CN113481478A - Sputtering coating device and film forming method - Google Patents
Sputtering coating device and film forming method Download PDFInfo
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- CN113481478A CN113481478A CN202110697536.3A CN202110697536A CN113481478A CN 113481478 A CN113481478 A CN 113481478A CN 202110697536 A CN202110697536 A CN 202110697536A CN 113481478 A CN113481478 A CN 113481478A
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 61
- 238000000576 coating method Methods 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000011248 coating agent Substances 0.000 title abstract description 25
- 230000007246 mechanism Effects 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000010408 film Substances 0.000 claims abstract description 32
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 230000005684 electric field Effects 0.000 claims description 11
- 239000011148 porous material Substances 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 10
- 239000012495 reaction gas Substances 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 230000009471 action Effects 0.000 claims description 6
- 239000013077 target material Substances 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000007888 film coating Substances 0.000 claims description 3
- 238000009501 film coating Methods 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 2
- 238000001771 vacuum deposition Methods 0.000 abstract description 2
- 230000006872 improvement Effects 0.000 description 9
- 239000007789 gas Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000009776 industrial production Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 generally Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a sputtering coating device and a film forming method, and relates to the technical field of vacuum coating. A sputtering coating device and a film forming method comprise a sputtering source, wherein the sputtering source comprises electrode plate mechanisms, cathode rods and target tubes, the target tubes are wrapped outside the cathode rods to form rod-shaped cathode target bodies, the number of the electrode plate mechanisms is two, the two electrode plate mechanisms are oppositely arranged, slits are formed between the electrode plate mechanisms, cathode target bodies and air hole structures are uniformly distributed in the slits, and the air hole structures are uniformly distributed between the cathode target bodies. According to the invention, the electrode and the substrate are arranged laterally, so that the damage of plasma to the surface film layer of the substrate and the components such as a thin film transistor, a light emitting diode and an organic electroluminescent display due to the fact that the target and the cathode thereof are opposite to the substrate can be effectively prevented, the quality of the product is indirectly improved, and the reject ratio of the product is reduced.
Description
Technical Field
The invention relates to the technical field of vacuum coating, in particular to a sputtering coating device and a film forming method.
Background
The sputtering coating technology is that ions are used for bombarding the surface of a target material, the phenomenon that atoms of the target material are knocked out is called sputtering, the atoms generated by sputtering are deposited on the surface of a substrate to form a film, generally, gas ionization is generated by gas discharge, positive ions of the gas bombard a cathode target body at a high speed under the action of an electric field, atoms or radicals of the cathode target body are knocked out, and the atoms or radicals fly to the surface of the substrate to be coated to form a film.
The existing sputtering coating equipment usually forms an anode substrate by jointing a substrate in a sputtering source with a counter electrode, forms a cathode target plate by jointing a target with a cathode, oppositely places the two plates, further fills inert gas and reaction gas between the anode substrate and the cathode target plate at a certain flow rate, forms plasma by the inert gas with certain pressure under an electric field applied between the cathode and the counter electrode, bombards the target by the plasma generated by the inert gas under the action of the electric field, and sputters target atoms or groups to form a film on the surface of the substrate, the plasma generated by the film forming mode of the sputtering source not only easily damages a product film layer and components such as a thin film transistor, a light emitting diode and an organic electroluminescent display, but also is difficult to realize the production requirement of continuously depositing the film with large area by various materials in the same cavity, is not beneficial to the industrial production in batch, and provides a sputtering coating device and a film forming method.
Disclosure of Invention
The present invention is directed to a sputter coating apparatus and a film forming method, which solve the problems of the background art mentioned above.
In order to achieve the purpose, the invention provides the following technical scheme: the utility model provides a sputter coating device, includes the sputter source, and the sputter source includes electrode plate mechanism, cathode bar and target pipe, the target pipe parcel forms rodlike cathode target body in the outside of cathode bar, the quantity of electrode plate mechanism is two, and two electrode plate mechanism place in opposite directions, be formed with the slit between the electrode plate mechanism, evenly distributed has cathode target body and pore structure in the slit, pore structure evenly distributed is between the cathode target body.
