CN113540736A - Silicon-based SIW millimeter wave high-power divider based on MEMS technology - Google Patents
Silicon-based SIW millimeter wave high-power divider based on MEMS technology Download PDFInfo
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- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
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- H01P5/12—Coupling devices having more than two ports
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Abstract
The invention discloses a silicon-based SIW millimeter wave high-power divider based on an MEMS technology, which comprises a silicon substrate, TSV through holes arranged in the silicon substrate, an SIW structure formed by the TSV through holes, the TSV through holes arranged in the SIW, transition micro-strips arranged between the SIW structure and coplanar waveguides, a groove arranged on the upper surface of a gold layer, a tantalum nitride resistor arranged on the groove, the coplanar waveguides arranged at an input/output port and an inductive metal column. The silicon-based SIW millimeter wave high-power divider based on the MEMS technology has the characteristics of small size, high processing precision, easiness in integration, high power capacity, high integration level, high design freedom, high isolation, low transmission loss, low return loss and the like, and can be widely applied to high-power synthesis of millimeter wave frequency bands.
Description
Technical Field
The invention relates to a silicon-based SIW millimeter wave high-power divider based on an MEMS technology, and belongs to the technical field of millimeter wave power amplification chip synthesis.
Background
In recent years, due to the rapid development of communication technology, research and development of microwave and millimeter wave devices and systems have received more and more extensive attention. The millimeter wave has the characteristics of high resolution, large information capacity, wide available frequency spectrum range, strong anti-interference capability and the like, and because the wavelength of the millimeter wave is short, corresponding devices and systems have small volumes and are easier to integrate.
Substrate Integrated Waveguide (SIW) is a novel microwave and millimeter wave guide structure. The structure is equivalent to a waveguide smooth side wall by arranging a plurality of metallized through holes in a medium substrate at certain intervals, so that a quasi-closed waveguide structure is formed by the structure and metal on the upper surface and the lower surface, and the characteristics of low insertion loss, high power capacity and the like of the metal waveguide are maintained. The planar integrated transmission line has the similar transmission characteristics with the waveguide and also has the planar integrated characteristics of the microstrip transmission line. Therefore, the SIW has the characteristics of small transmission loss, high Q value, small volume, light weight, simple structure, easy integration and the like, and is widely applied to millimeter wave circuits and high-integration microwave circuits, such as power dividers, filters, circulators and the like.
Microwave power amplifiers are important circuit components in microwave systems, and are widely used in wireless, base station, and satellite communication systems. In these electronic fields, due to the physical mechanism and the limitation of the manufacturing process, the emission power of a single power device is generally required to be increased by a power synthesis technology, and the detection and the action distance are increased. Compared with a common Lange bridge, the size of the bridge is greatly influenced by wavelength, and the size of the bridge in millimeter wave band is too small, so that the port cannot be adjusted to be flush with the port of a chip, and the synthesis of the chip is not convenient. And the port position and the size of the SIW power divider have more design freedom due to the similar transmission characteristics of the waveguide. The power divider based on the SIW has the advantages of low transmission loss, high power capacity, simple structure and the like in a millimeter wave band due to the special transmission characteristics of the power divider.
Printed Circuit Board (PCB) technology or low temperature co-fired ceramic (LTCC) technology and the like are mostly adopted in the traditional SIW power divider structure, when devices such as resistors and the like are added, an electronic assembly technology is needed to be adopted to weld surface-mounted devices, a process is added during mass assembly, and the devices such as resistors and the like are large in size and difficult to integrate after standard packaging; secondly, when a PCB or LTCC process is adopted for processing, the aperture and the hole spacing of the metallized through holes are strictly limited, the spacing of the metallized through holes cannot prevent energy leakage in a high frequency band, and the tolerance of the process manufacturing is superposed, so that the microwave radio frequency performance is greatly influenced; on the other hand, the heat conducting capacity of the dielectric plate or the ceramic plate is weak, and the resistor cannot be helped to dissipate heat under the high-power working condition.
