CN113519031A - Conductive particle, conductive material, and connection structure - Google Patents
Conductive particle, conductive material, and connection structure Download PDFInfo
- Publication number
- CN113519031A CN113519031A CN202080017319.9A CN202080017319A CN113519031A CN 113519031 A CN113519031 A CN 113519031A CN 202080017319 A CN202080017319 A CN 202080017319A CN 113519031 A CN113519031 A CN 113519031A
- Authority
- CN
- China
- Prior art keywords
- conductive
- particles
- particle
- conductive particles
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002245 particle Substances 0.000 title claims abstract description 926
- 239000004020 conductor Substances 0.000 title claims description 73
- 239000000463 material Substances 0.000 claims abstract description 167
- 229910052751 metal Inorganic materials 0.000 claims abstract description 131
- 239000002184 metal Substances 0.000 claims abstract description 131
- 239000000758 substrate Substances 0.000 claims description 63
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 55
- 229920005989 resin Polymers 0.000 claims description 48
- 239000011347 resin Substances 0.000 claims description 48
- 229910052700 potassium Inorganic materials 0.000 claims description 34
- 239000011810 insulating material Substances 0.000 claims description 33
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 28
- 239000010931 gold Substances 0.000 claims description 25
- 229910052759 nickel Inorganic materials 0.000 claims description 25
- 229910052737 gold Inorganic materials 0.000 claims description 23
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 22
- 239000011230 binding agent Substances 0.000 claims description 19
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 15
- 229910052763 palladium Inorganic materials 0.000 claims description 15
- 229910052709 silver Inorganic materials 0.000 claims description 15
- 239000004332 silver Substances 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- 230000004931 aggregating effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 55
- 239000011162 core material Substances 0.000 description 51
- 239000010410 layer Substances 0.000 description 46
- 230000002776 aggregation Effects 0.000 description 31
- 238000004220 aggregation Methods 0.000 description 30
- 239000000178 monomer Substances 0.000 description 30
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 28
- 238000007747 plating Methods 0.000 description 27
- 239000011148 porous material Substances 0.000 description 25
- 238000009413 insulation Methods 0.000 description 21
- -1 polyethylene Polymers 0.000 description 18
- 239000000243 solution Substances 0.000 description 18
- 230000006835 compression Effects 0.000 description 17
- 238000007906 compression Methods 0.000 description 17
- 238000009826 distribution Methods 0.000 description 17
- 230000003287 optical effect Effects 0.000 description 15
- 230000005484 gravity Effects 0.000 description 13
- 239000000725 suspension Substances 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- 238000001465 metallisation Methods 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 9
- 238000007772 electroless plating Methods 0.000 description 9
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 239000006185 dispersion Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 238000007689 inspection Methods 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 8
- 238000001179 sorption measurement Methods 0.000 description 8
- 239000004840 adhesive resin Substances 0.000 description 7
- 229920006223 adhesive resin Polymers 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229920001577 copolymer Polymers 0.000 description 7
- 238000001914 filtration Methods 0.000 description 7
- 229910010272 inorganic material Inorganic materials 0.000 description 7
- 239000011147 inorganic material Substances 0.000 description 7
- 239000011259 mixed solution Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000011368 organic material Substances 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229920001187 thermosetting polymer Polymers 0.000 description 7
- 229920002554 vinyl polymer Polymers 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000012153 distilled water Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 229920005992 thermoplastic resin Polymers 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 239000011135 tin Substances 0.000 description 6
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical group C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 5
- 229910052753 mercury Inorganic materials 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 4
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 229920001940 conductive polymer Polymers 0.000 description 4
- 229920001971 elastomer Polymers 0.000 description 4
- 239000000839 emulsion Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910000510 noble metal Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 230000000379 polymerizing effect Effects 0.000 description 4
- 229920002223 polystyrene Polymers 0.000 description 4
- 229920002545 silicone oil Polymers 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- 229920001169 thermoplastic Polymers 0.000 description 4
- 239000004416 thermosoftening plastic Substances 0.000 description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 229920000877 Melamine resin Polymers 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 229920001400 block copolymer Polymers 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000008268 mayonnaise Substances 0.000 description 3
- 235000010746 mayonnaise Nutrition 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229940059574 pentaerithrityl Drugs 0.000 description 3
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- 238000000053 physical method Methods 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 230000003449 preventive effect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229920003048 styrene butadiene rubber Polymers 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 2
- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 238000004438 BET method Methods 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- 239000004640 Melamine resin Substances 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229920001807 Urea-formaldehyde Polymers 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 125000005370 alkoxysilyl group Chemical group 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000012986 chain transfer agent Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011258 core-shell material Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 229920006037 cross link polymer Polymers 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000806 elastomer Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- FJKIXWOMBXYWOQ-UHFFFAOYSA-N ethenoxyethane Chemical compound CCOC=C FJKIXWOMBXYWOQ-UHFFFAOYSA-N 0.000 description 2
- MBGQQKKTDDNCSG-UHFFFAOYSA-N ethenyl-diethoxy-methylsilane Chemical compound CCO[Si](C)(C=C)OCC MBGQQKKTDDNCSG-UHFFFAOYSA-N 0.000 description 2
- ZLNAFSPCNATQPQ-UHFFFAOYSA-N ethenyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)C=C ZLNAFSPCNATQPQ-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000011133 lead Substances 0.000 description 2
- 238000010297 mechanical methods and process Methods 0.000 description 2
- ZQMHJBXHRFJKOT-UHFFFAOYSA-N methyl 2-[(1-methoxy-2-methyl-1-oxopropan-2-yl)diazenyl]-2-methylpropanoate Chemical compound COC(=O)C(C)(C)N=NC(C)(C)C(=O)OC ZQMHJBXHRFJKOT-UHFFFAOYSA-N 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920005672 polyolefin resin Polymers 0.000 description 2
- 229920000346 polystyrene-polyisoprene block-polystyrene Polymers 0.000 description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000010526 radical polymerization reaction Methods 0.000 description 2
- 239000005060 rubber Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000001509 sodium citrate Substances 0.000 description 2
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 2
- 229920000468 styrene butadiene styrene block copolymer Polymers 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229920006337 unsaturated polyester resin Polymers 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 1
- OVGRCEFMXPHEBL-UHFFFAOYSA-N 1-ethenoxypropane Chemical compound CCCOC=C OVGRCEFMXPHEBL-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- HGOUNPXIJSDIKV-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)butyl 2-methylprop-2-enoate Chemical compound CCC(CO)(CO)COC(=O)C(C)=C HGOUNPXIJSDIKV-UHFFFAOYSA-N 0.000 description 1
- FXNDIJDIPNCZQJ-UHFFFAOYSA-N 2,4,4-trimethylpent-1-ene Chemical group CC(=C)CC(C)(C)C FXNDIJDIPNCZQJ-UHFFFAOYSA-N 0.000 description 1
- SBYMUDUGTIKLCR-UHFFFAOYSA-N 2-chloroethenylbenzene Chemical compound ClC=CC1=CC=CC=C1 SBYMUDUGTIKLCR-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- NMZSJIQGMAGSSO-UHFFFAOYSA-N 3-[[1-amino-2-[[1-amino-1-(2-carboxyethylimino)-2-methylpropan-2-yl]diazenyl]-2-methylpropylidene]amino]propanoic acid Chemical compound OC(=O)CCNC(=N)C(C)(C)N=NC(C)(C)C(=N)NCCC(O)=O NMZSJIQGMAGSSO-UHFFFAOYSA-N 0.000 description 1
- DOYKFSOCSXVQAN-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CCO[Si](C)(OCC)CCCOC(=O)C(C)=C DOYKFSOCSXVQAN-UHFFFAOYSA-N 0.000 description 1
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 description 1
- ATVJXMYDOSMEPO-UHFFFAOYSA-N 3-prop-2-enoxyprop-1-ene Chemical compound C=CCOCC=C ATVJXMYDOSMEPO-UHFFFAOYSA-N 0.000 description 1
- URDOJQUSEUXVRP-UHFFFAOYSA-N 3-triethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCOC(=O)C(C)=C URDOJQUSEUXVRP-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- YNWJPOVPFGCGLE-UHFFFAOYSA-N 4,4-diethoxybut-1-enylsilane Chemical compound C(C)OC(CC=C[SiH3])OCC YNWJPOVPFGCGLE-UHFFFAOYSA-N 0.000 description 1
- MZZPECHJKDVTOI-UHFFFAOYSA-N 4,4-dimethoxybut-1-enylsilane Chemical compound COC(CC=C[SiH3])OC MZZPECHJKDVTOI-UHFFFAOYSA-N 0.000 description 1
- DBCAQXHNJOFNGC-UHFFFAOYSA-N 4-bromo-1,1,1-trifluorobutane Chemical compound FC(F)(F)CCCBr DBCAQXHNJOFNGC-UHFFFAOYSA-N 0.000 description 1
- LIFHMKCDDVTICL-UHFFFAOYSA-N 6-(chloromethyl)phenanthridine Chemical compound C1=CC=C2C(CCl)=NC3=CC=CC=C3C2=C1 LIFHMKCDDVTICL-UHFFFAOYSA-N 0.000 description 1
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- XMSXQFUHVRWGNA-UHFFFAOYSA-N Decamethylcyclopentasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 XMSXQFUHVRWGNA-UHFFFAOYSA-N 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 239000004606 Fillers/Extenders Substances 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- 238000012695 Interfacial polymerization Methods 0.000 description 1
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 229920002319 Poly(methyl acrylate) Polymers 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920002367 Polyisobutene Polymers 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 1
- 239000004280 Sodium formate Substances 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- 239000007877 V-601 Substances 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- APZPSKFMSWZPKL-UHFFFAOYSA-N [3-hydroxy-2,2-bis(hydroxymethyl)propyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(CO)(CO)CO APZPSKFMSWZPKL-UHFFFAOYSA-N 0.000 description 1
- HFMKAYMKJGJQJT-UHFFFAOYSA-N [Ag].[Ni].[B] Chemical compound [Ag].[Ni].[B] HFMKAYMKJGJQJT-UHFFFAOYSA-N 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- PPHLMFYXUAYIJR-UHFFFAOYSA-N [B].[Ni].[Au] Chemical compound [B].[Ni].[Au] PPHLMFYXUAYIJR-UHFFFAOYSA-N 0.000 description 1
- OLXNZDBHNLWCNK-UHFFFAOYSA-N [Pb].[Sn].[Ag] Chemical compound [Pb].[Sn].[Ag] OLXNZDBHNLWCNK-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229920001893 acrylonitrile styrene Polymers 0.000 description 1
- 238000012644 addition polymerization Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- UJMDYLWCYJJYMO-UHFFFAOYSA-N benzene-1,2,3-tricarboxylic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1C(O)=O UJMDYLWCYJJYMO-UHFFFAOYSA-N 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- ZXYULJCZWBKBCX-UHFFFAOYSA-N but-1-enyl(diethoxy)silane Chemical compound C(C)C=C[SiH](OCC)OCC ZXYULJCZWBKBCX-UHFFFAOYSA-N 0.000 description 1
- LKZYQDVVGTXQTR-UHFFFAOYSA-N but-1-enyl(dimethoxy)silane Chemical compound CCC=C[SiH](OC)OC LKZYQDVVGTXQTR-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- QHIWVLPBUQWDMQ-UHFFFAOYSA-N butyl prop-2-enoate;methyl 2-methylprop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(=O)C(C)=C.CCCCOC(=O)C=C QHIWVLPBUQWDMQ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000007771 core particle Substances 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- MEWFSXFFGFDHGV-UHFFFAOYSA-N cyclohexyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C1CCCCC1 MEWFSXFFGFDHGV-UHFFFAOYSA-N 0.000 description 1
- KQAHMVLQCSALSX-UHFFFAOYSA-N decyl(trimethoxy)silane Chemical compound CCCCCCCCCC[Si](OC)(OC)OC KQAHMVLQCSALSX-UHFFFAOYSA-N 0.000 description 1
- 125000004386 diacrylate group Chemical group 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 1
- VHPUZTHRFWIGAW-UHFFFAOYSA-N dimethoxy-di(propan-2-yl)silane Chemical compound CO[Si](OC)(C(C)C)C(C)C VHPUZTHRFWIGAW-UHFFFAOYSA-N 0.000 description 1
- CVQVSVBUMVSJES-UHFFFAOYSA-N dimethoxy-methyl-phenylsilane Chemical compound CO[Si](C)(OC)C1=CC=CC=C1 CVQVSVBUMVSJES-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- AFOSIXZFDONLBT-UHFFFAOYSA-N divinyl sulfone Chemical compound C=CS(=O)(=O)C=C AFOSIXZFDONLBT-UHFFFAOYSA-N 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 230000001804 emulsifying effect Effects 0.000 description 1
- 238000010556 emulsion polymerization method Methods 0.000 description 1
- MEGHWIAOTJPCHQ-UHFFFAOYSA-N ethenyl butanoate Chemical compound CCCC(=O)OC=C MEGHWIAOTJPCHQ-UHFFFAOYSA-N 0.000 description 1
- GLVVKKSPKXTQRB-UHFFFAOYSA-N ethenyl dodecanoate Chemical compound CCCCCCCCCCCC(=O)OC=C GLVVKKSPKXTQRB-UHFFFAOYSA-N 0.000 description 1
- AFSIMBWBBOJPJG-UHFFFAOYSA-N ethenyl octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC=C AFSIMBWBBOJPJG-UHFFFAOYSA-N 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- BITPLIXHRASDQB-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane Chemical compound C=C[Si](C)(C)O[Si](C)(C)C=C BITPLIXHRASDQB-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- STVZJERGLQHEKB-UHFFFAOYSA-N ethylene glycol dimethacrylate Substances CC(=C)C(=O)OCCOC(=O)C(C)=C STVZJERGLQHEKB-UHFFFAOYSA-N 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 229920006226 ethylene-acrylic acid Polymers 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 1
- MSYLJRIXVZCQHW-UHFFFAOYSA-N formaldehyde;6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound O=C.NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 MSYLJRIXVZCQHW-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 239000012760 heat stabilizer Substances 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- CZWLNMOIEMTDJY-UHFFFAOYSA-N hexyl(trimethoxy)silane Chemical compound CCCCCC[Si](OC)(OC)OC CZWLNMOIEMTDJY-UHFFFAOYSA-N 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000012690 ionic polymerization Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 239000004611 light stabiliser Substances 0.000 description 1
- 238000010550 living polymerization reaction Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 238000010303 mechanochemical reaction Methods 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- XJRBAMWJDBPFIM-UHFFFAOYSA-N methyl vinyl ether Chemical compound COC=C XJRBAMWJDBPFIM-UHFFFAOYSA-N 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- MSRJTTSHWYDFIU-UHFFFAOYSA-N octyltriethoxysilane Chemical compound CCCCCCCC[Si](OCC)(OCC)OCC MSRJTTSHWYDFIU-UHFFFAOYSA-N 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- HVAMZGADVCBITI-UHFFFAOYSA-M pent-4-enoate Chemical compound [O-]C(=O)CCC=C HVAMZGADVCBITI-UHFFFAOYSA-M 0.000 description 1
- 125000006340 pentafluoro ethyl group Chemical group FC(F)(F)C(F)(F)* 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920000196 poly(lauryl methacrylate) Polymers 0.000 description 1
- 229920001481 poly(stearyl methacrylate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 238000012643 polycondensation polymerization Methods 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000005518 polymer electrolyte Substances 0.000 description 1
- 239000002685 polymerization catalyst Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- HKSGQTYSSZOJOA-UHFFFAOYSA-N potassium argentocyanide Chemical compound [K+].[Ag+].N#[C-].N#[C-] HKSGQTYSSZOJOA-UHFFFAOYSA-N 0.000 description 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 1
- XTFKWYDMKGAZKK-UHFFFAOYSA-N potassium;gold(1+);dicyanide Chemical compound [K+].[Au+].N#[C-].N#[C-] XTFKWYDMKGAZKK-UHFFFAOYSA-N 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- SCUZVMOVTVSBLE-UHFFFAOYSA-N prop-2-enenitrile;styrene Chemical compound C=CC#N.C=CC1=CC=CC=C1 SCUZVMOVTVSBLE-UHFFFAOYSA-N 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000007870 radical polymerization initiator Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000001632 sodium acetate Substances 0.000 description 1
- 235000017281 sodium acetate Nutrition 0.000 description 1
- HLBBKKJFGFRGMU-UHFFFAOYSA-M sodium formate Chemical compound [Na+].[O-]C=O HLBBKKJFGFRGMU-UHFFFAOYSA-M 0.000 description 1
- 235000019254 sodium formate Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000010558 suspension polymerization method Methods 0.000 description 1
- 238000010557 suspension polymerization reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910000597 tin-copper alloy Inorganic materials 0.000 description 1
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- JCSVHJQZTMYYFL-UHFFFAOYSA-N triethyl(methyl)silane Chemical compound CC[Si](C)(CC)CC JCSVHJQZTMYYFL-UHFFFAOYSA-N 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- XYJRNCYWTVGEEG-UHFFFAOYSA-N trimethoxy(2-methylpropyl)silane Chemical compound CO[Si](OC)(OC)CC(C)C XYJRNCYWTVGEEG-UHFFFAOYSA-N 0.000 description 1
- JRSJRHKJPOJTMS-UHFFFAOYSA-N trimethoxy(2-phenylethenyl)silane Chemical compound CO[Si](OC)(OC)C=CC1=CC=CC=C1 JRSJRHKJPOJTMS-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- LGROXJWYRXANBB-UHFFFAOYSA-N trimethoxy(propan-2-yl)silane Chemical compound CO[Si](OC)(OC)C(C)C LGROXJWYRXANBB-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229920006163 vinyl copolymer Polymers 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 239000004711 α-olefin Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
- H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
Abstract
The invention provides conductive particles which can effectively reduce the connection resistance between electrodes and can effectively inhibit the conductive particles from aggregating. The conductive particles (1, 11, 21) according to the present invention are provided with: the base material particle comprises a base material particle (2) and conductive sections (3, 12, 22) arranged on the surface of the base material particle, wherein the base material particle contains a conductive metal inside the base material particle.