As an improvement of the sputtering coating device, the air hole structure can be a tubular mechanism.
As an improvement of the sputtering coating device, the air hole structure can be an air hole penetrating through the electrode plate mechanism.
As an improvement of the sputtering coating device, the cross section of the cathode target body is elliptical or circular.
As an improvement of the sputtering coating device, the electrode plate mechanism can be a counter electrode plate.
As an improvement of the sputtering coating device, the electrode plate mechanism comprises a negative counter plate, a magnet plate is arranged on one side of the negative counter plate, which is far away from the slit, and a target material plate is arranged on the other side of the negative counter plate, which is close to the slit.
As an improvement of the sputtering coating device, the electrode plate mechanism further comprises a counter electrode which can be arranged at any position including but not limited to the outer side of the substrate.
As an improvement of the sputtering coating device, the magnet plate is divided into blocks or is integrated.
As an improvement of the sputtering coating device, the distance between the magnet plate and the target material plate is adjustable, and the magnet plate can set the speed and the action in the coating process.
As an improvement of the sputtering coating device, the cathode target body can rotate along the axis line or swing left and right in the slit.
A film forming method of a sputtering film coating device comprises the following film forming steps:
s1: placing two substrates on two sides of the sputtering source respectively, and forming a clearance area between the substrates and the sputtering source;
s2: uniformly conveying inert gas and reaction gas to the slit through the air hole structure;
s3: starting the device, wherein the power supply of the electrode plate mechanism and the cathode bar is switched on at the moment, and the substrate reciprocates or moves in a single direction along the clearance area at two sides of the sputtering source at a fixed speed;
s4: and applying an electric field to the slit by the electrified electrode plate mechanism and the cathode bar, enabling the inert gas and the reaction gas to form plasma to sputter the target tube by the applied electric field, and enabling sputtered target atoms or target groups to pass through the gap area to be deposited on the surface of the substrate to form a thin film until the thin film reaches the target film thickness.
It is to be noted that the inert gas in the step S2 includes argon, and the reaction gas includes oxygen.
It should be noted that the power supply is an independently controlled dc power supply or a radio frequency power supply, and both the electrode plate mechanism and the cathode bar can be divided into a plurality of sub-electrodes for independent control.
Compared with the prior art, the invention has the beneficial effects that:
(1) the sputtering coating device has the advantages that the electrodes and the substrate are arranged in the lateral direction, so that the damage of plasma to the surface film layer of the substrate and components such as a thin film transistor, a light emitting diode and an organic electroluminescent display due to the fact that the target and the cathode of the target are opposite to the substrate can be effectively prevented, the quality of products is indirectly improved, and the reject ratio of the products is reduced.
(2) This sputter coating device, based on the linear design of sputter source, consequently the base plate can remove along the clearance region, and the continuous inline coating of multiple rete can be realized to a plurality of linear sputter sources that the series connection set up, and gaseous toward the outdiffusion of having promoted through the negative pole target body that can move is very big, can improve coating film rate and target utilization ratio, and then makes its production demand that not only is convenient for realize the continuous large tracts of land deposit film of multiple material, does benefit to batched industrial production simultaneously.
(3) The film forming method of the sputtering coating device can adjust the yield of target atoms or groups by controlling the electric field intensity of a plurality of cathodes, improve the concentration distribution of target atoms or groups overflowing from slits, further improve the film thickness uniformity, simultaneously reduce the adhesion of the target atoms or groups inside a linear sputtering source, and improve the yield and the deposition rate of target atoms or groups to be deposited.
(4) The film forming method of the sputtering coating device can adjust the distance between the magnet and the target, the magnet plate can set actions such as left-right swinging or up-down movement in the coating process, and the speed can be set, so that the uniformity of sputtered particles of the target can be improved, and the utilization rate of the target is further improved.
