CN113540389B - OLED anode preparation method - Google Patents
OLED anode preparation method Download PDFInfo
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- CN113540389B CN113540389B CN202110814659.0A CN202110814659A CN113540389B CN 113540389 B CN113540389 B CN 113540389B CN 202110814659 A CN202110814659 A CN 202110814659A CN 113540389 B CN113540389 B CN 113540389B
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- 238000002360 preparation method Methods 0.000 title abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000000227 grinding Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000010409 thin film Substances 0.000 claims description 13
- 238000007517 polishing process Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000003801 milling Methods 0.000 claims 1
- 230000002159 abnormal effect Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 115
- 238000005530 etching Methods 0.000 description 13
- 238000005498 polishing Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a preparation method of an OLED anode. The preparation method of the OLED anode comprises the following steps: forming an anode pattern on the surface of the substrate; forming an insulating layer on a surface of the anode pattern away from the substrate; the insulating layer includes an anode opening exposing at least a portion of the anode pattern; forming a conductive layer on a surface of the anode pattern away from the substrate, the conductive layer covering the insulating layer and the exposed anode pattern; and removing the conductive layer outside the anode opening by adopting a grinding process, and removing part of the insulating layer. The embodiment of the invention can avoid the residual of the conducting layer material between the adjacent anode patterns, thereby avoiding abnormal display caused by short circuit between the adjacent anodes and improving the product yield.
Description
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a preparation method of an OLED anode.
Background
The current market has expanded the demands for the diversity and high performance of display devices, greatly promoting the development of display technology. Organic Light-Emitting Diode (OLED) display devices are becoming popular because of their advantages of ultra-Light weight, ultra-thin shape, high brightness, and wide viewing angle. In the prior art, an etching process is adopted to prepare the anode, however, due to the technical problems of etching uniformity, residues and the like in the etching process, the existing anode preparation method has the problem of abnormal display caused by short circuit between adjacent anodes, and the yield of products is reduced.
Disclosure of Invention
The embodiment of the invention provides a preparation method of an OLED anode, which is used for avoiding the residual of conducting layer materials between adjacent anode patterns, so as to avoid abnormal display caused by short circuit between adjacent anodes and improve the product yield.
The embodiment of the invention provides a preparation method of an OLED anode, which comprises the following steps:
forming an anode pattern on the surface of the substrate;
forming an insulating layer on a surface of the anode pattern away from the substrate; the insulating layer includes an anode opening exposing at least a portion of the anode pattern;
forming a conductive layer on a surface of the anode pattern away from the substrate, the conductive layer covering the insulating layer and the exposed anode pattern;
and removing the conductive layer outside the anode opening by adopting a grinding process, and removing part of the insulating layer.
Optionally, the grinding process comprises: chemical mechanical polishing process.
Optionally, a surface of the insulating layer remaining after polishing away from the substrate is flush with a surface of the conductive layer remaining after polishing away from the anode pattern.
Optionally, the thickness of the insulating layer before grinding is 1.5-2 times the thickness of the anode pattern.
Optionally, the thickness of the insulating layer before grinding is 1.5 times the thickness of the anode pattern.
Optionally, the sum of the thicknesses of the conductive layer and the anode pattern is less than the thickness of the insulating layer before polishing.
Optionally, the process of forming the conductive layer includes: and (5) sputtering.
Optionally, the insulating layer is an inorganic thin film or an organic thin film.
Optionally, the process of forming the insulating layer includes: a thin film process;
the process of forming the anode opening includes: and (5) an exposure and development process.
Optionally, the material of the anode pattern is aluminum or silver;
the material of the conductive layer is indium tin oxide or titanium nitride.
In the preparation method of the OLED anode provided by the embodiment of the invention, an insulating layer is formed firstly, and then a conducting layer is formed; wherein, the thickness of the insulating layer is greater than the thickness of the anode pattern, and the conductive layer covers the insulating layer and the exposed anode pattern. By this arrangement, it is ensured that the conductive layer outside the anode opening can be removed using a grinding process during the subsequent manufacturing process. By controlling the polishing thickness during the polishing process, the conductive layer outside the anode opening can be completely removed, while the conductive layer inside the anode opening is retained. Therefore, good contact between the conductive layer and the anode patterns can be ensured, and residual materials of the conductive layer outside the anode opening can be effectively avoided, so that the insulation effect between adjacent anode patterns is better. Therefore, compared with the prior art, the embodiment of the invention can avoid the residual of the conductive layer material between the adjacent anode patterns, thereby avoiding abnormal display caused by short circuit between the adjacent anodes and improving the product yield.
