CN113594056A - Detection method of thin film - Google Patents
Detection method of thin film Download PDFInfo
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- CN113594056A CN113594056A CN202110870592.2A CN202110870592A CN113594056A CN 113594056 A CN113594056 A CN 113594056A CN 202110870592 A CN202110870592 A CN 202110870592A CN 113594056 A CN113594056 A CN 113594056A
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- 238000001514 detection method Methods 0.000 title claims abstract description 86
- 239000010409 thin film Substances 0.000 title claims description 54
- 238000001579 optical reflectometry Methods 0.000 claims abstract description 75
- 230000002093 peripheral effect Effects 0.000 claims abstract description 50
- 239000010408 film Substances 0.000 claims description 118
- 238000000034 method Methods 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 37
- 238000007689 inspection Methods 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 230000002159 abnormal effect Effects 0.000 abstract description 8
- 238000012360 testing method Methods 0.000 description 11
- 239000010410 layer Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention provides a film detection method, which can obtain the maximum light reflectivity and the minimum light reflectivity of a film to be detected in a peripheral area by optically detecting the film to be detected in the peripheral area; and by comparing the difference value between the maximum light reflectivity and the minimum light reflectivity of the film to be detected in the peripheral area, whether the position of the film to be detected deviates or not can be judged. Therefore, the invention can detect whether the position of the film to be detected deviates or not by detecting the maximum light reflectivity and the minimum light reflectivity of the film to be detected, has higher detection precision, and is convenient for detecting the film to be detected in real time, thereby identifying the abnormal condition of the film in real time and improving the yield of products.
Description
Technical Field
The invention relates to the technical field of semiconductor processes, in particular to a detection method of a film.
Background
In semiconductor processing, a thin film is generally deposited on a substrate surface to prepare a functional layer through the deposited thin film, for example, a metal interconnection line is deposited on the substrate to connect devices and to transmit an electrical signal. With the progress of high integration and high performance of semiconductor devices, increasingly higher requirements are placed on the standardization of thin films, such as the type of thin film, the dimensional accuracy, and the alignment accuracy between the thin film and the substrate. If the alignment precision between the film and the substrate is low, the defects of the subsequent process are easily caused. For example, a metal foil peeling defect (metal foil peeling defect) is caused, and a problem of inter-layer short (bridge) occurs, thereby reducing the yield of the product.
In order to avoid an abnormality due to the displacement of the thin film, it is generally detected whether the position of the thin film formed on the substrate is displaced from a predetermined position of the thin film (i.e., the alignment accuracy between the thin film and the substrate is detected). In the prior art, a spectrum analyzer (XRF) is generally used to measure the thickness of a thin film, and the measurement of the thickness of the thin film is used to determine whether the position of the thin film is shifted, but because the measurement accuracy of the method is limited, if the position shift of the thin film is small (referring to fig. 1, the position shift of the thin film 11 is small on a substrate 10 formed with the shifted thin film 11), the measurement of the thickness of the thin film cannot reflect whether the thin film is shifted. That is, whether the position of the thin film is shifted or not cannot be accurately detected by this method, and the feedback period of this method is long, and therefore, a new thin film detection method is required to detect whether the position of the thin film is shifted or not.
Disclosure of Invention
The invention aims to provide a film detection method, which is used for accurately detecting whether the position of a film deviates in real time and improving the yield of products.
In order to achieve the above object, the present invention provides a method for detecting a thin film, comprising:
providing a substrate, wherein the substrate is provided with a central area and a peripheral area, the peripheral area surrounds the central area, and a film to be tested is formed on the substrate;
performing optical detection on the film to be detected in the peripheral area to obtain the maximum light reflectivity and the minimum light reflectivity of the film to be detected in the peripheral area;
and comparing the difference value between the maximum light reflectivity and the minimum light reflectivity, and judging whether the position of the film to be detected deviates according to the comparison result.