Drawings
FIG. 1 is a schematic cross-sectional view of a conventional sputter source;
FIG. 2 is a schematic cross-sectional view of a sputter source according to a first embodiment of the present invention;
FIG. 3 is a top view of a sputter source according to a first embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a sputter source according to a second embodiment of the present invention;
FIG. 5 is a top view of a sputter source according to a second embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view of a sputter source according to a third embodiment of the present invention;
FIG. 7 is a top view of a sputter source according to a second embodiment of the present invention.
In the figure: 1. an electrode plate mechanism; 2. a cathode bar; 3. a target tube; 4. a substrate; 5. a pore structure; 6. a slit; 7. a gap region; 8. a magnet plate; 9. a target plate.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that in the description of the present invention, the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, which are only for convenience of description and simplification of description, and do not indicate or imply that the referred device or element must have a specific orientation, be configured in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
Further, it will be appreciated that the dimensions of the various elements shown in the figures are not drawn to scale, for ease of description, and that the thickness or width of some layers may be exaggerated relative to other layers, for example.
It should be noted that like reference numerals and letters refer to like items in the following figures, and thus, once an item is defined or illustrated in one figure, it will not need to be further discussed or illustrated in detail in the description of the following figure.
The first embodiment is as follows:
as shown in fig. 2 and 3, the present invention provides a technical solution: the utility model provides a sputter coating device, includes the sputter source, and the sputter source includes electrode plate mechanism 1, cathode bar 2 and target pipe 3, and target pipe 3 parcel forms the bar-like negative pole target body in the outside of cathode bar 2, and the quantity of electrode plate mechanism 1 is two, and two electrode plate mechanisms 1 place in opposite directions, is formed with slit 6 between the electrode plate mechanism 1, and evenly distributed has cathode target body and pore structure 5 in the slit 6, and pore structure 5 evenly distributed is between the cathode target body.
It should be noted that the air hole structure 5 in this embodiment is a tubular structure, which is alternately distributed with the cathode target body in the slit 6 at intervals, the cross section of the cathode target body is an ellipse, the electrode plate mechanism 1 is a counter electrode plate, and the cathode target body in this embodiment can rotate along the axial line thereof or swing left and right in the slit 6.
Example two:
as shown in fig. 4 and 5, the present invention provides a technical solution: the utility model provides a sputter coating device, includes the sputter source, and the sputter source includes electrode plate mechanism 1, cathode bar 2 and target pipe 3, and 3 parcel of target pipe form bar-shaped cathode target bodies in the outside of cathode bar 2, and the quantity of electrode plate mechanism 1 is two, and two electrode plate mechanism 1 places in opposite directions, is formed with slit 6 between the electrode plate mechanism 1, and evenly distributed has cathode target body and pore structure 5 in the slit 6, and pore structure 5 evenly distributed is between the cathode target body.
In the present embodiment, the air hole structure 5 is an air hole penetrating through the electrode plate mechanism 1, the air hole and the cathode target are alternately distributed in the slit 6 at intervals, the cross section of the cathode target is circular, the electrode plate mechanism 1 is a counter electrode plate, and the cathode target can rotate along the axial lead thereof or swing left and right in the slit 6.
Example three:
as shown in fig. 6 and 7, the present invention provides a technical solution: the utility model provides a sputter coating device, includes the sputter source, and the sputter source includes electrode plate mechanism 1, cathode bar 2 and target pipe 3, and 3 parcel of target pipe form bar-shaped cathode target bodies in the outside of cathode bar 2, and the quantity of electrode plate mechanism 1 is two, and two electrode plate mechanism 1 places in opposite directions, is formed with slit 6 between the electrode plate mechanism 1, and evenly distributed has cathode target body and pore structure 5 in the slit 6, and pore structure 5 evenly distributed is between the cathode target body.