Description
Technical Field
The present invention relates to conductive particles in which a conductive portion is disposed on the surface of a base material particle. The present invention also relates to a conductive material and a connection structure using the conductive particles.
Background
Anisotropic conductive materials such as anisotropic conductive paste and anisotropic conductive film are widely known. In the anisotropic conductive material, conductive particles are dispersed in a binder resin. In addition, as the conductive particles, there may be used conductive particles including base material particles and a conductive portion disposed on the surface of the base material particles.
The anisotropic conductive material is used to obtain various connection structures. Examples of the connection structure using the anisotropic conductive material include a connection between a flexible circuit board and a glass substrate (fog (film on glass)), a connection between a semiconductor chip and a flexible circuit board (cof (chip on film)), a connection between a semiconductor chip and a glass substrate (cog (chip on glass)), and a connection between a flexible circuit board and a glass epoxy substrate (fob (film on board)).
As an example of the above conductive particles, patent document 1 described below discloses a conductive particle including: a nickel layer, and a gold layer formed on the nickel layer. The average film thickness of the gold layer is
The following. In the conductive particle, the gold layer is an outermost layer. Meanwhile, in the conductive particles, the elemental composition ratio (Ni/Au) of nickel and gold on the surface of the conductive particles, which is obtained by X-ray photoelectron spectroscopy, is 0.4 or less.
Documents of the prior art
Patent document
Disclosure of Invention
Problems to be solved by the invention
In recent years, conductive materials containing conductive particles have also been reduced in particle size due to finer pitches of wiring, connectors, and the like in printed wiring boards and the like.
When connecting electrodes to each other using conductive particles having a small particle diameter to prepare a connection structure, the thickness of a conductive portion in the conductive particles may be increased in order to sufficiently reduce the connection resistance between the electrodes in the vertical direction. However, when the thickness of the conductive portion is increased, the conductive particles may aggregate when the conductive portion is formed by plating. When the conductive particles are aggregated, the electrodes adjacent in the lateral direction tend to be easily connected to each other, and it is difficult to improve the insulation reliability between the electrodes adjacent in the lateral direction.
Meanwhile, if the thickness of the conductive portion is reduced in order to suppress aggregation between the conductive particles, when the conductive portion is formed by plating, aggregation between the conductive particles can be suppressed, but it is difficult to sufficiently reduce the connection resistance between the electrodes in the up-down direction. In the conventional conductive particles, it is difficult to reduce the connection resistance between electrodes and to suppress the aggregation of the conductive particles.
The purpose of the present invention is to provide conductive particles that can effectively reduce the connection resistance between electrodes and can also effectively inhibit the occurrence of aggregation between conductive particles. It is another object of the present invention to provide a conductive material and a connection structure using the conductive particles.
Means for solving the problems
According to a broad aspect of the present invention, there is provided a conductive particle comprising: the substrate particles contain a conductive metal inside the substrate particles.
According to a specific aspect of the conductive particle according to the present invention, the porosity of the base material particle is 10% or more.
According to a specific aspect of the conductive particle of the present invention, the conductive metal contains nickel, gold, palladium, silver, or copper.
According to a specific aspect of the conductive particle according to the present invention, the conductive portion contains nickel, gold, palladium, silver, or copper.
According to a specific aspect of the conductive particles of the present invention, the 10% K value of the conductive particles is 100N/mm2Above 25000N/mm2The following.
According to a specific aspect of the conductive particles of the present invention, the conductive particles have a 30% K value of 100N/mm2Above and 15000N/mm2The following.
According to a specific aspect of the conductive particle according to the present invention, a ratio of a 10% K value of the conductive particle to a 30% K value of the conductive particle is 1.5 or more and 5 or less.
According to a specific aspect of the conductive particles according to the present invention, the conductive particles have a particle diameter of 0.1 μm or more and 1000 μm or less.
According to a specific aspect of the conductive particle according to the present invention, the content of the conductive metal contained in the base material particle is 0.1 vol% or more and 30 vol% or less in 100 vol% of the conductive particle.
According to a specific aspect of the conductive particle according to the present invention, the conductive particle has a protrusion on an outer surface of the conductive portion.
According to a specific aspect of the conductive particle according to the present invention, the conductive particle has an insulating material provided on an outer surface of the conductive portion.
According to a broad aspect of the present invention, there is provided a conductive material containing the above conductive particles and a binder resin.
In a specific aspect of the conductive material according to the present invention, when a region at a distance of 1/2 from an outer surface of the base particle toward a center of the base particle is defined as a region R1, a ratio of the number of conductive particles in which the conductive metal is present in the region R1 of the base particle is 50% or more based on 100% of the total number of the conductive particles.
In a specific aspect of the conductive material according to the present invention, when a region at a distance of 1/2 from the center of the base material particle toward the outer surface of the base material particle is defined as a region R2, the conductive material contains a plurality of the conductive particles, and the proportion of the number of the conductive particles in which the conductive metal is present in the region R2 of the base material particle is 5% or more based on 100% of the total number of the conductive particles.
According to a broad aspect of the present invention, there is provided a connection structure comprising: a first member to be connected having a first electrode on a surface thereof, a second member to be connected having a second electrode on a surface thereof, and a connecting portion for connecting the first member to be connected and the second member to be connected, wherein a material of the connecting portion is the conductive particle according to any one of claims 1 to 11 or a conductive material containing the conductive particle and a binder resin, and the first electrode and the second electrode are electrically connected by the conductive particle.
ADVANTAGEOUS EFFECTS OF INVENTION
The present invention relates to conductive particles, which are provided with: the substrate includes a substrate particle and a conductive portion disposed on a surface of the substrate particle. In the conductive particle according to the present invention, the base material particle contains a conductive metal inside the base material particle. In the conductive particles according to the present invention, since they have the above-described structure, the connection resistance between electrodes can be effectively reduced, and the occurrence of aggregation between conductive particles can be effectively suppressed.
Drawings
Fig. 1 is a cross-sectional view showing conductive particles according to a first embodiment of the present invention.
Fig. 2 is a cross-sectional view showing conductive particles according to a second embodiment of the present invention.
Fig. 3 is a cross-sectional view showing conductive particles according to a third embodiment of the present invention.
Fig. 4 is an interface diagram illustrating respective regions for confirming the presence or absence of the conductive metal in the base material particles.
Fig. 5 is a front cross-sectional view schematically showing a connection structure using conductive particles according to the first embodiment of the present invention.
Detailed Description
The present invention will be described in detail below.
(conductive particles)
The conductive particles according to the present invention include base material particles and a conductive portion disposed on the surface of the base material particles. In the conductive particle according to the present invention, the base material particle contains a conductive metal inside the base material particle.
In the conductive particles according to the present invention, since they have the above-described structure, the connection resistance between electrodes can be effectively reduced, and the occurrence of aggregation between conductive particles can be effectively suppressed.
When a connection structure is prepared by connecting electrodes using conductive particles having a small particle diameter, the thickness of a conductive portion in the conductive particles may be increased in order to sufficiently reduce the connection resistance between the electrodes in the vertical direction. However, when the thickness of the conductive portion is increased, an aggregation phenomenon may occur between conductive particles when the conductive portion is formed by plating. When the conductive particles are aggregated, the adjacent electrodes tend to be connected to each other in the lateral direction, and it is difficult to improve the insulation reliability between the adjacent electrodes in the lateral direction.
Further, if the thickness of the conductive portion is made thin in order to suppress aggregation between the conductive particles, aggregation between the conductive particles can be suppressed when the conductive portion is formed by plating, but it is difficult to sufficiently reduce the connection resistance between electrodes in the vertical direction. In the conventional conductive particles, it is difficult to reduce the connection resistance between electrodes and to suppress the aggregation of the conductive particles.
The present inventors have found that the use of specific conductive particles can reduce the connection resistance between electrodes and suppress the occurrence of aggregation between conductive particles. In the present invention, by compressing the conductive particles when connecting the electrodes in the vertical direction, not only the conductive path can be formed on the surface (conductive portion) of the conductive particles, but also the conductive path can be formed inside (conductive metal) the conductive particles. In addition, even if the conductive metal inside the conductive particles does not form a complete conductive path, it can at least contribute to a reduction in connection resistance. As a result, even when the thickness of the conductive portion is small, the connection resistance between the electrodes in the vertical direction can be sufficiently reduced. Further, since the thickness of the conductive portion is small, aggregation of conductive particles can be suppressed, and the insulation reliability between laterally adjacent electrodes which are not desired to be connected can be effectively improved. In the present invention, since the above-described structure is provided, the connection resistance between the electrodes can be effectively reduced, and the occurrence of aggregation between the conductive particles can be effectively suppressed. In the present invention, a conductive path (conductive portion) is formed not only on the surface of the base material particle but also inside the base material particle, and the conductive path (conductive portion) can penetrate deeply into the base material particle. As a result, the adhesion of the conductive portion to the conductive particles can be effectively improved, and the conductive portion of the conductive particles can be effectively prevented from peeling off.
In the present invention, in order to obtain the above-described effects, the use of specific conductive particles plays a large role.
The conductive particles preferably have a 10% K value (modulus of elasticity at 10% compression) of 100N/mm2Above, more preferably 1000N/mm2Above, and preferably 25000N/mm2Hereinafter, more preferably 20000N/mm2The following. When the 10% K value of the conductive particles is not less than the lower limit and not more than the upper limit, the connection resistance between the electrodes can be further effectively reduced, cracking of the conductive particles can be further effectively suppressed, and the connection reliability between the electrodes can be further effectively improved.
The conductive particles preferably have a 30% K value (compression modulus of elasticity at 30%) of 100N/mm2Above, more preferably 1000N/mm2Above, and preferably 15000N/mm2The concentration is preferably 10000N/mm or less2The following. When the 30% K value of the conductive particles is not less than the lower limit and not more than the upper limit, the connection resistance between the electrodes can be further effectively reduced, cracking of the conductive particles can be further effectively suppressed, and the connection reliability between the electrodes can be further effectively improved.
The ratio of the 10% K value of the conductive particles to the 30% K value of the conductive particles (10% K value of the conductive particles/30% K value of the conductive particles) is preferably 1.5 or more, more preferably 1.55 or more, and preferably 5 or less, more preferably 4.5 or less. When the ratio (10% K value of conductive particles/30% K value of conductive particles) is not less than the lower limit and not more than the upper limit, the connection resistance between electrodes can be further effectively reduced, cracking of conductive particles can be further effectively suppressed, and the connection reliability between electrodes can be further effectively improved.
The 10% K value and the 30% K value of the conductive particles can be measured as follows.
A conductive particle was compressed using a micro compression tester at 25 ℃ at a compression speed of 0.3 mN/sec and a maximum test load of 20mN with a smooth indenter end face of a cylinder (diameter 100 μm, manufactured by diamond). The load value (N) and the compression displacement (mm) at this time were measured. From the obtained measurement values, the compression modulus (10% K value and 30% K value) can be obtained by the following equations. As the micro compression tester, "Fisherscope H-100" manufactured by Fisher corporation, etc. can be used. The 10% K value and the 30% K value of the conductive particles are preferably calculated by arithmetic mean processing of 10% K values and 30% K values of arbitrarily selected 50 conductive particles.
10% K value and 30% K value (N/mm)2)＝(3/21/2)·F·S-3/2·R-1/2
F: load value (N) at 10% or 30% compression deformation of conductive particles
S: compression displacement (mm) at 10% or 30% compressive deformation of conductive particles
R: radius of conductive particle (mm)
The compressive modulus of elasticity generally and quantitatively represents the hardness of the conductive particles. By using the compressive modulus of elasticity, the hardness of the conductive particles can be quantitatively and uniformly expressed. Meanwhile, the above ratio (10% K value of conductive particles/30% K value of conductive particles) can quantitatively and uniformly represent the physical properties of the conductive particles at the initial compression.
