate film prepared in the process may be of a pressure-sensitive type or an ultraviolet-curable type. That is, the pressure-sensitive adhesive layer may be cured by irradiation with ultraviolet rays or may not be cured by irradiation with ultraviolet rays, in other words, may or may not contain a resin having a photoreactive carbon-carbon double bond. In addition, the pressure-sensitive adhesive layer of the pressure-sensitive type may also contain a resin having a carbon-carbon double bond having photoreactivity. For example, the pressure-sensitive adhesive layer may be formed by irradiating a predetermined region thereof with ultraviolet rays to reduce the tackiness of the region, and for example, a resin having a photoreactive carbon-carbon double bond may remain. When the pressure-sensitive adhesive layer is of an ultraviolet-curable type, the tackiness of the pressure-sensitive adhesive layer can be reduced by performing a step of irradiating the pressure-sensitive adhesive layer with ultraviolet light between the step (B) and the step (C).
One aspect of the present disclosure relates to a method of manufacturing a semiconductor device having a stone tomb structure, the semiconductor device having the stone tomb structure including: a substrate; a first chip disposed on the substrate; a plurality of support sheets arranged on the substrate and around the first chip; and a second chip supported by the plurality of support sheets and configured to cover the first chip. The method for manufacturing a semiconductor device includes the following steps.
(D) Disposing a first chip on a substrate;
(E) a step of disposing a plurality of support pieces obtained by the manufacturing method on a substrate and around a first chip;
(F) preparing a chip with an adhesive sheet, the chip having a second chip and an adhesive sheet provided on one surface of the second chip; and
(G) and a step of constructing a stone tomb structure by arranging chips with adhesive sheets on the surfaces of the plurality of support sheets.
When the film for forming a support sheet contains a thermosetting resin layer, the step of heating the film for forming a support sheet or the support sheet to cure the thermosetting resin layer or the adhesive sheet may be performed at an appropriate timing, for example, before the step (G). At the stage of arranging the chips with the adhesive sheet in contact with the surfaces of the plurality of support sheets, the thermosetting resin layer has been cured, whereby the support sheets can be suppressed from being deformed with the arrangement of the chips with the adhesive sheet. In addition, since the thermosetting resin layer has adhesiveness with respect to other members (e.g., a substrate), an adhesive layer or the like may not be provided on the support sheet.
One aspect of the present disclosure is directed to a semiconductor device having a stone tomb structure. Namely, the semiconductor device includes: a substrate; a first chip disposed on the substrate; a plurality of support sheets arranged on the substrate and around the first chip; and a second chip supported by a plurality of support sheets and configured to cover the first chip, and the support sheets include at least a metal sheet.
The semiconductor device according to the present disclosure may further include an adhesive sheet disposed on one face of the second chip and sandwiched by the second chip and the plurality of support sheets. In this case, the first chip may be separated from the adhesive sheet or may be in contact with the adhesive sheet.
One aspect of the present disclosure relates to a laminated film for supporting a chip formation, which is used in a manufacturing process of a semiconductor device having a stone tomb structure, the semiconductor device having the stone tomb structure including: a substrate; a first chip disposed on the substrate; a plurality of support sheets arranged on the substrate and around the first chip; and a second chip supported by the plurality of support sheets and configured to cover the first chip. The laminated film for forming a support sheet comprises a base film, a pressure-sensitive adhesive layer, and a film for forming a support sheet having a multilayer structure including at least a metal layer in this order.
The support sheet-forming film may have a thickness of, for example, 5 to 180 μm or 20 to 120 μm. By setting the thickness of the support sheet forming film within this range, a stone tomb structure having an appropriate height with respect to the first chip (for example, the controller chip) can be constructed. The support sheet-forming film may contain a thermosetting resin layer. The thermosetting resin layer contains, for example, an epoxy resin, and preferably contains an elastomer. The thermosetting resin layer constituting the support sheet contains an elastomer, and thus stress in the semiconductor device can be relaxed.
One aspect of the present disclosure relates to a method for manufacturing a laminated film for supporting sheet formation. The method for manufacturing the laminated film for supporting sheet formation includes: a step of preparing a pressure-sensitive adhesive film including a base film and a pressure-sensitive adhesive layer formed on one surface of the base film; and a step of laminating a support sheet-forming film having a multilayer structure including at least a metal layer on the surface of the pressure-sensitive adhesive layer.
Effects of the invention
According to the present disclosure, a method of manufacturing a support sheet is provided, which efficiently manufactures a support sheet excellent in visibility by a camera. Further, according to the present disclosure, a semiconductor device having a stone substrate structure, a method for manufacturing the same, and a laminated film for supporting sheet formation are provided.
Drawings
Fig. 1 is a cross-sectional view schematically showing a first embodiment of a semiconductor device.
Fig. 2 (a), (b), and (c) are plan views schematically showing examples of the positional relationship between the first chip and the plurality of support pieces.