It should be noted that the air hole structure 5 in this embodiment is an air hole penetrating through the electrode plate mechanism 1, the cross section of the cathode target body is circular, the electrode plate mechanism 1 includes a counter cathode plate, a magnet plate 8 is disposed on one side of the counter cathode plate away from the slit 6, and a target plate 9 is disposed on the other side of the counter cathode plate close to the slit 6, the electrode plate mechanism 1 further includes a counter electrode, and the counter electrode can be disposed at any place, including and not limited to the outer side of the substrate 4.
It should be noted that the magnet plate 8 is divided into blocks, the distance between the magnet plate 8 and the target plate 9 is adjustable, the magnet plate 8 can set the speed and motion during the coating process, and the cathode target can rotate along the axis or swing left and right in the slit 6.
In this embodiment, the electric field intensity of the three cathodes can be controlled to adjust the target output rate, so as to improve the concentration distribution of target atoms or groups overflowing from the opening area of the slit 6 and entering the gap area 7, further improve the uniformity of the film thickness, reduce the adhesion of the target atoms or groups to the inside of the linear sputtering source, improve the output rate and deposition rate of the target atoms or groups, and adjust the distance between the magnet plate 8 and the target plate 9, so that the magnet plate 8 can set actions in the film coating process, such as swinging left and right or moving up and down, and the speed can be set, thereby improving the uniformity of particles sputtered from the target, and further improving the target utilization rate.
The sputtering source of the first to third embodiments comprises the following steps:
two substrates 4 are respectively placed on two sides of any one sputtering source of the first embodiment, the second embodiment or the third embodiment, a gap area 7 is formed between the substrates 4 and the sputtering source, the distance between the substrates 4 and the opening of the slit 6 can be set to form the gap area 7, further, argon and oxygen are uniformly conveyed to the slit 6 through the air hole structure 5, the length direction of the opening of the slit 6 of the sputtering source close to the two sides of the substrates can cover the size of the substrates 4, the width direction of the opening of the slit 6 can not cover the size of the substrates 4, and a device is further opened, at the moment, independently controlled direct current power supplies of the electrode plate mechanism 1 and the cathode rod 2 are switched on, the electrode plate mechanism 1 and the cathode rod 2 can be respectively divided into a plurality of sub-electrodes to be independently controlled, the substrates 4 carry out reciprocating movement or unidirectional movement along the gap areas 7 on the two sides of the sputtering source according to a fixed speed, and further electrified electrode plate mechanism 1 and cathode rod 2 apply an electric field on the slit 6, the applied electric field enables the inert gas and the reaction gas to form plasma to sputter the target tube 3 and the target plate 9, and sputtered target atoms or target groups pass through the gap area 7 to be deposited on the surface of the substrate 4 to form a thin film until the thin film reaches the target film thickness.
Based on the linear design of the sputtering sources of the first embodiment, the second embodiment and the third embodiment, the electrode plate mechanism 1 and the substrate 4 can be laterally arranged, so that damage of plasma to components such as a film layer on the surface of the substrate 4, a thin film transistor, a light emitting diode and an organic electroluminescent display can be effectively prevented due to the fact that the electrode plate mechanism 1 is just opposite to the substrate 4, the quality of products is indirectly improved, the reject ratio of the products is reduced, meanwhile, due to the linear design of the sputtering sources in the sputtering coating device, the substrate 4 can move along the gap area 7, and a plurality of linear source sputtering sources can be arranged in series in the moving direction of the substrate 4, so that continuous in-line coating of various film layers is realized, gas can be promoted to diffuse outwards through the moving cathode target body, the coating rate and the utilization rate of the target can be improved, and the production requirement of continuous large-area deposited films of various materials can be conveniently realized, meanwhile, the method is beneficial to batch industrial production.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (13)
1. The utility model provides a sputter coating device, includes the sputter source, and the sputter source includes electrode plate mechanism (1), cathode bar (2) and target pipe (3), its characterized in that: the cathode rod structure is characterized in that the target tube (3) is wrapped outside the cathode rod (2) to form a rod-shaped cathode target body, the number of the electrode plate mechanisms (1) is two, the electrode plate mechanisms (1) are oppositely arranged, a slit (6) is formed between the electrode plate mechanisms (1), the cathode target body and the pore structure (5) are uniformly distributed in the slit (6), and the pore structure (5) is uniformly distributed between the cathode target bodies.