The particle diameter of the conductive particles is preferably 0.1 μm or more, more preferably 1 μm or more, and preferably 1000 μm or less, more preferably 10 μm or less. When the particle diameter of the conductive particles is not less than the lower limit and not more than the upper limit, when the conductive particles are used to connect electrodes, the contact area between the conductive particles and the electrodes can be sufficiently increased, and the conductive particles are less likely to form aggregates when forming the conductive portion. At the same time, the gap between the electrodes connected via the conductive particles does not become excessively large, and the conductive portion is less likely to peel off from the surface of the base material particle.
The particle diameter of the conductive particles is preferably an average particle diameter, and is preferably a number average particle diameter. The particle diameter of the conductive particles can be determined, for example, by observing arbitrary 50 conductive particles under an electron microscope or an optical microscope and calculating the average value of the particle diameters of the respective conductive particles, or by using a particle size distribution measuring apparatus. When observed with an electron microscope or an optical microscope, the particle diameter of 1 conductive particle on average is determined as a circle-equivalent diameter particle diameter. When observed with an electron microscope or an optical microscope, the average particle diameter of the circle equivalent diameter of arbitrary 50 conductive particles is almost equal to the average particle diameter of the sphere equivalent diameter. When the particle size distribution measuring apparatus was used, the particle size of 1 conductive particle on average was determined as a spherical equivalent diameter. The average particle diameter of the conductive particles is preferably calculated by using a particle size distribution measuring apparatus.
The coefficient of variation (CV value) of the particle diameter of the conductive particles is preferably 10% or less, and more preferably 5% or less. When the coefficient of variation of the particle diameter of the conductive particles is not more than the upper limit, the conduction reliability and insulation reliability between electrodes can be further effectively improved.
The coefficient of variation (CV value) can be measured as follows.
CV value (%) - (ρ/Dn) × 100
ρ: standard deviation of particle diameter of conductive particle
Dn: average value of particle diameter of conductive particles
The shape of the conductive particles is not particularly limited. The conductive particles may be spherical, may be other than spherical, or may be flat.
The present invention will be specifically described below with reference to the accompanying drawings.
Fig. 1 is a cross-sectional view showing conductive particles according to a first embodiment of the present invention.
The conductive particle 1 shown in fig. 1 includes a base particle 2 and a conductive portion 3. The conductive portion 3 is disposed on the surface of the base particle 2. In the first embodiment, the conductive portion 3 is in contact with the surface of the base particle 2. The conductive particles 1 are coated particles in which the conductive portions 3 coat the surfaces of the base particles 2.
In the conductive particles 1, the conductive portion 3 is a single-layer conductive layer. In the conductive particles 1, the base particles 2 contain a conductive metal inside the base particles 2. In the conductive particles, the conductive portion may cover the entire surface of the base material particles, or the conductive portion may cover a part of the surface of the base material particles. In the conductive particles, the conductive portion may be a single-layer conductive layer or a multilayer conductive layer including two or more layers.
The conductive particles 1 do not have a core material unlike the conductive particles 11 and 21 described later. The conductive particles 1 have no protrusions on the surface. The conductive particles 1 are spherical. The conductive portion 3 has no protrusion on the outer surface. As described above, the conductive particles according to the present invention may have no protrusions on the conductive surface, or may be spherical. The conductive particles 1 do not have an insulating material unlike the conductive particles 11 and 21 described later. However, the conductive particles 1 may have an insulating material disposed on the outer surface of the conductive portion 3.
Fig. 2 is a cross-sectional view showing conductive particles according to a second embodiment of the present invention.
The conductive particles 11 shown in fig. 2 include base particles 2, a conductive portion 12, a plurality of core materials 13, and a plurality of insulating materials 14. The conductive portion 12 is disposed on the surface of the base particle 2 so as to be in contact with the base particle 2.
In the conductive particles 11, the conductive portion 12 is a single-layer conductive layer. In the conductive particles 11, the base particles 2 contain a conductive metal inside the base particles 2. In the conductive particles, the conductive portion may cover the entire surface of the base material particles, or the conductive portion may cover a part of the surface of the base material particles. In the conductive particles, the conductive portion may be a single-layer conductive layer or a multilayer conductive layer including two or more layers.
The conductive particles 11 have a plurality of protrusions 11a on the conductive surface. The conductive portion 12 has a plurality of protrusions 12a on an outer surface. The plurality of core materials 13 are disposed on the surface of the base particle 2. The plurality of core materials 13 are embedded in the conductive portion 12. The core material 13 is disposed inside the protrusions 11a, 12 a. The conductive portion 12 covers the plurality of core materials 13. The outer surface of the conductive portion 12 is raised by the plurality of core materials 13 to form protrusions 11a and 12 a.
The conductive particles 11 have an insulating material 14 disposed on the outer surface of the conductive portion 12. At least a partial region of the outer surface of the conductive portion 12 is covered with an insulating material 14. The insulating material 14 is made of an insulating material and is insulating particles. As described above, the conductive particles according to the present invention may have an insulating material disposed on the outer surface of the conductive portion. However, the conductive particles according to the present invention do not necessarily have to have an insulating substance.
Fig. 3 is a cross-sectional view showing conductive particles according to a third embodiment of the present invention.
The conductive particles 21 shown in fig. 3 include the base particles 2, the conductive portions 22, the plurality of core materials 13, and the plurality of insulating materials 14. The conductive portion 22 has a first conductive portion 22A on the substrate particle 2 side and a second conductive portion 22B on the opposite side of the substrate particle 2 side as a whole.
The conductive particles 11 are different from the conductive particles 21 only in the conductive portion. That is, the conductive portion 12 having a single-layer structure is formed in the conductive particle 11, and the first conductive portion 22A and the second conductive portion 22B having a double-layer structure are formed in the conductive particle 21. First conductive portion 22A and second conductive portion 22B are formed as different conductive portions.
The first conductive portion 22A is disposed on the surface of the base particle 2. The first conductive part 22A is disposed between the base particle 2 and the second conductive part 22B. The first conductive part 22A is in contact with the base particle 2. Second conductive portion 22B is in contact with first conductive portion 22A. Therefore, the first conductive portion 22A is disposed on the surface of the base particle 2, and the second conductive portion 22B is disposed on the surface of the first conductive portion 22A. The conductive particles 21 have a plurality of protrusions 21a on the conductive surface thereof. The conductive portion 22 has a plurality of protrusions 22a on its outer surface. The first conductive portion 22A has a plurality of protrusions 22Aa on its outer surface. The second conductive part 22B has a plurality of protrusions 22Ba on its outer surface.
Other details of the conductive particles will be described below.
(substrate particles)
The material of the base material particles is not particularly limited. The material of the base material particles may be an organic material or an inorganic material. The base particles made of only the organic material include resin particles and the like. Examples of the base particles formed only of the inorganic material include inorganic particles other than metals. Examples of the base particles formed of both the organic material and the inorganic material include organic-inorganic hybrid particles. From the viewpoint of further optimizing the compression characteristics of the base particles, the base particles are preferably resin particles or organic-inorganic hybrid particles, and more preferably resin particles.
Examples of the organic material include polyolefin resins such as polyethylene, polypropylene, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyisobutylene, and polybutadiene; acrylic resins such as polymethyl methacrylate and polymethyl acrylate; polycarbonate, polyamide, phenol resin, melamine-formaldehyde resin, benzoguanamine-formaldehyde resin, urea resin, phenol resin, melamine resin, benzoguanamine resin, urea resin, epoxy resin, unsaturated polyester resin, saturated polyester resin, polyethylene terephthalate, polysulfone, polyphenylene oxide, polyacetal, polyimide, polyamideimide, polyether ether ketone, polyether sulfone, a divinylbenzene polymer, a divinylbenzene copolymer, and the like. Examples of the divinylbenzene copolymer include a divinylbenzene-styrene copolymer and a divinylbenzene- (meth) acrylate copolymer. Since the compression characteristics of the base material particles can be more easily controlled within a preferred range, the material of the base material particles is preferably a polymer obtained by polymerizing one or more polymerizable monomers having an ethylenically unsaturated group.
When the base particles are obtained by polymerizing a polymerizable monomer having an ethylenically unsaturated group, examples of the polymerizable monomer having an ethylenically unsaturated group include a non-crosslinkable monomer and a crosslinkable monomer.
The non-crosslinkable monomer includes, as the vinyl compound, a styrene monomer such as styrene, α -methylstyrene, chlorostyrene, etc.; vinyl ether compounds such as methyl vinyl ether, ethyl vinyl ether and propyl vinyl ether; vinyl acid ester compounds such as vinyl acetate, vinyl butyrate, vinyl laurate and vinyl stearate; halogen-containing monomers such as vinyl chloride and vinyl fluoride; examples of the (meth) acrylic acid compound include alkyl (meth) acrylate compounds such as methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, lauryl (meth) acrylate, cetyl (meth) acrylate, stearyl (meth) acrylate, cyclohexyl (meth) acrylate, and isobornyl (meth) acrylate; oxygen atom-containing (meth) acrylate compounds such as 2-hydroxyethyl (meth) acrylate, glycerol (meth) acrylate, polyoxyethylene (meth) acrylate, and glycidyl (meth) acrylate; nitrile-containing monomers such as (meth) acrylonitrile; halogen-containing (meth) acrylate compounds such as trifluoromethyl (meth) acrylate and pentafluoroethyl (meth) acrylate; examples of the α -olefin compounds include olefin compounds such as diisobutylene, isobutylene, linear olefins, ethylene, and propylene; examples of the conjugated diene compound include isoprene and butadiene.
The crosslinkable monomer includes, as the vinyl compound, vinyl monomers such as divinylbenzene, 1, 4-dialkoxybutane and divinylsulfone; examples of the (meth) acrylate compound include polyfunctional (meth) acrylate compounds such as tetramethylolmethane tetra (meth) acrylate, polytetramethyleneglycol diacrylate, tetramethylolmethane tri (meth) acrylate, tetramethylolmethane di (meth) acrylate, trimethylolpropane tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, dipentaerythritol penta (meth) acrylate, glycerol tri (meth) acrylate, glycerol di (meth) acrylate, polyethylene glycol di (meth) acrylate, polypropylene glycol di (meth) acrylate, polytetramethyleneglycol di (meth) acrylate, and 1, 4-butanediol di (meth) acrylate; examples of the allyl compound include triallyl (iso) cyanurate, triallyl benzenetricarboxylate, diallyl phthalate, diallyl acrylamide, and diallyl ether; examples of the silane compound include alkoxysilane compounds such as tetramethoxysilane, tetraethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, isopropyltrimethoxysilane, isobutyltrimethoxysilane, cyclohexyltrimethoxysilane, n-hexyltrimethoxysilane, n-octyltriethoxysilane, n-decyltrimethoxysilane, phenyltrimethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, diisopropyldimethoxysilane, trimethoxysilylstyrene, gamma- (meth) acryloyloxypropyltrimethoxysilane, 1, 3-divinyltetramethyldisiloxane, methylphenyldimethoxysilane, and diphenyldimethoxysilane; alkoxysilanes having a polymerizable double bond such as vinyltrimethoxysilane, vinyltriethoxysilane, dimethoxymethylvinylsilane, dimethoxyethylvinylsilane, diethoxymethylvinylsilane, diethoxyethylvinylsilane, ethylmethyldiethylsilane, methylvinyldimethoxysilane, ethylvinyldimethoxysilane, methylvinyldiethoxysilane, ethylvinyldiethoxysilane, p-vinyltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxysilane, and 3-acryloxypropyltrimethoxysilane; cyclic siloxanes such as decamethylcyclopentasiloxane; modified (reactive) silicone oils such as single-ended modified silicone oil, double-ended silicone oil, and side-chain silicone oil; carboxyl group-containing monomers such as (meth) acrylic acid, maleic acid, and maleic anhydride.
The base material particles can be obtained by polymerizing a polymerizable monomer having the ethylenically unsaturated group. The polymerization method is not particularly limited, and known methods such as radical polymerization, ionic polymerization, polycondensation (condensation polymerization ), addition polymerization, living polymerization, and living radical polymerization may be mentioned. Further, as another polymerization method, suspension polymerization in the presence of a radical polymerization initiator can be exemplified.
Examples of the inorganic material include silica, alumina, barium titanate, zirconia, carbon black, silicate glass, borosilicate glass, lead glass, soda-lime glass, and aluminosilicate glass.
The base material particles may be organic-inorganic hybrid particles. The base material particles may be core-shell particles. When the base particles are organic-inorganic hybrid particles, examples of the inorganic substance as a material of the base particles include silica, alumina, barium titanate, zirconia, carbon black, and the like. The inorganic substance is preferably a nonmetal. The base particles made of silica are not particularly limited, and include: and (b) a base material particle obtained by hydrolyzing a silicon compound having two or more hydrolyzable alkoxysilyl groups to form a crosslinked polymer particle and then, if necessary, firing the crosslinked polymer particle. Examples of the organic-inorganic hybrid particles include organic-inorganic hybrid particles formed of a crosslinked alkoxysilyl polymer and an acrylic resin.
The organic-inorganic hybrid particles are preferably core-shell type organic-inorganic hybrid particles having a core and a shell disposed on the surface of the core. The core is preferably an organic core. The shell is preferably an inorganic shell. The base particles are preferably organic-inorganic hybrid particles having an organic core and an inorganic shell disposed on the surface of the organic core.
Examples of the material of the organic core include the organic materials described above.
The inorganic shell may be made of the inorganic material listed as the base particle material. The material of the inorganic shell is preferably silica. The inorganic casing is preferably: and an inorganic shell formed by forming a metal alkoxide on the surface of the core into a shell by a sol-gel method and then firing the shell. The metal alkoxide is preferably an alkoxysilane. The inorganic shell is preferably formed of an alkoxysilane.
The BET specific surface area of the substrate particles is preferably 8m2A value of at least g, more preferably 12m2A,/g or more, and preferably 1200m2A ratio of the total amount of the components to the total amount of the components is 1000m or less2The ratio of the carbon atoms to the carbon atoms is less than g. When the BET specific surface area is not less than the lower limitAnd the upper limit or less, the conductive metal can be further easily contained in the inside of the base material particle. When the BET specific surface area is not less than the lower limit and not more than the upper limit, the connection resistance between the electrodes can be further effectively reduced, and the occurrence of aggregation between the conductive particles can be further effectively suppressed. Meanwhile, when the BET specific surface area is not less than the lower limit and not more than the upper limit, the insulation reliability between the electrodes can be further effectively improved. When the BET specific surface area is not less than the lower limit and not more than the upper limit, the adhesion of the conductive portion in the conductive particle can be further effectively improved, and the occurrence of peeling of the conductive portion in the conductive particle can be further effectively suppressed.
