CN113540145A - Light emitting device, manufacturing method of light emitting device and display device - Google Patents
Light emitting device, manufacturing method of light emitting device and display device Download PDFInfo
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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Abstract
The invention provides a light-emitting device, a manufacturing method of the light-emitting device and a display device, wherein the light-emitting device comprises a transparent substrate, a plurality of light-emitting chips, a planarization layer, a connecting circuit, a device electrode and a packaging layer; the plurality of light-emitting chips are arranged on the top surface of the transparent substrate, and any light-emitting chip is provided with a chip electrode positioned on the top surface; at least one of the plurality of light-emitting chips is a first light-emitting chip, and the first light-emitting chip is directly processed and molded on the top surface of the transparent substrate; the planarization layer is arranged on the non-light-emitting chip arrangement position on the top surface of the transparent substrate, the top surface of the planarization layer is flush with the top surface of the chip electrode, and the top surface of the planarization layer and the top surface of the chip electrode are combined to form a flat surface; the connecting circuit is arranged on the flat surface, and the chip electrode is connected with the connecting circuit; the device electrode is arranged on the connecting circuit and is connected with the connecting circuit; the packaging layer is used for packaging the connecting circuit and the device electrode, and the top surface of the device electrode is exposed out of the packaging layer.
Description
Technical Field
The invention relates to the field of display devices, in particular to a light-emitting device, a manufacturing method of the light-emitting device and a display device.
Background
With the increasing requirements of ultra-high-definition display devices on pixels, the pixel pitch is smaller and smaller, and the size of a corresponding light-emitting chip is smaller and smaller. With the continuous reduction of the size of the light-emitting chip, the size of the light-emitting chip electrode and the corresponding substrate bonding pad are also continuously reduced, and in order to meet the product design requirements, the requirements on the manufacturing precision of the substrate and the alignment precision of the light-emitting chip electrode and the substrate bonding pad are higher and higher.
In the prior art, the light-emitting chip and the substrate bonding pad are easy to have abnormal alignment in the manufacturing process, which causes poor bonding between the light-emitting chip and the substrate bonding pad, and makes the light-emitting chip difficult to be directly mounted on the substrate, thereby affecting the popularization and application of the display device.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention also provides a light-emitting device, a manufacturing method of the light-emitting device and a display device.
Correspondingly, the invention provides a light-emitting device which is characterized by comprising a transparent substrate, a plurality of light-emitting chips, a planarization layer, a connecting circuit, a device electrode and a packaging layer;
the plurality of light-emitting chips are arranged on the top surface of the transparent substrate, and any one of the light-emitting chips is provided with a chip electrode positioned on the top surface;
at least one of the plurality of light-emitting chips is a first light-emitting chip, and the first light-emitting chip is directly processed and molded on the top surface of the transparent substrate;
the planarization layer is arranged on the non-light-emitting chip arrangement position on the top surface of the transparent substrate; the top surface of the planarization layer is flush with the top surface of the chip electrode, and the top surface of the planarization layer and the top surface of the chip electrode are combined to form a flat surface;
the connecting circuit is arranged on the flat surface, and the chip electrode is connected with the connecting circuit;
the device electrode is arranged on the connecting circuit and is connected with the connecting circuit;
the packaging layer encapsulates the connecting circuit and the device electrodes, and the top surfaces of the device electrodes are exposed out of the packaging layer.
In an alternative embodiment, at least one of the plurality of light emitting chips is a second light emitting chip, and the second light emitting chip is disposed on the top surface of the transparent substrate based on an adhesive layer.
In an optional embodiment, the light emitting device further includes a wavelength conversion layer embedded in the transparent substrate, and the wavelength conversion layer is disposed opposite to the corresponding light emitting chip.
In an alternative embodiment, the light emitting device further includes a retaining wall surrounding the wavelength conversion layer.
In an optional embodiment, the light emitting device further includes a heat dissipation channel disposed in the planarization layer and contacting the corresponding retaining wall;
and the heat dissipation channel is filled with heat conduction materials.
In an optional embodiment, the light emitting device further comprises a heat dissipation line and a heat dissipation bump;
the heat dissipation circuit is arranged on the flat surface and is connected with the heat dissipation channel;
the heat dissipation bump is arranged on the heat dissipation circuit, the packaging layer encapsulates the heat dissipation circuit and the heat dissipation bump, and the top surface of the heat dissipation bump is exposed out of the packaging layer.