Optionally, in the detection method, a method for optically detecting the film to be detected in the peripheral area includes:
presetting a plurality of detection points on the film to be detected in the peripheral area;
carrying out optical detection on the preset detection points to obtain the light reflectivity of the detection points;
and comparing the light reflectivity of the plurality of detection points to obtain the maximum light reflectivity and the minimum light reflectivity in the light reflectivity of the plurality of detection points.
Optionally, in the detection method, the detection points are symmetrically distributed on a detection line, and the detection line is disposed in the peripheral region and surrounds the central region.
Optionally, in the detection method, when the preset detection points are optically detected, the detection beams are sequentially incident to the detection points at a predetermined incident angle, and the detection beams reflected by the detection points are received, so as to obtain the light reflectances of the detection points according to the detection beams.
Optionally, in the detection method, the wavelength of the detection light beam is 400nm to 700 nm.
Optionally, in the detection method, an incident angle of the detection light beam is 10 ° to 90 °.
Optionally, in the detection method, after the optical detection is performed on the thin film to be detected in the peripheral region, the detection method of the thin film to be detected further includes:
judging whether the size of the film to be detected is qualified, wherein the method for judging whether the size of the film to be detected is qualified comprises the following steps: and calculating the average light reflectivity of the light reflectivities of the plurality of detection points, and judging whether the size of the film to be detected is qualified or not according to the average light reflectivity.
Optionally, in the detection method, the method for determining whether the size of the film to be detected is qualified includes: comparing the average light reflectivity value with a first preset threshold value, and if the average light reflectivity value is within the first preset threshold value, judging that the size of the film to be detected is qualified; and if the value of the average light reflectivity is not within the first preset threshold value, judging that the size of the film to be detected is larger or smaller than the preset size of the film to be detected.
Optionally, in the detection method, the method for determining whether the position of the film to be detected deviates includes:
and comparing the difference value between the maximum light reflectivity and the minimum light reflectivity of the film to be detected with a second preset threshold value, and if the difference value is not within the second preset threshold value, judging that the preset position of the film to be detected relative to the film to be detected deviates.
Optionally, in the detection method, the material of the film to be detected is metal.
In the detection method of the thin film, the maximum light reflectivity and the minimum light reflectivity of the thin film to be detected in the peripheral area can be obtained by optically detecting the thin film to be detected in the peripheral area; and by comparing the difference value between the maximum light reflectivity and the minimum light reflectivity, whether the position of the film to be detected deviates can be judged. Therefore, the invention realizes the detection of whether the position of the film to be detected deviates or not by detecting the maximum light reflectivity and the minimum light reflectivity of the film to be detected in the peripheral area, has higher detection precision, and is convenient for detecting the film to be detected in real time, thereby identifying the abnormal condition of the film in real time and improving the yield of products.
Drawings
FIG. 1 is a schematic view of a structure in which the position of a thin film is shifted;
FIG. 2 is a schematic flow chart of a method for inspecting a thin film according to an embodiment of the present invention;
FIG. 3 is a top view of a substrate in a method of inspecting a thin film according to an embodiment of the present invention;
FIG. 4 is a top view of a film to be tested in the method for inspecting a film according to an embodiment of the present invention;
FIG. 5 is a graph illustrating the light reflectivity of the film under test in the thin film inspection method according to the embodiment of the present invention;
wherein the reference numerals are as follows:
10-a substrate; 11-a film;
100-a substrate; 101-a peripheral region; 102-a central region; 103-detection line; 103 a-detection point; 110-film to be tested.
Detailed Description
The following describes the detection method of the thin film according to the present invention in further detail with reference to the accompanying drawings and specific examples. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Fig. 2 is a schematic flow chart of a detection method of a thin film according to an embodiment of the present invention. As shown in fig. 2, the method for detecting a thin film to be detected includes the following steps:
step S1: providing a substrate, wherein the substrate is provided with a central area and a peripheral area, the peripheral area surrounds the central area, and a film to be tested is formed on the substrate;
step S2: performing optical detection on the film to be detected in the peripheral area to obtain the maximum light reflectivity and the minimum light reflectivity of the film to be detected in the peripheral area;
step S3: and comparing the difference value between the maximum light reflectivity and the minimum light reflectivity, and judging whether the position of the film to be detected deviates according to the comparison result.