The BET specific surface area of the substrate particles can be measured from the adsorption isotherm of nitrogen by the BET method. Examples of the device for measuring the BET specific surface area of the substrate particles include "NOVA 4200 e" manufactured by Cantachrome Instruments.
The total pore volume of the base material particles is preferably 0.01cm3A value of at least g, more preferably 0.1cm3A/g or more, and preferably 3cm3A concentration of 1.5cm or less3The ratio of the carbon atoms to the carbon atoms is less than g. If the total pore volume is not less than the lower limit and not more than the upper limit, the conductive metal can be further easily contained in the base material particles. When the total pore volume is not less than the lower limit and not more than the upper limit, the connection resistance between the electrodes can be further effectively reduced, and the occurrence of aggregation between the conductive particles can be further effectively suppressed. Meanwhile, if the total pore volume is not less than the lower limit and not more than the upper limit, the insulation reliability between the electrodes can be further effectively improved. Further, when the total pore volume is not less than the lower limit and not more than the upper limit, the adhesion of the conductive portion in the conductive particle can be further effectively improved, and the occurrence of peeling of the conductive portion in the conductive particle can be further effectively suppressed.
The total pore volume of the substrate particles can be measured from the nitrogen adsorption isotherm by the BJH method. Examples of the device for measuring the total pore volume of the substrate particles include "NOVA 4200 e" manufactured by Cantachrome Instruments.
The average pore diameter of the base material particles is preferably 10nm or less, and more preferably 5nm or less. The lower limit of the average pore diameter of the base material particles is not particularly limited. The average pore diameter of the base material particles may be 1nm or more. When the average pore diameter of the base material particles is not less than the lower limit and not more than the upper limit, the conductive metal can be further easily contained in the base material particles. When the average pore diameter is not less than the lower limit and not more than the upper limit, the connection resistance between the electrodes can be further effectively reduced, and the occurrence of aggregation between the conductive particles can be further effectively suppressed. Further, when the average pore diameter is not less than the lower limit and not more than the upper limit, the insulation reliability between the electrodes can be further effectively improved. When the average pore diameter is not less than the lower limit and not more than the upper limit, the adhesion of the conductive portion in the conductive particle can be further effectively improved, and the occurrence of peeling of the conductive portion in the conductive particle can be further effectively suppressed.
The average pore diameter of the base material particles can be measured from the adsorption isotherm of nitrogen by the BJH method. Examples of the device for measuring the average pore diameter of the base material particles include "NOVA 4200 e" manufactured by Cantachrome Instruments.
The porosity of the base material particles is preferably 5% or more, more preferably 10% or more, and preferably 90% or less, more preferably 70% or less. When the porosity is not less than the lower limit and not more than the upper limit, the conductive metal can be further easily contained in the base material particles. When the porosity is not less than the lower limit and not more than the upper limit, the connection resistance between the electrodes can be further effectively reduced, and the occurrence of aggregation between the conductive particles can be further effectively suppressed. In addition, when the porosity is not less than the lower limit and not more than the upper limit, the insulation reliability between the electrodes can be further effectively improved. When the porosity is not less than the lower limit and not more than the upper limit, the adhesion of the conductive portion in the conductive particle can be further effectively improved, and the occurrence of peeling of the conductive portion in the conductive particle can be further effectively suppressed.
The porosity of the substrate particles can be calculated by measuring the cumulative amount of mercury penetration with respect to the pressure applied by the mercury intrusion method. Examples of the device for measuring the porosity of the substrate particles include "Poremaster 60" manufactured by Cantachrome Instruments.
For example, the substrate particles satisfying the preferable ranges of the BET specific surface area, the porosity, and the like can be obtained by a method for producing the substrate particles including the following steps. That is, a step of mixing a polymerizable monomer and an organic solvent that does not react with the polymerizable monomer to prepare a polymerizable monomer solution. And a step of adding the polymerizable monomer solution and the anionic dispersion stabilizer to a polar solvent and emulsifying the mixture to obtain an emulsion. And a step of adding the emulsion in a plurality of times to allow the seed particles to absorb the monomer, thereby obtaining a suspension containing the seed particles swollen with the monomer. And a step of polymerizing the polymerizable monomer to obtain base particles. Examples of the polymerizable monomer include monofunctional monomers and polyfunctional monomers. The organic solvent which does not react with the polymerizable monomer is not particularly limited as long as it is not miscible with a polar solvent such as water as a solvent of the polymerization system. Examples of the organic solvent include cyclohexane, toluene, xylene, ethyl acetate, butyl acetate, allyl acetate, propyl acetate, chloroform, methylcyclohexane, and methyl ethyl ketone. The amount of the organic solvent added is preferably 105 to 215 parts by weight, more preferably 110 to 210 parts by weight, based on 100 parts by weight of the polymerizable monomer component. When the amount of the organic solvent added is within the above preferred range, the BET specific surface area, the porosity, and the like can be controlled to be further preferred ranges, and dense pores can be more easily obtained inside the particles.
Since the substrate particles satisfying the preferable ranges of the BET specific surface area, the porosity, and the like have many pores inside the substrate particles, when the conductive portion is formed on the surface of the substrate particle, the conductive portion enters the fine pores inside the substrate particle, and the conductive metal can be easily contained inside the substrate particle. In the above-described conductive particles, it is preferable that the conductive particles are compressed when connecting electrodes in the vertical direction, and conductive metals in the base particles are brought into contact with each other to form a conductive path. In the above-described conductive particles, not only the conductive path is formed on the surface (conductive portion) of the conductive particle, but also the conductive path is formed inside (conductive metal) the conductive particle. As a result, even when the thickness of the conductive portion is small, the connection resistance between the electrodes in the vertical direction can be sufficiently reduced. Further, since the thickness of the conductive portion is small, aggregation of conductive particles can be suppressed, and the insulation reliability between laterally adjacent electrodes that cannot be connected can be effectively improved. In the above-described conductive particles, when the conductive portion is formed on the surface of the base material particle, the conductive portion penetrates into the fine voids inside the base material particle, and therefore, the adhesion of the conductive portion to the conductive particle can be effectively improved, and the conductive portion in the conductive particle can be effectively prevented from being peeled off.
The particle diameter of the base material particles is preferably 0.1 μm or more, more preferably 1 μm or more. The particle diameter of the base material particles is preferably 1000 μm or less, more preferably 500 μm or less, still more preferably 300 μm or less, yet more preferably 50 μm or less, and still more preferably 10 μm or less. When the particle diameter of the base material particles is not less than the lower limit, the contact area between the conductive particles and the electrode becomes large, the conduction reliability between the electrodes can be further improved, and the connection resistance between the electrodes connected via the conductive particles can be further reduced. Further, it is possible to form conductive particles that are less likely to aggregate when a conductive portion is formed on the surface of the base material particles by electroless plating. When the particle diameter of the base material particles is not more than the upper limit, the conductive particles are easily sufficiently compressed, the connection resistance between the electrodes can be further reduced, and the gap between the electrodes can be further reduced.
The particle diameter of the base material particles is particularly preferably 1 μm or more and 3 μm or less. When the particle diameter of the base material particles is in the range of 1 μm to 3 μm, aggregation is less likely to occur when the conductive portion is formed on the surface of the base material particles, and aggregated conductive particles are less likely to be formed.
The particle size of the base material particle represents a number average particle size. The particle size of the base material particles can be determined by observing arbitrary 50 base material particles under an electron microscope or an optical microscope and calculating the average value of the particle sizes of the respective base material particles, or by using a particle size distribution measuring apparatus. When observed with an electron microscope or an optical microscope, the particle diameter of 1 base material particle on average is determined as a circle-equivalent diameter particle diameter. When observed using an electron microscope or an optical microscope, the average particle diameter of the circle equivalent diameter of arbitrary 50 base material particles is almost equal to the average particle diameter of the sphere equivalent diameter. When a particle size distribution measuring apparatus is used, the average particle size of 1 base material particle is determined as a particle size of a spherical equivalent diameter. The average particle diameter of the base material particles is preferably calculated using a particle size distribution measuring apparatus. In the conductive particles, in order to measure the particle diameter of the base material particles, for example, the following procedure can be used.
Conductive particles were added to and dispersed in "Technobit 4000" manufactured by Kulzer corporation so that the content of the conductive particles was 30 wt%, to prepare an embedding resin for conductive particle inspection. The cross section of the conductive particles was cut out so as to pass through the vicinity of the center of the conductive particles dispersed in the embedding resin for inspection using an ion milling apparatus ("IM 4000" manufactured by hitachi high new technology corporation). Subsequently, the image magnification was set to 25000 times using a field emission scanning electron microscope (FE-SEM), and 50 conductive particles were randomly selected, and the substrate particles of each conductive particle were observed. The particle diameter of the base material particle in each conductive particle was measured, which was subjected to arithmetic average processing to obtain the particle diameter of the base material particle.
(conductive part and conductive Metal)
The conductive particles according to the present invention include base material particles and a conductive portion disposed on the surface of the base material particles. In the conductive particle according to the present invention, the base material particle contains a conductive metal inside the base material particle. The conductive portion preferably contains a metal. The metal constituting the conductive portion is not particularly limited. The conductive metal is not particularly limited. The metal constituting the conductive portion may be the same metal as the conductive metal or may be a different metal. Preferably, the metal having the largest content in the conductive portion and the metal having the largest content in the conductive metal are the same metal.
Examples of the metal constituting the conductive portion and the conductive metal include gold, silver, palladium, copper, platinum, zinc, iron, tin, lead, aluminum, cobalt, indium, nickel, chromium, titanium, antimony, bismuth, thallium, germanium, cadmium, silicon, tungsten, molybdenum, and alloys thereof. Further, examples of the metal constituting the conductive portion and the conductive metal include tin-doped indium oxide (ITO) and solder. The metal constituting the conductive portion and the conductive metal may be used alone or in combination of two or more.
From the viewpoint of further effectively reducing the connection resistance between the electrodes, the conductive portion preferably contains nickel, gold, palladium, silver, or copper, and more preferably contains nickel, gold, or palladium.
The nickel content in 100 wt% of the nickel-containing conductive portion is preferably 10 wt% or more, more preferably 50 wt% or more, still more preferably 60 wt% or more, still more preferably 70 wt% or more, and particularly preferably 90 wt% or more. The nickel content in 100 wt% of the nickel-containing conductive portion may be 97 wt% or more, may be 97.5 wt% or more, and may be 98 wt% or more.
Due to oxidation, hydroxyl groups are often present on the surface of the conductive portion. Generally, hydroxyl groups are present on the surface of a conductive portion formed of nickel due to oxidation. On the surface of such a conductive portion having hydroxyl groups (surface of conductive particles), an insulating substance may be disposed by chemical bonding.
The conductive portion may be formed of one layer. The conductive portion may be formed of a plurality of layers. That is, the conductive portion may have a laminated structure of two or more layers. When the conductive portion is formed of a plurality of layers, the metal constituting the outermost layer is preferably an alloy containing gold, nickel, palladium, copper, tin, and silver, and more preferably gold. If the metal constituting the outermost layer is the above-described preferable metal, the connection resistance between the electrodes is further reduced. Further, if the metal constituting the outermost layer is gold, the corrosion resistance is further improved.
The method for forming the conductive portion on the surface of the base material particle is not particularly limited. Examples of the method for forming the conductive portion include a method of electroless plating, a method of electroplating, a method of physical collision, a method of mechanochemical reaction, a method of physical vapor deposition or physical adsorption, and a method of applying a paste containing a metal powder or a metal powder and a binder to the surface of the base particles. The method of forming the conductive portion is preferably an electroless plating method, or a plating or physical impact method. Examples of the physical vapor deposition method include vacuum vapor deposition, ion plating, and ion sputtering. As a method of the physical collision, a sheet Composer (manufactured by degauss inc.) or the like can be used.
The method for containing the conductive metal in the base material particles is not particularly limited. Examples of the method of containing the conductive metal in the base particles include a method of performing electroless plating using the base particles (base particle bodies) as porous particles, and a method of performing electroplating using the base particles (base particle bodies) as porous particles. Since the base material particles (base material particle bodies) as the porous particles have many pores inside the base material particles, when the conductive portion is formed on the surface of the base material particles, the conductive portion forming material (plating solution or the like) can be impregnated into the fine pores inside the base material particles. The conductive metal can be easily contained in the base material particles by precipitating the conductive metal from the conductive portion forming material that has penetrated into the base material particles. The substrate particles as the porous particles include substrate particles satisfying preferable ranges of the BET specific surface area, the porosity, and the like.
The thickness of the conductive portion is preferably 0.005 μm or more, more preferably 0.01 μm or more, and preferably 10 μm or less, more preferably 1 μm or less, and further preferably 0.3 μm or less. When the conductive portion has a multilayer structure, the thickness of the conductive portion refers to the thickness of the entire conductive portion. When the thickness of the conductive portion is not less than the lower limit and not more than the upper limit, sufficient conductivity can be obtained, and the conductive particles can be sufficiently deformed when connecting the electrodes without making the conductive particles too hard.
When the conductive portion is formed of a plurality of layers, the thickness of the conductive portion in the outermost layer is preferably 0.001 μm or more, more preferably 0.01 μm or more, and preferably 0.5 μm or less, more preferably 0.1 μm or less. When the thickness of the outermost conductive part is not less than the lower limit and not more than the upper limit, the outermost conductive part can be uniformly coated, the corrosion resistance can be sufficiently improved, and the connection resistance between the electrodes can be sufficiently reduced. Further, if the metal constituting the outermost layer is gold, the thinner the thickness of the outermost layer is, the more the cost can be reduced.
For example, the thickness of the conductive portion can be measured by observing the cross section of the conductive particle using a Transmission Electron Microscope (TEM). The thickness of the conductive portion is preferably calculated as an average value of the thicknesses of five positions of any conductive portion, and more preferably calculated as an average value of the thicknesses of the entire conductive portions. The thickness of the conductive portion is preferably determined by calculating an average value of the thicknesses of the conductive portions of the respective conductive particles for any 10 conductive particles.