Drawings
FIG. 1 is a schematic diagram of the structure of a preparation method of an OLED anode in the prior art in each step;
FIG. 2 is an enlarged schematic view of the area A of FIG. 1 in the prior art;
FIG. 3 is a schematic flow chart of a method for preparing an OLED anode according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a preparation method of an OLED anode in each step according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a method for preparing an anode pattern in each step according to an embodiment of the present invention.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings.
As described in the background art, in the conventional OLED products, particularly in the micro display field, the display area of the product may be abnormal due to short circuit between adjacent anodes due to the problem of etching process. The following describes the existing technical problems in detail.
Fig. 1 is a schematic structural diagram of a preparation method of an OLED anode in the prior art in each step. Referring to fig. 1, the OLED anode is a stacked structure including a reflective layer and a conductive layer 30 along a direction in which a substrate 10 is directed to an anode pattern 21. Wherein the reflective layer and the conductive layer 30 are both made of a conductive material; illustratively, the reflective layer itself may comprise a multilayer stack of conductive materials; and, the reflective layer includes a plurality of anode patterns 21 arranged in an array. The existing preparation steps of the OLED anode comprise:
s11, an anode pattern 21 is formed on the surface of the substrate 10.
S12, a conductive layer 30 is formed on the surface of the anode pattern 21 away from the substrate 10.
And S13, coating a photoresist layer 40 on the surface of the conductive layer 30, which is far away from the anode pattern 21, and performing photoetching so that the photoresist layer 40 covers at least part of the anode pattern 21.
For example, as shown in fig. 1, the photoresist layer 40 remaining after photolithography completely covers the anode patterns 21, and the conductive layer 30 between adjacent anode patterns 21 is exposed.
S14, etching the conductive layer 30 not covered by the photoresist layer 40.
In the existing preparation method of the OLED anode, the conductive layer 30 may be etched by using a wet etching process or a dry etching process. For products in the micro display field such as the Mirco OLED, the precision requirement of the products cannot be met by using a wet etching process, so that the conductive layer 30 is etched by using a dry etching process with higher etching precision. However, no matter what etching process is, there are process problems such as etching uniformity and residues, and metal pollution may also occur in the etching process. Fig. 2 is an enlarged schematic view of the area a in fig. 1 in the prior art. As shown in fig. 2, the etched conductive layer 30 has a residual material 31 between the adjacent anode patterns 21, and the residual material 31 may form a connection path between the adjacent anode patterns 21, resulting in a short circuit between the adjacent anodes, thereby causing abnormal display and decreasing the yield of the product.
In order to solve the problems, the embodiment of the invention provides a preparation method of an OLED anode. FIG. 3 is a schematic flow chart of a method for preparing an OLED anode according to an embodiment of the present invention; fig. 4 is a schematic structural diagram of a preparation method of an OLED anode in each step according to an embodiment of the present invention. Referring to fig. 3 and 4, the method for preparing the OLED anode includes the steps of:
s110, an anode pattern 121 is formed on the surface of the substrate 110.
Wherein the substrate 110 may be a silicon-based substrate. Illustratively, the substrate 110 may be a back plate made of amorphous silicon, microcrystalline silicon, or low temperature polysilicon thin film transistors; for Micro OLED Micro-display devices, the substrate 110 may be a back plate made of monocrystalline silicon chips. The single-pixel size can be reduced to about 1/10 of that of the traditional display device by taking the single-crystal silicon chip as the substrate, and the single-crystal silicon has high mobility, so that higher resolution can be realized.
Fig. 5 is a schematic structural diagram of a method for preparing an anode pattern in each step according to an embodiment of the present invention. The following describes the preparation steps of the anode pattern 121 in detail with reference to fig. 5, but is not a limitation of the present invention. Referring to fig. 5, illustratively, the preparing steps of the anode pattern 121 include:
s111, a thin film process is used to form the reflective layer 120 on the surface of the substrate 110.