Correspondingly, the invention also provides a manufacturing method of the light-emitting device, which is used for manufacturing the light-emitting device, and comprises the following steps:
processing the light-emitting chip: selecting a transparent substrate with a preset size based on a light-emitting device structure, and processing a first light-emitting chip on the top surface of the transparent substrate according to the arrangement position of the first light-emitting chip; in the case that the light emitting device includes a second light emitting chip, fixing the second light emitting chip on a preset position of the top surface of the transparent substrate based on an adhesive layer;
and (3) processing a planarization layer: processing a planarization layer between any two adjacent light-emitting chips on the top surface of the transparent substrate, wherein the top surface of the planarization layer is parallel to the top surface of the chip electrode, and the top surface of the planarization layer and the top surface of the chip electrode are combined to form a flat surface;
and (3) connecting circuit processing: processing a connecting circuit on the flat surface based on a preset connecting circuit structure, wherein the chip electrode is connected with the connecting circuit;
processing of device electrodes: processing device electrodes at preset positions of the connecting lines, wherein the device electrodes are connected with the connecting lines;
packaging the light-emitting device: and encapsulating the connecting lines and the device electrodes based on an encapsulating material and keeping the top surfaces of the device electrodes exposed.
In an alternative embodiment, the method for fabricating a light emitting device further includes the steps of:
processing a wavelength conversion layer: and forming a filling hole on the bottom surface of the transparent substrate corresponding to the position of the light-emitting chip, and filling a wavelength conversion material into the filling hole to form a wavelength conversion layer.
In an alternative embodiment, the method for fabricating a light emitting device further includes the steps of:
processing the retaining wall: and processing a retaining wall on the side wall of the filling hole by using a light reflection material or a light absorption material, and filling the wavelength conversion material into the surrounding area of the retaining wall to form the wavelength conversion layer.
An optional embodiment, wherein the method of fabricating a light emitting device further comprises:
processing a heat dissipation channel: and reserving a through hole in the planarization layer, filling a heat conduction material into the through hole to form a heat dissipation channel, wherein the heat dissipation channel is in contact with the corresponding retaining wall.
In an alternative embodiment, the method for fabricating a light emitting device further includes the steps of:
processing a heat dissipation line: processing a heat dissipation circuit on the flat surface at a position corresponding to the heat dissipation channel, wherein the heat dissipation circuit is connected with the heat dissipation through hole;
processing a heat dissipation lug: and processing a heat dissipation lug on the heat dissipation circuit, packaging the heat dissipation circuit and the heat dissipation lug based on packaging materials, and keeping the top surface of the heat dissipation lug exposed.
Correspondingly, the invention also provides a display device comprising the light-emitting device.
In summary, the invention provides a light emitting device, a method for manufacturing the light emitting device and a display device, the light emitting device avoids the bonding process of the light emitting chip and the transparent substrate by manufacturing the connecting circuit and the device electrode on the light emitting chip, and at least one light emitting chip in the light emitting device is directly formed on the transparent substrate, so that the transfer process of part of the light emitting chips is omitted, and the manufacturing yield of the light emitting device is improved; by using the wavelength conversion layer and the retaining wall arranged in the transparent substrate, light crosstalk among the light-emitting devices can be prevented, and the color development effect of the light-emitting devices is improved; the design of the heat dissipation channel for the retaining wall can well perform auxiliary heat dissipation on the wavelength conversion layer, reduce the working temperature of the wavelength conversion layer and prolong the service life of the light-emitting device.
Drawings
Fig. 1 is a schematic cross-sectional view of a light-emitting device according to a first embodiment of the present invention;
fig. 2 is a schematic cross-sectional view of a light-emitting device according to a second embodiment of the present invention;
fig. 3 is a schematic cross-sectional view of a light-emitting device according to a third embodiment of the present invention;
fig. 4 is a schematic cross-sectional view of a light-emitting device according to a fourth embodiment of the present invention;
fig. 5 is a schematic cross-sectional view of a light-emitting device according to a fifth embodiment of the present invention;
fig. 6 is a schematic cross-sectional view of a light-emitting device according to a sixth embodiment of the present invention;
fig. 7 is a flowchart of a method for manufacturing a light emitting device according to an embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
fig. 1 shows a schematic cross-sectional structure of a light-emitting device according to an embodiment of the present invention.