2. The sputter coating apparatus according to claim 1, characterized in that: the air hole structure (5) is a tubular mechanism.
3. The sputter coating apparatus according to claim 1, characterized in that: the air hole structure (5) is an air hole penetrating through the electrode plate mechanism (1).
4. The sputter coating apparatus according to claim 1, characterized in that: the cross section of the cathode target body is elliptical or circular.
5. The sputter coating apparatus according to any one of claims 2 to 4, characterized in that: the electrode plate mechanism (1) is a counter electrode plate.
6. The sputter coating apparatus according to claim 3, characterized in that: the electrode plate mechanism (1) comprises a negative counter plate, one side of the negative counter plate, which is far away from the slit (6), is provided with a magnet plate (8), and the other side of the negative counter plate, which is close to the slit (6), is provided with a target material plate (9).
7. The sputter coating apparatus according to claim 6, characterized in that: the electrode plate mechanism (1) further comprises a counter electrode which can be arranged at any position, including and not limited to the outer side of the substrate (4).
8. The sputter coating apparatus according to claim 7, wherein: the magnet plate (8) is divided into blocks or is integral.
9. The sputter coating apparatus according to claim 7 or 8, characterized in that: the distance between the magnet plate (8) and the target plate (9) is adjustable, and the magnet plate (8) can set speed and action in the coating process.
10. The sputter coating apparatus according to any one of claims 1, 2, 3, 4, 6, 7 or 8, characterized in that: the cathode target body can rotate along the axis line of the cathode target body or swing left and right in the slit (6).
11. A film forming method of a sputtering film coating apparatus, characterized in that: the film forming process includes the following steps:
s1: -placing two substrates (4) on either side of a sputter source according to any of claims 1 to 10, with a gap region (7) formed between the substrates (4) and the sputter source;
s2: the inert gas and the reaction gas are uniformly conveyed to the slit (6) through the air hole structure (5);
s3: the device is started, the power supply of the electrode plate mechanism (1) and the cathode bar (2) is switched on, and the substrate (4) reciprocates or moves in a single direction along the clearance area (7) at two sides of the sputtering source at a fixed speed;
s4: the electrified electrode plate mechanism (1) and the cathode bar (2) apply an electric field on the slit (6), the applied electric field enables the atmosphere formed by the inert gas and the reaction gas to form plasma to sputter the target tube (3), sputtered target atoms or target groups pass through the gap area (7) to be deposited on the surface of the substrate (4), and a thin film is formed until the thin film reaches the target film thickness.
12. The film forming method of a sputter coating apparatus according to claim 11, characterized in that: the inert gas in the step S2 includes argon, and the reaction gas includes oxygen.
13. The film forming method of a sputter coating apparatus according to claim 11, characterized in that: the power supply is an independently controlled direct current power supply or a radio frequency power supply, and the electrode plate mechanism (1) and the cathode bar (2) can be divided into a plurality of sub-electrodes to be independently controlled.
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| CN202110697536.3A CN113481478A (en) | 2021-06-23 | 2021-06-23 | Sputtering coating device and film forming method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114032520A (en) * | 2021-11-16 | 2022-02-11 | 哈尔滨工业大学（深圳） | Ion action multifunctional evaporation sputtering source |
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| CN114032520B (en) * | 2021-11-16 | 2023-11-28 | 哈尔滨工业大学（深圳） | Ion-acting multifunctional evaporation sputtering source |
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