The reflective layer 120 may be made of a material with high reflectivity, such as aluminum or silver. The arrangement is beneficial to improving the performance of the top-emission organic light-emitting diode device on the silicon-based substrate. By way of example, the thin film process may include sputtering (dispenser) or deposition, among others.
And S112, transferring the required anode pattern onto the reflecting layer 120 by adopting a yellow light process.
The photolithography process may include steps of coating the photoresist layer 210, exposing, and developing. Illustratively, the photoresist layer 210 remaining after development covers the reflective layer 120 where the anode pattern 121 needs to be preserved.
S113, an etching process is used to obtain the anode pattern 121.
The etching process may be a Dry etching (Dry Etch) process, among others. Illustratively, a plurality of anode patterns 121 may be arrayed on the surface of the substrate 110. Taking Micro OLED products as an example, the length and width of the anode pattern 121 are in the order of several micrometers to tens of micrometers, and the thickness d2 of the anode pattern 121 is in the order of several tens of nanometers to hundreds of nanometers.
S120, forming an insulating layer 130 on the surface of the anode pattern 121 away from the substrate 110; the insulating layer 130 includes an anode opening 131, and the anode opening 131 exposes at least a portion of the anode pattern 121.
Illustratively, the insulating layer 130 is prepared by the steps of:
1. a thin film process is used to form a layer of insulating material on the surface of the anode pattern 121 remote from the substrate 110. Wherein the insulating material layer covers all of the anode patterns 121.
2. An anode opening 131 is formed at a position of the insulating material layer corresponding to the anode pattern 121 using an exposure developing process.
As shown in fig. 4, the anode pattern 121 has a trapezoidal cross-sectional shape, and the bottom surface of the anode pattern 121 having a larger area contacts the surface of the substrate 110, which is advantageous for filling and depositing the insulating layer 130 in the gaps of the anode pattern 121. The inclined surface of the anode pattern 121 may be disposed at an angle of, for example, 50-85 ° with respect to the surface of the substrate 110. Accordingly, the insulating layer 130 has an inverted trapezoid shape at the portion between the adjacent anode patterns 121, so that the conductive layer material can be effectively prevented from being deposited on the sidewall of the insulating layer 130 when the conductive layer 140 is prepared later; the thickness of the conductive layer 140 in the anode opening 131 is ensured to be uniform, so that the flatness of the organic light emitting layer above the conductive layer 140 is improved, and the film coverage of the organic light emitting layer is improved. Alternatively, the anode opening 131 may partially expose the upper surface of the anode pattern 121; alternatively, as shown in fig. 4, the anode opening 131 completely exposes the upper surface of the anode pattern 121.
S130, a conductive layer 140 is formed on the surface of the anode pattern 121 away from the substrate 110, and the conductive layer 140 covers the insulating layer 130 and the exposed anode pattern 121.
Illustratively, the conductive layer 140 may be prepared using a sputtering process.
S140, a polishing process is used to remove the conductive layer 140 outside the anode opening 131, and remove a portion of the insulating layer 130.
Illustratively, the grinding process includes: chemical mechanical polishing (Chemical Mechanical Polishing, CMP) process. During the polishing process, the conductive layer 140 located outside the anode opening 131 is entirely removed; the thickness of the remaining insulating layer 130 may be greater than or equal to the sum of the thicknesses of the anode pattern 121 and the remaining conductive layer 140.