FIG. 3 is a top view of a substrate in a method of inspecting a thin film according to an embodiment of the present invention; FIG. 4 is a top view of a film to be tested in the method for inspecting a film according to an embodiment of the present invention; fig. 5 is a graph illustrating the light reflectivity of the film to be tested in the thin film inspection method according to the embodiment of the invention. The following describes the detection method of the thin film provided in this embodiment in more detail with reference to fig. 3 to 5.
In step S1, as shown in fig. 3, a substrate 100 is provided, the substrate 100 having a central region 102 and a peripheral region 101. As shown in fig. 4, a film 110 to be tested is formed on the substrate 100. Wherein the peripheral region 101 surrounds the central region 102. The material of the substrate 100 may be silicon, germanium, silicon carbide, gallium arsenide, or indium gallium arsenide, and may also be a silicon-on-insulator substrate or a germanium-on-insulator substrate.
In this embodiment, the material of the film to be tested 110 may be metal, such as tungsten, aluminum, or copper. The thin film under test 110 may be directly or indirectly located on the substrate 100, i.e., the material immediately below the thin film under test 110 may be the substrate 100 itself, or may be other film layers on the substrate 100, such as various dielectric layers (oxide, nitride, etc.). Generally, the thin film 110 to be tested is formed by a deposition process (e.g., a chemical vapor deposition process) or a sputtering process, and is located in the central region 102 and a partial region of the edge region 101 of the substrate 100. It should be understood by those skilled in the art that one or more non-metal layers or metal layers may be formed on the substrate 100 through other semiconductor processing steps before the thin film 110 to be tested is formed, and the invention is not limited thereto.
In step S2, the film under test 110 in the peripheral region 101 is optically inspected to obtain the maximum light reflectance and the minimum light reflectance of the film under test 110 in the peripheral region 101. In general, it is required that the edge of the film 110 to be tested is located on the peripheral region 101 of the substrate 100, and the edge of the film to be tested is spaced from the edge of the peripheral region 101 by a certain distance, so as to facilitate the polishing of the film to be tested (chemical mechanical polishing in the subsequent process). However, if the film 110 to be measured is abnormal, for example, has a deviation, or the size of the film 110 to be measured is larger or smaller, the film to be measured may completely cover the substrate in the peripheral area, which may easily cause defects in the subsequent processes. Therefore, in this embodiment, by optically detecting the film under test 110 in the peripheral region 101, the abnormality of the film under test can be found in time.
Specifically, the method for optically detecting the film 110 to be detected in the peripheral area 101 includes: a plurality of detecting points 103a are preset on the film 110 to be detected in the peripheral region 101, and the detecting points 103a are symmetrically distributed on a detecting line 103, so as to detect whether the position of the film 110 to be detected deviates. If the position of the film 110 to be measured is shifted, a difference occurs between the light reflectances of the detection points 103a that are symmetrically distributed.
Further, the inventors have found that, if the position of the film under test 110 is shifted, the thickness of the film under test 110 in the peripheral region 101 and the thickness of the film under test 110 in the central region 102 are shifted, and accordingly, the light reflectivity of the peripheral region 101 and the light reflectivity of the film under test 110 in the central region 102 are also shifted. Therefore, the detection lines 103 are disposed on the peripheral region 101, and the detection lines 103 surround the central region 102. Further, the detection line 103 is obtained by shrinking a preset distance into the central region 102 with reference to the outer edge of the peripheral region 101. Wherein, the preset distance can be 3 mm-4 mm.