Therefore, the traditional SIW power divider cannot meet the requirements of assembly process, integration level, processing precision, heat conduction capacity and the like, and the application of the traditional SIW power divider in the field of high-power synthesis of millimeter wave and above frequencies is greatly limited.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the silicon-based SIW millimeter wave high-power divider based on the MEMS technology meets the requirements of the millimeter wave SIW power divider in various aspects of assembly process, integration level, machining precision and heat conduction, has the advantages of small volume, high machining precision, easiness in integration, large power capacity, high integration level, high design freedom, high isolation level, low transmission loss, low return loss and the like, has universality, and can be widely applied to millimeter wave receiving and transmitting systems.
The invention adopts the following technical scheme for solving the technical problems:
a silicon-based SIW millimeter wave high-power divider based on MEMS technology comprises a silicon substrate, TSV through holes forming an SIW structure, an inductive metal column, a transition micro-strip, a slot, a tantalum nitride resistor and a coplanar waveguide;
the two output ports of the power divider are symmetrical about the input port of the power divider, the SIW structure is symmetrical about the input port of the power divider, the input port is arranged on one side of the upper surface of the silicon substrate, and the two output ports are arranged on the other side opposite to the side where the input port is arranged;
the power divider comprises a silicon substrate, a TSV through hole, a transition microstrip, a gold layer, a slot, a tantalum nitride resistor and two output ports, wherein the TSV through hole is formed in the silicon substrate and communicated with the upper surface and the lower surface of the silicon substrate, coplanar waveguides are arranged on one input port and the two output ports of the power divider, the transition microstrip is arranged between an SIW structure and the coplanar waveguides, the upper surface of the silicon substrate is covered with the gold layer, the slot is formed in the upper surface of the gold layer, the two output ports of the power divider are symmetrical about the slot, one end of the slot is opposite to the input port, an inductive metal column is arranged between the other end of the slot and the edge of the SIW structure, the two output ports of the power divider are symmetrical about the inductive metal column, the tantalum nitride resistor is arranged on the slot, and two ends of the tantalum nitride resistor are respectively contacted with two long edges of the slot.
In a preferred embodiment of the present invention, the width of the portion of the SIW structure that is connected to the input port or the output port is W3，W3Satisfies the following conditions:
in the formula, WeffD is the diameter of the TSV, and b is the hole center distance between two adjacent TSV through holes;
TE in SIW Structure10Cut-off frequency of mode
Comprises the following steps:
wherein c is the speed of light in vacuum,. epsilonrIs the relative permittivity of the medium;
therefore, the frequency f of the millimeter wave designed to be propagated in the power divider satisfies the following conditions:
in the formula (I), the compound is shown in the specification,
are respectively TE20、TE01The cutoff frequency of the mode.
As a preferred scheme of the invention, the TSV through holes are arranged in the silicon substrate through the MEMS technology, the thickness of the silicon substrate is 200um, the diameter of each TSV through hole is 30um, and the hole center distance between every two adjacent TSV through holes is 100 um.
As a preferable scheme of the invention, the tantalum nitride resistor is set by adopting a semiconductor process, and the sectional area is not more than 0.005mm2The thickness is in the order of angstroms.
As a preferable scheme of the invention, the tantalum nitride resistor realizes the patterning of the tantalum nitride by sputtering the tantalum nitride metal layer on the whole surface and then photoetching and etching after photoetching.
In a preferred embodiment of the present invention, the thermal conductivity of the silicon substrate is 150W/(m.cndot.).
In a preferred embodiment of the present invention, the coplanar waveguide is connected to the outside by a gold bonding wire.
As a preferred scheme of the invention, the TSV via hole is placed in the silicon substrate through the process flows of etching a blind hole, depositing an in-hole insulating layer and an adhesion layer, deep hole electroplating and CMP planarization.
Compared with the prior art, the invention adopting the technical scheme has the following technical effects:
1. the SIW structure adopted by the invention is equivalent to a waveguide smooth side wall by a structure for placing the metal pillar TSV holes which are periodically arranged, and has the advantages of small transmission loss, small volume, simple structure, easiness in integration and the like in a millimeter wave band.
2. The MEMS processing technology adopted by the invention can realize the placement of the TSV through holes with the diameter of 30um and the hole pitch of 100um, greatly reduce the metal column pitch, effectively prevent electromagnetic wave leakage in the frequency band of millimeter wave and above, and is very important for ensuring the performance of the high frequency band.