In the method for preparing the OLED anode provided by the embodiment of the invention, the insulating layer 130 is formed first, and then the conductive layer 140 is formed; wherein the thickness of the insulating layer 130 is greater than that of the anode pattern 121, and the conductive layer 140 covers the insulating layer 130 and the exposed anode pattern 121. This arrangement ensures that the conductive layer 140 outside the anode opening 131 can be removed using a grinding process during the subsequent manufacturing process. By controlling the polishing thickness during the polishing, the conductive layer 140 located outside the anode opening 131 can be entirely removed, while the conductive layer 140 located inside the anode opening 131 is maintained. In this way, not only can good contact between the conductive layer 140 and the anode pattern 121 be ensured, but also the residual material of the conductive layer 140 outside the anode opening 131 can be effectively avoided, so that the insulation effect between the adjacent anode patterns 121 is better. Therefore, the embodiment of the invention can avoid the residual material of the conductive layer 140 between the adjacent anode patterns 121, thereby avoiding abnormal display caused by short circuit between the adjacent anodes and improving the product yield. In addition, in the embodiment of the present invention, the grinding process is used for the conductive layer 140 instead of the photolithography etching process in the prior art, so that the preparation cost can be reduced.
With continued reference to fig. 4, the surface of the insulating layer 130 remaining after polishing away from the substrate 110 is optionally flush with the surface of the conductive layer 140 remaining after polishing away from the anode pattern 121, as in the above embodiments. By this arrangement, the difference in height between the anode opening area and the non-anode opening area can be eliminated. Specifically, the insulating layer 130 remaining after grinding may serve as a pixel defining layer. After the anode preparation is completed, an organic light emitting layer is typically formed on the surface of the conductive layer 140 remote from the substrate 110; and then manufacturing a common cathode structure on the surface of the organic light-emitting layer away from the anode. In the prior art, as shown in fig. 1, after the etching of the anode structure is completed, the shape angle of the side wall is relatively steep, and the thickness of the organic layer light-emitting layer is relatively small, generally about 100 nm. Then, after a thin organic light-emitting layer is deposited, the side wall morphology angle of the gap part of the adjacent anode is still steeper, the step difference between the anode opening area and the non-anode opening area is large, thus the metal cathode fault is caused in the subsequent evaporation, and poor product display is caused. In the present embodiment, the risk of cathode breakage can be effectively reduced by having the remaining insulating layer 130 and the remaining conductive layer 140 on the same plane through the grinding process.
With continued reference to fig. 4, the sum of the thickness d3 of the conductive layer 140 and the thickness d2 of the anode pattern 121 may be less than the thickness d1 of the insulating layer 130 before polishing, as an option, based on the above embodiments. This arrangement ensures that the conductive layer 140 outside the anode opening 131 is removed entirely and the conductive layer 140 inside the anode opening 131 remains during the polishing process.
On the basis of the above embodiments, the thickness d1 of the insulating layer 130 before polishing is optionally 1.5 to 2 times, preferably 1.5 times, the thickness d2 of the anode pattern 121. By the arrangement, enough thickness margin can be provided, so that after the conductive layer 140 is formed, the conductive layer 140 outside the anode opening 131 can be removed by adopting a grinding process, and the conductive layer inside the anode opening 131 is not lost, so that the anode performance is ensured; and the waste of the material of the insulating layer 130 can be reduced.
Alternatively, the material of the conductive layer 140 is Indium TiN Oxide (ITO) or titanium nitride (TiN) based on the above embodiments. Among them, the ITO material has better work function and transmittance than TiN material, so that the conductive layer 140 using ITO as the anode top layer is preferably in contact with the organic light emitting layer.
Alternatively, the insulating layer 130 may be an inorganic thin film or an organic thin film on the basis of the above embodiments; an inorganic thin film is preferable, for example, the insulating layer 130 is made of silicon nitride or silicon oxide material, so as to avoid the influence that the organic material may have on the organic light emitting layer.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.
Claims (9)
1. A method of making an OLED anode comprising:
forming an anode pattern on the surface of the substrate;
forming an insulating layer on a surface of the anode pattern away from the substrate; the insulating layer includes an anode opening exposing at least a portion of the anode pattern;
forming a conductive layer on a surface of the anode pattern away from the substrate, the conductive layer covering the insulating layer and the exposed anode pattern;
removing the conductive layer outside the anode opening and removing part of the insulating layer by adopting a grinding process;
the surface of the insulating layer which is remained after grinding and is far away from the substrate is flush with the surface of the conductive layer which is remained after grinding and is far away from the anode pattern.
2. The method of claim 1, wherein the grinding process comprises: chemical mechanical polishing process.
3. The method of manufacturing an OLED anode according to claim 1, wherein the thickness of the insulating layer before grinding is 1.5-2 times the thickness of the anode pattern.