The embodiment of the invention provides a light-emitting device, which comprises a transparent substrate 1, a plurality of light-emitting chips, a planarization layer 2, a connecting circuit 7, a device electrode 4 and a packaging layer 3;
the plurality of light-emitting chips are arranged on the top surface of the transparent substrate 1, and any one of the light-emitting chips is provided with a chip electrode 6 positioned on the top surface; it should be noted that, because the transparent substrate 1 is disposed on the light-emitting surface of the light-emitting chip, the light emitted from the light-emitting chip is emitted to the outside through the bottom surface of the transparent substrate 1. At least one of the plurality of light emitting chips is a first light emitting chip 5, and the first light emitting chip 5 is directly processed and molded on the top surface of the transparent substrate 1; in fact, the first light emitting chip 5 is a flip light emitting chip according to the relative position relationship between the light emitting direction of the first light emitting chip 5 and the chip electrode 6, and in a specific process, the process of the first light emitting chip 5 can be directly performed on the transparent substrate 1 according to the prior art.
The planarization layer 2 is arranged on the non-light-emitting chip arrangement position on the top surface of the transparent substrate 1; the top surface of the planarization layer 2 is flush with the top surface of the chip electrode 6, and the top surface of the planarization layer 2 and the top surface of the chip electrode 6 are combined to form a flat surface; the arrangement of the flat surface is beneficial to the processing of the connecting circuit 7, and the connecting circuit 7 is ensured to be formed on the same plane and is not easy to break.
The connecting line 7 is arranged on the flat surface, the chip electrode 6 is connected with the connecting line 7, and the connection of the chip electrode 6 and the connecting line 7 represents that the chip electrode 6 is electrically connected with the connecting line 7; the device electrode 4 is disposed on the connection line 7, the device electrode 4 is connected to the connection line 7, and the connection of the device electrode 4 to the connection line 7 means that the device electrode 4 is electrically connected to the connection line 7, and accordingly, the light emitting chip in the light emitting device is driven correspondingly by the device electrode 4. It should be noted that, in all the embodiments of the present invention, the connection line 7 and the device electrode 4 are only used for naming the structure, and do not indicate the specific structure and the specific connection form thereof, and in the specific implementation, the specific structure and the specific connection form of the connection line 7 and the device electrode 4 can be designed according to the actual requirement, and therefore, the connection line 7 and the device electrode 4 will not be further described.
The packaging layer 3 encapsulates the connection circuit 7 and the device electrodes 4, and the top surfaces of the device electrodes 4 are exposed out of the packaging layer 3 to ensure that the device electrodes 4 can be externally connected.
Specifically, in the light emitting device provided by the embodiment of the present invention, the plurality of light emitting chips are the first light emitting chips 5, and the first light emitting chips 5 are directly molded on the transparent substrate 1 and packaged as the light emitting device for direct use, so that a light emitting chip transfer process can be omitted, and good effects are provided for improving the yield of the light emitting device and reducing the production cost of the light emitting device.
Example two:
fig. 2 shows a schematic cross-sectional structure of a light-emitting device according to an embodiment of the present invention.
On the basis of the first embodiment, at least one of the plurality of light emitting chips is a second light emitting chip 8, and the second light emitting chip 8 is disposed on the top surface of the transparent substrate 1 based on the adhesive layer 9.
Specifically, the second light emitting chip 8 is a light emitting chip processed outside the transparent substrate 1, and in order to facilitate fixing of the second light emitting chip 8 on the transparent substrate 1, in the embodiment of the present invention, an adhesive layer 9 is pre-processed on the transparent substrate 1, and the surface of the adhesive layer 9 has a certain viscosity, and can be used to fix the second light emitting chip 8 transferred onto the adhesive layer 9. It should be noted that, in the embodiment of the present invention, the adhesive layer 9 is disposed between the transparent substrate 1 and the second chip 8, and in order to ensure the light emission of the second chip 8, the adhesive layer 9 has light transmittance. In addition, in the embodiment of the present invention, the first light emitting chip 5 and the second light emitting chip 8 are both light emitting chips, and are distinguished by different names only due to different molding modes, so that the number of the first light emitting chip 5 and the second light emitting chip 8 can be set reasonably according to processing conditions and product requirements in actual production.
Example three:
fig. 3 shows a schematic cross-sectional structure of a light-emitting device according to an embodiment of the present invention.
On the basis of the first embodiment, the light emitting device further includes a wavelength conversion layer 10, the wavelength conversion layer 10 is embedded in the transparent substrate 1, and the position where the wavelength conversion layer 10 is disposed is opposite to the corresponding light emitting chip.