3. The inductive metal columns are loaded in the power divider, the positions and the arrangement shapes of the through holes are adjusted, and therefore the isolation between the ports can be improved, and the matching of the ports can be improved.
4. The invention slots the center of the gold layer on the surface of the power divider, and utilizes the semiconductor process to increase the tantalum nitride resistor for absorbing the reflected wave of the output port and improving the isolation between the ports.
5. The invention adopts the sputtering technology to place the tantalum nitride resistor with the sectional area not more than 0.005mm2In a thickness of HermitianCompared with the common chip resistor package, the size is greatly reduced, an electronic assembly process is not needed, the resistance value is adjusted more flexibly, the manufacturing precision can be effectively improved, and the performance of the power divider is convenient to optimize.
6. The silicon-based SIW power divider adopts the silicon substrate with the thermal conductivity of 150W/(m DEG C) as the heat dissipation substrate of the resistor. When microwave signals are reflected to the resistor and absorbed by the resistor to be converted into heat, the resistor can normally and stably work under the condition of injecting 20 watts of continuous wave power.
7. The invention realizes the graphical metal wiring of the SIW structure by photoetching and patterning in an electroplating way, realizes the placement of the transition micro-strip between the SIW structure and the coplanar waveguide graph of the input end and the output end, adopts the mode of the gold bonding wire to be connected with the outside, ensures low transmission loss and is convenient to integrate with a chip. The semiconductor process can perform wiring with the minimum line width of 10um and the line spacing of 10um, realizes micron-sized wiring precision, and is more favorable for design of millimeter wave bands and higher frequency bands.
8. The invention has high design freedom, can optimize a plurality of parameters, is easier to carry out port matching, integration and synthesis with chips with different sizes compared with a Lange bridge, and has universality for GaAs power amplifier chips and GaN power amplifier chips.
Drawings
Fig. 1 is a schematic structural diagram of a silicon-based SIW millimeter wave high-power divider based on the MEMS technology.
Fig. 2 is a schematic size diagram of a silicon-based SIW millimeter wave high-power divider based on the MEMS technology.
FIG. 3 is a diagram showing an embodiment 1 of the present invention.
Fig. 4 is a diagram showing an embodiment 2 of the present invention.
FIG. 5 is a graph of output power versus frequency for example 2 of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
As shown in fig. 1 and fig. 2, the invention designs a silicon-based SIW millimeter wave high-power divider based on the MEMS technology, which includes a silicon substrate 1, TSV via holes 3 arranged in the silicon substrate 1, a SIW structure 2 formed by the TSV via holes 3, the TSV via holes 3 arranged in the SIW, transition micro-strips 5 arranged between the SIW structure 2 and coplanar waveguides, slots 6 arranged on the upper surface of the gold layer, tantalum nitride resistors 7 arranged on the slots 6, coplanar waveguides 8 arranged on the input/output ports, and inductive metal pillars 4.
TSV (through silicon via) holes 3 are arranged in the silicon substrate 1, and the distance between the two rows of through holes is W3The distance between the through holes in each row is b, and the diameter of each through hole is D. By optimizing D/W3b/D, so that the energy leakage is limited to a negligible extent, typically so that b/D < 2 and D/W3< 0.2 (based on actual use frequency and simulation result), the two rows of metal through holes can be equivalent to electric walls to form the SIW structure 2, so that the electromagnetic field is similar to the transmission characteristic in the metal waveguide when being transmitted in the SIW, and the transmission loss of microwave signals in millimeter wave bands is reduced. Wherein WeffFor the equivalent width of a metal waveguide, it is derived from theory:
TE in SIW can be derived from a cut-off frequency formula of the metal waveguide10Cut-off frequency of mode
Wherein c is the speed of light in vacuum, εrIs the relative dielectric constant of the mediumAnd (4) counting.
To prevent interference of higher order modes, ensure only TE10One mode can be propagated, and the design needs to ensure that:
the placement of TSV through holes 3 with the diameter of 30um and the hole spacing of 100um is carried out on a silicon substrate 1 with the diameter of 200um by utilizing the MEMS technology, and the wiring with the minimum line width of 10um and the line spacing of 10um is realized, so that the micron-sized processing precision is realized, two rows of TSV through holes can be equivalent to a power wall, and the method is very important for ensuring the performance of a high frequency band.