4. A method of preparing an OLED anode according to claim 3, wherein the thickness of the insulating layer before milling is 1.5 times the thickness of the anode pattern.
5. The method of claim 1, wherein the sum of the thicknesses of the conductive layer and the anode pattern is less than the thickness of the insulating layer before grinding.
6. The method of claim 1, wherein the process of forming the conductive layer comprises: and (5) sputtering.
7. The method for preparing an OLED anode according to claim 1, wherein the insulating layer is an inorganic thin film or an organic thin film.
8. The method of claim 1, wherein the process of forming the insulating layer comprises: a thin film process;
the process of forming the anode opening includes: and (5) an exposure and development process.
9. The method for preparing an OLED anode according to claim 1, wherein the anode pattern is made of aluminum or silver;
the material of the conductive layer is indium tin oxide or titanium nitride.
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| CN114010198A (en) * | 2021-11-11 | 2022-02-08 | 杭州电子科技大学温州研究院有限公司 | High-density self-insulating flexible microneedle electrode and preparation method thereof |
| CN114497430A (en) * | 2022-01-20 | 2022-05-13 | 昆山梦显电子科技有限公司 | Method for preparing anode structure of silicon-based OLED |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1710704A (en) * | 2004-06-18 | 2005-12-21 | 夏普株式会社 | Semiconductor device fabrication method |
| KR20060104699A (en) * | 2005-03-31 | 2006-10-09 | 삼성에스디아이 주식회사 | Electron emission device and method of manufacturing the same |
| CN101189724A (en) * | 2005-06-03 | 2008-05-28 | E.I.内穆尔杜邦公司 | Electronic device including a first workpiece, a second workpiece, and a conductive member substantially directly bonded to the first and second workpieces |
| CN102629671A (en) * | 2012-04-25 | 2012-08-08 | 上海大学 | Preparation method of organic electroluminescent device of silicon base micro display |
| CN108496260A (en) * | 2015-10-26 | 2018-09-04 | Oti照明公司 | Method for patterned surface overlying strata and the device including patterning coating |
| CN109888120A (en) * | 2018-12-29 | 2019-06-14 | 昆山维信诺科技有限公司 | OLED display and its manufacturing method |
| CN110809807A (en) * | 2017-07-07 | 2020-02-18 | 东丽株式会社 | Method for manufacturing conductive film, method for manufacturing field effect transistor using same, and method for manufacturing wireless communication device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050087513A1 (en) * | 2003-10-09 | 2005-04-28 | Tsung-Neng Liao | Method of forming transparent conductive layer on substrate |
| CN102007585B (en) * | 2008-04-18 | 2013-05-29 | 株式会社半导体能源研究所 | Thin film transistor and method for manufacturing the same |
| US10164120B2 (en) * | 2015-05-28 | 2018-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
-
2021
- 2021-07-19 CN CN202110814659.0A patent/CN113540389B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1710704A (en) * | 2004-06-18 | 2005-12-21 | 夏普株式会社 | Semiconductor device fabrication method |
| KR20060104699A (en) * | 2005-03-31 | 2006-10-09 | 삼성에스디아이 주식회사 | Electron emission device and method of manufacturing the same |
| CN101189724A (en) * | 2005-06-03 | 2008-05-28 | E.I.内穆尔杜邦公司 | Electronic device including a first workpiece, a second workpiece, and a conductive member substantially directly bonded to the first and second workpieces |
| CN102629671A (en) * | 2012-04-25 | 2012-08-08 | 上海大学 | Preparation method of organic electroluminescent device of silicon base micro display |
| CN108496260A (en) * | 2015-10-26 | 2018-09-04 | Oti照明公司 | Method for patterned surface overlying strata and the device including patterning coating |
| CN110809807A (en) * | 2017-07-07 | 2020-02-18 | 东丽株式会社 | Method for manufacturing conductive film, method for manufacturing field effect transistor using same, and method for manufacturing wireless communication device |
| CN109888120A (en) * | 2018-12-29 | 2019-06-14 | 昆山维信诺科技有限公司 | OLED display and its manufacturing method |
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