The wavelength conversion layer 10 is mainly used for changing the color of the light emitted from the light emitting chip at the corresponding position according to the actual production requirement to meet the light emitting requirement of a specific form, and the wavelength conversion layer 10 is generally composed of a wavelength conversion material, which may be a quantum dot material or a fluorescent powder material.
Example four:
fig. 4 shows a schematic cross-sectional structure of a light-emitting device according to an embodiment of the present invention.
On the basis of the third embodiment, the light emitting device further includes a retaining wall 11, and the retaining wall 11 is disposed on the side surface of the wavelength conversion layer 10 in a surrounding manner. Specifically, in the embodiment of the present invention, the retaining wall 11 made of the light reflective material or the light absorbing material is disposed at the periphery of the wavelength conversion layer 10, and the retaining wall 11 mainly ensures that the wavelength conversion layer 10 is not erroneously excited by the non-corresponding light emitting chip.
Example five:
fig. 5 shows a schematic cross-sectional structure of a light-emitting device according to an embodiment of the present invention.
On the basis of the fourth embodiment, the light emitting device further includes heat dissipation channels 12, and the heat dissipation channels 12 are disposed in the planarization layer 2 and are in contact with the corresponding retaining walls 11; the heat dissipation channel 12 is filled with a heat conductive material.
Specifically, when the wavelength conversion layer 10 is excited by the light emitting chip, a large amount of heat is generated, and the heat is concentrated at the contact position with the light emitting chip, referring to fig. 5, through the design of the heat dissipation channel 12, after the heat of the wavelength conversion layer 10 is transferred to the retaining wall 11, the retaining wall 11 can transfer the heat to the encapsulation layer 3 far away from the transparent substrate 1 through the heat dissipation channel 12, and the structure of the whole light emitting device is fully utilized to assist the heat dissipation.
Further, referring to fig. 5, the light emitting device further includes a heat dissipation line 13 and a heat dissipation bump 14 corresponding to the structure of the retaining wall 11 and the structure of the heat dissipation channel 12; the heat dissipation circuit 13 is arranged on the flat surface, and the heat dissipation circuit 13 is connected with the heat dissipation channel 12; the heat dissipation bump 14 is disposed on the heat dissipation circuit 13, the package layer 3 encapsulates the heat dissipation circuit 13 and the heat dissipation bump 14, and a top surface of the heat dissipation bump 14 is exposed out of the package layer 3.
The heat dissipation circuit 13 and the heat dissipation bump 14 are designed to directly transfer the heat of the retaining wall 11 to the surface of the light emitting device; in specific implementation, since the side where the device electrode 4 is disposed, that is, the side where the package layer 3 is located, is a mounting surface, similar to the embodiment of contact welding of the device electrode 4 and an external pad, the heat dissipation bump 14 may also directly contact with the external pad, so as to achieve the purpose of enhancing heat dissipation of the wavelength conversion layer.
Example six:
fig. 6 shows a schematic cross-sectional structure of a light-emitting device according to an embodiment of the present invention.
Based on the second embodiment, the wavelength conversion layer 10, the retaining walls 11, the heat dissipation channels 12, the heat dissipation lines 13 and the heat dissipation bumps 14 are added based on the similar implementation manner as the fifth embodiment. Specifically, in the embodiment of the present invention, the first light emitting chip 5 is directly formed on the transparent substrate 1, the second light emitting chip 8 is fixed on the transparent substrate 1 based on the bonding layer 9, and accordingly, the transparent substrate 1 is provided with the corresponding wavelength conversion layer 10 at the position corresponding to the first light emitting chip 5 and the second light emitting chip 8 and the retaining wall 11 is provided outside the wavelength conversion layer 10; a heat dissipation channel 12, a heat dissipation line 13 and a heat dissipation bump 14 are provided corresponding to the retaining wall 11 to dissipate heat to the outside.
The first to sixth embodiments mainly address the implementation structures of the component structures in the light emitting device provided by the present invention, and in the specific implementation, on the basis of combining the first to sixth embodiments, the following description will be made with respect to the light emitting form of the whole light emitting device in terms of seventh to ninth embodiments.
Example seven:
specifically, referring to fig. 1 of the drawings, in the embodiment of the present invention, the light emitting device has three first light emitting chips 5, and the types of the light emitting chips in the light emitting device are all the first light emitting chips 5.
Example eight:
specifically, referring to fig. 2 of the drawings, in the embodiment of the present invention, the light emitting device has one first light emitting chip 5 and two second light emitting chips 8.