In addition, as a non-limiting example, six or more detection points 103a may be uniformly distributed on the detection line 103. All the detecting points 103a are arranged in a linear symmetry manner in the transverse and longitudinal directions of the substrate 100, so that a plurality of the detecting points 103a are symmetrically distributed on the detecting lines 103. It can be understood that the more detection points are set, the more accurately it can be determined whether the film 110 to be measured is abnormal.
In a preferred embodiment, when the preset detection points 103a are optically detected, the detection light beams are sequentially incident to the detection points 103a at a predetermined incident angle, and the detection light beams reflected by the detection points 103a are received, so as to obtain the light reflectivity of the detection points 103a according to the detection light beams. That is, the incident angles of the detection beams incident on all the detection points 103a are the same, so as to avoid the influence of the different incident angles on the light reflectivity, and thus the influence on the accuracy of the detection result. The incident angle of the detection beam is an incident angle between the detection beam and the corresponding detection point 103a, and may be, for example, 10 ° to 90 °, and the wavelength of the detection beam is 400nm to 700 nm.
In this embodiment, a Dual Beam spectrophotometer System (Dual Beam Spectrometer Optics System) is adopted to optically detect the film 110 to be detected in the peripheral region 101.
After the optical inspection is performed on the film 110 to be tested in the peripheral area 101, determining whether the size of the film 110 to be tested is qualified, wherein the method for determining whether the size of the film 110 to be tested is qualified includes: calculating the average value of the light reflectivity of the plurality of detection points 103a to obtain the average light reflectivity of the film 110 to be detected in the peripheral area 101, and judging whether the size of the film 110 to be detected is qualified according to the average light reflectivity.
Since the light reflectivity of the thin film to be measured and the light reflectivity of neighboring materials (such as the substrate 100, the dielectric layer, etc.) have different light reflectivities, the threshold of the light reflectivity, that is, the first preset threshold, can be preset according to the thickness, the composition, etc. of the thin film. By detecting the light reflectivity of the film 110 to be detected in the peripheral area 101, it can be determined whether the size of the film 110 to be detected is the same as the preset size of the film to be detected, i.e., whether the size of the film 110 to be detected is qualified. Further, the first predetermined threshold may be obtained by an average light reflectivity of the film 110 to be measured in the central region 102.
Specifically, the method for determining whether the size of the film 110 to be measured is qualified includes: comparing the average light reflectivity value with a first preset threshold value, and if the average light reflectivity value is within the first preset threshold value, determining that the size of the film 110 to be measured is qualified; if the average light reflectivity value is not within the first preset threshold, it is determined that the size of the film 110 to be measured is larger or smaller than the preset size of the film 110 to be measured. Here, the size of the film 110 to be measured refers to the size of the substrate 100 in the horizontal direction.
In step S3, a difference between the maximum light reflectance and the minimum light reflectance is obtained, and whether the position of the film 110 to be measured is shifted is determined according to the difference. Specifically, the method for determining whether the position of the film 110 to be measured is shifted includes: comparing the difference between the maximum light reflectivity and the minimum light reflectivity with a second preset threshold, and if the difference is not within the second preset threshold, determining that the preset position of the film to be measured 110 relative to the film to be measured 110 is deviated.
Referring to fig. 5, in fig. 5, the abscissa is the distance (in mm) between the outer edge of the substrate 100 and the detection point, and the ordinate is the light reflectance of the detection point. The curve a is a curve of a film conforming to a specification (position, size), and the curve b is an abnormal film curve, and it can be seen from the curve b that there is a difference between the light reflectance of the film conforming to the specification and the light reflectance of the abnormal film. Therefore, in this embodiment, by detecting the light reflectivity of the to-be-detected film in the peripheral area, whether the position of the to-be-detected film 110 is shifted or not can be effectively detected, and the detection precision is higher, so that the to-be-detected film 110 can be conveniently detected in real time, thereby identifying the abnormal condition of the film in real time and improving the yield of products.