The content of the conductive metal is preferably 5 vol% or more, more preferably 10 vol% or more, and preferably 70 vol% or less, more preferably 50 vol% or less, in 100 vol% of the conductive particles. When the content of the conductive metal is not less than the lower limit and not more than the upper limit, the connection resistance between the electrodes can be further effectively reduced, and the occurrence of aggregation between the conductive particles can be further effectively suppressed. When the content of the conductive metal is not less than the lower limit and not more than the upper limit, the insulation reliability between the electrodes can be further effectively improved. When the content of the conductive metal is not less than the lower limit and not more than the upper limit, the adhesion of the conductive portion in the conductive particle can be further effectively improved, and the occurrence of peeling of the conductive portion in the conductive particle can be further effectively suppressed. From the viewpoint of further optimizing the compression characteristics of the conductive particles, the content of the conductive metal in 100 vol% of the conductive particles is preferably 5 vol% or more, more preferably 10 vol% or more, and preferably 50 vol% or less, more preferably 40 vol% or less. From the viewpoint of further effectively reducing the connection resistance between the electrodes, the content of the conductive metal in 100 vol% of the conductive particles is preferably 10 vol% or more, more preferably 20 vol% or more, and preferably 50 vol% or less, more preferably 40 vol% or less. The content of the conductive metal is particularly preferably 10 vol% or more and 40 vol% or less in 100 vol% of the conductive particles. When the content of the conductive metal is in the range of 10 vol% or more and 40 vol% or less, optimization of the compression characteristics of the conductive particles and reduction of the connection resistance between the electrodes can be achieved at a higher level. The content of the conductive metal is the total content of the metal constituting the conductive portion and the conductive metal contained in the base material particles. Whether or not the conductive metal is contained in the base material particles is preferably determined based on a first ratio and a second ratio, which will be described later.
The content of the above conductive metal can be calculated according to the following formula.
Content (volume%) of conductive metal D × M/Dmetal × 100
D: specific gravity of conductive particles
M: metallization ratio of conductive particles
Dmestal: specific gravity of conductive metal
The metallization ratio of the conductive particles can be calculated by ICP emission spectrometry or the like, and the specific gravity of the conductive particles can be measured by a true densitometer or the like. Further, the specific gravity of the conductive metal can be calculated using the value specific to the metal. The metallization ratio of the conductive particles is the content (g) of the conductive metal contained in the conductive particles 1g expressed by a ratio, that is, the content (g) of the conductive metal contained in the conductive particles 1 g/the conductive particles 1 g.
The content of the conductive metal contained in the base material particles is preferably 0.1 vol% or more, more preferably 1 vol% or more, and preferably 30 vol% or less, more preferably 20 vol% or less, of 100 vol% of the conductive particles. When the content of the conductive metal is not less than the lower limit and not more than the upper limit, the connection resistance between the electrodes can be further effectively reduced, and the occurrence of aggregation between the conductive particles can be further effectively suppressed. When the content of the conductive metal is not less than the lower limit and not more than the upper limit, the adhesion of the conductive portion in the conductive particle can be further effectively improved, and the occurrence of peeling of the conductive portion in the conductive particle can be further effectively suppressed.
From the viewpoint of further optimizing the compression characteristics of the conductive particles, the content of the conductive metal contained in the conductive portion is preferably 0.1% by volume or more, more preferably 1% by volume or more, and preferably 30% by volume or less, more preferably 20% by volume or less, of 100% by volume of the conductive particles. From the viewpoint of further effectively reducing the connection resistance between the electrodes, the content of the conductive metal contained in the conductive portion is preferably 0.1% by volume or more, more preferably 1% by volume or more, and preferably 30% by volume or less, more preferably 20% by volume or less, of 100% by volume of the conductive particles.
(core material)
The conductive particles preferably have protrusions on the outer surface of the conductive portion. The conductive particles preferably have protrusions on the conductive surface. The number of the projections is preferably plural. An oxide film is often formed on the surface of the electrode connected by the conductive particles. When the conductive particles having the protrusions on the surface of the conductive portion are used, the oxide film can be effectively removed by the protrusions by disposing and pressing the conductive particles between the electrodes. Therefore, the electrode and the conductive portion are more reliably brought into contact, and the connection resistance between the electrodes is further reduced. Further, when the conductive particles are provided with an insulating material or the conductive particles are dispersed in a binder resin and used as a conductive material, the insulating material or the binder resin between the conductive particles and the electrode can be further effectively eliminated by the protrusions of the conductive particles. Therefore, the connection resistance between the electrodes can be further reduced.
If the core material is formed of a metal and the core material is present in the conductive portion, the core material may be regarded as a part of the conductive portion.
Examples of the method for forming the protrusion include: a method of forming a conductive portion by electroless plating after attaching a core material to the surface of the base material particle, a method of forming a conductive portion by electroless plating after forming a conductive portion on the surface of the base material particle, and a method of attaching a core material and further forming a conductive portion by electroless plating. In addition, the core material may not be used in order to form the protrusions.
Other methods for forming the protrusions include: a method of adding a core material at an intermediate stage of forming a conductive portion on the surface of the base material particle, and the like. In order to form the protrusions, a method may be employed in which conductive portions are formed on the base material particles by electroless plating without using the core material, then a plating material is deposited in the form of protrusions on the surfaces of the conductive portions, and further the conductive portions are formed by electroless plating.
Examples of the method for attaching the core material to the surface of the base material particle include: a method of adding a core material to a dispersion of base material particles and causing the core material to accumulate and adhere to the surfaces of the base material particles by van der waals force, a method of adding a core material to a container containing base material particles and causing the core material to adhere to the surfaces of the base material particles by a mechanical action such as rotating the container, and the like. From the viewpoint of controlling the amount of the core material to be attached, a method of attaching the core material to the surface of the base material particle is preferably a method of accumulating and attaching the core material to the surface of the base material particle in the dispersion liquid.
Examples of the material constituting the core material include a conductive material and a non-conductive material. Examples of the conductive material include conductive nonmetal such as metal, metal oxide, and graphite, and conductive polymer. The conductive polymer may be polyacetylene or the like. Examples of the nonconductive substance include silica, alumina, and zirconia. From the viewpoint of further effectively eliminating the oxide film, the core material is preferably hard. The core material is preferably a metal from the viewpoint of further effectively reducing the connection resistance between the electrodes.
The metal is not particularly limited. Examples of the metal include: metals such as gold, silver, copper, platinum, zinc, iron, lead, tin, aluminum, zirconium, indium, nickel, chromium, titanium, antimony, bismuth, germanium, and cadmium, and alloys of two or more metals such as tin-lead alloy, tin-copper alloy, tin-silver alloy, tin-lead-silver alloy, and tungsten carbide. From the viewpoint of further effectively reducing the connection resistance between the electrodes, the metal is preferably nickel, copper, silver, or gold. The metal may be the same as or different from the metal constituting the conductive portion (conductive layer).
There is no particular limitation on the shape of the core material. The shape of the core material is preferably a block. Examples of the core material include a particulate mass, an aggregate mass in which a plurality of fine particles are aggregated, and an amorphous mass.
The particle diameter of the core material is preferably 0.001 μm or more, more preferably 0.05 μm or more, and preferably 0.9 μm or less, more preferably 0.2 μm or less. If the particle diameter of the core material is not less than the lower limit and not more than the upper limit, the connection resistance between the electrodes can be further effectively reduced.
The particle size of the core material is preferably an average particle size, and more preferably a number average particle size. The particle size of the core material can be determined, for example, by observing arbitrary 50 core materials under an electron microscope or an optical microscope and calculating the average value of the particle sizes of the respective core materials, or by using a particle size distribution measuring apparatus. When observed by an electron microscope or an optical microscope, the particle diameter of 1 core material on average is determined as a circle-equivalent diameter particle diameter. When observed using an electron microscope or an optical microscope, the average particle diameter of the circle equivalent diameter of any 50 core substances is almost equivalent to the average particle diameter of the sphere equivalent diameter. When the particle size distribution measuring apparatus is used, the particle size of 1 core material on average is determined as a particle size of a spherical equivalent diameter. The average particle diameter of the core material is preferably calculated using a particle size distribution measuring apparatus.
The number of protrusions of 1 conductive particle is preferably 3 or more, and more preferably 5 or more, on the average. There is no particular limit to the upper limit of the number of the above-mentioned protrusions. The upper limit of the number of the protrusions may be appropriately selected in consideration of the particle diameter of the conductive particles and the like. If the number of the protrusions is equal to or greater than the lower limit, the connection resistance between the electrodes can be further effectively reduced.
The number of the protrusions can be determined by observing arbitrary conductive particles under an electron microscope or an optical microscope. Preferably, the number of the protrusions is determined by observing arbitrary 50 conductive particles under an electron microscope or an optical microscope and calculating an average value of the number of the protrusions of each conductive particle.
The height of the protrusions is preferably 0.001 μm or more, more preferably 0.05 μm or more, and preferably 0.9 μm or less, more preferably 0.2 μm or less. If the height of the protrusion is not less than the lower limit and not more than the upper limit, the connection resistance between the electrodes can be further effectively reduced.
The height of the protrusions can be determined by observing the protrusions in any of the conductive particles under an electron microscope or an optical microscope. The height of the protrusions is preferably calculated by taking the average of the heights of all the protrusions of 1 conductive particle as the height of the protrusion of one conductive particle. Preferably, the height of the protrusion is determined by calculating an average value of the height of the protrusion of each conductive particle for any 50 conductive particles.
(insulating Material)
The conductive particles preferably include an insulating material disposed on an outer surface of the conductive portion. In this case, when the conductive particles are used for connection between electrodes, short-circuiting between adjacent electrodes can be more effectively prevented. Specifically, when a plurality of conductive particles are in contact with each other, the insulating material is present between the plurality of electrodes, and therefore, short-circuiting between adjacent electrodes can be prevented in the lateral direction rather than in the vertical direction. When the conductive particles are connected to the electrodes, the insulating material between the conductive portions of the conductive particles and the electrodes can be easily removed by pressurizing the conductive particles with two electrodes. Further, if the conductive particles have protrusions on the outer surface of the conductive portion, the insulating material between the conductive portion of the conductive particles and the electrode can be more easily removed.
The insulating material is preferably insulating particles from the viewpoint of further facilitating removal of the insulating material when the electrodes are in pressure contact with each other.
Examples of the material of the insulating material include the organic material, the inorganic material, and the inorganic material listed as the material of the base particles. The material of the insulating material is preferably the organic material.
Examples of the other material of the insulating material include polyolefin compounds, (meth) acrylate polymers, (meth) acrylate copolymers, block polymers, thermoplastic resins, crosslinked products of thermoplastic resins, thermosetting resins, and water-soluble resins. The insulating material may be used alone or in combination of two or more.
Examples of the polyolefin compound include polyethylene, ethylene-vinyl acetate copolymer, and ethylene-acrylic acid ester copolymer. Examples of the (meth) acrylate polymer include polymethyl (meth) acrylate, polydodecyl (meth) acrylate, and polystearyl (meth) acrylate. Examples of the block polymer include polystyrene, styrene-acrylate copolymers, SB-type styrene-butadiene block copolymers, SBs-type styrene-butadiene block copolymers, and hydrogenated products thereof. Examples of the thermoplastic resin include vinyl polymers and vinyl copolymers. Examples of the thermosetting resin include epoxy resin, phenol resin, and melamine resin. The crosslinked product of the thermoplastic resin may be introduced, for example, into polyethylene glycol methacrylate, alkoxylated trimethylolpropane methacrylate, alkoxylated pentaerythritol methacrylate, or the like. Examples of the water-soluble resin include polyvinyl alcohol, polyacrylic acid, polyacrylamide, polyvinylpyrrolidone, polyethylene oxide, and methyl cellulose. Further, a chain transfer agent may be used to adjust the degree of polymerization. Examples of the chain transfer agent include mercaptans and carbon tetrachloride.
Examples of the method of disposing the insulating material on the surface of the conductive portion include a chemical method, a physical method, a mechanical method, and the like. Examples of the chemical method include an interfacial polymerization method, a suspension polymerization method in the presence of particles, and an emulsion polymerization method. Examples of the physical method or mechanical method include spray drying, mixing, electrostatic adsorption, spraying, dipping, and vacuum deposition. In the case where the electrodes are electrically connected, the method of disposing the insulating material on the surface of the conductive portion is preferably a physical method from the viewpoint of further effectively improving the insulation reliability and the conduction reliability.
The outer surface of the conductive portion and the outer surface of the insulating material may be covered with a compound having a reactive functional group. The outer surface of the conductive portion and the outer surface of the insulating material may not be directly chemically bonded, or may be indirectly chemically bonded through a compound having a reactive functional group. After introducing a carboxyl group to the outer surface of the conductive portion, the carboxyl group may be chemically bonded to a functional group on the outer surface of the insulating material via a polymer electrolyte such as polyethyleneimine.
When the insulating material is insulating particles, the particle size of the insulating particles can be appropriately selected according to the particle size of the conductive particles, the use of the conductive particles, and the like. The particle diameter of the insulating particles is preferably 10nm or more, more preferably 100nm or more, further preferably 300nm or more, particularly preferably 500nm or more, and preferably 4000nm or less, more preferably 2000nm or less, further preferably 1500nm or less, and particularly preferably 1000nm or less. When the particle diameter of the insulating particles is not less than the lower limit, the conductive portions of the plurality of conductive particles are less likely to contact each other when the conductive particles are dispersed in the binder resin. If the particle diameter of the insulating particles is not more than the upper limit, it is not necessary to increase the pressure excessively to exclude the insulating particles between the electrode and the conductive particles and to heat the insulating particles at a high temperature when connecting the electrodes.
The particle diameter of the insulating particles is preferably an average particle diameter, and more preferably a number average particle diameter. The particle size of the insulating particles can be determined, for example, by observing arbitrary 50 insulating particles under an electron microscope or an optical microscope and calculating the average value of the particle sizes of the respective insulating particles, or by using a particle size distribution measuring apparatus. When observed with an electron microscope or an optical microscope, the average particle diameter of 1 insulating particle is determined as a circle-equivalent diameter. When observed with an electron microscope or an optical microscope, the average particle diameter of the circle-equivalent diameter of arbitrary 50 insulating particles is almost equal to the average particle diameter of the sphere-equivalent diameter. When the particle size distribution measuring apparatus is used, the average particle size of 1 insulating particle is determined as a particle size of a spherical equivalent diameter. The average particle diameter of the insulating particles is preferably calculated using a particle size distribution measuring apparatus. In the conductive particles, the particle diameter of the insulating particles can be measured, for example, as follows.
The conductive particles were added to and dispersed in "Technobit 4000" manufactured by Kulzer, so that the content of the conductive particles was 30 wt%, to prepare an intercalation resin for conductive particle inspection. The cross section of the conductive particles was cut out so as to pass through the vicinity of the center of the conductive particles dispersed in the embedding resin for inspection using an ion milling apparatus ("IM 4000" manufactured by hitachi high new technology corporation). Subsequently, using a field emission scanning electron microscope (FE-SEM), the image magnification was set to 5 ten thousand times, 50 conductive particles were randomly selected, and the insulating particles of each conductive particle were observed. The particle diameter of the insulating particles in each conductive particle was measured, and arithmetic average treatment was performed thereon to obtain the particle diameter of the insulating particles.
The ratio of the particle diameter of the conductive particles to the particle diameter of the insulating particles (particle diameter of the conductive particles/particle diameter of the insulating particles) is preferably 4 or more, more preferably 8 or more, and preferably 200 or less, more preferably 100 or less. When the ratio (particle diameter of conductive particles/particle diameter of insulating particles) is not less than the lower limit and not more than the upper limit, insulation reliability and conduction reliability can be further effectively improved when the electrodes are electrically connected.