Example nine:
specifically, if it is necessary to satisfy the monochrome display of the light emitting device on the basis of the seventh embodiment and the eighth embodiment, the light emission colors of the three light emitting chips are the same; if full-color display of the light-emitting device is required to be met, the light-emitting colors of the three light-emitting chips are different from each other, and the three light-emitting chips directly adopt an implementation form of matching a blue light-emitting chip, a red light-emitting chip and a green light-emitting chip to realize the full-color display of the light-emitting device; or the light emitting colors of the three light emitting chips are the same, and full color display of the light emitting device is realized by changing the display colors of at least two of the light emitting chips in the form of arranging the wavelength conversion layer on the transparent substrate.
Example ten:
fig. 7 shows a flowchart of a method for manufacturing a light emitting device according to an embodiment of the present invention.
The embodiment of the invention provides a manufacturing method of a light-emitting device, which comprises the following steps:
s101: processing a light-emitting chip;
selecting a transparent substrate 1 with a preset size based on a light-emitting device structure, and processing a first light-emitting chip 5 on the top surface of the transparent substrate 1 according to the arrangement position of the first light-emitting chip 5; in the case where the light emitting device includes a second light emitting chip 8, fixing the second light emitting chip 8 at a predetermined position on the top surface of the transparent substrate 1 based on an adhesive layer 9;
specifically, the type of the light emitting chip according to the embodiment of the present invention includes a first light emitting chip 5 and a second light emitting chip 8, wherein the first light emitting chip 5 is a light emitting chip directly processed on the transparent substrate 1, and the second light emitting chip 8 is a light emitting chip transferred from the outside and fixed on the transparent substrate 1.
Specifically, in this step, based on a preset first light emitting chip 5 structure, a required first light emitting chip 5 is processed at a preset position on the top surface of the transparent substrate 1 by a processing method of epitaxial layer growth; for the arrangement of the second light emitting chip 8, the adhesive layer 9 is firstly processed on the transparent substrate 1, and then the second light emitting chip 8 is transferred to a predetermined position of the adhesive layer 9 from the outside.
Specifically, any one of the light emitting chips has a chip electrode 6 on the top surface;
specifically, in the embodiment of the present invention, the first light emitting chip 5 is formed by growing an LED epitaxial wafer; the basic principle of LED epitaxial wafer growth is that a specific single crystal thin film is grown on a growth substrate heated to a suitable temperature, and gaseous substances In, Ga, AI, and P are controllably delivered onto the surface of the growth substrate, specifically, In the embodiment of the present invention, the growth substrate is a transparent substrate 1, and the transparent substrate 1 may be a sapphire substrate, a CaN substrate, a Si substrate, a SiC substrate, and the like. In a specific implementation, a specific epitaxial layer (i.e., epitaxial wafer) structure is determined according to a preset type of the first light emitting chip 5, and then the required first light emitting chip 5 is processed on the top surface of the transparent substrate 1 in one operation process according to the set number and the set position of the first light emitting chip 5 in the light emitting device.
In addition, there is a difference in the incoming material structure or the post-processing structure of the transparent substrate 1 according to the structure of the light emitting device, for example, a wavelength conversion layer 10, a retaining wall 11 structure, etc. are embedded in the transparent substrate 1, and the following description will be directed to the light emitting device with a specific structure.
Note that the incoming material structure or the actual processing structure of the transparent substrate 1 does not affect the processing of the light emitting chip, and if a structure such as a through hole needs to be provided on the transparent substrate 1 and the relevant structure interferes with the molding position of the light emitting chip, the processing of the structure such as the through hole can be performed after the light emitting chip is molded.
Specifically, after the light emitting chip is processed, the light emitting chip itself has a chip electrode 6 for external power supply control.
S102: and processing of the planarization layer 2:
processing a planarization layer 2 between any two adjacent light-emitting chips on the top surface of the transparent substrate 1, wherein the top surface of the planarization layer 2 is flush with the top surface of the chip electrode 6, and the top surface of the planarization layer 2 and the top surface of the chip electrode 6 are combined to form a flat surface;
specifically, the planarization layer 2 serves to planarize the top surface of the chip electrodes 6 distributed in a scattered manner, so as to allow the subsequent connection lines 7 to be processed for adhesion. Specifically, according to the difference of the manufacturing materials of the planarization layer 2, the planarization layer 2 can have corresponding additional functions, for example, for the characteristics of the setting position of the planarization layer 2 (processing between the light emitting chips), if the material of the planarization layer 2 adopts a light absorbing material, the light emitting device is observed on the observation surface of the light emitting device (i.e. the bottom surface of the transparent substrate 1), due to the setting of the light absorbing material, the planarization layer 2 between the light emitting chips does not emit light, the light emitting chips are separated from each other based on the planarization layer 2, the phenomenon of crosstalk or mixing of light emitted by the light emitting chips in the side direction is avoided, and the contrast of the light emitting device is improved.