Fig. 3 (a) is a plan view schematically showing an embodiment of the laminated film for forming a support sheet, and fig. 3 (b) is a cross-sectional view taken along the line b-b in fig. 3 (a).
Fig. 4 is a cross-sectional view schematically showing a step of bonding the pressure-sensitive adhesive layer and the support sheet-forming film.
Fig. 5 (a), (b), (c), and (d) are cross-sectional views schematically showing an embodiment of the method for manufacturing the support sheet.
Fig. 6 (a) is a plan view schematically showing an embodiment of the support sheet forming film after singulation, and fig. 6 (b) is an enlarged view of a portion E of fig. 6 (a).
Fig. 7 is a cross-sectional view schematically showing a state in which a plurality of support pieces are arranged around a first chip on a substrate.
Fig. 8 is a cross-sectional view schematically showing an example of a chip with an adhesive sheet.
Fig. 9 is a cross-sectional view schematically showing a stone tomb structure formed on a substrate.
Fig. 10 is a cross-sectional view schematically showing a second embodiment of the semiconductor device.
Fig. 11 is a cross-sectional view schematically showing another embodiment of the laminated film for forming a support sheet.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The present invention is not limited to the following embodiments. In the present specification, "(meth) acrylic acid" means acrylic acid or methacrylic acid, and "(meth) acrylate" means acrylate or methacrylate corresponding thereto. The term "a or B" may include both of a and B as long as both of a and B are included.
In the present specification, the term "layer" includes a structure having a partially formed shape in addition to a structure having a shape formed on the entire surface when viewed in a plan view. In the present specification, the term "step" is not limited to an independent step, and is also included in the term as long as the intended function of the step is achieved even when the step cannot be clearly distinguished from other steps. The numerical range represented by the term "to" represents a range including the numerical values described before and after the term "to" as the minimum value and the maximum value, respectively.
In the present specification, the content of each component in the composition refers to the total amount of a plurality of substances present in the composition, unless otherwise specified, when a plurality of substances corresponding to each component are present in the composition. The exemplary materials may be used alone or in combination of two or more unless otherwise specified. In addition, in the numerical ranges recited in the present specification, the upper limit value or the lower limit value of a numerical range in a certain stage may be replaced with the upper limit value or the lower limit value of a numerical range in another stage. In the numerical ranges described in the present specification, the upper limit or the lower limit of the numerical range may be replaced with the values shown in the examples.
< first embodiment >
(semiconductor device)
Fig. 1 is a cross-sectional view schematically showing a first embodiment of a semiconductor device. The semiconductor device 100 shown in fig. 1 includes: a substrate 10, a chip T1 (first chip) disposed on a surface of the substrate 10, a plurality of support pieces Dc disposed on the surface of the substrate 10 and around the chip T1, a chip T2 (second chip) disposed above the chip T1, an adhesive sheet Tc sandwiched between the chip T2 and the plurality of support pieces Dc, a chip T3 and a chip T4 stacked on the chip T2, and a plurality of leads w electrically connecting electrodes (not shown) on the surface of the substrate 10 and the chips T1 to T4, respectively; and a sealing material 50 filled in a gap or the like between the chip T1 and the chip T2.
In the present embodiment, the stone tomb structure is formed on the substrate 10 by the plurality of support sheets Dc, the chip T2, and the adhesive sheet Tc located between the support sheets Dc and the chip T2. The chip T1 is separated from the adhesive sheet Tc. By appropriately setting the thickness of the support piece Dc, a space for connecting the upper surface of the chip T1 and the lead w of the substrate 10 can be secured.
The substrate 10 may be an organic substrate or a metal substrate such as a lead frame. In the substrate 10, the thickness of the substrate 10 may be, for example, 90 to 300 μm, or 90 to 210 μm, from the viewpoint of suppressing warpage of the semiconductor device 100.
The chip T1 is, for example, a controller chip, and is bonded to the substrate 10 by the adhesive sheet Tc and electrically connected to the substrate 10 by the wires w. The chip T1 has a rectangular shape (square or rectangular shape) in plan view, for example. The length of one side of the chip T1 is, for example, 5mm or less, and may be 2mm to 5mm or 1mm to 5 mm. The thickness of the chip T1 may be, for example, 10 μm to 150 μm, or 20 μm to 100 μm.
The chip T2 is, for example, a memory chip, and is bonded to the support sheet Dc via the adhesive sheet Tc. The chip T2 has a size larger than the chip T1 in a plan view. The chip T2 has a rectangular shape (square or rectangular shape) in plan view, for example. The length of one side of the chip T2 is, for example, 20mm or less, and may be 4mm to 20mm or 4mm to 12 mm. The thickness of the chip T2 is, for example, 10 μm to 170 μm, or 20 μm to 120 μm. The chip T3 and the chip T4 are also memory chips, for example, and are bonded to the chip T2 via an adhesive sheet Tc. The length of one side of the chip T3 or the chip T4 may be the same as that of the chip T2, and the thicknesses of the chip T3 and the chip T4 may be the same as that of the chip T2.