(conductive Material)
The conductive material according to the present invention contains the above conductive particles and a binder resin. The conductive particles are preferably dispersed in a binder resin, and are preferably dispersed in a binder resin to be used as a conductive material. The conductive material is preferably an anisotropic conductive material. The above-mentioned conductive material is preferably used for electrical connection between electrodes. The conductive material is preferably a conductive material for a connection line. In the above conductive material, since the conductive particles are used, the connection resistance between electrodes can be further effectively reduced, and the occurrence of aggregation between the conductive particles can be further effectively suppressed. In the above conductive material, since the conductive particles are used, the insulation reliability between electrodes can be further effectively improved.
The conductive material preferably contains a plurality of the conductive particles. When a region at a distance of 1/2 from the outer surface of the base material particle toward the center of the base material particle is defined as a region R1, the ratio of the number of conductive particles in which the conductive metal is present in the region R1 of the base material particle (hereinafter, also referred to as a first ratio) is preferably 50% or more, and more preferably 60% or more, based on 100% of the total number of the conductive particles. There is no particular limitation on the upper limit of the first ratio. The first ratio may be 100% or less. When the first ratio is not less than the lower limit, the connection resistance between the electrodes can be further effectively reduced, and the occurrence of aggregation between the conductive particles can be further effectively suppressed. Further, when the first ratio is not less than the lower limit, the insulation reliability between the electrodes can be further effectively improved. When the first ratio is not less than the lower limit and not more than the upper limit, the adhesion of the conductive portion in the conductive particle can be further effectively improved, and the occurrence of peeling of the conductive portion in the conductive particle can be further effectively suppressed. When the first ratio exceeds 0%, it can be determined that the conductive metal is contained in the base material particles. The region R1 is a region outside the broken line L1 of the substrate particle 2 in fig. 4. The region R1 is an outer surface portion of the substrate particle. The region R1 is a region different from the central portion of the substrate particle.
When a region at a distance of 1/2 from the center of the base material particle toward the outer surface of the base material particle is defined as a region R2, the ratio of the number of conductive particles in which the conductive metal is present in the region R2 of the base material particle (hereinafter, also referred to as a second ratio) to the total number of conductive particles is preferably 5% or more, and more preferably 10% or more. There is no particular limitation on the upper limit of the above second ratio. The second ratio may be 100% or less. When the second ratio is not less than the lower limit, the connection resistance between the electrodes can be further effectively reduced, and the occurrence of aggregation between the conductive particles can be further effectively suppressed. When the second ratio is not less than the lower limit, the insulation reliability between the electrodes can be further effectively improved. Meanwhile, when the second ratio is not less than the lower limit and not more than the upper limit, the adhesion of the conductive portion in the conductive particle can be further effectively improved, and the occurrence of peeling of the conductive portion in the conductive particle can be further effectively suppressed. When the second ratio exceeds 0%, it can be determined that the conductive metal is contained in the base material particles. The region R2 is a region inside the broken line L1 of the substrate particle 2 in fig. 4. The region R2 is a central portion of the substrate particle. The region R2 is a region different from the outer surface portion of the substrate particle.
The first ratio and the second ratio may be calculated as follows.
The conductive particles are recovered from the conductive material by filtration or the like. The conductive particles were added to and dispersed in "Technobit 4000" manufactured by Kulzer, so that the content of the recovered conductive particles was 30 wt%, to prepare an embedding resin for conductive particle inspection. The cross section of the conductive particles was cut out so as to pass through the vicinity of the center of the conductive particles dispersed in the embedding resin for inspection using an ion milling apparatus ("IM 4000" manufactured by hitachi high new technology corporation). Subsequently, the presence or absence of the conductive metal in the cross section of the base material particle is measured by an energy dispersive X-ray analyzer (EDS) using a field emission transmission electron microscope ("JEM-2010 FEF", manufactured by japan electronics corporation), whereby the distribution result of the conductive metal in the particle diameter direction of the base material particle can be obtained. The first ratio and the second ratio can be calculated from the distribution result of the conductive metal in the arbitrarily selected 20 conductive particles.
The binder resin is not particularly limited. As the adhesive resin, a known insulating resin can be used. The adhesive resin preferably contains a thermoplastic component (thermoplastic compound) or a curable component, and more preferably contains a curable component. Examples of the curable component include a photocurable component and a thermosetting component. The photocurable component preferably contains a photocurable compound and a photopolymerization initiator. The thermosetting component preferably contains a thermosetting compound and a thermosetting agent.
Examples of the adhesive resin include vinyl resins, thermoplastic resins, curable resins, thermoplastic block copolymers, and elastomers. The adhesive resin may be used alone or in combination of two or more.
Examples of the vinyl resin include vinyl acetate resins, acrylic resins, and styrene resins. Examples of the thermoplastic resin include polyolefin resins, ethylene-vinyl acetate copolymers, and polyamide resins. Examples of the curable resin include epoxy resins, polyurethane resins, polyimide resins, and unsaturated polyester resins. The curable resin may be a room temperature curable resin, a thermosetting resin, a photocurable resin, or a moisture curable resin. The curable resin may be used together with a curing agent. Examples of the thermoplastic block copolymer include a styrene-butadiene-styrene block copolymer, a styrene-isoprene-styrene block copolymer, a hydrogenated product of a styrene-butadiene-styrene block copolymer, and a hydrogenated product of a styrene-isoprene-styrene block copolymer. Examples of the elastomer include styrene-butadiene copolymer rubber and acrylonitrile-styrene block copolymer rubber.
The conductive material may contain various additives such as a filler, an extender, a softener, a plasticizer, a polymerization catalyst, a curing catalyst, a colorant, an antioxidant, a heat stabilizer, a light stabilizer, an ultraviolet absorber, a lubricant, an antistatic agent, and a flame retardant in addition to the conductive particles and the binder resin.
As a method for dispersing the conductive particles in the adhesive resin, a conventionally known dispersion method can be used, and there is no particular limitation. As a method for dispersing the conductive particles in the adhesive resin, the following method can be mentioned. A method in which the conductive particles are added to the adhesive resin, and then kneaded and dispersed using a planetary mixer or the like. A method in which the conductive particles are uniformly dispersed in water or an organic solvent using a homogenizer or the like, then added to the binder resin, and kneaded and dispersed using a planetary mixer or the like. A method of diluting the binder resin with water, an organic solvent, or the like, adding the conductive particles, and kneading and dispersing the mixture using a planetary mixer or the like.
The viscosity (η 25) of the conductive material at 25 ℃ is preferably 30Pa · s or more, more preferably 50Pa · s or more, and is preferably 400Pa · s or less, more preferably 300Pa · s or less. When the viscosity of the conductive material at 25 ℃ is not lower than the lower limit and not higher than the upper limit, the insulation reliability between the electrodes can be further effectively improved, and the conduction reliability between the electrodes can be further effectively improved. The viscosity (. eta.25) can be appropriately adjusted depending on the kind and the amount of the components to be blended.
The viscosity (. eta.25) can be measured at 25 ℃ and 5rpm, for example, using an E-type viscometer ("TVE 22L", manufactured by Toyobo industries Co., Ltd.).
The conductive material according to the present invention can also be used as a conductive paste, a conductive film, or the like. When the conductive material according to the present invention is a conductive film, a film containing no conductive particles may be stacked on the conductive film containing conductive particles. The conductive paste is preferably an anisotropic conductive paste. The conductive film is preferably an anisotropic conductive film.
The content of the binder resin is preferably 10% by weight or more, more preferably 30% by weight or more, further preferably 50% by weight or more, particularly preferably 70% by weight or more, and preferably 99.99% by weight or less, more preferably 99.9% by weight or less, in 100% by weight of the conductive material. When the content of the binder resin is not less than the lower limit and not more than the upper limit, the conductive particles can be efficiently arranged between the electrodes, and the connection reliability of the connection target members connected by the conductive material can be further improved.
The content of the conductive particles is preferably 0.01 wt% or more, more preferably 0.1 wt% or more, and preferably 80 wt% or less, more preferably 60 wt% or less, further preferably 40 wt% or less, particularly preferably 20 wt% or less, and most preferably 10 wt% or less, in 100 wt% of the conductive material. When the content of the conductive particles is not less than the lower limit and not more than the upper limit, the connection resistance between the electrodes can be further effectively reduced. When the content of the conductive particles is not less than the lower limit and not more than the upper limit, the conduction reliability and insulation reliability between the electrodes can be further improved.
(connection structure)
The connection structure according to the present invention includes: the first connection target member has a first electrode on a surface thereof, the second connection target member has a second electrode on a surface thereof, and the connection portion connects the first connection target member and the second connection target member. In the connection structure according to the present invention, the material of the connection portion is the conductive particles or a conductive material containing the conductive particles and a binder resin. In the connection structure according to the present invention, the first electrode and the second electrode are electrically connected by the conductive particles.
The connection structure may be obtained by a step of disposing the conductive particles or the conductive material between the first connection target member and the second connection target member, and a step of performing conductive connection by thermocompression bonding. When the conductive particles contain the insulating material, the insulating material is preferably detached from the conductive particles at the time of the thermocompression bonding.
When the conductive particles are used alone, the connecting portion itself is a conductive particle. That is, the first member to be connected and the second member to be connected are connected by the conductive particles. The conductive material for obtaining the connection structure is preferably an anisotropic conductive material.
Fig. 5 is a front cross-sectional view schematically showing a connection structure using conductive particles according to the first embodiment of the present invention.
The connection structure 51 shown in fig. 5 includes: a first connection target member 52, a second connection target member 53, and a connection portion 54 connecting the first and second connection target members 52, 53. The connection portion 54 is formed by curing a conductive material containing the conductive particles 1. In fig. 5, the conductive particles 1 are schematically shown for convenience of illustration. Instead of the conductive particles 1, other conductive particles such as the conductive particles 11 and 21 may be used.
The first connection target member 52 has a plurality of first electrodes 52a on its surface (upper surface). The second connection target member 53 has a plurality of second electrodes 53a on its surface (lower surface). The first electrode 52a and the second electrode 53a are electrically connected by 1 or more conductive particles 1. Therefore, the first and second members to be connected 52 and 53 are electrically connected by the conductive particles 1.
The method for producing the connection structure is not particularly limited. As an example of a method for manufacturing a connection structure, there can be mentioned: a method of disposing the conductive material between the first connection target member and the second connection target member to obtain a laminated body, and then heating and pressing the laminated body. The pressure of the thermocompression bonding is preferably 40MPa or more, more preferably 60MPa or more, and preferably 90MPa or less, more preferably 70MPa or less. The heating temperature of the thermocompression bonding is preferably 80 ℃ or higher, more preferably 100 ℃ or higher, and preferably 140 ℃ or lower, more preferably 120 ℃ or lower. When the pressure and temperature of the thermocompression bonding are not lower than the lower limit and not higher than the upper limit, the conduction reliability and insulation reliability between the electrodes can be further improved. Further, when the conductive particles have the insulating particles, the insulating particles can be easily detached from the surfaces of the conductive particles at the time of conductive connection.
When the conductive particles have the insulating particles, the conductive particles and the insulating particles present between the first electrode and the second electrode can be excluded when the laminate is heated and pressurized. For example, the conductive particles and the insulating particles present between the first electrode and the second electrode can be easily detached from the surfaces of the conductive particles when the heating and the pressurizing are performed. When the heating and pressing are performed, a part of the insulating particles are detached from the surface of the conductive particles, and a part of the surface of the conductive portion is exposed. The first electrode and the second electrode can be electrically connected to each other through the conductive particles by contacting the first electrode and the second electrode with a portion of the conductive portion exposed on the surface thereof.
In the connection structure according to the present invention, since the conductive particles are used, when the heating and pressurizing are performed, the conductive particles are compressed, so that not only the conductive paths can be formed on the surfaces (conductive portions) of the conductive particles, but also the conductive paths can be formed by bringing conductive metals inside the conductive particles into contact with each other. As a result, even when the thickness of the conductive portion is small, the connection resistance between the electrodes in the vertical direction can be sufficiently reduced. Further, since the thickness of the conductive portion is small, aggregation of conductive particles can be suppressed, and the insulation reliability between laterally adjacent electrodes that cannot be connected can be effectively improved.
The first connection object member and the second connection object member are not particularly limited. Specific examples of the first connection object member and the second connection object member include electronic components such as a semiconductor chip, a semiconductor package, an LED chip, an LED package, a capacitor, and a diode, and electronic components such as a resin film, a printed circuit board, a flexible flat cable, a rigid flexible substrate, a glass epoxy substrate, and a circuit substrate such as a glass substrate. The first connection object component and the second connection object component are preferably electronic components.
Examples of the electrode provided on the connection target member include metal electrodes such as a gold electrode, a nickel electrode, a tin electrode, an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode, an SUS electrode, and a tungsten electrode. When the member to be connected is a flexible printed circuit board, the electrode is preferably a gold electrode, a nickel electrode, a tin electrode, a silver electrode, or a copper electrode. When the member to be connected is a glass substrate, the electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode, or a tungsten electrode. When the electrode is an aluminum electrode, the electrode may be an electrode formed only of aluminum, or an electrode in which an aluminum layer is laminated on a surface of a metal oxide layer. Examples of the material of the metal oxide layer include indium oxide doped with a trivalent metal element, zinc oxide doped with a trivalent metal element, and the like. Examples of the trivalent metal element include Sn, Al, and Ga.
The present invention will be specifically described below with reference to examples and comparative examples. The present invention is not limited to the following examples.
(example 1)
(1) Preparation of substrate particles
Polystyrene particles having an average particle diameter of 0.5 μm were prepared as seed particles. A mixed solution was prepared by mixing 3.9 parts by weight of the above polystyrene particles, 500 parts by weight of ion-exchanged water, and 120 parts by weight of a 5 wt% polyvinyl alcohol aqueous solution. Dispersing the mixed solution by using ultrasonic waves, putting the mixed solution into a liquid separation bottle, and stirring the mixed solution until the mixed solution is uniform.
Subsequently, 150 parts by weight of divinylbenzene (monomer component), 2 parts by weight of 2, 2' -azobis (methyl isobutyrate) (manufactured by Wako pure chemical industries, Ltd. "V-601"), and 2 parts by weight of benzoyl peroxide (manufactured by Niper BW, manufactured by Nikkiso Co., Ltd.) were mixed. In addition, 9 parts by weight of triethanolamine lauryl sulfate, 50 parts by weight of toluene (solvent), and 1100 parts by weight of ion-exchanged water were added to prepare an emulsion.
The emulsion was added to the above-mentioned mixed solution in the liquid separation flask in several portions, and stirred for 12 hours to allow the seed particles to absorb the monomer, thereby obtaining a suspension containing the seed particles swollen with the monomer.