S103, connecting the processing of the wire 7:
processing a connecting line 7 on the flat surface based on a preset connecting line 7 structure, wherein the chip electrode 6 is connected with the connecting line 7;
specifically, the connecting circuit 7 is processed on the flat surface by processing modes such as evaporation, sputtering, spraying, printing and the like according to a preset structure of the connecting circuit 7, and the connecting circuit 7 is connected with the chip electrode 6; in specific implementations, the connection line 7 may be a single layer of metal, such as Au, Cu; the connecting circuit 7 can also be a combination of multiple metal layers, such as Cr, Ti, Cu, Au, etc.; specifically, a plurality of light emitting chips are enclosed in the planarization layer 2, and according to the function of the light emitting device, the circuit connection relationship between the plurality of light emitting chips and the outside are designed as needed. Specifically, the flat surface includes the chip electrode 6 and the top surface region of the planarization layer 2, and when the connection line 7 is processed, the connection between the connection line 7 and the chip electrode 6 is the electrical connection between the connection line 7 and the chip electrode 6.
It should be noted that the connection circuit 7 mainly serves as a bridge for electrically connecting the light emitting chip and the outside, the specific structure of the connection circuit 7 needs to be designed according to the required function of the light emitting device, and the specific structure is not shown in the diagram.
S104: processing of the device electrode 4:
processing a device electrode 4 at a preset position of the connecting line 7, wherein the device electrode 4 is connected with the connecting line 7;
specifically, connecting line 7 still needs to be connected with the outside equipment of light emitting device, and is corresponding, in order to realize this function, need carry out secondary operation using similar technology on the preset position of connecting line 7, process out device electrode 4 on connecting line 7, when processing connecting device electrode 4, device electrode 4 is the electric connection of device electrode 4 and connecting line 7 promptly with connecting line 7's being connected. Specifically, the height of the device electrode 4 is higher than that of the connection circuit 7, so that the device electrode 4 can be correspondingly exposed during subsequent packaging, and connection of external equipment is guaranteed.
S105: packaging a light emitting device;
and forming an encapsulation layer 3 on the flat surface by encapsulation of an encapsulation material, wherein the encapsulation layer 3 encapsulates the connecting circuit 7 and the device electrode 4 and keeps the top surface of the device electrode 4 exposed.
Specifically, the encapsulation layer 3 may be manufactured by mold pressing or injection molding, and the specific material may be epoxy resin, silicone resin, or the like, which may be transparent, black, or the like, and functions to protect the circuit layer 7 and support and encapsulate the device electrode 4.
Specifically, the method for manufacturing the light-emitting device provided by the embodiment of the invention directly manufactures the connecting circuit and the device electrode on the side of the chip electrode through a semiconductor process (evaporation/sputtering and the like), thereby avoiding the bonding procedure of the light-emitting chip and the transparent substrate, reducing the processing difficulty of the light-emitting device and improving the yield of the light-emitting device; in addition, a plurality of light-emitting chips are directly processed on the same transparent substrate, and the light-emitting chips and the transparent substrate are integrally formed, so that a plurality of light-emitting chip transfer procedures are omitted, especially procedures when a light-emitting device with a large number of light-emitting chips with high setting density is processed, the processing difficulty of the light-emitting device is further reduced, and the yield of the light-emitting device is improved.
Example eleven:
on the basis of the tenth embodiment, referring to fig. 5 or fig. 6 of the accompanying drawings, according to the specific structural difference of the light emitting device, the method for manufacturing the light emitting device further includes the following steps:
Specifically, the arrangement of the wavelength conversion layer 10 on the transparent substrate 1 includes, but is not limited to, the embodiment defined in this step, and specifically, the wavelength conversion material is a material that is easily oxidized, and therefore, the sealing performance of the working environment thereof must be ensured during implementation, and accordingly, the embodiment of the present invention employs a method in which after the wavelength conversion material is filled into the filling hole, the sealing protection is performed on the upper side of the filling hole by the light emitting chip and the planarization layer 2, and the sealing protection is performed on the lower side of the filling hole by the sealing material such as the water blocking oxygen material forming the protection layer 15 (not shown).
In a specific embodiment, the wavelength conversion layer 10 may be processed at the stage of loading the transparent substrate 1. Specifically, when the transparent substrate 1 is supplied, a filling hole may be opened in the bottom surface of the transparent substrate 1, and the wavelength conversion layer 10 may be formed by filling the wavelength conversion material into the filling hole, and in order to protect the wavelength conversion layer 10, a sealing material forming protective layer 15 (not shown) such as a water-blocking oxygen material may be further filled in the filling hole to protect and seal the wavelength conversion layer 10 in the filling hole.
Example twelve:
further, on the basis of the eleventh embodiment, referring to fig. 5 or fig. 6 of the drawings, the method for manufacturing a light emitting device further includes the following steps:
and (3) processing the retaining wall 11: and processing a retaining wall 11 on the side wall of the filling hole by using a light reflection material or a light absorption material, and filling the wavelength conversion material into the surrounding area of the retaining wall 11 to form the wavelength conversion layer 10.
Specifically, in order to ensure that the wavelength conversion layer 10 is not erroneously excited by the non-corresponding light emitting chip, for the actual processing, a desired retaining wall 11 structure is first processed on the sidewall of the filling hole by using a light reflective material or a light absorbing material, and then the wavelength conversion material is filled in the surrounding region of the retaining wall 11 structure to obtain the desired wavelength conversion layer 10 structure.
Example thirteen:
further, on the basis of the twelfth embodiment, referring to fig. 5 or fig. 6 of the drawings, the method for manufacturing a light emitting device further includes the following steps:
and (3) processing of the heat dissipation channel 12: a through hole is reserved in the planarization layer 2, a heat conduction material is filled in the through hole to form a heat dissipation channel 12, and the heat dissipation channel 12 is arranged in contact with the corresponding retaining wall 11. Specifically, for practical processing, a through hole may be reserved when the planarization layer 2 is processed, and the connection line 7 is processed by using the same processing technology as the connection line 7, and the through hole is filled with a heat conductive metal by processing methods such as evaporation, sputtering, spraying, printing, and the like, so as to obtain a required heat dissipation channel 12 structure.
Example fourteen:
further, on the basis of the thirteenth embodiment, referring to fig. 5 or fig. 6, the method for manufacturing a light emitting device further includes the following steps:
and (3) processing a heat dissipation circuit 13: processing a heat dissipation line 13 on the flat surface at a position corresponding to the heat dissipation channel 12, wherein the heat dissipation line 13 is connected with the heat dissipation channel 12;
and (3) processing the heat dissipation bump 14: and processing a heat dissipation bump 14 on the heat dissipation circuit 13, and packaging the heat dissipation circuit 13 and the heat dissipation bump 14 based on packaging materials and keeping the top surface of the heat dissipation bump 14 exposed.
Specifically, in order to reduce the number of processing steps, the connection lines 7 and the device electrodes 4 may be formed together according to a predetermined structure of the heat dissipation lines 13 and the heat dissipation bumps 14, respectively.
Example fifteen:
correspondingly, the embodiment of the invention also provides a display device which comprises the light-emitting device.
The invention provides a light-emitting device, a manufacturing method of the light-emitting device and a display device, wherein the light-emitting device avoids the bonding process of a light-emitting chip and a transparent substrate by manufacturing a connecting circuit and a device electrode on the light-emitting chip, and at least one light-emitting chip in the light-emitting device is directly formed on the transparent substrate, so that the transfer process of part of the light-emitting chip is omitted, and the manufacturing yield of the light-emitting device is improved; by using the wavelength conversion layer and the retaining wall arranged in the transparent substrate, light crosstalk among the light-emitting devices can be prevented, and the color development effect of the light-emitting devices is improved; the design of the heat dissipation channel for the retaining wall can well perform auxiliary heat dissipation on the wavelength conversion layer, reduce the working temperature of the wavelength conversion layer and prolong the service life of the light-emitting device.