The inductive metal columns 4 are loaded in the power divider, and the positions and the arrangement shapes of the through holes are adjusted, so that the isolation between the ports can be improved, and the matching of the ports can be improved.
A groove 6 is formed in the center of a gold layer on the surface of the power divider, and a tantalum nitride resistor 7 is added by using a semiconductor process and is used for absorbing reflected waves of an output port and improving the isolation between the ports.
The tantalum nitride resistor 7 is added by a semiconductor process, and the sectional area is not more than 0.005mm2The thickness is the angstrom level, compares the chip resistor encapsulation of using always, not only reduces the size greatly to need not electronic assembly process, can effectively improve the preparation precision.
The heat dissipation of the tantalum nitride resistor 7 is assisted by the silicon substrate 1 with a thermal conductivity of 150W/(m DEG C.).
The SIW structure is converted into a coplanar waveguide form by using a transition microstrip 5, and is connected with the outside in a gold bonding wire mode, so that the integration with a chip is facilitated while the low transmission loss is ensured.
The radio frequency input and output are in a coplanar waveguide 8 form, so that low return loss of the input and output ends is ensured. Wherein the coplanar waveguide has a linewidth W1And a distance from the ground of (W)2-W1) /2 by adjusting W1、W2The coplanar waveguide impedance is adjusted to 50 ohms.
The TSV hole is placed in the silicon substrate through the technological processes of etching blind holes, depositing an insulating layer and an adhesion layer in the hole, electroplating deep holes, CMP (chemical mechanical polishing) leveling and the like on the silicon substrate based on semiconductor technology processing.
The invention is based on semiconductor process processing, and realizes patterns such as gold layer upper surface grooving, transition micro-strip and coplanar waveguide in an electroplating mode after photoetching and patterning are carried out on the upper surface of a silicon substrate.
The invention is based on semiconductor process processing, and realizes the patterning of the tantalum nitride by sputtering the tantalum nitride metal layer on the whole surface of the upper surface of the gold layer, and then photoetching and etching after photoetching, thereby placing the tantalum nitride resistor at the groove.
The power divider can be suitable for a microwave power chip integrated circuit with the frequency band of Ka wave band and the bearing power of 20 watts at most, and has universality.
The power divider, the GaAs or GaN power amplification chip, the ceramic capacitor and the microstrip line are adhered to the corresponding positions of the molybdenum-copper carrier plate through the high-thermal-conductivity and electric-conduction glue, the thermal conductivity coefficient of the high-thermal-conductivity and electric-conduction glue is close to that of gold-tin solder, and the thermal conductivity coefficient of molybdenum-copper is 160W/(m.DEG C), so that the good heat dissipation of the power divider and the power amplifier chip is ensured, the thermal expansion coefficients of silicon, GaAs or GaN and the molybdenum-copper material are close, and the deformation or the cracking of the device due to the temperature is prevented.
The invention interconnects a metal PAD arranged on the surface of a GaAs or GaN power amplification chip and a corresponding SIW power divider through a gold wire; the metal PAD arranged on the surface of the GaAs or GaN power amplification chip is interconnected with the corresponding ceramic capacitor through a gold wire; the ceramic capacitor is connected with the corresponding microstrip line through a gold wire.
The molybdenum-copper carrier plate is provided with the four through holes, and the molybdenum-copper carrier plate can be installed and fixed in a test frame or a system through screws, so that the test and the verification are convenient.
Fig. 3 and 4 are diagrams of embodiments 1 and 2 of the present invention, respectively.
As shown in fig. 5, which is a graph of the relationship between the output power and the frequency in embodiment 2 of the present invention, the frequency range in this scheme is 33-37GHz, the output of a single GaN power amplification chip is 41dbm, the performance of the GaN power amplification chip after power synthesis is excellent, and good microwave electrical performance can be realized.
The above embodiments are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modifications made on the basis of the technical scheme according to the technical idea of the present invention fall within the protection scope of the present invention.