Subsequently, 490 parts by weight of a 5% by weight aqueous polyvinyl alcohol solution was added, heating was started and the reaction was carried out at 85 ℃ for 9 hours, to obtain substrate particles having a particle diameter of 2.0. mu.m.
(2) Preparation of conductive particles
The obtained base particles were washed and dried, then 10 parts by weight of the base particles were dispersed in 1000 parts by weight of an alkaline solution containing 5% by weight of a palladium catalyst solution using an ultrasonic disperser, and then the solution was filtered to remove the base particles. Subsequently, the substrate particles were added to 100 parts by weight of a 1 wt% dimethylamine borane solution to activate the surfaces of the substrate particles. After the surface-activated substrate particles were sufficiently washed, they were added to 500 parts by weight of distilled water and dispersed to obtain a dispersion. Next, 1g of nickel particle slurry (average particle diameter 100nm) was added to the dispersion for 3 minutes to obtain a suspension containing the base material particles to which the core material was attached.
Further, a nickel plating solution (pH8.5) containing 0.35mol/L of nickel sulfate, 1.38mol/L of dimethylamine borane, and 0.5mol/L of sodium citrate was prepared.
While stirring the obtained suspension at 60 ℃, 300 parts by weight of the nickel plating solution was gradually dropped into the suspension to perform electroless nickel plating. Subsequently, the particles were taken out by filtering the suspension, washed and dried, thereby forming a nickel-boron conductive layer on the surface of the base material particles, and conductive particles having a conductive portion on the surface were obtained.
(3) Preparation of electroconductive Material (Anisotropic electroconductive paste)
The obtained conductive particles (7 parts by weight), bisphenol a type phenoxy resin (25 parts by weight), fluorene type epoxy resin (4 parts by weight), phenol novolac type epoxy resin (30 parts by weight), and SI-60L (manufactured by shin-chan chemical industries) were mixed, and defoaming and stirring were performed for 3 minutes to obtain a conductive material (anisotropic conductive paste).
(4) Preparation of connection Structure
A transparent glass substrate was prepared, on the upper surface of which an IZO electrode pattern (the first electrode, the metal on the electrode surface having a Vickers hardness of 100Hv) having an L/S of 10 μm/10 μm was formed. Further, a semiconductor chip was prepared in which an Au electrode pattern (the second electrode, the metal on the electrode surface, having a Vickers hardness of 50Hv) having an L/S of 10 μm/10 μm was formed on the lower surface. The obtained anisotropic conductive paste was applied to the transparent glass substrate to a thickness of 30 μm, thereby forming an anisotropic conductive paste layer. Subsequently, the semiconductor chip is stacked on the anisotropic conductive paste layer so that the electrodes face each other. Thereafter, while adjusting the temperature of the pressure heating head so that the anisotropic conductive paste layer becomes 100 ℃, the pressure heating head was placed on the upper surface of the semiconductor chip, and a pressure of 85MPa was applied to cure the anisotropic conductive paste layer at 100 ℃, thereby obtaining a connection structure.
(example 2)
Conductive particles, a conductive material, and a connection structure were obtained in the same manner as in example 1, except that the amount of the solvent was adjusted to 10 parts by weight at the time of preparing the base particles.
(example 3)
Conductive particles, a conductive material, and a connection structure were obtained in the same manner as in example 1, except that the amount of the solvent was adjusted to 70 parts by weight at the time of preparing the base particles.
(example 4)
A conductive material and a connection structure were obtained in the same manner as in example 1, except that the amount of the base material particles was adjusted to 5 parts by weight at the time of preparing the conductive particles.
(example 5)
A conductive material and a connection structure were obtained in the same manner as in example 1, except that the amount of the base material particles was adjusted to 2.5 parts by weight at the time of preparing the conductive particles.
(example 6)
The conductive particles obtained in example 1 were prepared. Further, a gold plating solution was prepared by adding 5g of potassium gold cyanide to 500g of a solution containing 10g/L of ethylenediamine 4 sodium acetate and 10g/L of sodium citrate. 10 parts by weight of the conductive particles obtained in example 1 were added to 500 parts by weight of the gold plating solution, and immersed at 70 ℃ for 30 minutes to perform electroless gold plating. Subsequently, the particles were taken out by filtering the suspension, washed and dried, thereby forming a nickel-boron-gold conductive layer on the surface of the base material particles, and conductive particles having a conductive portion on the surface were obtained. A conductive material and a connection structure were obtained in the same manner as in example 1, except that the obtained conductive particles were used.
(example 7)
To 200 parts by weight of distilled water, 10 parts by weight of the conductive particles obtained in example 1 were added and dispersed, thereby obtaining a suspension. Further, a palladium plating solution containing 10g/L of ethylenediamine, 3.0g/L of palladium sulfate and 5.0g/L of sodium formate was prepared. After the suspension was heated to 70 ℃, 700 parts by weight of the palladium plating solution was dropped in 10 minutes, thereby performing electroless palladium plating. Subsequently, the particles were taken out by filtering the suspension, washed and dried, thereby forming a nickel-boron-palladium conductive layer on the surface of the base material particles, and conductive particles having a conductive portion on the surface were obtained. A conductive material and a connection structure were obtained in the same manner as in example 1, except that the obtained conductive particles were used.
(example 8)
To 200 parts by weight of distilled water, 10 parts by weight of the conductive particles obtained in example 1 were added and dispersed, thereby obtaining a suspension. Further, a mixed solution containing 10g/L of potassium silver cyanide, 80g/L of potassium cyanide, 5g/L of ethylenediaminetetraacetic acid, and 20g/L of sodium hydroxide was adjusted to pH6 with sodium hydroxide, thereby preparing a silver plating solution. After the suspension was heated to 50 ℃, 700 parts by weight of the silver plating solution was dropped in 30 minutes to perform electroless silver plating. Subsequently, the particles were taken out by filtering the suspension, washed and dried, thereby forming a nickel-boron-silver conductive layer on the surface of the base material particles, and conductive particles having a conductive portion on the surface were obtained. A conductive material and a connection structure were obtained in the same manner as in example 1, except that the obtained conductive particles were used.
(example 9)
When the base material particles were prepared, the particle size of the seed particles was changed to obtain base material particles having a particle size of 1.0. mu.m. Conductive particles, a conductive material, and a connection structure were obtained in the same manner as in example 1, except that the obtained base particles were used and the amount of the obtained base particles was changed to 5 parts by weight.
(example 10)
When the base material particles were prepared, the particle size of the seed particles was changed to obtain base material particles having a particle size of 2.5 μm. Conductive particles, a conductive material, and a connection structure were obtained in the same manner as in example 1, except that the obtained base particles were used and the amount of the obtained base particles was changed to 12.5 parts by weight.
(example 11)
When the base material particles were prepared, the particle size of the seed particles was changed to obtain base material particles having a particle size of 3.0. mu.m. Conductive particles, a conductive material, and a connection structure were obtained in the same manner as in example 1, except that the obtained base particles were used and the amount of the obtained base particles was changed to 15 parts by weight.
(example 12)
When the base material particles were prepared, the particle size of the seed particles was changed to obtain base material particles having a particle size of 5.0. mu.m. Conductive particles, a conductive material, and a connection structure were obtained in the same manner as in example 1, except that the obtained base particles were used and the amount of the obtained base particles was changed to 25 parts by weight.
(example 13)
When the base material particles were prepared, the particle size of the seed particles was changed to obtain base material particles having a particle size of 10.0. mu.m. Conductive particles, a conductive material, and a connection structure were obtained in the same manner as in example 1, except that the obtained base particles were used and the amount of the obtained base particles was changed to 50 parts by weight.
(example 14)
(1) Preparation of insulating particles
The following monomer composition was put into a 1000mL liquid-separation bottle equipped with a four-port separable cap, a stirring blade, a three-way cock, a cooling tube, and a temperature probe, and then distilled water was added thereto so that the solid content of the following monomer composition became 10% by weight, and the mixture was stirred at 200rpm and polymerized at 60 ℃ for 24 hours under a nitrogen atmosphere. The monomer composition contained 360mmol of methyl methacrylate, 45mmol of glycidyl methacrylate, 20mmol of p-styryldiethylphosphine, 13mmol of ethylene glycol dimethacrylate, 0.5mmol of polyvinylpyrrolidone, and 1mmol of 2, 2' -azobis {2- [ N- (2-carboxyethyl) amidino ] propane }. After the reaction, the reaction mixture was freeze-dried to obtain insulating particles (particle size: 360nm) having phosphorus atoms derived from p-styryldiethylphosphine on the surface.
(2) Preparation of conductive particles with insulating particles
The insulating particles obtained in (1) above were dispersed in distilled water under ultrasonic irradiation to obtain a 10 wt% aqueous dispersion of the insulating particles. 10g of the conductive particles obtained in example 1 were dispersed in 500mL of distilled water, and 1g of a 10 wt% aqueous dispersion of insulating particles was added thereto, followed by stirring at room temperature for 8 hours. After filtration through a 3 μm mesh filter, the resultant was washed with methanol and dried to obtain conductive particles with insulating particles. A conductive material and a connection structure were obtained in the same manner as in example 1, except that the obtained conductive particles with insulating particles were used.
(example 15)
Conductive particles, a conductive material, and a connection structure were obtained in the same manner as in example 1, except that nickel particle slurry (average particle diameter 100nm) was not used in the preparation of the conductive particles.
(example 16)
Conductive particles, a conductive material, and a connection structure were obtained in the same manner as in example 1, except that the amount of the catalyst solution was changed to 200 parts by weight when the conductive particles were prepared.
(example 17)
Conductive particles, a conductive material, and a connection structure were obtained in the same manner as in example 1, except that the amount of the catalyst solution was changed to 500 parts by weight when the conductive particles were prepared.
(example 18)
The conductive particles obtained in example 15 were prepared. Using the conductive particles obtained in example 15, conductive particles with insulating particles were obtained in the same manner as in example 14. A conductive material and a connection structure were obtained in the same manner as in example 1, except that the obtained conductive particles with insulating particles were used.
Comparative example 1
Conductive particles, a conductive material, and a connection structure were obtained in the same manner as in example 1, except that the solvent was changed from toluene to ethanol in the production of the base particles.
Comparative example 2
Conductive particles, a conductive material, and a connection structure were obtained in the same manner as in comparative example 1, except that the amount of the base material particles was set to 5 parts by weight at the time of preparing the conductive particles.
Comparative example 3
The conductive particles obtained in comparative example 2 were prepared. Using the conductive particles obtained in comparative example 2, conductive particles with insulating particles were obtained in the same manner as in example 14. A conductive material and a connection structure were obtained in the same manner as in example 1, except that the obtained conductive particles with insulating particles were used.
Comparative example 4
Conductive particles, a conductive material, and a connection structure were obtained in the same manner as in comparative example 1, except that the amount of the base material particles was 20 parts by weight in the preparation of the conductive particles.
(evaluation)
(1) Particle size of base material particles and conductive particles
The particle diameters of the substrate particles and the conductive particles were calculated using a particle size distribution measuring apparatus ("Multisizer 4" manufactured by Beckman Coulter corporation). Specifically, the average value is obtained by measuring the particle diameter of about 100000 base particles or conductive particles.
(2) BET specific surface area of substrate particles
For the obtained substrate particles, "NOVA 4200 e" manufactured by Cantachrome Instruments was used to measure the adsorption isotherm of nitrogen. The specific surface area of the substrate particles was calculated from the measurement results according to the BET method.
(3) Total pore volume of substrate particles
For the obtained substrate particles, "NOVA 4200 e" manufactured by Cantachrome Instruments was used to measure the adsorption isotherm of nitrogen. The total pore volume of the substrate particles was calculated from the measurement results according to the BJH method.
(4) Average pore diameter of substrate particles
For the obtained substrate particles, "NOVA 4200 e" manufactured by Cantachrome Instruments was used to measure the adsorption isotherm of nitrogen. From the measurement results, the average pore diameter of the substrate particles was calculated according to the BJH method.
(5) Porosity of substrate particles
For the resulting substrate particles, the cumulative amount of penetration of mercury with respect to the pressure applied by mercury intrusion method was measured using a mercury porosimeter "Poremaster 60" manufactured by Cantachrome Instruments. From the measurement results, the porosity of the substrate particles was calculated.
(6) Content of conductive metal in 100 vol% of conductive particles
With respect to the obtained conductive particles, the content of the conductive metal in 100 vol% of the conductive particles was calculated by the following equation.
The content (% by volume) of the conductive metal in 100% by volume of the conductive particles is D × M/Dmetal × 100
D: specific gravity of conductive particles
M: metallization ratio of conductive particles
Dmestal: specific gravity of conductive metal
The metallization ratio of the conductive particles was calculated by using an ICP emission spectrometer ("ICP-AES", horiba ltd.). The specific gravity of the conductive particles was measured using a true densitometer ("Acupic" manufactured by shimadzu corporation). The specific gravity of the conductive metal is calculated using a value specific to the metal.
(7) The content of the conductive metal contained in the base material particles in 100 vol% of the conductive particles, and the content of the conductive metal contained in the conductive part in 100 vol% of the conductive particles
With respect to the obtained conductive particles, the content of the conductive metal contained in the conductive portion in 100 vol% of the conductive particles was calculated by the following equation.
The content (% by volume) of the conductive metal contained in the conductive portion in 100% by volume of the conductive particles is D × M1/Dmetal×100
M1: metallization ratio of conductive part
Dmestal: specific gravity of conductive metal
The metallization ratio M of the conductive portion1The content (g) of the conductive metal in the conductive portion of 1g of the conductive particles expressed by the ratio, that is, the content (g) of the conductive metal in the conductive portion of 1g of the conductive particles/1 g of the conductive particles.
The metallization ratio M of the conductive portion1Is calculated by the following two relations.
A＝[(r+t)3-r3]d1/r3d2 (1)
A＝M1/(1-M1) (2)
r: radius of substrate particle
t: thickness of conductive part
d1: specific gravity of conductive metal
d2: specific gravity of substrate particles
M1: metallization ratio of conductive part
Then, with respect to the obtained conductive particles, the content of the conductive metal contained in the base material particles in 100 vol% of the conductive particles was calculated by the following equation.
The content (% by volume) of the conductive metal contained in the base material particles in 100% by volume of the conductive particles is equal to the content (% by volume) of the conductive metal in 100% by volume of the conductive particles-the content (% by volume) of the conductive metal contained in the conductive portion in 100% by volume of the conductive particles is D × M/Dmetal × 100-D × M1/Dmetal×100＝D×(M-M1)/Dmetal×100
D: specific gravity of conductive particles
M: metallization ratio of conductive particles
M1: metallization ratio of conductive part
Dmestal: specific gravity of conductive metal
(8) Ratio of number of conductive particles in which conductive metal is present (first ratio and second ratio)
Using the obtained conductive material, it was calculated as follows that when a region R1 is defined as a region from the outer surface of the base material particle toward the center of the base material particle at a distance of 1/2, the ratio (first ratio) of the number of conductive particles in which the conductive metal is present in the region R1 of the base material particle to the total number of the conductive particles is 100%. Further, using the obtained conductive material, it was calculated as follows that when a region at a distance of 1/2 from the center of the base material particle toward the outer surface of the base material particle was defined as a region R2, the ratio (second ratio) of the number of conductive particles in which the conductive metal was present in the region R2 of the base material particle to the total number of the conductive particles was 100%.