The support sheet Dc functions as a spacer for forming a space around the chip T1. The support sheet Dc includes a metal sheet 6 p. The support sheet Dc is composed of two adhesive sheets 5c and a metal sheet 6p sandwiched between the two adhesive sheets 5 c. The adhesive sheet 5c contains a cured product of a thermosetting resin composition (adhesive sheet 5 p). The metal sheet 6p contains a metal material (e.g., copper, nickel, titanium, stainless steel, aluminum, etc.). As shown in fig. 2a, two support pieces Dc (rectangular in shape) may be disposed at positions spaced apart on both sides of the chip T1, or as shown in fig. 2 b, one support piece Dc (square in shape, 4 in total) may be disposed at positions corresponding to the corners of the chip T1, or as shown in fig. 2 c, one support piece Dc (rectangular in shape, 4 in total) may be disposed at positions corresponding to the sides of the chip T1. The length of one side of the support piece Dc in plan view is, for example, 20mm or less, and may be 1mm to 20mm or 1mm to 12 mm. The thickness (height) of the support sheet Dc may be, for example, 10 to 180 μm, or 20 to 120 μm.
(method of manufacturing support sheet)
An example of the method for producing the support sheet will be described. The production method of the present embodiment includes the following steps (a) to (C).
(A) A step of preparing a support sheet-forming laminate film 20 (hereinafter, may be referred to as "laminate film 20"), the support sheet-forming laminate film 20 including, in this order, a base material film 1, a pressure-sensitive adhesive layer 2, and a support sheet-forming film D having a multilayer structure including at least a metal layer 6 (see fig. 3 and 4);
(B) a step of forming a plurality of support pieces Da on the surface of the pressure-sensitive adhesive layer 2 by singulating the support piece-forming film D (see fig. 5 (b)); and
(C) a step of picking up the supporting sheet Da from the pressure-sensitive adhesive layer 2 (refer to (d) of fig. 5).
The support sheet Dc shown in fig. 1 is a support sheet obtained by curing the adhesive sheet (thermosetting resin composition) contained therein. On the other hand, the support sheet Da is a support sheet in a state before the adhesive sheet (thermosetting resin composition) contained therein is completely cured (for example, see fig. 5 (b)).
(A) The steps (a) to (C) are processes for manufacturing the plurality of support pieces Da. The steps (a) to (C) will be described below with reference to fig. 3 to 5.
[ (A) Process ]
(A) The step is a step of preparing the laminated film 20. The laminate film 20 includes a base film 1, a pressure-sensitive adhesive layer 2, and a support sheet-forming film D having a multilayer structure including at least a metal layer 6. The substrate film 1 is, for example, a polyethylene terephthalate (pet) film. The pressure-sensitive adhesive layer 2 is formed into a circular shape by punching or the like (refer to (a) of fig. 3). The pressure-sensitive adhesive layer 2 may contain a pressure-sensitive adhesive of pressure-sensitive type, and may also contain a pressure-sensitive adhesive of ultraviolet-curable type. In the case where the pressure-sensitive adhesive layer 2 is a pressure-sensitive adhesive containing an ultraviolet-curable pressure-sensitive adhesive, the pressure-sensitive adhesive layer 2 has a property of decreasing the adhesive property by irradiation of ultraviolet rays. The support sheet-forming film D is formed in a circular shape by punching or the like and has a diameter smaller than that of the pressure-sensitive adhesive layer 2 (see fig. 3 (a)). The support sheet forming film D is composed of two thermosetting resin layers 5 and a metal layer 6 sandwiched between the two thermosetting resin layers 5.
The thickness of the thermosetting resin layer 5 is, for example, 3 to 60 μm, or 5 to 40 μm or 10 to 30 μm. The thickness of the two thermosetting resin layers 5 may be the same or different. The thermosetting resin layer 5 contains a thermosetting resin composition. The thermosetting resin composition is in a state of being semi-cured (B stage), and can be in a state of being completely cured (C stage) by a subsequent curing treatment. The thermosetting resin composition contains an epoxy resin, a curing agent, an elastomer (for example, an acrylic resin), and further contains an inorganic filler, a curing accelerator, and the like as required. The composition of the two thermosetting resin layers 5 may be the same or different. Details of the thermosetting resin composition constituting the thermosetting resin layer 5 will be described later.
The thickness of the metal layer 6 is, for example, 5 μm to 100 μm, or 10 μm to 90 μm or 20 μm to 80 μm. When the thickness of the metal layer 6 is within the above range, the metal sheet 6p functions as a spring plate in the step of picking up the support piece Da (see fig. 5 d), and excellent pick-up performance can be achieved. Examples of the metal layer 6 include a copper layer, a nickel layer, a titanium layer, a stainless steel layer, and an aluminum layer. The metal layer 6 may be a copper layer. Since the laminate film 20 includes the metal layer 6, the camera visibility of the support piece Da can be improved in the pickup step by utilizing the optical contrast between the resin material and the metal material. Further, since the thermal conductivity of metal such as copper or aluminum tends to be larger than that of silicon constituting the semiconductor chip, the heat dissipation of the semiconductor device manufactured using the support piece Da having the metal layer 6 is presumed to be excellent.
The thickness of the laminate film 20 may be, for example, 5 μm to 180 μm or 20 μm to 120 μm. By setting the thickness of the laminated film 20 within this range, a stone tomb structure having an appropriate height with respect to the first chip (e.g., controller chip) can be constructed.
The laminate film 20 can be produced, for example, by laminating a first laminate film having the base film 1 and the pressure-sensitive adhesive layer 2 on the surface of the base film 1 and a second laminate film having the cover film 3 and the support sheet-forming film D on the surface of the cover film 3 (refer to fig. 4). The first laminated film can be obtained by a step of forming a pressure-sensitive adhesive layer on the surface of the base film 1 by coating and a step of processing the pressure-sensitive adhesive layer into a predetermined shape (for example, a circular shape) by punching or the like. The second laminate film can be obtained by a process of forming the thermosetting resin layer 5 by coating on the surface of the cover film 3 (for example, a PET film or a polyethylene film), a process of forming the metal layer 6 on the surface of the thermosetting resin layer 5, a process of forming the thermosetting resin layer 5 by coating on the surface of the metal layer 6, and a process of processing the support sheet-forming film formed by these processes into a predetermined shape (for example, a circular shape) by punching or the like. When the laminate film 20 is used, the cover film 3 is peeled off at an appropriate timing.
[ (B) Process ]
(B) The step is a step of forming a plurality of support sheets Da on the surface of the pressure-sensitive adhesive layer 2 by singulating the support sheet forming film D. As shown in fig. 5 (a), the dicing ring DR is attached to the laminate film 20. That is, the dicing ring DR is attached to the pressure-sensitive adhesive layer 2 of the laminate film 20, and the support sheet forming film D is disposed inside the dicing ring DR. The support sheet-forming film D is singulated by dicing (see fig. 5 (b)). Thereby, a plurality of support pieces Da can be obtained from the support piece forming film D. The support sheet Da is composed of two adhesive sheets 5p and a metal sheet 6p sandwiched by the two adhesive sheets 5 p.
[ (C procedure ]
(C) The step is a step of picking up the support sheet Da from the pressure-sensitive adhesive layer 2. As shown in fig. 5 (c), the support pieces Da are separated from each other by expanding the base material film 1. Next, as shown in fig. 5 (d), the supporting sheet Da is peeled from the pressure-sensitive adhesive layer 2 by pushing up the supporting sheet Da with the push-up jig 42, and is picked up by suction with the suction chuck 44.
Fig. 6 (a) is a plan view schematically showing an embodiment of the support sheet forming film after singulation, and fig. 6 (b) is an enlarged view of a portion E of fig. 6 (a). In the present specification, the phrase "visibility by a camera" refers to the ease of confirmation of the support sheet Da with respect to the pressure-sensitive adhesive layer 2 when the support sheet forming film after singulation is observed by a camera attached to an apparatus (e.g., a die bonder) used in general semiconductor chip manufacturing. The ease of this confirmation can be enhanced, for example, by increasing (enlarging) the optical contrast of the pressure-sensitive adhesive layer 2 and the support sheet Da.
The method for manufacturing a support sheet according to the present embodiment may include a step of recognizing the position of the support sheet with a camera between the step (B) and the step (C).
According to the method for manufacturing the support sheet of the present embodiment, since the laminate film 20 includes the metal layer 6, the optical contrast between the resin material and the metal material becomes higher, the camera visibility of the support sheet Da is improved, and the support sheet Da can be picked up more efficiently.
(method of manufacturing semiconductor device)
A method for manufacturing the semiconductor device 100 will be described. The production method of the present embodiment includes the following steps (D) to (H).
(D) Disposing a first chip T1 on the substrate 10;
(E) a step of disposing the plurality of support pieces Da (the support pieces Da including at least the metal piece 6 p) obtained by the above-described manufacturing method on the substrate 10 and around the first chip T1 (see fig. 7);
(F) a step of preparing a chip T2a with an adhesive sheet, the chip T2a with an adhesive sheet including a second chip T2 and an adhesive sheet Ta provided on one surface of the second chip T2 (see fig. 8);
(G) a step of constructing a stone tomb structure by disposing chips T2a with adhesive sheets on the surfaces of the plurality of support sheets Dc (see fig. 9);
(H) and a step of sealing the gap between the chip T1 and the chip T2 with the sealing material 50 (see fig. 1).
(D) The steps (i) to (H) are processes for constructing a stone tomb structure on the substrate 10 using a plurality of support pieces Da. Hereinafter, the steps (D) to (H) will be described with reference to fig. 7 to 9.
[ (D) Process ]
(D) The step is a step of disposing the first chip T1 on the substrate 10. For example, first, the chip T1 is disposed at a predetermined position on the substrate 10 via the adhesive layer T1 c. Then, the chip T1 is electrically connected to the substrate 10 through the wire w.
[ (E) Process ]
(E) The step is a step of disposing a plurality of support pieces Da on the substrate 10 and around the first chip T1. The structure 30 shown in fig. 7 was produced through the above-described steps. The structure 30 includes a substrate 10, a chip T1 disposed on a surface of the substrate 10, and a plurality of support pieces Da. The support piece Da may be arranged by a pressure bonding process. The pressure bonding treatment is preferably carried out, for example, at 80 to 180 ℃ and 0.01 to 0.50MPa for 0.5 to 3.0 seconds. The adhesive sheet 5p included in the support sheet Da may be completely cured at the time of the step (E) to be the support sheet Dc, or may not be completely cured at that time. The adhesive sheet 5p included in the support sheet Da is preferably completely cured at a time before the start of the (G) step to become the adhesive sheet 5 c.
[ (F) Process ]
(F) The step is a step of preparing the adhesive sheet-attached chip T2a shown in fig. 8. The chip with adhesive sheet T2a includes a chip T2, and an adhesive sheet Ta provided on one surface of the chip T2. The adhesive sheet-attached chip T2a can be obtained by, for example, performing a dicing step and a picking up step using a semiconductor wafer and a dicing die-bonding integral film.
[ (G) Process ]
(G) The step is a step of disposing the chip T2a with an adhesive sheet above the chip T1 so that the adhesive sheet Ta is in contact with the upper surfaces of the plurality of support sheets Dc. Specifically, the chip T2 is pressure-bonded to the upper surface of the support sheet Dc via the adhesive sheet Ta. The pressure bonding treatment is preferably carried out, for example, at 80 to 180 ℃ and 0.01 to 0.50MPa for 0.5 to 3.0 seconds. Subsequently, the adhesive sheet Ta is cured by heating. The curing treatment is preferably carried out, for example, at 60 to 175 ℃ and 0.01 to 1.0MPa for 5 minutes or longer. Thereby, the adhesive sheet Ta is cured to become an adhesive sheet Tc. Through this process, a stone tomb structure is constructed on the substrate 10 (see fig. 9).
After the step (G) and before the step (H), the chip T3 is placed on the chip T2 via an adhesive sheet, and further, the chip T4 is placed on the chip T3 via an adhesive sheet. The adhesive sheet may be a thermosetting resin composition similar to the adhesive sheet Ta, and is cured by heating to become an adhesive sheet Tc (see fig. 1). On the other hand, the chip T2, the chip T3, and the chip T4 are electrically connected to the substrate 10 by wires w, respectively. The number of chips stacked above the chip T1 is not limited to three in the present embodiment, and may be set as appropriate.
[ (H) Process ]
(H) The step is a step of sealing the gap between the chip T1 and the chip T2 with the sealing material 50. Through this process, the semiconductor device 100 shown in fig. 1 is completed.
(thermosetting resin composition)
As described above, the thermosetting resin composition constituting the thermosetting resin layer 5 contains an epoxy resin, a curing agent, and an elastomer, and further contains an inorganic filler, a curing accelerator, and the like as necessary. According to the study by the present inventors, it is preferable that the support sheet Da and the support sheet Dc after curing have the following characteristics.
Characteristic 1: the adhesive sheet 5p is less likely to be displaced when the supporting sheet Da is thermocompression bonded at a predetermined position of the substrate 10 (the melt viscosity (shear viscosity) at 120 ℃ is, for example, 4300Pa · s to 50000Pa · s or 5000Pa · s to 40000Pa · s);
characteristic 2: the adhesive sheet 5c exhibits stress relaxation properties (the thermosetting resin composition contains an elastomer (rubber component)) in the semiconductor device 100;
characteristic 3: the adhesive strength with the adhesive sheet Tc of the chip with the adhesive sheet is sufficiently high (the adhesive sheet 5c (i.e., the cured product of the film comprising the thermosetting resin layer) has a die shear strength (shear strength) with respect to the adhesive sheet Tc of, for example, 2.0Mpa to 7.0Mpa or 3.0Mpa to 6.0 Mpa);
characteristic 4: the shrinkage rate accompanying curing is sufficiently small;
characteristic 5: the camera-mounted sheet Da has good visibility in the pickup step (the thermosetting resin composition contains, for example, a colorant);
property 6: the adhesive sheet 5c has sufficient mechanical strength.
[ epoxy resin ]
The epoxy resin is not particularly limited as long as it is a substance that has an adhesive effect by curing. It is possible to use: difunctional epoxy resins such as bisphenol a type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin and the like; and novolac epoxy resins such as phenol novolac epoxy resins and cresol novolac epoxy resins. Further, commonly known resins such as polyfunctional epoxy resins, glycidyl amine type epoxy resins, heterocyclic ring-containing epoxy resins, alicyclic epoxy resins, and the like can be used. These may be used alone or in combination of two or more.
[ curing agent ]
Examples of the curing agent include phenol resins, ester compounds, aromatic amines, aliphatic amines, and acid anhydrides. Among them, a phenol resin is preferable from the viewpoint of achieving a high grain shear strength (shear strength). Examples of commercially available phenol resins include: LF-4871 (trade name, BPA novolac type phenol resin) manufactured by DIC Corporation, HE-100C-30 (trade name, phenylaralkyl type phenol resin) manufactured by AIR WATER INC, Phenolite KA and TD series manufactured by DIC Corporation, Milex XLC-series and XL series (e.g., MilexX LC-LL) manufactured by Mitsui Chemicals, HE series (e.g., HE100C-30) manufactured by AIR WATER INC, MEHC-7800 series (e.g., MEHC-7800-4S) manufactured by Ltd, JDPP series manufactured by JEF Chemical Corporation, Gun Ei Chemical Industry Co., Ltd, PSM series (e.g., PSM-4326) manufactured by Ltd, and the like. These may be used alone or in combination of two or more.
The blending amount of the epoxy resin and the phenol resin is preferably 0.6 to 1.5, more preferably 0.7 to 1.4, and still more preferably 0.8 to 1.3 in terms of equivalent ratio of epoxy equivalent to hydroxyl equivalent, respectively, from the viewpoint of achieving high grain shear strength (shear strength). When the blending ratio is within the above range, both the curability and the fluidity can be easily brought to a sufficiently high level.
[ Elastomers ]
Examples of the elastomer include: acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, polybutadiene, acrylonitrile, epoxy-modified polybutadiene, maleic anhydride-modified polybutadiene, phenol-modified polybutadiene, carboxyl-modified acrylonitrile.
From the viewpoint of achieving high grain shear strength (shear strength), the elastomer is preferably an acrylic resin, and more preferably an acrylic resin such as an epoxy group-containing (meth) acrylic copolymer obtained by polymerizing a functional monomer having an epoxy group or a glycidyl group as a crosslinkable functional group, such as glycidyl acrylate or glycidyl methacrylate. Among the acrylic resins, epoxy group-containing (meth) acrylate copolymers and epoxy group-containing acrylic rubbers are preferable, and epoxy group-containing acrylic rubbers are more preferable. The epoxy group-containing acrylic rubber is a rubber having an epoxy group and mainly contains a copolymer of butyl acrylate and acrylonitrile, or a copolymer of ethyl acrylate and acrylonitrile. The acrylic resin may have not only an epoxy group but also a crosslinkable functional group such as an alcoholic or phenolic hydroxyl group or a carboxyl group.
Examples of commercially available products of acrylic resins include: SG-70L, SG-708-6, WS-023EK30, SG-280EK23 and SG-P3 solvent modification (trade name, acrylic rubber, weight average molecular weight: 80 ten thousand, Tg: 12 ℃, solvent is cyclohexanone) manufactured by Nagase ChemteX Corporation, and the like.
From the viewpoint of achieving high grain shear strength (shear strength), the glass transition temperature (Tg) of the acrylic resin is preferably from-50 ℃ to 50 ℃, more preferably from-30 ℃ to 30 ℃. From the viewpoint of achieving high grain shear strength (shear strength), the weight average molecular weight (Mw) of the acrylic resin is preferably 10 to 300 ten thousand, and more preferably 50 to 200 ten thousand. Here, Mw is a value obtained by conversion using a standard curve based on standard polystyrene, measured by Gel Permeation Chromatography (GPC). Further, by using an acrylic resin having a narrow molecular weight distribution, a highly elastic adhesive sheet tends to be formed.
From the viewpoint of achieving high grain shear strength (shear strength), the amount of the acrylic resin contained in the thermosetting resin composition is preferably 10 to 200 parts by mass, more preferably 20 to 100 parts by mass, relative to 100 parts by mass of the total of the epoxy resin and the epoxy resin curing agent.
[ inorganic Filler ]
Examples of the inorganic filler include: aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, amorphous silica, and the like. These may be used alone or in combination of two or more.
From the viewpoint of achieving high grain shear strength (shear strength), the average particle diameter of the inorganic filler is preferably 0.005 μm to 1.0 μm, and more preferably 0.05 μm to 0.5 μm. From the viewpoint of achieving high grain shear strength (shear strength), the surface of the inorganic filler is preferably chemically modified. Examples of the material for chemically modifying the surface include a silane coupling agent. Examples of the functional group of the silane coupling agent include a vinyl group, an acryloyl group, an epoxy group, a mercapto group, an amino group, a diamino group, an alkoxy group, and an ethoxy group.