Claims (8)
1. A silicon-based SIW millimeter wave high-power divider based on MEMS technology is characterized by comprising a silicon substrate (1), TSV through holes (3) forming an SIW structure, inductive metal columns (4), transition micro-strips (5), slots (6), a tantalum nitride resistor (7) and coplanar waveguides (8);
the two output ports of the power divider are symmetrical about the input port of the power divider, the SIW structure is symmetrical about the input port of the power divider, the input port is arranged on one side of the upper surface of the silicon substrate (1), and the two output ports are arranged on the other side opposite to the side where the input port is arranged;
the TSV through holes (3) are arranged in the silicon substrate (1), the TSV through holes (3) are communicated with the upper surface and the lower surface of the silicon substrate (1), coplanar waveguides (8) are arranged at one input port and two output ports of the power divider, a transition microstrip (5) is arranged between the SIW structure and the coplanar waveguides (8), a gold layer is coated on the upper surface of the silicon substrate (1), the slot (6) is arranged on the upper surface of the gold layer, two output ports of the power divider are symmetrical about the slot (6), one end of the slot (6) is opposite to the input port, the inductive metal column (4) is arranged between the other end of the slot (6) and the edge of the SIW structure, and two output ports of the power divider are symmetrical about the inductive metal column (4), the tantalum nitride resistor (7) is arranged on the open slot (6), and two ends of the tantalum nitride resistor (7) are respectively contacted with two long edges of the open slot (6).
2. The silicon-based SIW millimeter wave high-power divider based on MEMS technology as claimed in claim 1, wherein the width of the SIW structure connected to the input port or the output port is W3，W3Satisfies the following conditions:
in the formula, WeffD is the diameter of the TSV, and b is the hole center distance between two adjacent TSV through holes;
TE in SIW Structure10Cut-off frequency of mode
Comprises the following steps:
wherein c is the speed of light in vacuum,. epsilonrIs the relative permittivity of the medium;
therefore, the frequency f of the millimeter wave designed to be propagated in the power divider satisfies the following conditions:
in the formula (I), the compound is shown in the specification,
are respectively TE20、TE01The cutoff frequency of the mode.
3. The silicon-based SIW millimeter wave high-power divider based on MEMS technology of claim 1, wherein the TSV (3) is formed in the silicon substrate (1) through MEMS technology, the thickness of the silicon substrate (1) is 200um, the diameter of the TSV (3) is 30um, and the hole center distance between two adjacent TSV is 100 um.
4. The silicon-based SIW millimeter wave high-power divider based on MEMS technology as claimed in claim 1, wherein said tantalum nitride resistor (7) is formed by semiconductor process and has a cross-sectional area not greater than 0.005mm2The thickness is in the order of angstroms.
5. The silicon-based SIW millimeter wave high-power divider based on the MEMS technology as claimed in claim 1, wherein the tantalum nitride resistor (7) is patterned by sputtering a tantalum nitride metal layer on the whole surface and then performing photolithography and etching after photolithography.
6. The silicon-based SIW millimeter wave high-power divider based on MEMS technology of claim 1, wherein the thermal conductivity of the silicon substrate (1) is 150W/(m-C).
7. The silicon-based SIW millimeter wave high-power divider based on MEMS technology as claimed in claim 1, wherein said coplanar waveguide (8) is connected with the outside by means of gold bonding wire.
8. The silicon-based SIW millimeter wave high-power divider based on MEMS technology according to claim 1, wherein the TSV via (3) is placed in the silicon substrate (1) through the process flows of etching blind holes, depositing an in-hole insulating layer and an adhesion layer, deep hole electroplating and CMP planarization.
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| CN114497948A (en) * | 2022-01-26 | 2022-05-13 | 中国电子科技集团公司第十三研究所 | Millimeter wave conversion structure |
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| CN115378379A (en) * | 2022-10-20 | 2022-11-22 | 南京正銮电子科技有限公司 | Power amplifier based on SIW |
| CN115513630A (en) * | 2022-09-06 | 2022-12-23 | 北京邮电大学 | Coplanar waveguide power divider and antenna |
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| CN114497948A (en) * | 2022-01-26 | 2022-05-13 | 中国电子科技集团公司第十三研究所 | Millimeter wave conversion structure |
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Application publication date: 20211022 |