In summary, in the thin film detection method provided in the embodiment of the present invention, the maximum light reflectance and the minimum light reflectance of the thin film to be detected in the peripheral region can be obtained by optically detecting the thin film to be detected in the peripheral region; and by comparing the difference value between the maximum light reflectivity and the minimum light reflectivity, whether the position of the film to be detected deviates can be judged. Therefore, the invention can detect whether the position of the film to be detected deviates or not by detecting the maximum light reflectivity and the minimum light reflectivity of the film to be detected, has higher detection precision, and is convenient for detecting the film to be detected in real time, thereby identifying the abnormal condition of the film in real time and improving the yield of products.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. A method for inspecting a thin film, comprising:
providing a substrate, wherein the substrate is provided with a central area and a peripheral area, the peripheral area surrounds the central area, and a film to be tested is formed on the substrate;
performing optical detection on the film to be detected in the peripheral area to obtain the maximum light reflectivity and the minimum light reflectivity of the film to be detected in the peripheral area;
and acquiring a difference value between the maximum light reflectivity and the minimum light reflectivity, and judging whether the position of the film to be detected deviates or not according to the difference value.
2. The method for inspecting a film according to claim 1, wherein the method for optically inspecting the film to be inspected in the peripheral area comprises:
presetting a plurality of detection points on the film to be detected in the peripheral area;
carrying out optical detection on the preset detection points to obtain the light reflectivity of the detection points;
and comparing the light reflectivity of the plurality of detection points to obtain the maximum light reflectivity and the minimum light reflectivity in the light reflectivity of the plurality of detection points.
3. The method for inspecting a thin film according to claim 2, wherein the plurality of inspection points are symmetrically distributed on an inspection line, and the inspection lines are disposed in the peripheral region and surround the central region.
4. The method for inspecting a thin film according to claim 3, wherein in the optical inspection of the plurality of predetermined inspection points, a detection beam is sequentially incident to the plurality of inspection points at a predetermined incident angle, and the detection beam reflected by the plurality of inspection points is received to obtain the light reflectance of the plurality of inspection points from the detection beam.
5. The method for inspecting a film according to claim 4, wherein the wavelength of the detection beam is 400nm to 700 nm.
6. The method of inspecting a film of claim 4, wherein the incident angle of the inspection beam is 10 ° to 90 °.
7. The method for inspecting a film according to claim 2, wherein after the optical inspection of the film to be inspected in the peripheral area, the method for inspecting a film to be inspected further comprises:
judging whether the size of the film to be detected is qualified, wherein the method for judging whether the size of the film to be detected is qualified comprises the following steps: and calculating the average value of the light reflectivity of the plurality of detection points to obtain the average light reflectivity of the film to be detected in the peripheral area, and judging whether the size of the film to be detected is qualified or not according to the average light reflectivity.
8. The method for inspecting a thin film according to claim 7, wherein the step of determining whether the size of the thin film to be inspected is acceptable comprises: comparing the average light reflectivity value with a first preset threshold value, and if the average light reflectivity value is within the first preset threshold value, judging that the size of the film to be detected is qualified; and if the value of the average light reflectivity is not within the first preset threshold value, judging that the size of the film to be detected is larger or smaller than the preset size of the film to be detected.
9. The method for inspecting a film according to claim 1, wherein the step of determining whether the position of the film to be inspected is shifted comprises:
and comparing the difference value between the maximum light reflectivity and the minimum light reflectivity of the film to be detected in the peripheral area with a second preset threshold value, and if the difference value is not within the second preset threshold value, judging that the preset position of the film to be detected relative to the film to be detected deviates.
10. The method for inspecting a thin film according to any one of claims 1 to 9, wherein the material of the thin film to be inspected is a metal.
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2021
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| KR20040049908A (en) * | 2002-12-05 | 2004-06-14 | 삼성전자주식회사 | System for detecting deposited film on wafer using dual sensor |
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