From the viewpoint of achieving high grain shear strength (shear strength), the content of the inorganic filler is preferably 20 to 200 parts by mass, and more preferably 30 to 100 parts by mass, relative to 100 parts by mass of the resin component of the thermosetting resin composition.
[ curing accelerators ]
Examples of the curing accelerator include: imidazoles and derivatives thereof, organophosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts and the like. From the viewpoint of achieving high grain shear strength (shear strength), imidazole-based compounds are preferred. Examples of the imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole. These may be used alone or in combination of two or more.
From the viewpoint of achieving high grain shear strength (shear strength), the content of the curing accelerator in the thermosetting resin composition is preferably 0.04 to 3 parts by mass, and more preferably 0.04 to 0.2 parts by mass, based on 100 parts by mass of the total of the epoxy resin and the epoxy resin curing agent.
< second embodiment >
Fig. 10 is a cross-sectional view schematically showing a second embodiment of the semiconductor device. While the semiconductor device 100 according to the first embodiment is in a state in which the chip T1 is separated from the adhesive sheet Tc, the chip T1 is in contact with the adhesive sheet Tc in the semiconductor device 200 according to the present embodiment. That is, the adhesive sheet Tc is in contact with the upper surface of the chip T1 and the upper surface of the support sheet Dc. For example, by appropriately setting the thickness of the support sheet-forming film D, the position of the upper surface of the chip T1 can be matched with the position of the upper surface of the support sheet Dc.
In the semiconductor device 200, the chip T1 is connected to the substrate 10 not by wire bonding but by flip chip (flip chip). Further, if the chip T1 is embedded in the adhesive sheet Ta constituting the adhesive sheet-attached chip T2a together with the chip T2, the chip T1 can be in contact with the adhesive sheet Tc even in a state where the chip T1 is wire-bonded to the substrate 10.
While the embodiments of the present disclosure have been described in detail, the present disclosure is not limited to the embodiments.
In the above embodiment, as shown in fig. 3 (b), the support sheet forming laminate film 20 including the support sheet forming film D having a three-layer structure is exemplified, but the support sheet forming laminate film may have two layers or four or more layers. The support sheet-forming laminate film 20A shown in fig. 11 includes a two-layer film D2 (support sheet-forming film) having the thermosetting resin layer 5 and the metal layer 6. That is, in the support sheet-forming laminate film 20A, the thermosetting resin layer 5 is disposed between the pressure-sensitive adhesive layer 2 and the outermost metal layer 6.
The support sheet-forming laminate film 20A can be produced, for example, through the following steps.
A step of preparing a laminated film including the base film 1, the pressure-sensitive adhesive layer 2, and the thermosetting resin layer 5 in this order;
a step of bonding a metal layer 6 to the surface of the laminate film.
Industrial applicability
According to the present disclosure, there is provided a method of manufacturing a support sheet, which can improve the visibility of a camera with respect to the support sheet as a pickup target in a process of picking up the support sheet from a pressure-sensitive adhesive layer. Further, according to the present disclosure, a semiconductor device having a stone substrate structure and a method for manufacturing the same, and a laminated film for forming a support sheet and a method for manufacturing the same are provided.
Description of the symbols
1-substrate film, 2-pressure-sensitive adhesive layer, 5-thermosetting resin layer, 5 c-adhesive sheet (cured), 5 p-adhesive sheet, 6-metal layer, 6 p-metal sheet, 10-substrate, 20A-laminated film for support sheet formation, 50-sealing material, 100, 200-semiconductor device, film for D-support sheet formation, D2-two-layer film (film for support sheet formation), Da, Dc-support sheet, T1-first chip, T2-second chip, T2 a-chip with adhesive sheet, Ta, Tc-adhesive sheet.
Claims (7)
1. A method for manufacturing a support sheet used in a process for manufacturing a semiconductor device having a stone support structure, the semiconductor device comprising: a substrate; a first chip disposed on the substrate; a plurality of support pieces disposed on the substrate and around the first chip; and a second chip supported by the plurality of support sheets and configured to cover the first chip, the method of manufacturing the support sheets including:
(A) a step of preparing a laminated film which comprises a base film, a pressure-sensitive adhesive layer, and a support sheet-forming film having a multilayer structure including at least a metal layer in this order;
(B) forming a plurality of support sheets on the surface of the pressure-sensitive adhesive layer by singulating the support sheet-forming film; and
(C) and picking up the support sheet from the pressure-sensitive adhesive layer.
2. The method for manufacturing a support sheet according to claim 1, wherein the method includes a step of recognizing the position of the support sheet with a camera between the steps (B) and (C).
3. A method for manufacturing a semiconductor device having a stone substrate structure, the method comprising: a substrate; a first chip disposed on the substrate; a plurality of support pieces disposed on the substrate and around the first chip; and a second chip supported by the plurality of support sheets and configured to cover the first chip, the method of manufacturing the semiconductor device including:
(D) disposing a first chip on a substrate;
(E) disposing a plurality of support pieces obtained by the manufacturing method according to claim 1 or 2 on the substrate and around the first chip;
(F) preparing a chip with an adhesive sheet, the chip having a second chip and an adhesive sheet provided on one surface of the second chip; and
(G) and a step of constructing a stone tomb structure by arranging the chips with the adhesive sheet on the surfaces of the plurality of support sheets.
4. The method for manufacturing a semiconductor device according to claim 3,
the support sheet-forming film comprises a thermosetting resin layer,
the method for manufacturing a semiconductor device includes, before the step (G), a step of heating the support sheet-forming film or the support sheet.
5. A semiconductor device having a stone tomb structure, comprising:
a substrate;
a first chip disposed on the substrate;
a plurality of support pieces arranged on the substrate and around the first chip; and
a second chip supported by the plurality of support sheets and configured to cover the first chip,
the support sheet at least comprises a metal sheet.
6. A laminated film for supporting sheet formation, which is used in a process for manufacturing a semiconductor device having a stone support structure, the semiconductor device comprising: a substrate; a first chip disposed on the substrate; a plurality of support pieces disposed on the substrate and around the first chip; and a second chip supported by the plurality of support sheets and arranged to cover the first chip, the support sheet-forming laminated film including, in order:
a substrate film;
a pressure sensitive adhesive layer; and
the support sheet-forming film has a multilayer structure including at least a metal layer.
7. The laminate film for forming a support sheet according to claim 6, wherein,
the support sheet-forming film includes a thermosetting resin layer.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2019/017689 WO2020217395A1 (en) | 2019-04-25 | 2019-04-25 | Semiconductor device having dolmen structure and method for manufacturing same, method for manufacturing support piece, and laminate film for support piece formation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113632225A true CN113632225A (en) | 2021-11-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980094030.4A Pending CN113632225A (en) | 2019-04-25 | 2019-04-25 | Semiconductor device having stone support structure, method for manufacturing the same, method for manufacturing support sheet, and laminated film for forming support sheet |
Country Status (5)
| Country | Link |
|---|---|
| JP (2) | JP7351335B2 (en) |
| KR (1) | KR20210146898A (en) |
| CN (1) | CN113632225A (en) |
| TW (1) | TW202107666A (en) |
| WO (1) | WO2020217395A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11688662B2 (en) * | 2021-08-27 | 2023-06-27 | Micron Technology, Inc. | Thermal distribution network for semiconductor devices and associated systems and methods |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002222889A (en) * | 2001-01-24 | 2002-08-09 | Nec Kyushu Ltd | Semiconductor device and method of manufacturing the same |
| KR20030018204A (en) * | 2001-08-27 | 2003-03-06 | 삼성전자주식회사 | Multi chip package having spacer |
| US6930378B1 (en) * | 2003-11-10 | 2005-08-16 | Amkor Technology, Inc. | Stacked semiconductor die assembly having at least one support |
| JP4188337B2 (en) * | 2004-05-20 | 2008-11-26 | 株式会社東芝 | Manufacturing method of multilayer electronic component |
| TWI292617B (en) * | 2006-02-03 | 2008-01-11 | Siliconware Precision Industries Co Ltd | Stacked semiconductor structure and fabrication method thereof |
| US20080029885A1 (en) * | 2006-08-07 | 2008-02-07 | Sandisk Il Ltd. | Inverted Pyramid Multi-Die Package Reducing Wire Sweep And Weakening Torques |
| JP5840479B2 (en) * | 2011-12-20 | 2016-01-06 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
| KR101906269B1 (en) * | 2012-04-17 | 2018-10-10 | 삼성전자 주식회사 | Semiconductor package and method of fabricating the same |
| JP2015176906A (en) * | 2014-03-13 | 2015-10-05 | 株式会社東芝 | Semiconductor device and method of manufacturing the same |
| US9418974B2 (en) * | 2014-04-29 | 2016-08-16 | Micron Technology, Inc. | Stacked semiconductor die assemblies with support members and associated systems and methods |
-
2019
- 2019-04-25 CN CN201980094030.4A patent/CN113632225A/en active Pending
- 2019-04-25 WO PCT/JP2019/017689 patent/WO2020217395A1/en active Application Filing
- 2019-04-25 JP JP2021515416A patent/JP7351335B2/en active Active
- 2019-04-25 KR KR1020217029075A patent/KR20210146898A/en not_active Application Discontinuation
-
2020
- 2020-04-17 TW TW109113059A patent/TW202107666A/en unknown
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| JPWO2020217395A1 (en) | 2020-10-29 |
| JP2023115060A (en) | 2023-08-18 |
| TW202107666A (en) | 2021-02-16 |
| JP7351335B2 (en) | 2023-09-27 |
| KR20210146898A (en) | 2021-12-06 |
| WO2020217395A1 (en) | 2020-10-29 |
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