The light emitting device, the method for manufacturing the light emitting device, and the display device provided by the embodiments of the present invention are described in detail above, and the principles and embodiments of the present invention are explained in detail herein by applying specific examples, and the description of the embodiments above is only used to help understanding the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (12)
1. A light-emitting device is characterized by comprising a transparent substrate, a plurality of light-emitting chips, a planarization layer, a connecting circuit, a device electrode and a packaging layer;
the plurality of light-emitting chips are arranged on the top surface of the transparent substrate, and any one of the light-emitting chips is provided with a chip electrode positioned on the top surface;
at least one of the plurality of light-emitting chips is a first light-emitting chip, and the first light-emitting chip is directly processed and molded on the top surface of the transparent substrate;
the planarization layer is arranged on the non-light-emitting chip arrangement position on the top surface of the transparent substrate; the top surface of the planarization layer is flush with the top surface of the chip electrode, and the top surface of the planarization layer and the top surface of the chip electrode are combined to form a flat surface;
the connecting circuit is arranged on the flat surface, and the chip electrode is connected with the connecting circuit;
the device electrode is arranged on the connecting circuit and is connected with the connecting circuit;
the packaging layer encapsulates the connecting circuit and the device electrodes, and the top surfaces of the device electrodes are exposed out of the packaging layer.
2. The light emitting device according to claim 1, wherein at least one of the plurality of light emitting chips is a second light emitting chip disposed on the top surface of the transparent substrate based on an adhesive layer.
3. The light-emitting device according to claim 1 or 2, further comprising a wavelength conversion layer provided embedded in the transparent substrate at a position opposite to the corresponding light-emitting chip.
4. The light-emitting device according to claim 3, further comprising a dam wall surrounding the wavelength-converting layer on a side surface thereof.
5. The light-emitting device according to claim 4, further comprising heat dissipation channels provided in the planarization layer and in contact with the corresponding retaining walls;
and the heat dissipation channel is filled with heat conduction materials.
6. The light-emitting device according to claim 5, further comprising a heat dissipation wire and a heat dissipation bump;
the heat dissipation circuit is arranged on the flat surface and is connected with the heat dissipation channel;
the heat dissipation bump is arranged on the heat dissipation circuit, the packaging layer encapsulates the heat dissipation circuit and the heat dissipation bump, and the top surface of the heat dissipation bump is exposed out of the packaging layer.
7. A method for manufacturing a light emitting device, for manufacturing the light emitting device according to any one of claims 1 to 6, comprising the steps of:
processing the light-emitting chip: selecting a transparent substrate with a preset size based on a light-emitting device structure, and processing a first light-emitting chip on the top surface of the transparent substrate according to the arrangement position of the first light-emitting chip; in the case that the light emitting device includes a second light emitting chip, fixing the second light emitting chip on a preset position of the top surface of the transparent substrate based on an adhesive layer;
and (3) processing a planarization layer: processing a planarization layer between any two adjacent light-emitting chips on the top surface of the transparent substrate, wherein the top surface of the planarization layer is parallel to the top surface of the chip electrode, and the top surface of the planarization layer and the top surface of the chip electrode are combined to form a flat surface;
and (3) connecting circuit processing: processing a connecting circuit on the flat surface based on a preset connecting circuit structure, wherein the chip electrode is connected with the connecting circuit;
processing of device electrodes: processing device electrodes at preset positions of the connecting lines, wherein the device electrodes are connected with the connecting lines;
packaging the light-emitting device: and encapsulating the connecting lines and the device electrodes based on an encapsulating material and keeping the top surfaces of the device electrodes exposed.
8. The light-emitting device manufacturing method according to claim 7, further comprising the steps of:
processing a wavelength conversion layer: and forming a filling hole on the bottom surface of the transparent substrate corresponding to the light-emitting chip, and filling a wavelength conversion material into the filling hole to form a wavelength conversion layer.
9. The light-emitting device manufacturing method according to claim 8, further comprising the steps of:
processing the retaining wall: and processing a retaining wall on the side wall of the filling hole by using a light reflection material or a light absorption material, and filling the wavelength conversion material into the surrounding area of the retaining wall to form the wavelength conversion layer.
10. The light-emitting device manufacturing method according to claim 9, further comprising the steps of:
processing a heat dissipation channel: and reserving a through hole in the planarization layer, filling a heat conduction material into the through hole to form a heat dissipation channel, wherein the heat dissipation channel is in contact with the corresponding retaining wall.
11. The light-emitting device manufacturing method according to claim 10, further comprising the steps of:
processing a heat dissipation line: processing a heat dissipation circuit on the flat surface at a position corresponding to the heat dissipation channel, wherein the heat dissipation circuit is connected with the heat dissipation through hole;
processing a heat dissipation lug: and processing a heat dissipation lug at a preset position of the heat dissipation line, packaging the heat dissipation line and the heat dissipation lug based on packaging materials, and keeping the top surface of the heat dissipation lug exposed.
12. A display device characterized by comprising the light-emitting device according to any one of claims 1 to 6.
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