The conductive particles are recovered by filtering the resulting conductive material. The conductive particles were added to and dispersed in "Technobit 4000" manufactured by Kulzer, so that the content of the recovered conductive particles was 30 wt%, to prepare an insert resin for conductive particle inspection. One cross section of the conductive particles was cut out so as to pass through the vicinity of the center of the conductive particles dispersed in the embedding resin for inspection using an ion milling apparatus ("IM 4000" manufactured by hitachi high new technology corporation). Subsequently, the presence or absence of the conductive metal in the cross section of the base material particle was measured by an energy dispersive X-ray analyzer (EDS) using a field emission transmission electron microscope ("JEM-2010 FEF", manufactured by japan electronics corporation), and thereby the distribution result of the conductive metal in the particle diameter direction of the base material particle was obtained. The first ratio and the second ratio were calculated from the distribution results of the conductive metal in 20 arbitrarily selected conductive particles.
(9) Modulus of elasticity in compression of conductive particles
The resulting conductive particles were measured for the above-mentioned compressive modulus of elasticity (10% K value and 30% K value) by the above-mentioned method using a micro compression tester ("Fisherscope H-100" manufactured by Fisher corporation). From the measurement results, 10% K value and 30% K value were calculated.
(10) Agglomeration of conductive particles
The obtained conductive material was observed to confirm whether or not aggregation of the conductive particles occurred. The aggregation of the conductive particles was determined under the following conditions.
[ criterion for determining aggregation of conductive particles ]
O: no aggregation of conductive particles occurs
And (delta): the conductive particles are slightly aggregated
X: aggregation of conductive particles occurs
(11) Adhesion of conductive part in conductive particle
1g of the obtained conductive particles and 50g of zirconia beads having a diameter of 1mm were put in a 100mL mayonnaise bottle. Subsequently, 10mL of toluene was added to the mayonnaise bottle. The inside of the mayonnaise bottle was stirred at 300rpm for 10 minutes using a stirrer (THERE-ONE MOTOR). After the stirring, the conductive particles and the zirconia beads were separated, and the conductive particles were observed with a Scanning Electron Microscope (SEM), and it was confirmed whether or not the conductive portion was peeled off from the conductive particles. The adhesion of the conductive part to the conductive particles was determined under the following conditions.
[ criterion for determining adhesion of conductive part to conductive particle ]
O: the conductive part in the conductive particle is not peeled off
X: peeling of the conductive part in the conductive particles
(12) Connecting resistance (between the upper and lower electrodes)
The connection resistance between the upper and lower electrodes of the obtained 20 connection structures was measured by the four-terminal method. The average value of the connection resistance was calculated. In addition, the connection resistance can be obtained by measuring the voltage when a constant current flows, from the relationship of voltage to current × resistance. The connection resistance was determined according to the following criteria.
[ criterion for determining connection resistance ]
O ≈: the average value of the connection resistance is 1.5 omega or less
O ^ O: the average value of the connection resistance is more than 1.5 omega and less than 2.0 omega
O: the average value of the connection resistance is more than 2.0 omega and less than 5.0 omega
And (delta): the average value of the connection resistance is more than 5.0 omega and less than 10 omega
X: the average value of the connection resistance is more than 10 omega
(13) Insulation reliability (between adjacent electrodes in transverse direction)
By measuring the resistance value with a tester, the presence or absence of leakage between adjacent electrodes was evaluated for 20 connection structure bodies obtained in the above evaluation of (12) connection reliability. Insulation reliability was evaluated according to the following criteria.
O ≈: resistance value of 108The number of omega-or higher connecting structures is 20
O ^ O: resistance value of 108The number of omega-or higher connecting structures is 18 or more and less than 20
O: resistance value of 108The number of omega-or higher connecting structures is 15 or more and less than 18
And (delta): resistance value of 108The number of omega-or higher connecting structures is 10 or more and less than 15
X: resistance value of 108The number of omega-or higher connecting structures is less than 10
The results are shown in tables 1 to 4 below.
[ Table 1]
[ Table 2]
[ Table 3]
[ Table 4]
Description of the figures
1 conductive particle
2 base material particle
3 conductive part
11 conductive particles
11a projection
12 conductive part
12a protrusion
13 core material
14 insulating material
21 conductive particle
21a protrusion
22 conductive part
22a protrusion
22A first conductive part
22Aa protuberance
22B second conductive part
22Ba projection
51 connection structure
52 first connection object member
52a first electrode
53 second connection object part
53a second electrode
54 connecting part
Claims (15)
1. A conductive particle comprising: a substrate particle, and a conductive portion disposed on a surface of the substrate particle, wherein,
the base material particle contains a conductive metal inside the base material particle.
2. The conductive particle according to claim 1, wherein a porosity of the base material particle is 10% or more.
3. The conductive particle according to claim 1 or 2, wherein the conductive metal contains nickel, gold, palladium, silver, or copper.
4. The conductive particle according to any one of claims 1 to 3, wherein the conductive portion contains nickel, gold, palladium, silver, or copper.
5. The conductive particle according to any one of claims 1 to 4, wherein the conductive particle has a 10% K value of 100N/mm2Above 25000N/mm2The following.
6. The conductive particle according to any one of claims 1 to 5, wherein the conductive particle has a 30% K value of 100N/mm2Above and 15000N/mm2The following.
7. The conductive particle according to any one of claims 1 to 6, wherein a ratio of a 10% K value of the conductive particle to a 30% K value of the conductive particle is 1.5 or more and 5 or less.
8. The conductive particle according to any one of claims 1 to 7, wherein a particle diameter of the conductive particle is 0.1 μm or more and 1000 μm or less.
9. The conductive particle according to any one of claims 1 to 8, wherein a content of the conductive metal contained in the base material particle is 0.1 vol% or more and 30 vol% or less in 100 vol% of the conductive particle.
10. The conductive particle according to any one of claims 1 to 9, which has a protrusion on an outer surface of the conductive portion.
11. The conductive particle according to any one of claims 1 to 10, which has an insulating material provided on an outer surface of the conductive portion.
12. A conductive material comprising the conductive particles according to any one of claims 1 to 11 and a binder resin.
13. The conductive material according to claim 12, which contains a plurality of the conductive particles,
when a region at a distance of 1/2 from the outer surface of the base material particle toward the center thereof is defined as a region R1, the proportion of the number of conductive particles in which the conductive metal is present in the region R1 of the base material particle is 50% or more of the total number of conductive particles of 100%.
14. The conductive material according to claim 12 or 13, which contains a plurality of the conductive particles,
when a region at a distance of 1/2 from the center of the base material particle toward the outer surface of the base material particle is defined as a region R2, the proportion of the number of conductive particles in which the conductive metal is present in the region R2 of the base material particle is 5% or more of the total number of conductive particles of 100%.
15. A connection structure body is provided with:
a first member to be connected having a first electrode on a surface thereof,
A second member to be connected having a second electrode on a surface thereof,
And a connecting portion that connects the first connection target member and the second connection target member, wherein,
the material of the connecting part is the conductive particle according to any one of claims 1 to 11 or a conductive material containing the conductive particle and a binder resin,
the first electrode and the second electrode are electrically connected by the conductive particles.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-035986 | 2019-02-28 | ||
| JP2019035986 | 2019-02-28 | ||
| PCT/JP2020/008458 WO2020175691A1 (en) | 2019-02-28 | 2020-02-28 | Conductive particles, conductive material, and connection structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113519031A true CN113519031A (en) | 2021-10-19 |
| CN113519031B CN113519031B (en) | 2024-09-13 |
Family
ID=72239848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080017319.9A Active CN113519031B (en) | 2019-02-28 | 2020-02-28 | Conductive particle, conductive material, and connection structure |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2020175691A1 (en) |
| KR (1) | KR20210130152A (en) |
| CN (1) | CN113519031B (en) |
| TW (1) | TWI841692B (en) |
| WO (1) | WO2020175691A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022092188A1 (en) * | 2020-10-28 | 2022-05-05 | 積水化学工業株式会社 | Electroconductive particles, electroconductive material, and connection structure |
| JP2023146209A (en) * | 2022-03-29 | 2023-10-12 | デクセリアルズ株式会社 | Connection structure and manufacturing method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020175316A1 (en) * | 2001-03-06 | 2002-11-28 | Fujitsu Limited | Conductive particles, conductive composition, electronic device, and electronic device manufacturing method |
| JP2005203319A (en) * | 2004-01-19 | 2005-07-28 | Sekisui Chem Co Ltd | Coated conductive particle, anisotropic conductive material, and conductive connection structure |
| JP2015044987A (en) * | 2013-08-02 | 2015-03-12 | 積水化学工業株式会社 | Base particle, conductive particle, conductive material, and connection structure |
| JP2016015312A (en) * | 2014-06-11 | 2016-01-28 | 積水化学工業株式会社 | Conductive particle, method of producing conductive particle, conductive material and connection structure |
| JP2016085988A (en) * | 2014-10-28 | 2016-05-19 | 積水化学工業株式会社 | Insulative particle-adhered conductive particle and production method thereof, conductive material, and connection structure |
| CN107112072A (en) * | 2014-11-17 | 2017-08-29 | 积水化学工业株式会社 | Electroconductive particle, conductive material and connection structural bodies |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004124176A (en) * | 2002-10-02 | 2004-04-22 | Asahi Glass Co Ltd | Conductive particle and method for manufacturing the same |
| JP4563110B2 (en) * | 2004-08-20 | 2010-10-13 | 積水化学工業株式会社 | Method for producing conductive fine particles |
| JP4852311B2 (en) * | 2006-01-12 | 2012-01-11 | 積水化学工業株式会社 | Conductive particle, anisotropic conductive material, and conductive connection structure |
| JP5074082B2 (en) * | 2007-04-16 | 2012-11-14 | ソニーケミカル＆インフォメーションデバイス株式会社 | Conductive particle body, anisotropic conductive connecting material using the same, and method for producing conductive particle body |
| JP4957695B2 (en) | 2007-10-02 | 2012-06-20 | 日立化成工業株式会社 | Conductive particle, method for producing the same, method for producing insulating coated conductive particle, and anisotropic conductive adhesive film |
| JP5457655B2 (en) * | 2008-09-17 | 2014-04-02 | 積水化学工業株式会社 | Conductive fine particles, anisotropic conductive material, and conductive connection structure |
| JP2013020721A (en) | 2011-07-07 | 2013-01-31 | Hitachi Chem Co Ltd | Conductive particle |
| CN105513673B (en) * | 2016-02-03 | 2017-07-07 | 郑州职业技术学院 | A kind of conducting particles and preparation method thereof |
-
2020
- 2020-02-28 CN CN202080017319.9A patent/CN113519031B/en active Active
- 2020-02-28 JP JP2020538860A patent/JPWO2020175691A1/en active Pending
- 2020-02-28 KR KR1020217027053A patent/KR20210130152A/en not_active Application Discontinuation
- 2020-02-28 WO PCT/JP2020/008458 patent/WO2020175691A1/en active Application Filing
- 2020-03-02 TW TW109106737A patent/TWI841692B/en active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020175316A1 (en) * | 2001-03-06 | 2002-11-28 | Fujitsu Limited | Conductive particles, conductive composition, electronic device, and electronic device manufacturing method |
| JP2005203319A (en) * | 2004-01-19 | 2005-07-28 | Sekisui Chem Co Ltd | Coated conductive particle, anisotropic conductive material, and conductive connection structure |
| JP2015044987A (en) * | 2013-08-02 | 2015-03-12 | 積水化学工業株式会社 | Base particle, conductive particle, conductive material, and connection structure |
| JP2016015312A (en) * | 2014-06-11 | 2016-01-28 | 積水化学工業株式会社 | Conductive particle, method of producing conductive particle, conductive material and connection structure |
| JP2016085988A (en) * | 2014-10-28 | 2016-05-19 | 積水化学工業株式会社 | Insulative particle-adhered conductive particle and production method thereof, conductive material, and connection structure |
| CN107112072A (en) * | 2014-11-17 | 2017-08-29 | 积水化学工业株式会社 | Electroconductive particle, conductive material and connection structural bodies |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20210130152A (en) | 2021-10-29 |
| TW202044283A (en) | 2020-12-01 |
| JPWO2020175691A1 (en) | 2021-12-23 |
| TWI841692B (en) | 2024-05-11 |
| WO2020175691A1 (en) | 2020-09-03 |
| CN113519031B (en) | 2024-09-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101942602B1 (en) | Conductive particles, conductive material, and connection structure | |
| TWI498405B (en) | An electrically conductive particles having an insulating particle, an anisotropic conductive material, and a connecting structure | |
| CN103748637B (en) | Electroconductive particle, conductive material and connection structural bodies | |
| CN109983543B (en) | Conductive particle, conductive material, and connection structure | |
| CN112313758B (en) | Conductive particle, conductive material, and connection structure | |
| CN111954909B (en) | Conductive particle with insulating particles, conductive material, and connection structure | |
| CN113519031B (en) | Conductive particle, conductive material, and connection structure | |
| WO2022092188A1 (en) | Electroconductive particles, electroconductive material, and connection structure | |
| WO2017199987A1 (en) | Conductive particle, conductive material, and connection structure | |
| JP7180981B2 (en) | Conductive particles, conductive materials and connecting structures | |
| WO2021182617A1 (en) | Conductive particles, conductive material and connection structure | |
| CN113950778A (en) | Conductive particle, conductive material, and connection structure | |
| CN112352294B (en) | Conductive particle with insulating particles, conductive material, and connection structure | |
| WO2022260158A1 (en) | Coated particles, resin composition, and connection structure | |
| WO2024034386A1 (en) | Electroconductive particles, electroconductive material, and connection structure | |
| JP7328856B2 (en) | Conductive particles, conductive materials and connecting structures | |
| CN112105986B (en) | Base material particle, conductive material, and connection structure | |
| CN111902884B (en) | Conductive particle, method for producing same, conductive material, and connection structure | |
| CN117461095A (en) | Coated particle, method for producing coated particle, resin composition, and connection structure | |
| WO2019194133A1 (en) | Conductive particles having insulating particles, production method for conductive particles having insulating particles, conductive material, and connection structure | |
| CN117296109A (en) | Conductive particle, conductive material, and connection structure | |
| JP2020013787A (en) | Conductive material and connection structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |